Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (150715) > Seite 436 nach 2512
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ISP14EP15LMXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V |
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ISP14EP15LMXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB100N06S2L05ATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V |
Produkt ist nicht verfügbar |
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IDK03G65C5XTMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 100pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 650 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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SLS32AIA010MLUSON10XTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.62V ~ 5.5V Program Memory Type: NVM (10kB) Applications: Security Core Processor: 16-Bit Supplier Device Package: PG-USON-10-2 Part Status: Active DigiKey Programmable: Not Verified |
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SLS32AIA010MLUSON10XTMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.62V ~ 5.5V Program Memory Type: NVM (10kB) Applications: Security Core Processor: 16-Bit Supplier Device Package: PG-USON-10-2 Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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BTS244ZE3062AATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-5-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BTS244ZE3062AATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-5-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S4L05ATMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPB80P04P4L06ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 150µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80P04P4L06ATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 150µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1585 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP80P03P4L04AKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2V @ 253µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 451 Stücke: Lieferzeit 10-14 Tag (e) |
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FS25R12W1T7BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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FS25R12W1T7PB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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FP25R12W1T7B3BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
Produkt ist nicht verfügbar |
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FP25R12W1T7BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
Produkt ist nicht verfügbar |
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FP25R12W2T7BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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FP25R12W1T7PBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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F475R07W2H3B51BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V |
Produkt ist nicht verfügbar |
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1SD418F2FZ1200R33KNPSA1 | Infineon Technologies |
Description: MODULE GATE DRIVER Packaging: Tray |
Produkt ist nicht verfügbar |
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XC2336B40F20LAAKXUMA1 | Infineon Technologies |
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auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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XC2336B40F80LAAKXUMA1 | Infineon Technologies |
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Produkt ist nicht verfügbar |
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PMB2411FV1.1 | Infineon Technologies |
Description: DUAL BAND RECIEVER Packaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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PMB7860V1.1E-GICM | Infineon Technologies |
![]() Packaging: Bulk |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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MB95F118MWPMC-GSE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 52-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 52-LQFP (10x10) Number of I/O: 39 DigiKey Programmable: Not Verified |
auf Bestellung 561 Stücke: Lieferzeit 10-14 Tag (e) |
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MB95F118MWPMC-GSE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 52-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 52-LQFP (10x10) Number of I/O: 39 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SIGC06T60EX7SA1 | Infineon Technologies | Description: IGBT 3 CHIP 600V 10A WAFER |
Produkt ist nicht verfügbar |
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FZ1000R16KF4NOSA1 | Infineon Technologies | Description: IGBT MODULE |
Produkt ist nicht verfügbar |
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BSC034N10LS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 115µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC034N10LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 115µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V |
auf Bestellung 20161 Stücke: Lieferzeit 10-14 Tag (e) |
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SAK-TC277TC-64F200N DC | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 424K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 24K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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EVALM1IM828ATOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IM828-XCC Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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TCA505BG2XUMA1 | Infineon Technologies |
