Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128360) > Seite 430 nach 2140
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IDDD08G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 24A PGHDSOP101Current - Reverse Leakage @ Vr: 27 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 24A Capacitance @ Vr, F: 401pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD08G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 24A PGHDSOP101Current - Average Rectified (Io): 24A Capacitance @ Vr, F: 401pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 27 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 34A PGHDSOP101Current - Reverse Leakage @ Vr: 40 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 34A Capacitance @ Vr, F: 594pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 34A PGHDSOP101Current - Reverse Leakage @ Vr: 40 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 34A Capacitance @ Vr, F: 594pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 51A PGHDSOP101Current - Average Rectified (Io): 51A Capacitance @ Vr, F: 970pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 67 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 51A PGHDSOP101Capacitance @ Vr, F: 970pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 67 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 51A |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101Current - Reverse Leakage @ Vr: 14 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 13A Capacitance @ Vr, F: 205pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 14 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 13A Capacitance @ Vr, F: 205pF @ 1V, 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S70GL02GP11FAIR23 | Infineon Technologies |
Description: IC FLASH 2GBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Obsolete Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256M x 8, 128M x 16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| P2000D45X168HPSA1 | Infineon Technologies |
Description: PRESS PACK IGBT BG-P16826K-1 Part Status: Obsolete NTC Thermistor: No Configuration: Single Input: Standard Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BCR430UXTSA2 | Infineon Technologies |
Description: IC LED DRV LIN PWM 100MA SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 42V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: PG-SOT23-6-1 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 42V Part Status: Active |
auf Bestellung 2153 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB50N10S3L16ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2.4V @ 60µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB50N10S3L16ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2.4V @ 60µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPG20N10S436AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 20A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC016N06NSSCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-WSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 234A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BGM7LLHM4L12E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12Part Status: Obsolete Supplier Device Package: TSLP-12-4 Current - Supply: 4.5mA Gain: 13dB Voltage - Supply: 1.5V ~ 3.3V RF Type: LTE Frequency: 700MHz ~ 2.7GHz Mounting Type: Surface Mount Package / Case: 12-XFQFN Exposed Pad Packaging: Bulk |
auf Bestellung 682500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB47N10S33ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 47A TO263-3 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR1010Z | Infineon Technologies |
Description: AUIRFR1010 - 55V-60V N-CHANNEL APackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D-PAK (TO-252AA) Part Status: Active Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PXE1110ADM-G001 | Infineon Technologies | Description: IC CONTROLLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SPD04P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 380µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SPD04P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4A TO252-3Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 380µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ACCESSORY33234NOSA1 | Infineon Technologies | Description: ACCESSORY IGBT MODULEE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FS20R06XL4BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 26A 89W EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: AG-EASY750-1 Part Status: Obsolete Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 89 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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SAKXC2286M104F80LAA | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILYDigiKey Programmable: Not Verified Number of I/O: 118 Supplier Device Package: PG-LQFP-144-4 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 16x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 50K x 8 Program Memory Size: 832KB (832K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SAK-XC2287M-72F80L AA | Infineon Technologies |
Description: IC MCU 16/32B 576KB FLSH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 118 Supplier Device Package: PG-LQFP-144-4 Peripherals: I2S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 24x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 50K x 8 Program Memory Size: 576KB (576K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE8082ESXUMA1 | Infineon Technologies |
Description: ENGINECONTR_SMALL_ENGINE, PG-TSDPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 6V ~ 40V Applications: Engine Management Current - Supply: 16mA (Max) Supplier Device Package: PG-TSDSO-24 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE8082ESXUMA1 | Infineon Technologies |
