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BCR 114F E6327 BCR 114F E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSFP-3
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CY8C20045-24LKXIT CY8C20045-24LKXIT Infineon Technologies Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
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BA89502VH6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16350 Stücke:
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TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
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TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
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IGI60F1414A1LAUMA1 IGI60F1414A1LAUMA1 Infineon Technologies Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3 Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
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IMC302AF064XUMA1 IMC302AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
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IMC301AF064XUMA1 IMC301AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
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SAF-XC886CM-6FFI 5V AC SAF-XC886CM-6FFI 5V AC Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
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ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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7+3.39 EUR
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100+2.37 EUR
500+1.95 EUR
1000+1.55 EUR
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ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
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ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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1000+2.07 EUR
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DD800S17H4_B2 Infineon Technologies INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw Description: DDXS17F - RECTIFIER DIODE MODULE
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DD800S17HA_B2 Infineon Technologies INFNS28235-1.pdf?t.download=true&u=ovmfp3 Description: RECTIFIER DIODE MODULE
Packaging: Bulk
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AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
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AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BAT54-04E6327 BAT54-04E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
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BAT54-06E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
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BAT54-05E6327 BAT54-05E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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5602+0.1 EUR
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T3800N16TOFVTXPSA1 T3800N16TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
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TLE4253EXUMA2 TLE4253EXUMA2 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
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11+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.48 EUR
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TLE4253GSXUMA4 TLE4253GSXUMA4 Infineon Technologies Infineon-TLE4253-DataSheet-v01_21-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE4253GSXUMA1 TLE4253GSXUMA1 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLE4253GSXUMA1 TLE4253GSXUMA1 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
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BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 521602 Stücke:
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IPLK80R750P7ATMA1 IPLK80R750P7ATMA1 Infineon Technologies Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IPLK80R750P7ATMA1 IPLK80R750P7ATMA1 Infineon Technologies Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
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IPLK70R750P7ATMA1 IPLK70R750P7ATMA1 Infineon Technologies Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76 Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IPLK70R750P7ATMA1 IPLK70R750P7ATMA1 Infineon Technologies Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76 Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
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IPLK80R2K0P7ATMA1 IPLK80R2K0P7ATMA1 Infineon Technologies Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3 Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
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IPLK80R2K0P7ATMA1 IPLK80R2K0P7ATMA1 Infineon Technologies Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3 Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IPLK80R900P7ATMA1 IPLK80R900P7ATMA1 Infineon Technologies Infineon-IPLK80R900P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1bd6c02c8 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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IPLK80R1K2P7ATMA1 IPLK80R1K2P7ATMA1 Infineon Technologies Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256 Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK80R1K2P7ATMA1 IPLK80R1K2P7ATMA1 Infineon Technologies Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256 Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPLK70R1K2P7ATMA1 IPLK70R1K2P7ATMA1 Infineon Technologies Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Produkt ist nicht verfügbar
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IPLK70R1K2P7ATMA1 IPLK70R1K2P7ATMA1 Infineon Technologies Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPLK70R1K4P7ATMA1 IPLK70R1K4P7ATMA1 Infineon Technologies Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPLK70R1K4P7ATMA1 IPLK70R1K4P7ATMA1 Infineon Technologies Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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REFXDPL8219U40WTOBO1 REFXDPL8219U40WTOBO1 Infineon Technologies Infineon-Engineering_report_REF-XDPL8219-U40W-ApplicationNotes-v01_01-EN.pdf?fileId=5546d462737c45b901739fceff16729b Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
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SIGC14T60SNCX1SA3 Infineon Technologies SIGC14T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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BLOCKCHAINSTARTKITTOBO1 BLOCKCHAINSTARTKITTOBO1 Infineon Technologies Infineon-Product-Brief-Blockchain-Security-2Go-starter-kit-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a0165c27a4161 Description: SECURITY 2 GO
Part Status: Active
Packaging: Box
Type: Near Field Communication (NFC)
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IR35215MTRPBF IR35215MTRPBF Infineon Technologies Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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IR35215MTRPBF IR35215MTRPBF Infineon Technologies Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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2+13.26 EUR
10+10.21 EUR
25+9.45 EUR
100+8.6 EUR
250+8.2 EUR
500+7.96 EUR
1000+7.76 EUR
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CY7C1370KV33-200AXC CY7C1370KV33-200AXC Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PARALLEL 100TQFP
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
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2+13.2 EUR
10+12.28 EUR
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IPA075N15N3 IPA075N15N3 Infineon Technologies INFNS15789-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 39W (Tc)
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IPA075N15N3G IPA075N15N3G Infineon Technologies INFNS15789-1.pdf?t.download=true&u=5oefqw Description: IPA075N15 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IRFHM8363TRPBF IRFHM8363TRPBF Infineon Technologies irfhm8363pbf.pdf?fileId=5546d462533600a40153562378cd1f57 Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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IPI075N15N3G IPI075N15N3G Infineon Technologies INFNS16325-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
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IPI075N15N3 IPI075N15N3 Infineon Technologies INFNS15413-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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BSC120N12LSGATMA1 BSC120N12LSGATMA1 Infineon Technologies Infineon-BSC120N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dc040007d Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BSC120N12LSGATMA1 BSC120N12LSGATMA1 Infineon Technologies Infineon-BSC120N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dc040007d Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2367 Stücke:
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6+3.83 EUR
10+2.64 EUR
100+2.15 EUR
500+1.75 EUR
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BSC130P03LS G Infineon Technologies Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C4014LQI-SLT1 CY8C4014LQI-SLT1 Infineon Technologies PSoC_4000Family_DS.pdf Description: IC MCU 32BIT 16KB FLASH 16QFN
Speed: 16MHz
Mounting Type: Surface Mount
Program Memory Size: 16KB (16K x 8)
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 12
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Produkt ist nicht verfügbar
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SAF-C161SLM3VAAFXUMA1 SAF-C161SLM3VAAFXUMA1 Infineon Technologies INFNS05712-1.pdf?t.download=true&u=5oefqw Description: SAF-C161S-LM 3V AA - LEGACY 16 B
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
DigiKey Programmable: Not Verified
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Packaging: Bulk
auf Bestellung 7472 Stücke:
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72+8.34 EUR
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IPB60R385CPATMA1 IPB60R385CPATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 9A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Produkt ist nicht verfügbar
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BCR 114F E6327 BCR114%20(2003).pdf
BCR 114F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Produkt ist nicht verfügbar
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CY8C20045-24LKXIT Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign
CY8C20045-24LKXIT
Hersteller: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA89502VH6327XTSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16350 Stücke:
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5106+0.13 EUR
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TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
auf Bestellung 594 Stücke:
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4+5.78 EUR
5+5.16 EUR
10+4.93 EUR
25+4.65 EUR
50+4.46 EUR
100+4.28 EUR
500+3.94 EUR
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IGI60F1414A1LAUMA1 Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3
IGI60F1414A1LAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMC302AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC302AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 235 Stücke:
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2+12.86 EUR
10+11.61 EUR
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IMC301AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC301AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 1567 Stücke:
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3+10.33 EUR
10+7.9 EUR
25+7.29 EUR
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250+6.32 EUR
500+6.13 EUR
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SAF-XC886CM-6FFI 5V AC Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
SAF-XC886CM-6FFI 5V AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+1.37 EUR
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ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 6987 Stücke:
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7+3.39 EUR
10+3.03 EUR
100+2.37 EUR
500+1.95 EUR
1000+1.55 EUR
2000+1.44 EUR
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ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
auf Bestellung 5000 Stücke:
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5000+1.21 EUR
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ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10539 Stücke:
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7+3.45 EUR
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 5000 Stücke:
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5000+1.08 EUR
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 5000 Stücke:
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6+3.86 EUR
10+2.46 EUR
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ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4756 Stücke:
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4+6.14 EUR
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DD800S17H4_B2 INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
auf Bestellung 112 Stücke:
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DD800S17HA_B2 INFNS28235-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Packaging: Bulk
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AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4800+3.27 EUR
Mindestbestellmenge: 4800 Stücke
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AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.92 EUR
10+5.9 EUR
100+4.18 EUR
500+3.45 EUR
1000+3.27 EUR
Mindestbestellmenge: 3 Stücke
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BAT54-04E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-04E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5602+0.098 EUR
Mindestbestellmenge: 5602 Stücke
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BAT54-06E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
auf Bestellung 163000 Stücke:
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AnzahlPrivatkunde
5170+0.13 EUR
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BAT54-05E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-05E6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 41151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5602+0.1 EUR
Mindestbestellmenge: 5602 Stücke
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T3800N16TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
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TLE4253EXUMA2 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