Description: INDUSTRIAL/ACCESSORY IC PG-DSO-1 Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Analog Mounting Type: Surface Mount Type: Proximity Detector Operating Temperature: -40°C ~ 110°C Input Type: Analog Supplier Device Package: PG-DSO-16 Part Status: Obsolete Current - Supply: 840 µA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IKD06N60RAATMA2 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 807 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGB30N65H5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V |
Produkt ist nicht verfügbar |
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AIKB30N65DF5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 67 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/188ns Switching Energy: 330µJ (on), 100µJ (off) Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
Produkt ist nicht verfügbar |
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AIKB30N65DF5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 67 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/188ns Switching Energy: 330µJ (on), 100µJ (off) Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
auf Bestellung 1683 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB30N65DH5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKB30N65DH5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V |
auf Bestellung 1486 Stücke: Lieferzeit 10-14 Tag (e) |
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IKWH30N65WR6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 136 W |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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IKWH30N65WR5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 41ns/398ns Switching Energy: 870µJ (on), 400µJ (off) Test Condition: 400V, 30A, 27Ohm, 15V Gate Charge: 133 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 190 W |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW30N65R6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 13ns/161ns Switching Energy: 730µJ (on), 260µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 163 W |
auf Bestellung 229 Stücke: Lieferzeit 10-14 Tag (e) |
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REFICL5102U100WLCCTOBO1 | Infineon Technologies |
![]() Features: Dimmable Packaging: Bulk Voltage - Output: 20V ~ 55V Voltage - Input: 90 ~ 267 VAC Contents: Board(s) Current - Output / Channel: 1.82A Utilized IC / Part: ICL5102 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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CYWB0226ABMX-FDXIT | Infineon Technologies |
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auf Bestellung 106106 Stücke: Lieferzeit 10-14 Tag (e) |
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CYWB0224ABM-BVXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-VFBGA Function: Controller Interface: Parallel Voltage - Supply: 1.8V ~ 3.3V Protocol: USB, Memory Card Standards: USB 2.0 Supplier Device Package: 100-VFBGA (6x6) DigiKey Programmable: Not Verified |
auf Bestellung 1261 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD5N25S3430ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD5N25S3430ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 8133 Stücke: Lieferzeit 10-14 Tag (e) |
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PEF20324HV2.2 | Infineon Technologies |
Description: NETWORK INTERFACE CONTROLLER Packaging: Bulk Part Status: Active |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IMC099TT038XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller Current - Output: 50mA Interface: Analog, PWM Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: Home Appliance Supplier Device Package: PG-TSSOP-38-9 Motor Type - AC, DC: AC, Synchronous |
auf Bestellung 1093 Stücke: Lieferzeit 10-14 Tag (e) |
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TLV4964-5TBXALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 26V Technology: Hall Effect Sensing Range: 2mT Trip, -2mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: TO-92S Test Condition: 25°C Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLV49644TBXALA1 | Infineon Technologies |
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auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
TLV49681TBXALA1 | Infineon Technologies |
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auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLV49611TBXALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 26V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: TO-92 Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 1822 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4999I3XALA1 | Infineon Technologies |
![]() Features: Programmable, Temperature Compensated Packaging: Tape & Box (TB) Package / Case: 3-SSIP Module Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 7V Bandwidth: 80Hz, 160Hz, 200Hz, 240Hz, 320Hz, 400Hz, 470Hz, 500Hz, 650Hz, 870Hz, 980Hz, 1.07kHz, 1.27kHz, 1.38kHz Technology: Hall Effect Resolution: 13 b Sensing Range: ±25mT Current - Output (Max): 30mA Current - Supply (Max): 14mA Supplier Device Package: PG-SSO-3-12 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE4999I3XALA1 | Infineon Technologies |
![]() Features: Programmable, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 3-SSIP Module Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 7V Bandwidth: 80Hz, 160Hz, 200Hz, 240Hz, 320Hz, 400Hz, 470Hz, 500Hz, 650Hz, 870Hz, 980Hz, 1.07kHz, 1.27kHz, 1.38kHz Technology: Hall Effect Resolution: 13 b Sensing Range: ±25mT Current - Output (Max): 30mA Current - Supply (Max): 14mA Supplier Device Package: PG-SSO-3-12 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 1621 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM300GA120DN2S2HDLA1 | Infineon Technologies |
Description: POWER MODULE IGBT 1200V AG-62MM Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLE4254GAXUMA4 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE4254GAXUMA1 | Infineon Technologies |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE4254GAXUMA1 | Infineon Technologies |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE4254GAXUMA3 | Infineon Technologies |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
