Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (135288) > Seite 448 nach 2255
Foto | Bezeichnung | Hersteller | Beschreibung |
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S2GOSECURITYOPTIGAETOBO1 | Infineon Technologies |
Description: EVAL TRUST X SECURITY CHIP Packaging: Bulk Function: Security Type: Interface Contents: Board(s) Utilized IC / Part: OPTIGA Trust E Platform: Shield2Go Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL256LAGBHI030 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 24BGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20237-24LKXI | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 16QFN Packaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Part Status: Active Number of I/O: 14 DigiKey Programmable: Not Verified |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT 54W E6327 | Infineon Technologies | Description: DIODE SCHOTTKY 30V 200MA SOT323 |
Produkt ist nicht verfügbar |
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DDB2U40N12W1RFB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-2311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A Current - Reverse Leakage @ Vr: 116 µA @ 1200 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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OPTIGATRUSTMEVALKITTOBO1 | Infineon Technologies |
Description: OPTIGA TRUST M EVAL KIT Packaging: Box Function: Battery Authentication Type: Interface Supplied Contents: Board(s) Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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FF6MR12W2M1B70BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 20mW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Supplier Device Package: AG-EASY2B Part Status: Obsolete |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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FF300R08W2P2B11ABOMA1 | Infineon Technologies |
Description: EASY PACK AG-EASY2B-3 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-EASY2B-3 Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 53 nF @ 50 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IFX1117GSV | Infineon Technologies |
Description: IC REG LIN POS ADJ 1A SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Max): 13.6V Voltage - Output (Min/Fixed): 1.25V Part Status: Obsolete PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 5707 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4274DV33ATMA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA TO252-3-11 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V PSRR: 60dB (100Hz) Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
Produkt ist nicht verfügbar |
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BGS16GA14E6327XTSA1 | Infineon Technologies | Description: IC RF SWITCH SP6T 3.8GHZ |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC7531SCQ040XAAXUMA1 | Infineon Technologies |
Description: XMC1000 PG-VQFN-40 Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: PWM, UART Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.8V ~ 5.5V Controller Series: XMCxxxxSC Program Memory Type: FLASH Applications: Wireless Power Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-40 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TLS41255VBOARDTOBO1 | Infineon Technologies |
Description: TLS4125 5V BOARD Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3.7V ~ 35V Current - Output: 2.5A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS4125D0EPV50 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS41205VBOARDTOBO1 | Infineon Technologies |
Description: TLS4120 5V BOARD Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3.7V ~ 35V Current - Output: 2A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS4120D0EPV50 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI45N06S4L08AKSA2 | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFET Packaging: Bulk |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI45N06S4-09AKSA2 | Infineon Technologies |
Description: IPI45N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V |
auf Bestellung 97500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB45N06S409ATMA2 | Infineon Technologies | Description: MOSFET N-CH 60V 45A TO263-3 |
Produkt ist nicht verfügbar |
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BGA751L7E6327 | Infineon Technologies |
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7 Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 170MHz ~ 1.675GHz RF Type: General Purpose Voltage - Supply: 1.5V ~ 3.6V Gain: 15.75dB Current - Supply: 5.85mA Noise Figure: 1.3dB P1dB: -10dBm Test Frequency: 470MHz Supplier Device Package: PG-TSLP-7-1 |
auf Bestellung 30441 Stücke: Lieferzeit 10-14 Tag (e) |
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BGSA11GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPST 5GHZ TSNP10-1 Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPST RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 0.35dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 2.69GHz Isolation: 14dB Supplier Device Package: PG-TSNP-10-1 IIP3: 75dBm Part Status: Active |
Produkt ist nicht verfügbar |