Description: ENGINECONTR_SMALL_ENGINE, PG-TSDPackaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 6V ~ 40V Applications: Engine Management Current - Supply: 16mA (Max) Supplier Device Package: PG-TSDSO-24 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 23989 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE8088EMXUMA1 | Infineon Technologies |
Description: ENGINECONTRPackaging: Cut Tape (CT) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 6V ~ 18V Applications: Small Engine Supplier Device Package: PG-SSOP-24 Grade: Automotive Part Status: Active |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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SAK-XC2269I136F128LRAAKXUMA1 | Infineon Technologies |
Description: 16 BIT C166 MICROXC2200 FAMILY (DigiKey Programmable: Not Verified Number of I/O: 76 Part Status: Active Supplier Device Package: PG-LQFP-100-8 Peripherals: DMA, I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 16x12b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 90K x 8 Program Memory Size: 1MB (1M x 8) Speed: 128MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Bulk |
Produkt ist nicht verfügbar |
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SAK-XC2220U-4F40VAA | Infineon Technologies |
Description: 16-BIT C166 MICROCONTROLLER - XC |
Produkt ist nicht verfügbar |
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TLE92104131QXXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 48VQFNQualification: AEC-Q100 Grade: Automotive Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Analog, Logic, PWM, SPI Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Features: Charge Pump Packaging: Tape & Reel (TR) Part Status: Active Fault Protection: Over Temperature, Short Circuit Supplier Device Package: PG-VQFN-48-29 Applications: DC Motors, General Purpose Rds On (Typ): 40Ohm Voltage - Supply: 3V ~ 5.5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE92104131QXXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 48VQFNQualification: AEC-Q100 Grade: Automotive Part Status: Active Fault Protection: Over Temperature, Short Circuit Supplier Device Package: PG-VQFN-48-29 Applications: DC Motors, General Purpose Rds On (Typ): 40Ohm Voltage - Supply: 3V ~ 5.5V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Analog, Logic, PWM, SPI Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Features: Charge Pump Packaging: Cut Tape (CT) |
auf Bestellung 1496 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9872QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 10 Part Status: Active Supplier Device Package: PG-VQFN-48-29 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (256kB) Controller Series: TLE987x Voltage - Supply: 5.5V ~ 27V Operating Temperature: -40°C ~ 150°C (TJ) RAM Size: 8K x 8 Interface: LINbus, SPI, SSC, UART/USART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9862QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 10 Supplier Device Package: PG-VQFN-48-29 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (256kB) Controller Series: TLE986x Voltage - Supply: 5.5V ~ 27V Operating Temperature: -40°C ~ 150°C (TJ) RAM Size: 8K x 8 Interface: LINbus, SPI, SSC, UART/USART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE92104232QXXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 48VQFNPart Status: Active Fault Protection: Short Circuit Supplier Device Package: PG-VQFN-48-29 Applications: DC Motors, General Purpose Rds On (Typ): 40Ohm Voltage - Supply: 3V ~ 5.5V Qualification: AEC-Q100 Grade: Automotive Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Analog, Logic, PWM, SPI Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Features: Charge Pump Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9185QXV33XUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_IC PG-VQFN-48Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 250mA Interface: PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 6V ~ 28V Technology: NMOS Voltage - Load: 3V ~ 28V Supplier Device Package: PG-VQFN-48-29 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active Grade: Automotive |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9185QXV33XUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_IC PG-VQFN-48Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 250mA Interface: PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 6V ~ 28V Technology: NMOS Voltage - Load: 3V ~ 28V Supplier Device Package: PG-VQFN-48-29 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active Grade: Automotive |
auf Bestellung 9030 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE9185QXXUMA1 | Infineon Technologies |
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFNPart Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Motor Type - Stepper: Multiphase Supplier Device Package: PG-VQFN-48-29 Technology: NMOS Applications: General Purpose Voltage - Supply: 4.5V ~ 28V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: SPI Current - Output: 250mA Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLE9185QXXUMA1 | Infineon Technologies |
