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ISC0703NLSATMA1 ISC0703NLSATMA1 Infineon Technologies Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6 Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 13765 Stücke:
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7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.7 EUR
Mindestbestellmenge: 7
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BSM25GD120DN2E3224BPSA1 Infineon Technologies Description: IGBT MODULE 1200V 35A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
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IRG4CC30UB Infineon Technologies IRG4CC30UB_9-27-07.pdf Description: IGBT CHIP
Produkt ist nicht verfügbar
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CYW4356XKWBGT Infineon Technologies Infineon-CYW4356_CG8674_Single-Chip_5G_WiFi_IEEE_802.11ac_2x2_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4c6ad6bfa&utm_source=cypress&utm_medium=referral&utm_campaig Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 395-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 19.5dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 395-WLCSP (4.87x7.67)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW4339XKWBGT Infineon Technologies download Description: IC RF TXRX+MCU BLUTOOTH 286XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 286-XFBGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 286-WLCSP (4.87x5.41)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGS12SL6E6327 Infineon Technologies INFNS28176-1.pdf?t.download=true&u=5oefqw Description: GENERAL PURPOSE SWITCH SPDT
Packaging: Bulk
Package / Case: 6-XFDFN
Impedance: 50Ohm
Circuit: SPDT
RF Type: GSM, LTE, WCDMA
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: TSLP-6-4
IIP3: 65dBm
Part Status: Active
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BGS12AL7-4E6327 Infineon Technologies INFNS13340-1.pdf?t.download=true&u=5oefqw Description: RF SWITCH
Packaging: Bulk
Package / Case: 6-XDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Test Frequency: 2GHz
Isolation: 20dB
Supplier Device Package: PG-TSLP-7-4
Part Status: Active
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IPTG111N20NM3FDATMA1 IPTG111N20NM3FDATMA1 Infineon Technologies Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Produkt ist nicht verfügbar
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IPTG111N20NM3FDATMA1 IPTG111N20NM3FDATMA1 Infineon Technologies Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 1726 Stücke:
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10+8.65 EUR
100+6.34 EUR
500+5.58 EUR
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IPTG210N25NM3FDATMA1 IPTG210N25NM3FDATMA1 Infineon Technologies Infineon-IPTG210N25NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa52f0487dfb Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
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1800+6.62 EUR
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IPTG210N25NM3FDATMA1 IPTG210N25NM3FDATMA1 Infineon Technologies Infineon-IPTG210N25NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa52f0487dfb Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
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2+12.36 EUR
10+8.81 EUR
100+6.72 EUR
500+6.62 EUR
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ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Infineon Technologies Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10000 Stücke:
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5000+0.59 EUR
Mindestbestellmenge: 5000
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ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Infineon Technologies Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10288 Stücke:
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8+2.27 EUR
12+1.48 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.68 EUR
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PX8143HDMG018XTMA1 Infineon Technologies Description: LED PX8143HDMG018XTMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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2ED24427N01FXUMA1 2ED24427N01FXUMA1 Infineon Technologies Infineon-2ED24427N01F-DataSheet-v02_00-EN.pdf?fileId=5546d46275b79adb0175c0b0b3833ee7 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-900
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 10A, 10A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KITAURIXTC224TFTTOBO1 KITAURIXTC224TFTTOBO1 Infineon Technologies Infineon-KIT_AURIX_TC224_TFT-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c85c5843a7f4c Description: EVAL TC224 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC224
Platform: AURIX
auf Bestellung 3 Stücke:
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1+451.46 EUR
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KITAURIXTC265TFTTOBO1 KITAURIXTC265TFTTOBO1 Infineon Technologies Infineon-KIT_AURIX_TC2x5_TFT-UserManual-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c860ebecf0149 Description: AURIX APPLICATION KIT TC265 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC265
Platform: AURIX
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1+451.46 EUR
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DHP0070N10N5AUMA1 Infineon Technologies Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALHBPARALLELGANTOBO1 EVALHBPARALLELGANTOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_HB_ParallelGaN-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462712ef9b701717861cc8a11c4 Description: EVAL_HB_PARALLELGAN
Packaging: Bulk
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 1 Non-Isolated Output
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1+230.42 EUR
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IPC60R037P7X7SA1 Infineon Technologies Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
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PMB8753AV2.04 Infineon Technologies Description: INFINEON PMB8753AV TELECOM IC -
Packaging: Bulk
auf Bestellung 15000 Stücke:
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63+7.16 EUR
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PMB8787V2.0 Infineon Technologies PMB8787.pdf?t.download=true&u=ovmfp3 Description: PMB8787V2.0 TELECOM IC
