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IPDQ60R055CFD7XTMA1 IPDQ60R055CFD7XTMA1 Infineon Technologies Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IPDQ60R045CFD7XTMA1 IPDQ60R045CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
750+6.44 EUR
Mindestbestellmenge: 750
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IPDQ60R035CFD7XTMA1 IPDQ60R035CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
750+9.19 EUR
Mindestbestellmenge: 750
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IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Infineon Technologies Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
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IPP050N10NF2SAKMA1 IPP050N10NF2SAKMA1 Infineon Technologies Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 910 Stücke:
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6+3.40 EUR
50+1.61 EUR
100+1.55 EUR
500+1.53 EUR
Mindestbestellmenge: 6
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DHP1050N10N5AUMA1 DHP1050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP1050N10N5AUMA1 DHP1050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP0050N10N5AUMA1 Infineon Technologies Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174 Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPU60R1K4C6 IPU60R1K4C6 Infineon Technologies INFNS17573-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
1072+0.49 EUR
Mindestbestellmenge: 1072
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IPDD60R145CFD7XTMA1 IPDD60R145CFD7XTMA1 Infineon Technologies Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7 Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1700 Stücke:
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1700+2.37 EUR
Mindestbestellmenge: 1700
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DDB2U60N12W1RFB11BPSA1 DDB2U60N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183 Description: BRIDGE RECT 1P 1.2KV 60A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 ISP14EP15LMXTSA1 Infineon Technologies Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 ISP14EP15LMXTSA1 Infineon Technologies Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
25+0.71 EUR
28+0.63 EUR
100+0.54 EUR
250+0.50 EUR
500+0.47 EUR
Mindestbestellmenge: 17
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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IDK03G65C5XTMA2 IDK03G65C5XTMA2 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
347+1.45 EUR
Mindestbestellmenge: 347
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SLS32AIA010MLUSON10XTMA2 SLS32AIA010MLUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLS32AIA010MLUSON10XTMA2 SLS32AIA010MLUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3982 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.80 EUR
10+2.06 EUR
25+1.87 EUR
100+1.67 EUR
250+1.57 EUR
500+1.51 EUR
1000+1.46 EUR
Mindestbestellmenge: 7
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BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.91 EUR
Mindestbestellmenge: 2
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IPB80N06S4L05ATMA2 Infineon Technologies Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07 Description: MOSFET_)40V,60V)
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA2 IPB80P04P4L06ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.50 EUR
Mindestbestellmenge: 1000
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IPB80P04P4L06ATMA2 IPB80P04P4L06ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.40 EUR
10+2.94 EUR
100+2.02 EUR
500+1.62 EUR
Mindestbestellmenge: 4
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IPP80P03P4L04AKSA2 IPP80P03P4L04AKSA2 Infineon Technologies Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7 Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
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4+5.32 EUR
50+2.75 EUR
100+2.53 EUR
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FS25R12W1T7BOMA1 FS25R12W1T7BOMA1 Infineon Technologies Infineon-FS25R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188efca7334 Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 19 Stücke:
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FS25R12W1T7PB11BPSA1 FS25R12W1T7PB11BPSA1 Infineon Technologies Infineon-FS25R12W1T7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173e165e5d65778 Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
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FP25R12W1T7B3BPSA1 FP25R12W1T7B3BPSA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W1T7BOMA1 FP25R12W1T7BOMA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W2T7BPSA1 FP25R12W2T7BPSA1 Infineon Technologies Infineon-FP25R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742692f69465ca Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 3 Stücke:
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FP25R12W1T7PBPSA1 FP25R12W1T7PBPSA1 Infineon Technologies Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4 Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 15 Stücke:
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1+76.95 EUR
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F475R07W2H3B51BPSA1 Infineon Technologies Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9 Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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1SD418F2FZ1200R33KNPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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XC2336B40F20LAAKXUMA1 XC2336B40F20LAAKXUMA1 Infineon Technologies XC2336B.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
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XC2336B40F80LAAKXUMA1 XC2336B40F80LAAKXUMA1 Infineon Technologies XC2336B.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
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PMB2411FV1.1 Infineon Technologies Description: DUAL BAND RECIEVER
Packaging: Bulk
auf Bestellung 2500 Stücke:
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103+4.53 EUR
Mindestbestellmenge: 103
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PMB7860V1.1E-GICM Infineon Technologies PMB7860.pdf?t.download=true&u=ovmfp3 Description: INFINEON PMB7860V1.1E TELECOM IC
Packaging: Bulk
auf Bestellung 15000 Stücke:
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MB95F118MWPMC-GSE1 MB95F118MWPMC-GSE1 Infineon Technologies 5047 Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
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5+4.21 EUR
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MB95F118MWPMC-GSE1 MB95F118MWPMC-GSE1 Infineon Technologies 5047 Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIGC06T60EX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V 10A WAFER
Produkt ist nicht verfügbar
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FZ1000R16KF4NOSA1 Infineon Technologies Description: IGBT MODULE
Produkt ist nicht verfügbar
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BSC034N10LS5ATMA1 BSC034N10LS5ATMA1 Infineon Technologies Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7 Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 20000 Stücke:
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5000+1.93 EUR
Mindestbestellmenge: 5000
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BSC034N10LS5ATMA1 BSC034N10LS5ATMA1 Infineon Technologies Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7 Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 20532 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
10+3.27 EUR
25+3.09 EUR
100+2.84 EUR
250+2.69 EUR
500+2.59 EUR
1000+2.49 EUR
Mindestbestellmenge: 5
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SAK-TC277TC-64F200N DC SAK-TC277TC-64F200N DC Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALM1IM828ATOBO1 EVALM1IM828ATOBO1 Infineon Technologies Infineon-UG-2020-27-EVAL-M1-IM828-A-UserManual-v01_00-EN.pdf?fileId=5546d4627617cd8301763c2ddc0024c0 Description: EVAL BOARD FOR IM828-XCC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM828-XCC
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 10 Stücke:
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1+308.46 EUR
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TCA505BG2XUMA1 TCA505BG2XUMA1 Infineon Technologies Description: INDUSTRIAL/ACCESSORY IC PG-DSO-1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16
Part Status: Obsolete
Current - Supply: 840 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKD06N60RAATMA2 IKD06N60RAATMA2 Infineon Technologies infineon-ikd06n60ra-ds-v02_01-en.pdf_fileid=db3a30433ee50ba8013eea3563ba14bf.pdf Description: IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
398+1.21 EUR
Mindestbestellmenge: 398
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AIGB30N65H5ATMA1 AIGB30N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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AIKB30N65DF5ATMA1 AIKB30N65DF5ATMA1 Infineon Technologies Infineon-Hybrid%20electric%20and%20electric%20cars%202019-ApplicationBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f427b36a6 Description: IC DISCRETE 650V TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Produkt ist nicht verfügbar
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AIKB30N65DF5ATMA1 AIKB30N65DF5ATMA1 Infineon Technologies Infineon-Hybrid%20electric%20and%20electric%20cars%202019-ApplicationBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f427b36a6 Description: IC DISCRETE 650V TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.27 EUR
10+5.51 EUR
25+5.07 EUR
100+4.59 EUR
250+4.36 EUR
500+4.22 EUR
Mindestbestellmenge: 3
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AIKB30N65DH5ATMA1 AIKB30N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
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1000+3.69 EUR
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AIKB30N65DH5ATMA1 AIKB30N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.64 EUR
10+6.44 EUR
100+4.63 EUR
500+3.85 EUR
Mindestbestellmenge: 2
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IKWH30N65WR6XKSA1 IKWH30N65WR6XKSA1 Infineon Technologies Infineon-IKWH30N65WR6-DataSheet-v01_10-EN.pdf?fileId=5546d46279cccfdb0179ce63911e6fd4 Description: IGBT TRENCH FS 650V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 136 W
auf Bestellung 180 Stücke:
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3+5.95 EUR
30+3.25 EUR
120+2.65 EUR
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IKWH30N65WR5XKSA1 IKWH30N65WR5XKSA1 Infineon Technologies Infineon-IKWH30N65WR5-DataSheet-v01_03-EN.pdf?fileId=5546d46279cccfdb0179e545c5487d86 Description: IGBT TRENCH FS 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/398ns
Switching Energy: 870µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 27Ohm, 15V
Gate Charge: 133 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 190 W
auf Bestellung 148 Stücke:
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4+5.72 EUR
30+3.13 EUR
120+2.56 EUR
Mindestbestellmenge: 4
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IHW30N65R6XKSA1 IHW30N65R6XKSA1 Infineon Technologies Infineon-IHW30N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e1b3677278 Description: IGBT 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 13ns/161ns
Switching Energy: 730µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 163 W
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.95 EUR
30+3.25 EUR
120+2.65 EUR
Mindestbestellmenge: 3
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REFICL5102U100WLCCTOBO1 REFICL5102U100WLCCTOBO1 Infineon Technologies Infineon-engineering_report_reference_design_REF_ICL5102_U100W_LCC-ApplicationNotes-v03_00-EN.pdf?fileId=5546d4627aa5d4f5017b15ef6222605e Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 20V ~ 55V
Voltage - Input: 90 ~ 267 VAC
Contents: Board(s)
Current - Output / Channel: 1.82A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+180.19 EUR
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CYWB0226ABMX-FDXIT CYWB0226ABMX-FDXIT Infineon Technologies CYWB0224,26ABS,ABM.pdf Description: IC WEST BRIDGE HS-USB 81-WLCSP
auf Bestellung 106106 Stücke:
Lieferzeit 10-14 Tag (e)
23+22.11 EUR
Mindestbestellmenge: 23
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CYWB0224ABM-BVXI CYWB0224ABM-BVXI Infineon Technologies CYWB0224%2C26ABS%2CABM.pdf Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
auf Bestellung 1261 Stücke:
Lieferzeit 10-14 Tag (e)
21+23.46 EUR
Mindestbestellmenge: 21
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IPD5N25S3430ATMA1 IPD5N25S3430ATMA1 Infineon Technologies Infineon-IPD5N25S3_430-DS-v01_00-en.pdf?fileId=db3a30433b92f0e8013b9379d03b0148 Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.88 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
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IPD5N25S3430ATMA1 IPD5N25S3430ATMA1 Infineon Technologies Infineon-IPD5N25S3_430-DS-v01_00-en.pdf?fileId=db3a30433b92f0e8013b9379d03b0148 Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8133 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.12 EUR
10+1.99 EUR
100+1.34 EUR
500+1.07 EUR
1000+0.98 EUR
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PEF20324HV2.2 Infineon Technologies Description: NETWORK INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
3+196.38 EUR
Mindestbestellmenge: 3
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IMC099TT038XUMA1 IMC099TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR CONTROL TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1093 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.54 EUR
10+4.09 EUR
25+3.86 EUR
100+3.35 EUR
250+3.18 EUR
500+2.85 EUR
1000+2.40 EUR
Mindestbestellmenge: 4
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IPDQ60R055CFD7XTMA1
IPDQ60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IPDQ60R045CFD7XTMA1 Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd
IPDQ60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+6.44 EUR
Mindestbestellmenge: 750
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IPDQ60R035CFD7XTMA1 Infineon-IPDQ60R035CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d30184656b09ef091c
IPDQ60R035CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+9.19 EUR
Mindestbestellmenge: 750
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IPDQ60R022S7XTMA1 Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518
IPDQ60R022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Produkt ist nicht verfügbar
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IPP050N10NF2SAKMA1 Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008
IPP050N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.40 EUR
50+1.61 EUR
100+1.55 EUR
500+1.53 EUR
Mindestbestellmenge: 6
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DHP1050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
DHP1050N10N5AUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
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DHP1050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
DHP1050N10N5AUMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DHP0050N10N5AUMA1 Infineon-DHPX050N10N5_Datasheet-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b2bf3e3db0174
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPU60R1K4C6 INFNS17573-1.pdf?t.download=true&u=5oefqw
IPU60R1K4C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1072+0.49 EUR
Mindestbestellmenge: 1072
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IPDD60R145CFD7XTMA1 Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7
IPDD60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1700+2.37 EUR
Mindestbestellmenge: 1700
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DDB2U60N12W1RFB11BPSA1 Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183
DDB2U60N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 1.2KV 60A EASY1B1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
ISP14EP15LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Produkt ist nicht verfügbar
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ISP14EP15LMXTSA1 Infineon-ISP14EP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bdf12458d1c4b
ISP14EP15LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.71 EUR
28+0.63 EUR
100+0.54 EUR
250+0.50 EUR
500+0.47 EUR
Mindestbestellmenge: 17
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IPB100N06S2L05ATMA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t
IPB100N06S2L05ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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IDK03G65C5XTMA2 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
347+1.45 EUR
Mindestbestellmenge: 347
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SLS32AIA010MLUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MLUSON10XTMA2
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLS32AIA010MLUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MLUSON10XTMA2
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M V3 HIGH TEMP
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.80 EUR
10+2.06 EUR
25+1.87 EUR
100+1.67 EUR
250+1.57 EUR
500+1.51 EUR
1000+1.46 EUR
Mindestbestellmenge: 7
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BTS244ZE3062AATMA2 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTS244ZE3062AATMA2 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 35A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.91 EUR
Mindestbestellmenge: 2
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IPB80N06S4L05ATMA2 Infineon-I80N06S4L_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038e65fed0d07
Hersteller: Infineon Technologies
Description: MOSFET_)40V,60V)
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA2 Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.50 EUR
Mindestbestellmenge: 1000
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IPB80P04P4L06ATMA2 Infineon-IPP_B_I80P04P4L-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.40 EUR
10+2.94 EUR
100+2.02 EUR
500+1.62 EUR
Mindestbestellmenge: 4
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IPP80P03P4L04AKSA2 Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7
IPP80P03P4L04AKSA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
50+2.75 EUR
100+2.53 EUR
Mindestbestellmenge: 4
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FS25R12W1T7BOMA1 Infineon-FS25R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188efca7334
FS25R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.12 EUR
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FS25R12W1T7PB11BPSA1 Infineon-FS25R12W1T7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173e165e5d65778
FS25R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.56 EUR
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FP25R12W1T7B3BPSA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7B3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W1T7BOMA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12W2T7BPSA1 Infineon-FP25R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742692f69465ca
FP25R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.28 EUR
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FP25R12W1T7PBPSA1 Infineon-FP25R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f017426870cd665c4
FP25R12W1T7PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.95 EUR
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F475R07W2H3B51BPSA1 Infineon-F4-75R07W2H3_B51-DS-v02_00-EN.pdf?fileId=5546d4624933b87501497522b7240cf9
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 37.5A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Produkt ist nicht verfügbar
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1SD418F2FZ1200R33KNPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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XC2336B40F20LAAKXUMA1 XC2336B.pdf
XC2336B40F20LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
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XC2336B40F80LAAKXUMA1 XC2336B.pdf
XC2336B40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Produkt ist nicht verfügbar
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PMB2411FV1.1
Hersteller: Infineon Technologies
Description: DUAL BAND RECIEVER
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
103+4.53 EUR
Mindestbestellmenge: 103
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PMB7860V1.1E-GICM PMB7860.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: INFINEON PMB7860V1.1E TELECOM IC
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+8.35 EUR
Mindestbestellmenge: 59
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MB95F118MWPMC-GSE1 5047
MB95F118MWPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
Mindestbestellmenge: 5
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MB95F118MWPMC-GSE1 5047
MB95F118MWPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIGC06T60EX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 10A WAFER
Produkt ist nicht verfügbar
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FZ1000R16KF4NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Produkt ist nicht verfügbar
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BSC034N10LS5ATMA1 Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7
BSC034N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.93 EUR
Mindestbestellmenge: 5000
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BSC034N10LS5ATMA1 Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7
BSC034N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
auf Bestellung 20532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+3.27 EUR
25+3.09 EUR
100+2.84 EUR
250+2.69 EUR
500+2.59 EUR
1000+2.49 EUR
Mindestbestellmenge: 5
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SAK-TC277TC-64F200N DC Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
SAK-TC277TC-64F200N DC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALM1IM828ATOBO1 Infineon-UG-2020-27-EVAL-M1-IM828-A-UserManual-v01_00-EN.pdf?fileId=5546d4627617cd8301763c2ddc0024c0
EVALM1IM828ATOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM828-XCC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM828-XCC
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+308.46 EUR
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TCA505BG2XUMA1
TCA505BG2XUMA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL/ACCESSORY IC PG-DSO-1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16
Part Status: Obsolete
Current - Supply: 840 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKD06N60RAATMA2 infineon-ikd06n60ra-ds-v02_01-en.pdf_fileid=db3a30433ee50ba8013eea3563ba14bf.pdf
IKD06N60RAATMA2
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
398+1.21 EUR
Mindestbestellmenge: 398
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AIGB30N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB30N65H5ATMA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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AIKB30N65DF5ATMA1 Infineon-Hybrid%20electric%20and%20electric%20cars%202019-ApplicationBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f427b36a6
AIKB30N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 650V TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
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AIKB30N65DF5ATMA1 Infineon-Hybrid%20electric%20and%20electric%20cars%202019-ApplicationBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f427b36a6
AIKB30N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 650V TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/188ns
Switching Energy: 330µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 1683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+5.51 EUR
25+5.07 EUR
100+4.59 EUR
250+4.36 EUR
500+4.22 EUR
Mindestbestellmenge: 3
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AIKB30N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB30N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.69 EUR
Mindestbestellmenge: 1000
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AIKB30N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB30N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.64 EUR
10+6.44 EUR
100+4.63 EUR
500+3.85 EUR
Mindestbestellmenge: 2
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IKWH30N65WR6XKSA1 Infineon-IKWH30N65WR6-DataSheet-v01_10-EN.pdf?fileId=5546d46279cccfdb0179ce63911e6fd4
IKWH30N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 136 W
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
30+3.25 EUR
120+2.65 EUR
Mindestbestellmenge: 3
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IKWH30N65WR5XKSA1 Infineon-IKWH30N65WR5-DataSheet-v01_03-EN.pdf?fileId=5546d46279cccfdb0179e545c5487d86
IKWH30N65WR5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/398ns
Switching Energy: 870µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 27Ohm, 15V
Gate Charge: 133 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 190 W
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.72 EUR
30+3.13 EUR
120+2.56 EUR
Mindestbestellmenge: 4
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IHW30N65R6XKSA1 Infineon-IHW30N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e1b3677278
IHW30N65R6XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 13ns/161ns
Switching Energy: 730µJ (on), 260µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 163 W
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
30+3.25 EUR
120+2.65 EUR
Mindestbestellmenge: 3
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REFICL5102U100WLCCTOBO1 Infineon-engineering_report_reference_design_REF_ICL5102_U100W_LCC-ApplicationNotes-v03_00-EN.pdf?fileId=5546d4627aa5d4f5017b15ef6222605e
REFICL5102U100WLCCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 20V ~ 55V
Voltage - Input: 90 ~ 267 VAC
Contents: Board(s)
Current - Output / Channel: 1.82A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+180.19 EUR
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CYWB0226ABMX-FDXIT CYWB0224,26ABS,ABM.pdf
CYWB0226ABMX-FDXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
auf Bestellung 106106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+22.11 EUR
Mindestbestellmenge: 23
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CYWB0224ABM-BVXI CYWB0224%2C26ABS%2CABM.pdf
CYWB0224ABM-BVXI
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
auf Bestellung 1261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+23.46 EUR
Mindestbestellmenge: 21
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IPD5N25S3430ATMA1 Infineon-IPD5N25S3_430-DS-v01_00-en.pdf?fileId=db3a30433b92f0e8013b9379d03b0148
IPD5N25S3430ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.88 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
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IPD5N25S3430ATMA1 Infineon-IPD5N25S3_430-DS-v01_00-en.pdf?fileId=db3a30433b92f0e8013b9379d03b0148
IPD5N25S3430ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+1.99 EUR
100+1.34 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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PEF20324HV2.2
Hersteller: Infineon Technologies
Description: NETWORK INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+196.38 EUR
Mindestbestellmenge: 3
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IMC099TT038XUMA1 Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC099TT038XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR CONTROL TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+4.09 EUR
25+3.86 EUR
100+3.35 EUR
250+3.18 EUR
500+2.85 EUR
1000+2.40 EUR
Mindestbestellmenge: 4
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