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ETT580N16P60HPSA1 ETT580N16P60HPSA1 Infineon Technologies Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 586 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
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1+344.7 EUR
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ETT630N16P60HPSA1 ETT630N16P60HPSA1 Infineon Technologies Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
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1+365.94 EUR
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ETD510N16P60HPSA1 ETD510N16P60HPSA1 Infineon Technologies Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3 Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
auf Bestellung 12 Stücke:
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2+304.89 EUR
Mindestbestellmenge: 2
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IPB65R190CFD7AATMA1 IPB65R190CFD7AATMA1 Infineon Technologies Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3 Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R190CFD7AATMA1 IPB65R190CFD7AATMA1 Infineon Technologies Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3 Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.21 EUR
10+4.31 EUR
100+3.04 EUR
500+2.49 EUR
Mindestbestellmenge: 3
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IPWS65R035CFD7AXKSA1 IPWS65R035CFD7AXKSA1 Infineon Technologies Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9 Description: MOSFET N-CH 650V 63A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 Infineon Technologies Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 240 Stücke:
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110+4.26 EUR
Mindestbestellmenge: 110
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FP50R12W2T7BPSA1 FP50R12W2T7BPSA1 Infineon Technologies Infineon-FP50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f017426941cbf65f1 Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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FP50R12W2T7PB11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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F415MR12W2M1B76BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+507.8 EUR
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PXP1600CPQG003XUMA1 Infineon Technologies Description: IC CONTROLLER
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 1EDI3031ASXUMA1 Infineon Technologies Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 1EDI3031ASXUMA1 Infineon Technologies Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 1EDI3021ASXUMA1 Infineon Technologies Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.65 EUR
Mindestbestellmenge: 1000
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1EDI3021ASXUMA1 1EDI3021ASXUMA1 Infineon Technologies Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
auf Bestellung 1294 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
10+6.2 EUR
25+5.72 EUR
100+5.18 EUR
250+4.93 EUR
500+4.78 EUR
Mindestbestellmenge: 3
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 1EDI3020ASXUMA1 Infineon Technologies Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
10+6.19 EUR
25+5.71 EUR
100+5.18 EUR
250+4.92 EUR
500+4.77 EUR
Mindestbestellmenge: 3
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IPAN60R650CEXKSA1 IPAN60R650CEXKSA1 Infineon Technologies Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 691 Stücke:
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487+0.96 EUR
Mindestbestellmenge: 487
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SAK-XC2264-56F66LAC SAK-XC2264-56F66LAC Infineon Technologies INFNS12472-1.pdf?t.download=true&u=5oefqw Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x8/10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 IPL65R095CFD7AUMA1 Infineon Technologies Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Produkt ist nicht verfügbar
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TLE7469GV53AUMA1 TLE7469GV53AUMA1 Infineon Technologies Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04 Description: IC REG LINEAR 3.3V/5V DSO-12
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA, 215mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz), 60dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 215mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
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3+6.65 EUR
Mindestbestellmenge: 3
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T1080N04TOFXPSA1 T1080N04TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO-200AB
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRF6898MTRPBF Infineon Technologies IRSDS13491-1.pdf?t.download=true&u=5oefqw Description: IRF6898 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Produkt ist nicht verfügbar
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IFX80471SKV50 IFX80471SKV50 Infineon Technologies INFNS15572-1.pdf?t.download=true&u=5oefqw Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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IFX80471SKV Infineon Technologies INFNS15572-1.pdf?t.download=true&u=5oefqw Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Produkt ist nicht verfügbar
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IFX80471SKVXUMA1 IFX80471SKVXUMA1 Infineon Technologies IFX80471.pdf Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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ISZ0803NLSATMA1 ISZ0803NLSATMA1 Infineon Technologies Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0803NLSATMA1 ISZ0803NLSATMA1 Infineon Technologies Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
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10+1.81 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
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ISC0803NLSATMA1 Infineon Technologies Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93 Description: TRENCH >=100V PG-TDSON-8
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ISC0803NLSATMA1 Infineon Technologies Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93 Description: TRENCH >=100V PG-TDSON-8
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IPW50R399CPFKSA1 IPW50R399CPFKSA1 Infineon Technologies IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847 Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 5520 Stücke:
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IPD220N06L3GATMA1 IPD220N06L3GATMA1 Infineon Technologies Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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2500+0.47 EUR
5000+0.43 EUR
7500+0.42 EUR
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IPD088N06N3GATMA1 IPD088N06N3GATMA1 Infineon Technologies Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
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IPD048N06L3GATMA1 IPD048N06L3GATMA1 Infineon Technologies Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Produkt ist nicht verfügbar