11+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.48 EUR
Mindestbestellmenge: 8 Stücke
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TLE4253GSXUMA4 Infineon-TLE4253-DataSheet-v01_21-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA4
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.24 EUR
Mindestbestellmenge: 2500 Stücke
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TLE4253GSXUMA1 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4253GSXUMA1 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Produkt ist nicht verfügbar
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BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf
BCR583E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 521602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4418+0.14 EUR
Mindestbestellmenge: 4418 Stücke
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IPLK80R750P7ATMA1 Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed
IPLK80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPLK80R750P7ATMA1 Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed
IPLK80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.16 EUR
10+2.67 EUR
100+1.81 EUR
500+1.44 EUR
1000+1.32 EUR
Mindestbestellmenge: 6 Stücke
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IPLK70R750P7ATMA1 Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76
IPLK70R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPLK70R750P7ATMA1 Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76
IPLK70R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R2K0P7ATMA1 Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3
IPLK80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPLK80R2K0P7ATMA1 Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3
IPLK80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R900P7ATMA1 Infineon-IPLK80R900P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1bd6c02c8
IPLK80R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
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IPLK80R1K2P7ATMA1 Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256
IPLK80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPLK80R1K2P7ATMA1 Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256
IPLK80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R1K2P7ATMA1 Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a
IPLK70R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPLK70R1K2P7ATMA1 Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a
IPLK70R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IPLK70R1K4P7ATMA1 Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d
IPLK70R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPLK70R1K4P7ATMA1 Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d
IPLK70R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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REFXDPL8219U40WTOBO1 Infineon-Engineering_report_REF-XDPL8219-U40W-ApplicationNotes-v01_01-EN.pdf?fileId=5546d462737c45b901739fceff16729b
REFXDPL8219U40WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+221.04 EUR
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SIGC14T60SNCX1SA3 SIGC14T60SNC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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BLOCKCHAINSTARTKITTOBO1 Infineon-Product-Brief-Blockchain-Security-2Go-starter-kit-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a0165c27a4161
BLOCKCHAINSTARTKITTOBO1
Hersteller: Infineon Technologies
Description: SECURITY 2 GO
Part Status: Active
Packaging: Box
Type: Near Field Communication (NFC)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+121.69 EUR
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IR35215MTRPBF Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b
IR35215MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+7.52 EUR
Mindestbestellmenge: 3000 Stücke
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IR35215MTRPBF Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b
IR35215MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER MULTIPHASE 40QFN
Part Status: Active
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 10mA
Applications: Multiphase Controller
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.26 EUR
10+10.21 EUR
25+9.45 EUR
100+8.6 EUR
250+8.2 EUR
500+7.96 EUR
1000+7.76 EUR
Mindestbestellmenge: 2 Stücke
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CY7C1370KV33-200AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.2 EUR
10+12.28 EUR
Mindestbestellmenge: 2 Stücke
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IPA075N15N3 INFNS15789-1.pdf?t.download=true&u=5oefqw
IPA075N15N3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 39W (Tc)
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
70+8.26 EUR
Mindestbestellmenge: 70 Stücke
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IPA075N15N3G INFNS15789-1.pdf?t.download=true&u=5oefqw
IPA075N15N3G
Hersteller: Infineon Technologies
Description: IPA075N15 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IRFHM8363TRPBF irfhm8363pbf.pdf?fileId=5546d462533600a40153562378cd1f57
IRFHM8363TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPI075N15N3G INFNS16325-1.pdf?t.download=true&u=5oefqw
IPI075N15N3G
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPI075N15N3 INFNS15413-1.pdf?t.download=true&u=5oefqw
IPI075N15N3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BSC120N12LSGATMA1 Infineon-BSC120N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dc040007d
BSC120N12LSGATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC120N12LSGATMA1 Infineon-BSC120N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dc040007d
BSC120N12LSGATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2367 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
10+2.64 EUR
100+2.15 EUR
500+1.75 EUR
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BSC130P03LS G
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C4014LQI-SLT1 PSoC_4000Family_DS.pdf
CY8C4014LQI-SLT1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16QFN
Speed: 16MHz
Mounting Type: Surface Mount
Program Memory Size: 16KB (16K x 8)
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 12
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Produkt ist nicht verfügbar
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SAF-C161SLM3VAAFXUMA1 INFNS05712-1.pdf?t.download=true&u=5oefqw
SAF-C161SLM3VAAFXUMA1
Hersteller: Infineon Technologies
Description: SAF-C161S-LM 3V AA - LEGACY 16 B
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
DigiKey Programmable: Not Verified
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Number of I/O: 63
Part Status: Active
Supplier Device Package: PG-MQFP-80-7
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Packaging: Bulk
auf Bestellung 7472 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+8.34 EUR
Mindestbestellmenge: 72 Stücke
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IPB60R385CPATMA1 fundamentals-of-power-semiconductors
IPB60R385CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Produkt ist nicht verfügbar
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