ISP14EP15LMXTSA1 |
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Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISP14EP15LMXTSA1 |
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Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
40+ | 0.45 EUR |
45+ | 0.4 EUR |
100+ | 0.34 EUR |
250+ | 0.32 EUR |
IPB100N06S2L05ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDK03G65C5XTMA2 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
347+ | 1.45 EUR |
SLS32AIA010MLUSON10XTMA2 |
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Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLS32AIA010MLUSON10XTMA2 |
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Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS244ZE3062AATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS244ZE3062AATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.91 EUR |
IPB80N06S4L05ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET_)40V,60V)
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Description: MOSFET_)40V,60V)
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB80P04P4L06ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.5 EUR |
IPB80P04P4L06ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.4 EUR |
10+ | 2.94 EUR |
100+ | 2.02 EUR |
500+ | 1.62 EUR |
IPP80P03P4L04AKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.32 EUR |
50+ | 2.75 EUR |
100+ | 2.53 EUR |
FS25R12W1T7BOMA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 50.12 EUR |
FS25R12W1T7PB11BPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 60.56 EUR |
FP25R12W1T7B3BPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP25R12W1T7BOMA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP25R12W2T7BPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 75.28 EUR |
FP25R12W1T7PBPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 76.95 EUR |
F475R07W2H3B51BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC2336B40F20LAAKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Description: IC MCU 16/32B 320KB FLASH 64LQFP
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
XC2336B40F80LAAKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMB2411FV1.1 |
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
103+ | 4.53 EUR |
PMB7860V1.1E-GICM |
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auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 8.35 EUR |
MB95F118MWPMC-GSE1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.21 EUR |
MB95F118MWPMC-GSE1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIGC06T60EX7SA1 |
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 10A WAFER
Description: IGBT 3 CHIP 600V 10A WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FZ1000R16KF4NOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MODULE
Description: IGBT MODULE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC034N10LS5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 1.93 EUR |
BSC034N10LS5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 20161 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.78 EUR |
10+ | 3.26 EUR |
25+ | 3.08 EUR |
100+ | 2.83 EUR |
250+ | 2.68 EUR |
500+ | 2.58 EUR |
1000+ | 2.48 EUR |
SAK-TC277TC-64F200N DC |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
EVALM1IM828ATOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM828-XCC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM828-XCC
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR IM828-XCC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM828-XCC
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 308.46 EUR |
TCA505BG2XUMA1 |
Hersteller: Infineon Technologies
Description: INDUSTRIAL/ACCESSORY IC PG-DSO-1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16
Part Status: Obsolete
Current - Supply: 840 µA
DigiKey Programmable: Not Verified
Description: INDUSTRIAL/ACCESSORY IC PG-DSO-1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16
Part Status: Obsolete
Current - Supply: 840 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKD06N60RAATMA2 |
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auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
398+ | 1.21 EUR |
AIGB30N65H5ATMA1 |
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Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIKB30N65DF5ATMA1 |
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Hersteller: Infineon Technologies
Description: IC DISCRETE 650V TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Description: IC DISCRETE 650V TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIKB30N65DF5ATMA1 |
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Hersteller: Infineon Technologies
Description: IC DISCRETE 650V TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Description: IC DISCRETE 650V TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.27 EUR |
10+ | 5.51 EUR |
25+ | 5.07 EUR |
100+ | 4.59 EUR |
250+ | 4.36 EUR |
500+ | 4.22 EUR |
AIKB30N65DH5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.69 EUR |
AIKB30N65DH5ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.64 EUR |
10+ | 6.44 EUR |
100+ | 4.63 EUR |
500+ | 3.85 EUR |
IKWH30N65WR6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 136 W
Description: IGBT TRENCH FS 650V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 136 W
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.95 EUR |
30+ | 3.25 EUR |
120+ | 2.65 EUR |
IKWH30N65WR5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/398ns
Switching Energy: 870µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 27Ohm, 15V
Gate Charge: 133 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 190 W
Description: IGBT TRENCH FS 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/398ns
