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IPD70P04P409ATMA2 IPD70P04P409ATMA2 Infineon Technologies Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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2500+0.83 EUR
5000+0.77 EUR
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IPD70P04P409ATMA2 IPD70P04P409ATMA2 Infineon Technologies Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.94 EUR
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IPB180P04P403ATMA2 IPB180P04P403ATMA2 Infineon Technologies Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
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IPB180P04P403ATMA2 IPB180P04P403ATMA2 Infineon Technologies Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
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CY8C4146LQI-S423 CY8C4146LQI-S423 Infineon Technologies infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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100+3.47 EUR
490+3.18 EUR
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1470+3.05 EUR
2940+2.98 EUR
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IPD60R460CEATMA1 IPD60R460CEATMA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: MOSFET N-CH 600V 9.1A TO252-3
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ISC019N04NM5ATMA1 ISC019N04NM5ATMA1 Infineon Technologies Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
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ISC019N04NM5ATMA1 ISC019N04NM5ATMA1 Infineon Technologies Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
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500+0.74 EUR
1000+0.67 EUR
2000+0.62 EUR
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DDB6U145N16LHOSA1 DDB6U145N16LHOSA1 Infineon Technologies Infineon-DDB6U145N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314b2f53ff Description: DIODE MODULE GP 1600V
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Technology: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Diode Configuration: 3 Independent
Produkt ist nicht verfügbar
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CY8C20466A-24LQXI CY8C20466A-24LQXI Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE PSOC 32K 32QFN
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8C3445LTI-079 CY8C3445LTI-079 Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
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IRS2890DSPBF IRS2890DSPBF Infineon Technologies Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
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ACCESSORY21392NOSA1 Infineon Technologies Description: ACCESSORY 21392NOSA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKFW40N65DH5XKSA1 IKFW40N65DH5XKSA1 Infineon Technologies Infineon-IKFW40N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972f3891f03 Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
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SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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100+1.3 EUR
500+1.02 EUR
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IMZA65R057M1HXKSA1 IMZA65R057M1HXKSA1 Infineon Technologies Infineon-IMZA65R057M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c74563c6b Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
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IQE050N08NM5ATMA1 IQE050N08NM5ATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Produkt ist nicht verfügbar
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IQE050N08NM5ATMA1 IQE050N08NM5ATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 529 Stücke:
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100+2.37 EUR
500+1.92 EUR
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IQE065N10NM5ATMA1 IQE065N10NM5ATMA1 Infineon Technologies Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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5000+1.54 EUR
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IQE065N10NM5ATMA1 IQE065N10NM5ATMA1 Infineon Technologies Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 6198 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.24 EUR
10+3.41 EUR
100+2.37 EUR
500+1.92 EUR
1000+1.88 EUR
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ISC022N10NM6ATMA1 ISC022N10NM6ATMA1 Infineon Technologies Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91 Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+3.01 EUR
Mindestbestellmenge: 5000 Stücke
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ISC022N10NM6ATMA1 ISC022N10NM6ATMA1 Infineon Technologies Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91 Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
auf Bestellung 12134 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.93 EUR
10+5.44 EUR
100+4.64 EUR
500+3.41 EUR
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IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 Infineon Technologies Infineon-IQE008N03LM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c822c327f74 Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
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IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 Infineon Technologies Infineon-IQE008N03LM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c822c327f74 Description: TRENCH <= 40V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC019N08NS5ATMA1 BSC019N08NS5ATMA1 Infineon Technologies Infineon-BSC019N08NS5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178edf8c9466c45 Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BSC019N08NS5ATMA1 BSC019N08NS5ATMA1 Infineon Technologies Infineon-BSC019N08NS5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178edf8c9466c45 Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4866 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.25 EUR
10+5.48 EUR
100+3.91 EUR
500+3.24 EUR
1000+3.13 EUR
