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SAK-TC1784F320F180ELBAKXUMA1 Infineon Technologies TC1784_DS_v111.pdf?fileId=db3a304336ca04c90136ca92f1cd00a6 Description: RISC FLASH MICROCONTROLLER, 32 B
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TC297TX128F300NBCKXUMA2 TC297TX128F300NBCKXUMA2 Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Number of I/O: 263
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 768K x 8
Program Memory Type: FLASH
RAM Size: 2.7M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
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TC297TX128F300NBCKXUMA2 TC297TX128F300NBCKXUMA2 Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
Number of I/O: 263
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 768K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 2.7M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
DigiKey Programmable: Not Verified
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TC277TP64F200NDCKXUMA3 TC277TP64F200NDCKXUMA3 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
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TC277TP64F200NDCKXUMA3 TC277TP64F200NDCKXUMA3 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
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TLD5190IVREGEVALTOBO1 TLD5190IVREGEVALTOBO1 Infineon Technologies Infineon-TLD5190IVREG-EVAL-UserManual-v01_00-EN.pdf?fileId=5546d46273a5366f017405cdf5150eac Description: EVAL BOARD FOR TLD5190QV
Part Status: Active
Outputs and Type: 1, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: TLD5190QV
Current - Output / Channel: 1.5A
Voltage - Input: 5.5V ~ 35V
Voltage - Output: 5.5V ~ 41.8V
Features: Dimmable
Packaging: Bulk
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IPB80P04P407ATMA2 IPB80P04P407ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783099142e25 Description: MOSFET_(20V 40V) PG-TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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FP25R12KS4CBOSA1 FP25R12KS4CBOSA1 Infineon Technologies Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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TLE4290G Infineon Technologies Infineon-TLE4290-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f85822a1f7b Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Delay, Power Good
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 230 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
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2EDN7534FXTMA1 2EDN7534FXTMA1 Infineon Technologies Infineon_2EDN7533B_DataSheet_v01_00_EN.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Packaging: Tape & Reel (TR)
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Rise / Fall Time (Typ): 8.6ns, 6ns
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 5A, 5A
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Supplier Device Package: PG-DSO-8
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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2EDN7534FXTMA1 2EDN7534FXTMA1 Infineon Technologies Infineon_2EDN7533B_DataSheet_v01_00_EN.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Packaging: Cut Tape (CT)
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Rise / Fall Time (Typ): 8.6ns, 6ns
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 5A, 5A
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Supplier Device Package: PG-DSO-8
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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FD1000R33HE3KBOSA1 Infineon Technologies Infineon-FD1000R33HE3_K-DataSheet-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d76007b9a7266 Description: IGBT MODULE 3300V 1000A
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 11500 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS500R17OE4DPBOSA1 FS500R17OE4DPBOSA1 Infineon Technologies Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26 Description: IGBT MODULE 1700V 1000A MODULE
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
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FS500R17OE4DPBOSA1 FS500R17OE4DPBOSA1 Infineon Technologies Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26 Description: IGBT MODULE 1700V 1000A MODULE
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TDA5225HTXUMA1 Infineon Technologies Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f Description: TDA5225HTXU - RF RECEIVER
Packaging: Bulk
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TDA5221XUMA1 TDA5221XUMA1 Infineon Technologies Infineon-TDA5221-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e2876b8463cf3 Description: RF RX ASK/FSK 300-340MHZ 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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TLE42672GATMA2CT TLE42672GATMA2CT Infineon Technologies INFNS28001-1.pdf?t.download=true&u=ovmfp3 Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
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CY95F108AKSPFV-GSE1 CY95F108AKSPFV-GSE1 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 64LQFP
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BTS133AKSA1 BTS133AKSA1 Infineon Technologies Description: IC PWR SWITCH
Features: Slew Rate Controlled
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
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IPD12CN10NG IPD12CN10NG Infineon Technologies INFNS30235-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
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BTS40K21EJCXUMA1 BTS40K21EJCXUMA1 Infineon Technologies BTS40k2-1EJC.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
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PEB333HTV2.2 Infineon Technologies Description: VINETIC VOICE OVER IP PROCESSOR
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IPW65R060CFD7XKSA1 IPW65R060CFD7XKSA1 Infineon Technologies Infineon-IPW65R060CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f43b74492 Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
