Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128360) > Seite 451 nach 2140
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TZ500N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 1050A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.4 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TZ600N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 1050A MODULE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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REFFRIDGED111TRC2SLTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMD111T-6F040Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s), Cable(s) Utilized IC / Part: IMD111T-6F040, IKD04N60RC2 Supplied Contents: Board(s), Cable(s) Primary Attributes: Compressor Embedded: Yes, MCU Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TLV49645TBXALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR TO92SFeatures: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Short Body Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 26V Technology: Hall Effect Sensing Range: 10.4mT Trip, 2.8mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: TO-92S Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLI49631MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 5mA Sensing Range: 3.5mT Trip, -3.5mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 125°C Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
auf Bestellung 4470 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM400GA170DLS | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 3120 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 27 nF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80P03P4L07ATMA2 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KITIM69D127V11FLEXTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IM69D127V11 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM69D127V11 Supplied Contents: Board(s) Primary Attributes: Digital Output Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IFX2931GV33 | Infineon Technologies |
Description: IC REG LINEAR FIXED POS LDO REGCurrent - Supply (Max): 15 mA Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity Voltage Dropout (Max): 1.1V @ 100mA PSRR: 80dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: PG-DSO-8-1 Number of Regulators: 1 Voltage - Input (Max): 26V Current - Quiescent (Iq): 1 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 100mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 1648 Stücke: Lieferzeit 10-14 Tag (e) |
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IFX8117MEV33 | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REG |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE4954CE4807BAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV 99 E6433 | Infineon Technologies |
Description: DIODE ARRAY GP 80V 200MA PGSOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| ISP06P008NSATMA1 | Infineon Technologies |
Description: MOSFET P-CH SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Supplier Device Package: PG-SOT223 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IAUC100N04S6L014ATMA1 | Infineon Technologies |
Description: IAUC100N04S6L014ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC100N04S6L014ATMA1 | Infineon Technologies |
Description: IAUC100N04S6L014ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 15344 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFI7446GPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO220AB FPInput Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 3.9V @ 100µA Power Dissipation (Max): 40.5W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSF030NE2LQXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 24A/75A 2WDSON |
Produkt ist nicht verfügbar |
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BSF030NE2LQXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 24A/75A 2WDSON |
auf Bestellung 4785 Stücke: Lieferzeit 10-14 Tag (e) |
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TLF4949EJ | Infineon Technologies |
Description: IC REG LINEAR VOLT TLF4949 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSF083N03LQG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC205N10LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
auf Bestellung 5751 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC029N025SG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V |
auf Bestellung 8868 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC886N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 13A/65A TDSON |
auf Bestellung 8585 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS70E6327 | Infineon Technologies |
Description: BAS70 - HIGH SPEED SWITCHING, CLCurrent - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 70mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 100 ps Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 107857 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL65R130CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFEInput Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 420µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPL65R130CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFEInput Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 420µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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IPT039N15N5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT039N15N5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
auf Bestellung 3851 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT1706WE6327 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT-323Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: SOT-323 Current - Max: 130 mA Power Dissipation (Max): 150 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT162N14KOFHPSA2 | Infineon Technologies |