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFNCurrent - Output: 250mA Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Motor Type - Stepper: Multiphase Supplier Device Package: PG-VQFN-48-29 Technology: NMOS Applications: General Purpose Voltage - Supply: 4.5V ~ 28V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: SPI |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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6EDL7141XUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNSupplier Device Package: PG-VQFN-48-78 Input Type: Non-Inverting Voltage - Supply: 5.5V ~ 60V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 1.5A, 1.5A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: N-Channel MOSFET Number of Drivers: 3 Driven Configuration: Half-Bridge Channel Type: 3-Phase |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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6EDL7141XUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 1.5A, 1.5A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: N-Channel MOSFET Number of Drivers: 3 Driven Configuration: Half-Bridge Channel Type: 3-Phase Supplier Device Package: PG-VQFN-48-78 Input Type: Non-Inverting Voltage - Supply: 5.5V ~ 60V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2830 Stücke: Lieferzeit 10-14 Tag (e) |
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BGA7P320E6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURE PG-TSNP-Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: PG-TSNP-16-12 Test Frequency: 3.3GHz ~ 4.2GHz P1dB: 27.8dBm Noise Figure: 3.5dB Gain: 34.4dB Voltage - Supply: 3.15V ~ 3.45V RF Type: 5G Frequency: 3.3GHz ~ 4.2GHz Mounting Type: Surface Mount Package / Case: 16-WFDFN Exposed Pad |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS23N20DTRRP | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAKPower Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC240N12NS3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIDC81D60E6YX1SA1 | Infineon Technologies |
Description: DIODE GEN PURPOSE 600V Packaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SIDC81D120F6YX1SA1 | Infineon Technologies |
Description: DIODE GEN PURPOSE 1.2KV Packaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DDB6U100N16RRBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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F411MR12W2M1B76BOMA1 | Infineon Technologies |
Description: MOSFET 4N-CH 1200V AG-EASY1B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Supplier Device Package: AG-EASY1B-2 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IGT40R070D1ATMA1 | Infineon Technologies |
Description: GAN HVPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
IST007N04NM6AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 54A/440A HSOF-5Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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REFICL8810LED43WBMTOBO1 | Infineon Technologies |
Description: ICL8810 REF BOARD 43W BM Features: Dimmable Packaging: Bulk Voltage - Output: 52V Voltage - Input: 90 ~ 305 VAC Utilized IC / Part: ICL8810 Supplied Contents: Board(s) Outputs and Type: 1 Isolated Output Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IPLK70R900P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8 Part Status: Active Drain to Source Voltage (Vdss): 700 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPD100N06S403ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TO252-3-11Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYW4329HKUBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGAPart Status: Obsolete Serial Interfaces: I²C, I²S, SPI, UART RF Family/Standard: Bluetooth GPIO: 14 Supplier Device Package: 182-WLBGA (6.57x5.62) Protocol: Bluetooth v2.1 Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -30°C ~ 85°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount DigiKey Programmable: Not Verified Package / Case: 182-UFBGA, WLBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CYW4329FKUBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGAPart Status: Obsolete Serial Interfaces: I²C, I²S, SPI, UART RF Family/Standard: Bluetooth GPIO: 14 Supplier Device Package: 182-WLBGA (6.57x5.62) Protocol: Bluetooth v2.1 Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -30°C ~ 85°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount Package / Case: 182-UFBGA, WLBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CYW4325GKWBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUTOOTH 339XFBGAPackaging: Tape & Reel (TR) Package / Case: 339-XFBGA, WLCSP Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 3.3V Power - Output: 7.5dBm Protocol: 802.11a/b/g, Bluetooth v3.0 Current - Receiving: 81mA Data Rate (Max): 54Mbps Current - Transmitting: 295mA Supplier Device Package: 339-WLCSP (6.51x5.81) GPIO: 15 Modulation: 8DPSK, DQPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, I2S, JTAG, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CYW4330FKUBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 133WLBGAPackaging: Tape & Reel (TR) Package / Case: 133-UFBGA, WLBGA Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 3.3V Power - Output: 12dBm Protocol: 802.11a/b/g/n, Bluetooth v4.0 Data Rate (Max): 72.2Mbps Supplier Device Package: 133-WLBGA (4.89x5.33) GPIO: 7 Modulation: 8DPSK, DQPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, SPI, UART DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CYW4330XKUBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 133WLBGAPackaging: Tape & Reel (TR) Package / Case: 133-UFBGA, WLBGA Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 3.3V Power - Output: 12dBm Protocol: 802.11a/b/g/n, Bluetooth v4.0 Data Rate (Max): 72.2Mbps Supplier Device Package: 133-WLBGA (4.89x5.33) GPIO: 7 Modulation: 8DPSK, DQPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, SPI, UART DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CYW20740A2KMLG | Infineon Technologies |
Description: IC BT BLE IEEE 802.15.4 Packaging: Bulk DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
IPTG007N06NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 53A/454A HSOG-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IDDD08G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1700+ | 2.83 EUR |
| IDDD08G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.38 EUR |
| 10+ | 5.51 EUR |
| 50+ | 4.3 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.3 EUR |
| IDDD12G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDDD12G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDDD20G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Description: DIODE SIC 650V 51A PGHDSOP101
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1700+ | 6.7 EUR |
| IDDD20G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 51A
Description: DIODE SIC 650V 51A PGHDSOP101
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 51A
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.54 EUR |
| 10+ | 11.28 EUR |
| 50+ | 9.04 EUR |
| 100+ | 8.32 EUR |
| 500+ | 8.21 EUR |
| IDDD04G65C6XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IDDD04G65C6XTMA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Description: DIODE SIC 650V 13A PGHDSOP101
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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| S70GL02GP11FAIR23 |
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Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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| P2000D45X168HPSA1 |
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1
Part Status: Obsolete
NTC Thermistor: No
Configuration: Single
Input: Standard
Packaging: Tray
Description: PRESS PACK IGBT BG-P16826K-1
Part Status: Obsolete
NTC Thermistor: No
Configuration: Single
Input: Standard
Packaging: Tray
Produkt ist nicht verfügbar
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| BCR430UXTSA2 |
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Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 2153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 0.58 EUR |
| 52+ | 0.4 EUR |
| 58+ | 0.37 EUR |
| 100+ | 0.31 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.26 EUR |
| IPB50N10S3L16ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IPB50N10S3L16ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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| IPG20N10S436AATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1 EUR |
| 10000+ | 0.94 EUR |
| 15000+ | 0.93 EUR |
| BSC016N06NSSCATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| BGM7LLHM4L12E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Part Status: Obsolete
Supplier Device Package: TSLP-12-4
Current - Supply: 4.5mA
Gain: 13dB
Voltage - Supply: 1.5V ~ 3.3V
RF Type: LTE
Frequency: 700MHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 12-XFQFN Exposed Pad
Packaging: Bulk
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Part Status: Obsolete
Supplier Device Package: TSLP-12-4
Current - Supply: 4.5mA
Gain: 13dB
Voltage - Supply: 1.5V ~ 3.3V
RF Type: LTE
Frequency: 700MHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 12-XFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 682500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 175+ | 3.07 EUR |
| IPB47N10S33ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
Description: MOSFET N-CH 100V 47A TO263-3
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 311+ | 1.93 EUR |
| AUIRFR1010Z |
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Hersteller: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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| PXE1110ADM-G001 |
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
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| SPD04P10PGBTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 4A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| SPD04P10PGBTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 4A TO252-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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| ACCESSORY33234NOSA1 |
Hersteller: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
Description: ACCESSORY IGBT MODULEE
Produkt ist nicht verfügbar
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| FS20R06XL4BOMA1 |
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Produkt ist nicht verfügbar
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| SAKXC2286M104F80LAA |
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Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
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| SAK-XC2287M-72F80L AA |
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Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 16/32B 576KB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE8082ESXUMA1 |
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Hersteller: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.36 EUR |
| TLE8082ESXUMA1 |
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Hersteller: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 23989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.15 EUR |
| 10+ | 6.97 EUR |
| 25+ | 6.44 EUR |
| 100+ | 5.83 EUR |
| 250+ | 5.57 EUR |
| TLE8088EMXUMA1 |
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Hersteller: Infineon Technologies
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Grade: Automotive
Part Status: Active
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Grade: Automotive
Part Status: Active
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.69 EUR |
| 10+ | 3.5 EUR |
| 25+ | 3.19 EUR |
| 100+ | 2.86 EUR |
| 250+ | 2.7 EUR |
| 500+ | 2.64 EUR |
| SAK-XC2269I136F128LRAAKXUMA1 |
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Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x12b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 90K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x12b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 90K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAK-XC2220U-4F40VAA |