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IPLK60R600PFD7ATMA1 IPLK60R600PFD7ATMA1 Infineon Technologies Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86 Description: MOSFET N-CH 600V 7A THIN-PAK
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
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IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 Infineon Technologies Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8 Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 Infineon Technologies Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8 Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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IM323L6GXKMA1 IM323L6GXKMA1 Infineon Technologies Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2 Description: IGBT IPM 600V 15A 26-PWRDIP MOD
Voltage: 600 V
Current: 15 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module, Offset Leads
Packaging: Tube
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BSC0303LSATMA1 BSC0303LSATMA1 Infineon Technologies Infineon-BSC0303LS-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172c768685d0d25 Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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XC2361E136F128LRAAKXQMA1 XC2361E136F128LRAAKXQMA1 Infineon Technologies Infineon-xc236[17]e-DS-v01_03-EN.pdf?fileId=db3a304333227b5e0133405dda741ce6 Description: IC MCU 16BIT 100LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 98K x 8
Program Memory Size: 1.06MB (1.06M x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 75
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x12b
Core Processor: C166SV2
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IDD03SG60CXTMA2 IDD03SG60CXTMA2 Infineon Technologies Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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BGA825L6SE6327XTSA1 BGA825L6SE6327XTSA1 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Test Frequency: 1.575GHz
P1dB: -10dBm
Noise Figure: 0.6dB
Current - Supply: 4.8mA
Gain: 17dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: GPS
Frequency: 1.55GHz ~ 1.615GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: TSLP-6-3
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BGS15MU14E6327XTSA1 BGS15MU14E6327XTSA1 Infineon Technologies Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Part Status: Active
Supplier Device Package: PG-ULGA-14-1
Isolation: 48dB
Test Frequency: 5.925GHz
Frequency Range: 400MHz ~ 6GHz
Insertion Loss: 1.05dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: General Purpose
Circuit: SP5T
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 14-UFLGA Exposed Pad
Packaging: Tape & Reel (TR)
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BGS15MU14E6327XTSA1 BGS15MU14E6327XTSA1 Infineon Technologies Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Part Status: Active
Supplier Device Package: PG-ULGA-14-1
Isolation: 48dB
Test Frequency: 5.925GHz
Frequency Range: 400MHz ~ 6GHz
Insertion Loss: 1.05dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: General Purpose
Circuit: SP5T
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 14-UFLGA Exposed Pad
Packaging: Cut Tape (CT)
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BGS17GA14E6327XTSA1 Infineon Technologies Infineon-BGS17GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e0604064759 Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
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PBL386212QNA Infineon Technologies ERICS00541-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38621/2QNT-INF Infineon Technologies Description: SLIC, BIPOLAR, PQCC28
Packaging: Bulk
Produkt ist nicht verfügbar
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PBL38621/2QNT Infineon Technologies INFNS17910-1.pdf?t.download=true&u=5oefqw Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
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IDW40G65C5B IDW40G65C5B Infineon Technologies Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1 Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
Produkt ist nicht verfügbar
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BGT60TR13CE6327XUMA1 BGT60TR13CE6327XUMA1 Infineon Technologies Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
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BGT60TR13CE6327XUMA1 BGT60TR13CE6327XUMA1 Infineon Technologies Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
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TZ500N16KOFHPSA1 TZ500N16KOFHPSA1 Infineon Technologies Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21 Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
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TZ500N14KOFHPSA1 TZ500N14KOFHPSA1 Infineon Technologies TZ500N.pdf Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
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TZ600N14KOFHPSA1 TZ600N14KOFHPSA1 Infineon Technologies TZ600N.pdf Description: SCR MODULE 1.6KV 1050A MODULE
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REFFRIDGED111TRC2SLTOBO1 REFFRIDGED111TRC2SLTOBO1 Infineon Technologies infineon-ikd04n60rc2-datasheet-en.pdf Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
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TLV49645TBXALA1 TLV49645TBXALA1 Infineon Technologies INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLI49631MXTSA1 TLI49631MXTSA1 Infineon Technologies Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7 Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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BSM400GA170DLS Infineon Technologies EUPCS00266-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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IPB80P03P4L07ATMA2 IPB80P03P4L07ATMA2 Infineon Technologies Infineon-I80P03P4L_07-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ed65b827fd Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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KITIM69D127V11FLEXTOBO1 KITIM69D127V11FLEXTOBO1 Infineon Technologies Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
