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BGAV1A10E6327XTSA1 BGAV1A10E6327XTSA1 Infineon Technologies Infineon-BGAV1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926ac2014ba7 Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
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S25FL032P0XNFV013M S25FL032P0XNFV013M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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S25FL032P0XNFV003M S25FL032P0XNFV003M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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IR3820AMTRPBF IR3820AMTRPBF Infineon Technologies IR3820AMPBF.pdf Description: IC REG BUCK ADJ 14A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
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10+4.90 EUR
25+4.59 EUR
100+4.16 EUR
250+3.90 EUR
500+3.72 EUR
1000+3.54 EUR
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BSZ146N10LS5ATMA1 BSZ146N10LS5ATMA1 Infineon Technologies Infineon-BSZ146N10LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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500+1.03 EUR
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TLE9202EDXUMA1 TLE9202EDXUMA1 Infineon Technologies Infineon-TLE9202ED-DS-v01_00-EN.pdf?fileId=5546d462580663ef01583e8508e71921 Description: IC HALF BRIDGE DRVR 6A DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5109A16DE2210XUMA1 TLE5109A16DE2210XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: IC ANGLE SENSOR 5.0 V
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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FS820R08A6P2LMBPSA1 Infineon Technologies Description: IGBT MODULE 820A HYBRID PK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 820 A
Produkt ist nicht verfügbar
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PEB4265-2VV1.1 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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S25FL116K0XMFN043 S25FL116K0XMFN043 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Infineon Technologies Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010 Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
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5000+0.62 EUR
10000+0.60 EUR
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ISC046N04NM5ATMA1 ISC046N04NM5ATMA1 Infineon Technologies Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010 Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
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500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
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ISC058N04NM5ATMA1 ISC058N04NM5ATMA1 Infineon Technologies Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
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ISC058N04NM5ATMA1 ISC058N04NM5ATMA1 Infineon Technologies Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
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F3L300R12MT4B22BOSA1 F3L300R12MT4B22BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496 Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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2+376.78 EUR
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PEF 2055 N V2.1 PEF 2055 N V2.1 Infineon Technologies PEB205x%2C%20PEF205x.pdf Description: IC TELECOM INTERFACE 44LCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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PEF 2054 N V2.1 PEF 2054 N V2.1 Infineon Technologies PEB205x%2C%20PEF205x.pdf Description: IC TELECOM INTERFACE 44LCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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IR3585BMSY02TRP Infineon Technologies Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQE050N08NM5CGATMA1 IQE050N08NM5CGATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
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IQE050N08NM5CGATMA1 IQE050N08NM5CGATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
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4+5.77 EUR
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100+2.63 EUR
500+2.14 EUR
1000+1.99 EUR
2000+1.93 EUR
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IQE030N06NM5CGATMA1 IQE030N06NM5CGATMA1 Infineon Technologies Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Produkt ist nicht verfügbar
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IQE030N06NM5CGATMA1 IQE030N06NM5CGATMA1 Infineon Technologies Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
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IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766 Description: IGBT 600V 5.7A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
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IKN03N60RC2ATMA1 IKN03N60RC2ATMA1 Infineon Technologies Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766 Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 2721 Stücke:
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11+1.62 EUR
18+1.02 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.47 EUR
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IKN01N60RC2ATMA1 IKN01N60RC2ATMA1 Infineon Technologies Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763 Description: IGBT 600V 2.2A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
Produkt ist nicht verfügbar
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IKN01N60RC2ATMA1 IKN01N60RC2ATMA1 Infineon Technologies Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763 Description: IGBT 600V 2.2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
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20+0.90 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.40 EUR
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PEB3081HV1.4 PEB3081HV1.4 Infineon Technologies INFNS04966-1.pdf?t.download=true&u=5oefqw Description: SBCX-X S/T BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of Circuits: 1
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IPA60R600P7 IPA60R600P7 Infineon Technologies Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f Description: POWER FIELD-EFFECT TRANSISTOR, 6
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IPA60R280P6 IPA60R280P6 Infineon Technologies INFNS28761-1.pdf?t.download=true&u=5oefqw Description: 600V, N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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B161OLMHAXP B161OLMHAXP Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
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SAF-C161K-LM3VHA Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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C161KLMHABXQ C161KLMHABXQ Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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F505CALMCAXP F505CALMCAXP Infineon Technologies INFNS04968-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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FF600R12KT4HOSA1 FF600R12KT4HOSA1 Infineon Technologies Infineon-FF600R12KT4-DataSheet-v00_20-EN.pdf?fileId=5546d46277fc743901781bd467bb0693 Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Produkt ist nicht verfügbar
