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IAUA180N10S5N029AUMA1 IAUA180N10S5N029AUMA1 Infineon Technologies Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BB 804 SF3 E6327 BB 804 SF3 E6327 Infineon Technologies DS_448_BB804.pdf Description: DIODE VARACTR 18V DUAL PG-SOT23
Capacitance Ratio: 1.71
Voltage - Peak Reverse (Max): 18 V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
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BGSA143ML10E6327XTSA1 BGSA143ML10E6327XTSA1 Infineon Technologies Infineon-BGSA143ML10-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301671d77255a0659 Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Part Status: Active
Supplier Device Package: PG-TSLP-10-2
Topology: Reflective
Frequency Range: 6GHz
Voltage - Supply: 42V
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFLGA
Features: DC Blocked
Packaging: Cut Tape (CT)
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27+0.79 EUR
100+0.68 EUR
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500+0.6 EUR
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IPB180N06S4H1ATMA2 IPB180N06S4H1ATMA2 Infineon Technologies Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
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IAUS300N04S4N007ATMA1 IAUS300N04S4N007ATMA1 Infineon Technologies Infineon-IAUS300N04S4N007-DS-v01_00-EN.pdf?fileId=5546d462675a697201677379a4d1545c Description: MOSFET_(20V 40V) PG-HSOG-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 4V @ 275µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
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ICBFL02G ICBFL02G Infineon Technologies INFNS14321-1.pdf?t.download=true&u=5oefqw Description: FLUORESCENT BALLAST IC
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2ED2103S06FXUMA1 2ED2103S06FXUMA1 Infineon Technologies infineon-2edl05x06xx-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2ED2103S06FXUMA1 2ED2103S06FXUMA1 Infineon Technologies infineon-2edl05x06xx-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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IRFU024NPBFAKLA1 IRFU024NPBFAKLA1 Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IPP60R600E6XKSA1 IPP60R600E6XKSA1 Infineon Technologies Infineon-IPP60R600E6-DS-v02_02-EN.pdf?fileId=db3a304327b8975001281b5df3c81ad2 Description: IPP60R600 - COOLMOS N-CHANNEL PO
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TTB6C135N16LOF Infineon Technologies EUPCS02701-1.pdf?t.download=true&u=5oefqw Description: TTB6C135 - BRIDGE RECTIFIER & AC
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ICE5QR0680AGXUMA1 ICE5QR0680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES 12SOIC
Part Status: Not For New Designs
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Bulk
Power (Watts): 77 W
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BSC080N12LSGATMA1 BSC080N12LSGATMA1 Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC080N12LSGATMA1 BSC080N12LSGATMA1 Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
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BSB165N15NZ3G Infineon Technologies INFNS17233-1.pdf?t.download=true&u=5oefqw Description: BSB165N15 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-9
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
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BAL99 BAL99 Infineon Technologies INFNS10749-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT23-3 (TO-236)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BAL99E6433HTMA1 BAL99E6433HTMA1 Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE STANDARD 80V 250MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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TT700N22KOFTIMHPSA1 TT700N22KOFTIMHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: THYR / DIODE MODULE DK BG-PB60AT
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD700N22KOFTIMHPSA1 TD700N22KOFTIMHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: SCR MODULE 2.2KV 1050A MODULE
Structure: Series Connection - SCR/Diode
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
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F3L50R06W1E3B11BOMA1 F3L50R06W1E3B11BOMA1 Infineon Technologies Infineon-F3L50R06W1E3_B11-DS-v03_01-en_de.pdf?fileId=db3a30432ad629a6012af6462a1b0af8 Description: IGBT MODULE 600V 75A 175W
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EVALISO1I813TTOBO1 EVALISO1I813TTOBO1 Infineon Technologies Infineon-Evaluation_board_ISOFACE_with_ISO1I813T-AN-v01_00-EN.pdf?fileId=db3a3043324cae8c01324d382571001e Description: EVAL BOARD FOR ISO1I813T
Part Status: Active
Embedded: No
Primary Attributes: 8-Channel (Octal)
Supplied Contents: Board(s)
Utilized IC / Part: ISO1I813T
Type: Interface
Function: Digital Isolator
Packaging: Bulk
Secondary Attributes: Parallel/Serial Interface(s)
Contents: Board(s)
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IPW65R230CFD7AXKSA1 IPW65R230CFD7AXKSA1 Infineon Technologies Infineon-IPW65R230CFD7A-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7dbca96b017dc2c282746f0d Description: 650V COOLMOS CFD7A SJ POWER DEVI
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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TDA5225CXUMA1 Infineon Technologies Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f Description: TDA5225CXU - RF RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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CHL8212-02CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 28VQFN
Part Status: Obsolete
Clock Sync: No
Output Phases: 2
Serial Interfaces: I²C
Control Features: Enable
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-28-902
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 3
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TR10124595NOSA1 Infineon Technologies Description: TR101 W24595
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TR10128001NOSA1 Infineon Technologies Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
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TR10140962NOSA1 Infineon Technologies Description: POWER MODULE IGBT
Part Status: Obsolete
