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DR11141890NDSA1 Infineon Technologies Description: A-PCB DR111 41890
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IPB65R115CFD7AATMA1 IPB65R115CFD7AATMA1 Infineon Technologies Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
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IPB65R115CFD7AATMA1 IPB65R115CFD7AATMA1 Infineon Technologies Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
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IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
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IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
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SLE66R01PNBX1SA1 Infineon Technologies SLE%2066R01P,PN.pdf Description: IC SECURITY CHIP CARD CTLR
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SLE66R35RCZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR DIE
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SLE66R04PNBZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR
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CHL8325A-16CRT Infineon Technologies IR3541_CHL8325A_B_v1.09_6-21-13.pdf Description: IC REG BUCK 40VQFN
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FZ2400R33HE4BPSA1 FZ2400R33HE4BPSA1 Infineon Technologies Infineon-FZ2400R33HE4-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d58b60587 Description: IGBT MOD 3300V 2400A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 5400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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FZ1400R33HE4BPSA1 FZ1400R33HE4BPSA1 Infineon Technologies Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
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FF600R07ME4BPSA1 FF600R07ME4BPSA1 Infineon Technologies Infineon-FF600R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e34c4b11090 Description: GBT MODULE 650V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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FF300R07ME4BOSA1 FF300R07ME4BOSA1 Infineon Technologies Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b Description: IGBT MOD 650V 300A AG-ECONOD-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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S2GOSECURITYOPTIGAETOBO1 S2GOSECURITYOPTIGAETOBO1 Infineon Technologies Infineon-OPTIGA_Trust_E_SLS32AIA-PB-v09_17-EN.pdf?fileId=5546d4624e765da5014eaabac63f5a38 Description: EVAL TRUST X SECURITY CHIP
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
Platform: Shield2Go
Part Status: Active
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S25FL256LAGBHI030 S25FL256LAGBHI030 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CY8C20237-24LKXI CY8C20237-24LKXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
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BAT 54W E6327 BAT 54W E6327 Infineon Technologies BAT54_Series.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
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DDB2U40N12W1RFB11BPSA1 DDB2U40N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
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OPTIGATRUSTMEVALKITTOBO1 OPTIGATRUSTMEVALKITTOBO1 Infineon Technologies Infineon-OPTIGA_Trust_M-GettingStarted-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c2ffd7e4d Description: OPTIGA TRUST M EVAL KIT
Packaging: Box
Function: Battery Authentication
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
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FF6MR12W2M1B70BPSA1 Infineon Technologies Infineon-FF6MR12W2M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017839e7ffac498c Description: MOSFET 2N-CH 1200V AG-EASY2B
Part Status: Obsolete
Supplier Device Package: AG-EASY2B
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FF300R08W2P2B11ABOMA1 FF300R08W2P2B11ABOMA1 Infineon Technologies Infineon-FF300R08W2P2_B11A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b05f2df5f54a4 Description: IGBT MOD 750V 200A AG-EASY2B-3
Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Supplier Device Package: AG-EASY2B-3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IFX1117GSV IFX1117GSV Infineon Technologies IFX1117.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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770+0.79 EUR
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TLE4274DV33ATMA1 TLE4274DV33ATMA1 Infineon Technologies TLE4274_rev2.3_2008-03-10.pdf Description: IC REG LIN 3.3V 400MA TO252-3-11
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TO252-3-11
Number of Regulators: 1
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XMC7531SCQ040XAAXUMA1 XMC7531SCQ040XAAXUMA1 Infineon Technologies Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40
DigiKey Programmable: Not Verified
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TLS41255VBOARDTOBO1 TLS41255VBOARDTOBO1 Infineon Technologies Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd Description: TLS4125 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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TLS41205VBOARDTOBO1 TLS41205VBOARDTOBO1 Infineon Technologies Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd Description: EVAL BOARD FOR TLS4120D0EPV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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IPI45N06S4L08AKSA2 IPI45N06S4L08AKSA2 Infineon Technologies INFNS14118-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
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IPI45N06S4-09AKSA2 IPI45N06S4-09AKSA2 Infineon Technologies INFNS14117-1.pdf?t.download=true&u=5oefqw Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IPB45N06S409ATMA2 IPB45N06S409ATMA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO263-3
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BGA751L7E6327 Infineon Technologies INFNS13614-1.pdf?t.download=true&u=5oefqw Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7
Supplier Device Package: PG-TSLP-7-1
Test Frequency: 470MHz
P1dB: -10dBm
Noise Figure: 1.3dB
Current - Supply: 5.85mA
Gain: 15.75dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: General Purpose
Frequency: 170MHz ~ 1.675GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
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545+1.01 EUR
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BGSA11GN10E6327XTSA1 BGSA11GN10E6327XTSA1 Infineon Technologies Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
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EVAL-M1-301FTOBO1 EVAL-M1-301FTOBO1 Infineon Technologies Infineon-User_Guide_EVAL-M1-301F-UserManual-v01_01-EN.pdf?fileId=5546d462737c45b9017395b009fe70d2 Description: EVAL BOARD FOR IMC301A-F064
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC301A-F064
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: 3.3V, 5V Supply
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
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ESD133B1W01005E6327XTSA1 ESD133B1W01005E6327XTSA1 Infineon Technologies Infineon-New%20generation%20ESD%20protection%20diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 5.5VWM 13VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, HDMI, Telecom, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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S25FL256SDSBHI210 S25FL256SDSBHI210 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
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MB95F714MNPMC-G-SNE2 MB95F714MNPMC-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 80LQFP
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IST026N10NM5AUMA1 IST026N10NM5AUMA1 Infineon Technologies Infineon-IST026N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa9204a17ecd Description: TRENCH >=100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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IST026N10NM5AUMA1 IST026N10NM5AUMA1 Infineon Technologies Infineon-IST026N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa9204a17ecd Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
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ISC0802NLSATMA1 ISC0802NLSATMA1 Infineon Technologies Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
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ISC0802NLSATMA1 ISC0802NLSATMA1 Infineon Technologies Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
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BTS3028SDL BTS3028SDL Infineon Technologies INFNS13737-1.pdf?t.download=true&u=5oefqw Description: BTS3028 - HITFET, AUTOMOTIVE SMA
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TLS412033VCOREBOARDTOBO1 TLS412033VCOREBOARDTOBO1 Infineon Technologies Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f Description: TLS4120 3.3V CORE-BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 6V ~ 35V
Current - Output: 2A
Frequency - Switching: 2.2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS412033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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IPP082N10NF2SAKMA1 IPP082N10NF2SAKMA1 Infineon Technologies Infineon-IPP082N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa67027a000b Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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IFX25001MEV33 IFX25001MEV33 Infineon Technologies Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9 Description: IC REG LIN 3.3V 400MA SOT223-4
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IPI126N10N3G IPI126N10N3G Infineon Technologies INFN-S-A0001299281-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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TLE7241EXUMA2 TLE7241EXUMA2 Infineon Technologies TLE7241E.pdf Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-27
Ratio - Input:Output: 1:2
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Voltage - Load: 9V ~ 18V
Rds On (Typ): 240mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: SPI
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
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D251K12BXPSA1 D251K12BXPSA1 Infineon Technologies D251K.pdf Description: DIODE GEN PURP 1.2KV 255A
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TD780N18KOFHPSA1 TD780N18KOFHPSA1 Infineon Technologies Infineon-TT780N18KOF-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc74390178273cf739761b Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
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MB90F349ESPMC-GS-N2E1 MB90F349ESPMC-GS-N2E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CHL8225G-00CRT CHL8225G-00CRT Infineon Technologies pb-chl8225g.pdf?fileId=5546d462533600a40153567f756728b5 Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
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CHL8225G-07CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
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CHL8225G-05CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
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CHL8225G-02CRT CHL8225G-02CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
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CHL8225G-06CRT Infineon Technologies CHL8225G_8G_V1.12_6-21-13.pdf Description: IC REG CTRLR GPU 2OUT 40QFN
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BA595E6359HTMA1 BA595E6359HTMA1 Infineon Technologies Description: RF DIODE PIN 50V SC79-2
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BA595E6359HTMA1 BA595E6359HTMA1 Infineon Technologies Description: RF DIODE PIN 50V SC79-2
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BA885E7631HTMA1 Infineon Technologies Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
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IPC313N10N3RX1SA2 Infineon Technologies Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Description: TRENCH >=100V
Packaging: Bulk
Part Status: Active
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SAK-XC2797X-200F100LAB SAK-XC2797X-200F100LAB Infineon Technologies INFNS15652-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 150
Part Status: Active
Supplier Device Package: PG-LQFP-176-12
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 30x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 138K x 8
Program Memory Size: 1.6MB (1.6M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Bulk
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SAKXC2297H136F80LABKXUMA2 Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
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IAUS240N08S5N019ATMA1 IAUS240N08S5N019ATMA1 Infineon Technologies IAUS240N08S5N019.pdf Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
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DR11141890NDSA1
Hersteller: Infineon Technologies
Description: A-PCB DR111 41890
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IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
IPB65R115CFD7AATMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
IPB65R115CFD7AATMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
Mindestbestellmenge: 3 Stücke
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IPL65R115CFD7AUMA1 Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7
IPL65R115CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Produkt ist nicht verfügbar
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IPL65R115CFD7AUMA1 Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7
IPL65R115CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
auf Bestellung 2536 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.08 EUR
