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TC324LP16F160FAALXUMA1 TC324LP16F160FAALXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 1MB FLASH 144TQFP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, I2S, PWM, WDT
Connectivity: DMA, I2S, PWM, WDT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Single-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 152K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 Infineon Technologies Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Description: IAUC60N04S6L039ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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5000+0.45 EUR
10000+0.43 EUR
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IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 Infineon Technologies Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Description: IAUC60N04S6L039ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
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IAUC60N04S6N050HATMA1 IAUC60N04S6N050HATMA1 Infineon Technologies Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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IAUC60N04S6N050HATMA1 IAUC60N04S6N050HATMA1 Infineon Technologies Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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10+2.07 EUR
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500+1.11 EUR
1000+1.02 EUR
2000+0.98 EUR
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IAUC60N04S6L045HATMA1 IAUC60N04S6L045HATMA1 Infineon Technologies Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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IAUC60N04S6L045HATMA1 IAUC60N04S6L045HATMA1 Infineon Technologies Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
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IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 Infineon Technologies Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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5000+1.09 EUR
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IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 Infineon Technologies Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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100+1.74 EUR
500+1.39 EUR
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FP15R12KS4CBPSA1 Infineon Technologies Infineon-FP15R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a55a5169 Description: LOW POWER ECONO AG-ECONO2C-211
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FZ1000R33HE3C1NOSA1 Infineon Technologies Infineon-FZ1000R33HE3-DataSheet-v03_04-EN.pdf?fileId=db3a30431ce5fb52011d760f30227290 Description: IHV IHM T XHP 3 3-6 5K
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FP15R12KS4CBOSA1 FP15R12KS4CBOSA1 Infineon Technologies Infineon-FP15R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a55a5169 Description: IGBT MOD 1200V 30A 180W
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ1000R33HE3B60BPSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
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FD1000R33HL3KB60BPSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FD1000R33HE3KB60BPSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IPWS65R050CFD7AXKSA1 IPWS65R050CFD7AXKSA1 Infineon Technologies Infineon-IPWS65R050CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e536cc52910 Description: MOSFET N-CH 650V 45A TO247-3-41
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
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IPD11DP10NMATMA1 IPD11DP10NMATMA1 Infineon Technologies Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40 Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
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IPD11DP10NMATMA1 IPD11DP10NMATMA1 Infineon Technologies Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40 Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
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10+2.12 EUR
100+1.44 EUR
500+1.14 EUR
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CY62146G30-45ZSXA CY62146G30-45ZSXA Infineon Technologies Infineon-CY62146G_MoBL(R)_Automotive_4-Mbit_(256K_words_x_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed76903588f Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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TLE4470GS TLE4470GS Infineon Technologies Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 180mA, 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-14
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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TLE4287G TLE4287G Infineon Technologies 4_cip12009.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED STNDRD REG
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 2.5V @ 200mA
PSRR: 55dB (100Hz)
Part Status: Active
Control Features: Enable, Hold, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Regulators: 1
Voltage - Input (Max): 42V
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KITA2GTC3675VTFTTOBO1 KITA2GTC3675VTFTTOBO1 Infineon Technologies Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba Description: AURIX TC367 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC367
Platform: AURIX TC367 5V TFT
Part Status: Active
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1+454.06 EUR
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IPD90P03P4L04ATMA2 IPD90P03P4L04ATMA2 Infineon Technologies Infineon-IPD90P03P4L-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e8373a27c4 Description: MOSFET P-CH 30V 90A TO252-31
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD90P03P4L04ATMA2 IPD90P03P4L04ATMA2 Infineon Technologies Infineon-IPD90P03P4L-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e8373a27c4 Description: MOSFET P-CH 30V 90A TO252-31
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
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TC377TX96F300SABKXUMA1 TC377TX96F300SABKXUMA1 Infineon Technologies Infineon-AURIX-TC37xEXT-Addendum-DataSheet-v01_03-EN.pdf?fileId=5546d46274dd77260174e925df8f384a Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Core Processor: TriCore™
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1.1M x 8