Packaging: Bulk
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REFICL8810LED42WPSRTOBO1 REFICL8810LED42WPSRTOBO1 Infineon Technologies Infineon-Reference_board_REF_ICL8810_LED_42W_PSR-ApplicationNotes-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a13c3601c1178 Description: EVAL BOARD FOR ICL8810
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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ICL8201 ICL8201 Infineon Technologies INFN-S-A0001299428-1.pdf?t.download=true&u=5oefqw Description: LED DRIVER, 1-SEGMENT, PDSO6
Part Status: Active
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 6V
Dimming: Yes
Supplier Device Package: PG-SOT23-6-1
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 800mA
Applications: Lighting
Operating Temperature: -25°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Frequency: 40kHz ~ 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
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ICL8105XUMA2 ICL8105XUMA2 Infineon Technologies ICL8105.pdf Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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BGA9H1BN6327XTSA1 BGA9H1BN6327XTSA1 Infineon Technologies Infineon-BGA9H1BN6-DataSheet-v02_01-EN.pdf Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
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BGA9H1BN6327XTSA1 BGA9H1BN6327XTSA1 Infineon Technologies Infineon-BGA9H1BN6-DataSheet-v02_01-EN.pdf Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
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BGA9H1BN6E6327XTSA1 BGA9H1BN6E6327XTSA1 Infineon Technologies Infineon-BGA9H1BN6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ceabfc63e0e28 Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 1.1dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
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XC164CR16F20FBBKXUMA1 Infineon Technologies Description: IC MCU
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STT3300N16P76XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
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FS770R08A6P2BBPSA1 FS770R08A6P2BBPSA1 Infineon Technologies Infineon-FS770R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4627956d53f01797ae093b258ac Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
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BGS15MA12E6327XTSA1 BGS15MA12E6327XTSA1 Infineon Technologies BGS15MA12.pdf Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Part Status: Obsolete
Supplier Device Package: ATSLP-12-4
Isolation: 25dB
Test Frequency: 2.5GHz
P1dB: 30dBm
Frequency Range: 100MHz ~ 2.9GHz
Insertion Loss: 0.45dB
Voltage - Supply: 2.2V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
RF Type: WCDMA
Circuit: SP5T
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 12-UFQFN Exposed Pad
Packaging: Bulk
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FP10R12W1T7BOMA1 FP10R12W1T7BOMA1 Infineon Technologies Infineon-FP10R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d462712ef9b7017135558a8f7dac Description: IGBT MODULE 1200V 10A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
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FP10R12W1T7PB11BPSA1 FP10R12W1T7PB11BPSA1 Infineon Technologies Infineon-FP10R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742696a373699a Description: LOW POWER EASY AG-EASY1B-2
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
Current - Collector Cutoff (Max): 4.5 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IFX2931GV50 IFX2931GV50 Infineon Technologies INFNS16937-1.pdf?t.download=true&u=5oefqw Description: IFX2931 - LINEAR VOLTAGE REGULAT
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IFX2931GV50XUMA2 IFX2931GV50XUMA2 Infineon Technologies IFX2931.pdf Description: IC REG LINEAR 5V 100MA DSO8
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IFX2931GV50XUMA2 IFX2931GV50XUMA2 Infineon Technologies IFX2931.pdf Description: IC REG LINEAR 5V 100MA DSO8
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BGR405H6327XTSA1 BGR405H6327XTSA1 Infineon Technologies BGR405.pdf Description: RF TRANS NPN 5V PG-SOT-343 3D
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 12mA
Power - Max: 50mW
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SAK-XC2766X-96F66LAC SAK-XC2766X-96F66LAC Infineon Technologies INFNS14437-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
Supplier Device Package: PG-LQFP-100-3
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8, 16x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 51K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 75
Part Status: Active
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XMC4400F100K256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf Description: XMC4400 - 32-BIT INDUSTRIAL MIC
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FZ1600R12HP4HOSA2 FZ1600R12HP4HOSA2 Infineon Technologies Infineon-FZ1600R12HP4-DS-v02_03-en_de.pdf?fileId=db3a3043392f529e013942aa89174cd4 Description: IGBT MOD 1200V 2400A 9400W MOD
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 9400 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 2400 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.6kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IMM101T056MXUMA1 IMM101T056MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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BCR191WE6327 BCR191WE6327 Infineon Technologies INFNS11718-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR196WE6327 BCR196WE6327 Infineon Technologies INFNS11619-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Resistors Included: R1 and R2
Current - Collector Cutoff (Max): 100nA (ICBO)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BCR191WH6327 BCR191WH6327 Infineon Technologies INFNS17190-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BCR191 BCR191 Infineon Technologies INFNS17190-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BCR196TE6327 BCR196TE6327 Infineon Technologies INFNS18608-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
