Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (135289) > Seite 447 nach 2255

Wählen Sie Seite:   [  << Vorherige Seite ]  1 225 442 443 444 445 446 447 448 449 450 451 452 675 900 1125 1350 1575 1800 2025 2250 2255  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
BGA7P320E6327XTSA1 Infineon Technologies Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423 Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
Part Status: Active
Produkt ist nicht verfügbar
IRFS23N20DTRRP IRFS23N20DTRRP Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
BSC240N12NS3G BSC240N12NS3G Infineon Technologies INFNS15757-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
SIDC81D60E6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
SIDC81D120F6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
DDB6U100N16RRBPSA1 DDB6U100N16RRBPSA1 Infineon Technologies Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
F411MR12W2M1B76BOMA1 F411MR12W2M1B76BOMA1 Infineon Technologies Description: SIC 4N-CH 1200V AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Produkt ist nicht verfügbar
IGT40R070D1ATMA1 Infineon Technologies Infineon-IGT40R070D1-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aa91bc8810c5c Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Produkt ist nicht verfügbar
IST007N04NM6AUMA1 IST007N04NM6AUMA1 Infineon Technologies Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.83 EUR
10+ 4.9 EUR
100+ 3.96 EUR
500+ 3.52 EUR
1000+ 3.01 EUR
Mindestbestellmenge: 4
REFICL8810LED43WBMTOBO1 REFICL8810LED43WBMTOBO1 Infineon Technologies Description: ICL8810 REF BOARD 43W BM
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1, Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+105.6 EUR
IPLK70R900P7ATMA1 IPLK70R900P7ATMA1 Infineon Technologies Infineon-IPLK70R900P7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce0bd2c1b2d5f Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPD100N06S403ATMA2 IPD100N06S403ATMA2 Infineon Technologies INFNS14378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.59 EUR
Mindestbestellmenge: 2500
CYW4329HKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4329FKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4325GKWBGT Infineon Technologies BCM4325_RevE_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4330FKUBGT Infineon Technologies CYW4330FKUBGT_Web.pdf Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4330XKUBGT Infineon Technologies BCM4330_RevE_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW20740A2KMLG Infineon Technologies Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPTG007N06NM5ATMA1 IPTG007N06NM5ATMA1 Infineon Technologies Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+6.12 EUR
Mindestbestellmenge: 1800
IPTG007N06NM5ATMA1 IPTG007N06NM5ATMA1 Infineon Technologies Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
auf Bestellung 3556 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.77 EUR
10+ 9.24 EUR
100+ 7.7 EUR
500+ 6.8 EUR
Mindestbestellmenge: 2
ISZ080N10NM6ATMA1 ISZ080N10NM6ATMA1 Infineon Technologies Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5 Description: TRENCH >=100V PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
ISZ080N10NM6ATMA1 ISZ080N10NM6ATMA1 Infineon Technologies Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5 Description: TRENCH >=100V PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 4505 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+ 2.28 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.3 EUR
2000+ 1.24 EUR
Mindestbestellmenge: 7
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 Infineon Technologies Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 Infineon Technologies Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+ 2.34 EUR
100+ 1.86 EUR
500+ 1.58 EUR
1000+ 1.34 EUR
2000+ 1.27 EUR
Mindestbestellmenge: 7
ISC060N10NM6ATMA1 ISC060N10NM6ATMA1 Infineon Technologies Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.75 EUR
Mindestbestellmenge: 5000
ISC060N10NM6ATMA1 ISC060N10NM6ATMA1 Infineon Technologies Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 24357 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
10+ 3.35 EUR
100+ 2.66 EUR
500+ 2.25 EUR
1000+ 1.91 EUR
2000+ 1.82 EUR
Mindestbestellmenge: 5
FZ3600R12HP4PHPSA1 FZ3600R12HP4PHPSA1 Infineon Technologies Description: IGBT MOD 1200V 4930A AGIHMB190-2
Produkt ist nicht verfügbar
DD800S17H4B2BOSA2 DD800S17H4B2BOSA2 Infineon Technologies Infineon-DD800S17H4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df3511e6aa1 Description: DIODE MODUL GP 1700V AGIHMB130-1
Produkt ist nicht verfügbar
DDB6U104N16RRB37BPSA1 DDB6U104N16RRB37BPSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+207.93 EUR
DDB6U104N16RRBPSA1 DDB6U104N16RRBPSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+207.93 EUR
DDB6U84N16RRBPSA1 DDB6U84N16RRBPSA1 Infineon Technologies Infineon-DDB6U84N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f59252b3 Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
F3L400R07W3S5B59BPSA1 F3L400R07W3S5B59BPSA1 Infineon Technologies Infineon-F3L400R07W3S5_B59-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef605751310 Description: LOW POWER EASY AG-EASY3B-7011
