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ESD3V3S1B-02LSE6327XTSA1 ESD3V3S1B-02LSE6327XTSA1 Infineon Technologies INFNS19168-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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V23809C8C10 Infineon Technologies Description: FAST ETHERNET TRANSCEICER
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V23809-C8-C10 Infineon Technologies Description: FAST ETHERNET TRANSCEICER
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SIDC07D60F6X1SA3 Infineon Technologies SIDC07D60F6_ed2.1_9-3-10.pdf Description: DIODE SWITCHING 600V WAFER
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 Infineon Technologies Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972 Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 Infineon Technologies Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972 Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
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IRFR2307ZTRLPBF IRFR2307ZTRLPBF Infineon Technologies irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074 Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
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IPT044N15N5ATMA1 IPT044N15N5ATMA1 Infineon Technologies infineon-ipt044n15n5-datasheet-en.pdf Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
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IPT044N15N5ATMA1 IPT044N15N5ATMA1 Infineon Technologies infineon-ipt044n15n5-datasheet-en.pdf Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
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IPT054N15N5ATMA1 IPT054N15N5ATMA1 Infineon Technologies Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Produkt ist nicht verfügbar
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IPT054N15N5ATMA1 IPT054N15N5ATMA1 Infineon Technologies Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
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100+6.32 EUR
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AUXHMF7321D2 AUXHMF7321D2 Infineon Technologies IRF7321D2PBF.pdf Description: MOSFET P-CH 30V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
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MB95F654ENPFT-G101SNERE2 MB95F654ENPFT-G101SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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MB95F564KNPFT-G107SNERE2 MB95F564KNPFT-G107SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 20KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 ISC007N04NM6ATMA1 Infineon Technologies infineon-isc007n04nm6-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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ISC007N04NM6ATMA1 ISC007N04NM6ATMA1 Infineon Technologies infineon-isc007n04nm6-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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500+2.32 EUR
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ISC017N04NM5ATMA1 ISC017N04NM5ATMA1 Infineon Technologies infineon-isc017n04nm5-datasheet-en.pdf Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Produkt ist nicht verfügbar
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ISC017N04NM5ATMA1 ISC017N04NM5ATMA1 Infineon Technologies infineon-isc017n04nm5-datasheet-en.pdf Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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11+2.03 EUR
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100+1.36 EUR
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BGS1711MC222IE6433XUSA1 Infineon Technologies Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
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DF23MR12W1M1B11BOMA1244 Infineon Technologies INFN-S-A0003553949-1.pdf?t.download=true&u=5oefqw Description: MOSFET
Packaging: Bulk
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EVAL6EDL7141TRAP1SHTOBO1 EVAL6EDL7141TRAP1SHTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_6EDL7141_TRAP_1SH-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46279cccfdb017a0ae054e624bd&da=t Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU, 32-Bit
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EVALIMD700AFOC3SHTOBO1 EVALIMD700AFOC3SHTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_IMD700A_FOC_3SH-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fdf3691800b9d Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
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BGH 182M E6327 Infineon Technologies Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372 Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
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TC1796256F150EXBEKDUMA1 TC1796256F150EXBEKDUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ACCESSORY26649NOSA1 Infineon Technologies Description: ACCESSORY 26649
Produkt ist nicht verfügbar
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CY7C1645KV18-400BZXI CY7C1645KV18-400BZXI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI60R250CP IPI60R250CP Infineon Technologies INFNS17424-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
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ILD4180 ILD4180 Infineon Technologies INFNS15343-1.pdf?t.download=true&u=5oefqw Description: SWITCHING REGULATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
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LD403524VBOARDTOBO1 LD403524VBOARDTOBO1 Infineon Technologies ILD4035.pdf Description: BOARD EVAL ILD4035 24V
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TT820N16KOFHPSA1 TT820N16KOFHPSA1 Infineon Technologies Infineon-TT820N16KOF-DataSheet-v03_02-EN.pdf?fileId=5546d46269e1c0190169e2e4577001f3 Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 820 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
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SAK-TC277TP-64F200S BC Infineon Technologies Description: IC MICROCONTROLLER
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PEB2096HV2.1OCTAT-P PEB2096HV2.1OCTAT-P Infineon Technologies Description: IC TRANSCEIVER OCTAL
Packaging: Bulk
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PEB2096HV2.1 PEB2096HV2.1 Infineon Technologies Description: OCTAT-P OCTAL TRANSCEICER
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IPB042N10NF2SATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
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TLE7729TXUMA1 TLE7729TXUMA1 Infineon Technologies TLE7729_PB.pdf Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Grade: Automotive
Part Status: Obsolete
auf Bestellung 19745 Stücke:
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100+6.02 EUR
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TDA5340XUMA1 TDA5340XUMA1 Infineon Technologies TDA5340_Rev_1.2,_June,13,2012.pdf Description: IC RF TXRX ISM<1GHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -116dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 12mA
Current - Transmitting: 12mA
Supplier Device Package: PG-TSSOP-28
Modulation: ASK, FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
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XMC1302T028X0128ABXUMA1 XMC1302T028X0128ABXUMA1 Infineon Technologies infineon-xmc1300-ab-datasheet-en.pdf Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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FS50R17KE3B17BPSA1 FS50R17KE3B17BPSA1 Infineon Technologies Infineon-FS50R17KE3_B17-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe5fb4e30 Description: IGBT MODULE 1700V 82A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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PEF55016EV1.3-G Infineon Technologies Description: GEMINAX-D16 PRO E V2.1 16 CHANNE
Packaging: Bulk
auf Bestellung 3960 Stücke:
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DF23MR12W1M1B11BOMA1 DF23MR12W1M1B11BOMA1 Infineon Technologies DF23MR12W1M1_B11.pdf Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
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FF900R12IE4VPBOSA1 Infineon Technologies Infineon-FF900R12IE4VP-DS-v03_00-EN.pdf Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
auf Bestellung 117 Stücke:
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FF900R12ME7WB11BPSA1 FF900R12ME7WB11BPSA1 Infineon Technologies Infineon-FF900R12ME7W_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018166f2f56b3b9f Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
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IR3565BMFS08TRP Infineon Technologies Description: IC DC/DC MULTIPHASE CTLR
Packaging: Bulk
auf Bestellung 58250 Stücke:
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CY7C1049G30-10VXI CY7C1049G30-10VXI Infineon Technologies Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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2+14.71 EUR
19+12.63 EUR
38+12.17 EUR
57+11.92 EUR
114+11.5 EUR
266+11.01 EUR
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IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 Infineon Technologies Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051 Description: DIODE SIC 650V 29A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
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IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 Infineon Technologies Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051 Description: DIODE SIC 650V 29A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
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100+4.09 EUR
500+3.4 EUR
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IDDD16G65C6XTMA1 IDDD16G65C6XTMA1 Infineon Technologies Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
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IDDD16G65C6XTMA1 IDDD16G65C6XTMA1 Infineon Technologies Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
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2+14.96 EUR
10+10.12 EUR
50+8.04 EUR
100+7.38 EUR
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PTF180101M V1 PTF180101M V1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF MOSFET LDMOS 28V RFP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Discontinued at Digi-Key
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
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PTF210101M V1 PTF210101M V1 Infineon Technologies PTF210101M.pdf Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 10W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Produkt ist nicht verfügbar
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BSB280N15NZ3G Infineon Technologies INFNS17442-1.pdf?t.download=true&u=5oefqw Description: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
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PXB4330EV2.1 Infineon Technologies PXB4330-V2.1.pdf?t.download=true&u=ovmfp3 Description: AOP ATM OAM PROCESSOR
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PXB4330EV1.1 Infineon Technologies Description: AOP ATM OAM PROCESSOR
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TD215N22KOFTIMHPSA1 TD215N22KOFTIMHPSA1 Infineon Technologies infineon-tt215n-datasheet-de.pdf Description: SCR MODULE 2.2KV 410A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.2 kV
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DD390N22STIMHPSA1 DD390N22STIMHPSA1 Infineon Technologies Infineon-DD390N22S-DataSheet-v03_02-EN.pdf?fileId=5546d462636cc8fb01639104e0583fd3 Description: DIODE MOD GP 2200V 390A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 390A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
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BSM200GB120DLCE3256HOSA1 Infineon Technologies Description: BSM200GB120DLC - IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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BA892-02V BA892-02V Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: SILICON RF SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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IRL40S212ARMA1 IRL40S212ARMA1 Infineon Technologies IRL40S212ARMA1.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
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800+2.55 EUR
2400+2.28 EUR
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SLE 66R35 MCC2 SLE 66R35 MCC2 Infineon Technologies SLE66R35.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SP4001511XTMA1 SP4001511XTMA1 Infineon Technologies Infineon-SP400-15-11-DataSheet-v01_01-EN.pdf?fileId=5546d4627255dbad01725cf7d6bc6f73 Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1800+11.07 EUR
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ESD3V3S1B-02LSE6327XTSA1 INFNS19168-1.pdf?t.download=true&u=5oefqw
ESD3V3S1B-02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
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V23809C8C10
Hersteller: Infineon Technologies
Description: FAST ETHERNET TRANSCEICER
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V23809-C8-C10
Hersteller: Infineon Technologies
Description: FAST ETHERNET TRANSCEICER
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SIDC07D60F6X1SA3 SIDC07D60F6_ed2.1_9-3-10.pdf
Hersteller: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
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TLE9250VSJXUMA1 Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972
TLE9250VSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.46 EUR
5000+1.43 EUR
7500+1.42 EUR
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TLE9250VSJXUMA1 Infineon-TLE9250V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14af99f65972
TLE9250VSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 10303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
10+2.14 EUR
25+1.95 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.51 EUR
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IRFR2307ZTRLPBF irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074
IRFR2307ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.25 EUR
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IPT044N15N5ATMA1 infineon-ipt044n15n5-datasheet-en.pdf
IPT044N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+4.97 EUR
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IPT044N15N5ATMA1 infineon-ipt044n15n5-datasheet-en.pdf
IPT044N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.2 EUR
10+8.89 EUR
50+7.04 EUR
100+6.45 EUR
500+6.09 EUR
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IPT054N15N5ATMA1 Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c
IPT054N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Produkt ist nicht verfügbar
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IPT054N15N5ATMA1 Infineon-IPT054N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb227ed66c9c
IPT054N15N5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 1136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.98 EUR
10+8.72 EUR
50+6.9 EUR
100+6.32 EUR
500+5.94 EUR
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AUXHMF7321D2 IRF7321D2PBF.pdf
AUXHMF7321D2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
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MB95F654ENPFT-G101SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F654ENPFT-G101SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F564KNPFT-G107SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F564KNPFT-G107SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 infineon-isc007n04nm6-datasheet-en.pdf
ISC007N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.87 EUR
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ISC007N04NM6ATMA1 infineon-isc007n04nm6-datasheet-en.pdf
ISC007N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
auf Bestellung 8948 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.31 EUR
10+4.11 EUR
100+2.86 EUR
500+2.32 EUR
1000+2.28 EUR
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ISC017N04NM5ATMA1 infineon-isc017n04nm5-datasheet-en.pdf
ISC017N04NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Produkt ist nicht verfügbar
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ISC017N04NM5ATMA1 infineon-isc017n04nm5-datasheet-en.pdf
ISC017N04NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
auf Bestellung 3917 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+2.03 EUR
50+1.52 EUR
100+1.36 EUR
500+1.07 EUR
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BGS1711MC222IE6433XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 94000 Stücke:
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AnzahlPrivatkunde
15000+0.039 EUR
Mindestbestellmenge: 15000 Stücke
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DF23MR12W1M1B11BOMA1244 INFN-S-A0003553949-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
auf Bestellung 24 Stücke:
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AnzahlPrivatkunde
4+174.39 EUR
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EVAL6EDL7141TRAP1SHTOBO1 Infineon-Evaluation_board_EVAL_6EDL7141_TRAP_1SH-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46279cccfdb017a0ae054e624bd&da=t
EVAL6EDL7141TRAP1SHTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+460.14 EUR
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EVALIMD700AFOC3SHTOBO1 Infineon-Evaluation_board_EVAL_IMD700A_FOC_3SH-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fdf3691800b9d
EVALIMD700AFOC3SHTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
auf Bestellung 5 Stücke:
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AnzahlPrivatkunde
1+417.94 EUR
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BGH 182M E6327 Product+and+Application+Guide.pdf?folderId=db3a30431441fb5d01146ec76de80910&fileId=db3a304329a0f6ee0129b13c338f0372
Hersteller: Infineon Technologies
Description: FILTER LC ESD SMD
Produkt ist nicht verfügbar
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TC1796256F150EXBEKDUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
TC1796256F150EXBEKDUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ACCESSORY26649NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY 26649
Produkt ist nicht verfügbar
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CY7C1645KV18-400BZXI download
CY7C1645KV18-400BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI60R250CP INFNS17424-1.pdf?t.download=true&u=5oefqw
IPI60R250CP
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
176+3.21 EUR
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ILD4180 INFNS15343-1.pdf?t.download=true&u=5oefqw
ILD4180
Hersteller: Infineon Technologies
Description: SWITCHING REGULATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
416+1.43 EUR
Mindestbestellmenge: 416 Stücke
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LD403524VBOARDTOBO1 ILD4035.pdf
LD403524VBOARDTOBO1
Hersteller: Infineon Technologies
Description: BOARD EVAL ILD4035 24V
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.51 EUR
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TT820N16KOFHPSA1 Infineon-TT820N16KOF-DataSheet-v03_02-EN.pdf?fileId=5546d46269e1c0190169e2e4577001f3
TT820N16KOFHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 820 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+697.85 EUR
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SAK-TC277TP-64F200S BC
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
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PEB2096HV2.1OCTAT-P
PEB2096HV2.1OCTAT-P
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER OCTAL
Packaging: Bulk
Produkt ist nicht verfügbar
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PEB2096HV2.1
PEB2096HV2.1
Hersteller: Infineon Technologies
Description: OCTAT-P OCTAL TRANSCEICER
Produkt ist nicht verfügbar
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IPB042N10NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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TLE7729TXUMA1 TLE7729_PB.pdf
TLE7729TXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Grade: Automotive
Part Status: Obsolete
auf Bestellung 19745 Stücke:
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100+6.02 EUR
