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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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3+8.13 EUR
10+6.19 EUR
25+5.71 EUR
100+5.18 EUR
250+4.92 EUR
500+4.77 EUR
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IPAN60R650CEXKSA1 IPAN60R650CEXKSA1 Infineon Technologies Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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SAK-XC2264-56F66LAC SAK-XC2264-56F66LAC Infineon Technologies INFNS12472-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
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TLE7469GV53AUMA1 TLE7469GV53AUMA1 Infineon Technologies Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04 Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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3+6.83 EUR
10+5.18 EUR
25+4.77 EUR
100+4.32 EUR
250+4.1 EUR
500+3.97 EUR
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T1080N04TOFXPSA1 T1080N04TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRF6898MTRPBF Infineon Technologies IRSDS13491-1.pdf?t.download=true&u=5oefqw Description: IRF6898 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Supplier Device Package: DirectFET™ Isometric MX
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
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IFX80471SKV50 IFX80471SKV50 Infineon Technologies INFNS15572-1.pdf?t.download=true&u=5oefqw Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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IFX80471SKV Infineon Technologies INFNS15572-1.pdf?t.download=true&u=5oefqw Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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IFX80471SKVXUMA1 IFX80471SKVXUMA1 Infineon Technologies IFX80471.pdf Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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ISZ0803NLSATMA1 ISZ0803NLSATMA1 Infineon Technologies Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
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ISZ0803NLSATMA1 ISZ0803NLSATMA1 Infineon Technologies Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
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7+2.6 EUR
11+1.65 EUR
100+1.1 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.73 EUR
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ISC0803NLSATMA1 Infineon Technologies Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93 Description: TRENCH >=100V PG-TDSON-8
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ISC0803NLSATMA1 Infineon Technologies Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93 Description: TRENCH >=100V PG-TDSON-8
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IPW50R399CPFKSA1 IPW50R399CPFKSA1 Infineon Technologies IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847 Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
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IPD220N06L3GATMA1 IPD220N06L3GATMA1 Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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5000+0.55 EUR
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IPD088N06N3GATMA1 IPD088N06N3GATMA1 Infineon Technologies Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
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IPD048N06L3GATMA1 IPD048N06L3GATMA1 Infineon Technologies Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
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7500+0.88 EUR
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IRF7524D1TRPBF IRF7524D1TRPBF Infineon Technologies IRF7524D1PbF.pdf Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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IAUS300N08S5N012TATMA1 IAUS300N08S5N012TATMA1 Infineon Technologies Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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TLT125D0EJXUMA1 TLT125D0EJXUMA1 Infineon Technologies Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381 Description: IC REG LINEAR POS ADJ 8DSO-52
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
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TLT125D0EJXUMA1 TLT125D0EJXUMA1 Infineon Technologies Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381 Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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TLE9879QTW40XUMA1 TLE9879QTW40XUMA1 Infineon Technologies Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f Description: IC MCU 32BIT 128KB FLASH 48TQFP
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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TLE9879QTW40XUMA1 TLE9879QTW40XUMA1 Infineon Technologies Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f Description: IC MCU 32BIT 128KB FLASH 48TQFP
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 Infineon Technologies Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72 Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
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FS450R12OE4B81BPSA1 FS450R12OE4B81BPSA1 Infineon Technologies Infineon-FS450R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a28a36c7b Description: MEDIUM POWER ECONO
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
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FF2MR12KM1HOSA1 FF2MR12KM1HOSA1 Infineon Technologies Infineon-FF2MR12KM1-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bc9bf70c569b Description: MOSFET 2N-CH 1200V 500A AG-62MM
Part Status: Obsolete
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IDK05G120C5XTMA1 IDK05G120C5XTMA1 Infineon Technologies Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b Description: DIODE SIC 1.2KV 19.1A TO263-1
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IDK05G120C5XTMA1 IDK05G120C5XTMA1 Infineon Technologies Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b Description: DIODE SIC 1.2KV 19.1A TO263-1
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
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CHL8326-20CRT CHL8326-20CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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EVAL3K3WTPPFCCCTOBO1 EVAL3K3WTPPFCCCTOBO1 Infineon Technologies Infineon-Solution_brief_CoolMOS_CCM_totem_pole_PFC-ApplicationBrief-v01_00-EN.pdf?fileId=5546d46278d64ffd0179314706a738c4 Description: CFD7 EVAL BOARD
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: CFD7, XMC1402
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
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XMC1402T038X0200AAXUMA1 XMC1402T038X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1402T038X0200AAXUMA1 XMC1402T038X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1402Q040X0128AAXUMA1 XMC1402Q040X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 40VQFN
