Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148733) > Seite 453 nach 2479

Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 448 449 450 451 452 453 454 455 456 457 458 494 741 988 1235 1482 1729 1976 2223 2470 2479  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2EDN7424RXTMA1 2EDN7424RXTMA1 Infineon Technologies Infineon-2EDN7424R-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e5812b13f6b Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7524RXTMA1 2EDN7524RXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.61 EUR
10000+0.60 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
2EDN8524RXTMA1 2EDN8524RXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7523RXTMA1 2EDN7523RXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB2U50N08W1RB23BOMA2 Infineon Technologies DDB2U50N08W1R_B23_Rev3.0.pdf Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUXDIFZ44ESTRL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS52N15DHR Infineon Technologies Description: IRFS52N15DHR
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BS0615N Infineon Technologies Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD800S33K2CNOSA1 DD800S33K2CNOSA1 Infineon Technologies Infineon-DD800S33K2C-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d06e5a4557ef4 Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD400S33K2CNOSA1 DD400S33K2CNOSA1 Infineon Technologies Infineon-DD400S33K2C-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430e682524f Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD400S33K2CB3NDSA1 Infineon Technologies DD400S33K2C_rev3.2_11-25-13.pdf Description: MODULE DIODE HV130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD800S33K2CB3S2NDSA1 Infineon Technologies DD800S33K2C_v3.0_6-17-16.pdf Description: DIODE MOD GP 3300V 800A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP200R12N3T7BPSA1 FP200R12N3T7BPSA1 Infineon Technologies Infineon-FP200R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ad005d8710e Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+254.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP35R12W2T7BPSA1 FP35R12W2T7BPSA1 Infineon Technologies Infineon-FP35R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742693a9e565e2 Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.8 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+100.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DDB2U20N12W1RFB11BPSA1 DDB2U20N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U20N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f0179794dde9f5179 Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+121.00 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP15R12W1T7B3BOMA1 FP15R12W1T7B3BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP15R12W1T7B11BOMA1 FP15R12W1T7B11BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d462700c0ae6017057c6ba956751 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF200R07W2H3B77BPSA1 DF200R07W2H3B77BPSA1 Infineon Technologies Infineon-DF200R07W2H3_B77-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1b7966c40982 Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 21 µA
Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+94.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S2GO_CUR-SENSE_TLI4971 Infineon Technologies Infineon-TLI4971_S2Go_Arduino_Quick_Start-GettingStarted-v01_00-EN.pdf?fileId=5546d46270c4f93e0170f36156157dfc Description: SENSOR BOARD
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971 MS2GO Infineon Technologies Infineon-TLI4971-ProductBrief-v01_02-EN.pdf?fileId=5546d46272e49d2a017352fd97da5dc4 Description: XENSIV MAG CUR SENSOR
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5E0001XUMA1 TLI4971A075T5E0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5E0001XUMA1 TLI4971A075T5E0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
auf Bestellung 4131 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.79 EUR
5+6.10 EUR
10+5.83 EUR
25+5.52 EUR
50+5.30 EUR
100+5.11 EUR
500+4.71 EUR
1000+4.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A025T5E0001XUMA1 TLI4971A025T5E0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
5+5.70 EUR
10+5.45 EUR
25+5.16 EUR
50+4.95 EUR
100+4.77 EUR
500+4.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5UE0001XUMA1 TLI4971A075T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5UE0001XUMA1 TLI4971A075T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2069 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.36 EUR
5+6.42 EUR
10+6.08 EUR
25+5.69 EUR
50+5.43 EUR
100+5.19 EUR
500+4.74 EUR
1000+4.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FF225R12ME3BOSA1 Infineon Technologies Description: IGBT MOD 1200V 325A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 325 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DEMODISTANCE2GOLTOBO1 DEMODISTANCE2GOLTOBO1 Infineon Technologies Infineon-BGT24LTR11N16-DS-v01_03-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a Description: EVAL BOARD FOR BGT24LTR11N16
Packaging: Bulk
For Use With/Related Products: BGT24LTR11N16
Frequency: 24GHz
Type: Transceiver
Contents: Board(s)
Utilized IC / Part: BGT24LTR11N16
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+340.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF6716MTRPBF IRF6716MTRPBF Infineon Technologies IRSDS10736-1.pdf?t.download=true&u=5oefqw Description: IRF6716 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
auf Bestellung 56952 Stücke:
Lieferzeit 10-14 Tag (e)
205+2.59 EUR
Mindestbestellmenge: 205
Im Einkaufswagen  Stück im Wert von  UAH
BFP640FESDH6327XTSA1 BFP640FESDH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI072N10N3G IPI072N10N3G Infineon Technologies INFNS16324-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