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IRF7524D1TRPBF IRF7524D1TRPBF Infineon Technologies IRF7524D1PbF.pdf Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Produkt ist nicht verfügbar
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IAUS300N08S5N012TATMA1 IAUS300N08S5N012TATMA1 Infineon Technologies Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
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1800+4.64 EUR
Mindestbestellmenge: 1800
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TLT125D0EJXUMA1 TLT125D0EJXUMA1 Infineon Technologies Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381 Description: IC REG LIN POS ADJ 250MA DSO8-52
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-52
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 80dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Current - Supply (Max): 25 mA
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2500+2.03 EUR
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TLT125D0EJXUMA1 TLT125D0EJXUMA1 Infineon Technologies Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381 Description: IC REG LIN POS ADJ 250MA DSO8-52
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-52
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 80dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Current - Supply (Max): 25 mA
auf Bestellung 4154 Stücke:
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250+2.67 EUR
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TLE9879QTW40XUMA1 TLE9879QTW40XUMA1 Infineon Technologies Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
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2500+7.87 EUR
Mindestbestellmenge: 2500
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TLE9879QTW40XUMA1 TLE9879QTW40XUMA1 Infineon Technologies Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 7433 Stücke:
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2+14.41 EUR
10+13.01 EUR
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100+10.77 EUR
250+10.29 EUR
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1000+8.17 EUR
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FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 Infineon Technologies Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS450R12OE4B81BPSA1 FS450R12OE4B81BPSA1 Infineon Technologies Infineon-FS450R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a28a36c7b Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Produkt ist nicht verfügbar
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FF2MR12KM1HOSA1 FF2MR12KM1HOSA1 Infineon Technologies Infineon-FF2MR12KM1-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bc9bf70c569b Description: MOSFET 2N-CH 1200V 500A AG-62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-62MM
Part Status: Obsolete
auf Bestellung 13 Stücke:
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1+1461.52 EUR
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IDK05G120C5XTMA1 IDK05G120C5XTMA1 Infineon Technologies Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b Description: DIODE SIC 1.2KV 19.1A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 19.1A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Produkt ist nicht verfügbar
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IDK05G120C5XTMA1 IDK05G120C5XTMA1 Infineon Technologies Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b Description: DIODE SIC 1.2KV 19.1A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 19.1A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
auf Bestellung 955 Stücke:
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3+6.85 EUR
10+4.51 EUR
100+3.17 EUR
500+2.6 EUR
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CHL8326-20CRT CHL8326-20CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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EVAL3K3WTPPFCCCTOBO1 EVAL3K3WTPPFCCCTOBO1 Infineon Technologies Infineon-Solution_brief_CoolMOS_CCM_totem_pole_PFC-ApplicationBrief-v01_00-EN.pdf?fileId=5546d46278d64ffd0179314706a738c4 Description: CFD7 EVAL BOARD
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: CFD7, XMC1402
Supplied Contents: Board(s)
Embedded: Yes
Part Status: Active
auf Bestellung 1 Stücke:
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1+888.64 EUR
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XMC1402T038X0200AAXUMA1 XMC1402T038X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1402T038X0200AAXUMA1 XMC1402T038X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3232 Stücke:
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3+8.22 EUR
10+6.26 EUR
25+5.77 EUR
100+5.23 EUR
250+4.97 EUR
500+4.82 EUR
1000+4.69 EUR
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XMC1402Q040X0128AAXUMA1 XMC1402Q040X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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5000+2.58 EUR
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XMC1402Q040X0200AAXUMA1 XMC1402Q040X0200AAXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BFS 360L6 E6327 Infineon Technologies BFS360L6.pdf Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
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BFS 386L6 E6327 Infineon Technologies BFS386L6.pdf Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
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BFS 469L6 E6327 Infineon Technologies BFS469L6.pdf Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 14.5dB
Power - Max: 200mW, 250mW
Current - Collector (Ic) (Max): 50mA, 70mA
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
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BFS 466L6 E6327 Infineon Technologies BFS466L6.pdf Description: RF TRANS 2 NPN 5V/9V 14GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 200mW, 210mW
Current - Collector (Ic) (Max): 50mA, 35mA
Voltage - Collector Emitter Breakdown (Max): 5V, 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
Frequency - Transition: 22GHz, 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
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BFS 380L6 E6327 Infineon Technologies BFS380L6.pdf Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 8dB ~ 12dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
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BFS 460L6 E6327 Infineon Technologies BFS460L6.pdf Description: RF TRANS 2NPN 5.8V 22GHZ TSLP-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 14.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
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AUIRFSL8405-306TRL Infineon Technologies Description: MOSFET N-CH 40V 120A TO262
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
Produkt ist nicht verfügbar
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IPB80P04P405ATMA2 IPB80P04P405ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 890 Stücke:
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ETT580N16P60HPSA1 Infineon-eTT580N16P60-DS-v03_06-EN.pdf?fileId=5546d46265487f7b01658027a49f34b0
