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IR1175S IR1175S Infineon Technologies ir1175.pdf Description: IC GATE DRVR LOW-SIDE 20SSOP
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 2A
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
DigiKey Programmable: Not Verified
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 20-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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IR1175STR IR1175STR Infineon Technologies ir1175.pdf Description: IC GATE DRVR LOW-SIDE 20SSOP
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CYW20930A0KML2G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Protocol: Bluetooth v3.0
Voltage - Supply: 1.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Packaging: Tray
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CYW20930A0KML2GT Infineon Technologies CYW20930A0KML2GT_Web.pdf Description: IC RF TXRX+MCU BLE
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Protocol: Bluetooth v3.0
Voltage - Supply: 1.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Packaging: Tape & Reel (TR)
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BSP296L6327 BSP296L6327 Infineon Technologies INFNS13387-1.pdf?t.download=true&u=5oefqw Description: SMALL-SIGNAL N-CHANNEL MOSFET
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6PS04012E33G43439NOSA1 Infineon Technologies Description: MODULE IGBT
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FF401R17KF6C_B2 Infineon Technologies FF401R17KF6C_B2.pdf Description: IGBT MOD 1700V 650A 3150W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 3150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
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FP15R12KT3BPSA1 FP15R12KT3BPSA1 Infineon Technologies Infineon-FP15R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316ba4543a Description: IGBT MODULE 1200V 25A AG-ECONO2C
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 105 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS75R12KT3BPSA1 FS75R12KT3BPSA1 Infineon Technologies Infineon-FS75R12KT3-DataSheet-v02_01-EN.pdf?fileId=db3a304412b407950112b431b38f5537 Description: LOW POWER ECONO AG-ECONO2B-311
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 355 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 105 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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DDB6U134N16RRBPSA1 DDB6U134N16RRBPSA1 Infineon Technologies Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a Description: IGBT MODULE 1200V 70A AG-ECONO2B
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
Operating Temperature: 150°C (TJ)
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 500 W
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FS75R06KE3BPSA1 FS75R06KE3BPSA1 Infineon Technologies Infineon-FS75R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b432edc65a14 Description: IGBT MODULE 600V 75A AG-ECONO2B
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
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FS50R12W2T7BPSA1 FS50R12W2T7BPSA1 Infineon Technologies Infineon-FS50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0174269762c069b3 Description: LOW POWER EASY AG-EASY2B-711
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 7.9 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TDA21570AUMA1 TDA21570AUMA1 Infineon Technologies Infineon-TDA21570-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179e505726c7d7a&ack=t Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 29 V
Supplier Device Package: PG-IQFN-39
Channel Type: Synchronous
Driven Configuration: High-Side and Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Part Status: Active
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TDA21570AUMA1 TDA21570AUMA1 Infineon Technologies Infineon-TDA21570-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179e505726c7d7a&ack=t Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 29 V
Supplier Device Package: PG-IQFN-39
Channel Type: Synchronous
Driven Configuration: High-Side and Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Part Status: Active
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TDA21520AUMA1 TDA21520AUMA1 Infineon Technologies Infineon-TDA21520-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65dd4d1f6352&ack=t Description: IFX POWERSTAGE/DRIVER PG-IQFN-25
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-25-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 0.8V
Current - Peak Output (Source, Sink): 20A, 20A
Part Status: Active
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TDA21520AUMA1 TDA21520AUMA1 Infineon Technologies Infineon-TDA21520-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65dd4d1f6352&ack=t Description: IFX POWERSTAGE/DRIVER PG-IQFN-25
Packaging: Cut Tape (CT)
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-25-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 0.8V
Current - Peak Output (Source, Sink): 20A, 20A
Part Status: Active
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FF8MR12W2M1PB11BPSA1 FF8MR12W2M1PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER EASY
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FF800R17KE3NOSA1 Infineon Technologies Infineon-FF800R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4306c4850b4 Description: IGBT MODULE 1700V 4450W
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FF800R17KE3B2NOSA1 Infineon Technologies FF800R17KE3_B2_Rev2.2_2013-04-04.pdf Description: IGBT MODULE 1700V 800A
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5200 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1200 A
Supplier Device Package: A-IHV130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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SAHXC2286M104F66LAAHXUMA1 Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 110°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
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SAF-XC2285M-56F80LAA SAF-XC2285M-56F80LAA Infineon Technologies INFNS14276-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 50K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
