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EVALPASCO2MINIBOARDTOBO1 EVALPASCO2MINIBOARDTOBO1 Infineon Technologies Infineon-PASCO2V01-DataSheet-v01_03-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2 Description: EVAL BRD
Contents: Board(s)
Embedded: Yes, MCU
Supplied Contents: Board(s)
Utilized IC / Part: PAS CO2
Sensor Type: Carbon Dioxide (CO2)
Voltage - Supply: 3.3V, 12V
Interface: I2C, PWM, UART
Sensitivity: ±3%
Packaging: Bulk
auf Bestellung 78 Stücke:
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1+44.53 EUR
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EVALPASCO2SENSOR2GOTOBO1 EVALPASCO2SENSOR2GOTOBO1 Infineon Technologies EVALPASCO2SENSOR2GOTOBO1.pdf Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s), Cable(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 7 Stücke:
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1+129.25 EUR
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IR35201MTRPBF IR35201MTRPBF Infineon Technologies pb-ir35201.pdf Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IR35201MTRPBF IR35201MTRPBF Infineon Technologies pb-ir35201.pdf Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
auf Bestellung 506 Stücke:
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2+9.89 EUR
10+7.6 EUR
25+7.03 EUR
100+6.4 EUR
250+6.18 EUR
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IPP330P10NMAKSA1 IPP330P10NMAKSA1 Infineon Technologies Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
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3+8.11 EUR
50+4.22 EUR
100+3.84 EUR
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BCR192WH6327XTSA1 BCR192WH6327XTSA1 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 147000 Stücke:
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4486+0.1 EUR
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BCR192WH6327 BCR192WH6327 Infineon Technologies INFNS17191-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Transistor Type: PNP - Pre-Biased
Produkt ist nicht verfügbar
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BCR 192 E6327 BCR 192 E6327 Infineon Technologies INFNS11617-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 30000 Stücke:
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8013+0.066 EUR
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BCR192E6785HTSA1 BCR192E6785HTSA1 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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8955+0.045 EUR
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BCR192E6327 BCR192E6327 Infineon Technologies INFNS11617-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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BCR 192F E6327 BCR 192F E6327 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR 192L3 E6327 BCR 192L3 E6327 Infineon Technologies BCR192%20%282003%29.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR 192T E6327 BCR 192T E6327 Infineon Technologies BCR192%20%282003%29.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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IRDC3883 IRDC3883 Infineon Technologies Infineon-UG-IRDC3883-UM-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a6a3ca216105a Description: EVAL IR3883
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3883
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 800kHz
Current - Output: 3A
Voltage - Input: 12V
Voltage - Output: 3.3V
Packaging: Box
auf Bestellung 3 Stücke:
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1+75.42 EUR
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IPD079N06L3GATMA1 IPD079N06L3GATMA1 Infineon Technologies Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 7500 Stücke:
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2500+0.82 EUR
5000+0.77 EUR
7500+0.74 EUR
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IPA60R600CPXKSA1 IPA60R600CPXKSA1 Infineon Technologies Infineon-IPA60R600CP-DS-v02_00-en.pdf?fileId=db3a3043183a95550118792d4e540458 Description: IPA60R600 - 600V COOLMOS N-CHANN
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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451+1.09 EUR
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BAV99UE6327 Infineon Technologies Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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DD340N22STIMHPSA1 DD340N22STIMHPSA1 Infineon Technologies Infineon-DD340N22S-DataSheet-v03_08-EN.pdf?fileId=5546d4625cc9456a015d06e5e1597efa Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
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1+157.98 EUR
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DD340N18SHPSA1 DD340N18SHPSA1 Infineon Technologies DD340N18S.pdf Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Produkt ist nicht verfügbar
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BTS50015-1TMA BTS50015-1TMA Infineon Technologies INFN-S-A0000308628-1.pdf?t.download=true&u=5oefqw Description: BTS50015 - PROFET - SMART HIGH S
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-7 Formed Leads
Features: Slew Rate Controlled
Packaging: Bulk
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-7-232
Ratio - Input:Output: 1:1
Current - Output (Max): 33A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Produkt ist nicht verfügbar
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BTS500151TADATMA1 BTS500151TADATMA1 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Qualification: AEC-Q100
Grade: Automotive
Part Status: Discontinued at Digi-Key
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 33A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS500151TADATMA1 BTS500151TADATMA1 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 33A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Produkt ist nicht verfügbar