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
DigiKey Programmable: Not Verified
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XMC1402Q040X0200AAXUMA1 XMC1402Q040X0200AAXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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BFS 360L6 E6327 Infineon Technologies BFS360L6.pdf Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
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BFS 386L6 E6327 Infineon Technologies BFS386L6.pdf Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
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BFS 469L6 E6327 Infineon Technologies BFS469L6.pdf Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 14.5dB
Power - Max: 200mW, 250mW
Current - Collector (Ic) (Max): 50mA, 70mA
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
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BFS 466L6 E6327 Infineon Technologies BFS466L6.pdf Description: RF TRANS 2 NPN 5V/9V 14GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 200mW, 210mW
Current - Collector (Ic) (Max): 50mA, 35mA
Voltage - Collector Emitter Breakdown (Max): 5V, 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
Frequency - Transition: 22GHz, 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
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BFS 380L6 E6327 Infineon Technologies BFS380L6.pdf Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Supplier Device Package: TSLP-6-1
Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 80mA
Power - Max: 380mW
Gain: 8dB ~ 12dB
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
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BFS 460L6 E6327 Infineon Technologies BFS460L6.pdf Description: RF TRANS 2NPN 5.8V 22GHZ TSLP-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 14.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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AUIRFSL8405-306TRL Infineon Technologies Description: MOSFET N-CH 40V 120A TO262
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 163W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
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IPB80P04P405ATMA2 IPB80P04P405ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB80P04P405ATMA2 IPB80P04P405ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB80P04P407ATMA2 IPB80P04P407ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783099142e25 Description: MOSFET_(20V 40V) PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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AUIRGF66524D0 AUIRGF66524D0 Infineon Technologies AUIRGx66524D0.pdf Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
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EVALIHW65R62EDS06JTOBO1 EVALIHW65R62EDS06JTOBO1 Infineon Technologies EVAL-IHW65R62EDS06J.PDF Description: EVAL BOARD FOR IHW40N65R6
Part Status: Active
Embedded: No
Primary Attributes: 250V Input Voltage
Supplied Contents: Board(s)
Utilized IC / Part: IHW40N65R6
Type: Power Management
Function: IGBT Power Module (Half-Bridge)
Packaging: Bulk
Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Produkt ist nicht verfügbar
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KP275E2616XTMA1 KP275E2616XTMA1 Infineon Technologies Infineon-KP275-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b1a430d485f4f Description: SENSOR 58.02PSIA 12BIT DSOF8
Part Status: Last Time Buy
Port Style: No Port
Supplier Device Package: PG-DSOF-8-162
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Accuracy: ±0.77%
Pressure Type: Absolute
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Output: 12 b
Mounting Type: Surface Mount
Output Type: SENT
Package / Case: 8-SMD Module
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTFB211803FLV2R0XTMA1 Infineon Technologies PTFB211803EL,FL.pdf Description: IC AMP RF LDMOS H-34288-4
Packaging: Strip
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 40W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.3 A
Produkt ist nicht verfügbar
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PTFA092211FLV4R250XTMA1 PTFA092211FLV4R250XTMA1 Infineon Technologies PTFA092211xL.pdf Description: IC FET RF LDMOS
Current - Test: 1.75 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-34288-2
Technology: LDMOS
Gain: 18dB
Power - Output: 50W
Frequency: 920MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: 2-Flatpack, Fin Leads, Flanged
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Infineon-IPT65R099CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794edc7b78a2 Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
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SDT08S60 SDT08S60 Infineon Technologies SDT08S60.pdf Description: DIODE SIL CARB 600V 8A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
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BSO220N03MSGXUMA1 BSO220N03MSGXUMA1 Infineon Technologies BSO220N03MS_G.pdf Description: MOSFET N-CH 30V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
Produkt ist nicht verfügbar
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IMZA65R030M1HXKSA1 IMZA65R030M1HXKSA1 Infineon Technologies Infineon-IMZA65R030M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0337d93c59 Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
auf Bestellung 176 Stücke:
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1+26.07 EUR
30+21.09 EUR
120+19.85 EUR
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IMBG120R045M1HXTMA1 IMBG120R045M1HXTMA1 Infineon Technologies Infineon-IMBG120R045M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecc4e83263 Description: SICFET N-CH 1.2KV 47A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
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1+18.78 EUR
10+13.64 EUR
100+12.48 EUR
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S70PL254J00BAWA23 Infineon Technologies Description: IC FLASH MEM NOR 84MCP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70PL254J00BFWA23 Infineon Technologies Description: IC FLASH MEM NOR 84MCP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF24902HV2.1 PEF24902HV2.1 Infineon Technologies Description: 4 CHANNEL ISDN ANALOG FRONT END
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.13 EUR
10+6.19 EUR
25+5.71 EUR
100+5.18 EUR
250+4.92 EUR
500+4.77 EUR
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IPAN60R650CEXKSA1 Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d
IPAN60R650CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 691 Stücke:
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AnzahlPreis
487+0.96 EUR
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SAK-XC2264-56F66LAC INFNS12472-1.pdf?t.download=true&u=5oefqw
SAK-XC2264-56F66LAC
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 70 Stücke:
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AnzahlPreis
3+7.62 EUR
10+5.79 EUR
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TLE7469GV53AUMA1 Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04
TLE7469GV53AUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5988 Stücke:
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AnzahlPreis
3+6.83 EUR
10+5.18 EUR
25+4.77 EUR
100+4.32 EUR
250+4.1 EUR
500+3.97 EUR
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T1080N04TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N04TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRSDS13491-1.pdf?t.download=true&u=5oefqw
IRF6898MTRPBF
Hersteller: Infineon Technologies
Description: IRF6898 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Supplier Device Package: DirectFET™ Isometric MX
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Produkt ist nicht verfügbar
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IFX80471SKV50 INFNS15572-1.pdf?t.download=true&u=5oefqw
IFX80471SKV50
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
auf Bestellung 7257 Stücke:
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AnzahlPreis
290+1.67 EUR
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IFX80471SKV INFNS15572-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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IFX80471SKVXUMA1 IFX80471.pdf
IFX80471SKVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
auf Bestellung 8665 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
198+2.29 EUR
Mindestbestellmenge: 198 Stücke
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ISZ0803NLSATMA1 Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d
ISZ0803NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0803NLSATMA1 Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d
ISZ0803NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.6 EUR
11+1.65 EUR
100+1.1 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.73 EUR
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ISC0803NLSATMA1 Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
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ISC0803NLSATMA1 Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
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IPW50R399CPFKSA1 IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847
IPW50R399CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
251+1.95 EUR
Mindestbestellmenge: 251 Stücke
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IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.59 EUR
5000+0.55 EUR
Mindestbestellmenge: 2500 Stücke
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IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
IPD088N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD048N06L3GATMA1 Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.98 EUR
5000+0.91 EUR
7500+0.88 EUR
Mindestbestellmenge: 2500 Stücke
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IRF7524D1TRPBF IRF7524D1PbF.pdf
IRF7524D1TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Produkt ist nicht verfügbar
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IAUS300N08S5N012TATMA1 Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb
IAUS300N08S5N012TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1800+4.62 EUR
Mindestbestellmenge: 1800 Stücke
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TLT125D0EJXUMA1 Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381
TLT125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Produkt ist nicht verfügbar
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TLT125D0EJXUMA1 Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381
TLT125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.87 EUR
10+2.11 EUR
25+1.92 EUR
100+1.71 EUR
250+1.61 EUR
500+1.55 EUR
1000+1.5 EUR
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TLE9879QTW40XUMA1 Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f
TLE9879QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+7.87 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9879QTW40XUMA1 Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f
TLE9879QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 7433 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.41 EUR
10+13.01 EUR
25+12.4 EUR
100+10.77 EUR
250+10.29 EUR
500+9.38 EUR
1000+8.17 EUR
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FS300R17OE4B81BPSA1 Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72
FS300R17OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
Produkt ist nicht verfügbar
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FS450R12OE4B81BPSA1 Infineon-FS450R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a28a36c7b
FS450R12OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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FF2MR12KM1HOSA1 Infineon-FF2MR12KM1-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bc9bf70c569b
FF2MR12KM1HOSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 500A AG-62MM
Part Status: Obsolete
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+1461.52 EUR
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IDK05G120C5XTMA1 Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b
IDK05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IDK05G120C5XTMA1 Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b
IDK05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.85 EUR
10+4.51 EUR
100+3.17 EUR
500+2.6 EUR
Mindestbestellmenge: 3 Stücke
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CHL8326-20CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8326-20CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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EVAL3K3WTPPFCCCTOBO1 Infineon-Solution_brief_CoolMOS_CCM_totem_pole_PFC-ApplicationBrief-v01_00-EN.pdf?fileId=5546d46278d64ffd0179314706a738c4
EVAL3K3WTPPFCCCTOBO1
Hersteller: Infineon Technologies
Description: CFD7 EVAL BOARD
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: CFD7, XMC1402
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+888.64 EUR
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XMC1402T038X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1402T038X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.49 EUR
10+3.36 EUR
25+3.07 EUR
100+2.76 EUR
250+2.61 EUR
500+2.53 EUR
1000+2.45 EUR
