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1ED3131MC12HXUMA1 1ED3131MC12HXUMA1 Infineon Technologies Infineon-1ED31xxMC12H-_1ED-X3_Compact-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017802de09e5671d Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Produkt ist nicht verfügbar
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1ED3131MC12HXUMA1 1ED3131MC12HXUMA1 Infineon Technologies Infineon-1ED31xxMC12H-_1ED-X3_Compact-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017802de09e5671d Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
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6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
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STT1900N16P55XPSA1 STT1900N16P55XPSA1 Infineon Technologies Infineon-STT1900N16P55-DS-v03_01-EN.pdf?fileId=5546d4625f96303e015fd95f11276e7a Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
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BTS4880R Infineon Technologies INFN-S-A0001299500-1.pdf?t.download=true&u=5oefqw Description: BTS4880 - PROFET - SMART HIGH SI
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-36-12
Ratio - Input:Output: 1:1
Current - Output (Max): 625mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 11V ~ 45V
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Packaging: Bulk
Part Status: Active
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T830N14TOFXPSA1 T830N14TOFXPSA1 Infineon Technologies Infineon-T830N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd80128638723d95365 Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
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PXC1331CPNG003XTMA1 Infineon Technologies Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
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CY4521 CY4521 Infineon Technologies Infineon-CY4521_EZ-PD_CCG2_Evaluation_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eff22b015fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
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IRFH4255DTRPBF/BKN Infineon Technologies Description: IRFH4255DTRPBF/BKN
auf Bestellung 1229 Stücke:
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IRFHM4231TRPBF/BKN Infineon Technologies Description: IRFHM4231TRPBF/BKN
auf Bestellung 404 Stücke:
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BAS 16-02W E6327 BAS 16-02W E6327 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
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IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98 Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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465+0.98 EUR
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IPP65R145CFD7AAKSA1 IPP65R145CFD7AAKSA1 Infineon Technologies Infineon-IPP65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627a0b0c7b017a340e9235098f Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
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IDDD08G65C6XTMA1 IDDD08G65C6XTMA1 Infineon Technologies Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b Description: DIODE SIC 650V 24A PGHDSOP101
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDDD08G65C6XTMA1 IDDD08G65C6XTMA1 Infineon Technologies Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b Description: DIODE SIC 650V 24A PGHDSOP101
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 1813 Stücke:
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3+6.35 EUR
10+4.15 EUR
100+2.92 EUR
500+2.59 EUR
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IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
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3+8.45 EUR
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IDDD20G65C6XTMA1 IDDD20G65C6XTMA1 Infineon Technologies Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e Description: DIODE SIC 650V 51A PGHDSOP101
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
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1700+6.26 EUR
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IDDD20G65C6XTMA1 IDDD20G65C6XTMA1 Infineon Technologies Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e Description: DIODE SIC 650V 51A PGHDSOP101
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 51A
auf Bestellung 4558 Stücke:
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2+16.23 EUR
10+11.07 EUR
100+8.16 EUR
500+6.95 EUR
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IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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S70GL02GP11FAIR23 S70GL02GP11FAIR23 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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P2000D45X168HPSA1 Infineon Technologies Description: PRESS PACK IGBT BG-P16826K-1
Part Status: Obsolete
NTC Thermistor: No
Configuration: Single
Input: Standard
Packaging: Tray
Produkt ist nicht verfügbar
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BCR430UXTSA2 BCR430UXTSA2 Infineon Technologies Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 9087 Stücke:
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36+0.49 EUR
51+0.35 EUR
58+0.31 EUR
100+0.27 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
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IPB50N10S3L16ATMA1 IPB50N10S3L16ATMA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB50N10S3L16ATMA1 IPB50N10S3L16ATMA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPG20N10S436AATMA1 IPG20N10S436AATMA1 Infineon Technologies PdfFile_211447.pdf Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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5000+0.84 EUR
10000+0.79 EUR
15000+0.78 EUR
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BSC016N06NSSCATMA1 BSC016N06NSSCATMA1 Infineon Technologies Infineon-BSC016N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d46274b9648d0174c1fd04fb336c Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
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BGM7LLHM4L12E6327XTSA1 Infineon Technologies LTE_Low_Noise_Amplifiers_Br.pdf Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Part Status: Obsolete
Supplier Device Package: TSLP-12-4
Current - Supply: 4.5mA
Gain: 13dB
Voltage - Supply: 1.5V ~ 3.3V
RF Type: LTE
Frequency: 700MHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 12-XFQFN Exposed Pad
Packaging: Bulk
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IPB47N10S33ATMA1 IPB47N10S33ATMA1 Infineon Technologies IPx47N10S-33.pdf Description: MOSFET N-CH 100V 47A TO263-3
auf Bestellung 446 Stücke:
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AUIRFR1010Z AUIRFR1010Z Infineon Technologies IRSDS11928-1.pdf?t.download=true&u=5oefqw Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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PXE1110ADM-G001 Infineon Technologies Description: IC CONTROLLER
Produkt ist nicht verfügbar
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 Infineon Technologies SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8 Description: MOSFET P-CH 100V 4A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 Infineon Technologies SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8 Description: MOSFET P-CH 100V 4A TO252-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
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ACCESSORY33234NOSA1 Infineon Technologies Description: ACCESSORY IGBT MODULEE
Produkt ist nicht verfügbar
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FS20R06XL4BOMA1 Infineon Technologies Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Produkt ist nicht verfügbar
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SAKXC2286M104F80LAA SAKXC2286M104F80LAA Infineon Technologies INFNS14276-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-XC2287M-72F80L AA SAK-XC2287M-72F80L AA Infineon Technologies XC228xM.pdf Description: IC MCU 16/32B 576KB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE8082ESXUMA1 TLE8082ESXUMA1 Infineon Technologies Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02 Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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3000+3.98 EUR
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TLE8082ESXUMA1 TLE8082ESXUMA1 Infineon Technologies Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02 Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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3+7.81 EUR
10+5.94 EUR
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100+4.96 EUR
250+4.71 EUR
500+4.57 EUR
1000+4.44 EUR
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TLE8088EMXUMA1 TLE8088EMXUMA1 Infineon Technologies Infineon-TLE8088EM-DS-v01_00-en.pdf?fileId=db3a30433a047ba0013a446e76be0bbb Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Grade: Automotive
Part Status: Active
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4+5 EUR
10+4.48 EUR
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100+3.67 EUR
250+3.48 EUR
500+3.12 EUR
1000+2.64 EUR
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SAK-XC2269I136F128LRAAKXUMA1 SAK-XC2269I136F128LRAAKXUMA1 Infineon Technologies Infineon-SAK-XC2269I-136F128LR%20AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e7537dfe4199 Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x12b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 90K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
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SAK-XC2220U-4F40VAA SAK-XC2220U-4F40VAA Infineon Technologies INFNS16681-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
Produkt ist nicht verfügbar
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TLE92104131QXXUMA1 TLE92104131QXXUMA1 Infineon Technologies Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962 Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Produkt ist nicht verfügbar
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TLE92104131QXXUMA1 TLE92104131QXXUMA1 Infineon Technologies Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962 Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Cut Tape (CT)
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100+2.86 EUR
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1000+2.54 EUR
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TLE9872QXA40XUMA1 TLE9872QXA40XUMA1 Infineon Technologies Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8 Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE987x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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2500+5.49 EUR
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TLE9862QXA40XUMA1 TLE9862QXA40XUMA1 Infineon Technologies Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2 Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE986x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE92104232QXXUMA1 TLE92104232QXXUMA1 Infineon Technologies Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976 Description: IC HALF BRIDGE DRIVER 48VQFN
Part Status: Active
Fault Protection: Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
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TLE9185QXV33XUMA1 TLE9185QXV33XUMA1 Infineon Technologies Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
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TLE9185QXV33XUMA1 TLE9185QXV33XUMA1 Infineon Technologies Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
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TLE9185QXXUMA1 Infineon Technologies Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLE9185QXXUMA1 Infineon Technologies Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
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6EDL7141XUMA1 6EDL7141XUMA1 Infineon Technologies Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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6EDL7141XUMA1 6EDL7141XUMA1 Infineon Technologies Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 671 Stücke:
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4+4.7 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.72 EUR
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BGA7P320E6327XTSA1 BGA7P320E6327XTSA1 Infineon Technologies Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423 Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-16-12
Test Frequency: 3.3GHz ~ 4.2GHz
P1dB: 27.8dBm
Noise Figure: 3.5dB
Gain: 34.4dB
Voltage - Supply: 3.15V ~ 3.45V
RF Type: 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IRFS23N20DTRRP IRFS23N20DTRRP Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A D2PAK
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Produkt ist nicht verfügbar
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BSC240N12NS3G BSC240N12NS3G Infineon Technologies INFNS15757-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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SIDC81D60E6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIDC81D120F6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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DDB6U100N16RRBPSA1 DDB6U100N16RRBPSA1 Infineon Technologies Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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F411MR12W2M1B76BOMA1 F411MR12W2M1B76BOMA1 Infineon Technologies Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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1ED3131MC12HXUMA1 Infineon-1ED31xxMC12H-_1ED-X3_Compact-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017802de09e5671d
1ED3131MC12HXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Produkt ist nicht verfügbar
