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TLI4970D050T5XUMA1 TLI4970D050T5XUMA1 Infineon Technologies TLI4970_D050T5_Rev1.2_3-21-19.pdf Description: SENSOR CURRENT HALL 50A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Unidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 1463 Stücke:
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52+9.73 EUR
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SHIELDBTS500251TEATOBO1 SHIELDBTS500251TEATOBO1 Infineon Technologies Infineon-BTS50025-1TEA_Demo_Board_Arduino_Shield-UserManual-v01_00-EN.pdf?fileId=5546d46271bf4f920171e9891a723e7f Description: SHIELD_BTS50025-1TEA
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTS50025-1TEA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
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IAUA250N04S6N007AUMA1 IAUA250N04S6N007AUMA1 Infineon Technologies Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
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IAUA250N04S6N007AUMA1 IAUA250N04S6N007AUMA1 Infineon Technologies Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS127IXTSA1 BSS127IXTSA1 Infineon Technologies Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
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3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
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BSS127IXTSA1 BSS127IXTSA1 Infineon Technologies Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
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44+0.41 EUR
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500+0.19 EUR
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BTS244ZE3062ANTMA1 BTS244ZE3062ANTMA1 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
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IR3513MTRPBF IR3513MTRPBF Infineon Technologies IR3513.pdf Description: IC XPHASE3 CONTROL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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25+4.99 EUR
100+4.74 EUR
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AUIR3242SBOARDB2BTOBO1 AUIR3242SBOARDB2BTOBO1 Infineon Technologies PdfFile_206876.pdf Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
Produkt ist nicht verfügbar
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EVALM3CM615PNTOBO2 Infineon Technologies Description: EVAL BOARD FOR IFCM15P60GD
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BCR119SH6327 Infineon Technologies INFNS11573-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BCR119S Infineon Technologies INFNS17179-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BCR119SH6327XTSA1 BCR119SH6327XTSA1 Infineon Technologies bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BCR 114T E6327 BCR 114T E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW SC75
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BCR 114L3 E6327 BCR 114L3 E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 114F E6327 BCR 114F E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSFP-3
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CY8C20045-24LKXIT CY8C20045-24LKXIT Infineon Technologies Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA89502VH6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16350 Stücke:
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5106+0.11 EUR
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TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
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TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
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5+4.34 EUR
10+4.14 EUR
25+3.91 EUR
50+3.75 EUR
100+3.6 EUR
500+3.31 EUR
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IGI60F1414A1LAUMA1 IGI60F1414A1LAUMA1 Infineon Technologies Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3 Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
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IMC302AF064XUMA1 IMC302AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
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10+9.76 EUR
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100+8.08 EUR
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IMC301AF064XUMA1 IMC301AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
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10+6.64 EUR
25+6.13 EUR
100+5.58 EUR
250+5.31 EUR
500+5.15 EUR
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SAF-XC886CM-6FFI 5V AC SAF-XC886CM-6FFI 5V AC Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
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ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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5000+1.15 EUR
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ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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7+2.85 EUR
10+2.55 EUR
100+1.99 EUR
500+1.64 EUR
1000+1.3 EUR
2000+1.21 EUR
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ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
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5000+1.02 EUR
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ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10539 Stücke:
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7+2.9 EUR
10+1.96 EUR
100+1.39 EUR
500+1.14 EUR
1000+1.05 EUR
2000+1.02 EUR
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ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Produkt ist nicht verfügbar
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ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1468 Stücke:
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10+1.88 EUR
100+1.25 EUR
500+0.98 EUR
1000+0.9 EUR
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ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4756 Stücke:
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4+5.16 EUR
10+3.35 EUR
100+2.32 EUR
500+1.89 EUR
1000+1.74 EUR
2000+1.66 EUR
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DD800S17H4_B2 Infineon Technologies INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw Description: DDXS17F - RECTIFIER DIODE MODULE
auf Bestellung 112 Stücke:
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1+1410.25 EUR
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DD800S17HA_B2 Infineon Technologies INFNS28235-1.pdf?t.download=true&u=ovmfp3 Description: RECTIFIER DIODE MODULE
Packaging: Bulk
auf Bestellung 18 Stücke:
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AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
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AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9399 Stücke:
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3+7.5 EUR
10+4.96 EUR
100+3.51 EUR
500+2.9 EUR
1000+2.75 EUR
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BAT54-04E6327 BAT54-04E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 45000 Stücke:
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BAT54-06E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
auf Bestellung 163000 Stücke:
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BAT54-05E6327 BAT54-05E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 41151 Stücke:
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5602+0.088 EUR
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T3800N16TOFVTXPSA1 T3800N16TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
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TLE4253EXUMA2 TLE4253EXUMA2 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18017 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
10+1.98 EUR
25+1.8 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.39 EUR
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TLE4253GSXUMA4 TLE4253GSXUMA4 Infineon Technologies Infineon-TLE4253-DataSheet-v01_21-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+1.04 EUR
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TLE4253GSXUMA1 TLE4253GSXUMA1 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4253GSXUMA1 TLE4253GSXUMA1 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Produkt ist nicht verfügbar
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BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 521602 Stücke:
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4418+0.12 EUR
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IPLK80R750P7ATMA1 IPLK80R750P7ATMA1 Infineon Technologies Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK80R750P7ATMA1 IPLK80R750P7ATMA1 Infineon Technologies Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
auf Bestellung 1596 Stücke:
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10+2.24 EUR
100+1.52 EUR
500+1.21 EUR
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IPLK70R750P7ATMA1 IPLK70R750P7ATMA1 Infineon Technologies Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76 Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK70R750P7ATMA1 IPLK70R750P7ATMA1 Infineon Technologies Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76 Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
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IPLK80R2K0P7ATMA1 IPLK80R2K0P7ATMA1 Infineon Technologies Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3 Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK80R2K0P7ATMA1 IPLK80R2K0P7ATMA1 Infineon Technologies Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3 Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPLK80R900P7ATMA1 IPLK80R900P7ATMA1 Infineon Technologies Infineon-IPLK80R900P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1bd6c02c8 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
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IPLK80R1K2P7ATMA1 IPLK80R1K2P7ATMA1 Infineon Technologies Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256 Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK80R1K2P7ATMA1 IPLK80R1K2P7ATMA1 Infineon Technologies Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256 Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPLK70R1K2P7ATMA1 IPLK70R1K2P7ATMA1 Infineon Technologies Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK70R1K2P7ATMA1 IPLK70R1K2P7ATMA1 Infineon Technologies Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IPLK70R1K4P7ATMA1 IPLK70R1K4P7ATMA1 Infineon Technologies Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPLK70R1K4P7ATMA1 IPLK70R1K4P7ATMA1 Infineon Technologies Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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REFXDPL8219U40WTOBO1 REFXDPL8219U40WTOBO1 Infineon Technologies Infineon-Engineering_report_REF-XDPL8219-U40W-ApplicationNotes-v01_01-EN.pdf?fileId=5546d462737c45b901739fceff16729b Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
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1+185.75 EUR
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SIGC14T60SNCX1SA3 Infineon Technologies SIGC14T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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TLI4970D050T5XUMA1 TLI4970_D050T5_Rev1.2_3-21-19.pdf
TLI4970D050T5XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Qualification: AEC-Q100
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-TISON-8-1
Current - Sensing: 50A
Current - Supply (Max): 20mA
For Measuring: AC/DC
Linearity: ±1.6%
Sensor Type: Hall Effect, Differential
Response Time: 57µs
Voltage - Supply: 3.1V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±0.05%
Frequency: DC ~ 18kHz
Output: SPI
Mounting Type: Surface Mount
Polarization: Unidirectional
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 1463 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
52+9.73 EUR
Mindestbestellmenge: 52 Stücke
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SHIELDBTS500251TEATOBO1 Infineon-BTS50025-1TEA_Demo_Board_Arduino_Shield-UserManual-v01_00-EN.pdf?fileId=5546d46271bf4f920171e9891a723e7f
SHIELDBTS500251TEATOBO1
Hersteller: Infineon Technologies
Description: SHIELD_BTS50025-1TEA
Part Status: Active
Platform: Arduino
Utilized IC / Part: BTS50025-1TEA
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
auf Bestellung 3 Stücke:
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AnzahlPreis
1+87.44 EUR
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IAUA250N04S6N007AUMA1
IAUA250N04S6N007AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUA250N04S6N007AUMA1
IAUA250N04S6N007AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
BSS127IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
BSS127IXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 11211 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
44+0.41 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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BTS244ZE3062ANTMA1 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3062ANTMA1
Hersteller: Infineon Technologies
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
670+0.79 EUR
Mindestbestellmenge: 670 Stücke
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IR3513MTRPBF IR3513.pdf
IR3513MTRPBF
Hersteller: Infineon Technologies
Description: IC XPHASE3 CONTROL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.25 EUR
10+5.32 EUR
25+4.99 EUR
100+4.74 EUR
Mindestbestellmenge: 3 Stücke
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AUIR3242SBOARDB2BTOBO1 PdfFile_206876.pdf
AUIR3242SBOARDB2BTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
Produkt ist nicht verfügbar
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EVALM3CM615PNTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IFCM15P60GD
auf Bestellung 3 Stücke:
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AnzahlPreis
1+196.38 EUR
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BCR119SH6327 INFNS11573-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR119S INFNS17179-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR119SH6327XTSA1 bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
BCR119SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
auf Bestellung 17800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5352+0.1 EUR
Mindestbestellmenge: 5352 Stücke
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BCR 114T E6327 BCR114%20(2003).pdf
BCR 114T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Produkt ist nicht verfügbar
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BCR 114L3 E6327 BCR114%20(2003).pdf
BCR 114L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Produkt ist nicht verfügbar
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BCR 114F E6327 BCR114%20(2003).pdf
BCR 114F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Produkt ist nicht verfügbar
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CY8C20045-24LKXIT Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign
CY8C20045-24LKXIT
Hersteller: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
DigiKey Programmable: Not Verified
Supplier Device Package: 16-QFN (3x3)
Core Processor: M8C
Applications: Capacitive Sensing
Controller Series: CY8C20045
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BA89502VH6327XTSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 16350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5106+0.11 EUR
Mindestbestellmenge: 5106 Stücke
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TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Package / Case: 3-SSIP Module
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Supplier Device Package: PG-SSO-3-53
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.86 EUR
5+4.34 EUR
10+4.14 EUR
25+3.91 EUR
50+3.75 EUR
100+3.6 EUR
500+3.31 EUR
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IGI60F1414A1LAUMA1 Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3
IGI60F1414A1LAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Part Status: Active
Load Type: Inductive, Resistive
Supplier Device Package: PG-TIQFN-28-1
Applications: General Purpose
Rds On (Typ): 140mOhm LS, 140mOhm HS
Output Configuration: Half Bridge (2)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 28-PowerTQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMC302AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC302AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 41
Supplier Device Package: 64-QFP (10x10)
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.81 EUR
10+9.76 EUR
25+9.31 EUR
100+8.08 EUR
Mindestbestellmenge: 2 Stücke
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IMC301AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC301AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 1567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.68 EUR
10+6.64 EUR
25+6.13 EUR
100+5.58 EUR
250+5.31 EUR
500+5.15 EUR
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SAF-XC886CM-6FFI 5V AC Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
SAF-XC886CM-6FFI 5V AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 24KB (24K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.15 EUR
Mindestbestellmenge: 5000 Stücke
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ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 6987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.85 EUR
10+2.55 EUR
100+1.99 EUR
500+1.64 EUR
1000+1.3 EUR
2000+1.21 EUR
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ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.02 EUR
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ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.9 EUR
10+1.96 EUR
100+1.39 EUR
500+1.14 EUR
1000+1.05 EUR
2000+1.02 EUR
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Produkt ist nicht verfügbar
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.97 EUR
10+1.88 EUR
100+1.25 EUR
500+0.98 EUR
1000+0.9 EUR
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ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.16 EUR
10+3.35 EUR
100+2.32 EUR
500+1.89 EUR
1000+1.74 EUR
2000+1.66 EUR
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DD800S17H4_B2 INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
auf Bestellung 112 Stücke:
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AnzahlPreis
1+1410.25 EUR
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DD800S17HA_B2 INFNS28235-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Packaging: Bulk
auf Bestellung 18 Stücke:
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AnzahlPreis
1+880.32 EUR
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AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4800+2.75 EUR
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AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.5 EUR
10+4.96 EUR
100+3.51 EUR
500+2.9 EUR
1000+2.75 EUR
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BAT54-04E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-04E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5602+0.082 EUR
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BAT54-06E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
auf Bestellung 163000 Stücke:
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AnzahlPreis
5170+0.11 EUR
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BAT54-05E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-05E6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 41151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5602+0.088 EUR
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T3800N16TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
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TLE4253EXUMA2 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.71 EUR
10+1.98 EUR
25+1.8 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.39 EUR
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TLE4253GSXUMA4 Infineon-TLE4253-DataSheet-v01_21-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA4
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.04 EUR
Mindestbestellmenge: 2500 Stücke
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TLE4253GSXUMA1 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 40V
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Grade: Automotive
Control Features: Enable
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4253GSXUMA1 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 150 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): Tracking
Supplier Device Package: PG-DSO-8
Qualification: AEC-Q100
Current - Supply (Max): 15 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 60dB (100Hz)
Produkt ist nicht verfügbar
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BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf
BCR583E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 521602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4418+0.12 EUR
Mindestbestellmenge: 4418 Stücke
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IPLK80R750P7ATMA1 Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed
IPLK80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R750P7ATMA1 Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed
IPLK80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.5 EUR
10+2.24 EUR
100+1.52 EUR
500+1.21 EUR
1000+1.11 EUR
Mindestbestellmenge: 6 Stücke
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IPLK70R750P7ATMA1 Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76
IPLK70R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R750P7ATMA1 Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76
IPLK70R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R2K0P7ATMA1 Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3
IPLK80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R2K0P7ATMA1 Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3
IPLK80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R900P7ATMA1 Infineon-IPLK80R900P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1bd6c02c8
IPLK80R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R1K2P7ATMA1 Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256
IPLK80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLK80R1K2P7ATMA1 Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256
IPLK80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R1K2P7ATMA1 Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a
IPLK70R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R1K2P7ATMA1 Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a
IPLK70R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R1K4P7ATMA1 Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d
IPLK70R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPLK70R1K4P7ATMA1 Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d
IPLK70R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Drain to Source Voltage (Vdss): 700 V
Part Status: Active
Supplier Device Package: PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
REFXDPL8219U40WTOBO1 Infineon-Engineering_report_REF-XDPL8219-U40W-ApplicationNotes-v01_01-EN.pdf?fileId=5546d462737c45b901739fceff16729b
REFXDPL8219U40WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XDPL8219
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+185.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIGC14T60SNCX1SA3 SIGC14T60SNC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Test Condition: 400V, 15A, 21Ohm, 15V
Td (on/off) @ 25°C: 31ns/261ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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