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Hersteller: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Description: 16-BIT C166 MICROCONTROLLER - XC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE92104131QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE92104131QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Cut Tape (CT)
Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Cut Tape (CT)
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.71 EUR |
| 10+ | 4.28 EUR |
| 25+ | 3.92 EUR |
| 100+ | 3.52 EUR |
| 250+ | 3.33 EUR |
| 500+ | 3.28 EUR |
| TLE9872QXA40XUMA1 |
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Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE987x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE987x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 7.98 EUR |
| TLE9862QXA40XUMA1 |
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Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE986x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE986x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE92104232QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Part Status: Active
Fault Protection: Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 48VQFN
Part Status: Active
Fault Protection: Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.15 EUR |
| TLE9185QXV33XUMA1 |
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Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.56 EUR |
| TLE9185QXV33XUMA1 |
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Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
auf Bestellung 9030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.81 EUR |
| 10+ | 5.12 EUR |
| 25+ | 4.7 EUR |
| 100+ | 4.25 EUR |
| 250+ | 4.02 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.78 EUR |
| TLE9185QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE9185QXXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 5.96 EUR |
| 25+ | 5.4 EUR |
| 100+ | 4.8 EUR |
| 250+ | 4.51 EUR |
| 500+ | 4.34 EUR |
| 1000+ | 4.2 EUR |
| 6EDL7141XUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.17 EUR |
| 6EDL7141XUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.95 EUR |
| 10+ | 4.46 EUR |
| 25+ | 4.09 EUR |
| 100+ | 3.68 EUR |
| 250+ | 3.49 EUR |
| 500+ | 3.44 EUR |
| BGA7P320E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-16-12
Test Frequency: 3.3GHz ~ 4.2GHz
P1dB: 27.8dBm
Noise Figure: 3.5dB
Gain: 34.4dB
Voltage - Supply: 3.15V ~ 3.45V
RF Type: 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-16-12
Test Frequency: 3.3GHz ~ 4.2GHz
P1dB: 27.8dBm
Noise Figure: 3.5dB
Gain: 34.4dB
Voltage - Supply: 3.15V ~ 3.45V
RF Type: 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFS23N20DTRRP |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Description: MOSFET N-CH 200V 24A D2PAK
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
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| BSC240N12NS3G |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| SIDC81D60E6YX1SA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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| SIDC81D120F6YX1SA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
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| DDB6U100N16RRBPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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| F411MR12W2M1B76BOMA1 |
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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| IGT40R070D1ATMA1 |
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Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
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| IST007N04NM6AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.21 EUR |
| 10+ | 5.44 EUR |
| REFICL8810LED43WBMTOBO1 |
Hersteller: Infineon Technologies
Description: ICL8810 REF BOARD 43W BM
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
Description: ICL8810 REF BOARD 43W BM
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 108.36 EUR |
| IPLK70R900P7ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
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| IPD100N06S403ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.84 EUR |
| CYW4329HKUBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Part Status: Obsolete
Serial Interfaces: I²C, I²S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Supplier Device Package: 182-WLBGA (6.57x5.62)
Protocol: Bluetooth v2.1
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Part Status: Obsolete
Serial Interfaces: I²C, I²S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Supplier Device Package: 182-WLBGA (6.57x5.62)
Protocol: Bluetooth v2.1
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| CYW4329FKUBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Part Status: Obsolete
Serial Interfaces: I²C, I²S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Supplier Device Package: 182-WLBGA (6.57x5.62)
Protocol: Bluetooth v2.1
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Part Status: Obsolete
Serial Interfaces: I²C, I²S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Supplier Device Package: 182-WLBGA (6.57x5.62)
Protocol: Bluetooth v2.1
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| CYW4325GKWBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CYW4330FKUBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CYW4330XKUBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CYW20740A2KMLG |
Hersteller: Infineon Technologies
Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| IPTG007N06NM5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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