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ISC009N06LM5ATMA1 ISC009N06LM5ATMA1 Infineon Technologies Infineon-ISC009N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f3b8c096992 Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ISC009N06LM5ATMA1 ISC009N06LM5ATMA1 Infineon Technologies Infineon-ISC009N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f3b8c096992 Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 2223 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.12 EUR
10+6.75 EUR
100+4.83 EUR
500+4.01 EUR
1000+3.76 EUR
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TLE9251VLEXUMA1 TLE9251VLEXUMA1 Infineon Technologies Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.1 EUR
10000+1.08 EUR
Mindestbestellmenge: 5000 Stücke
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TLE9251VLEXUMA1 TLE9251VLEXUMA1 Infineon Technologies Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 14525 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
11+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.16 EUR
2500+1.12 EUR
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TLE9250VLEXUMA1 TLE9250VLEXUMA1 Infineon Technologies Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.04 EUR
10000+1.02 EUR
Mindestbestellmenge: 5000 Stücke
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TLE9250VLEXUMA1 TLE9250VLEXUMA1 Infineon Technologies Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15180 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
12+1.57 EUR
25+1.43 EUR
100+1.26 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.1 EUR
2500+1.06 EUR
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TLE8457CLEXUMA1 TLE8457CLEXUMA1 Infineon Technologies Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
11+1.66 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.21 EUR
1000+1.17 EUR
2500+1.12 EUR
Mindestbestellmenge: 8 Stücke
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TLE8457ALEXUMA2 Infineon Technologies Infineon-TLE8457AB-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LIN
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 28V, 5.5V ~ 40V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY96384RSCPMC-GS-134E2-ND CY96384RSCPMC-GS-134E2-ND Infineon Technologies Description: IC MCU 16BIT 128KB MROM 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91213APMC-GS-134K5E1 MB91213APMC-GS-134K5E1 Infineon Technologies Description: IC MCU 32BIT 544KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 118
Produkt ist nicht verfügbar
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CY96F385RSBPMC-GS134UJE2 CY96F385RSBPMC-GS134UJE2 Infineon Technologies CY96380.pdf Description: IC MCU 16BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Discontinued at Digi-Key
Number of I/O: 94
Produkt ist nicht verfügbar
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MB91248PFV-GS-134K5E1 MB91248PFV-GS-134K5E1 Infineon Technologies Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
Produkt ist nicht verfügbar
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TD5116F-TDA5220_868_10 Infineon Technologies Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: TDA5220, TDK5116F
Frequency: 868MHz
Type: Transmitter, Receiver
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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TLE5041PLUSCXAMA1 TLE5041PLUSCXAMA1 Infineon Technologies Infineon-TLE5041PLUSC-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016632437f574f75 Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Magnetoresistive
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLE5041PLUSCXAMA1 TLE5041PLUSCXAMA1 Infineon Technologies Infineon-TLE5041PLUSC-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016632437f574f75 Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Magnetoresistive
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
auf Bestellung 1379 Stücke:
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6+3 EUR
10+2.86 EUR
25+2.69 EUR
50+2.58 EUR
100+2.48 EUR
500+2.27 EUR
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TT160N16SOFHPSA1 TT160N16SOFHPSA1 Infineon Technologies Infineon-TT160N16SOF-DS-v03_02-EN.pdf?fileId=5546d46254bdc4f50154dd9865532d29 Description: SCR MODULE 1.6KV 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.6 kV
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1+85.68 EUR
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TT160N18SOFHPSA1 TT160N18SOFHPSA1 Infineon Technologies TT160N18SOF.pdf Description: SCR MODULE 1.8KV 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.8 kV
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T160N18BOFXPSA1 Infineon Technologies T160N.pdf Description: SCR MODUL 1.9KV 300A NONSTAND
Packaging: Tray
Package / Case: Nonstandard
Mounting Type: Screw Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.9 kV
Produkt ist nicht verfügbar
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BGSX28MA18E6327XTSA1 BGSX28MA18E6327XTSA1 Infineon Technologies BGSX28MA18.pdf Description: IC RF SWITCH DP3T 3.8GHZ ATSLP18
Packaging: Bulk
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP3T
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
Part Status: Obsolete
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IR3503MTRPBF IR3503MTRPBF Infineon Technologies IR3503.pdf Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
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IR3503MTRPBF IR3503MTRPBF Infineon Technologies IR3503.pdf Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
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CY7C63903-PVXC CY7C63903-PVXC Infineon Technologies CY7C63310%2C%20638xx%2C%20639xx.pdf Description: IC USB PERIPHERAL CTRLR 28SSOP
Packaging: Bulk