ETT580N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 586 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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Anzahl Preis
1+344.7 EUR
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ETT630N16P60HPSA1 Infineon-DS_eTT630N16P60-DS-v03_01-EN.pdf?fileId=5546d46265f064ff01668579447e6418
ETT630N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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1+365.94 EUR
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ETD510N16P60HPSA1 Infineon-eTT510N16P60-DS-v03_05-EN.pdf?fileId=5546d46265487f7b01658027aea734b3
ETD510N16P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
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Anzahl Preis
2+304.89 EUR
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IPB65R190CFD7AATMA1 Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3
IPB65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R190CFD7AATMA1 Infineon-IPB65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c530f6542c3
IPB65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 952 Stücke:
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Anzahl Preis
3+6.21 EUR
10+4.31 EUR
100+3.04 EUR
500+2.49 EUR
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IPWS65R035CFD7AXKSA1 Infineon-IPWS65R035CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e4a600f28f9
IPWS65R035CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKZ50N65ES5XKSA1 Infineon-IKZ50N65ES5-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015bd8175c56052a
IKZ50N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.26 EUR
Mindestbestellmenge: 110
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FP50R12W2T7BPSA1 Infineon-FP50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f017426941cbf65f1
FP50R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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FP50R12W2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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F415MR12W2M1B76BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
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Anzahl Preis
1+507.8 EUR
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PXP1600CPQG003XUMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Produkt ist nicht verfügbar
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1EDI3031ASXUMA1 Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d
1EDI3031ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
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1EDI3031ASXUMA1 Infineon-1EDI3031AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798965edc10c5d
1EDI3031ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3021ASXUMA1 Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54
1EDI3021ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.65 EUR
Mindestbestellmenge: 1000
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1EDI3021ASXUMA1 Infineon-1EDI3021AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c864a0c54
1EDI3021ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Qualification: AEC-Q100
auf Bestellung 1294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
10+6.2 EUR
25+5.72 EUR
100+5.18 EUR
250+4.93 EUR
500+4.78 EUR
Mindestbestellmenge: 3
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1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
1EDI3020ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 12A
Technology: Magnetic Coupling
Current - Output High, Low: 12A, 12A
Voltage - Isolation: 5700Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
10+6.19 EUR
25+5.71 EUR
100+5.18 EUR
250+4.92 EUR
500+4.77 EUR
Mindestbestellmenge: 3
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IPAN60R650CEXKSA1 Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d
IPAN60R650CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
487+0.96 EUR
Mindestbestellmenge: 487
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SAK-XC2264-56F66LAC INFNS12472-1.pdf?t.download=true&u=5oefqw
SAK-XC2264-56F66LAC
Hersteller: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x8/10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Produkt ist nicht verfügbar
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IPL65R095CFD7AUMA1 Infineon-IPL65R095CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6ba6ac52236
IPL65R095CFD7AUMA1
Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Produkt ist nicht verfügbar
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TLE7469GV53AUMA1 Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04
TLE7469GV53AUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO-12
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA, 215mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-12-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz), 60dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 215mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
Mindestbestellmenge: 3
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T1080N04TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N04TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRSDS13491-1.pdf?t.download=true&u=5oefqw
IRF6898MTRPBF
Hersteller: Infineon Technologies
Description: IRF6898 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Produkt ist nicht verfügbar
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IFX80471SKV50 INFNS15572-1.pdf?t.download=true&u=5oefqw
IFX80471SKV50
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
auf Bestellung 7257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
290+1.67 EUR
Mindestbestellmenge: 290
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IFX80471SKV INFNS15572-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Produkt ist nicht verfügbar
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IFX80471SKVXUMA1 IFX80471.pdf
IFX80471SKVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
auf Bestellung 9225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
239+2.05 EUR
Mindestbestellmenge: 239
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ISZ0803NLSATMA1 Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d
ISZ0803NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Produkt ist nicht verfügbar
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ISZ0803NLSATMA1 Infineon-ISZ0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd2bd1bf6d7d
ISZ0803NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.81 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
2000+0.8 EUR
Mindestbestellmenge: 7
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ISC0803NLSATMA1 Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
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ISC0803NLSATMA1 Infineon-ISC0803NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd62c8076d93
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Produkt ist nicht verfügbar
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IPW50R399CPFKSA1 IPW50R399CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d487e4847
IPW50R399CPFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
251+1.95 EUR