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FZ2400R17HP4B29BOSA2 FZ2400R17HP4B29BOSA2 Infineon Technologies Infineon-FZ2400R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7cc6136d15 Description: IGBT MODULE 1700V 4800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 4800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 15500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
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FS450R17OP4BPSA1 FS450R17OP4BPSA1 Infineon Technologies Infineon-FS450R17OP4-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b4a8bbd0415f Description: MEDIUM POWER ECONO AG-ECONOPP-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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BTS70081EPADAUGHBRDTOBO1 BTS70081EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7008-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPA
Part Status: Active
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BTS70082EPADAUGHBRDTOBO1 BTS70082EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7008-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPA
Part Status: Active
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BTS70401EPADAUGHBRDTOBO1 BTS70401EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7040-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPA
Part Status: Active
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BTS70802EPADAUGHBRDTOBO1 BTS70802EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7080-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPA
Part Status: Active
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FS75R12W2T7BPSA1 FS75R12W2T7BPSA1 Infineon Technologies Infineon-FS75R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742697484369b0 Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
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FS75R12KT4B15BOSA1 Infineon Technologies Infineon-FS75R12KT4_B15-DS-v03_00-EN.pdf?fileId=db3a30431a47d73d011a4964ea8d0126 Description: FS75R12 - IGBT MODULE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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AUIRFN8459TR AUIRFN8459TR Infineon Technologies auirfn8459.pdf?fileId=5546d462533600a4015355b189201444 Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
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AUIRFN8459TR AUIRFN8459TR Infineon Technologies auirfn8459.pdf?fileId=5546d462533600a4015355b189201444 Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
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FS35R12W1T7B11BOMA1 FS35R12W1T7B11BOMA1 Infineon Technologies Infineon-FS35R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186a62572f5 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
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FS35R12YT3BOMA1 Infineon Technologies INFNS08977-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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FS35R12W1T7BOMA1 FS35R12W1T7BOMA1 Infineon Technologies Infineon-FS35R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188b9bd732e Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Produkt ist nicht verfügbar
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FS35R12KE3GBPSA1 Infineon Technologies Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378 Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
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FS35R12KT3BPSA1 FS35R12KT3BPSA1 Infineon Technologies Infineon-FS35R12KT3-DataSheet-v02_01-EN.pdf?fileId=db3a304412b407950112b431421f53f3 Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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1+233.04 EUR
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FS35R12U1T4BPSA1 Infineon Technologies FS35R12U1T4.pdf Description: IGBT MOD 1200V 70A 250W
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S29PL032J55BAI120 S29PL032J55BAI120 Infineon Technologies Description: IC FLASH 32MBIT PARALLEL 48FBGA
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4+17.01 EUR
80+16.33 EUR
200+15.67 EUR
Mindestbestellmenge: 4
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SAF-XC864L-1FRI 5V AA SAF-XC864L-1FRI 5V AA Infineon Technologies XC864.pdf Description: IC MCU 8BIT 4KB FLASH 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-20
Part Status: Obsolete
Number of I/O: 9
DigiKey Programmable: Not Verified
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SAF-XC864L-1FRI 3V AA SAF-XC864L-1FRI 3V AA Infineon Technologies XC864.pdf Description: IC MCU 8BIT 4KB FLASH 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-20
Part Status: Obsolete
Number of I/O: 9
DigiKey Programmable: Not Verified
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IPB320P10LMATMA1 IPB320P10LMATMA1 Infineon Technologies Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar
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IPB320P10LMATMA1 IPB320P10LMATMA1 Infineon Technologies Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+5.13 EUR
100+3.65 EUR
500+3.46 EUR
Mindestbestellmenge: 3
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1SP0335V2M165NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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1SP0335V2M145NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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CY7C166-15VC CY7C166-15VC Infineon Technologies Description: 16KX4 24PIN 300MIL PWR-DN SRAM
Packaging: Bulk
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Standard
Memory Format: SRAM
Supplier Device Package: 24-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 16K x 4
DigiKey Programmable: Not Verified
auf Bestellung 2893 Stücke:
Lieferzeit 10-14 Tag (e)
68+7.26 EUR
Mindestbestellmenge: 68
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BSC0925NDATMA1 BSC0925NDATMA1 Infineon Technologies Infineon-BSC0925ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cec562a24914 Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 8133 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
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IAUA120N04S5N014AUMA1 IAUA120N04S5N014AUMA1 Infineon Technologies Infineon-IAUA120N04S5N014-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20aa5087743 Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.40 EUR
Mindestbestellmenge: 2000
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BGAV1A10E6327XTSA1 Infineon-BGAV1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926ac2014ba7