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TDA5340XUMA1 TDA5340_Rev_1.2,_June,13,2012.pdf
TDA5340XUMA1
Hersteller: Infineon Technologies
Description: IC RF TXRX ISM<1GHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -116dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 12mA
Current - Transmitting: 12mA
Supplier Device Package: PG-TSSOP-28
Modulation: ASK, FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
Produkt ist nicht verfügbar
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XMC1302T028X0128ABXUMA1 infineon-xmc1300-ab-datasheet-en.pdf
XMC1302T028X0128ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS50R17KE3B17BPSA1 Infineon-FS50R17KE3_B17-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe5fb4e30
FS50R17KE3B17BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 82A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Produkt ist nicht verfügbar
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PEF55016EV1.3-G
Hersteller: Infineon Technologies
Description: GEMINAX-D16 PRO E V2.1 16 CHANNE
Packaging: Bulk
auf Bestellung 3960 Stücke:
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12+44.13 EUR
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DF23MR12W1M1B11BOMA1 DF23MR12W1M1_B11.pdf
DF23MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Produkt ist nicht verfügbar
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FF900R12IE4VPBOSA1 Infineon-FF900R12IE4VP-DS-v03_00-EN.pdf
Hersteller: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
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1+1167.77 EUR
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FF900R12ME7WB11BPSA1 Infineon-FF900R12ME7W_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018166f2f56b3b9f
FF900R12ME7WB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Produkt ist nicht verfügbar
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IR3565BMFS08TRP
Hersteller: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Packaging: Bulk
auf Bestellung 58250 Stücke:
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71+7.47 EUR
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CY7C1049G30-10VXI Infineon-CY7C1049G_and_CY7C1049GE_are_high-performance_CMOS_fast_static_RAM_devices_with_embedded_ECC-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7e2c15966&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1049G30-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 455 Stücke:
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2+14.71 EUR
19+12.63 EUR
38+12.17 EUR
57+11.92 EUR
114+11.5 EUR
266+11.01 EUR
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IDDD10G65C6XTMA1 Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051
IDDD10G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 29A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Produkt ist nicht verfügbar
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IDDD10G65C6XTMA1 Infineon-IDDD10G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628ff848ec1051
IDDD10G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 29A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
auf Bestellung 1323 Stücke:
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AnzahlPrivatkunde
3+8.84 EUR
10+5.26 EUR
100+4.09 EUR
500+3.4 EUR
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IDDD16G65C6XTMA1 Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c
IDDD16G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
Produkt ist nicht verfügbar
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IDDD16G65C6XTMA1 Infineon-IDDD16G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f8711b50e0c
IDDD16G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 43A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
auf Bestellung 998 Stücke:
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2+14.96 EUR
10+10.12 EUR
50+8.04 EUR
100+7.38 EUR
500+7.04 EUR
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PTF180101M V1 fundamentals-of-power-semiconductors
PTF180101M V1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V RFP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Discontinued at Digi-Key
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Produkt ist nicht verfügbar
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PTF210101M V1 PTF210101M.pdf
PTF210101M V1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 10W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Produkt ist nicht verfügbar
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BSB280N15NZ3G INFNS17442-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Produkt ist nicht verfügbar
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PXB4330EV2.1 PXB4330-V2.1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
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PXB4330EV1.1
Hersteller: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
Produkt ist nicht verfügbar
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TD215N22KOFTIMHPSA1 infineon-tt215n-datasheet-de.pdf
TD215N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 410A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.2 kV
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DD390N22STIMHPSA1 Infineon-DD390N22S-DataSheet-v03_02-EN.pdf?fileId=5546d462636cc8fb01639104e0583fd3
DD390N22STIMHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 390A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 390A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
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1+215.22 EUR
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BSM200GB120DLCE3256HOSA1
Hersteller: Infineon Technologies
Description: BSM200GB120DLC - IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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BA892-02V INFNS15690-1.pdf?t.download=true&u=5oefqw
BA892-02V
Hersteller: Infineon Technologies
Description: SILICON RF SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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IRL40S212ARMA1 IRL40S212ARMA1.pdf
IRL40S212ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
auf Bestellung 26400 Stücke:
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800+2.55 EUR
2400+2.28 EUR
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SLE 66R35 MCC2 SLE66R35.pdf
SLE 66R35 MCC2
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Produkt ist nicht verfügbar
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SP4001511XTMA1 Infineon-SP400-15-11-DataSheet-v01_01-EN.pdf?fileId=5546d4627255dbad01725cf7d6bc6f73
SP4001511XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+11.07 EUR
Mindestbestellmenge: 1800 Stücke
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