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TLE98322QVXUMA1 TLE98322QVXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE98322QVXUMA1 TLE98322QVXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE98322QVXUMA2 TLE98322QVXUMA2 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE98322QVXUMA3 TLE98322QVXUMA3 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE9832-2QX TLE9832-2QX Infineon Technologies TLE9832-2.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE98322QXXUMA1 TLE98322QXXUMA1 Infineon Technologies TLE9832-2.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE9832QV TLE9832QV Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE9832QVXUMA1 TLE9832QVXUMA1 Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
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TLE9832QVXUMA2 TLE9832QVXUMA2 Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9832QXXUMA1 TLE9832QXXUMA1 Infineon Technologies TLE9832.pdf Description: IC MOTOR DRIVER 48VQFN
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PEB3065NV3.2-SLICOFI PEB3065NV3.2-SLICOFI Infineon Technologies INFNS03728-1.pdf?t.download=true&u=5oefqw Description: SLICOFI SIGNAL PROCESSING SLIC
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PEB3065NV3.2SLICOFI PEB3065NV3.2SLICOFI Infineon Technologies INFNS03728-1.pdf?t.download=true&u=5oefqw Description: SLICOFI SIGNAL PROCESSING SLIC
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CY8C20666-24LTXI CY8C20666-24LTXI Infineon Technologies download Description: IC CAPSENSE AP 32K 2048B 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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85+6.25 EUR
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IRG7PH46UEP IRG7PH46UEP Infineon Technologies IRSDS13156-1.pdf?t.download=true&u=5oefqw Description: IGBT, 108A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
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FD900R12IP4DVBOSA1 FD900R12IP4DVBOSA1 Infineon Technologies Infineon-FD900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f51636a102b7 Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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IPP055N08NF2SAKMA1 IPP055N08NF2SAKMA1 Infineon Technologies Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
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SN7002WH6433 SN7002WH6433 Infineon Technologies SN7002N.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Part Status: Active
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TDA6170X TDA6170X Infineon Technologies tda6170x.pdf?t.download=true&u=5oefqw Description: IC SOUND RECEIVERS P-DSO28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Sound Receivers
Supplier Device Package: P-DSO-28
Part Status: Active
DigiKey Programmable: Not Verified
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TDA 6190T GEG TDA 6190T GEG Infineon Technologies fundamentals-of-power-semiconductors Description: IC MIXER/AMP DVB-IF PDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-16
DigiKey Programmable: Not Verified
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TDA 6192V TDA 6192V Infineon Technologies TDA6192%20V2.1.pdf Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 30MHz ~ 65MHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-20
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IPI90N04S402BSAKSA1 Infineon Technologies Description: MOSFET N-CH 40V TO263
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CY62148G-45SXI CY62148G-45SXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 656 Stücke:
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6+3.17 EUR
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CY62148G-45SXI CY62148G-45SXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI CY62148G-45ZSXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
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57+8.76 EUR
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CY62148GN-45ZSXI CY62148GN-45ZSXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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AUIRFN8478TR Infineon Technologies auirfn8458.pdf Description: AUIRFN8478 - 20V-40V N-CHANNEL A
Packaging: Bulk
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BTS149NK BTS149NK Infineon Technologies INFNS01545-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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BTS149E3045ANTMA1 BTS149E3045ANTMA1 Infineon Technologies INFNS01545-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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IAUS300N08S5N012TATMA1 IAUS300N08S5N012TATMA1 Infineon Technologies Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4151 Stücke:
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2+10.52 EUR
10+7.11 EUR
100+5.83 EUR
Mindestbestellmenge: 2
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IPDD60R105CFD7XTMA1 IPDD60R105CFD7XTMA1 Infineon Technologies Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
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IPDD60R105CFD7XTMA1 IPDD60R105CFD7XTMA1 Infineon Technologies Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
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BSC0906NS BSC0906NS Infineon Technologies INFNS27900-1.pdf?t.download=true&u=5oefqw Description: BSC0906 - 12V-300V N-CHANNEL POW
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BSC0906NSE8189ATMA1 Infineon Technologies Description: MOSFET N-CH 30V TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ009NE2LS5ATMA1 BSZ009NE2LS5ATMA1 Infineon Technologies Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
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5000+1.75 EUR
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BSC004NE2LS5ATMA1 BSC004NE2LS5ATMA1 Infineon Technologies Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
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BSC004NE2LS5ATMA1 BSC004NE2LS5ATMA1 Infineon Technologies Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
auf Bestellung 3285 Stücke:
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5+4.14 EUR
10+2.85 EUR
100+1.96 EUR
500+1.58 EUR
1000+1.42 EUR
2000+1.35 EUR
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EVALPASCO2MINIBOARDTOBO1 EVALPASCO2MINIBOARDTOBO1 Infineon Technologies Infineon-PASCO2V01-DataSheet-v01_03-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2 Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
auf Bestellung 85 Stücke:
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1+42.36 EUR
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EVALPASCO2SENSOR2GOTOBO1 EVALPASCO2SENSOR2GOTOBO1 Infineon Technologies EVALPASCO2SENSOR2GOTOBO1.pdf Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s), Cable(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 12 Stücke:
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IR35201MTRPBF IR35201MTRPBF Infineon Technologies pb-ir35201.pdf Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IR35201MTRPBF IR35201MTRPBF Infineon Technologies pb-ir35201.pdf Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.84 EUR
10+9.79 EUR
25+9.34 EUR
100+8.11 EUR
250+7.74 EUR
500+7.06 EUR
1000+6.15 EUR
Mindestbestellmenge: 2
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IPP330P10NMAKSA1 IPP330P10NMAKSA1 Infineon Technologies Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.5 EUR
50+3.79 EUR
100+3.56 EUR
Mindestbestellmenge: 3
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BCR192WH6327XTSA1 BCR192WH6327XTSA1 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
5392+0.09 EUR
Mindestbestellmenge: 5392
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BCR192WH6327 BCR192WH6327 Infineon Technologies INFNS17191-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 192 E6327 BCR 192 E6327 Infineon Technologies INFNS11617-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
8013+0.066 EUR
Mindestbestellmenge: 8013
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BCR192E6785HTSA1 BCR192E6785HTSA1 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 93855 Stücke:
Lieferzeit 10-14 Tag (e)
10764+0.045 EUR
Mindestbestellmenge: 10764
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BCR192E6327 BCR192E6327 Infineon Technologies INFNS11617-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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BCR 192F E6327 BCR 192F E6327 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 192L3 E6327 BCR 192L3 E6327 Infineon Technologies BCR192%20%282003%29.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 192T E6327 BCR 192T E6327 Infineon Technologies BCR192%20%282003%29.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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IRDC3883 IRDC3883 Infineon Technologies Infineon-UG-IRDC3883-UM-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a6a3ca216105a Description: EVAL IR3883
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 3A
Contents: Board(s)
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3883
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+75.42 EUR
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IPD079N06L3GATMA1 IPD079N06L3GATMA1 Infineon Technologies Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.64 EUR
5000+0.6 EUR
Mindestbestellmenge: 2500
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IPA60R600CPXKSA1 IPA60R600CPXKSA1 Infineon Technologies Infineon-IPA60R600CP-DS-v02_00-en.pdf?fileId=db3a3043183a95550118792d4e540458 Description: IPA60R600 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
451+1.09 EUR
Mindestbestellmenge: 451
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BAV99UE6327 Infineon Technologies Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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DD340N22STIMHPSA1 DD340N22STIMHPSA1 Infineon Technologies Infineon-DD340N22S-DataSheet-v03_08-EN.pdf?fileId=5546d4625cc9456a015d06e5e1597efa Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+167.38 EUR
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DD340N18SHPSA1 DD340N18SHPSA1 Infineon Technologies DD340N18S.pdf Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Produkt ist nicht verfügbar
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BTS50015-1TMA BTS50015-1TMA Infineon Technologies INFN-S-A0000308628-1.pdf?t.download=true&u=5oefqw Description: BTS50015 - PROFET - SMART HIGH S
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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BTS500151TADATMA1 BTS500151TADATMA1 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
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BTS500151TADATMA1 BTS500151TADATMA1 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL064N90FAI030 S29GL064N90FAI030 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FB50R07W2E3B23BOMA1 FB50R07W2E3B23BOMA1 Infineon Technologies FB50R07W2E3_B23_v1.01_9-16-22.pdf Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+79.55 EUR
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TLE98322QVXUMA1 Part_Number_Guide_Web.pdf
TLE98322QVXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
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TLE98322QVXUMA1 Part_Number_Guide_Web.pdf
TLE98322QVXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
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TLE98322QVXUMA2 Part_Number_Guide_Web.pdf
TLE98322QVXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
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TLE98322QVXUMA3 Part_Number_Guide_Web.pdf
TLE98322QVXUMA3
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
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TLE9832-2QX TLE9832-2.pdf
TLE9832-2QX
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
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TLE98322QXXUMA1 TLE9832-2.pdf
TLE98322QXXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
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TLE9832QV TLE9832.pdf
TLE9832QV
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
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TLE9832QVXUMA1 TLE9832.pdf
TLE9832QVXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
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TLE9832QVXUMA2 TLE9832.pdf
TLE9832QVXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 11
DigiKey Programmable: Not Verified
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TLE9832QXXUMA1 TLE9832.pdf
TLE9832QXXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
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PEB3065NV3.2-SLICOFI INFNS03728-1.pdf?t.download=true&u=5oefqw
PEB3065NV3.2-SLICOFI
Hersteller: Infineon Technologies
Description: SLICOFI SIGNAL PROCESSING SLIC
auf Bestellung 11945 Stücke:
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PEB3065NV3.2SLICOFI INFNS03728-1.pdf?t.download=true&u=5oefqw
PEB3065NV3.2SLICOFI
Hersteller: Infineon Technologies
Description: SLICOFI SIGNAL PROCESSING SLIC
auf Bestellung 2000 Stücke:
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CY8C20666-24LTXI download
CY8C20666-24LTXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE AP 32K 2048B 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
85+6.25 EUR
Mindestbestellmenge: 85
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IRG7PH46UEP IRSDS13156-1.pdf?t.download=true&u=5oefqw
IRG7PH46UEP
Hersteller: Infineon Technologies
Description: IGBT, 108A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FD900R12IP4DVBOSA1 Infineon-FD900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f51636a102b7
FD900R12IP4DVBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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IPP055N08NF2SAKMA1 Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6
IPP055N08NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SN7002WH6433 SN7002N.pdf?t.download=true&u=5oefqw
SN7002WH6433
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TDA6170X tda6170x.pdf?t.download=true&u=5oefqw
TDA6170X
Hersteller: Infineon Technologies
Description: IC SOUND RECEIVERS P-DSO28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Sound Receivers
Supplier Device Package: P-DSO-28
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA 6190T GEG fundamentals-of-power-semiconductors
TDA 6190T GEG
Hersteller: Infineon Technologies
Description: IC MIXER/AMP DVB-IF PDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDA 6192V TDA6192%20V2.1.pdf
TDA 6192V
Hersteller: Infineon Technologies
Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 30MHz ~ 65MHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI90N04S402BSAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62148G-45SXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CY62148G-45SXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62148G-45ZSXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
57+8.76 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
CY62148GN-45ZSXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN-45ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN8478TR auirfn8458.pdf
Hersteller: Infineon Technologies
Description: AUIRFN8478 - 20V-40V N-CHANNEL A
Packaging: Bulk
Produkt ist nicht verfügbar
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BTS149NK INFNS01545-1.pdf?t.download=true&u=5oefqw
BTS149NK
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Produkt ist nicht verfügbar
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BTS149E3045ANTMA1 INFNS01545-1.pdf?t.download=true&u=5oefqw
BTS149E3045ANTMA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Produkt ist nicht verfügbar
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IAUS300N08S5N012TATMA1 Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb
IAUS300N08S5N012TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.52 EUR
10+7.11 EUR
100+5.83 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R105CFD7XTMA1 Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e
IPDD60R105CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R105CFD7XTMA1 Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e
IPDD60R105CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Produkt ist nicht verfügbar
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BSC0906NS INFNS27900-1.pdf?t.download=true&u=5oefqw
BSC0906NS
Hersteller: Infineon Technologies
Description: BSC0906 - 12V-300V N-CHANNEL POW
Produkt ist nicht verfügbar