BGAV1A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
717+0.71 EUR
Mindestbestellmenge: 717
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S25FL032P0XNFV013M
S25FL032P0XNFV013M
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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S25FL032P0XNFV003M
S25FL032P0XNFV003M
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Produkt ist nicht verfügbar
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IR3820AMTRPBF IR3820AMPBF.pdf
IR3820AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
auf Bestellung 1143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+4.90 EUR
25+4.59 EUR
100+4.16 EUR
250+3.90 EUR
500+3.72 EUR
1000+3.54 EUR
Mindestbestellmenge: 4
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BSZ146N10LS5ATMA1 Infineon-BSZ146N10LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
BSZ146N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 10846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.56 EUR
100+1.23 EUR
500+1.03 EUR
1000+0.92 EUR
2000+0.87 EUR
Mindestbestellmenge: 9
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TLE9202EDXUMA1 Infineon-TLE9202ED-DS-v01_00-EN.pdf?fileId=5546d462580663ef01583e8508e71921
TLE9202EDXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 6A DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5109A16DE2210XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5109A16DE2210XUMA1
Hersteller: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 123952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
81+6.04 EUR
Mindestbestellmenge: 81
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FS820R08A6P2LMBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 820A HYBRID PK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 820 A
Produkt ist nicht verfügbar
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PEB4265-2VV1.1 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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S25FL116K0XMFN043 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFN043
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC046N04NM5ATMA1 Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010
ISC046N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.62 EUR
10000+0.60 EUR
Mindestbestellmenge: 5000
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ISC046N04NM5ATMA1 Infineon-ISC046N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e494460010
ISC046N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
auf Bestellung 14250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
ISC058N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.51 EUR
Mindestbestellmenge: 5000
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
ISC058N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
auf Bestellung 27353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.28 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
2000+0.55 EUR
Mindestbestellmenge: 9
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F3L300R12MT4B22BOSA1 Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496
F3L300R12MT4B22BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+376.78 EUR
Mindestbestellmenge: 2
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PEF 2055 N V2.1 PEB205x%2C%20PEF205x.pdf
PEF 2055 N V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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PEF 2054 N V2.1 PEB205x%2C%20PEF205x.pdf
PEF 2054 N V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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IR3585BMSY02TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQE050N08NM5CGATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.93 EUR
Mindestbestellmenge: 5000
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IQE050N08NM5CGATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 9687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+3.76 EUR
100+2.63 EUR
500+2.14 EUR
1000+1.99 EUR
2000+1.93 EUR
Mindestbestellmenge: 4
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IQE030N06NM5CGATMA1 Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee
IQE030N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Produkt ist nicht verfügbar
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IQE030N06NM5CGATMA1 Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee
IQE030N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.62 EUR
100+2.58 EUR
Mindestbestellmenge: 4
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IKN03N60RC2ATMA1 Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
Produkt ist nicht verfügbar
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IKN03N60RC2ATMA1 Infineon-IKN03N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a68660766
IKN03N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
auf Bestellung 2721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.02 EUR
100+0.67 EUR
500+0.51 EUR
1000+0.47 EUR
Mindestbestellmenge: 11
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IKN01N60RC2ATMA1 Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763
IKN01N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 2.2A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
Produkt ist nicht verfügbar
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IKN01N60RC2ATMA1 Infineon-IKN01N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a5b490763
IKN01N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 2.2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.90 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.40 EUR
Mindestbestellmenge: 13
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PEB3081HV1.4 INFNS04966-1.pdf?t.download=true&u=5oefqw
PEB3081HV1.4
Hersteller: Infineon Technologies
Description: SBCX-X S/T BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of Circuits: 1
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+22.18 EUR
Mindestbestellmenge: 22
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IPA60R600P7 Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f
IPA60R600P7
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Produkt ist nicht verfügbar
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IPA60R280P6 INFNS28761-1.pdf?t.download=true&u=5oefqw
IPA60R280P6
Hersteller: Infineon Technologies
Description: 600V, N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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B161OLMHAXP INFNS01615-1.pdf?t.download=true&u=5oefqw
B161OLMHAXP
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+12.58 EUR
Mindestbestellmenge: 40
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SAF-C161K-LM3VHA INFNS01615-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+20.91 EUR
Mindestbestellmenge: 26
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C161KLMHABXQ INFNS11060-1.pdf?t.download=true&u=5oefqw
C161KLMHABXQ