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196WH6327 Infineon Technologies INFNS11619-1.pdf?t.download=true&u=5oefqw Description: BCR196 - DIGITAL TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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FS55MR12W1M1HB11NPSA1 FS55MR12W1M1HB11NPSA1 Infineon Technologies Infineon-FS55MR12W1M1H_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd0180f14a27215425 Description: MOSFET 6N-CH 1200V 15A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 6mA
Supplier Device Package: AG-EASY1B
Part Status: Active
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BSM25GB120DN2 Infineon Technologies EUPCS02843-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 800 µA
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BSM25GP120BPSA1 Infineon Technologies Description: IGBT MODULE 1200V 45A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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BSM25GP120BOSA1 Infineon Technologies Description: IGBT MOD 1200V 45A 230W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 20 A
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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BSM25GP120B2BPSA1 Infineon Technologies Description: IGBT LP ECONO AG-ECONO2A-211
Packaging: Tray
Produkt ist nicht verfügbar
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IRFB5615PBFXKMA1 IRFB5615PBFXKMA1 Infineon Technologies infineon-irf7495-datasheet-en.pdf?fileId=5546d462533600a40153561674e71e48 Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IR1175 IR1175 Infineon Technologies ir1175.pdf Description: IC GATE DRVR LOW-SIDE 20DIP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 20-PDIP
Input Type: Non-Inverting
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
IAUA180N10S5N029AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BB 804 SF3 E6327 DS_448_BB804.pdf
BB 804 SF3 E6327
Hersteller: Infineon Technologies
Description: DIODE VARACTR 18V DUAL PG-SOT23
Capacitance Ratio: 1.71
Voltage - Peak Reverse (Max): 18 V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: 1 Pair Common Cathode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Capacitance Ratio Condition: C2/C8
Q @ Vr, F: 200 @ 2V, 100MHz
Produkt ist nicht verfügbar
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BGSA143ML10E6327XTSA1 Infineon-BGSA143ML10-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301671d77255a0659
BGSA143ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Part Status: Active
Supplier Device Package: PG-TSLP-10-2
Topology: Reflective
Frequency Range: 6GHz
Voltage - Supply: 42V
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFLGA
Features: DC Blocked
Packaging: Cut Tape (CT)
auf Bestellung 7063 Stücke:
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AnzahlPrivatkunde
17+1.3 EUR
24+0.89 EUR
27+0.79 EUR
100+0.68 EUR
250+0.62 EUR
500+0.6 EUR
1000+0.56 EUR
2500+0.54 EUR
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
IPB180N06S4H1ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
1000+3.43 EUR
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IAUS300N04S4N007ATMA1 Infineon-IAUS300N04S4N007-DS-v01_00-EN.pdf?fileId=5546d462675a697201677379a4d1545c
IAUS300N04S4N007ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOG-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 4V @ 275µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICBFL02G INFNS14321-1.pdf?t.download=true&u=5oefqw
ICBFL02G
Hersteller: Infineon Technologies
Description: FLUORESCENT BALLAST IC
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AnzahlPrivatkunde
182+3.22 EUR
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2ED2103S06FXUMA1 infineon-2edl05x06xx-datasheet-en.pdf
2ED2103S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2500+1.19 EUR
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2ED2103S06FXUMA1 infineon-2edl05x06xx-datasheet-en.pdf
2ED2103S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 290mA, 700mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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AnzahlPrivatkunde
9+2.43 EUR
12+1.77 EUR
25+1.61 EUR
100+1.42 EUR
250+1.33 EUR
500+1.29 EUR
1000+1.26 EUR
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
IRFU024NPBFAKLA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IPP60R600E6XKSA1 Infineon-IPP60R600E6-DS-v02_02-EN.pdf?fileId=db3a304327b8975001281b5df3c81ad2
IPP60R600E6XKSA1
Hersteller: Infineon Technologies
Description: IPP60R600 - COOLMOS N-CHANNEL PO
Produkt ist nicht verfügbar
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TTB6C135N16LOF EUPCS02701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TTB6C135 - BRIDGE RECTIFIER & AC
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2+412.42 EUR
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ICE5QR0680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC CTLR QUASI-RES 12SOIC
Part Status: Not For New Designs
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Bulk
Power (Watts): 77 W
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205+2.93 EUR
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BSC080N12LSGATMA1 Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a
BSC080N12LSGATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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5000+2.32 EUR
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BSC080N12LSGATMA1 Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a
BSC080N12LSGATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
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BSB165N15NZ3G INFNS17233-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSB165N15 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-9
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
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156+3.67 EUR
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BAL99 INFNS10749-1.pdf?t.download=true&u=5oefqw
BAL99
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT23-3 (TO-236)
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 66000 Stücke:
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8959+0.063 EUR