Description: THYR / DIODE MODULE DKPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 162 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 260 A Voltage - Off State: 1.4 kV |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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CY25404ZXI012 | Infineon Technologies |
Description: IC CLOCK GENERATORDigiKey Programmable: Not Verified Packaging: Bulk |
auf Bestellung 2172 Stücke: Lieferzeit 10-14 Tag (e) |
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CY25404ZXI011 | Infineon Technologies |
Description: IC CLOCK GENERATORDigiKey Programmable: Not Verified Packaging: Bulk |
auf Bestellung 3053 Stücke: Lieferzeit 10-14 Tag (e) |
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BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGAProtocol: ISM Part Status: Active Serial Interfaces: SPI RF Family/Standard: General ISM > 1GHz Supplier Device Package: PG-UF2BGA-42 Voltage - Supply: 1.5V ~ 5V Type: TxRx + MCU Frequency: 60GHz Mounting Type: Surface Mount Package / Case: 42-BGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGAProtocol: ISM Voltage - Supply: 1.5V ~ 5V Type: TxRx + MCU Frequency: 60GHz Mounting Type: Surface Mount Package / Case: 42-BGA Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: SPI RF Family/Standard: General ISM > 1GHz Supplier Device Package: PG-UF2BGA-42 |
auf Bestellung 4602 Stücke: Lieferzeit 10-14 Tag (e) |
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SHIELDBGT60LTR11AIPTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60LTR11AIPPart Status: Active Platform: Arduino MKR Utilized IC / Part: BGT60LTR11AIP Contents: Board(s) Type: Sensor Function: Radar Packaging: Bulk |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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94-3250 | Infineon Technologies |
Description: MOSFET N-CH 30V 12A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Supplier Device Package: DIRECTFET™ MQ Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MQ Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF6601 | Infineon Technologies |
Description: MOSFET N-CH 20V 26A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MT Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MT Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF6602 | Infineon Technologies |
Description: MOSFET N-CH 20V 11A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MQ Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MQ Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCR521E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
Produkt ist nicht verfügbar |
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DDB6U50N16W1RPB11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 50A AG-EASY1BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Single Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 6.2 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS850C2TEV50BOARDTOBO1 | Infineon Technologies |
Description: TLS850C2TE V50 BOARDPart Status: Active Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS850C2TEV50 Board Type: Fully Populated Regulator Type: Positive Fixed Current - Output: 500mA Voltage - Input: 3V ~ 40V Voltage - Output: 5V Packaging: Bulk |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| STT3300N18P76XPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PS76-1 Packaging: Tray Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SAL-TC270TP-64F200NDC | Infineon Technologies |
Description: TC270 - RISC FLASH MICROCONTROLLPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TC277TP64F200SDCKXUMA3 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGANumber of I/O: 169 Part Status: Active Supplier Device Package: PG-LFBGA-292-6 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC275TP64F200WDBKXUMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC277TP64F200SCAKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC275TP64F200WCAKXQMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SAK-TC275TP-64F200N DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC277TP64F200SDBKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Number of I/O: 169 Part Status: Active Supplier Device Package: PG-LFBGA-292-6 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TC277TP64F200SDBKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGANumber of I/O: 169 Part Status: Active Supplier Device Package: PG-LFBGA-292-6 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SAL-TC270TP-64F200N DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH DIEPart Status: Active Supplier Device Package: Die Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 150°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SAL-TC270TP-64F200 CA | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 170°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: Die Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SAK-TC222L-12F133F AB | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 80TQFP Packaging: Tape & Reel (TR) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 1MB (1M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Obsolete Number of I/O: 59 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE5109EVALKITTOBO2 | Infineon Technologies |
Description: TLE5109 EVAL KITPackaging: Bulk Sensitivity: 0.1° Voltage - Supply: 3V ~ 3.6V Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive) Utilized IC / Part: TLE5109, XMC4700 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 180° Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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REFICL8800LED43WTOBO1 | Infineon Technologies |
Description: ICL8800 REF BOARD 43WPart Status: Active Outputs and Type: 1 Isolated Output Supplied Contents: Board(s) Utilized IC / Part: ICL8800 Voltage - Input: 90 ~ 305 VAC Voltage - Output: 52V Features: Dimmable Packaging: Bulk |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALM1CM610N3TOBO2 | Infineon Technologies |
