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C505L4EMCCFXQMA1 Infineon Technologies Description: IC MCU 8BIT 32KB OTP 44MQFP
DigiKey Programmable: Not Verified
Number of I/O: 34
Supplier Device Package: PG-MQFP-44-2
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Tray
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C505L4EMCCFXUMA1 Infineon Technologies Description: IC MCU 8BIT 32KB OTP 44MQFP
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SAB 82525 H V2.2 SAB 82525 H V2.2 Infineon Technologies SAB%2CSAF82525%2C82526.pdf Description: IC INTERFACE SPECIALIZED 44MQFP
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAB 82526 H V2.2 SAB 82526 H V2.2 Infineon Technologies SAB%2CSAF82525%2C82526.pdf Description: IC INTERFACE SPECIALIZED 44MQFP
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPA65R190DEXKSA1 Infineon Technologies Description: MOSFET
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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SAFC161OL25MHA SAFC161OL25MHA Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT MICROCONTROLLER
Number of I/O: 63
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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21-0065PBF Infineon Technologies IP1827PBF.pdf Description: IC REG BUCK ADJ 25A 17LGA
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: 17-LGA (7.65x7.65)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 25A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 17-LLGA
Packaging: Tube
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IRDCIP1827 Infineon Technologies irdcip1827.pdf Description: BOARD EVAL RDK EVAL IP1827
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IGC03T60TEX7SA2 Infineon Technologies Description: IGBT 600V 3A WAFER
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IPP80R600P7 Infineon Technologies Infineon-SPP_A_I20N65C3-DS-v03_00-en.pdf?fileId=db3a304314dca389011536a41121152a Description: IPP80R600 - 800V COOLMOS N-CHANN
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IPP80R1K2P7 IPP80R1K2P7 Infineon Technologies INFN-S-A0004583972-1.pdf?t.download=true&u=5oefqw Description: IPP80R1K2 - 800V COOLMOS N-CHANN
Part Status: Active
Packaging: Bulk
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IPP80R1K4P7 IPP80R1K4P7 Infineon Technologies INFN-S-A0004583403-1.pdf?t.download=true&u=5oefqw Description: IPP80R1K4 - 800V COOLMOS N-CHANN
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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IPP80R750P7 Infineon Technologies Description: IPP80R750 - 800V COOLMOS N-CHANN
Packaging: Bulk
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IPI12CNE8N G IPI12CNE8N G Infineon Technologies IPx12CNE8N_Rev1.06.pdf Description: MOSFET N-CH 85V 67A TO262-3
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BC 856B E6433 BC 856B E6433 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 65V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLI4970-D050T4 TLI4970-D050T4 Infineon Technologies Description: TLI4970 - MAGNETIC CURRENT SENSO
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TLI4970-D050T5XUMA1 TLI4970-D050T5XUMA1 Infineon Technologies INFN-S-A0002363151-1.pdf?t.download=true&u=ovmfp3 Description: MAGNETIC SWITCH CURRENT SENSOR
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TLI4970D050T4 TLI4970D050T4 Infineon Technologies Description: MAGNETIC SWITCH CURRENT SENSOR
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TLI4970050 Infineon Technologies Description: DEV KIT
Part Status: Active
Sensing Range: 50A
Embedded: Yes, MCU, 32-Bit
Supplied Contents: Board(s)
Utilized IC / Part: TLI4970-D050T4, XMC1100
Sensor Type: Current Sensor
Voltage - Supply: 3.1V ~ 3.5V
Interface: Serial, SPI
Packaging: Bulk
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TLI4970D050T4XUMA1 TLI4970D050T4XUMA1 Infineon Technologies TLI4970_D050T4_Rev1.2_3-21-19.pdf Description: SENSOR CURRENT HALL 50A 8TISON
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Bidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
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TLI4970D025T4XUMA1 TLI4970D025T4XUMA1 Infineon Technologies TLI4970_D025T4_Rev1.2_3-21-19.pdf Description: SENSOR CURRENT HALL 25A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 25A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±2%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Unidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
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TLI4970D050T5XUMA1 TLI4970D050T5XUMA1 Infineon Technologies TLI4970_D050T5_Rev1.2_3-21-19.pdf Description: SENSOR CURRENT HALL 50A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Unidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
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SHIELDBTS500251TEATOBO1 SHIELDBTS500251TEATOBO1 Infineon Technologies infineon-bts50025-1tea-demo-board-arduino-shield-usermanual-en.pdf Description: SHIELD_BTS50025-1TEA
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTS50025-1TEA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
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IAUA250N04S6N007AUMA1 IAUA250N04S6N007AUMA1 Infineon Technologies Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
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IAUA250N04S6N007AUMA1 IAUA250N04S6N007AUMA1 Infineon Technologies Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
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BSS127IXTSA1 BSS127IXTSA1 Infineon Technologies Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
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BSS127IXTSA1 BSS127IXTSA1 Infineon Technologies Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
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50+0.43 EUR
69+0.31 EUR
100+0.26 EUR
500+0.2 EUR
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BTS244ZE3062ANTMA1 BTS244ZE3062ANTMA1 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
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IR3513MTRPBF IR3513MTRPBF Infineon Technologies IR3513.pdf Description: IC XPHASE3 CONTROL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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10+6.33 EUR
25+5.94 EUR
100+5.64 EUR
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AUIR3242SBOARDB2BTOBO1 AUIR3242SBOARDB2BTOBO1 Infineon Technologies PdfFile_206876.pdf Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
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EVALM3CM615PNTOBO2 Infineon Technologies Description: EVAL BOARD FOR IFCM15P60GD
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BCR119SH6327 Infineon Technologies INFNS11573-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BCR119S Infineon Technologies INFNS17179-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BCR119SH6327XTSA1 BCR119SH6327XTSA1 Infineon Technologies bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BCR 114T E6327 BCR 114T E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW SC75
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BCR 114L3 E6327 BCR 114L3 E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 114F E6327 BCR 114F E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSFP-3
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CY8C20045-24LKXIT CY8C20045-24LKXIT Infineon Technologies Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA89502VH6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16350 Stücke:
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TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
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TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
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IGI60F1414A1LAUMA1 IGI60F1414A1LAUMA1 Infineon Technologies Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3 Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMC302AF064XUMA1 IMC302AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
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IMC301AF064XUMA1 IMC301AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
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SAF-XC886CM-6FFI 5V AC SAF-XC886CM-6FFI 5V AC Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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500+1.95 EUR
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ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
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ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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DD800S17H4_B2 Infineon Technologies INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw Description: DDXS17F - RECTIFIER DIODE MODULE
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DD800S17HA_B2 Infineon Technologies INFNS28235-1.pdf?t.download=true&u=ovmfp3 Description: RECTIFIER DIODE MODULE
Packaging: Bulk
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AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
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AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BAT54-04E6327 BAT54-04E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
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BAT54-06E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
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BAT54-05E6327 BAT54-05E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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C505L4EMCCFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB OTP 44MQFP
DigiKey Programmable: Not Verified
Number of I/O: 34
Supplier Device Package: PG-MQFP-44-2
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Tray
Produkt ist nicht verfügbar
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C505L4EMCCFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB OTP 44MQFP
Produkt ist nicht verfügbar
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SAB 82525 H V2.2 SAB%2CSAF82525%2C82526.pdf
SAB 82525 H V2.2
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44MQFP
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAB 82526 H V2.2 SAB%2CSAF82525%2C82526.pdf
SAB 82526 H V2.2
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44MQFP
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPA65R190DEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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SAFC161OL25MHA INFNS11060-1.pdf?t.download=true&u=5oefqw
SAFC161OL25MHA
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Number of I/O: 63
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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21-0065PBF IP1827PBF.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 25A 17LGA