Packaging: Bulk
auf Bestellung 200 Stücke:
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57+8.03 EUR
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PEB2261NV2.0G Infineon Technologies Description: SICOFI 2 DUAL CH CODEC FILTER
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PEF2261NGV2.0 Infineon Technologies Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 8000 Stücke:
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21+24.39 EUR
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PEB2261NV2.0 Infineon Technologies Description: SICOFI 2 DUAL CHANNEL CODEC FILT
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PEF2261NWDGV2.0 Infineon Technologies Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
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19+26.95 EUR
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PEF2261NV2.0 Infineon Technologies Description: SICOFI 2 DUAL CHANNEL CODEC FILT
Packaging: Bulk
auf Bestellung 27371 Stücke:
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19+27.09 EUR
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IAUC60N06S5N074ATMA1 IAUC60N06S5N074ATMA1 Infineon Technologies Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.55 EUR
Mindestbestellmenge: 5000
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IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 Infineon Technologies Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60R075CFD7XTMA1 IPDQ60R075CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
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750+4.43 EUR
Mindestbestellmenge: 750
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IPDQ60R055CFD7XTMA1 IPDQ60R055CFD7XTMA1 Infineon Technologies Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IPDQ60R045CFD7XTMA1 IPDQ60R045CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
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750+6.44 EUR
Mindestbestellmenge: 750
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IPDQ60R035CFD7XTMA1 IPDQ60R035CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
750+9.19 EUR
Mindestbestellmenge: 750
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IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Infineon Technologies Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
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IPP050N10NF2SAKMA1 IPP050N10NF2SAKMA1 Infineon Technologies Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 794 Stücke:
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5+3.92 EUR
50+1.62 EUR
100+1.59 EUR
500+1.49 EUR
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DHP1050N10N5AUMA1 DHP1050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP1050N10N5AUMA1 DHP1050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP0050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPU60R1K4C6 IPU60R1K4C6 Infineon Technologies INFNS17573-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
1072+0.49 EUR
Mindestbestellmenge: 1072
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IPDD60R145CFD7XTMA1 IPDD60R145CFD7XTMA1 Infineon Technologies Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7 Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1700 Stücke:
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1700+2.37 EUR
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DDB2U60N12W1RFB11BPSA1 DDB2U60N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183 Description: BRIDGE RECT 1P 1.2KV 60A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 ISP14EP15LMXTSA1 Infineon Technologies Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 ISP14EP15LMXTSA1 Infineon Technologies Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
40+0.45 EUR
45+0.4 EUR
100+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 28
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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IDK03G65C5XTMA2 IDK03G65C5XTMA2 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
347+1.45 EUR
Mindestbestellmenge: 347
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SLS32AIA010MLUSON10XTMA2 SLS32AIA010MLUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLS32AIA010MLUSON10XTMA2 SLS32AIA010MLUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.91 EUR
Mindestbestellmenge: 2
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IPB80N06S4L05ATMA2 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET_)40V,60V)
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA2 IPB80P04P4L06ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.5 EUR
Mindestbestellmenge: 1000
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IPB80P04P4L06ATMA2 IPB80P04P4L06ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
10+2.94 EUR
100+2.02 EUR
500+1.62 EUR
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IPP80P03P4L04AKSA2 IPP80P03P4L04AKSA2 Infineon Technologies Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7 Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
50+2.75 EUR
100+2.53 EUR
Mindestbestellmenge: 4
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FS25R12W1T7BOMA1 FS25R12W1T7BOMA1 Infineon Technologies Infineon-FS25R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188efca7334 Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 19 Stücke:
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1+50.12 EUR
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FS25R12W1T7PB11BPSA1 FS25R12W1T7PB11BPSA1 Infineon Technologies Infineon-FS25R12W1T7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173e165e5d65778 Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.56 EUR
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FP25R12W1T7B3BPSA1 FP25R12W1T7B3BPSA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W1T7BOMA1 FP25R12W1T7BOMA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W2T7BPSA1 FP25R12W2T7BPSA1 Infineon Technologies Infineon-FP25R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742692f69465ca Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+75.28 EUR
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FP25R12W1T7PBPSA1 FP25R12W1T7PBPSA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+76.95 EUR