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XMC1402Q040X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+2.58 EUR
Mindestbestellmenge: 5000 Stücke
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XMC1402Q040X0200AAXUMA1 fundamentals-of-power-semiconductors
XMC1402Q040X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFS 360L6 E6327 BFS360L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Produkt ist nicht verfügbar
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BFS 386L6 E6327 BFS386L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
Produkt ist nicht verfügbar
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BFS 469L6 E6327 BFS469L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 14.5dB
Power - Max: 200mW, 250mW
Current - Collector (Ic) (Max): 50mA, 70mA
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BFS 466L6 E6327 BFS466L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 5V/9V 14GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 200mW, 210mW
Current - Collector (Ic) (Max): 50mA, 35mA
Voltage - Collector Emitter Breakdown (Max): 5V, 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
Frequency - Transition: 22GHz, 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BFS 380L6 E6327 BFS380L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Supplier Device Package: TSLP-6-1
Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 80mA
Power - Max: 380mW
Gain: 8dB ~ 12dB
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFS 460L6 E6327 BFS460L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2NPN 5.8V 22GHZ TSLP-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 14.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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AUIRFSL8405-306TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 163W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Produkt ist nicht verfügbar
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IPB80P04P405ATMA2 Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a
IPB80P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.6 EUR
Mindestbestellmenge: 1000 Stücke
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IPB80P04P405ATMA2 Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a
IPB80P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.73 EUR
10+3.07 EUR
100+2.13 EUR
500+1.8 EUR
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IPB80P04P407ATMA2 Infineon-IPP_B_I80P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783099142e25
IPB80P04P407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.61 EUR
Mindestbestellmenge: 1000 Stücke
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AUIRGF66524D0 AUIRGx66524D0.pdf
AUIRGF66524D0
Hersteller: Infineon Technologies
Description: IGBT 600V 60A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/75ns
Switching Energy: 915µJ (on), 280µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 214 W
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
61+7.5 EUR
Mindestbestellmenge: 61 Stücke
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EVALIHW65R62EDS06JTOBO1 EVAL-IHW65R62EDS06J.PDF
EVALIHW65R62EDS06JTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IHW40N65R6
Part Status: Active
Embedded: No
Primary Attributes: 250V Input Voltage
Supplied Contents: Board(s)
Utilized IC / Part: IHW40N65R6
Type: Power Management
Function: IGBT Power Module (Half-Bridge)
Packaging: Bulk
Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Produkt ist nicht verfügbar
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KP275E2616XTMA1 Infineon-KP275-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b1a430d485f4f
KP275E2616XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 58.02PSIA 12BIT DSOF8
Part Status: Last Time Buy
Port Style: No Port
Supplier Device Package: PG-DSOF-8-162
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Accuracy: ±0.77%
Pressure Type: Absolute
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Output: 12 b
Mounting Type: Surface Mount
Output Type: SENT
Package / Case: 8-SMD Module
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTFB211803FLV2R0XTMA1 PTFB211803EL,FL.pdf
Hersteller: Infineon Technologies
Description: IC AMP RF LDMOS H-34288-4
Packaging: Strip
Package / Case: 2-Flatpack, Fin Leads, Flanged
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 40W
Gain: 17.5dB
Technology: LDMOS
Supplier Device Package: H-34288-4/2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.3 A
Produkt ist nicht verfügbar
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PTFA092211FLV4R250XTMA1 PTFA092211xL.pdf
PTFA092211FLV4R250XTMA1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Current - Test: 1.75 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-34288-2
Technology: LDMOS
Gain: 18dB
Power - Output: 50W
Frequency: 920MHz ~ 960MHz
Mounting Type: Surface Mount
Package / Case: 2-Flatpack, Fin Leads, Flanged
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT65R099CFD7XTMA1 Infineon-IPT65R099CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794edc7b78a2
IPT65R099CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
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SDT08S60 SDT08S60.pdf
SDT08S60
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 8A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
52+8.83 EUR
Mindestbestellmenge: 52 Stücke
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BSO220N03MSGXUMA1 BSO220N03MS_G.pdf
BSO220N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
Produkt ist nicht verfügbar
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IMZA65R030M1HXKSA1 Infineon-IMZA65R030M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0337d93c59
IMZA65R030M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+26.07 EUR
30+21.09 EUR
120+19.85 EUR
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IMBG120R045M1HXTMA1 Infineon-IMBG120R045M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecc4e83263
IMBG120R045M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 47A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
auf Bestellung 1224 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+18.78 EUR
10+13.64 EUR
100+12.48 EUR
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S70PL254J00BAWA23
Hersteller: Infineon Technologies
Description: IC FLASH MEM NOR 84MCP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70PL254J00BFWA23
Hersteller: Infineon Technologies
Description: IC FLASH MEM NOR 84MCP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF24902HV2.1
PEF24902HV2.1
Hersteller: Infineon Technologies
Description: 4 CHANNEL ISDN ANALOG FRONT END
Produkt ist nicht verfügbar
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