313+1.69 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5866LTI-LP022 CY8C5866LTI-LP022 Infineon Technologies Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
25+25.41 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5248LTI-030 CY8C5248LTI-030 Infineon Technologies CY8C52.pdf Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
28+19.54 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
auf Bestellung 7372 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+2.73 EUR
100+2.37 EUR
500+2.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPI147N12N3GAKSA1 IPI147N12N3GAKSA1 Infineon Technologies IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01 Description: MOSFET N-CH 120V 56A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
307+1.64 EUR
Mindestbestellmenge: 307
Im Einkaufswagen  Stück im Wert von  UAH
TLE6228GPNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6228GPAUMA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD70P04P409ATMA2 IPD70P04P409ATMA2 Infineon Technologies Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.89 EUR
5000+0.83 EUR
7500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD70P04P409ATMA2 IPD70P04P409ATMA2 Infineon Technologies Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8283 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
10+1.87 EUR
100+1.36 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPB180P04P403ATMA2 IPB180P04P403ATMA2 Infineon Technologies Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.03 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB180P04P403ATMA2 IPB180P04P403ATMA2 Infineon Technologies Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
10+5.44 EUR
100+4.40 EUR
500+3.91 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4146LQI-S423 CY8C4146LQI-S423 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 4272 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.93 EUR
10+3.73 EUR
25+3.42 EUR
80+3.13 EUR
230+3.05 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R460CEATMA1 IPD60R460CEATMA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: MOSFET N-CH 600V 9.1A TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N04NM5ATMA1 ISC019N04NM5ATMA1 Infineon Technologies Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.75 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N04NM5ATMA1 ISC019N04NM5ATMA1 Infineon Technologies Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 10568 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.80 EUR
10+1.84 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
2000+0.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U145N16LHOSA1 DDB6U145N16LHOSA1 Infineon Technologies Infineon-DDB6U145N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314b2f53ff Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C20466A-24LQXI CY8C20466A-24LQXI Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE PSOC 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CY8C3445LTI-079 CY8C3445LTI-079 Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
42+13.45 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRS2890DSPBF IRS2890DSPBF Infineon Technologies Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
auf Bestellung 5460 Stücke:
Lieferzeit 10-14 Tag (e)
233+2.09 EUR
Mindestbestellmenge: 233
Im Einkaufswagen  Stück im Wert von  UAH
ACCESSORY21392NOSA1 Infineon Technologies Description: ACCESSORY 21392NOSA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW40N65DH5XKSA1 IKFW40N65DH5XKSA1 Infineon Technologies Infineon-IKFW40N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972f3891f03 Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.65 EUR
30+6.07 EUR
120+5.06 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.76 EUR
5000+0.73 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SPD03N60C3ATMA1 SPD03N60C3ATMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 17226 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
13+1.46 EUR
100+1.13 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R057M1HXKSA1 IMZA65R057M1HXKSA1 Infineon Technologies Infineon-IMZA65R057M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c74563c6b Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE050N08NM5ATMA1 IQE050N08NM5ATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE050N08NM5ATMA1 IQE050N08NM5ATMA1 Infineon Technologies Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1 Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 9048 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.84 EUR
10+3.33 EUR
100+2.42 EUR
500+2.02 EUR
1000+1.99 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IQE065N10NM5ATMA1 IQE065N10NM5ATMA1 Infineon Technologies Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.71 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE065N10NM5ATMA1 IQE065N10NM5ATMA1 Infineon Technologies Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 22345 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.30 EUR
10+3.44 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.79 EUR
2000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
ISC022N10NM6ATMA1 ISC022N10NM6ATMA1 Infineon Technologies Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91 Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC022N10NM6ATMA1 ISC022N10NM6ATMA1 Infineon Technologies Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91 Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.20 EUR
10+5.57 EUR
100+3.97 EUR
500+3.69 EUR
1000+3.64 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 Infineon Technologies Infineon-IQE008N03LM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c822c327f74 Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7424RXTMA1 Infineon-2EDN7424R-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e5812b13f6b
2EDN7424RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7524RXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7524RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.61 EUR
10000+0.60 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
2EDN8524RXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7523RXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523RXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB2U50N08W1RB23BOMA2 DDB2U50N08W1R_B23_Rev3.0.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUXDIFZ44ESTRL fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS52N15DHR
Hersteller: Infineon Technologies
Description: IRFS52N15DHR
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BS0615N
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD800S33K2CNOSA1 Infineon-DD800S33K2C-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d06e5a4557ef4
DD800S33K2CNOSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD400S33K2CNOSA1 Infineon-DD400S33K2C-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430e682524f
DD400S33K2CNOSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V AIHV130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD400S33K2CB3NDSA1 DD400S33K2C_rev3.2_11-25-13.pdf
Hersteller: Infineon Technologies
Description: MODULE DIODE HV130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
Current - Reverse Leakage @ Vr: 550 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD800S33K2CB3S2NDSA1 DD800S33K2C_v3.0_6-17-16.pdf
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V 800A AIHV130
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP200R12N3T7BPSA1 Infineon-FP200R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ad005d8710e
FP200R12N3T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+254.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP35R12W2T7BPSA1 Infineon-FP35R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01742693a9e565e2
FP35R12W2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.8 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DDB2U20N12W1RFB11BPSA1 Infineon-DDB2U20N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f0179794dde9f5179
DDB2U20N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+121.00 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP15R12W1T7B3BOMA1 Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da
FP15R12W1T7B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP15R12W1T7B11BOMA1 Infineon-FP15R12W1T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d462700c0ae6017057c6ba956751
FP15R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF200R07W2H3B77BPSA1 Infineon-DF200R07W2H3_B77-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1b7966c40982
DF200R07W2H3B77BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 21 µA
Input Capacitance (Cies) @ Vce: 2.95 nF @ 650 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+94.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S2GO_CUR-SENSE_TLI4971 Infineon-TLI4971_S2Go_Arduino_Quick_Start-GettingStarted-v01_00-EN.pdf?fileId=5546d46270c4f93e0170f36156157dfc
Hersteller: Infineon Technologies
Description: SENSOR BOARD
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971 MS2GO Infineon-TLI4971-ProductBrief-v01_02-EN.pdf?fileId=5546d46272e49d2a017352fd97da5dc4
Hersteller: Infineon Technologies
Description: XENSIV MAG CUR SENSOR
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5E0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A075T5E0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5E0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A075T5E0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
auf Bestellung 4131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.79 EUR
5+6.10 EUR
10+5.83 EUR
25+5.52 EUR
50+5.30 EUR
100+5.11 EUR
500+4.71 EUR
1000+4.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A025T5E0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A025T5E0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
5+5.70 EUR
10+5.45 EUR
25+5.16 EUR
50+4.95 EUR
100+4.77 EUR
500+4.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A075T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLI4971A075T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A075T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: SENSOR CURRENT HALL 75A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.36 EUR
5+6.42 EUR
10+6.08 EUR
25+5.69 EUR
50+5.43 EUR
100+5.19 EUR
500+4.74 EUR
1000+4.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FF225R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 325 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DEMODISTANCE2GOLTOBO1 Infineon-BGT24LTR11N16-DS-v01_03-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a
DEMODISTANCE2GOLTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT24LTR11N16
Packaging: Bulk
For Use With/Related Products: BGT24LTR11N16
Frequency: 24GHz
Type: Transceiver
Contents: Board(s)
Utilized IC / Part: BGT24LTR11N16
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+340.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF6716MTRPBF IRSDS10736-1.pdf?t.download=true&u=5oefqw
IRF6716MTRPBF
Hersteller: Infineon Technologies
Description: IRF6716 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
auf Bestellung 56952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
205+2.59 EUR
Mindestbestellmenge: 205
Im Einkaufswagen  Stück im Wert von  UAH
BFP640FESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP640FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8B ~ 30.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI072N10N3G INFNS16324-1.pdf?t.download=true&u=5oefqw
IPI072N10N3G
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
313+1.69 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5866LTI-LP022 Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
CY8C5866LTI-LP022
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+25.41 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5248LTI-030 CY8C52.pdf
CY8C5248LTI-030
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+19.54 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BSC077N12NS3GATMA1 BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
auf Bestellung 7372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.73 EUR
100+2.37 EUR
500+2.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPI147N12N3GAKSA1 IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01
IPI147N12N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 56A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
307+1.64 EUR
Mindestbestellmenge: 307
Im Einkaufswagen  Stück im Wert von  UAH
TLE6228GPNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6228GPAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD70P04P409ATMA2 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
IPD70P04P409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.89 EUR
5000+0.83 EUR
7500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD70P04P409ATMA2 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
IPD70P04P409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.87 EUR
100+1.36 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPB180P04P403ATMA2 Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e
IPB180P04P403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.03 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB180P04P403ATMA2 Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e
IPB180P04P403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
10+5.44 EUR
100+4.40 EUR
500+3.91 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4146LQI-S423 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146LQI-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 4272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.73 EUR
25+3.42 EUR
80+3.13 EUR
230+3.05 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R460CEATMA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPD60R460CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
ISC019N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.75 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
ISC019N04NM5ATMA1
Hersteller: Infineon Technologies
Description: 40V 1.9M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 10568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.80 EUR
10+1.84 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
2000+0.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U145N16LHOSA1 Infineon-DDB6U145N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314b2f53ff
DDB6U145N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C20466A-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20466A-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CY8C3445LTI-079 download
CY8C3445LTI-079
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+13.45 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRS2890DSPBF Infineon-IRS2890DS-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad6fbc8a4bf4
IRS2890DSPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
DigiKey Programmable: Not Verified
auf Bestellung 5460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
233+2.09 EUR
Mindestbestellmenge: 233
Im Einkaufswagen  Stück im Wert von  UAH
ACCESSORY21392NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY 21392NOSA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW40N65DH5XKSA1 Infineon-IKFW40N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972f3891f03
IKFW40N65DH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.65 EUR
30+6.07 EUR
120+5.06 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.76 EUR
5000+0.73 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 17226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
13+1.46 EUR
100+1.13 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R057M1HXKSA1 Infineon-IMZA65R057M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c74563c6b
IMZA65R057M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE050N08NM5ATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE050N08NM5ATMA1 Infineon-IQE050N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c921b620bf1
IQE050N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 9048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.33 EUR
100+2.42 EUR
500+2.02 EUR
1000+1.99 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IQE065N10NM5ATMA1 Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae
IQE065N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.71 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQE065N10NM5ATMA1 Infineon-IQE065N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c9c33bb0dae
IQE065N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 22345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.30 EUR
10+3.44 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.79 EUR
2000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
ISC022N10NM6ATMA1 Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91
ISC022N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC022N10NM6ATMA1 Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91
ISC022N10NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 254W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.20 EUR
10+5.57 EUR
100+3.97 EUR
500+3.69 EUR
1000+3.64 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQE008N03LM5ATMA1 Infineon-IQE008N03LM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c822c327f74
IQE008N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 448 449 450 451 452 453 454 455 456 457 458 494 741 988 1235 1482 1729 1976 2223 2470 2479  [ Nächste Seite >> ]