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IFX2931GV33 IFX2931GV33 Infineon Technologies INFNS16937-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED POS LDO REG
Current - Supply (Max): 15 mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 1.1V @ 100mA
PSRR: 80dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-8-1
Number of Regulators: 1
Voltage - Input (Max): 26V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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IFX8117MEV33 IFX8117MEV33 Infineon Technologies INFNS15203-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
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TLE4954CE4807BAMA1 Infineon Technologies 001651793.pdf Description: SPEED & CURRENT SENSORS
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BAV 99 E6433 BAV 99 E6433 Infineon Technologies bav99series.pdf Description: DIODE ARRAY GP 80V 200MA SOT23
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ISP06P008NSATMA1 Infineon Technologies Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 Infineon Technologies Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
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IRFI7446GPBF IRFI7446GPBF Infineon Technologies irfi7446gpbf.pdf Description: MOSFET N-CH 40V 80A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A/75A 2WDSON
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A/75A 2WDSON
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TLF4949EJ TLF4949EJ Infineon Technologies Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29 Description: IC REG LINEAR VOLT TLF4949
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SAK-TC1784F320F180ELBAKXUMA1 TC1784_DS_v111.pdf?fileId=db3a304336ca04c90136ca92f1cd00a6
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32 B
Produkt ist nicht verfügbar
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TC297TX128F300NBCKXUMA2 Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TX128F300NBCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Number of I/O: 263
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 768K x 8
Program Memory Type: FLASH
RAM Size: 2.7M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Produkt ist nicht verfügbar
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TC297TX128F300NBCKXUMA2 Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TX128F300NBCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
Number of I/O: 263
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 768K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 2.7M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
DigiKey Programmable: Not Verified
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TC277TP64F200NDCKXUMA3 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277TP64F200NDCKXUMA3
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
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TC277TP64F200NDCKXUMA3 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277TP64F200NDCKXUMA3
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
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10+116.06 EUR
25+109.09 EUR
100+101.41 EUR
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TLD5190IVREGEVALTOBO1 Infineon-TLD5190IVREG-EVAL-UserManual-v01_00-EN.pdf?fileId=5546d46273a5366f017405cdf5150eac
TLD5190IVREGEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5190QV
Part Status: Active
Outputs and Type: 1, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: TLD5190QV
Current - Output / Channel: 1.5A
Voltage - Input: 5.5V ~ 35V
Voltage - Output: 5.5V ~ 41.8V
Features: Dimmable
Packaging: Bulk
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IPB80P04P407ATMA2 Infineon-IPP_B_I80P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783099142e25
IPB80P04P407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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FP25R12KS4CBOSA1 Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d
FP25R12KS4CBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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3+212.11 EUR
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TLE4290G Infineon-TLE4290-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f85822a1f7b
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Delay, Power Good
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 230 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
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217+2.92 EUR
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2EDN7534FXTMA1 Infineon_2EDN7533B_DataSheet_v01_00_EN.pdf
2EDN7534FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Packaging: Tape & Reel (TR)
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Rise / Fall Time (Typ): 8.6ns, 6ns
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 5A, 5A
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Supplier Device Package: PG-DSO-8
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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2500+0.61 EUR
5000+0.6 EUR
7500+0.58 EUR
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2EDN7534FXTMA1 Infineon_2EDN7533B_DataSheet_v01_00_EN.pdf
2EDN7534FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Packaging: Cut Tape (CT)
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Rise / Fall Time (Typ): 8.6ns, 6ns
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 5A, 5A
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Supplier Device Package: PG-DSO-8
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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16+1.34 EUR