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BSC0906NSE8189ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ009NE2LS5ATMA1 Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
BSZ009NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.75 EUR
Mindestbestellmenge: 5000
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BSC004NE2LS5ATMA1 Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e
BSC004NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC004NE2LS5ATMA1 Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e
BSC004NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
auf Bestellung 3285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+2.85 EUR
100+1.96 EUR
500+1.58 EUR
1000+1.42 EUR
2000+1.35 EUR
Mindestbestellmenge: 5
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EVALPASCO2MINIBOARDTOBO1 Infineon-PASCO2V01-DataSheet-v01_03-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2
EVALPASCO2MINIBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Contents: Board(s)
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.36 EUR
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EVALPASCO2SENSOR2GOTOBO1 EVALPASCO2SENSOR2GOTOBO1.pdf
EVALPASCO2SENSOR2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s), Cable(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+126.05 EUR
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IR35201MTRPBF pb-ir35201.pdf
IR35201MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IR35201MTRPBF pb-ir35201.pdf
IR35201MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.84 EUR
10+9.79 EUR
25+9.34 EUR
100+8.11 EUR
250+7.74 EUR
500+7.06 EUR
1000+6.15 EUR
Mindestbestellmenge: 2
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IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
IPP330P10NMAKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.5 EUR
50+3.79 EUR
100+3.56 EUR
Mindestbestellmenge: 3
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BCR192WH6327XTSA1 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR192WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5392+0.09 EUR
Mindestbestellmenge: 5392
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BCR192WH6327 INFNS17191-1.pdf?t.download=true&u=5oefqw
BCR192WH6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 192 E6327 INFNS11617-1.pdf?t.download=true&u=5oefqw
BCR 192 E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8013+0.066 EUR
Mindestbestellmenge: 8013
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BCR192E6785HTSA1 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR192E6785HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 93855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10764+0.045 EUR
Mindestbestellmenge: 10764
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BCR192E6327 INFNS11617-1.pdf?t.download=true&u=5oefqw
BCR192E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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BCR 192F E6327 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR 192F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 192L3 E6327 BCR192%20%282003%29.pdf
BCR 192L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 192T E6327 BCR192%20%282003%29.pdf
BCR 192T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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IRDC3883 Infineon-UG-IRDC3883-UM-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a6a3ca216105a
IRDC3883
Hersteller: Infineon Technologies
Description: EVAL IR3883
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 3A
Contents: Board(s)
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3883
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.42 EUR
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IPD079N06L3GATMA1 Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0
IPD079N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
5000+0.6 EUR
Mindestbestellmenge: 2500
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IPA60R600CPXKSA1 Infineon-IPA60R600CP-DS-v02_00-en.pdf?fileId=db3a3043183a95550118792d4e540458
IPA60R600CPXKSA1
Hersteller: Infineon Technologies
Description: IPA60R600 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
451+1.09 EUR
Mindestbestellmenge: 451
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BAV99UE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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DD340N22STIMHPSA1 Infineon-DD340N22S-DataSheet-v03_08-EN.pdf?fileId=5546d4625cc9456a015d06e5e1597efa
DD340N22STIMHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+167.38 EUR
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DD340N18SHPSA1 DD340N18S.pdf
DD340N18SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Produkt ist nicht verfügbar
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BTS50015-1TMA INFN-S-A0000308628-1.pdf?t.download=true&u=5oefqw
BTS50015-1TMA
Hersteller: Infineon Technologies
Description: BTS50015 - PROFET - SMART HIGH S
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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BTS500151TADATMA1 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS500151TADATMA1 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL064N90FAI030 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FAI030
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FB50R07W2E3B23BOMA1 FB50R07W2E3_B23_v1.01_9-16-22.pdf
FB50R07W2E3B23BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+79.55 EUR
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