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S29GL064N90FAI030 S29GL064N90FAI030 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FB50R07W2E3B23BOMA1 FB50R07W2E3B23BOMA1 Infineon Technologies FB50R07W2E3_B23_v1.01_9-16-22.pdf Description: IGBT MODULE 650V 50A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Single Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Input Capacitance (Cies) @ Vce: 3100 pF @ 25 V
Current - Collector Cutoff (Max): 18 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Part Status: Active
Packaging: Tray
auf Bestellung 13 Stücke:
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1+73.37 EUR
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TC377TP96F300SAAKXUMA1 TC377TP96F300SAAKXUMA1 Infineon Technologies Infineon-AURIX_TC37x_Addendum-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730574c782647e Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF2055NV2.1 Infineon Technologies Description: PCM INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
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18+24.95 EUR
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IPD50N06S409ATMA2 IPD50N06S409ATMA2 Infineon Technologies INFNS13307-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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2500+0.87 EUR
5000+0.81 EUR
7500+0.77 EUR
12500+0.74 EUR
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FP40R12KE3BPSA1 FP40R12KE3BPSA1 Infineon Technologies Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189 Description: IGBT MODULE 1200V 55A AG-ECONO2C
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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CY7C0251E-15AXC CY7C0251E-15AXC Infineon Technologies download Description: IC SRAM 144KBIT 15NS 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 144Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 8K x 18
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CYPD2120-24LQXI CYPD2120-24LQXI Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
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BAS40-02LE6327 BAS40-02LE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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F4100R17ME4B11BPSA2 F4100R17ME4B11BPSA2 Infineon Technologies Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9 Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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FP100R12N2T7BPSA1 FP100R12N2T7BPSA1 Infineon Technologies Infineon-FP100R12N2T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ac713c07107 Description: LOW POWER ECONO AG-ECONO2-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FP100R12N3T7B11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-711
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FP100R12N3T7B16BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-711
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FP100R12N3T7BPSA1 FP100R12N3T7BPSA1 Infineon Technologies Infineon-FP100R12N3T7-DataSheet-v00_21-EN.pdf?fileId=8ac78c8c80027ecd0180a915b97f1e7a Description: IGBT MODULE 1200V 100A
Packaging: Tray
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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FP100R12W3T7B11BPSA1 FP100R12W3T7B11BPSA1 Infineon Technologies Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900 Description: IGBT MOD 1200V 100A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS100R07N2E4B11BPSA1 Infineon Technologies Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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FS100R07N2E4BPSA1 FS100R07N2E4BPSA1 Infineon Technologies Infineon-FS100R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f5fa2e396f Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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FS100R12KT4BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R12N2T4BPSA2 Infineon Technologies Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038 Description: IGBT MOD 1200V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R12W2T7BOMA1 FS100R12W2T7BOMA1 Infineon Technologies Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e Description: IGBT MODULE 1200V 70A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS100R12W2T7PBPSA1 FS100R12W2T7PBPSA1 Infineon Technologies Infineon-FS100R12W2T7-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS3L100R07W3S5B11BPSA1 FS3L100R07W3S5B11BPSA1 Infineon Technologies Infineon-FS3L100R07W3S5_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef66f72131c Description: IGBT MODULE 650V 70A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
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F4100R06KL4BOSA1 F4100R06KL4BOSA1 Infineon Technologies Description: IGBT MOD 600V 130A 430W
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FP75R17N3E4B11BPSA1 FP75R17N3E4B11BPSA1 Infineon Technologies Infineon-FP75R17N3E4_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d59ef65a00007 Description: IGBT MODULE 1700V 150A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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2+294.06 EUR
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FP75R17N3E4PB21BPSA1 Infineon Technologies infineon-fs75r17w2e4p-b11-datasheet-en.pdf Description: IGBT MODULE 1700V 125A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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BAW56-B5003 BAW56-B5003 Infineon Technologies Description: HIGH SPEED SWITCHING DIODE
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IGW50N65H5 IGW50N65H5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 80A 305W PG-TO247-3
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CY7C1568KV18-500BZXI CY7C1568KV18-500BZXI Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Package / Case: 165-LBGA