Description: EVAL BOARD FOR IKCM10H60GAPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IKCM10H60GA Supplied Contents: Board(s) Primary Attributes: 110VAC ~ 240VAC Input Voltage Secondary Attributes: On-Board LEDs Embedded: Yes, MCU Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| F3L11MR12W2M1C01BOMA1 | Infineon Technologies | Description: IC SIC MOSFET LOW POWER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KP216K1409 | Infineon Technologies |
Description: SENSOR 16.68PSIA 4.5V DSOF8Part Status: Active Port Style: No Port Supplier Device Package: PG-DSOF-8-16 Applications: Board Mount Voltage - Supply: 4.5V ~ 5.5V Termination Style: SMD (SMT) Tab Operating Temperature: -40°C ~ 140°C (TA) Accuracy: ±0.65PSI (4.50kPa) Pressure Type: Absolute Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa) Output: 0.5 V ~ 4.5 V Mounting Type: Surface Mount Output Type: Analog Voltage Package / Case: 8-SMD Module Features: Amplified Output, Temperature Compensated Packaging: Bulk |
auf Bestellung 20777 Stücke: Lieferzeit 10-14 Tag (e) |
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PEF24911HV2.1 | Infineon Technologies |
Description: ISDN ECHOCANCELLER DFE Packaging: Bulk Part Status: Active |
auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
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PEF24911HV1.3 | Infineon Technologies |
Description: ISDN ECHOCANCELLER DFE Packaging: Bulk Part Status: Active |
auf Bestellung 20098 Stücke: Lieferzeit 10-14 Tag (e) |
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| TZ500N14KOFHPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TZ600N14KOFHPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Description: SCR MODULE 1.6KV 1050A MODULE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| REFFRIDGED111TRC2SLTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 472.75 EUR |
| TLV49645TBXALA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLI49631MXTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 4470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 36+ | 0.6 EUR |
| 38+ | 0.56 EUR |
| 41+ | 0.52 EUR |
| 50+ | 0.5 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |
| BSM400GA170DLS |
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Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 243.95 EUR |
| IPB80P03P4L07ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KITIM69D127V11FLEXTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.98 EUR |
| IFX2931GV33 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Current - Supply (Max): 15 mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 1.1V @ 100mA
PSRR: 80dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-8-1
Number of Regulators: 1
Voltage - Input (Max): 26V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC REG LINEAR FIXED POS LDO REG
Current - Supply (Max): 15 mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 1.1V @ 100mA
PSRR: 80dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-8-1
Number of Regulators: 1
Voltage - Input (Max): 26V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 1648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1648+ | 0.38 EUR |
| IFX8117MEV33 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Description: IC REG LINEAR FIXED LDO REG
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1501+ | 0.44 EUR |
| TLE4954CE4807BAMA1 |
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Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Description: SPEED & CURRENT SENSORS
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 3.8 EUR |
| BAV 99 E6433 |
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Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISP06P008NSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N04S6L014ATMA1 |
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Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.95 EUR |
| IAUC100N04S6L014ATMA1 |
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Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.31 EUR |
| 50+ | 1.75 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| IRFI7446GPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 40V 80A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 338+ | 1.7 EUR |
| BSF030NE2LQXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSF030NE2LQXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
auf Bestellung 4785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 11+ | 2 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.01 EUR |
| 2000+ | 0.94 EUR |
| TLF4949EJ |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
Description: IC REG LINEAR VOLT TLF4949
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 737+ | 0.86 EUR |
| BSF083N03LQG |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 717+ | 0.84 EUR |
| BSC205N10LSG |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
auf Bestellung 5751 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 662+ | 0.89 EUR |
| BSC029N025SG |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
auf Bestellung 8868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 402+ | 1.57 EUR |
| BSC886N03LSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Description: MOSFET N-CH 30V 13A/65A TDSON
auf Bestellung 8585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1205+ | 0.52 EUR |
| BAS70E6327 |
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Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: BAS70 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 107857 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3893+ | 0.17 EUR |
| IPL65R130CFD7AUMA1 |
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Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPL65R130CFD7AUMA1 |
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Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPT039N15N5ATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 4.61 EUR |