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EVAL-M1-301FTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMC301A-F064 Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IMC301A-F064 Supplied Contents: Board(s), Cable(s), Accessories Primary Attributes: 3.3V, 5V Supply Embedded: Yes, MCU |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD133B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 13VC P/WLL-2-2 Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: DVI, HDMI, Telecom, USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: P/PG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 21W Power Line Protection: No Part Status: Active |
auf Bestellung 7154 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL256SDSBHI210 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 24BGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL128SDSBHI210 | Infineon Technologies | Description: IC FLASH 128MBIT SPI/QUAD 24BGA |
Produkt ist nicht verfügbar |
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MB95F714MNPMC-G-SNE2 | Infineon Technologies | Description: IC MCU 8BIT 20KB FLASH 80LQFP |
Produkt ist nicht verfügbar |
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IST026N10NM5AUMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 148µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
Produkt ist nicht verfügbar |
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IST026N10NM5AUMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 148µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
auf Bestellung 1671 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC0802NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 22A/150A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 92µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC0802NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 22A/150A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 92µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V |
auf Bestellung 5079 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3028SDL | Infineon Technologies | Description: BTS3028 - HITFET, AUTOMOTIVE SMA |
Produkt ist nicht verfügbar |
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S25FS256SAGMFM003 | Infineon Technologies | Description: IC FLASH 256MBIT SPI/QUAD 16SOIC |
Produkt ist nicht verfügbar |
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TLS412033VCOREBOARDTOBO1 | Infineon Technologies | Description: TLS4120 3.3V CORE-BOARD |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP082N10NF2SAKMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 46µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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IFX25001MEV33 | Infineon Technologies | Description: IC REG LIN 3.3V 400MA SOT223-4 |
Produkt ist nicht verfügbar |
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IPI126N10N3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
Produkt ist nicht verfügbar |
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TLE7241EXUMA2 | Infineon Technologies | Description: IC PWR DRIVER N-CHAN 1:2 DSO-20 |
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TLE7241EXUMA2 | Infineon Technologies | Description: IC PWR DRIVER N-CHAN 1:2 DSO-20 |
Produkt ist nicht verfügbar |
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D251K12BXPSA1 | Infineon Technologies | Description: DIODE GEN PURP 1.2KV 255A |
Produkt ist nicht verfügbar |
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TD780N18KOFHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 775 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.8 kV |
Produkt ist nicht verfügbar |
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MB90F349ESPMC-GS-N2E1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100LQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Obsolete Number of I/O: 82 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CHL8225G-00CRT | Infineon Technologies | Description: IC REG CTRLR GPU 2OUT 40QFN |
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CHL8225G-07CRT | Infineon Technologies | Description: IC REG CTRLR GPU 2OUT 40QFN |
Produkt ist nicht verfügbar |
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CHL8225G-05CRT | Infineon Technologies | Description: IC REG CTRLR GPU 2OUT 40QFN |
Produkt ist nicht verfügbar |
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CHL8225G-02CRT | Infineon Technologies | Description: IC REG CTRLR GPU 2OUT 40QFN |
Produkt ist nicht verfügbar |
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CHL8225G-06CRT | Infineon Technologies | Description: IC REG CTRLR GPU 2OUT 40QFN |
Produkt ist nicht verfügbar |
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BA595E6359HTMA1 | Infineon Technologies | Description: RF DIODE PIN 50V SC79-2 |
Produkt ist nicht verfügbar |
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BA595E6359HTMA1 | Infineon Technologies | Description: RF DIODE PIN 50V SC79-2 |
Produkt ist nicht verfügbar |
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BA885E7631HTMA1 | Infineon Technologies |
Description: RF DIODE PIN 50V SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2-1 Grade: Automotive Current - Max: 50 mA Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPC313N10N3RX1SA2 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Bulk Part Status: Active |
auf Bestellung 7784 Stücke: Lieferzeit 10-14 Tag (e) |
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SAK-XC2797X-200F100LAB | Infineon Technologies |
