Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (133948) > Seite 438 nach 2233
Foto | Bezeichnung | Hersteller | Beschreibung |
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TLE9832QVXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
auf Bestellung 172500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9832QX | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
auf Bestellung 9900 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE98322QXXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE98322QVXUMA3 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9832QXXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE9832-2QX | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE98322QVXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE98322QVXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE98322QVXUMA2 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE98322QVXUMA3 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE9832-2QX | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE98322QXXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE9832QV | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE9832QVXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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TLE9832QVXUMA2 | Infineon Technologies |
Description: IC MOTOR DRIVER 48VQFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SSI, UART RAM Size: 3.25K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 27V Program Memory Type: FLASH (36kB) Core Processor: XC800 Supplier Device Package: PG-VQFN-48-31 Number of I/O: 11 DigiKey Programmable: Not Verified Grade: Automotive |
Produkt ist nicht verfügbar |
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TLE9832QXXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 48VQFN |
Produkt ist nicht verfügbar |
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PEB3065NV3.2-SLICOFI | Infineon Technologies | Description: SLICOFI SIGNAL PROCESSING SLIC |
auf Bestellung 11945 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB3065NV3.2SLICOFI | Infineon Technologies | Description: SLICOFI SIGNAL PROCESSING SLIC |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20666-24LTXI | Infineon Technologies |
Description: IC CAPSENSE AP 32K 2048B 48QFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6 Program Memory Type: FLASH (32kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (7x7) Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG7PH46UEP | Infineon Technologies |
Description: IGBT, 108A, 1200V, N-CHANNEL Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 45ns/410ns Switching Energy: 2.56mJ (on), 1.78mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 220 nC Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 469 W |
Produkt ist nicht verfügbar |
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FD900R12IP4DVBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
Produkt ist nicht verfügbar |
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IPP055N08NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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SN7002WH6433 | Infineon Technologies |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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TDA6170X | Infineon Technologies |
Description: IC SOUND RECEIVERS P-DSO28 Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Sound Receivers Supplier Device Package: P-DSO-28 Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TDA 6190T GEG | Infineon Technologies |
Description: IC MIXER/AMP DVB-IF PDSO-16 Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TDA 6192V | Infineon Technologies |
Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 30MHz ~ 65MHz RF Type: General Purpose Supplier Device Package: PG-VQFN-20 |
Produkt ist nicht verfügbar |
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IPI90N04S402BSAKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V TO263 |
Produkt ist nicht verfügbar |
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CY62148GN-45ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP II Packaging: Tray Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFN8478TR | Infineon Technologies |
Description: AUIRFN8478 - 20V-40V N-CHANNEL A Packaging: Bulk |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS149NK | Infineon Technologies | Description: BUFFER/INVERTER PERIPHL DRIVER |
Produkt ist nicht verfügbar |
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BTS149E3045ANTMA1 | Infineon Technologies | Description: BUFFER/INVERTER PERIPHL DRIVER |
Produkt ist nicht verfügbar |
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IAUS300N08S5N012TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 300A HDSOP-16-2 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V |
Produkt ist nicht verfügbar |
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IPDD60R105CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPDD60R105CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC0906NS | Infineon Technologies | Description: BSC0906 - 12V-300V N-CHANNEL POW |
Produkt ist nicht verfügbar |
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BSC0906NSE8189ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-34 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSZ009NE2LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 39A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC004NE2LS5ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2V @ 10mA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC004NE2LS5ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2V @ 10mA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V |
auf Bestellung 5411 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALPASCO2MINIBOARDTOBO1 | Infineon Technologies |
Description: EVAL BRD Packaging: Bulk Sensitivity: ±3% Interface: I2C, PWM, UART Voltage - Supply: 3.3V, 12V Sensor Type: Carbon Dioxide (CO2) Utilized IC / Part: PAS CO2 Supplied Contents: Board(s) Embedded: Yes, MCU |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALPASCO2SENSOR2GOTOBO1 | Infineon Technologies |
Description: EVAL BRD Packaging: Bulk Sensitivity: ±3% Interface: I2C, PWM, UART Voltage - Supply: 3.3V, 12V Sensor Type: Carbon Dioxide (CO2) Utilized IC / Part: PAS CO2 Supplied Contents: Board(s), Cable(s) Embedded: Yes, MCU Part Status: Active |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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IR35201MTRPBF | Infineon Technologies |
Description: IC CTRLR PWM MULTIPHASE 56QFN Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: Multiphase Controller Supplier Device Package: 56-QFN (7x7) Part Status: Active |
Produkt ist nicht verfügbar |
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IR35201MTRPBF | Infineon Technologies |
Description: IC CTRLR PWM MULTIPHASE 56QFN Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: Multiphase Controller Supplier Device Package: 56-QFN (7x7) Part Status: Active |
auf Bestellung 1014 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP330P10NMAKSA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 5.55mA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
auf Bestellung 416 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR192WH6327XTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 147000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR192WH6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT323-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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BCR 192 E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR192E6785HTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 104677 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR192E6327 | Infineon Technologies | Description: BIPOLAR DIGITAL TRANSISTOR |
Produkt ist nicht verfügbar |
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BCR 192F E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSFP-3 |
Produkt ist nicht verfügbar |
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BCR 192L3 E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW TSLP-3 |
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BCR 192T E6327 | Infineon Technologies | Description: TRANS PREBIAS PNP 250MW SC75 |
Produkt ist nicht verfügbar |
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IRDC3883 | Infineon Technologies |
Description: EVAL IR3883 Packaging: Box Voltage - Output: 3.3V Voltage - Input: 12V Current - Output: 3A Frequency - Switching: 800kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: IR3883 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
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FS300R12OE4PNOSA1 | Infineon Technologies | Description: IGBT MOD 1200V 600A 20MW |
Produkt ist nicht verfügbar |
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IPD079N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R600CPXKSA1 | Infineon Technologies |
Description: IPA60R600 - 600V COOLMOS N-CHANN Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V |
auf Bestellung 8500 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV99UE6327 | Infineon Technologies | Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
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DD340N22STIMHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 2200V BGPB50SB Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 330A Supplier Device Package: BG-PB50SB-1 Operating Temperature - Junction: 130°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A Current - Reverse Leakage @ Vr: 1 mA @ 2200 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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DD340N18SHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1800V BGPB50SB Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 330A Supplier Device Package: BG-PB50SB-1 Operating Temperature - Junction: -40°C ~ 135°C Voltage - DC Reverse (Vr) (Max): 1800 V Current - Reverse Leakage @ Vr: 1 mA @ 1800 V |
Produkt ist nicht verfügbar |
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BTS50015-1TMA | Infineon Technologies |
Description: BTS50015 - PROFET - SMART HIGH S Packaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-7 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 33A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-7-232 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
TLE9832QVXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
auf Bestellung 172500 Stücke:
Lieferzeit 10-14 Tag (e)TLE9832QX |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)TLE98322QXXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)TLE98322QVXUMA3 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)TLE9832QXXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE9832-2QX |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE98322QVXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE98322QVXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE98322QVXUMA2 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE98322QVXUMA3 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE9832-2QX |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE98322QXXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE9832QV |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE9832QVXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
TLE9832QVXUMA2 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 11
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 27V
Program Memory Type: FLASH (36kB)
Core Processor: XC800
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 11
DigiKey Programmable: Not Verified
Grade: Automotive
Produkt ist nicht verfügbar
TLE9832QXXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Description: IC MOTOR DRIVER 48VQFN
Produkt ist nicht verfügbar
PEB3065NV3.2-SLICOFI |
Hersteller: Infineon Technologies
Description: SLICOFI SIGNAL PROCESSING SLIC
Description: SLICOFI SIGNAL PROCESSING SLIC
auf Bestellung 11945 Stücke:
Lieferzeit 10-14 Tag (e)PEB3065NV3.2SLICOFI |
Hersteller: Infineon Technologies
Description: SLICOFI SIGNAL PROCESSING SLIC
Description: SLICOFI SIGNAL PROCESSING SLIC
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)CY8C20666-24LTXI |
Hersteller: Infineon Technologies
Description: IC CAPSENSE AP 32K 2048B 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC CAPSENSE AP 32K 2048B 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 337 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
85+ | 6.25 EUR |
IRG7PH46UEP |
Hersteller: Infineon Technologies
Description: IGBT, 108A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
Description: IGBT, 108A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
Produkt ist nicht verfügbar
FD900R12IP4DVBOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
IPP055N08NF2SAKMA1 |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.08 EUR |
50+ | 2.47 EUR |
100+ | 2.03 EUR |
SN7002WH6433 |
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
TDA6170X |
Hersteller: Infineon Technologies
Description: IC SOUND RECEIVERS P-DSO28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Sound Receivers
Supplier Device Package: P-DSO-28
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SOUND RECEIVERS P-DSO28
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Sound Receivers
Supplier Device Package: P-DSO-28
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TDA 6190T GEG |
Hersteller: Infineon Technologies
Description: IC MIXER/AMP DVB-IF PDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-16
DigiKey Programmable: Not Verified
Description: IC MIXER/AMP DVB-IF PDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TDA 6192V |
Hersteller: Infineon Technologies
Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 30MHz ~ 65MHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-20
Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 30MHz ~ 65MHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-20
Produkt ist nicht verfügbar
IPI90N04S402BSAKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V TO263
Description: MOSFET N-CH 40V TO263
Produkt ist nicht verfügbar
CY62148GN-45ZSXI |
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.94 EUR |
10+ | 8.17 EUR |
25+ | 8.01 EUR |
40+ | 7.95 EUR |
80+ | 7.14 EUR |
AUIRFN8478TR |
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
293+ | 1.66 EUR |
BTS149NK |
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Description: BUFFER/INVERTER PERIPHL DRIVER
Produkt ist nicht verfügbar
BTS149E3045ANTMA1 |
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Description: BUFFER/INVERTER PERIPHL DRIVER
Produkt ist nicht verfügbar
IAUS300N08S5N012TATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Produkt ist nicht verfügbar
IPDD60R105CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Produkt ist nicht verfügbar
IPDD60R105CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.8 EUR |
10+ | 7.38 EUR |
100+ | 5.97 EUR |
BSC0906NS |
Hersteller: Infineon Technologies
Description: BSC0906 - 12V-300V N-CHANNEL POW
Description: BSC0906 - 12V-300V N-CHANNEL POW
Produkt ist nicht verfügbar
BSC0906NSE8189ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Description: MOSFET N-CH 30V TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Produkt ist nicht verfügbar
BSZ009NE2LS5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.75 EUR |
BSC004NE2LS5ATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.82 EUR |
BSC004NE2LS5ATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
auf Bestellung 5411 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.19 EUR |
10+ | 3.48 EUR |
100+ | 2.77 EUR |
500+ | 2.34 EUR |
1000+ | 1.99 EUR |
2000+ | 1.89 EUR |
EVALPASCO2MINIBOARDTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 45.78 EUR |
EVALPASCO2SENSOR2GOTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 131.47 EUR |
IR35201MTRPBF |
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
IR35201MTRPBF |
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.84 EUR |
10+ | 9.79 EUR |
25+ | 9.34 EUR |
100+ | 8.11 EUR |
250+ | 7.74 EUR |
500+ | 7.06 EUR |
1000+ | 6.15 EUR |
IPP330P10NMAKSA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.54 EUR |
50+ | 6.77 EUR |
100+ | 5.8 EUR |
BCR192WH6327XTSA1 |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6571+ | 0.08 EUR |
BCR192WH6327 |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
BCR 192 E6327 |
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8013+ | 0.066 EUR |
BCR192E6785HTSA1 |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 104677 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13172+ | 0.033 EUR |
BCR192E6327 |
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
BCR 192F E6327 |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW TSFP-3
Description: TRANS PREBIAS PNP 250MW TSFP-3
Produkt ist nicht verfügbar
BCR 192L3 E6327 |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW TSLP-3
Description: TRANS PREBIAS PNP 250MW TSLP-3
Produkt ist nicht verfügbar
BCR 192T E6327 |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW SC75
Description: TRANS PREBIAS PNP 250MW SC75
Produkt ist nicht verfügbar
IRDC3883 |
Hersteller: Infineon Technologies
Description: EVAL IR3883
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 3A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3883
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL IR3883
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 3A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3883
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
FS300R12OE4PNOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Description: IGBT MOD 1200V 600A 20MW
Produkt ist nicht verfügbar
IPD079N06L3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.72 EUR |
5000+ | 0.69 EUR |
IPA60R600CPXKSA1 |
Hersteller: Infineon Technologies
Description: IPA60R600 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Description: IPA60R600 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
451+ | 1.1 EUR |
BAV99UE6327 |
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
DD340N22STIMHPSA1 |
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Description: DIODE MOD GP 2200V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 166.92 EUR |
DD340N18SHPSA1 |
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Description: DIODE MOD GP 1800V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Produkt ist nicht verfügbar
BTS50015-1TMA |
Hersteller: Infineon Technologies
Description: BTS50015 - PROFET - SMART HIGH S
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: BTS50015 - PROFET - SMART HIGH S
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar