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IAUA180N08S5N026AUMA1 IAUA180N08S5N026AUMA1 Infineon Technologies Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CYV15G0104TRB-BGXC CYV15G0104TRB-BGXC Infineon Technologies download Description: IC SERDES HOTLINK 256LBGA
Packaging: Bulk
Package / Case: 256-BGA Exposed Pad
Output Type: PECL
Mounting Type: Surface Mount
Number of Outputs: 1/10
Function: Serializer/Deserializer
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Data Rate: 1.485Gbps
Input Type: PECL
Number of Inputs: 10/1
Supplier Device Package: 256-L2BGA (27x27)
Grade: Automotive
Qualification: AEC-Q100
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CY7C1347G-166AXC CY7C1347G-166AXC Infineon Technologies Infineon-CY7C1347G_4_MBIT_(128K_X_36)_PIPELINED_SYNC_SRAM-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd1d7d2f3a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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IRSM515-025PATRAUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 1.5A SOP23
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm LS, 3Ohm HS
Applications: AC Motors
Current - Output / Channel: 1.5A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 400V (Max)
Supplier Device Package: PG-DIP-23-901/SOP 29x12F
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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FF1000R17IE4S2BOSA1 Infineon Technologies Description: FF1000R17 - IGBT MODULE
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FF100R12MT4 Infineon Technologies INFNS13274-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
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OUTOFSHAFTFOR3D2GOTOBO1 OUTOFSHAFTFOR3D2GOTOBO1 Infineon Technologies OUTOFSHAFTFOR3D2GOTOBO1_Web.pdf Description: OUT OF SHAFT FOR 3D 2 GO
Packaging: Box
For Use With/Related Products: Sensor2Go
Accessory Type: Mounting Kit
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IPP080N03L G IPP080N03L G Infineon Technologies IPB%2CIPP080N03LG.pdf Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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TT21401-44LQI28T Infineon Technologies Description: IC MCU 32BIT 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT21401-44LQI33T Infineon Technologies Description: IC MCU 32BIT 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 33
DigiKey Programmable: Not Verified
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TT21401-44LQI35T Infineon Technologies Description: IC MCU 32BIT 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 35
DigiKey Programmable: Not Verified
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TT21401-48LQI36T Infineon Technologies Description: IC MCU 32BIT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 48-QFN (6x6)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT21401-56LQI40T Infineon Technologies Description: IC MCU 32BIT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MA12070P1XUMA1 Infineon Technologies Infineon-MA12070P-DataSheet-v01_01-EN.pdf?fileId=5546d46264a8de7e0164b761f2f261e4 Description: AUDIO IC PG-VQFN-64
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 4V ~ 26V
Max Output Power x Channels @ Load: 30W x 2 @ 8Ohm
Supplier Device Package: 64-QFN-EP (9x9)
Part Status: Not For New Designs
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IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPP45N06S409AKSA2 IPP45N06S409AKSA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DDB6U180N16RRB37BPSA1 DDB6U180N16RRB37BPSA1 Infineon Technologies Infineon-DDB6U180N16RR_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d82a2255c53c2 Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
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DDB6U180N16RRB11BPSA2 DDB6U180N16RRB11BPSA2 Infineon Technologies Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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XMC1302T038X0064ABXUMA1 XMC1302T038X0064ABXUMA1 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC14S2Q040X0064AAXUMA1 XMC14S2Q040X0064AAXUMA1 Infineon Technologies Description: 32-BIT INDUSTRIAL MICROCONTROLLE
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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FS650R08A4P2BPSA1 FS650R08A4P2BPSA1 Infineon Technologies Infineon-FS650R08A4P2-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a017351f435eb5977 Description: HYBRID PACK 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBDC6I-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 50 V
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FF600R12IP4PBPSA1 FF600R12IP4PBPSA1 Infineon Technologies Infineon-FF600R12IP4P-DataSheet-v03_00-EN.pdf?fileId=5546d4627762291e01776c32fc0a79f9 Description: PP IHM I XHP 1 7KV AG-PRIME2-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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IRLR3915 Infineon Technologies Description: IRLR3915
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IPW60R0706P Infineon Technologies Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FP150R12N3T7B16BPSA1 FP150R12N3T7B16BPSA1 Infineon Technologies Infineon-FP150R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ae316147137 Description: LOW POWER ECONO AG-ECONO3B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
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FS500R17OE4DB81BPSA1 FS500R17OE4DB81BPSA1 Infineon Technologies Infineon-FS500R17OE4D_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a7dd36c84 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Produkt ist nicht verfügbar
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BC846UE6727HTSA1 BC846UE6727HTSA1 Infineon Technologies INFNS17743-1.pdf?t.download=true&u=5oefqw Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5392+0.1 EUR
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BGAV1A10E6327XTSA1 BGAV1A10E6327XTSA1 Infineon Technologies Infineon-BGAV1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926ac2014ba7 Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
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S25FL032P0XNFV013M S25FL032P0XNFV013M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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S25FL032P0XNFV003M S25FL032P0XNFV003M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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IR3820AMTRPBF IR3820AMTRPBF Infineon Technologies IR3820AMPBF.pdf Description: IC REG BUCK ADJ 14A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.77 EUR
10+4.9 EUR
25+4.59 EUR
100+4.16 EUR
250+3.9 EUR
500+3.72 EUR
1000+3.54 EUR
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BSZ146N10LS5ATMA1 BSZ146N10LS5ATMA1 Infineon Technologies infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Description: MOSFET N-CH 100V 44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 10054 Stücke:
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10+1.8 EUR
13+1.36 EUR
100+1.16 EUR
500+0.99 EUR
1000+0.92 EUR
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TLE9202EDXUMA1 TLE9202EDXUMA1 Infineon Technologies Infineon-TLE9202ED-DS-v01_00-EN.pdf?fileId=5546d462580663ef01583e8508e71921 Description: IC HALF BRIDGE DRVR 6A DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5109A16DE2210XUMA1 TLE5109A16DE2210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC ANGLE SENSOR 5.0 V
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 123952 Stücke:
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81+5.6 EUR
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FS820R08A6P2LMBPSA1 Infineon Technologies Description: IGBT MODULE 820A HYBRID PK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 820 A
Produkt ist nicht verfügbar
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PEB4265-2VV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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S25FL116K0XMFN043 S25FL116K0XMFN043 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Infineon Technologies Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010 Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Produkt ist nicht verfügbar
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ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Infineon Technologies Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010 Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
auf Bestellung 1355 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
14+1.3 EUR
100+0.87 EUR
500+0.76 EUR
1000+0.74 EUR
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ISC058N04NM5ATMA1 ISC058N04NM5ATMA1 Infineon Technologies Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
auf Bestellung 15000 Stücke:
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5000+0.41 EUR
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ISC058N04NM5ATMA1 ISC058N04NM5ATMA1 Infineon Technologies Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
auf Bestellung 21403 Stücke:
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10+1.88 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.54 EUR
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F3L300R12MT4B22BOSA1 F3L300R12MT4B22BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496 Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 753 Stücke:
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2+357.75 EUR
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PEF 2055 N V2.1 PEF 2055 N V2.1 Infineon Technologies PEB205x%2C%20PEF205x.pdf Description: IC TELECOM INTERFACE 44LCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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PEF 2054 N V2.1 PEF 2054 N V2.1 Infineon Technologies PEB205x%2C%20PEF205x.pdf Description: IC TELECOM INTERFACE 44LCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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IR3585BMSY02TRP Infineon Technologies Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQE050N08NM5CGATMA1 IQE050N08NM5CGATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 5000 Stücke:
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5000+1.93 EUR
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IQE050N08NM5CGATMA1 IQE050N08NM5CGATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 9687 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.77 EUR
10+3.76 EUR
100+2.63 EUR
500+2.14 EUR
1000+1.99 EUR
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IQE030N06NM5CGATMA1 IQE030N06NM5CGATMA1 Infineon Technologies Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Produkt ist nicht verfügbar
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IQE030N06NM5CGATMA1 IQE030N06NM5CGATMA1 Infineon Technologies Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 100 Stücke:
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4+4.63 EUR
10+3.41 EUR
100+2.4 EUR
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IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766 Description: IGBT 600V 5.7A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
Produkt ist nicht verfügbar
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IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766 Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.37 EUR
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IKN01N60RC2ATMA1 IKN01N60RC2ATMA1 Infineon Technologies Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763 Description: IGBT 600V 2.2A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
Produkt ist nicht verfügbar
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IKN01N60RC2ATMA1 IKN01N60RC2ATMA1 Infineon Technologies Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763 Description: IGBT 600V 2.2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
26+0.69 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
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PEB3081HV1.4 PEB3081HV1.4 Infineon Technologies INFNS04966-1.pdf?t.download=true&u=5oefqw Description: SBCX-X S/T BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of Circuits: 1
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IPA60R600P7 IPA60R600P7 Infineon Technologies Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f Description: POWER FIELD-EFFECT TRANSISTOR, 6
Produkt ist nicht verfügbar
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IPA60R280P6 IPA60R280P6 Infineon Technologies INFNS28761-1.pdf?t.download=true&u=5oefqw Description: 600V, N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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B161OLMHAXP B161OLMHAXP Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
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40+12.58 EUR
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SAF-C161K-LM3VHA Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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26+20.91 EUR
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C161KLMHABXQ C161KLMHABXQ Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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37+14.47 EUR
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IAUA180N08S5N026AUMA1 Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35
IAUA180N08S5N026AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CYV15G0104TRB-BGXC download
CYV15G0104TRB-BGXC
Hersteller: Infineon Technologies
Description: IC SERDES HOTLINK 256LBGA
Packaging: Bulk
Package / Case: 256-BGA Exposed Pad
Output Type: PECL
Mounting Type: Surface Mount
Number of Outputs: 1/10
Function: Serializer/Deserializer
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Data Rate: 1.485Gbps
Input Type: PECL
Number of Inputs: 10/1
Supplier Device Package: 256-L2BGA (27x27)
Grade: Automotive
Qualification: AEC-Q100
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3+242.11 EUR
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CY7C1347G-166AXC Infineon-CY7C1347G_4_MBIT_(128K_X_36)_PIPELINED_SYNC_SRAM-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd1d7d2f3a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1347G-166AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 3317 Stücke:
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Anzahl Preis
50+10.22 EUR
Mindestbestellmenge: 50
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IRSM515-025PATRAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.5A SOP23
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm LS, 3Ohm HS
Applications: AC Motors
Current - Output / Channel: 1.5A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 400V (Max)
Supplier Device Package: PG-DIP-23-901/SOP 29x12F
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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FF1000R17IE4S2BOSA1
Hersteller: Infineon Technologies
Description: FF1000R17 - IGBT MODULE
auf Bestellung 87 Stücke:
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FF100R12MT4 INFNS13274-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
auf Bestellung 27 Stücke:
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OUTOFSHAFTFOR3D2GOTOBO1 OUTOFSHAFTFOR3D2GOTOBO1_Web.pdf
OUTOFSHAFTFOR3D2GOTOBO1
Hersteller: Infineon Technologies
Description: OUT OF SHAFT FOR 3D 2 GO
Packaging: Box
For Use With/Related Products: Sensor2Go
Accessory Type: Mounting Kit
auf Bestellung 3 Stücke:
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Anzahl Preis
1+48.38 EUR
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IPP080N03L G IPB%2CIPP080N03LG.pdf
IPP080N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Produkt ist nicht verfügbar
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TT21401-44LQI28T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT21401-44LQI33T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT21401-44LQI35T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 44QFN
Packaging: Tape & Reel (TR)
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 44-QFN (5x5)
Part Status: Obsolete
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT21401-48LQI36T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 48-QFN (6x6)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TT21401-56LQI40T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 500kHz
Core Processor: ARM® Cortex®
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, SPI
Supplier Device Package: 56-QFN (6x6)
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MA12070P1XUMA1 Infineon-MA12070P-DataSheet-v01_01-EN.pdf?fileId=5546d46264a8de7e0164b761f2f261e4
Hersteller: Infineon Technologies
Description: AUDIO IC PG-VQFN-64
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 4V ~ 26V
Max Output Power x Channels @ Load: 30W x 2 @ 8Ohm
Supplier Device Package: 64-QFN-EP (9x9)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
IPD60R1K0CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
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IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPP45N06S409AKSA2 IPx45N06S4-09.pdf
IPP45N06S409AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DDB6U180N16RRB37BPSA1 Infineon-DDB6U180N16RR_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d82a2255c53c2
DDB6U180N16RRB37BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
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DDB6U180N16RRB11BPSA2 Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc
DDB6U180N16RRB11BPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+195.13 EUR
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XMC1302T038X0064ABXUMA1
XMC1302T038X0064ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.24 EUR
Mindestbestellmenge: 3000
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XMC14S2Q040X0064AAXUMA1
XMC14S2Q040X0064AAXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+16.46 EUR
Mindestbestellmenge: 30
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FS650R08A4P2BPSA1 Infineon-FS650R08A4P2-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a017351f435eb5977
FS650R08A4P2BPSA1
Hersteller: Infineon Technologies
Description: HYBRID PACK 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBDC6I-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 50 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+566.19 EUR
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FF600R12IP4PBPSA1 Infineon-FF600R12IP4P-DataSheet-v03_00-EN.pdf?fileId=5546d4627762291e01776c32fc0a79f9
FF600R12IP4PBPSA1
Hersteller: Infineon Technologies
Description: PP IHM I XHP 1 7KV AG-PRIME2-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+514.66 EUR
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IRLR3915
Hersteller: Infineon Technologies
Description: IRLR3915
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
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IPW60R0706P Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e
Hersteller: Infineon Technologies
Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FP150R12N3T7B16BPSA1 Infineon-FP150R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ae316147137
FP150R12N3T7B16BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+288.55 EUR
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FS500R17OE4DB81BPSA1 Infineon-FS500R17OE4D_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a7dd36c84
FS500R17OE4DB81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Produkt ist nicht verfügbar
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BC846UE6727HTSA1 INFNS17743-1.pdf?t.download=true&u=5oefqw
BC846UE6727HTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 622496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5392+0.1 EUR
Mindestbestellmenge: 5392
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BGAV1A10E6327XTSA1 Infineon-BGAV1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926ac2014ba7
BGAV1A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
717+0.71 EUR
Mindestbestellmenge: 717
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S25FL032P0XNFV013M
S25FL032P0XNFV013M
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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S25FL032P0XNFV003M
S25FL032P0XNFV003M
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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IR3820AMTRPBF IR3820AMPBF.pdf
IR3820AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+4.9 EUR
25+4.59 EUR
100+4.16 EUR
250+3.9 EUR
500+3.72 EUR
1000+3.54 EUR
Mindestbestellmenge: 4
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BSZ146N10LS5ATMA1 infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
BSZ146N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 10054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
13+1.36 EUR
100+1.16 EUR
500+0.99 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
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TLE9202EDXUMA1 Infineon-TLE9202ED-DS-v01_00-EN.pdf?fileId=5546d462580663ef01583e8508e71921
TLE9202EDXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 6A DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5109A16DE2210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5109A16DE2210XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 123952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
81+5.6 EUR
Mindestbestellmenge: 81
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FS820R08A6P2LMBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 820A HYBRID PK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 820 A
Produkt ist nicht verfügbar
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PEB4265-2VV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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S25FL116K0XMFN043 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFN043
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC046N04NM5ATMA1 Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010
ISC046N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Produkt ist nicht verfügbar
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ISC046N04NM5ATMA1 Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010
ISC046N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
auf Bestellung 1355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
14+1.3 EUR
100+0.87 EUR
500+0.76 EUR
1000+0.74 EUR
Mindestbestellmenge: 10
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
ISC058N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.41 EUR
Mindestbestellmenge: 5000
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
ISC058N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
auf Bestellung 21403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.54 EUR
2000+0.51 EUR
Mindestbestellmenge: 10
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F3L300R12MT4B22BOSA1 Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496
F3L300R12MT4B22BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+357.75 EUR
Mindestbestellmenge: 2
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PEF 2055 N V2.1 PEB205x%2C%20PEF205x.pdf
PEF 2055 N V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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PEF 2054 N V2.1 PEB205x%2C%20PEF205x.pdf
PEF 2054 N V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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IR3585BMSY02TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQE050N08NM5CGATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.93 EUR
Mindestbestellmenge: 5000
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IQE050N08NM5CGATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 9687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+3.76 EUR
100+2.63 EUR
500+2.14 EUR
1000+1.99 EUR
2000+1.93 EUR
Mindestbestellmenge: 4
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IQE030N06NM5CGATMA1 Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee
IQE030N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE030N06NM5CGATMA1 Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee
IQE030N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.41 EUR
100+2.4 EUR
Mindestbestellmenge: 4
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IKN03N60RC2ATMA1 Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
Produkt ist nicht verfügbar
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IKN03N60RC2ATMA1 Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
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IKN01N60RC2ATMA1 Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763
IKN01N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 2.2A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
Produkt ist nicht verfügbar
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IKN01N60RC2ATMA1 Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763
IKN01N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 2.2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.69 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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PEB3081HV1.4 INFNS04966-1.pdf?t.download=true&u=5oefqw
PEB3081HV1.4
Hersteller: Infineon Technologies
Description: SBCX-X S/T BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of Circuits: 1
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+22.18 EUR
Mindestbestellmenge: 22
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IPA60R600P7 Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f
IPA60R600P7
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Produkt ist nicht verfügbar
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IPA60R280P6 INFNS28761-1.pdf?t.download=true&u=5oefqw
IPA60R280P6
Hersteller: Infineon Technologies
Description: 600V, N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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B161OLMHAXP INFNS01615-1.pdf?t.download=true&u=5oefqw
B161OLMHAXP
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+12.58 EUR
Mindestbestellmenge: 40
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SAF-C161K-LM3VHA INFNS01615-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+20.91 EUR
Mindestbestellmenge: 26
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C161KLMHABXQ INFNS11060-1.pdf?t.download=true&u=5oefqw
C161KLMHABXQ
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
37+14.47 EUR
Mindestbestellmenge: 37
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