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSC0924NDIATMA1 BSC0924NDIATMA1 Infineon Technologies Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5 Description: MOSFET 2N-CH 30V 17A/32A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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BSC0993NDATMA1 BSC0993NDATMA1 Infineon Technologies Infineon-BSC0993ND-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598dddfb2c616c Description: MOSFET 2N-CH 17A TISON8
Part Status: Not For New Designs
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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BSC096N10LS5ATMA1 BSC096N10LS5ATMA1 Infineon Technologies Infineon-BSC096N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bdb78171e20a7 Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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BSC096N10LS5ATMA1 BSC096N10LS5ATMA1 Infineon Technologies Infineon-BSC096N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bdb78171e20a7 Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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TLS125D0EJXUMA1 TLS125D0EJXUMA1 Infineon Technologies Infineon-TLS125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba922605737e Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 40V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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TLS125D0EJXUMA1 TLS125D0EJXUMA1 Infineon Technologies Infineon-TLS125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba922605737e Description: IC REG LINEAR POS ADJ 8DSO-52
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-52
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Part Status: Active
PSRR: 80dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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XMC4400F100K512ABXUMA1 XMC4400F100K512ABXUMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Discontinued at Digi-Key
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233L32F200NACKXUMA1 TC233L32F200NACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233L32F200NACKXUMA1 TC233L32F200NACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR3806TRL AUIRFR3806TRL Infineon Technologies auirfr3806.pdf?fileId=5546d462533600a4015355b56f981482 Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
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AUIRFR3806TRL AUIRFR3806TRL Infineon Technologies auirfr3806.pdf?fileId=5546d462533600a4015355b56f981482 Description: MOSFET N-CH 60V 43A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD70P04P409ATMA2 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
IPD70P04P409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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AnzahlPreis
2500+0.83 EUR
5000+0.77 EUR
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IPD70P04P409ATMA2 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
IPD70P04P409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IPB180P04P403ATMA2 Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e
IPB180P04P403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
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AnzahlPreis
1000+2.71 EUR
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IPB180P04P403ATMA2 Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e
IPB180P04P403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
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3+7.69 EUR
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CY8C4146LQI-S423 infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
CY8C4146LQI-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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4+5.56 EUR
10+4.19 EUR
25+3.85 EUR
100+3.47 EUR
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IPD60R460CEATMA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPD60R460CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO252-3
Produkt ist nicht verfügbar
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ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
ISC019N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.56 EUR
Mindestbestellmenge: 5000 Stücke
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ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
ISC019N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 10433 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.25 EUR
13+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
2000+0.62 EUR
Mindestbestellmenge: 8 Stücke
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DDB6U145N16LHOSA1 Infineon-DDB6U145N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314b2f53ff
DDB6U145N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Technology: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Diode Configuration: 3 Independent
Produkt ist nicht verfügbar
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CY8C20466A-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20466A-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 32K 32QFN
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.29 EUR
10+1.94 EUR
25+1.8 EUR
100+1.61 EUR
Mindestbestellmenge: 8 Stücke
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CY8C3445LTI-079 download
CY8C3445LTI-079
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+13.45 EUR
Mindestbestellmenge: 42 Stücke
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IRS2890DSPBF Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4
IRS2890DSPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
auf Bestellung 5460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
159+2.83 EUR
Mindestbestellmenge: 159 Stücke
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ACCESSORY21392NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY 21392NOSA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKFW40N65DH5XKSA1 Infineon-IKFW40N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972f3891f03
IKFW40N65DH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.14 EUR
30+6.32 EUR
120+5.25 EUR
Mindestbestellmenge: 2 Stücke