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 1.6MB (1.6M x 8) RAM Size: 138K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 30x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SAKXC2297H136F80LABKXUMA2 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.088MB (1.088M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 40x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IAUS240N08S5N019ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 240A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 2516 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG014N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 37A/366A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPTG014N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 37A/366A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
auf Bestellung 663 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM50GD120DLCBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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BSM50GD120DN2BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7751TRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 30V 4.5A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-TSSOP |
Produkt ist nicht verfügbar |
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S26KS512SDPBHN020 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S26KS512SDABHI030 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S26KS512SDGBHM030 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Bulk Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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S26KS512SDPBHB020 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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S2GOSECURITYOPTIGAETOBO1 |
Hersteller: Infineon Technologies
Description: EVAL TRUST X SECURITY CHIP
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
Platform: Shield2Go
Part Status: Active
Description: EVAL TRUST X SECURITY CHIP
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust E
Platform: Shield2Go
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)S25FL256LAGBHI030 |
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)CY8C20237-24LKXI |
Hersteller: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)BAT 54W E6327 |
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA SOT323
Description: DIODE SCHOTTKY 30V 200MA SOT323
Produkt ist nicht verfügbar
DDB2U40N12W1RFB11BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 150.13 EUR |
OPTIGATRUSTMEVALKITTOBO1 |
Hersteller: Infineon Technologies
Description: OPTIGA TRUST M EVAL KIT
Packaging: Box
Function: Battery Authentication
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
Description: OPTIGA TRUST M EVAL KIT
Packaging: Box
Function: Battery Authentication
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 211.2 EUR |
FF6MR12W2M1B70BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: AG-EASY2B
Part Status: Obsolete
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: AG-EASY2B
Part Status: Obsolete
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 585.8 EUR |
15+ | 568.18 EUR |
FF300R08W2P2B11ABOMA1 |
Hersteller: Infineon Technologies
Description: EASY PACK AG-EASY2B-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
Description: EASY PACK AG-EASY2B-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 126.97 EUR |
IFX1117GSV |
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 5707 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
770+ | 0.63 EUR |
TLE4274DV33ATMA1 |
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Produkt ist nicht verfügbar
BGS16GA14E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP6T 3.8GHZ
Description: IC RF SWITCH SP6T 3.8GHZ
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.87 EUR |
11+ | 1.67 EUR |
XMC7531SCQ040XAAXUMA1 |
Hersteller: Infineon Technologies
Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40
DigiKey Programmable: Not Verified
Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TLS41255VBOARDTOBO1 |
Hersteller: Infineon Technologies
Description: TLS4125 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: TLS4125 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 89.44 EUR |
TLS41205VBOARDTOBO1 |
Hersteller: Infineon Technologies
Description: TLS4120 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: TLS4120 5V BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV50
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 91.54 EUR |
IPI45N06S4L08AKSA2 |
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
742+ | 0.67 EUR |
IPI45N06S4-09AKSA2 |
Hersteller: Infineon Technologies
Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
359+ | 1.4 EUR |
IPB45N06S409ATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Description: MOSFET N-CH 60V 45A TO263-3
Produkt ist nicht verfügbar
BGA751L7E6327 |
Hersteller: Infineon Technologies
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 170MHz ~ 1.675GHz
RF Type: General Purpose
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.75dB
Current - Supply: 5.85mA
Noise Figure: 1.3dB
P1dB: -10dBm
Test Frequency: 470MHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 170MHz ~ 1.675GHz
RF Type: General Purpose
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.75dB
Current - Supply: 5.85mA
Noise Figure: 1.3dB
P1dB: -10dBm
Test Frequency: 470MHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 30441 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
799+ | 0.63 EUR |