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F475R07W2H3B51BPSA1 Infineon Technologies Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9 Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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ISC0703NLSATMA1 Infineon-ISC0703NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd753b066df6
ISC0703NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 13765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.7 EUR
Mindestbestellmenge: 7
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BSM25GD120DN2E3224BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 35A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
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IRG4CC30UB IRG4CC30UB_9-27-07.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Produkt ist nicht verfügbar
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CYW4356XKWBGT Infineon-CYW4356_CG8674_Single-Chip_5G_WiFi_IEEE_802.11ac_2x2_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4c6ad6bfa&utm_source=cypress&utm_medium=referral&utm_campaig
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 395-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 19.5dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 395-WLCSP (4.87x7.67)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW4339XKWBGT download
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 286XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 286-XFBGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 286-WLCSP (4.87x5.41)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGS12SL6E6327 INFNS28176-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: GENERAL PURPOSE SWITCH SPDT
Packaging: Bulk
Package / Case: 6-XFDFN
Impedance: 50Ohm
Circuit: SPDT
RF Type: GSM, LTE, WCDMA
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: TSLP-6-4
IIP3: 65dBm
Part Status: Active
auf Bestellung 4207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2251+0.21 EUR
Mindestbestellmenge: 2251
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BGS12AL7-4E6327 INFNS13340-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF SWITCH
Packaging: Bulk
Package / Case: 6-XDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Test Frequency: 2GHz
Isolation: 20dB
Supplier Device Package: PG-TSLP-7-4
Part Status: Active
auf Bestellung 39074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1731+0.3 EUR
Mindestbestellmenge: 1731
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IPTG111N20NM3FDATMA1 Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea
IPTG111N20NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Produkt ist nicht verfügbar
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IPTG111N20NM3FDATMA1 Infineon-IPTG111N20NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa5221467dea
IPTG111N20NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.74 EUR
10+8.65 EUR
100+6.34 EUR
500+5.58 EUR
Mindestbestellmenge: 2
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IPTG210N25NM3FDATMA1 Infineon-IPTG210N25NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa52f0487dfb
IPTG210N25NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+6.62 EUR
Mindestbestellmenge: 1800
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IPTG210N25NM3FDATMA1 Infineon-IPTG210N25NM3FD-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa52f0487dfb
IPTG210N25NM3FDATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.36 EUR
10+8.81 EUR
100+6.72 EUR
500+6.62 EUR
Mindestbestellmenge: 2
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ISC028N04NM5ATMA1 Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a
ISC028N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
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ISC028N04NM5ATMA1 Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a
ISC028N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
12+1.48 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
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PX8143HDMG018XTMA1
Hersteller: Infineon Technologies
Description: LED PX8143HDMG018XTMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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2ED24427N01FXUMA1 Infineon-2ED24427N01F-DataSheet-v02_00-EN.pdf?fileId=5546d46275b79adb0175c0b0b3833ee7
2ED24427N01FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-900
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 10A, 10A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KITAURIXTC224TFTTOBO1 Infineon-KIT_AURIX_TC224_TFT-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c85c5843a7f4c
KITAURIXTC224TFTTOBO1
Hersteller: Infineon Technologies
Description: EVAL TC224 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC224
Platform: AURIX
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+451.46 EUR
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KITAURIXTC265TFTTOBO1 Infineon-KIT_AURIX_TC2x5_TFT-UserManual-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c860ebecf0149
KITAURIXTC265TFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX APPLICATION KIT TC265 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC265
Platform: AURIX
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+451.46 EUR
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DHP0070N10N5AUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALHBPARALLELGANTOBO1 Infineon-Evaluationboard_EVAL_HB_ParallelGaN-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462712ef9b701717861cc8a11c4
EVALHBPARALLELGANTOBO1
Hersteller: Infineon Technologies
Description: EVAL_HB_PARALLELGAN
Packaging: Bulk
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+230.42 EUR
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IPC60R037P7X7SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
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PMB8753AV2.04
Hersteller: Infineon Technologies
Description: INFINEON PMB8753AV TELECOM IC -
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+7.16 EUR
Mindestbestellmenge: 63
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PMB8787V2.0 PMB8787.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: PMB8787V2.0 TELECOM IC
Packaging: Bulk
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