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
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CY7C1570KV18-500BZC CY7C1570KV18-500BZC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
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CY7C25632KV18-500BZXC CY7C25632KV18-500BZXC Infineon Technologies Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra Description: IC SRAM 72MBIT PAR 165FBGA
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
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BGSA147ML10E6327XTSA1 BGSA147ML10E6327XTSA1 Infineon Technologies Infineon-BGSA147ML10-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177ba20358645ab Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
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20+0.9 EUR
23+0.77 EUR
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100+0.66 EUR
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500+0.6 EUR
1000+0.57 EUR
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BGSX44MU18E6327XUSA1 BGSX44MU18E6327XUSA1 Infineon Technologies Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7 Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
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BGSX44MU18E6327XUSA1 BGSX44MU18E6327XUSA1 Infineon Technologies Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7 Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Cut Tape (CT)
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25+1.99 EUR
100+1.78 EUR
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1000+1.56 EUR
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BSZ050N03LSG BSZ050N03LSG Infineon Technologies INFNS16421-1.pdf?t.download=true&u=5oefqw Description: BSZ050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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BSZ050N03MSG BSZ050N03MSG Infineon Technologies INFNS16422-1.pdf?t.download=true&u=5oefqw Description: BSZ050N03 - 12V-300V N-CHANNEL P
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BSM300GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 600A 2520W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 888 Stücke:
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2+256.86 EUR
Mindestbestellmenge: 2 Stücke
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FD300R12KS4B5HOSA1 FD300R12KS4B5HOSA1 Infineon Technologies Infineon-FD300R12KS4_B5-DS-v02_00-en_de.pdf?fileId=db3a304318a6cd680118aceb98fa7763 Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 536 Stücke:
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3+208.38 EUR
Mindestbestellmenge: 3 Stücke
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BAS16-02VE6327 BAS16-02VE6327 Infineon Technologies INFNS13366-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 85V
Produkt ist nicht verfügbar
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EVALPASCO2MINIBOARDTOBO1 Infineon-PASCO2V01-DataSheet-v01_03-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2
EVALPASCO2MINIBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD
Contents: Board(s)
Embedded: Yes, MCU
Supplied Contents: Board(s)
Utilized IC / Part: PAS CO2
Sensor Type: Carbon Dioxide (CO2)
Voltage - Supply: 3.3V, 12V
Interface: I2C, PWM, UART
Sensitivity: ±3%
Packaging: Bulk
auf Bestellung 78 Stücke:
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AnzahlPreis
1+44.53 EUR
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EVALPASCO2SENSOR2GOTOBO1 EVALPASCO2SENSOR2GOTOBO1.pdf
EVALPASCO2SENSOR2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s), Cable(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
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AnzahlPreis
1+129.25 EUR
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IR35201MTRPBF pb-ir35201.pdf
IR35201MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IR35201MTRPBF pb-ir35201.pdf
IR35201MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.89 EUR
10+7.6 EUR
25+7.03 EUR
100+6.4 EUR
250+6.18 EUR
Mindestbestellmenge: 2 Stücke
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IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
IPP330P10NMAKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 221 Stücke:
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AnzahlPreis
3+8.11 EUR
50+4.22 EUR
100+3.84 EUR
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BCR192WH6327XTSA1 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR192WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4486+0.1 EUR
Mindestbestellmenge: 4486 Stücke
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BCR192WH6327 INFNS17191-1.pdf?t.download=true&u=5oefqw
BCR192WH6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Transistor Type: PNP - Pre-Biased
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BCR 192 E6327 INFNS11617-1.pdf?t.download=true&u=5oefqw
BCR 192 E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8013+0.066 EUR
Mindestbestellmenge: 8013 Stücke
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BCR192E6785HTSA1 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR192E6785HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 93855 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8955+0.045 EUR
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BCR192E6327 INFNS11617-1.pdf?t.download=true&u=5oefqw
BCR192E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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BCR 192F E6327 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR 192F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 39000 Stücke
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BCR 192L3 E6327 BCR192%20%282003%29.pdf
BCR 192L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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BCR 192T E6327 BCR192%20%282003%29.pdf