BGSA11GN10E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
Produkt ist nicht verfügbar
EVAL-M1-301FTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC301A-F064
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC301A-F064
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: 3.3V, 5V Supply
Embedded: Yes, MCU
Description: EVAL BOARD FOR IMC301A-F064
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC301A-F064
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: 3.3V, 5V Supply
Embedded: Yes, MCU
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 111.72 EUR |
ESD133B1W01005E6327XTSA1 |
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC P/WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, HDMI, Telecom, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 13VC P/WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, HDMI, Telecom, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
auf Bestellung 7154 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
69+ | 0.26 EUR |
142+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.072 EUR |
2000+ | 0.062 EUR |
5000+ | 0.058 EUR |
S25FL256SDSBHI210 |
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
S25FL128SDSBHI210 |
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Produkt ist nicht verfügbar
MB95F714MNPMC-G-SNE2 |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 80LQFP
Description: IC MCU 8BIT 20KB FLASH 80LQFP
Produkt ist nicht verfügbar
IST026N10NM5AUMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: TRENCH >=100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Produkt ist nicht verfügbar
IST026N10NM5AUMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 1671 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.83 EUR |
10+ | 6.58 EUR |
100+ | 5.32 EUR |
500+ | 4.73 EUR |
1000+ | 4.05 EUR |
ISC0802NLSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 2.05 EUR |
ISC0802NLSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
auf Bestellung 5079 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.73 EUR |
10+ | 3.92 EUR |
100+ | 3.12 EUR |
500+ | 2.64 EUR |
1000+ | 2.24 EUR |
2000+ | 2.13 EUR |
BTS3028SDL |
Hersteller: Infineon Technologies
Description: BTS3028 - HITFET, AUTOMOTIVE SMA
Description: BTS3028 - HITFET, AUTOMOTIVE SMA
Produkt ist nicht verfügbar
S25FS256SAGMFM003 |
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
TLS412033VCOREBOARDTOBO1 |
Hersteller: Infineon Technologies
Description: TLS4120 3.3V CORE-BOARD
Description: TLS4120 3.3V CORE-BOARD
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 61.07 EUR |
IPP082N10NF2SAKMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.73 EUR |
50+ | 2.2 EUR |
IFX25001MEV33 |
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA SOT223-4
Description: IC REG LIN 3.3V 400MA SOT223-4
Produkt ist nicht verfügbar
IPI126N10N3G |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
TLE7241EXUMA2 |
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Produkt ist nicht verfügbar
TLE7241EXUMA2 |
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Produkt ist nicht verfügbar
D251K12BXPSA1 |
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 255A
Description: DIODE GEN PURP 1.2KV 255A
Produkt ist nicht verfügbar
TD780N18KOFHPSA1 |
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
MB90F349ESPMC-GS-N2E1 |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CHL8225G-00CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
CHL8225G-07CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
CHL8225G-05CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
CHL8225G-02CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
CHL8225G-06CRT |
Hersteller: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
Produkt ist nicht verfügbar
BA595E6359HTMA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
BA595E6359HTMA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Description: RF DIODE PIN 50V SC79-2
Produkt ist nicht verfügbar
BA885E7631HTMA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Description: RF DIODE PIN 50V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPC313N10N3RX1SA2 |
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
84+ | 5.82 EUR |
SAK-XC2797X-200F100LAB |
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAKXC2297H136F80LABKXUMA2 |
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IAUS240N08S5N019ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2516 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.93 EUR |
10+ | 5.83 EUR |
100+ | 4.72 EUR |
500+ | 4.19 EUR |
IPTG014N10NM5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
IPTG014N10NM5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.06 EUR |
10+ | 11.2 EUR |
100+ | 9.34 EUR |
500+ | 8.24 EUR |
BSM50GD120DLCBPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
BSM50GD120DN2BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
IRF7751TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2P-CH 30V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
S26KS512SDPBHN020 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S26KS512SDABHI030 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S26KS512SDGBHM030 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 30.27 EUR |
S26KS512SDPBHB020 |
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.82 EUR |
10+ | 24.83 EUR |
25+ | 24.49 EUR |
40+ | 24.18 EUR |
80+ | 21.19 EUR |
338+ | 20.28 EUR |
676+ | 20.15 EUR |