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BAL99E6433HTMA1 bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6
BAL99E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 36786 Stücke:
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6772+0.071 EUR
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TT700N22KOFTIMHPSA1 Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TT700N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB60AT
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
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1+1068.29 EUR
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TD700N22KOFTIMHPSA1 Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TD700N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 1050A MODULE
Structure: Series Connection - SCR/Diode
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 700 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
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F3L50R06W1E3B11BOMA1 Infineon-F3L50R06W1E3_B11-DS-v03_01-en_de.pdf?fileId=db3a30432ad629a6012af6462a1b0af8
F3L50R06W1E3B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 75A 175W
Produkt ist nicht verfügbar
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EVALISO1I813TTOBO1 Infineon-Evaluation_board_ISOFACE_with_ISO1I813T-AN-v01_00-EN.pdf?fileId=db3a3043324cae8c01324d382571001e
EVALISO1I813TTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISO1I813T
Part Status: Active
Embedded: No
Primary Attributes: 8-Channel (Octal)
Supplied Contents: Board(s)
Utilized IC / Part: ISO1I813T
Type: Interface
Function: Digital Isolator
Packaging: Bulk
Secondary Attributes: Parallel/Serial Interface(s)
Contents: Board(s)
auf Bestellung 1 Stücke:
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1+253.78 EUR
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IPW65R230CFD7AXKSA1 Infineon-IPW65R230CFD7A-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7dbca96b017dc2c282746f0d
IPW65R230CFD7AXKSA1
Hersteller: Infineon Technologies
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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TDA5225CXUMA1 Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f
Hersteller: Infineon Technologies
Description: TDA5225CXU - RF RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
178+3.09 EUR
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CHL8212-02CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
Hersteller: Infineon Technologies
Description: IC REG BUCK 28VQFN
Part Status: Obsolete
Clock Sync: No
Output Phases: 2
Serial Interfaces: I²C
Control Features: Enable
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-28-902
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 1.2MHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 85°C
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 28-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Outputs: 3
Produkt ist nicht verfügbar
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TR10124595NOSA1
Hersteller: Infineon Technologies
Description: TR101 W24595
Produkt ist nicht verfügbar
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TR10128001NOSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TR10140962NOSA1
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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REFICL8810LED42WPSRTOBO1 Infineon-Reference_board_REF_ICL8810_LED_42W_PSR-ApplicationNotes-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a13c3601c1178
REFICL8810LED42WPSRTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL8810
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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ICL8201 INFN-S-A0001299428-1.pdf?t.download=true&u=5oefqw
ICL8201
Hersteller: Infineon Technologies
Description: LED DRIVER, 1-SEGMENT, PDSO6
Part Status: Active
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 6V
Dimming: Yes
Supplier Device Package: PG-SOT23-6-1
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 800mA
Applications: Lighting
Operating Temperature: -25°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Frequency: 40kHz ~ 150kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
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ICL8105XUMA2 ICL8105.pdf
ICL8105XUMA2
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Produkt ist nicht verfügbar
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BGA9H1BN6327XTSA1 Infineon-BGA9H1BN6-DataSheet-v02_01-EN.pdf
BGA9H1BN6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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BGA9H1BN6327XTSA1 Infineon-BGA9H1BN6-DataSheet-v02_01-EN.pdf
BGA9H1BN6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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BGA9H1BN6E6327XTSA1 Infineon-BGA9H1BN6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ceabfc63e0e28
BGA9H1BN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 1.1dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
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12000+0.56 EUR
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XC164CR16F20FBBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU
Produkt ist nicht verfügbar
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STT3300N16P76XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Produkt ist nicht verfügbar
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FS770R08A6P2BBPSA1 Infineon-FS770R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4627956d53f01797ae093b258ac
FS770R08A6P2BBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
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BGS15MA12E6327XTSA1 BGS15MA12.pdf
BGS15MA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Part Status: Obsolete
Supplier Device Package: ATSLP-12-4
Isolation: 25dB
Test Frequency: 2.5GHz
P1dB: 30dBm
Frequency Range: 100MHz ~ 2.9GHz
Insertion Loss: 0.45dB
Voltage - Supply: 2.2V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
RF Type: WCDMA
Circuit: SP5T
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 12-UFQFN Exposed Pad
Packaging: Bulk
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787+0.74 EUR