57+8.03 EUR
Mindestbestellmenge: 57
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PEB2261NV2.0G
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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PEF2261NGV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+24.39 EUR
Mindestbestellmenge: 21
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PEB2261NV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CHANNEL CODEC FILT
auf Bestellung 1091 Stücke:
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PEF2261NWDGV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+26.95 EUR
Mindestbestellmenge: 19
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PEF2261NV2.0
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CHANNEL CODEC FILT
Packaging: Bulk
auf Bestellung 27371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+27.09 EUR
Mindestbestellmenge: 19
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IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
IAUC60N06S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
Mindestbestellmenge: 5000
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IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
IAUC60N06S5L073ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60R075CFD7XTMA1 Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e
IPDQ60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+4.43 EUR
Mindestbestellmenge: 750
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IPDQ60R055CFD7XTMA1
IPDQ60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IPDQ60R045CFD7XTMA1 Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd
IPDQ60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+6.44 EUR
Mindestbestellmenge: 750
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IPDQ60R035CFD7XTMA1 Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c
IPDQ60R035CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+9.19 EUR
Mindestbestellmenge: 750
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IPDQ60R022S7XTMA1 Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518
IPDQ60R022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
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IPP050N10NF2SAKMA1 Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008
IPP050N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
50+1.62 EUR
100+1.59 EUR
500+1.49 EUR
Mindestbestellmenge: 5
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DHP1050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
DHP1050N10N5AUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP1050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
DHP1050N10N5AUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP0050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPU60R1K4C6 INFNS17573-1.pdf?t.download=true&u=5oefqw
IPU60R1K4C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1072+0.49 EUR
Mindestbestellmenge: 1072
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IPDD60R145CFD7XTMA1 Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7
IPDD60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1700+2.37 EUR
Mindestbestellmenge: 1700
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DDB2U60N12W1RFB11BPSA1 Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183
DDB2U60N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 60A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
ISP14EP15LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
ISP14EP15LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.45 EUR
45+0.4 EUR
100+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 28
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IPB100N06S2L05ATMA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t
IPB100N06S2L05ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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IDK03G65C5XTMA2 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
347+1.45 EUR
Mindestbestellmenge: 347
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SLS32AIA010MLUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MLUSON10XTMA2
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLS32AIA010MLUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MLUSON10XTMA2
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.91 EUR
Mindestbestellmenge: 2
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IPB80N06S4L05ATMA2 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
Hersteller: Infineon Technologies
Description: MOSFET_)40V,60V)
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA2 Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.5 EUR
Mindestbestellmenge: 1000
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IPB80P04P4L06ATMA2 Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.94 EUR
100+2.02 EUR
500+1.62 EUR
Mindestbestellmenge: 4
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IPP80P03P4L04AKSA2 Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7
IPP80P03P4L04AKSA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
50+2.75 EUR
100+2.53 EUR
Mindestbestellmenge: 4
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FS25R12W1T7BOMA1 Infineon-FS25R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188efca7334
FS25R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.12 EUR
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FS25R12W1T7PB11BPSA1 Infineon-FS25R12W1T7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173e165e5d65778
FS25R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.56 EUR
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FP25R12W1T7B3BPSA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7B3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP25R12W1T7BOMA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W2T7BPSA1 Infineon-FP25R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742692f69465ca
FP25R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.28 EUR
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FP25R12W1T7PBPSA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.95 EUR
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F475R07W2H3B51BPSA1 Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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