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.13V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 255 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 19 µA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+246.51 EUR
FP15R12W1T7PBPSA1 FP15R12W1T7PBPSA1 Infineon Technologies Infineon-FP15R12W1T7P-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1881082731c Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+80.64 EUR
10+ 73.31 EUR
FP15R12W1T7PB11BPSA1 FP15R12W1T7PB11BPSA1 Infineon Technologies Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2 Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+83.46 EUR
FF300R12ME7B11BPSA1 FF300R12ME7B11BPSA1 Infineon Technologies Infineon-FF300R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad70463236 Description: MEDIUM POWER ECONO, AG-ECONOD-74
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 46 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+270.72 EUR
FF750R12ME7B11BPSA1 FF750R12ME7B11BPSA1 Infineon Technologies Infineon-FF750R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad908a3239 Description: ECONODUAL 3 WITH TRENCHSTOP IGBT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 115 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+421.19 EUR
10+ 394.49 EUR
BGS12SL6E6327XTSA1 BGS12SL6E6327XTSA1 Infineon Technologies BGS12SL6.pdf Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Produkt ist nicht verfügbar
BGS12SL6E6327XTSA1 BGS12SL6E6327XTSA1 Infineon Technologies BGS12SL6.pdf Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Produkt ist nicht verfügbar
ISC012N04LM6ATMA1 ISC012N04LM6ATMA1 Infineon Technologies Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.79 EUR
Mindestbestellmenge: 5000
ISC012N04LM6ATMA1 ISC012N04LM6ATMA1 Infineon Technologies Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 11289 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.12 EUR
10+ 3.42 EUR
100+ 2.72 EUR
500+ 2.3 EUR
1000+ 1.95 EUR
2000+ 1.86 EUR
Mindestbestellmenge: 5
REFICL8820LED43WJTTOBO1 REFICL8820LED43WJTTOBO1 Infineon Technologies Description: ICL8820 REF BOARD 43W JT
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8820
Supplied Contents: Board(s)
Outputs and Type: 1, Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+97.33 EUR
CY90387PMT-GT-350E1 CY90387PMT-GT-350E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IAUC100N10S5L054ATMA1 Infineon Technologies Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 64µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
Produkt ist nicht verfügbar
IPW60R070P6 Infineon Technologies Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e Description: 600V, 0.07OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
Produkt ist nicht verfügbar
FS450R17OE4BOSA1 FS450R17OE4BOSA1 Infineon Technologies Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b Description: IGBT MOD 1700V 630A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+1395.38 EUR
DF900R12IP4DVBOSA1 DF900R12IP4DVBOSA1 Infineon Technologies Infineon-DF900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f4eadf0f0271 Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+866.2 EUR
TLD2326ELXUMA1 TLD2326ELXUMA1 Infineon Technologies Infineon-TLD2326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53c6bc3ad2 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
auf Bestellung 4422 Stücke:
Lieferzeit 10-14 Tag (e)
333+1.48 EUR
Mindestbestellmenge: 333
DR11141890NDSA1 Infineon Technologies Description: A-PCB DR111 41890
Produkt ist nicht verfügbar
IPB65R115CFD7AATMA1 Infineon Technologies Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Produkt ist nicht verfügbar
IPB65R115CFD7AATMA1 Infineon Technologies Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Produkt ist nicht verfügbar
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Produkt ist nicht verfügbar
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Produkt ist nicht verfügbar
SLE66R01PNBX1SA1 Infineon Technologies SLE%2066R01P,PN.pdf Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
SLE66R35RCZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR DIE
Produkt ist nicht verfügbar
SLE66R04PNBZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
CHL8325A-16CRT Infineon Technologies IR3541_CHL8325A_B_v1.09_6-21-13.pdf Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
FZ2400R33HE4BPSA1 FZ2400R33HE4BPSA1 Infineon Technologies Infineon-FZ2400R33HE4-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d58b60587 Description: HV B SINGLE SWITCH POWER MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 5400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+3301.11 EUR
FZ1400R33HE4BPSA1 FZ1400R33HE4BPSA1 Infineon Technologies Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Description: IGBT MODULE DIODE HVB130-3
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+5360.45 EUR
FF600R07ME4BPSA1 FF600R07ME4BPSA1 Infineon Technologies Infineon-FF600R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e34c4b11090 Description: GBT MODULE 650V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+278.8 EUR
FF300R07ME4BOSA1 FF300R07ME4BOSA1 Infineon Technologies Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b Description: GBT MODULE 650V 300A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+207.03 EUR