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FP10R12W1T7BOMA1 Infineon-FP10R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d462712ef9b7017135558a8f7dac
FP10R12W1T7BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 10A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
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FP10R12W1T7PB11BPSA1 Infineon-FP10R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742696a373699a
FP10R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
Current - Collector Cutoff (Max): 4.5 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY1B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+101.53 EUR
10+76.81 EUR
30+72.59 EUR
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IFX2931GV50 INFNS16937-1.pdf?t.download=true&u=5oefqw
IFX2931GV50
Hersteller: Infineon Technologies
Description: IFX2931 - LINEAR VOLTAGE REGULAT
Produkt ist nicht verfügbar
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IFX2931GV50XUMA2 IFX2931.pdf
IFX2931GV50XUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
Produkt ist nicht verfügbar
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IFX2931GV50XUMA2 IFX2931.pdf
IFX2931GV50XUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
Produkt ist nicht verfügbar
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BGR405H6327XTSA1 BGR405.pdf
BGR405H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V PG-SOT-343 3D
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 12mA
Power - Max: 50mW
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AnzahlPrivatkunde
956+0.56 EUR
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SAK-XC2766X-96F66LAC INFNS14437-1.pdf?t.download=true&u=5oefqw
SAK-XC2766X-96F66LAC
Hersteller: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Supplier Device Package: PG-LQFP-100-3
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8, 16x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 51K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 75
Part Status: Active
Produkt ist nicht verfügbar
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XMC4400F100K256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf
Hersteller: Infineon Technologies
Description: XMC4400 - 32-BIT INDUSTRIAL MIC
Produkt ist nicht verfügbar
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FZ1600R12HP4HOSA2 Infineon-FZ1600R12HP4-DS-v02_03-en_de.pdf?fileId=db3a3043392f529e013942aa89174cd4
FZ1600R12HP4HOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 2400A 9400W MOD
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 9400 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 2400 A
Part Status: Active
IGBT Type: Trench
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.6kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IMM101T056MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM101T056MXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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BCR191WE6327 INFNS11718-1.pdf?t.download=true&u=5oefqw
BCR191WE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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8955+0.054 EUR
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BCR196WE6327 INFNS11619-1.pdf?t.download=true&u=5oefqw
BCR196WE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Resistors Included: R1 and R2
Current - Collector Cutoff (Max): 100nA (ICBO)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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8955+0.054 EUR
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BCR191WH6327 INFNS17190-1.pdf?t.download=true&u=5oefqw
BCR191WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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9000+0.079 EUR
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BCR191 INFNS17190-1.pdf?t.download=true&u=5oefqw
BCR191
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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9000+0.079 EUR
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BCR196TE6327 INFNS18608-1.pdf?t.download=true&u=5oefqw
BCR196TE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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196WH6327 INFNS11619-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BCR196 - DIGITAL TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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FS55MR12W1M1HB11NPSA1 Infineon-FS55MR12W1M1H_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd0180f14a27215425
FS55MR12W1M1HB11NPSA1
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V 15A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 6mA
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 108 Stücke:
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1+106.27 EUR
24+74.42 EUR
72+72.51 EUR
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BSM25GB120DN2 EUPCS02843-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 800 µA
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 23 Stücke:
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9+69.35 EUR
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BSM25GP120BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 45A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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BSM25GP120BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 45A 230W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 20 A
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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BSM25GP120B2BPSA1
Hersteller: Infineon Technologies
Description: IGBT LP ECONO AG-ECONO2A-211
Packaging: Tray
Produkt ist nicht verfügbar
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IRFB5615PBFXKMA1 infineon-irf7495-datasheet-en.pdf?fileId=5546d462533600a40153561674e71e48
IRFB5615PBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IR1175 ir1175.pdf
IR1175
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 20DIP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 20-PDIP
Input Type: Non-Inverting
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 18 Stücke
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