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XC2385A56F80LAAKXUMA1 XC2385A56F80LAAKXUMA1 Infineon Technologies Infineon-SAK-XC2387A-104F80LR%20AB-DataSheet-v02_12-EN.pdf?fileId=5546d4626b2d8e69016b46e01c9833ab Description: XC2385 - 16-BIT C166 MICROCONTRO
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FS75R12KT4B15BPSA1 FS75R12KT4B15BPSA1 Infineon Technologies Infineon-FS75R12KT4_B15-DS-v03_00-EN.pdf?fileId=db3a30431a47d73d011a4964ea8d0126 Description: IGBT MOD 1200V 75A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FP50R12KT4B11BPSA1 FP50R12KT4B11BPSA1 Infineon Technologies Infineon-FP50R12KT4_B11-DS-v03_00-EN.pdf?fileId=db3a3043156fd57301161a73efc91e28 Description: IGBT MODULE 1200V 50A AG-ECONO2B
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
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FS50R12KT3BPSA1 FS50R12KT3BPSA1 Infineon Technologies Infineon-FS50R12KT3-DataSheet-v02_01-EN.pdf?fileId=db3a304412b407950112b431b2b15533 Description: LOW POWER ECONO AG-ECONO2B-311
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FF450R12ME4B11BPSA2 FF450R12ME4B11BPSA2 Infineon Technologies Infineon-FF450R12ME4_B11-DS-v02_00-EN.pdf?fileId=db3a3043353fdc16013543e3dc143207 Description: MEDIUM POWER ECONO AG-ECONOD-411
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 675 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD
NTC Thermistor: Yes
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FP25R12KT4BPSA1 FP25R12KT4BPSA1 Infineon Technologies Infineon-FP25R12KT4-DS-v03_00-en_de.pdf?fileId=db3a30431ed1d7b2011f697849180e4c Description: IGBT MODULE 1200V 25A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FP50R12KT4BPSA1 FP50R12KT4BPSA1 Infineon Technologies Infineon-FP50R12KT4-DS-v02_00-EN.pdf?fileId=db3a3043163797a601166ca05d0e0f48 Description: IGBT MODULE 1200V 50A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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SLB9670XQ12FW640XUMA1 SLB9670XQ12FW640XUMA1 Infineon Technologies SLB9670xQ1.2.pdf Description: IC SECURITY TPM I2C 32VQFN
Produkt ist nicht verfügbar
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SLE66R16PMCC8IXHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R32PMCC8IXHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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CY7C65630-56LTXAT CY7C65630-56LTXAT Infineon Technologies Description: IC USB HUB CTRLR 4PORT 56VQFN
DigiKey Programmable: Not Verified
Supplier Device Package: 56-QFN (8x8)
Standards: USB 2.0
Protocol: USB
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: -40°C ~ 85°C
Interface: USB
Function: Hub Controller
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC 857BT E6327 BC 857BT E6327 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SC75-3D
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SC75-3D
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS50R07N2E4 FS50R07N2E4 Infineon Technologies INFNS28583-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS50R06KE3 Infineon Technologies INFNS28580-1.pdf?t.download=true&u=5oefqw Description: FS50R06 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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IKA08N65F5 IKA08N65F5 Infineon Technologies INFN-S-A0001300172-1.pdf?t.download=true&u=5oefqw Description: IKA08N65 - DISCRETE IGBT WITH AN
Gate Charge: 22 nC
Test Condition: 400V, 4A, 48Ohm, 15V
Switching Energy: 70µJ (on), 20µJ (off)
Td (on/off) @ 25°C: 10ns/116ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Reverse Recovery Time (trr): 41 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 31.2 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10.8 A
Part Status: Active
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IAUA210N10S5N024AUMA1 IAUA210N10S5N024AUMA1 Infineon Technologies Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IAUA250N08S5N018AUMA1 IAUA250N08S5N018AUMA1 Infineon Technologies Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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CHL8214-07CRT CHL8214-07CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 40VQFN
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TLE72732GV33XUMA1 TLE72732GV33XUMA1 Infineon Technologies Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee Description: IC REG LIN 3.3V 180MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 180mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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EVALM5IGBT7TOBO1 EVALM5IGBT7TOBO1 Infineon Technologies Infineon-UG-2021-28_EVAL-M5-IGBT7-UserManual-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aaf427d3a2289 Description: EVAL BOARD FOR M5-IGBT7
Part Status: Active
Embedded: Yes, MCU, 32-Bit
Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: M5-IGBT7
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Secondary Attributes: On-Board LEDs, Test Points
Contents: Board(s), Cable(s)
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ILD4001 1.0A BOARD ILD4001 1.0A BOARD Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD FOR ILD4001
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 1A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
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BSM50GP60_B2 Infineon Technologies INFNS12611-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
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BSM50GP60GBOSA1 Infineon Technologies Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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BSM50GD170DLBOSA1 Infineon Technologies Description: IGBT MOD 1700V 100A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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BSM50GB60DLCHOSA1 BSM50GB60DLCHOSA1 Infineon Technologies Infineon-BSM50GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349a4260c0 Description: IGBT MODULE 600V 75A 280W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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BSM50GD60DLCBOSA1 Infineon Technologies Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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BSM50GX120DN2BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPN60R600PFD7SATMA1 IPN60R600PFD7SATMA1 Infineon Technologies Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
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IPN60R600PFD7SATMA1 IPN60R600PFD7SATMA1 Infineon Technologies Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
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500+0.84 EUR
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BTS70401EPZXUMA1 BTS70401EPZXUMA1 Infineon Technologies Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4 Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS70401EPZXUMA1 BTS70401EPZXUMA1 Infineon Technologies Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4 Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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CY7C1312KV18-250BZC CY7C1312KV18-250BZC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 1M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
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IPD90P03P404ATMA2 IPD90P03P404ATMA2 Infineon Technologies Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed Description: MOSFET P-CH 30V 90A TO252-31
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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IPD90P03P404ATMA2 IPD90P03P404ATMA2 Infineon Technologies Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed Description: MOSFET P-CH 30V 90A TO252-31
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Qualification: AEC-Q101
Grade: Automotive
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IPB80P03P405ATMA2 IPB80P03P405ATMA2 Infineon Technologies Infineon-IPx80P03P4-05-DS-v01_00-EN.pdf?fileId=db3a30431ddc9372011e07ef59f52807 Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DEMOBOARDTLE4242GTOBO1 DEMOBOARDTLE4242GTOBO1 Infineon Technologies infineon-litix-linear-tle4242g-demoboard-tle4242g-um-en.pdf Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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CY8C28433-24PVXIT CY8C28433-24PVXIT Infineon Technologies Infineon-CY8C28xxx_PSoC_Programmable_System-on-Chip-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d6853d5a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_3_79 Description: IC MCU 8BIT 16KB FLASH 28SSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BGB 420 E6327 BGB 420 E6327 Infineon Technologies BGB420.pdf Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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FZ1000R33HL3B60BOSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1.6 MW
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Last Time Buy
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IR1175S ir1175.pdf
IR1175S
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 20SSOP
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 2A
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
DigiKey Programmable: Not Verified
Channel Type: Synchronous
Rise / Fall Time (Typ): 20ns, 20ns
Supplier Device Package: 20-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IR1175STR ir1175.pdf
IR1175STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 20SSOP
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CYW20930A0KML2G download
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Protocol: Bluetooth v3.0
Voltage - Supply: 1.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Packaging: Tray
Produkt ist nicht verfügbar
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CYW20930A0KML2GT CYW20930A0KML2GT_Web.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 14
Protocol: Bluetooth v3.0
Voltage - Supply: 1.4V ~ 3.6V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP296L6327 INFNS13387-1.pdf?t.download=true&u=5oefqw
BSP296L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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6PS04012E33G43439NOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT
Produkt ist nicht verfügbar
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FF401R17KF6C_B2 FF401R17KF6C_B2.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 650A 3150W
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 3150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Produkt ist nicht verfügbar
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FP15R12KT3BPSA1 Infineon-FP15R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316ba4543a
FP15R12KT3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 25A AG-ECONO2C
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 105 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS75R12KT3BPSA1 Infineon-FS75R12KT3-DataSheet-v02_01-EN.pdf?fileId=db3a304412b407950112b431b38f5537
FS75R12KT3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 355 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 105 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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DDB6U134N16RRBPSA1 Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a
DDB6U134N16RRBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 70A AG-ECONO2B
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
Operating Temperature: 150°C (TJ)
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 500 W
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FS75R06KE3BPSA1 Infineon-FS75R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b432edc65a14
FS75R06KE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 75A AG-ECONO2B
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
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1+115.24 EUR
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FS50R12W2T7BPSA1 Infineon-FS50R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0174269762c069b3
FS50R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 7.9 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 25 Stücke:
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1+100.67 EUR
15+73.36 EUR
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TDA21570AUMA1 Infineon-TDA21570-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179e505726c7d7a&ack=t
TDA21570AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 29 V
Supplier Device Package: PG-IQFN-39
Channel Type: Synchronous
Driven Configuration: High-Side and Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Part Status: Active
Produkt ist nicht verfügbar
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TDA21570AUMA1 Infineon-TDA21570-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179e505726c7d7a&ack=t
TDA21570AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 29 V
Supplier Device Package: PG-IQFN-39
Channel Type: Synchronous
Driven Configuration: High-Side and Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Part Status: Active
Produkt ist nicht verfügbar
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TDA21520AUMA1 Infineon-TDA21520-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65dd4d1f6352&ack=t
TDA21520AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-25
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-25-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 0.8V
Current - Peak Output (Source, Sink): 20A, 20A
Part Status: Active
Produkt ist nicht verfügbar
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TDA21520AUMA1 Infineon-TDA21520-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b65dd4d1f6352&ack=t
TDA21520AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-25
Packaging: Cut Tape (CT)
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-25-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 0.8V
Current - Peak Output (Source, Sink): 20A, 20A
Part Status: Active
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FF8MR12W2M1PB11BPSA1
FF8MR12W2M1PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Produkt ist nicht verfügbar
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FF800R17KE3NOSA1 Infineon-FF800R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4306c4850b4
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4450W
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4450 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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1+1847.39 EUR
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FF800R17KE3B2NOSA1 FF800R17KE3_B2_Rev2.2_2013-04-04.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 800A
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5200 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1200 A
Supplier Device Package: A-IHV130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 48 Stücke:
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SAHXC2286M104F66LAAHXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 110°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAF-XC2285M-56F80LAA INFNS14276-1.pdf?t.download=true&u=5oefqw
SAF-XC2285M-56F80LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 50K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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XC2385A56F80LAAKXUMA1 Infineon-SAK-XC2387A-104F80LR%20AB-DataSheet-v02_12-EN.pdf?fileId=5546d4626b2d8e69016b46e01c9833ab
XC2385A56F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: XC2385 - 16-BIT C166 MICROCONTRO
auf Bestellung 102 Stücke:
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73+8.07 EUR
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FS75R12KT4B15BPSA1 Infineon-FS75R12KT4_B15-DS-v03_00-EN.pdf?fileId=db3a30431a47d73d011a4964ea8d0126
FS75R12KT4B15BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 8 Stücke:
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1+137.12 EUR
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FP50R12KT4B11BPSA1 Infineon-FP50R12KT4_B11-DS-v03_00-EN.pdf?fileId=db3a3043156fd57301161a73efc91e28
FP50R12KT4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-ECONO2B
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
auf Bestellung 34 Stücke:
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1+138.78 EUR
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FS50R12KT3BPSA1 Infineon-FS50R12KT3-DataSheet-v02_01-EN.pdf?fileId=db3a304412b407950112b431b2b15533
FS50R12KT3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 11 Stücke:
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1+116.62 EUR
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FF450R12ME4B11BPSA2 Infineon-FF450R12ME4_B11-DS-v02_00-EN.pdf?fileId=db3a3043353fdc16013543e3dc143207
FF450R12ME4B11BPSA2
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-411
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 675 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD
NTC Thermistor: Yes
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
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1+290.9 EUR
10+257.79 EUR
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FP25R12KT4BPSA1 Infineon-FP25R12KT4-DS-v03_00-en_de.pdf?fileId=db3a30431ed1d7b2011f697849180e4c
FP25R12KT4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 25A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 15 Stücke:
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1+113.64 EUR
15+85.31 EUR
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FP50R12KT4BPSA1 Infineon-FP50R12KT4-DS-v02_00-EN.pdf?fileId=db3a3043163797a601166ca05d0e0f48
FP50R12KT4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+142.09 EUR
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SLB9670XQ12FW640XUMA1 SLB9670xQ1.2.pdf
SLB9670XQ12FW640XUMA1
Hersteller: Infineon Technologies
Description: IC SECURITY TPM I2C 32VQFN
Produkt ist nicht verfügbar
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SLE66R16PMCC8IXHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SLE66R32PMCC8IXHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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CY7C65630-56LTXAT
CY7C65630-56LTXAT
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 4PORT 56VQFN
DigiKey Programmable: Not Verified
Supplier Device Package: 56-QFN (8x8)
Standards: USB 2.0
Protocol: USB
Voltage - Supply: 3.15V ~ 3.45V
Operating Temperature: -40°C ~ 85°C
Interface: USB
Function: Hub Controller
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BC 857BT E6327 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC 857BT E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SC75-3D
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SC75-3D
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS50R07N2E4 INFNS28583-1.pdf?t.download=true&u=5oefqw
FS50R07N2E4
Hersteller: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 858 Stücke:
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AnzahlPrivatkunde
6+101.58 EUR
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FS50R06KE3 INFNS28580-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS50R06 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1332 Stücke:
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6+107.47 EUR
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IKA08N65F5 INFN-S-A0001300172-1.pdf?t.download=true&u=5oefqw
IKA08N65F5
Hersteller: Infineon Technologies
Description: IKA08N65 - DISCRETE IGBT WITH AN
Gate Charge: 22 nC
Test Condition: 400V, 4A, 48Ohm, 15V
Switching Energy: 70µJ (on), 20µJ (off)
Td (on/off) @ 25°C: 10ns/116ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Reverse Recovery Time (trr): 41 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 31.2 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10.8 A
Part Status: Active
Produkt ist nicht verfügbar
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IAUA210N10S5N024AUMA1 Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b
IAUA210N10S5N024AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.89 EUR
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IAUA250N08S5N018AUMA1 Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41
IAUA250N08S5N018AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CHL8214-07CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
CHL8214-07CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
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TLE72732GV33XUMA1 Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee
TLE72732GV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 180MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 180mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.13 EUR
10+3.83 EUR
25+3.5 EUR
100+3.14 EUR
250+2.98 EUR
500+2.92 EUR
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EVALM5IGBT7TOBO1 Infineon-UG-2021-28_EVAL-M5-IGBT7-UserManual-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aaf427d3a2289
EVALM5IGBT7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR M5-IGBT7
Part Status: Active
Embedded: Yes, MCU, 32-Bit
Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: M5-IGBT7
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Secondary Attributes: On-Board LEDs, Test Points
Contents: Board(s), Cable(s)
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1+1519.15 EUR
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ILD4001 1.0A BOARD fundamentals-of-power-semiconductors
ILD4001 1.0A BOARD
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ILD4001
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 1A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
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1+35.52 EUR
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BSM50GP60_B2 INFNS12611-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
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6+115.07 EUR
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BSM50GP60GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GD170DLBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GB60DLCHOSA1 Infineon-BSM50GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349a4260c0
BSM50GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 75A 280W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GD60DLCBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Produkt ist nicht verfügbar
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BSM50GX120DN2BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPN60R600PFD7SATMA1 Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec
IPN60R600PFD7SATMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.68 EUR
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IPN60R600PFD7SATMA1 Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec
IPN60R600PFD7SATMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.62 EUR
13+1.64 EUR
100+1.09 EUR
500+0.84 EUR
1000+0.77 EUR
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BTS70401EPZXUMA1 Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4
BTS70401EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BTS70401EPZXUMA1 Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4
BTS70401EPZXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
13+1.7 EUR
25+1.55 EUR
100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.21 EUR
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CY7C1312KV18-250BZC download
CY7C1312KV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 1M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
auf Bestellung 336 Stücke:
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AnzahlPrivatkunde
11+55.58 EUR
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IPD90P03P404ATMA2 Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed
IPD90P03P404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.57 EUR
7500+1.44 EUR
Mindestbestellmenge: 2500 Stücke
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IPD90P03P404ATMA2 Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed
IPD90P03P404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 10016 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.24 EUR
10+3.38 EUR
50+2.58 EUR
100+2.32 EUR
500+1.87 EUR
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IPB80P03P405ATMA2 Infineon-IPx80P03P4-05-DS-v01_00-EN.pdf?fileId=db3a30431ddc9372011e07ef59f52807
IPB80P03P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DEMOBOARDTLE4242GTOBO1 infineon-litix-linear-tle4242g-demoboard-tle4242g-um-en.pdf
DEMOBOARDTLE4242GTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+96.64 EUR
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CY8C28433-24PVXIT Infineon-CY8C28xxx_PSoC_Programmable_System-on-Chip-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d6853d5a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_3_79
CY8C28433-24PVXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BGB 420 E6327 BGB420.pdf
BGB 420 E6327
Hersteller: Infineon Technologies
Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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FZ1000R33HL3B60BOSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1.6 MW
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Last Time Buy
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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