BGA7P320E6327XTSA1 Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
Part Status: Active
Produkt ist nicht verfügbar
IRFS23N20DTRRP irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFS23N20DTRRP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
BSC240N12NS3G INFNS15757-1.pdf?t.download=true&u=5oefqw
BSC240N12NS3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
SIDC81D60E6YX1SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
SIDC81D120F6YX1SA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
DDB6U100N16RRBPSA1 Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af
DDB6U100N16RRBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
F411MR12W2M1B76BOMA1
F411MR12W2M1B76BOMA1
Hersteller: Infineon Technologies
Description: SIC 4N-CH 1200V AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
Produkt ist nicht verfügbar
IGT40R070D1ATMA1 Infineon-IGT40R070D1-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aa91bc8810c5c
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Produkt ist nicht verfügbar
IST007N04NM6AUMA1 Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d
IST007N04NM6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.83 EUR
10+ 4.9 EUR
100+ 3.96 EUR
500+ 3.52 EUR
1000+ 3.01 EUR
Mindestbestellmenge: 4
REFICL8810LED43WBMTOBO1
REFICL8810LED43WBMTOBO1
Hersteller: Infineon Technologies
Description: ICL8810 REF BOARD 43W BM
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1, Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+105.6 EUR
IPLK70R900P7ATMA1 Infineon-IPLK70R900P7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce0bd2c1b2d5f
IPLK70R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPD100N06S403ATMA2 INFNS14378-1.pdf?t.download=true&u=5oefqw
IPD100N06S403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.59 EUR
Mindestbestellmenge: 2500
CYW4329HKUBGT BCM4329_RevF_Sep19,2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4329FKUBGT BCM4329_RevF_Sep19,2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4325GKWBGT BCM4325_RevE_Sep19%2C2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4330FKUBGT CYW4330FKUBGT_Web.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4330XKUBGT BCM4330_RevE_Sep19%2C2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW20740A2KMLG
Hersteller: Infineon Technologies
Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPTG007N06NM5ATMA1 Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e
IPTG007N06NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+6.12 EUR
Mindestbestellmenge: 1800
IPTG007N06NM5ATMA1 Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e
IPTG007N06NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
auf Bestellung 3556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.77 EUR
10+ 9.24 EUR
100+ 7.7 EUR
500+ 6.8 EUR
Mindestbestellmenge: 2
ISZ080N10NM6ATMA1 Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5
ISZ080N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
ISZ080N10NM6ATMA1 Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5
ISZ080N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 4505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.73 EUR
10+ 2.28 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.3 EUR
2000+ 1.24 EUR
Mindestbestellmenge: 7
ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
ISC080N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Produkt ist nicht verfügbar
ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
ISC080N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.82 EUR
10+ 2.34 EUR
100+ 1.86 EUR
500+ 1.58 EUR
1000+ 1.34 EUR
2000+ 1.27 EUR
Mindestbestellmenge: 7
ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
ISC060N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.75 EUR
Mindestbestellmenge: 5000
ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
ISC060N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 24357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.03 EUR
10+ 3.35 EUR
100+ 2.66 EUR
500+ 2.25 EUR
1000+ 1.91 EUR
2000+ 1.82 EUR
Mindestbestellmenge: 5
FZ3600R12HP4PHPSA1
FZ3600R12HP4PHPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 4930A AGIHMB190-2
Produkt ist nicht verfügbar
DD800S17H4B2BOSA2 Infineon-DD800S17H4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df3511e6aa1
DD800S17H4B2BOSA2
Hersteller: Infineon Technologies
Description: DIODE MODUL GP 1700V AGIHMB130-1
Produkt ist nicht verfügbar
DDB6U104N16RRB37BPSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf
DDB6U104N16RRB37BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+207.93 EUR
DDB6U104N16RRBPSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+207.93 EUR
DDB6U84N16RRBPSA1 Infineon-DDB6U84N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f59252b3
DDB6U84N16RRBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
F3L400R07W3S5B59BPSA1 Infineon-F3L400R07W3S5_B59-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef605751310
F3L400R07W3S5B59BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-7011
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.13V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 255 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 19 µA
Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+246.51 EUR
FP15R12W1T7PBPSA1 Infineon-FP15R12W1T7P-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f1881082731c
FP15R12W1T7PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+80.64 EUR
10+ 73.31 EUR
FP15R12W1T7PB11BPSA1 Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2
FP15R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+83.46 EUR
FF300R12ME7B11BPSA1 Infineon-FF300R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad70463236
FF300R12ME7B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO, AG-ECONOD-74
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 46 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+270.72 EUR
FF750R12ME7B11BPSA1 Infineon-FF750R12ME7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b10ad908a3239
FF750R12ME7B11BPSA1
Hersteller: Infineon Technologies
Description: ECONODUAL 3 WITH TRENCHSTOP IGBT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 115 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+421.19 EUR
10+ 394.49 EUR
BGS12SL6E6327XTSA1 BGS12SL6.pdf
BGS12SL6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Produkt ist nicht verfügbar
BGS12SL6E6327XTSA1 BGS12SL6.pdf
BGS12SL6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Produkt ist nicht verfügbar
ISC012N04LM6ATMA1 Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860
ISC012N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.79 EUR
Mindestbestellmenge: 5000
ISC012N04LM6ATMA1 Infineon-ISC012N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01790dfac61a4860
ISC012N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 11289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.12 EUR
10+ 3.42 EUR
100+ 2.72 EUR
500+ 2.3 EUR
1000+ 1.95 EUR
2000+ 1.86 EUR
Mindestbestellmenge: 5
REFICL8820LED43WJTTOBO1
REFICL8820LED43WJTTOBO1
Hersteller: Infineon Technologies
Description: ICL8820 REF BOARD 43W JT
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8820
Supplied Contents: Board(s)
Outputs and Type: 1, Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+97.33 EUR
CY90387PMT-GT-350E1 download
CY90387PMT-GT-350E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 64µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
Produkt ist nicht verfügbar
IPW60R070P6 Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e
Hersteller: Infineon Technologies
Description: 600V, 0.07OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
Produkt ist nicht verfügbar
FS450R17OE4BOSA1 Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b
FS450R17OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1395.38 EUR
DF900R12IP4DVBOSA1 Infineon-DF900R12IP4DV-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f4eadf0f0271
DF900R12IP4DVBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+866.2 EUR
TLD2326ELXUMA1 Infineon-TLD2326EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53c6bc3ad2
TLD2326ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
auf Bestellung 4422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
333+1.48 EUR
Mindestbestellmenge: 333
DR11141890NDSA1
Hersteller: Infineon Technologies
Description: A-PCB DR111 41890
Produkt ist nicht verfügbar
IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Produkt ist nicht verfügbar
IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Produkt ist nicht verfügbar
IPL65R115CFD7AUMA1 Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7
IPL65R115CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Produkt ist nicht verfügbar
IPL65R115CFD7AUMA1 Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7
IPL65R115CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Produkt ist nicht verfügbar
SLE66R01PNBX1SA1 SLE%2066R01P,PN.pdf
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
SLE66R35RCZZZA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR DIE
Produkt ist nicht verfügbar
SLE66R04PNBZZZA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
CHL8325A-16CRT IR3541_CHL8325A_B_v1.09_6-21-13.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
FZ2400R33HE4BPSA1 Infineon-FZ2400R33HE4-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d58b60587
FZ2400R33HE4BPSA1
Hersteller: Infineon Technologies
Description: HV B SINGLE SWITCH POWER MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 5400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3301.11 EUR
FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
FZ1400R33HE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE DIODE HVB130-3
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5360.45 EUR
FF600R07ME4BPSA1 Infineon-FF600R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e34c4b11090
FF600R07ME4BPSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 650V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-4
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+278.8 EUR
FF300R07ME4BOSA1 Infineon-FF300R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e1956c9107b
FF300R07ME4BOSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 650V 300A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+207.03 EUR
Wählen Sie Seite:   [  << Vorherige Seite ]  1 225 442 443 444 445 446 447 448 449 450 451 452 675 900 1125 1350 1575 1800 2025 2250 2255  [ Nächste Seite >> ]