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.74 EUR
5000+0.7 EUR
Mindestbestellmenge: 2500 Stücke
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 17082 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.03 EUR
10+1.93 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 6 Stücke
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IMZA65R057M1HXKSA1 Infineon-IMZA65R057M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c74563c6b
IMZA65R057M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
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IQE050N08NM5ATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IQE050N08NM5ATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 529 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.23 EUR
10+3.41 EUR
100+2.37 EUR
500+1.92 EUR
Mindestbestellmenge: 4 Stücke
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IQE065N10NM5ATMA1 Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae
IQE065N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.54 EUR
Mindestbestellmenge: 5000 Stücke
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IQE065N10NM5ATMA1 Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae
IQE065N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 6198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.24 EUR
10+3.41 EUR
100+2.37 EUR
500+1.92 EUR
1000+1.88 EUR
Mindestbestellmenge: 4 Stücke
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ISC022N10NM6ATMA1 Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91
ISC022N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+3.01 EUR
Mindestbestellmenge: 5000 Stücke
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ISC022N10NM6ATMA1 Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91
ISC022N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
auf Bestellung 12134 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.93 EUR
10+5.44 EUR
100+4.64 EUR
500+3.41 EUR
Mindestbestellmenge: 3 Stücke
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IQE008N03LM5ATMA1 Infineon-IQE008N03LM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c822c327f74
IQE008N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IQE008N03LM5ATMA1 Infineon-IQE008N03LM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c822c327f74
IQE008N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC019N08NS5ATMA1 Infineon-BSC019N08NS5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178edf8c9466c45
BSC019N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC019N08NS5ATMA1 Infineon-BSC019N08NS5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178edf8c9466c45
BSC019N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.25 EUR
10+5.48 EUR
100+3.91 EUR
500+3.24 EUR
1000+3.13 EUR
Mindestbestellmenge: 3 Stücke
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ISC009N06LM5ATMA1 Infineon-ISC009N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f3b8c096992
ISC009N06LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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ISC009N06LM5ATMA1 Infineon-ISC009N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f3b8c096992
ISC009N06LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A/348A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 2223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.12 EUR
10+6.75 EUR
100+4.83 EUR
500+4.01 EUR
1000+3.76 EUR
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TLE9251VLEXUMA1 Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b
TLE9251VLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
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AnzahlPreis
5000+1.1 EUR
10000+1.08 EUR
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TLE9251VLEXUMA1 Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b
TLE9251VLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 30 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 14525 Stücke:
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AnzahlPreis
8+2.25 EUR
11+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.16 EUR
2500+1.12 EUR
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TLE9250VLEXUMA1 Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972
TLE9250VLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.04 EUR
10000+1.02 EUR
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TLE9250VLEXUMA1 Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972
TLE9250VLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15180 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
12+1.57 EUR
25+1.43 EUR
100+1.26 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.1 EUR
2500+1.06 EUR
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TLE8457CLEXUMA1 Infineon-TLE8457CD-DS-v01_10-EN.pdf?fileId=5546d462689a790c0168a1d53be462be
TLE8457CLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.25 EUR
11+1.66 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.21 EUR
1000+1.17 EUR
2500+1.12 EUR
Mindestbestellmenge: 8 Stücke
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TLE8457ALEXUMA2 Infineon-TLE8457AB-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Part Status: Active
Receiver Hysteresis: 200 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LIN
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 28V, 5.5V ~ 40V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY96384RSCPMC-GS-134E2-ND
CY96384RSCPMC-GS-134E2-ND
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91213APMC-GS-134K5E1
MB91213APMC-GS-134K5E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 118
Produkt ist nicht verfügbar
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CY96F385RSBPMC-GS134UJE2 CY96380.pdf
CY96F385RSBPMC-GS134UJE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Discontinued at Digi-Key
Number of I/O: 94
Produkt ist nicht verfügbar
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MB91248PFV-GS-134K5E1
MB91248PFV-GS-134K5E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