Switching Energy: 870µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 27Ohm, 15V
Gate Charge: 133 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 190 W
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.72 EUR |
30+ | 3.13 EUR |
120+ | 2.56 EUR |
IHW30N65R6XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 13ns/161ns
Switching Energy: 730µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 163 W
Description: IGBT 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 13ns/161ns
Switching Energy: 730µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 163 W
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.95 EUR |
30+ | 3.25 EUR |
120+ | 2.65 EUR |
REFICL5102U100WLCCTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 20V ~ 55V
Voltage - Input: 90 ~ 267 VAC
Contents: Board(s)
Current - Output / Channel: 1.82A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 20V ~ 55V
Voltage - Input: 90 ~ 267 VAC
Contents: Board(s)
Current - Output / Channel: 1.82A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 180.19 EUR |
CYWB0226ABMX-FDXIT |
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Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Description: IC WEST BRIDGE HS-USB 81-WLCSP
auf Bestellung 106106 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 22.11 EUR |
CYWB0224ABM-BVXI |
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Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
auf Bestellung 1261 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 23.46 EUR |
IPD5N25S3430ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.88 EUR |
5000+ | 0.84 EUR |
IPD5N25S3430ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8133 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.12 EUR |
10+ | 1.99 EUR |
100+ | 1.34 EUR |
500+ | 1.07 EUR |
1000+ | 0.98 EUR |
PEF20324HV2.2 |
Hersteller: Infineon Technologies
Description: NETWORK INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
Description: NETWORK INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 196.38 EUR |
IMC099TT038XUMA1 |
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Hersteller: Infineon Technologies
Description: IC MOTOR CONTROL TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
Description: IC MOTOR CONTROL TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1093 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.54 EUR |
10+ | 4.09 EUR |
25+ | 3.86 EUR |
100+ | 3.35 EUR |
250+ | 3.18 EUR |
500+ | 2.85 EUR |
1000+ | 2.4 EUR |
TLV4964-5TBXALA1 |
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Hersteller: Infineon Technologies
Description: MAG SWITCH HIGH PRECISION HALL
Features: Temperature Compensated
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
Description: MAG SWITCH HIGH PRECISION HALL
Features: Temperature Compensated
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1142+ | 0.42 EUR |
TLV49644TBXALA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL
Description: MAGNETIC SWITCH HALL
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
TLV49681TBXALA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL
Description: MAGNETIC SWITCH HALL
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
TLV49611TBXALA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TO92
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH TO92
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 1.11 EUR |
19+ | 0.94 EUR |
21+ | 0.88 EUR |
25+ | 0.8 EUR |
50+ | 0.74 EUR |
100+ | 0.69 EUR |
500+ | 0.58 EUR |
1000+ | 0.54 EUR |
TLE4999I3XALA1 |
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Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 7V
Bandwidth: 80Hz, 160Hz, 200Hz, 240Hz, 320Hz, 400Hz, 470Hz, 500Hz, 650Hz, 870Hz, 980Hz, 1.07kHz, 1.27kHz, 1.38kHz
Technology: Hall Effect
Resolution: 13 b
Sensing Range: ±25mT
Current - Output (Max): 30mA
Current - Supply (Max): 14mA
Supplier Device Package: PG-SSO-3-12
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: POSITION&CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 7V
Bandwidth: 80Hz, 160Hz, 200Hz, 240Hz, 320Hz, 400Hz, 470Hz, 500Hz, 650Hz, 870Hz, 980Hz, 1.07kHz, 1.27kHz, 1.38kHz
Technology: Hall Effect
Resolution: 13 b
Sensing Range: ±25mT
Current - Output (Max): 30mA
Current - Supply (Max): 14mA
Supplier Device Package: PG-SSO-3-12
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4999I3XALA1 |
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Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 7V
Bandwidth: 80Hz, 160Hz, 200Hz, 240Hz, 320Hz, 400Hz, 470Hz, 500Hz, 650Hz, 870Hz, 980Hz, 1.07kHz, 1.27kHz, 1.38kHz
Technology: Hall Effect
Resolution: 13 b
Sensing Range: ±25mT
Current - Output (Max): 30mA
Current - Supply (Max): 14mA
Supplier Device Package: PG-SSO-3-12
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: POSITION&CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 7V
Bandwidth: 80Hz, 160Hz, 200Hz, 240Hz, 320Hz, 400Hz, 470Hz, 500Hz, 650Hz, 870Hz, 980Hz, 1.07kHz, 1.27kHz, 1.38kHz
Technology: Hall Effect
Resolution: 13 b
Sensing Range: ±25mT
Current - Output (Max): 30mA
Current - Supply (Max): 14mA
Supplier Device Package: PG-SSO-3-12
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1621 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.32 EUR |
5+ | 6.57 EUR |
10+ | 6.29 EUR |
25+ | 5.96 EUR |
50+ | 5.73 EUR |
100+ | 5.52 EUR |
500+ | 5.12 EUR |
BSM300GA120DN2S2HDLA1 |
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT 1200V AG-62MM
Packaging: Tray
Part Status: Obsolete
Description: POWER MODULE IGBT 1200V AG-62MM
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4254GAXUMA4 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4254GAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4254GAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4254GAXUMA3 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH