Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149775) > Seite 441 nach 2497

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 436 437 438 439 440 441 442 443 444 445 446 498 747 996 1245 1494 1743 1992 2241 2490 2497  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CY4521 CY4521 Infineon Technologies Infineon-CY4521_EZ-PD_CCG2_Evaluation_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eff22b015fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+100.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4255DTRPBF/BKN Infineon Technologies Description: IRFH4255DTRPBF/BKN
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM4231TRPBF/BKN Infineon Technologies Description: IRFHM4231TRPBF/BKN
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BAS 16-02W E6327 BAS 16-02W E6327 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98 Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
465+0.98 EUR
Mindestbestellmenge: 465
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R145CFD7AAKSA1 IPP65R145CFD7AAKSA1 Infineon Technologies Infineon-IPP65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627a0b0c7b017a340e9235098f Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD08G65C6XTMA1 IDDD08G65C6XTMA1 Infineon Technologies Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD08G65C6XTMA1 IDDD08G65C6XTMA1 Infineon Technologies Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.35 EUR
10+4.15 EUR
100+2.92 EUR
500+2.59 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IDDD20G65C6XTMA1 IDDD20G65C6XTMA1 Infineon Technologies Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD20G65C6XTMA1 IDDD20G65C6XTMA1 Infineon Technologies Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.16 EUR
10+8.35 EUR
100+6.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+2.65 EUR
100+1.92 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GP11FAIR23 S70GL02GP11FAIR23 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P2000D45X168HPSA1 Infineon Technologies Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR430UXTSA2 BCR430UXTSA2 Infineon Technologies Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 23212 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+0.39 EUR
51+0.35 EUR
100+0.3 EUR
250+0.28 EUR
500+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPB50N10S3L16ATMA1 IPB50N10S3L16ATMA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB50N10S3L16ATMA1 IPB50N10S3L16ATMA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N10S436AATMA1 IPG20N10S436AATMA1 Infineon Technologies PdfFile_211447.pdf Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.77 EUR
10000+0.76 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSSCATMA1 BSC016N06NSSCATMA1 Infineon Technologies Infineon-BSC016N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d46274b9648d0174c1fd04fb336c Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGM7LLHM4L12E6327XTSA1 Infineon Technologies LTE_Low_Noise_Amplifiers_Br.pdf Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
auf Bestellung 682500 Stücke:
Lieferzeit 10-14 Tag (e)
211+2.31 EUR
Mindestbestellmenge: 211
Im Einkaufswagen  Stück im Wert von  UAH
IPB47N10S33ATMA1 IPB47N10S33ATMA1 Infineon Technologies IPx47N10S-33.pdf Description: MOSFET N-CH 100V 47A TO263-3
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
311+1.62 EUR
Mindestbestellmenge: 311
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR1010Z AUIRFR1010Z Infineon Technologies IRSDS11928-1.pdf?t.download=true&u=5oefqw Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PXE1110ADM-G001 Infineon Technologies Description: IC CONTROLLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04P10PGBTMA1 SPD04P10PGBTMA1 Infineon Technologies SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8 Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04P10PGBTMA1 SPD04P10PGBTMA1 Infineon Technologies SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8 Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACCESSORY33234NOSA1 Infineon Technologies Description: ACCESSORY IGBT MODULEE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS20R06XL4BOMA1 Infineon Technologies Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAKXC2286M104F80LAA SAKXC2286M104F80LAA Infineon Technologies INFNS14276-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAK-XC2287M-72F80L AA SAK-XC2287M-72F80L AA Infineon Technologies XC228xM.pdf Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE8082ESXUMA1 TLE8082ESXUMA1 Infineon Technologies Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02 Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.98 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLE8082ESXUMA1 TLE8082ESXUMA1 Infineon Technologies Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02 Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 23999 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.81 EUR
10+5.94 EUR
25+5.47 EUR
100+4.96 EUR
250+4.71 EUR
500+4.57 EUR
1000+4.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE8088EMXUMA1 TLE8088EMXUMA1 Infineon Technologies Infineon-TLE8088EM-DS-v01_00-en.pdf?fileId=db3a30433a047ba0013a446e76be0bbb Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
4+5 EUR
10+4.48 EUR
25+4.24 EUR
100+3.67 EUR
250+3.48 EUR
500+3.12 EUR
1000+2.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SAK-XC2269I136F128LRAAKXUMA1 SAK-XC2269I136F128LRAAKXUMA1 Infineon Technologies Infineon-SAK-XC2269I-136F128LR%20AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e7537dfe4199 Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAK-XC2220U-4F40VAA SAK-XC2220U-4F40VAA Infineon Technologies INFNS16681-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92104131QXXUMA1 TLE92104131QXXUMA1 Infineon Technologies Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962 Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92104131QXXUMA1 TLE92104131QXXUMA1 Infineon Technologies Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962 Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE9872QXA40XUMA1 Infineon Technologies Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+6.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE9862QXA40XUMA1 Infineon Technologies Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92104232QXXUMA1 TLE92104232QXXUMA1 Infineon Technologies Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976 Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.75 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXV33XUMA1 TLE9185QXV33XUMA1 Infineon Technologies Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.12 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXV33XUMA1 TLE9185QXV33XUMA1 Infineon Technologies Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
auf Bestellung 9050 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.3 EUR
10+4.75 EUR
25+4.36 EUR
100+3.94 EUR
250+3.74 EUR
500+3.61 EUR
1000+3.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXXUMA1 Infineon Technologies Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXXUMA1 Infineon Technologies Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.85 EUR
10+5.01 EUR
25+4.54 EUR
100+4.03 EUR
250+3.79 EUR
500+3.65 EUR
1000+3.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
6EDL7141XUMA1 6EDL7141XUMA1 Infineon Technologies Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6EDL7141XUMA1 6EDL7141XUMA1 Infineon Technologies Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.7 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.72 EUR
500+2.63 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BGA7P320E6327XTSA1 BGA7P320E6327XTSA1 Infineon Technologies Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423 Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS23N20DTRRP IRFS23N20DTRRP Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC240N12NS3G BSC240N12NS3G Infineon Technologies INFNS15757-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC81D60E6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC81D120F6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U100N16RRBPSA1 DDB6U100N16RRBPSA1 Infineon Technologies Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F411MR12W2M1B76BOMA1 F411MR12W2M1B76BOMA1 Infineon Technologies Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGT40R070D1ATMA1 Infineon Technologies Infineon-IGT40R070D1-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aa91bc8810c5c Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IST007N04NM6AUMA1 IST007N04NM6AUMA1 Infineon Technologies Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.81 EUR
10+4.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
REFICL8810LED43WBMTOBO1 REFICL8810LED43WBMTOBO1 Infineon Technologies Description: ICL8810 REF BOARD 43W BM
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+91.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R900P7ATMA1 IPLK70R900P7ATMA1 Infineon Technologies Infineon-IPLK70R900P7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce0bd2c1b2d5f Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N06S403ATMA2 IPD100N06S403ATMA2 Infineon Technologies INFNS14378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.43 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CYW4329HKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY4521 Infineon-CY4521_EZ-PD_CCG2_Evaluation_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eff22b015fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4521
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4255DTRPBF/BKN
Hersteller: Infineon Technologies
Description: IRFH4255DTRPBF/BKN
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM4231TRPBF/BKN
Hersteller: Infineon Technologies
Description: IRFHM4231TRPBF/BKN
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BAS 16-02W E6327 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS 16-02W E6327
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS65R400CEAKMA1 Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98
IPS65R400CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
465+0.98 EUR
Mindestbestellmenge: 465
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R145CFD7AAKSA1 Infineon-IPP65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627a0b0c7b017a340e9235098f
IPP65R145CFD7AAKSA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD08G65C6XTMA1 Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b
IDDD08G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD08G65C6XTMA1 Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b
IDDD08G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.35 EUR
10+4.15 EUR
100+2.92 EUR
500+2.59 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IDDD20G65C6XTMA1 Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e
IDDD20G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD20G65C6XTMA1 Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e
IDDD20G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.16 EUR
10+8.35 EUR
100+6.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+2.65 EUR
100+1.92 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GP11FAIR23 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR23
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P2000D45X168HPSA1
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
BCR430UXTSA2
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 23212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
51+0.35 EUR
100+0.3 EUR
250+0.28 EUR
500+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPB50N10S3L16ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPB50N10S3L16ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N10S436AATMA1 PdfFile_211447.pdf
IPG20N10S436AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.77 EUR
10000+0.76 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSSCATMA1 Infineon-BSC016N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d46274b9648d0174c1fd04fb336c
BSC016N06NSSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGM7LLHM4L12E6327XTSA1 LTE_Low_Noise_Amplifiers_Br.pdf
Hersteller: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
auf Bestellung 682500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
211+2.31 EUR
Mindestbestellmenge: 211
Im Einkaufswagen  Stück im Wert von  UAH
IPB47N10S33ATMA1 IPx47N10S-33.pdf
IPB47N10S33ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
311+1.62 EUR
Mindestbestellmenge: 311
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR1010Z IRSDS11928-1.pdf?t.download=true&u=5oefqw
AUIRFR1010Z
Hersteller: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PXE1110ADM-G001
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04P10PGBTMA1 SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8
SPD04P10PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04P10PGBTMA1 SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8
SPD04P10PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACCESSORY33234NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS20R06XL4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAKXC2286M104F80LAA INFNS14276-1.pdf?t.download=true&u=5oefqw
SAKXC2286M104F80LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAK-XC2287M-72F80L AA XC228xM.pdf
SAK-XC2287M-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE8082ESXUMA1 Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02
TLE8082ESXUMA1
Hersteller: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.98 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLE8082ESXUMA1 Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02
TLE8082ESXUMA1
Hersteller: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 23999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.81 EUR
10+5.94 EUR
25+5.47 EUR
100+4.96 EUR
250+4.71 EUR
500+4.57 EUR
1000+4.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE8088EMXUMA1 Infineon-TLE8088EM-DS-v01_00-en.pdf?fileId=db3a30433a047ba0013a446e76be0bbb
TLE8088EMXUMA1
Hersteller: Infineon Technologies
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+4.48 EUR
25+4.24 EUR
100+3.67 EUR
250+3.48 EUR
500+3.12 EUR
1000+2.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SAK-XC2269I136F128LRAAKXUMA1 Infineon-SAK-XC2269I-136F128LR%20AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e7537dfe4199
SAK-XC2269I136F128LRAAKXUMA1
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAK-XC2220U-4F40VAA INFNS16681-1.pdf?t.download=true&u=5oefqw
SAK-XC2220U-4F40VAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92104131QXXUMA1 Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962
TLE92104131QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92104131QXXUMA1 Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962
TLE92104131QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE9872QXA40XUMA1 Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+6.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE9862QXA40XUMA1 Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE92104232QXXUMA1 Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976
TLE92104232QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.75 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXV33XUMA1 Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25
TLE9185QXV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.12 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXV33XUMA1 Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25
TLE9185QXV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
auf Bestellung 9050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
10+4.75 EUR
25+4.36 EUR
100+3.94 EUR
250+3.74 EUR
500+3.61 EUR
1000+3.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXXUMA1 Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f
Hersteller: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXXUMA1 Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f
Hersteller: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
10+5.01 EUR
25+4.54 EUR
100+4.03 EUR
250+3.79 EUR
500+3.65 EUR
1000+3.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
6EDL7141XUMA1 Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3
6EDL7141XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6EDL7141XUMA1 Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3
6EDL7141XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.7 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.72 EUR
500+2.63 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BGA7P320E6327XTSA1 Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423
BGA7P320E6327XTSA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS23N20DTRRP irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFS23N20DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC240N12NS3G INFNS15757-1.pdf?t.download=true&u=5oefqw
BSC240N12NS3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC81D60E6YX1SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC81D120F6YX1SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U100N16RRBPSA1 Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af
DDB6U100N16RRBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F411MR12W2M1B76BOMA1
F411MR12W2M1B76BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGT40R070D1ATMA1 Infineon-IGT40R070D1-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aa91bc8810c5c
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IST007N04NM6AUMA1 Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d
IST007N04NM6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.81 EUR
10+4.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
REFICL8810LED43WBMTOBO1
REFICL8810LED43WBMTOBO1
Hersteller: Infineon Technologies
Description: ICL8810 REF BOARD 43W BM
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+91.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R900P7ATMA1 Infineon-IPLK70R900P7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce0bd2c1b2d5f
IPLK70R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N06S403ATMA2 INFNS14378-1.pdf?t.download=true&u=5oefqw
IPD100N06S403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.43 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CYW4329HKUBGT BCM4329_RevF_Sep19,2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 436 437 438 439 440 441 442 443 444 445 446 498 747 996 1245 1494 1743 1992 2241 2490 2497  [ Nächste Seite >> ]