Produkt ist nicht verfügbar
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TD5116F-TDA5220_868_10
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: TDA5220, TDK5116F
Frequency: 868MHz
Type: Transmitter, Receiver
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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TLE5041PLUSCXAMA1 Infineon-TLE5041PLUSC-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016632437f574f75
TLE5041PLUSCXAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Magnetoresistive
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
Produkt ist nicht verfügbar
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TLE5041PLUSCXAMA1 Infineon-TLE5041PLUSC-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016632437f574f75
TLE5041PLUSCXAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Magnetoresistive
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3 EUR
10+2.86 EUR
25+2.69 EUR
50+2.58 EUR
100+2.48 EUR
500+2.27 EUR
Mindestbestellmenge: 6 Stücke
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TT160N16SOFHPSA1 Infineon-TT160N16SOF-DS-v03_02-EN.pdf?fileId=5546d46254bdc4f50154dd9865532d29
TT160N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.6 kV
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+85.68 EUR
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TT160N18SOFHPSA1 TT160N18SOF.pdf
TT160N18SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T160N18BOFXPSA1 T160N.pdf
Hersteller: Infineon Technologies
Description: SCR MODUL 1.9KV 300A NONSTAND
Packaging: Tray
Package / Case: Nonstandard
Mounting Type: Screw Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.9 kV
Produkt ist nicht verfügbar
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BGSX28MA18E6327XTSA1 BGSX28MA18.pdf
BGSX28MA18E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DP3T 3.8GHZ ATSLP18
Packaging: Bulk
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP3T
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
Part Status: Obsolete
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
609+0.76 EUR
Mindestbestellmenge: 609 Stücke
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IR3503MTRPBF IR3503.pdf
IR3503MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3503MTRPBF IR3503.pdf
IR3503MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
auf Bestellung 2713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
115+4.37 EUR
Mindestbestellmenge: 115 Stücke
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CY7C63903-PVXC CY7C63310%2C%20638xx%2C%20639xx.pdf
CY7C63903-PVXC
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 28SSOP
Packaging: Bulk
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 28-SSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 5303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
247+2.06 EUR
Mindestbestellmenge: 247 Stücke
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BSC0924NDIATMA1 Infineon-BSC0924NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceae245448f5
BSC0924NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/32A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 74634 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.7 EUR
Mindestbestellmenge: 7 Stücke
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BSC0993NDATMA1 Infineon-BSC0993ND-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598dddfb2c616c
BSC0993NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 17A TISON8
Part Status: Not For New Designs
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9957 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.38 EUR
12+1.54 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.72 EUR
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BSC096N10LS5ATMA1 Infineon-BSC096N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bdb78171e20a7
BSC096N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.6 EUR
Mindestbestellmenge: 5000 Stücke
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BSC096N10LS5ATMA1 Infineon-BSC096N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bdb78171e20a7
BSC096N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 9256 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.69 EUR
10+2.32 EUR
25+2.19 EUR
100+2.01 EUR
250+1.9 EUR
500+1.82 EUR
1000+1.75 EUR
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TLS125D0EJXUMA1 Infineon-TLS125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba922605737e
TLS125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 40V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.19 EUR
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TLS125D0EJXUMA1 Infineon-TLS125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba922605737e
TLS125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-52
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Part Status: Active
PSRR: 80dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 8449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.62 EUR
10+1.93 EUR
25+1.75 EUR
100+1.56 EUR
250+1.47 EUR
500+1.41 EUR
1000+1.37 EUR
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XMC4400F100K512ABXUMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4400F100K512ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Discontinued at Digi-Key
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233L32F200NACKXUMA1 Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233L32F200NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC233L32F200NACKXUMA1 Infineon-TC23xAC_DS-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233L32F200NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR3806TRL auirfr3806.pdf?fileId=5546d462533600a4015355b56f981482
AUIRFR3806TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFR3806TRL auirfr3806.pdf?fileId=5546d462533600a4015355b56f981482
AUIRFR3806TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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