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
37+14.47 EUR
Mindestbestellmenge: 37
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F505CALMCAXP INFNS04968-1.pdf?t.download=true&u=5oefqw
F505CALMCAXP
Hersteller: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+10.28 EUR
Mindestbestellmenge: 48
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FF600R12KT4HOSA1 Infineon-FF600R12KT4-DataSheet-v00_20-EN.pdf?fileId=5546d46277fc743901781bd467bb0693
FF600R12KT4HOSA1
Hersteller: Infineon Technologies
Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Produkt ist nicht verfügbar
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FZ2400R17HP4B29BOSA2 Infineon-FZ2400R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7cc6136d15
FZ2400R17HP4B29BOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 4800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 15500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2352.26 EUR
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FS450R17OP4BPSA1 Infineon-FS450R17OP4-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b4a8bbd0415f
FS450R17OP4BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOPP-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+898.74 EUR
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BTS70081EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS70081EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7008-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPA
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.23 EUR
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BTS70082EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS70082EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7008-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPA
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.23 EUR
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BTS70401EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS70401EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7040-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPA
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.40 EUR
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BTS70802EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS70802EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7080-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPA
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.92 EUR
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FS75R12W2T7BPSA1 Infineon-FS75R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742697484369b0
FS75R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+104.95 EUR
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FS75R12KT4B15BOSA1 Infineon-FS75R12KT4_B15-DS-v03_00-EN.pdf?fileId=db3a30431a47d73d011a4964ea8d0126
Hersteller: Infineon Technologies
Description: FS75R12 - IGBT MODULE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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AUIRFN8459TR auirfn8459.pdf?fileId=5546d462533600a4015355b189201444
AUIRFN8459TR
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
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AUIRFN8459TR auirfn8459.pdf?fileId=5546d462533600a4015355b189201444
AUIRFN8459TR
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
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FS35R12W1T7B11BOMA1 Infineon-FS35R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186a62572f5
FS35R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+72.16 EUR
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FS35R12YT3BOMA1 INFNS08977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+59.45 EUR
Mindestbestellmenge: 9
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FS35R12W1T7BOMA1 Infineon-FS35R12W1T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f188b9bd732e
FS35R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Produkt ist nicht verfügbar
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FS35R12KE3GBPSA1 Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
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FS35R12KT3BPSA1 Infineon-FS35R12KT3-DataSheet-v02_01-EN.pdf?fileId=db3a304412b407950112b431421f53f3
FS35R12KT3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+233.04 EUR
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FS35R12U1T4BPSA1 FS35R12U1T4.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 250W
Produkt ist nicht verfügbar
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S29PL032J55BAI120
S29PL032J55BAI120
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+17.01 EUR
80+16.33 EUR
200+15.67 EUR
Mindestbestellmenge: 4
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SAF-XC864L-1FRI 5V AA XC864.pdf
SAF-XC864L-1FRI 5V AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-20
Part Status: Obsolete
Number of I/O: 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC864L-1FRI 3V AA XC864.pdf
SAF-XC864L-1FRI 3V AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-20
Part Status: Obsolete
Number of I/O: 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB320P10LMATMA1 Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc
IPB320P10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar
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IPB320P10LMATMA1 Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc
IPB320P10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+5.13 EUR
100+3.65 EUR
500+3.46 EUR
Mindestbestellmenge: 3
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1SP0335V2M165NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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1SP0335V2M145NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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CY7C166-15VC
CY7C166-15VC
Hersteller: Infineon Technologies
Description: 16KX4 24PIN 300MIL PWR-DN SRAM
Packaging: Bulk
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Standard
Memory Format: SRAM
Supplier Device Package: 24-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 16K x 4
DigiKey Programmable: Not Verified
auf Bestellung 2893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
68+7.26 EUR
Mindestbestellmenge: 68
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BSC0925NDATMA1 Infineon-BSC0925ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cec562a24914
BSC0925NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 8133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
Mindestbestellmenge: 9
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IAUA120N04S5N014AUMA1 Infineon-IAUA120N04S5N014-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20aa5087743
IAUA120N04S5N014AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4828 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.40 EUR
Mindestbestellmenge: 2000
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