10+6.71 EUR
100+4.81 EUR
500+4.69 EUR
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SLE66R01PNBX1SA1 SLE%2066R01P,PN.pdf
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
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SLE66R35RCZZZA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR DIE
Produkt ist nicht verfügbar
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SLE66R04PNBZZZA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
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CHL8325A-16CRT IR3541_CHL8325A_B_v1.09_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
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FZ2400R33HE4BPSA1 Infineon-FZ2400R33HE4-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d58b60587
FZ2400R33HE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 2400A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 5400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
FZ1400R33HE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R07ME4BPSA1 Infineon-FF600R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e34c4b11090
FF600R07ME4BPSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 650V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 4 Stücke:
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1+331.77 EUR
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FF300R07ME4BOSA1 Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b
FF300R07ME4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 300A AG-ECONOD-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 9 Stücke:
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1+226.72 EUR
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S2GOSECURITYOPTIGAETOBO1 Infineon-OPTIGA_Trust_E_SLS32AIA-PB-v09_17-EN.pdf?fileId=5546d4624e765da5014eaabac63f5a38
S2GOSECURITYOPTIGAETOBO1
Hersteller: Infineon Technologies
Description: EVAL TRUST X SECURITY CHIP
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
Platform: Shield2Go
Part Status: Active
Produkt ist nicht verfügbar
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S25FL256LAGBHI030 INFN-S-A0017271261-1.pdf
S25FL256LAGBHI030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
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CY8C20237-24LKXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20237-24LKXI
Hersteller: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
auf Bestellung 6 Stücke:
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BAT 54W E6327 BAT54_Series.pdf
BAT 54W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA SOT323
Produkt ist nicht verfügbar
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DDB2U40N12W1RFB11BPSA1 Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c
DDB2U40N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 40A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
auf Bestellung 5 Stücke:
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AnzahlPrivatkunde
1+161.88 EUR
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OPTIGATRUSTMEVALKITTOBO1 Infineon-OPTIGA_Trust_M-GettingStarted-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c2ffd7e4d
OPTIGATRUSTMEVALKITTOBO1
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M EVAL KIT
Packaging: Box
Function: Battery Authentication
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+251.33 EUR
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FF6MR12W2M1B70BPSA1 Infineon-FF6MR12W2M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017839e7ffac498c
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY2B
Part Status: Obsolete
Supplier Device Package: AG-EASY2B
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FF300R08W2P2B11ABOMA1 Infineon-FF300R08W2P2_B11A-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b05f2df5f54a4
FF300R08W2P2B11ABOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 200A AG-EASY2B-3
Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Supplier Device Package: AG-EASY2B-3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+143.22 EUR
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IFX1117GSV IFX1117.pdf
IFX1117GSV
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
770+0.79 EUR
Mindestbestellmenge: 770 Stücke
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TLE4274DV33ATMA1 TLE4274_rev2.3_2008-03-10.pdf
TLE4274DV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
PSRR: 60dB (100Hz)
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TO252-3-11
Number of Regulators: 1
Produkt ist nicht verfügbar
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XMC7531SCQ040XAAXUMA1 Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a
XMC7531SCQ040XAAXUMA1
Hersteller: Infineon Technologies
Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLS41255VBOARDTOBO1 Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd
TLS41255VBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4125 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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TLS41205VBOARDTOBO1 Infineon-Z8F68163134-TLS412xD0EPVxx-Demoboard-UserManual-v01_11-EN.pdf?fileId=5546d462727878c201727e33b7a55afd
TLS41205VBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV50
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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IPI45N06S4L08AKSA2 INFNS14118-1.pdf?t.download=true&u=5oefqw
IPI45N06S4L08AKSA2
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
742+0.77 EUR
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IPI45N06S4-09AKSA2 INFNS14117-1.pdf?t.download=true&u=5oefqw
IPI45N06S4-09AKSA2
Hersteller: Infineon Technologies
Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
359+1.67 EUR
Mindestbestellmenge: 359 Stücke
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IPB45N06S409ATMA2 IPx45N06S4-09.pdf
IPB45N06S409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Produkt ist nicht verfügbar
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BGA751L7E6327 INFNS13614-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7
Supplier Device Package: PG-TSLP-7-1
Test Frequency: 470MHz
P1dB: -10dBm
Noise Figure: 1.3dB
Current - Supply: 5.85mA
Gain: 15.75dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: General Purpose
Frequency: 170MHz ~ 1.675GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
auf Bestellung 30441 Stücke:
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AnzahlPrivatkunde
545+1.01 EUR
Mindestbestellmenge: 545 Stücke
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BGSA11GN10E6327XTSA1 Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed
BGSA11GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
Produkt ist nicht verfügbar
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EVAL-M1-301FTOBO1 Infineon-User_Guide_EVAL-M1-301F-UserManual-v01_01-EN.pdf?fileId=5546d462737c45b9017395b009fe70d2