23+0.95 EUR
25+0.84 EUR
100+0.75 EUR
250+0.69 EUR
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1000+0.64 EUR
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FD1000R33HE3KBOSA1 Infineon-FD1000R33HE3_K-DataSheet-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d76007b9a7266
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 11500 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FS500R17OE4DPBOSA1 Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26
FS500R17OE4DPBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
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1+1406.62 EUR
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FS500R17OE4DPBOSA1 Infineon-FS500R17OE4DP-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584f1b6b760b26
FS500R17OE4DPBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TDA5225HTXUMA1 Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f
Hersteller: Infineon Technologies
Description: TDA5225HTXU - RF RECEIVER
Packaging: Bulk
Produkt ist nicht verfügbar
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TDA5221XUMA1 Infineon-TDA5221-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e2876b8463cf3
TDA5221XUMA1
Hersteller: Infineon Technologies
Description: RF RX ASK/FSK 300-340MHZ 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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153+3.59 EUR
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TLE42672GATMA2CT INFNS28001-1.pdf?t.download=true&u=ovmfp3
TLE42672GATMA2CT
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
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213+2.53 EUR
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CY95F108AKSPFV-GSE1
CY95F108AKSPFV-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 64LQFP
Produkt ist nicht verfügbar
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BTS133AKSA1
BTS133AKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Features: Slew Rate Controlled
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IPD12CN10NG INFNS30235-1.pdf?t.download=true&u=5oefqw
IPD12CN10NG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTS40K21EJCXUMA1 BTS40k2-1EJC.pdf
BTS40K21EJCXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Produkt ist nicht verfügbar
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PEB333HTV2.2
Hersteller: Infineon Technologies
Description: VINETIC VOICE OVER IP PROCESSOR
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30+19.91 EUR
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IPW65R060CFD7XKSA1 Infineon-IPW65R060CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f43b74492
IPW65R060CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R600PFD7ATMA1 Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86
IPLK60R600PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7A THIN-PAK
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IAUC41N06S5N102ATMA1 Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8
IAUC41N06S5N102ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC41N06S5N102ATMA1 Infineon-IAUC41N06S5N102-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4e60b6fe8
IAUC41N06S5N102ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4985 Stücke:
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AnzahlPrivatkunde
8+2.75 EUR
13+1.73 EUR
50+1.29 EUR
100+1.14 EUR
500+0.89 EUR
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IM323L6GXKMA1 Infineon-IM323-L6G_IM323-L6G2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7f2a768a017f548423c34ff2
IM323L6GXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 26-PWRDIP MOD
Voltage: 600 V
Current: 15 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module, Offset Leads
Packaging: Tube
Produkt ist nicht verfügbar
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BSC0303LSATMA1 Infineon-BSC0303LS-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172c768685d0d25
BSC0303LSATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XC2361E136F128LRAAKXQMA1 Infineon-xc236[17]e-DS-v01_03-EN.pdf?fileId=db3a304333227b5e0133405dda741ce6
XC2361E136F128LRAAKXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 98K x 8
Program Memory Size: 1.06MB (1.06M x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 75
Part Status: Active
Supplier Device Package: PG-LQFP-100-8
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x12b
Core Processor: C166SV2
Produkt ist nicht verfügbar
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IDD03SG60CXTMA2 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
IDD03SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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BGA825L6SE6327XTSA1 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA825L6SE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Test Frequency: 1.575GHz
P1dB: -10dBm
Noise Figure: 0.6dB
Current - Supply: 4.8mA
Gain: 17dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: GPS
Frequency: 1.55GHz ~ 1.615GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: TSLP-6-3
Produkt ist nicht verfügbar
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BGS15MU14E6327XTSA1 Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f
BGS15MU14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Part Status: Active
Supplier Device Package: PG-ULGA-14-1
Isolation: 48dB
Test Frequency: 5.925GHz
Frequency Range: 400MHz ~ 6GHz
Insertion Loss: 1.05dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: General Purpose
Circuit: SP5T
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 14-UFLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGS15MU14E6327XTSA1 Infineon-BGS15MU14-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174da3c4903223f
BGS15MU14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Part Status: Active
Supplier Device Package: PG-ULGA-14-1
Isolation: 48dB
Test Frequency: 5.925GHz
Frequency Range: 400MHz ~ 6GHz
Insertion Loss: 1.05dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: General Purpose
Circuit: SP5T
Mounting Type: Surface Mount
Impedance: 50Ohm
Package / Case: 14-UFLGA Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BGS17GA14E6327XTSA1 Infineon-BGS17GA14-DS-v03_00-EN.pdf?fileId=5546d46253f6505701543e0604064759
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 8800 Stücke:
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AnzahlPrivatkunde
1065+0.56 EUR
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PBL386212QNA ERICS00541-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
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AnzahlPrivatkunde
172+3.34 EUR
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PBL38621/2QNT-INF
Hersteller: Infineon Technologies
Description: SLIC, BIPOLAR, PQCC28
Packaging: Bulk
Produkt ist nicht verfügbar
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PBL38621/2QNT INFNS17910-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
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41+14.11 EUR
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IDW40G65C5B Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1
IDW40G65C5B
Hersteller: Infineon Technologies
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
Produkt ist nicht verfügbar
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
BGT60TR13CE6327XUMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
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AnzahlPrivatkunde
4500+22.76 EUR
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
BGT60TR13CE6327XUMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
auf Bestellung 5891 Stücke:
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1+36.1 EUR
10+31.46 EUR
25+29.85 EUR
100+27.63 EUR
250+26.31 EUR
500+25.64 EUR
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TZ500N16KOFHPSA1 Infineon-TZ500N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42f8a294c21
TZ500N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
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1+352.05 EUR
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TZ500N14KOFHPSA1 TZ500N.pdf
TZ500N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
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TZ600N14KOFHPSA1 TZ600N.pdf
TZ600N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Produkt ist nicht verfügbar
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REFFRIDGED111TRC2SLTOBO1 infineon-ikd04n60rc2-datasheet-en.pdf
REFFRIDGED111TRC2SLTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
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1+473.88 EUR
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TLV49645TBXALA1 INFN-S-A0001301455-1.pdf?t.download=true&u=5oefqw
TLV49645TBXALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLI49631MXTSA1 Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7
TLI49631MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 4470 Stücke:
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31+0.69 EUR
36+0.6 EUR
38+0.56 EUR
41+0.52 EUR
50+0.5 EUR
100+0.46 EUR
500+0.42 EUR
1000+0.4 EUR
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BSM400GA170DLS EUPCS00266-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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2+243.95 EUR
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IPB80P03P4L07ATMA2 Infineon-I80P03P4L_07-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ed65b827fd
IPB80P03P4L07ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KITIM69D127V11FLEXTOBO1
KITIM69D127V11FLEXTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
auf Bestellung 1 Stücke:
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1+54.98 EUR
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IFX2931GV33 INFNS16937-1.pdf?t.download=true&u=5oefqw
IFX2931GV33
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Current - Supply (Max): 15 mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 1.1V @ 100mA
PSRR: 80dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-8-1
Number of Regulators: 1
Voltage - Input (Max): 26V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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1648+0.38 EUR
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IFX8117MEV33 INFNS15203-1.pdf?t.download=true&u=5oefqw
IFX8117MEV33
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
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1501+0.44 EUR
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TLE4954CE4807BAMA1 001651793.pdf
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
152+3.8 EUR
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BAV 99 E6433 bav99series.pdf
BAV 99 E6433
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Produkt ist nicht verfügbar
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ISP06P008NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.11 EUR
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+2.71 EUR
100+1.82 EUR
500+1.44 EUR
1000+1.32 EUR
2000+1.23 EUR
Mindestbestellmenge: 5 Stücke
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IRFI7446GPBF irfi7446gpbf.pdf
IRFI7446GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
338+1.7 EUR
Mindestbestellmenge: 338 Stücke
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BSF030NE2LQXUMA1 BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSF030NE2LQXUMA1 BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
auf Bestellung 4785 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.23 EUR
11+2 EUR
100+1.56 EUR
500+1.29 EUR
1000+1.01 EUR
2000+0.94 EUR
Mindestbestellmenge: 10 Stücke
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TLF4949EJ Infineon-TLF4949-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa03ca8d3f29
TLF4949EJ
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
737+0.86 EUR
Mindestbestellmenge: 737 Stücke
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