BCR 192T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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IRDC3883 Infineon-UG-IRDC3883-UM-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a6a3ca216105a
IRDC3883
Hersteller: Infineon Technologies
Description: EVAL IR3883
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3883
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 800kHz
Current - Output: 3A
Voltage - Input: 12V
Voltage - Output: 3.3V
Packaging: Box
auf Bestellung 3 Stücke:
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AnzahlPreis
1+75.42 EUR
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IPD079N06L3GATMA1 Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0
IPD079N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.82 EUR
5000+0.77 EUR
7500+0.74 EUR
Mindestbestellmenge: 2500 Stücke
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IPA60R600CPXKSA1 Infineon-IPA60R600CP-DS-v02_00-en.pdf?fileId=db3a3043183a95550118792d4e540458
IPA60R600CPXKSA1
Hersteller: Infineon Technologies
Description: IPA60R600 - 600V COOLMOS N-CHANN
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
451+1.09 EUR
Mindestbestellmenge: 451 Stücke
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BAV99UE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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DD340N22STIMHPSA1 Infineon-DD340N22S-DataSheet-v03_08-EN.pdf?fileId=5546d4625cc9456a015d06e5e1597efa
DD340N22STIMHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+157.98 EUR
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DD340N18SHPSA1 DD340N18S.pdf
DD340N18SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Produkt ist nicht verfügbar
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BTS50015-1TMA INFN-S-A0000308628-1.pdf?t.download=true&u=5oefqw
BTS50015-1TMA
Hersteller: Infineon Technologies
Description: BTS50015 - PROFET - SMART HIGH S
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-7 Formed Leads
Features: Slew Rate Controlled
Packaging: Bulk
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-7-232
Ratio - Input:Output: 1:1
Current - Output (Max): 33A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Produkt ist nicht verfügbar
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BTS500151TADATMA1 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Qualification: AEC-Q100
Grade: Automotive
Part Status: Discontinued at Digi-Key
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 33A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS500151TADATMA1 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 33A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Output Configuration: High Side
Produkt ist nicht verfügbar
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S29GL064N90FAI030 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FAI030
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FB50R07W2E3B23BOMA1 FB50R07W2E3_B23_v1.01_9-16-22.pdf
FB50R07W2E3B23BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 50A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Single Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Input Capacitance (Cies) @ Vce: 3100 pF @ 25 V
Current - Collector Cutoff (Max): 18 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Part Status: Active
Packaging: Tray
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+73.37 EUR
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TC377TP96F300SAAKXUMA1 Infineon-AURIX_TC37x_Addendum-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730574c782647e
TC377TP96F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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PEF2055NV2.1
Hersteller: Infineon Technologies
Description: PCM INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+24.95 EUR
Mindestbestellmenge: 18 Stücke
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IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
IPD50N06S409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.87 EUR
5000+0.81 EUR
7500+0.77 EUR
12500+0.74 EUR
Mindestbestellmenge: 2500 Stücke
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FP40R12KE3BPSA1 Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189
FP40R12KE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 55A AG-ECONO2C
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+128.8 EUR
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CY7C0251E-15AXC download
CY7C0251E-15AXC
Hersteller: Infineon Technologies
Description: IC SRAM 144KBIT 15NS 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 144Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 8K x 18
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+23.53 EUR
Mindestbestellmenge: 23 Stücke
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CYPD2120-24LQXI Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2120-24LQXI
Hersteller: Infineon Technologies
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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BAS40-02LE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-02LE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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F4100R17ME4B11BPSA2 Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9
F4100R17ME4B11BPSA2
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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FP100R12N2T7BPSA1 Infineon-FP100R12N2T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ac713c07107
FP100R12N2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Produkt ist nicht verfügbar
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FP100R12N3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
auf Bestellung 10 Stücke:
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FP100R12N3T7B16BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
Produkt ist nicht verfügbar
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FP100R12N3T7BPSA1 Infineon-FP100R12N3T7-DataSheet-v00_21-EN.pdf?fileId=8ac78c8c80027ecd0180a915b97f1e7a
FP100R12N3T7BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+168.71 EUR
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FP100R12W3T7B11BPSA1 Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900
FP100R12W3T7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+162.29 EUR
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FS100R07N2E4B11BPSA1 Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 45 Stücke
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FS100R07N2E4BPSA1 Infineon-FS100R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f5fa2e396f
FS100R07N2E4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+103.59 EUR
15+76.63 EUR
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FS100R12KT4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R12N2T4BPSA2 Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
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FS100R12W2T7BOMA1 Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e
FS100R12W2T7BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 70A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+103.4 EUR
15+78.97 EUR
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FS100R12W2T7PBPSA1 Infineon-FS100R12W2T7-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e
FS100R12W2T7PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+131.37 EUR
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FS3L100R07W3S5B11BPSA1 Infineon-FS3L100R07W3S5_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef66f72131c
FS3L100R07W3S5B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 70A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+131.63 EUR
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F4100R06KL4BOSA1
F4100R06KL4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 430W
Produkt ist nicht verfügbar
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FP75R17N3E4B11BPSA1 Infineon-FP75R17N3E4_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d59ef65a00007
FP75R17N3E4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 150A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+294.06 EUR
Mindestbestellmenge: 2 Stücke
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FP75R17N3E4PB21BPSA1 infineon-fs75r17w2e4p-b11-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 125A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Produkt ist nicht verfügbar
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BAW56-B5003
BAW56-B5003
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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IGW50N65H5 Part_Number_Guide_Web.pdf
IGW50N65H5
Hersteller: Infineon Technologies
Description: IGBT 650V 80A 305W PG-TO247-3
Produkt ist nicht verfügbar
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CY7C1568KV18-500BZXI CY7C1568%2C70KV18.pdf
CY7C1568KV18-500BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Package / Case: 165-LBGA
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+479.03 EUR
Mindestbestellmenge: 2 Stücke
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CY7C1570KV18-500BZC download
CY7C1570KV18-500BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+430.01 EUR
Mindestbestellmenge: 2 Stücke
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CY7C25632KV18-500BZXC Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra
CY7C25632KV18-500BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+180.14 EUR
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BGSA147ML10E6327XTSA1 Infineon-BGSA147ML10-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177ba20358645ab
BGSA147ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
auf Bestellung 6147 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
23+0.77 EUR
25+0.72 EUR
100+0.66 EUR
250+0.62 EUR
500+0.6 EUR
1000+0.57 EUR
Mindestbestellmenge: 20 Stücke
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BGSX44MU18E6327XUSA1 Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7
BGSX44MU18E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4500 Stücke
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BGSX44MU18E6327XUSA1 Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7
BGSX44MU18E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.96 EUR
10+2.19 EUR
25+1.99 EUR
100+1.78 EUR
250+1.67 EUR
500+1.61 EUR
1000+1.56 EUR
Mindestbestellmenge: 6 Stücke
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BSZ050N03LSG INFNS16421-1.pdf?t.download=true&u=5oefqw
BSZ050N03LSG
Hersteller: Infineon Technologies
Description: BSZ050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ050N03MSG INFNS16422-1.pdf?t.download=true&u=5oefqw
BSZ050N03MSG
Hersteller: Infineon Technologies
Description: BSZ050N03 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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BSM300GA170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 2520W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+256.86 EUR
Mindestbestellmenge: 2 Stücke
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FD300R12KS4B5HOSA1 Infineon-FD300R12KS4_B5-DS-v02_00-en_de.pdf?fileId=db3a304318a6cd680118aceb98fa7763
FD300R12KS4B5HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+208.38 EUR
Mindestbestellmenge: 3 Stücke
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BAS16-02VE6327 INFNS13366-1.pdf?t.download=true&u=5oefqw
BAS16-02VE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 85V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10111 Stücke
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