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CYW20705B0KWFBGT CYW20705B0KWFBGT Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20735PKML1G CYW20735PKML1G Infineon Technologies Infineon-CYW20735B1_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2047c6842&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -94.5dBm
Package / Case: 60-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 60
Supplier Device Package: 60-QFN (7x7)
Current - Transmitting: 18mA
Data Rate (Max): 2Mbps
Current - Receiving: 8mA
Protocol: Bluetooth v4.2
Power - Output: 10dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
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CYW20730A1KML2GT CYW20730A1KML2GT Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Supplier Device Package: 32-QFN (5x5)
Current - Transmitting: 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 3.8V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
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CHL8104-03CRT CHL8104-03CRT Infineon Technologies CHL8102_03_04_13_PB_V1.09_8-28-13.pdf Description: IC REG BUCK 40VQFN
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Output Phases: 4
Serial Interfaces: I²C
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-40-903
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Number of Outputs: 5
Part Status: Obsolete
Clock Sync: No
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TC277T64F200SDCKXUMA2 TC277T64F200SDCKXUMA2 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
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MR16 7W BOARD MR16 7W BOARD Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD MR16 7W ILD4001
Packaging: Box
Voltage - Output: 6.5V
Voltage - Input: 12VAC
Current - Output / Channel: 770mA
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
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MR16 10W BOARD MR16 10W BOARD Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD MR16 10W ILD4001
Packaging: Box
Voltage - Output: 6.6V
Voltage - Input: 12VAC
Current - Output / Channel: 1.02A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
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CY14B108L-ZS45XI CY14B108L-ZS45XI Infineon Technologies ?docID=50893 Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 Infineon Technologies Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910 Description: MOSFET N-CH 40V 70A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 17µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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500+0.7 EUR
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BGA622E6327 BGA622E6327 Infineon Technologies INFNS12498-1.pdf?t.download=true&u=5oefqw Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4
Part Status: Active
Supplier Device Package: PG-SOT343-4
Test Frequency: 2GHz
P1dB: 12dBm
Noise Figure: 2.1dB
Current - Supply: 80mA
Gain: 17.5dB
Voltage - Supply: 3V
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Frequency: 0Hz ~ 2.4GHz
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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IPBE65R190CFD7AATMA1 IPBE65R190CFD7AATMA1 Infineon Technologies Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6 Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPBE65R190CFD7AATMA1 IPBE65R190CFD7AATMA1 Infineon Technologies Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6 Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPW65R190CFD7AXKSA1 IPW65R190CFD7AXKSA1 Infineon Technologies Infineon-IPW65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c37992842c0 Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPW65R145CFD7AXKSA1 IPW65R145CFD7AXKSA1 Infineon Technologies Infineon-IPW65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ed46c42bd Description: MOSFET N-CH 650V 17A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IPBE65R145CFD7AATMA1 Infineon Technologies Infineon-IPBE65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176d20fa339326f Description: AUTOMOTIVE PG-TO263-7
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IPN10ELSXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC GATE DRVR HALF-BRIDGE SSOP-14
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EVAL1ED020I12F2DBTOBO1 EVAL1ED020I12F2DBTOBO1 Infineon Technologies Infineon-UG-2021-27_EVAL-1ED020I12F2-DB-UserManual-v01_01-EN.pdf?fileId=5546d4627aa5d4f5017ae1e966a8658f Description: EVAL BOARD FOR 1ED020I12F2
Part Status: Active
Utilized IC / Part: 1ED020I12F2
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
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IR3567AMGB02TRP IR3567AMGB02TRP Infineon Technologies IR3567A_PB_v3.04_10-1-13.pdf Description: IC REG BUCK 56VQFN
Number of Outputs: 8
Part Status: Obsolete
Clock Sync: No
Output Phases: 6
Serial Interfaces: I²C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-56-900
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS225R17OE4BOSA1 FS225R17OE4BOSA1 Infineon Technologies Infineon-FS225R17OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff901369d0c2b93735b Description: IGBT MOD 1700V 350A 1450W
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 350 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IGT60R190D1ATMA1 IGT60R190D1ATMA1 Infineon Technologies Description: GAN HV
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SAK-TC265DE-40F200N BC SAK-TC265DE-40F200N BC Infineon Technologies Infineon-TC2xx_EABI-UM-v02_09-EN.pdf?fileId=5546d46269bda8df0169ca1bfc7d24ab Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Part Status: Active
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 53x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 16K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
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F4200R17N3E4B58BPSA1 F4200R17N3E4B58BPSA1 Infineon Technologies Infineon-F4-200R17N3E4_B58-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed48e8a032635 Description: LOW POWER ECONO AG-ECONO3B-411
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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CY7C168A-20PXC CY7C168A-20PXC Infineon Technologies CY7C168A.pdf Description: IC SRAM 16KBIT PARALLEL 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 20-DIP
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 4
DigiKey Programmable: Not Verified
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DCSHIELDBTN7030TOBO1 DCSHIELDBTN7030TOBO1 Infineon Technologies Infineon-Arduino_Shield_BTN7030-UserManual-v01_00-EN.pdf?fileId=5546d46276fb756a017725f5e1de5c95 Description: DC-SHIELD_BTN7030
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN7030-1EPA
Platform: Arduino
Part Status: Active
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DCSHIELDBTN9970LVTOBO1 DCSHIELDBTN9970LVTOBO1 Infineon Technologies Infineon-User_Manual_BTN9960_BTN9970_BTN9990_Motor_control_shield-UserManual-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188e2e795766aae Description: DC SHIELD EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9970, BTN9990
Platform: Arduino
Part Status: Active
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2EDN7524RXTMA1 2EDN7524RXTMA1 Infineon Technologies infineon-2edl50x3u2d-datasheet-en.pdf Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 20 V
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100+1.1 EUR
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1000+0.95 EUR
2500+0.92 EUR
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2EDN8524RXTMA1 2EDN8524RXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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25+1.26 EUR
100+1.11 EUR
250+1.04 EUR
500+1 EUR
1000+0.96 EUR
2500+0.92 EUR
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2EDN7523RXTMA1 2EDN7523RXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL65R230C7AUMA1 IPL65R230C7AUMA1 Infineon Technologies Infineon-IPL65R230C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e798fa6d80332 Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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10+2.96 EUR
100+2.04 EUR
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EVALIM67D120FLEXKITTOBO1 EVALIM67D120FLEXKITTOBO1 Infineon Technologies Infineon-Microphoneflexevaluationkit-ProductBrief-v01_01-EN.pdf?fileId=5546d4626f229553016fa43619613de2 Description: EVAL BOARD FOR IM67D120
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM67D120
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
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AN985B-BG-T-V1 AN985B-BG-T-V1 Infineon Technologies Description: CARDBUS-TO ETHERNET LAN CONTROLL
Packaging: Bulk
DigiKey Programmable: Not Verified
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SAK-TC265DC-40F200W BC SAK-TC265DC-40F200W BC Infineon Technologies Infineon-TC26xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT
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SAK-TC265DC-40F200W BB SAK-TC265DC-40F200W BB Infineon Technologies Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 112
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 50x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
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SAK-TC265DE-40F200W BB Infineon Technologies Description: IC MICROCONTROLLER
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SAK-TC265DE-40F200Q BB Infineon Technologies Description: IC MICROCONTROLLER
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S25FL116K0XBHI030 S25FL116K0XBHI030 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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S25FL116K0XMFN041 S25FL116K0XMFN041 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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S25FL116K0XNFB013 S25FL116K0XNFB013 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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S25FL116K0XBHB030 S25FL116K0XBHB030 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 24BGA
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S25FL116K0XMFB041 S25FL116K0XMFB041 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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S25FL116K0XNFB010 S25FL116K0XNFB010 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
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S25FL116K0XMFB043 S25FL116K0XMFB043 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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ISC036N04NM5ATMA1 ISC036N04NM5ATMA1 Infineon Technologies Infineon-ISC036N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e48119000d Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
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ISC036N04NM5ATMA1 ISC036N04NM5ATMA1 Infineon Technologies Infineon-ISC036N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e48119000d Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
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8+2.2 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
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TDA21590AUMA1 TDA21590AUMA1 Infineon Technologies Infineon-TDA21590-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d16aa6cfc185d&ack=t Description: IC REG BUCK 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Supplier Device Package: PG-IQFN-39
Synchronous Rectifier: No
Part Status: Active
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BB 689 E7903 BB 689 E7903 Infineon Technologies bb669_bb689series.pdf Description: DIODE TUNING 30V 20MA SCD-80
Capacitance Ratio: 23.2
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: SCD-80
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDD05SG60C IDD05SG60C Infineon Technologies INFNS19785-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 5A TO252-3
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
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IDH03SG60C IDH03SG60C Infineon Technologies INFNS19739-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 3A TO220-2-2
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
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IMZA65R083M1HXKSA1 IMZA65R083M1HXKSA1 Infineon Technologies Infineon-IMZA65R083M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c878f3c6e Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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10+19.25 EUR
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IMBG120R060M1HXTMA1 IMBG120R060M1HXTMA1 Infineon Technologies Infineon-IMBG120R060M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecd5ef3266 Description: SICFET N-CH 1200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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IMBG120R060M1HXTMA1 IMBG120R060M1HXTMA1 Infineon Technologies Infineon-IMBG120R060M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecd5ef3266 Description: SICFET N-CH 1200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
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BTS117AKSA1 BTS117AKSA1 Infineon Technologies Description: IC PWR SWITCH
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO220-3-1
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Auto Restart, Slew Rate Controlled
Packaging: Tube
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IRU431ALCS IRU431ALCS Infineon Technologies IRU431L%2CAL%20Rev1.3.pdf Description: IC VREF SHUNT ADJ 0.5% 8SOIC
Voltage - Output (Max): 15 V
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: 8-SOIC
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±0.5%
Packaging: Tube
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
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IRU431-L5TR IRU431-L5TR Infineon Technologies iru431l.pdf Description: IC VREF SHUNT ADJ 1% SOT23-5
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: SC-74A, SOT-753
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: SOT-23-5
Produkt ist nicht verfügbar
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IRU431LCS IRU431LCS Infineon Technologies IRU431L%20Rev1.7.pdf Description: IC VREF SHUNT ADJ 1% 8SOIC
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1%
Packaging: Tube
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: 8-SOIC
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
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IRU431-L3TR IRU431-L3TR Infineon Technologies iru431l.pdf Description: IC VREF SHUNT ADJ 1% SOT23
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: Micro3™/SOT-23
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1%
Packaging: Tape & Reel (TR)
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 Mindestbestellmenge: 3000 Stücke
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IRU431LCSTR IRU431LCSTR Infineon Technologies IRU431L%20Rev1.7.pdf Description: IC VREF SHUNT ADJ 1% 8SOIC
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: 8-SOIC
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPC60R070CFD7X7SA1 Infineon Technologies Description: MOSFET N-CH HI POWER WAFER
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IPP040N06NF2SAKMA1 IPP040N06NF2SAKMA1 Infineon Technologies Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86 Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 52µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
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6+2.96 EUR
50+1.42 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
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IFF150B12U1E4BOMA1 Infineon Technologies Description: INTELLIGENT POWER MODULE (IPM)
auf Bestellung 30 Stücke:
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3+192.99 EUR
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CYW20705B0KWFBGT Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705B0KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20735PKML1G Infineon-CYW20735B1_Single_Chip_Bluetooth_Transceiver_for_Wireless_Input_Devices-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2047c6842&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat
CYW20735PKML1G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -94.5dBm
Package / Case: 60-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 60
Supplier Device Package: 60-QFN (7x7)
Current - Transmitting: 18mA
Data Rate (Max): 2Mbps
Current - Receiving: 8mA
Protocol: Bluetooth v4.2
Power - Output: 10dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Produkt ist nicht verfügbar
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CYW20730A1KML2GT CYW20730_RevJ_4-25-17.pdf
CYW20730A1KML2GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Supplier Device Package: 32-QFN (5x5)
Current - Transmitting: 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 3.8V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Produkt ist nicht verfügbar
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CHL8104-03CRT CHL8102_03_04_13_PB_V1.09_8-28-13.pdf
CHL8104-03CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Output Phases: 4
Serial Interfaces: I²C
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-40-903
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Number of Outputs: 5
Part Status: Obsolete
Clock Sync: No
Produkt ist nicht verfügbar
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TC277T64F200SDCKXUMA2 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277T64F200SDCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
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1000+33.82 EUR
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MR16 7W BOARD fundamentals-of-power-semiconductors
MR16 7W BOARD
Hersteller: Infineon Technologies
Description: EVAL BOARD MR16 7W ILD4001
Packaging: Box
Voltage - Output: 6.5V
Voltage - Input: 12VAC
Current - Output / Channel: 770mA
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
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MR16 10W BOARD fundamentals-of-power-semiconductors
MR16 10W BOARD
Hersteller: Infineon Technologies
Description: EVAL BOARD MR16 10W ILD4001
Packaging: Box
Voltage - Output: 6.6V
Voltage - Input: 12VAC
Current - Output / Channel: 1.02A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
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CY14B108L-ZS45XI ?docID=50893
CY14B108L-ZS45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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IPC70N04S5L4R2ATMA1 Infineon-IPC70N04S5L-4R2-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801f5a62910
IPC70N04S5L4R2ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 2V @ 17µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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11+1.6 EUR
15+1.2 EUR
100+0.85 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.6 EUR
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BGA622E6327 INFNS12498-1.pdf?t.download=true&u=5oefqw
BGA622E6327
Hersteller: Infineon Technologies
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4
Part Status: Active
Supplier Device Package: PG-SOT343-4
Test Frequency: 2GHz
P1dB: 12dBm
Noise Figure: 2.1dB
Current - Supply: 80mA
Gain: 17.5dB
Voltage - Supply: 3V
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Frequency: 0Hz ~ 2.4GHz
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Produkt ist nicht verfügbar
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IPBE65R190CFD7AATMA1 Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6
IPBE65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPBE65R190CFD7AATMA1 Infineon-IPBE65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c53259942c6
IPBE65R190CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPW65R190CFD7AXKSA1 Infineon-IPW65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c37992842c0
IPW65R190CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPW65R145CFD7AXKSA1 Infineon-IPW65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ed46c42bd
IPW65R145CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 17A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPBE65R145CFD7AATMA1 Infineon-IPBE65R145CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176d20fa339326f
Hersteller: Infineon Technologies
Description: AUTOMOTIVE PG-TO263-7
Produkt ist nicht verfügbar
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IPN10ELSXUMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE SSOP-14
auf Bestellung 237500 Stücke:
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473+1.12 EUR
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EVAL1ED020I12F2DBTOBO1 Infineon-UG-2021-27_EVAL-1ED020I12F2-DB-UserManual-v01_01-EN.pdf?fileId=5546d4627aa5d4f5017ae1e966a8658f
EVAL1ED020I12F2DBTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12F2
Part Status: Active
Utilized IC / Part: 1ED020I12F2
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Produkt ist nicht verfügbar
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IR3567AMGB02TRP IR3567A_PB_v3.04_10-1-13.pdf
IR3567AMGB02TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 56VQFN
Number of Outputs: 8
Part Status: Obsolete
Clock Sync: No
Output Phases: 6
Serial Interfaces: I²C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-56-900
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS225R17OE4BOSA1 Infineon-FS225R17OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff901369d0c2b93735b
FS225R17OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 350A 1450W
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 350 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IGT60R190D1ATMA1
IGT60R190D1ATMA1
Hersteller: Infineon Technologies
Description: GAN HV
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SAK-TC265DE-40F200N BC Infineon-TC2xx_EABI-UM-v02_09-EN.pdf?fileId=5546d46269bda8df0169ca1bfc7d24ab
SAK-TC265DE-40F200N BC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Part Status: Active
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 53x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 16K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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F4200R17N3E4B58BPSA1 Infineon-F4-200R17N3E4_B58-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed48e8a032635
F4200R17N3E4B58BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+244.76 EUR
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CY7C168A-20PXC CY7C168A.pdf
CY7C168A-20PXC
Hersteller: Infineon Technologies
Description: IC SRAM 16KBIT PARALLEL 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 20-DIP
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 4
DigiKey Programmable: Not Verified
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AnzahlPreis
42+11.84 EUR
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DCSHIELDBTN7030TOBO1 Infineon-Arduino_Shield_BTN7030-UserManual-v01_00-EN.pdf?fileId=5546d46276fb756a017725f5e1de5c95
DCSHIELDBTN7030TOBO1
Hersteller: Infineon Technologies
Description: DC-SHIELD_BTN7030
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN7030-1EPA
Platform: Arduino
Part Status: Active
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AnzahlPreis
1+75.73 EUR
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DCSHIELDBTN9970LVTOBO1 Infineon-User_Manual_BTN9960_BTN9970_BTN9990_Motor_control_shield-UserManual-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188e2e795766aae
DCSHIELDBTN9970LVTOBO1
Hersteller: Infineon Technologies
Description: DC SHIELD EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9970, BTN9990
Platform: Arduino
Part Status: Active
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AnzahlPreis
1+107.18 EUR
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2EDN7524RXTMA1 infineon-2edl50x3u2d-datasheet-en.pdf
2EDN7524RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
High Side Voltage - Max (Bootstrap): 20 V
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10+1.92 EUR
13+1.38 EUR
25+1.25 EUR
100+1.1 EUR
250+1.03 EUR
500+0.99 EUR
1000+0.95 EUR
2500+0.92 EUR
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2EDN8524RXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2968 Stücke:
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10+1.94 EUR
13+1.39 EUR
25+1.26 EUR
100+1.11 EUR
250+1.04 EUR
500+1 EUR
1000+0.96 EUR
2500+0.92 EUR
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2EDN7523RXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPL65R230C7AUMA1 Infineon-IPL65R230C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e798fa6d80332
IPL65R230C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 10354 Stücke:
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4+4.56 EUR
10+2.96 EUR
100+2.04 EUR
500+1.71 EUR
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EVALIM67D120FLEXKITTOBO1 Infineon-Microphoneflexevaluationkit-ProductBrief-v01_01-EN.pdf?fileId=5546d4626f229553016fa43619613de2
EVALIM67D120FLEXKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM67D120
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM67D120
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
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AN985B-BG-T-V1
AN985B-BG-T-V1
Hersteller: Infineon Technologies
Description: CARDBUS-TO ETHERNET LAN CONTROLL
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 1440 Stücke:
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AnzahlPreis
102+4.9 EUR
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SAK-TC265DC-40F200W BC Infineon-TC26xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
SAK-TC265DC-40F200W BC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT
Produkt ist nicht verfügbar
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SAK-TC265DC-40F200W BB
SAK-TC265DC-40F200W BB
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 112
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 50x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 240K x 8
Program Memory Size: 2.5MB (2.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SAK-TC265DE-40F200W BB
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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SAK-TC265DE-40F200Q BB
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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S25FL116K0XBHI030 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XBHI030
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
auf Bestellung 10 Stücke:
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S25FL116K0XMFN041 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFN041
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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S25FL116K0XNFB013 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XNFB013
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S25FL116K0XBHB030 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XBHB030
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Produkt ist nicht verfügbar
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S25FL116K0XMFB041 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFB041
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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S25FL116K0XNFB010 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XNFB010
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Produkt ist nicht verfügbar
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S25FL116K0XMFB043 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFB043
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISC036N04NM5ATMA1 Infineon-ISC036N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e48119000d
ISC036N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
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ISC036N04NM5ATMA1 Infineon-ISC036N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e48119000d
ISC036N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 1759 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.2 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
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TDA21590AUMA1 Infineon-TDA21590-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d16aa6cfc185d&ack=t
TDA21590AUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Supplier Device Package: PG-IQFN-39
Synchronous Rectifier: No
Part Status: Active
Produkt ist nicht verfügbar
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BB 689 E7903 bb669_bb689series.pdf
BB 689 E7903
Hersteller: Infineon Technologies
Description: DIODE TUNING 30V 20MA SCD-80
Capacitance Ratio: 23.2
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: SCD-80
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IDD05SG60C INFNS19785-1.pdf?t.download=true&u=5oefqw
IDD05SG60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO252-3
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
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IDH03SG60C INFNS19739-1.pdf?t.download=true&u=5oefqw
IDH03SG60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-2
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
auf Bestellung 68889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
288+1.69 EUR
Mindestbestellmenge: 288 Stücke
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IMZA65R083M1HXKSA1 Infineon-IMZA65R083M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c878f3c6e
IMZA65R083M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+20.94 EUR
10+19.25 EUR
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IMBG120R060M1HXTMA1 Infineon-IMBG120R060M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecd5ef3266
IMBG120R060M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IMBG120R060M1HXTMA1 Infineon-IMBG120R060M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecd5ef3266
IMBG120R060M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.38 EUR
10+9.87 EUR
100+7.98 EUR
Mindestbestellmenge: 2 Stücke
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BTS117AKSA1
BTS117AKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO220-3-1
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Auto Restart, Slew Rate Controlled
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IRU431ALCS IRU431L%2CAL%20Rev1.3.pdf
IRU431ALCS
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 0.5% 8SOIC
Voltage - Output (Max): 15 V
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: 8-SOIC
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±0.5%
Packaging: Tube
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 95 Stücke
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IRU431-L5TR iru431l.pdf
IRU431-L5TR
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% SOT23-5
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: SC-74A, SOT-753
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: SOT-23-5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRU431LCS IRU431L%20Rev1.7.pdf
IRU431LCS
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% 8SOIC
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1%
Packaging: Tube
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: 8-SOIC
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Produkt ist nicht verfügbar
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IRU431-L3TR iru431l.pdf
IRU431-L3TR
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% SOT23
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: Micro3™/SOT-23
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRU431LCSTR IRU431L%20Rev1.7.pdf
IRU431LCSTR
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% 8SOIC
Voltage - Output (Max): 15 V
Current - Output: 10 mA
Current - Cathode: 80 µA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.24V
Supplier Device Package: 8-SOIC
Operating Temperature: 0°C ~ 70°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPC60R070CFD7X7SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
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IPP040N06NF2SAKMA1 Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86
IPP040N06NF2SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 52µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.96 EUR
50+1.42 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 6 Stücke
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IFF150B12U1E4BOMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+192.99 EUR
Mindestbestellmenge: 3 Stücke
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