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1ED3131MC12HXUMA1 Infineon-1ED31xxMC12H-_1ED-X3_Compact-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017802de09e5671d
1ED3131MC12HXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
auf Bestellung 948 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
Mindestbestellmenge: 6 Stücke
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STT1900N16P55XPSA1 Infineon-STT1900N16P55-DS-v03_01-EN.pdf?fileId=5546d4625f96303e015fd95f11276e7a
STT1900N16P55XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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BTS4880R INFN-S-A0001299500-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BTS4880 - PROFET - SMART HIGH SI
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-36-12
Ratio - Input:Output: 1:1
Current - Output (Max): 625mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 11V ~ 45V
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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T830N14TOFXPSA1 Infineon-T830N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd80128638723d95365
T830N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+272.01 EUR
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PXC1331CPNG003XTMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+3.95 EUR
Mindestbestellmenge: 4000 Stücke
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CY4521 Infineon-CY4521_EZ-PD_CCG2_Evaluation_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eff22b015fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4521
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+100.57 EUR
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IRFH4255DTRPBF/BKN
Hersteller: Infineon Technologies
Description: IRFH4255DTRPBF/BKN
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 15 Stücke
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IRFHM4231TRPBF/BKN
Hersteller: Infineon Technologies
Description: IRFHM4231TRPBF/BKN
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 38 Stücke
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BAS 16-02W E6327 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS 16-02W E6327
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
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IPS65R400CEAKMA1 Infineon-IPS65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb6b9a04f98
IPS65R400CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
465+0.98 EUR
Mindestbestellmenge: 465 Stücke
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IPP65R145CFD7AAKSA1 Infineon-IPP65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627a0b0c7b017a340e9235098f
IPP65R145CFD7AAKSA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IDDD08G65C6XTMA1 Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b
IDDD08G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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IDDD08G65C6XTMA1 Infineon-IDDD08G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff7d31a104b
IDDD08G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.35 EUR
10+4.15 EUR
100+2.92 EUR
500+2.59 EUR
Mindestbestellmenge: 3 Stücke
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IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.45 EUR
Mindestbestellmenge: 3 Stücke
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IDDD20G65C6XTMA1 Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e
IDDD20G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1700+6.26 EUR
Mindestbestellmenge: 1700 Stücke
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IDDD20G65C6XTMA1 Infineon-IDDD20G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff837cf104e
IDDD20G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 51A
auf Bestellung 4558 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.23 EUR
10+11.07 EUR
100+8.16 EUR
500+6.95 EUR
Mindestbestellmenge: 2 Stücke
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IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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S70GL02GP11FAIR23 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR23
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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P2000D45X168HPSA1
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1
Part Status: Obsolete
NTC Thermistor: No
Configuration: Single
Input: Standard
Packaging: Tray
Produkt ist nicht verfügbar
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BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
BCR430UXTSA2
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 9087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
36+0.49 EUR
51+0.35 EUR
58+0.31 EUR
100+0.27 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 36 Stücke
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IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPB50N10S3L16ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPB50N10S3L16ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPG20N10S436AATMA1 PdfFile_211447.pdf
IPG20N10S436AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.84 EUR
10000+0.79 EUR
15000+0.78 EUR
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BSC016N06NSSCATMA1 Infineon-BSC016N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d46274b9648d0174c1fd04fb336c
BSC016N06NSSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+2.07 EUR
Mindestbestellmenge: 4000 Stücke
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BGM7LLHM4L12E6327XTSA1 LTE_Low_Noise_Amplifiers_Br.pdf
Hersteller: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Part Status: Obsolete
Supplier Device Package: TSLP-12-4
Current - Supply: 4.5mA
Gain: 13dB
Voltage - Supply: 1.5V ~ 3.3V
RF Type: LTE
Frequency: 700MHz ~ 2.7GHz
Mounting Type: Surface Mount
Package / Case: 12-XFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 682500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
175+2.58 EUR
Mindestbestellmenge: 175 Stücke
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IPB47N10S33ATMA1 IPx47N10S-33.pdf
IPB47N10S33ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
311+1.62 EUR
Mindestbestellmenge: 311 Stücke
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AUIRFR1010Z IRSDS11928-1.pdf?t.download=true&u=5oefqw
AUIRFR1010Z
Hersteller: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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PXE1110ADM-G001
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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SPD04P10PGBTMA1 SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8
SPD04P10PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SPD04P10PGBTMA1 SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8
SPD04P10PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Produkt ist nicht verfügbar
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ACCESSORY33234NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
Produkt ist nicht verfügbar
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FS20R06XL4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Produkt ist nicht verfügbar
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SAKXC2286M104F80LAA INFNS14276-1.pdf?t.download=true&u=5oefqw
SAKXC2286M104F80LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-XC2287M-72F80L AA XC228xM.pdf
SAK-XC2287M-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TLE8082ESXUMA1 Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02
TLE8082ESXUMA1
Hersteller: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+3.98 EUR
Mindestbestellmenge: 3000 Stücke
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TLE8082ESXUMA1 Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02
TLE8082ESXUMA1
Hersteller: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 23999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.81 EUR
10+5.94 EUR
25+5.47 EUR
100+4.96 EUR
250+4.71 EUR
500+4.57 EUR
1000+4.44 EUR
Mindestbestellmenge: 3 Stücke
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TLE8088EMXUMA1 Infineon-TLE8088EM-DS-v01_00-en.pdf?fileId=db3a30433a047ba0013a446e76be0bbb
TLE8088EMXUMA1
Hersteller: Infineon Technologies
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5 EUR
10+4.48 EUR
25+4.24 EUR
100+3.67 EUR
250+3.48 EUR
500+3.12 EUR
1000+2.64 EUR
Mindestbestellmenge: 4 Stücke
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SAK-XC2269I136F128LRAAKXUMA1 Infineon-SAK-XC2269I-136F128LR%20AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e7537dfe4199
SAK-XC2269I136F128LRAAKXUMA1
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x12b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 90K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-XC2220U-4F40VAA INFNS16681-1.pdf?t.download=true&u=5oefqw
SAK-XC2220U-4F40VAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Produkt ist nicht verfügbar
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TLE92104131QXXUMA1 Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962
TLE92104131QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE92104131QXXUMA1 Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962
TLE92104131QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Fault Protection: Over Temperature, Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Cut Tape (CT)
auf Bestellung 1496 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
Mindestbestellmenge: 4 Stücke
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TLE9872QXA40XUMA1 Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8
TLE9872QXA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE987x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+5.49 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9862QXA40XUMA1 Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2
TLE9862QXA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE986x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE92104232QXXUMA1 Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976
TLE92104232QXXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Part Status: Active
Fault Protection: Short Circuit
Supplier Device Package: PG-VQFN-48-29
Applications: DC Motors, General Purpose
Rds On (Typ): 40Ohm
Voltage - Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Analog, Logic, PWM, SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+2.75 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9185QXV33XUMA1 Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25
TLE9185QXV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+2.99 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9185QXV33XUMA1 Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25
TLE9185QXV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
auf Bestellung 9030 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.72 EUR
10+4.3 EUR
25+3.95 EUR
100+3.57 EUR
250+3.38 EUR
500+3.27 EUR
1000+3.18 EUR
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TLE9185QXXUMA1 Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f
Hersteller: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE9185QXXUMA1 Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f
Hersteller: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Current - Output: 250mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Multiphase
Supplier Device Package: PG-VQFN-48-29
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 28V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: SPI
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.85 EUR
10+5.01 EUR
25+4.54 EUR
100+4.03 EUR
250+3.79 EUR
500+3.65 EUR
1000+3.53 EUR
Mindestbestellmenge: 3 Stücke
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6EDL7141XUMA1 Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3
6EDL7141XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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6EDL7141XUMA1 Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3
6EDL7141XUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Supplier Device Package: PG-VQFN-48-78
Input Type: Non-Inverting
Voltage - Supply: 5.5V ~ 60V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.7 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.72 EUR
500+2.63 EUR
Mindestbestellmenge: 4 Stücke
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BGA7P320E6327XTSA1 Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423
BGA7P320E6327XTSA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-16-12
Test Frequency: 3.3GHz ~ 4.2GHz
P1dB: 27.8dBm
Noise Figure: 3.5dB
Gain: 34.4dB
Voltage - Supply: 3.15V ~ 3.45V
RF Type: 5G
Frequency: 3.3GHz ~ 4.2GHz
Mounting Type: Surface Mount
Package / Case: 16-WFDFN Exposed Pad
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRFS23N20DTRRP irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFS23N20DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Produkt ist nicht verfügbar
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BSC240N12NS3G INFNS15757-1.pdf?t.download=true&u=5oefqw
BSC240N12NS3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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SIDC81D60E6YX1SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIDC81D120F6YX1SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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DDB6U100N16RRBPSA1 Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af
DDB6U100N16RRBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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F411MR12W2M1B76BOMA1
F411MR12W2M1B76BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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