| IPT039N15N5ATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
auf Bestellung 3851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.34 EUR |
| 10+ | 8.29 EUR |
| 50+ | 6.56 EUR |
| 100+ | 6.01 EUR |
| 500+ | 5.63 EUR |
| BAT1706WE6327 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2834+ | 0.2 EUR |
| TT162N14KOFHPSA2 |
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Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 278.56 EUR |
| CY25404ZXI012 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 24.18 EUR |
| CY25404ZXI011 |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
auf Bestellung 3053 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 18.48 EUR |
| BGT60LTR11AIPE6327XUMA2 |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| BGT60LTR11AIPE6327XUMA2 |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
auf Bestellung 4602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.15 EUR |
| 10+ | 16.64 EUR |
| 25+ | 15.76 EUR |
| 100+ | 14.55 EUR |
| 250+ | 13.84 EUR |
| 500+ | 13.33 EUR |
| 1000+ | 12.85 EUR |
| SHIELDBGT60LTR11AIPTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Part Status: Active
Platform: Arduino MKR
Utilized IC / Part: BGT60LTR11AIP
Contents: Board(s)
Type: Sensor
Function: Radar
Packaging: Bulk
Description: EVAL BOARD FOR BGT60LTR11AIP
Part Status: Active
Platform: Arduino MKR
Utilized IC / Part: BGT60LTR11AIP
Contents: Board(s)
Type: Sensor
Function: Radar
Packaging: Bulk
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 61.56 EUR |
| 10+ | 61.42 EUR |
| 94-3250 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
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| IRF6601 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 26A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 26A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IRF6602 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| BCR521E6327 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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| DDB6U50N16W1RPB11BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 69.39 EUR |
| 30+ | 45.93 EUR |
| TLS850C2TEV50BOARDTOBO1 |
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Hersteller: Infineon Technologies
Description: TLS850C2TE V50 BOARD
Part Status: Active
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850C2TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Bulk
Description: TLS850C2TE V50 BOARD
Part Status: Active
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850C2TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 112.76 EUR |
| STT3300N18P76XPSA1 |
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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| SAL-TC270TP-64F200NDC |
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Hersteller: Infineon Technologies
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TC277TP64F200SDCKXUMA3 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| TC275TP64F200WDBKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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| TC277TP64F200SCAKXUMA2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC275TP64F200WCAKXQMA1 |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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| SAK-TC275TP-64F200N DC |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TC277TP64F200SDBKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC277TP64F200SDBKXUMA2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAL-TC270TP-64F200N DC |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Part Status: Active
Supplier Device Package: Die
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH DIE
Part Status: Active
Supplier Device Package: Die
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAL-TC270TP-64F200 CA |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAK-TC222L-12F133F AB |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE5109EVALKITTOBO2 |
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Hersteller: Infineon Technologies
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 110.12 EUR |
| REFICL8800LED43WTOBO1 |
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Hersteller: Infineon Technologies
Description: ICL8800 REF BOARD 43W
Part Status: Active
Outputs and Type: 1 Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: ICL8800
Voltage - Input: 90 ~ 305 VAC
Voltage - Output: 52V
Features: Dimmable
Packaging: Bulk
Description: ICL8800 REF BOARD 43W
Part Status: Active
Outputs and Type: 1 Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: ICL8800
Voltage - Input: 90 ~ 305 VAC
Voltage - Output: 52V
Features: Dimmable
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 83.48 EUR |
| EVALM1CM610N3TOBO2 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F3L11MR12W2M1C01BOMA1 |
Hersteller: Infineon Technologies
Description: IC SIC MOSFET LOW POWER
Description: IC SIC MOSFET LOW POWER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KP216K1409 |
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Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 140°C (TA)
Accuracy: ±0.65PSI (4.50kPa)
Pressure Type: Absolute
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Description: SENSOR 16.68PSIA 4.5V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 140°C (TA)
Accuracy: ±0.65PSI (4.50kPa)
Pressure Type: Absolute
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
auf Bestellung 20777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 7.27 EUR |
| PEF24911HV2.1 |
Hersteller: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 37.71 EUR |
| PEF24911HV1.3 |
Hersteller: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
auf Bestellung 20098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 39.16 EUR |





