EVAL-M1-301FTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC301A-F064
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC301A-F064
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: 3.3V, 5V Supply
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+132.47 EUR
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ESD133B1W01005E6327XTSA1 Infineon-New%20generation%20ESD%20protection%20diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD133B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, HDMI, Telecom, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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AnzahlPrivatkunde
53+0.39 EUR
88+0.24 EUR
142+0.14 EUR
500+0.11 EUR
1000+0.095 EUR
2000+0.084 EUR
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S25FL256SDSBHI210 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SDSBHI210
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
auf Bestellung 10 Stücke:
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AnzahlPrivatkunde
9+2.43 EUR
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MB95F714MNPMC-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F714MNPMC-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 80LQFP
Produkt ist nicht verfügbar
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IST026N10NM5AUMA1 Infineon-IST026N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa9204a17ecd
IST026N10NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Produkt ist nicht verfügbar
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IST026N10NM5AUMA1 Infineon-IST026N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa9204a17ecd
IST026N10NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 1663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.9 EUR
10+6.59 EUR
100+4.7 EUR
500+3.89 EUR
1000+3.77 EUR
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ISC0802NLSATMA1 Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c
ISC0802NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.59 EUR
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ISC0802NLSATMA1 Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c
ISC0802NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
auf Bestellung 12284 Stücke:
Lieferzeit 10-14 Tag (e)
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4+5.34 EUR
10+3.45 EUR
50+2.63 EUR
100+2.37 EUR
500+1.92 EUR
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BTS3028SDL INFNS13737-1.pdf?t.download=true&u=5oefqw
BTS3028SDL
Hersteller: Infineon Technologies
Description: BTS3028 - HITFET, AUTOMOTIVE SMA
Produkt ist nicht verfügbar
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TLS412033VCOREBOARDTOBO1 Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f
TLS412033VCOREBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4120 3.3V CORE-BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 6V ~ 35V
Current - Output: 2A
Frequency - Switching: 2.2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS412033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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1+66.28 EUR
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IPP082N10NF2SAKMA1 Infineon-IPP082N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa67027a000b
IPP082N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1978 Stücke:
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AnzahlPrivatkunde
5+4.76 EUR
10+3.06 EUR
50+2.32 EUR
100+2.09 EUR
500+1.68 EUR
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IFX25001MEV33 Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9
IFX25001MEV33
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA SOT223-4
Produkt ist nicht verfügbar
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IPI126N10N3G INFN-S-A0001299281-1.pdf?t.download=true&u=5oefqw
IPI126N10N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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TLE7241EXUMA2 TLE7241E.pdf
TLE7241EXUMA2
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-27
Ratio - Input:Output: 1:2
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Voltage - Load: 9V ~ 18V
Rds On (Typ): 240mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: SPI
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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D251K12BXPSA1 D251K.pdf
D251K12BXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 255A
Produkt ist nicht verfügbar
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TD780N18KOFHPSA1 Infineon-TT780N18KOF-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc74390178273cf739761b
TD780N18KOFHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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MB90F349ESPMC-GS-N2E1
MB90F349ESPMC-GS-N2E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CHL8225G-00CRT pb-chl8225g.pdf?fileId=5546d462533600a40153567f756728b5
CHL8225G-00CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Produkt ist nicht verfügbar
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CHL8225G-07CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
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CHL8225G-05CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
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CHL8225G-02CRT CHL8225G_8G_V1.12_6-21-13.pdf
CHL8225G-02CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Produkt ist nicht verfügbar
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CHL8225G-06CRT CHL8225G_8G_V1.12_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
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BA595E6359HTMA1
BA595E6359HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
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BA595E6359HTMA1
BA595E6359HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
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BA885E7631HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Bulk
Part Status: Active
auf Bestellung 76076 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
74+7.49 EUR
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SAK-XC2797X-200F100LAB INFNS15652-1.pdf?t.download=true&u=5oefqw
SAK-XC2797X-200F100LAB
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 150
Part Status: Active
Supplier Device Package: PG-LQFP-176-12
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 30x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 138K x 8
Program Memory Size: 1.6MB (1.6M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAKXC2297H136F80LABKXUMA2
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUS240N08S5N019ATMA1 IAUS240N08S5N019.pdf
IAUS240N08S5N019ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.23 EUR
10+6.13 EUR
100+4.36 EUR
500+3.83 EUR
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