Mindestbestellmenge: 251
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IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
5000+0.43 EUR
7500+0.42 EUR
Mindestbestellmenge: 2500
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IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
IPD088N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Produkt ist nicht verfügbar
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IPD048N06L3GATMA1 Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Produkt ist nicht verfügbar
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IRF7524D1TRPBF IRF7524D1PbF.pdf
IRF7524D1TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Produkt ist nicht verfügbar
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IAUS300N08S5N012TATMA1 Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb
IAUS300N08S5N012TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+4.64 EUR
Mindestbestellmenge: 1800
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TLT125D0EJXUMA1 Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381
TLT125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 250MA DSO8-52
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-52
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 80dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Current - Supply (Max): 25 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.03 EUR
Mindestbestellmenge: 2500
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TLT125D0EJXUMA1 Infineon-TLT125D0EJ-DataSheet-v01_02-EN.pdf?fileId=5546d46279a6fbb20179ba9230257381
TLT125D0EJXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 250MA DSO8-52
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-52
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 80dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Current - Supply (Max): 25 mA
auf Bestellung 4154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+3.54 EUR
25+3.34 EUR
100+2.85 EUR
250+2.67 EUR
500+2.34 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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TLE9879QTW40XUMA1 Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f
TLE9879QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+7.87 EUR
Mindestbestellmenge: 2500
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TLE9879QTW40XUMA1 Infineon-TLE9879QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c76525349f
TLE9879QTW40XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 7433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.41 EUR
10+13.01 EUR
25+12.4 EUR
100+10.77 EUR
250+10.29 EUR
500+9.38 EUR
1000+8.17 EUR
Mindestbestellmenge: 2
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FS300R17OE4B81BPSA1 Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72
FS300R17OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS450R12OE4B81BPSA1 Infineon-FS450R12OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad0172602a28a36c7b
FS450R12OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Produkt ist nicht verfügbar
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FF2MR12KM1HOSA1 Infineon-FF2MR12KM1-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bc9bf70c569b
FF2MR12KM1HOSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 500A AG-62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-62MM
Part Status: Obsolete
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1461.52 EUR
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IDK05G120C5XTMA1 Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b
IDK05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 19.1A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Produkt ist nicht verfügbar
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IDK05G120C5XTMA1 Infineon-IDK05G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0cac20f3b
IDK05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 19.1A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
10+4.51 EUR
100+3.17 EUR
500+2.6 EUR
Mindestbestellmenge: 3
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CHL8326-20CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8326-20CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Produkt ist nicht verfügbar
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EVAL3K3WTPPFCCCTOBO1 Infineon-Solution_brief_CoolMOS_CCM_totem_pole_PFC-ApplicationBrief-v01_00-EN.pdf?fileId=5546d46278d64ffd0179314706a738c4
EVAL3K3WTPPFCCCTOBO1
Hersteller: Infineon Technologies
Description: CFD7 EVAL BOARD
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: CFD7, XMC1402
Supplied Contents: Board(s)
Embedded: Yes
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+888.64 EUR
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XMC1402T038X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1402T038X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402T038X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.22 EUR
10+6.26 EUR
25+5.77 EUR
100+5.23 EUR
250+4.97 EUR
500+4.82 EUR
1000+4.69 EUR
Mindestbestellmenge: 3
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XMC1402Q040X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.58 EUR
Mindestbestellmenge: 5000
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XMC1402Q040X0200AAXUMA1 fundamentals-of-power-semiconductors
XMC1402Q040X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BFS 360L6 E6327 BFS360L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Produkt ist nicht verfügbar
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BFS 386L6 E6327 BFS386L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
Produkt ist nicht verfügbar
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BFS 469L6 E6327 BFS469L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 14.5dB
Power - Max: 200mW, 250mW
Current - Collector (Ic) (Max): 50mA, 70mA
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BFS 466L6 E6327 BFS466L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 5V/9V 14GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 200mW, 210mW
Current - Collector (Ic) (Max): 50mA, 35mA
Voltage - Collector Emitter Breakdown (Max): 5V, 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
Frequency - Transition: 22GHz, 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BFS 380L6 E6327 BFS380L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 8dB ~ 12dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Produkt ist nicht verfügbar
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BFS 460L6 E6327 BFS460L6.pdf
Hersteller: Infineon Technologies
Description: RF TRANS 2NPN 5.8V 22GHZ TSLP-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 14.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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AUIRFSL8405-306TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
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IPB80P04P405ATMA2 Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a
IPB80P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
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