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: 17-LGA (7.65x7.65)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 25A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 17-LLGA
Packaging: Tube
Produkt ist nicht verfügbar
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IRDCIP1827 irdcip1827.pdf
Hersteller: Infineon Technologies
Description: BOARD EVAL RDK EVAL IP1827
Produkt ist nicht verfügbar
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IGC03T60TEX7SA2
Hersteller: Infineon Technologies
Description: IGBT 600V 3A WAFER
Produkt ist nicht verfügbar
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IPP80R600P7 Infineon-SPP_A_I20N65C3-DS-v03_00-en.pdf?fileId=db3a304314dca389011536a41121152a
Hersteller: Infineon Technologies
Description: IPP80R600 - 800V COOLMOS N-CHANN
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
321+1.86 EUR
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IPP80R1K2P7 INFN-S-A0004583972-1.pdf?t.download=true&u=5oefqw
IPP80R1K2P7
Hersteller: Infineon Technologies
Description: IPP80R1K2 - 800V COOLMOS N-CHANN
Part Status: Active
Packaging: Bulk
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
480+1.2 EUR
Mindestbestellmenge: 480 Stücke
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IPP80R1K4P7 INFN-S-A0004583403-1.pdf?t.download=true&u=5oefqw
IPP80R1K4P7
Hersteller: Infineon Technologies
Description: IPP80R1K4 - 800V COOLMOS N-CHANN
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPP80R750P7
Hersteller: Infineon Technologies
Description: IPP80R750 - 800V COOLMOS N-CHANN
Packaging: Bulk
Produkt ist nicht verfügbar
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IPI12CNE8N G IPx12CNE8N_Rev1.06.pdf
IPI12CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 67A TO262-3
Produkt ist nicht verfügbar
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BC 856B E6433 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC 856B E6433
Hersteller: Infineon Technologies
Description: TRANS PNP 65V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLI4970-D050T4
TLI4970-D050T4
Hersteller: Infineon Technologies
Description: TLI4970 - MAGNETIC CURRENT SENSO
Produkt ist nicht verfügbar
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TLI4970-D050T5XUMA1 INFN-S-A0002363151-1.pdf?t.download=true&u=ovmfp3
TLI4970-D050T5XUMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH CURRENT SENSOR
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
57+10.58 EUR
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TLI4970D050T4
TLI4970D050T4
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH CURRENT SENSOR
auf Bestellung 384 Stücke:
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AnzahlPrivatkunde
48+12.07 EUR
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TLI4970050
Hersteller: Infineon Technologies
Description: DEV KIT
Part Status: Active
Sensing Range: 50A
Embedded: Yes, MCU, 32-Bit
Supplied Contents: Board(s)
Utilized IC / Part: TLI4970-D050T4, XMC1100
Sensor Type: Current Sensor
Voltage - Supply: 3.1V ~ 3.5V
Interface: Serial, SPI
Packaging: Bulk
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TLI4970D050T4XUMA1 TLI4970_D050T4_Rev1.2_3-21-19.pdf
TLI4970D050T4XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Bidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
auf Bestellung 46099 Stücke:
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AnzahlPrivatkunde
44+13.7 EUR
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TLI4970D025T4XUMA1 TLI4970_D025T4_Rev1.2_3-21-19.pdf
TLI4970D025T4XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 25A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±2%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Unidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 144 Stücke:
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AnzahlPrivatkunde
52+11.58 EUR
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TLI4970D050T5XUMA1 TLI4970_D050T5_Rev1.2_3-21-19.pdf
TLI4970D050T5XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Unidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 1463 Stücke:
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AnzahlPrivatkunde
52+11.58 EUR
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SHIELDBTS500251TEATOBO1 infineon-bts50025-1tea-demo-board-arduino-shield-usermanual-en.pdf
SHIELDBTS500251TEATOBO1
Hersteller: Infineon Technologies
Description: SHIELD_BTS50025-1TEA
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTS50025-1TEA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+120.21 EUR
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IAUA250N04S6N007AUMA1
IAUA250N04S6N007AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUA250N04S6N007AUMA1
IAUA250N04S6N007AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
BSS127IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
BSS127IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 4798 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
69+0.31 EUR
100+0.26 EUR
500+0.2 EUR
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BTS244ZE3062ANTMA1 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062ANTMA1
Hersteller: Infineon Technologies
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
670+0.94 EUR
Mindestbestellmenge: 670 Stücke
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IR3513MTRPBF IR3513.pdf
IR3513MTRPBF
Hersteller: Infineon Technologies
Description: IC XPHASE3 CONTROL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.44 EUR
10+6.33 EUR
25+5.94 EUR
100+5.64 EUR
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AUIR3242SBOARDB2BTOBO1 PdfFile_206876.pdf
AUIR3242SBOARDB2BTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+304.19 EUR
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EVALM3CM615PNTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IFCM15P60GD
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+233.69 EUR
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BCR119SH6327 INFNS11573-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR119S INFNS17179-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR119SH6327XTSA1 bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
BCR119SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
auf Bestellung 17800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5352+0.12 EUR
Mindestbestellmenge: 5352 Stücke
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BCR 114T E6327 BCR114%20(2003).pdf
BCR 114T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Produkt ist nicht verfügbar
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BCR 114L3 E6327 BCR114%20(2003).pdf
BCR 114L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Produkt ist nicht verfügbar
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BCR 114F E6327 BCR114%20(2003).pdf
BCR 114F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Produkt ist nicht verfügbar
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CY8C20045-24LKXIT Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign
CY8C20045-24LKXIT
Hersteller: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA89502VH6327XTSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5106+0.13 EUR
Mindestbestellmenge: 5106 Stücke
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TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.78 EUR
5+5.16 EUR
10+4.93 EUR
25+4.65 EUR
50+4.46 EUR
100+4.28 EUR
500+3.94 EUR
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IGI60F1414A1LAUMA1 Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3
IGI60F1414A1LAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMC302AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC302AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 235 Stücke:
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AnzahlPrivatkunde
2+12.86 EUR
10+11.61 EUR
25+11.08 EUR
100+9.62 EUR
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IMC301AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC301AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 1567 Stücke:
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AnzahlPrivatkunde
3+10.33 EUR
10+7.9 EUR
25+7.29 EUR
100+6.64 EUR
250+6.32 EUR
500+6.13 EUR
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SAF-XC886CM-6FFI 5V AC Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
SAF-XC886CM-6FFI 5V AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.37 EUR
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ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 6987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.39 EUR
10+3.03 EUR
100+2.37 EUR
500+1.95 EUR
1000+1.55 EUR
2000+1.44 EUR
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ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.21 EUR
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ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10539 Stücke:
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7+3.45 EUR
10+2.33 EUR
100+1.65 EUR
500+1.36 EUR
1000+1.25 EUR
2000+1.21 EUR
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+1.11 EUR
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 10503 Stücke:
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6+3.94 EUR
10+2.51 EUR
50+1.89 EUR
100+1.7 EUR
500+1.34 EUR
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ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.14 EUR
10+3.99 EUR
100+2.76 EUR
500+2.25 EUR
1000+2.07 EUR
2000+1.98 EUR
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DD800S17H4_B2 INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
auf Bestellung 112 Stücke:
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1+1678.2 EUR
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DD800S17HA_B2 INFNS28235-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Packaging: Bulk
auf Bestellung 18 Stücke:
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1+1047.58 EUR
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AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4800+3.27 EUR
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AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.92 EUR
10+5.9 EUR
100+4.18 EUR
500+3.45 EUR
1000+3.27 EUR
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BAT54-04E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-04E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 45000 Stücke:
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AnzahlPrivatkunde
5602+0.098 EUR
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BAT54-06E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
auf Bestellung 163000 Stücke:
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AnzahlPrivatkunde
5170+0.13 EUR
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BAT54-05E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-05E6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 41151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5602+0.1 EUR
Mindestbestellmenge: 5602 Stücke
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