Program Memory Size: 6MB (6M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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TC377TX96F300SABKXUMA1 TC377TX96F300SABKXUMA1 Infineon Technologies Infineon-AURIX-TC37xEXT-Addendum-DataSheet-v01_03-EN.pdf?fileId=5546d46274dd77260174e925df8f384a Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Core Processor: TriCore™
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1.1M x 8
Program Memory Size: 6MB (6M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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BSM35GP120BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2C-211
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 230 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 45 A
Part Status: Last Time Buy
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 17.5A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TLF44773LAXUMA1 Infineon Technologies Infineon-TLF4477-3LA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187a11ba6890960 Description: OPTIREG LINEAR PG-TSON-14
Packaging: Tape & Reel (TR)
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BTS426L1E3062AAUMA1 BTS426L1E3062AAUMA1 Infineon Technologies Infineon-BTS426L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b051743602 Description: IC PWR SWITCH
Packaging: Tape & Reel (TR)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
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BTS409L1E3062AAUMA1 BTS409L1E3062AAUMA1 Infineon Technologies Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a Description: IC PWR SWITCH
Packaging: Tape & Reel (TR)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
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IFX25001TFV33ATMA2 IFX25001TFV33ATMA2 Infineon Technologies Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9 Description: IC REG LINEAR 3.3V 400MA TO252-3
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TO252-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IFX25001TFV33ATMA2 IFX25001TFV33ATMA2 Infineon Technologies Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9 Description: IC REG LINEAR 3.3V 400MA TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TO252-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Produkt ist nicht verfügbar
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ND104N16KHPSA1 Infineon Technologies INFNS29282-1.pdf?t.download=true&u=5oefqw Description: DIODE STD 1600V 104A BGPB201
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 135°C
Supplier Device Package: BG-PB20-1
Current - Average Rectified (Io): 104A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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CY62128ELL-55ZAXE CY62128ELL-55ZAXE Infineon Technologies Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Description: IC SRAM 1MBIT PARALLEL 32STSOP
Packaging: Bulk
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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TLE4295GV33 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
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TLE4295GV26 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LINEAR FIXED POS LDO REG
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Bulk
Current - Supply (Max): 4 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.4V @ 20mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Power Fail
Voltage - Output (Min/Fixed): 2.6V
Supplier Device Package: PG-SCT595-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30mA
Mounting Type: Surface Mount
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TLE4295GV30 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LINEAR VOLT TLE4295
Current - Supply (Max): 4 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.4V @ 20mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Power Fail
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: PG-SCT595-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Bulk
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BSM15GD120DN2E3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 145 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Supplier Device Package: AG-ECONO2A
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Operating Temperature: 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IPI200N25N3GAKSA1 IPI200N25N3GAKSA1 Infineon Technologies IPP_B_I_200N25N3+G+Rev2.4.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971 Description: MOSFET N-CH 250V 64A TO262-3
Produkt ist nicht verfügbar
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1EDB8275FXUMA1 1EDB8275FXUMA1 Infineon Technologies infineon-1edb7275f-datasheet-en.pdf Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 5.4A, 9.8A
Technology: Magnetic Coupling
Current - Output High, Low: 5.4A, 9.8A
Voltage - Isolation: 3000Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.3ns, 5ns
Common Mode Transient Immunity (Min): 300V/ns
Pulse Width Distortion (Max): 2ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 8.5V ~ 20V
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1EDB8275FXUMA1 1EDB8275FXUMA1 Infineon Technologies infineon-1edb7275f-datasheet-en.pdf Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 5.4A, 9.8A
Technology: Magnetic Coupling
Current - Output High, Low: 5.4A, 9.8A
Voltage - Isolation: 3000Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.3ns, 5ns
Common Mode Transient Immunity (Min): 300V/ns
Pulse Width Distortion (Max): 2ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 8.5V ~ 20V
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1EDB6275FXUMA1 1EDB6275FXUMA1 Infineon Technologies infineon-1edb7275f-datasheet-en.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 8.3ns, 5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 9A
DigiKey Programmable: Not Verified
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IPD60R3K4CEAUMA1 IPD60R3K4CEAUMA1 Infineon Technologies Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Description: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
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IPD60R3K4CEAUMA1 IPD60R3K4CEAUMA1 Infineon Technologies Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Description: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
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BC807-16E6327 BC807-16E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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FZ1200R45HL3S7BPSA1 Infineon Technologies Infineon-FZ1200R45HL3_S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7cdc391c017ce6075d475e92 Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400000 W
Voltage - Collector Emitter Breakdown (Max): 5900 V
Current - Collector (Ic) (Max): 1200 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1.2kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F3L200R12N2H3B47BPSA2 Infineon Technologies Infineon-F3L200R12N2H3_B47-DS-v03_00-EN.pdf?fileId=5546d462647e95a6016492e792bf4892 Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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1SD418F2FX800R33KF2NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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IKWH50N65WR6XKSA1 IKWH50N65WR6XKSA1 Infineon Technologies Infineon-IKWH50N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63b0826fda Description: IGBT TRENCH FS 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/351ns
Switching Energy: 1.5mJ (on), 730µJ (off)
Test Condition: 400V, 50A, 22Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 205 W
auf Bestellung 395 Stücke:
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30+4.67 EUR
120+3.85 EUR
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PEB31665HV1.3 Infineon Technologies Description: MUSLIC MULTICHANNEL SLIC
Packaging: Bulk
auf Bestellung 1000 Stücke:
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PEB31665HV1.2D Infineon Technologies Description: MUSLIC MULTICHANNEL SLIC
Packaging: Bulk
auf Bestellung 169 Stücke:
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BC857BE6327 BC857BE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
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T2001N34TOFXPSA1 Infineon Technologies T2001N_Rev7.0_05-02-11.pdf Description: SCR MODULE 3.6KV 29900A TO-200AF
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 29900 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1900 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IM72D128V01XTSA1 IM72D128V01XTSA1 Infineon Technologies Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
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IM72D128V01XTSA1 IM72D128V01XTSA1 Infineon Technologies Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
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REFLLCBUCK4CH320WTOBO1 REFLLCBUCK4CH320WTOBO1 Infineon Technologies Infineon-Reference_board_REF_LLC_BUCK_4CH_320W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a01735b49757e1f3b Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 3V ~ 71V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Part Status: Active
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BAS70-07WH6327 BAS70-07WH6327 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT343-4-1
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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BAS70-02W E6327 BAS70-02W E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSCD802
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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8955+0.045 EUR
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BAS70-02WE6327 BAS70-02WE6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSCD802
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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S25FL128SDSNFI000 S25FL128SDSNFI000 Infineon Technologies 001-98283%20Rev%20T.pdf Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 338 Stücke:
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3+6.23 EUR
10+5.8 EUR
25+5.63 EUR
50+5.5 EUR
100+5.37 EUR
338+5.14 EUR
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TC324LP16F160FAALXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC324LP16F160FAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144TQFP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, I2S, PWM, WDT
Connectivity: DMA, I2S, PWM, WDT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Single-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 152K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
IAUC60N04S6L039ATMA1
Hersteller: Infineon Technologies
Description: IAUC60N04S6L039ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPreis
5000+0.45 EUR
10000+0.43 EUR
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
IAUC60N04S6L039ATMA1
Hersteller: Infineon Technologies
Description: IAUC60N04S6L039ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.02mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26130 Stücke:
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AnzahlPreis
10+1.92 EUR
15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
IAUC60N04S6N050HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
IAUC60N04S6N050HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4897 Stücke:
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AnzahlPreis
6+3.24 EUR
10+2.07 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.02 EUR
2000+0.98 EUR
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
IAUC60N04S6L045HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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AnzahlPreis
5000+0.77 EUR
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
IAUC60N04S6L045HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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6+2.97 EUR
10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.95 EUR
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IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
IAUC60N04S6N031HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPreis
5000+1.09 EUR
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IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
IAUC60N04S6N031HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5867 Stücke:
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AnzahlPreis
5+3.96 EUR
10+2.55 EUR
100+1.74 EUR
500+1.39 EUR
1000+1.29 EUR
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FP15R12KS4CBPSA1 Infineon-FP15R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a55a5169
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-211
Produkt ist nicht verfügbar
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FZ1000R33HE3C1NOSA1 Infineon-FZ1000R33HE3-DataSheet-v03_04-EN.pdf?fileId=db3a30431ce5fb52011d760f30227290
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FP15R12KS4CBOSA1 Infineon-FP15R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a55a5169
FP15R12KS4CBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 30A 180W
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ1000R33HE3B60BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Produkt ist nicht verfügbar
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FD1000R33HL3KB60BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FD1000R33HE3KB60BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600000 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IPWS65R050CFD7AXKSA1 Infineon-IPWS65R050CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01730e536cc52910
IPWS65R050CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+21.33 EUR
10+18.78 EUR
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IPD11DP10NMATMA1 Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40
IPD11DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.94 EUR
Mindestbestellmenge: 2500 Stücke
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IPD11DP10NMATMA1 Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40
IPD11DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
auf Bestellung 2916 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.33 EUR
10+2.12 EUR
100+1.44 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 6 Stücke
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CY62146G30-45ZSXA Infineon-CY62146G_MoBL(R)_Automotive_4-Mbit_(256K_words_x_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed76903588f
CY62146G30-45ZSXA
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4470GS Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a
TLE4470GS
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 180mA, 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 2
Supplier Device Package: PG-DSO-14
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
263+1.85 EUR
Mindestbestellmenge: 263 Stücke
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TLE4287G 4_cip12009.pdf?t.download=true&u=5oefqw
TLE4287G
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED STNDRD REG
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 2.5V @ 200mA
PSRR: 55dB (100Hz)
Part Status: Active
Control Features: Enable, Hold, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Regulators: 1
Voltage - Input (Max): 42V
auf Bestellung 24973 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
215+2.33 EUR
Mindestbestellmenge: 215 Stücke
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KITA2GTC3675VTFTTOBO1 Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba
KITA2GTC3675VTFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC367 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC367
Platform: AURIX TC367 5V TFT
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+454.06 EUR
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IPD90P03P4L04ATMA2 Infineon-IPD90P03P4L-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e8373a27c4
IPD90P03P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.19 EUR
5000+1.17 EUR
Mindestbestellmenge: 2500 Stücke
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IPD90P03P4L04ATMA2 Infineon-IPD90P03P4L-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e8373a27c4
IPD90P03P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 5103 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.01 EUR
10+2.59 EUR
100+1.77 EUR
500+1.43 EUR
Mindestbestellmenge: 5 Stücke
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TC377TX96F300SABKXUMA1 Infineon-AURIX-TC37xEXT-Addendum-DataSheet-v01_03-EN.pdf?fileId=5546d46274dd77260174e925df8f384a
TC377TX96F300SABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Core Processor: TriCore™
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1.1M x 8
Program Memory Size: 6MB (6M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+51.46 EUR
Mindestbestellmenge: 1000 Stücke
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TC377TX96F300SABKXUMA1 Infineon-AURIX-TC37xEXT-Addendum-DataSheet-v01_03-EN.pdf?fileId=5546d46274dd77260174e925df8f384a
TC377TX96F300SABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit Tri-Core
Core Processor: TriCore™
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1.1M x 8
Program Memory Size: 6MB (6M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 1274 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+75.84 EUR
10+62.29 EUR
25+58.9 EUR
100+55.18 EUR
250+53.41 EUR
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BSM35GP120BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-211
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 230 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 45 A
Part Status: Last Time Buy
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 17.5A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TLF44773LAXUMA1 Infineon-TLF4477-3LA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187a11ba6890960
Hersteller: Infineon Technologies
Description: OPTIREG LINEAR PG-TSON-14
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+2.18 EUR
Mindestbestellmenge: 5000 Stücke
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BTS426L1E3062AAUMA1 Infineon-BTS426L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b051743602
BTS426L1E3062AAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Tape & Reel (TR)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+4.8 EUR
2000+4.69 EUR
Mindestbestellmenge: 1000 Stücke
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BTS409L1E3062AAUMA1 Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a
BTS409L1E3062AAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Tape & Reel (TR)
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IFX25001TFV33ATMA2 Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9
IFX25001TFV33ATMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 400MA TO252-3
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TO252-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IFX25001TFV33ATMA2 Infineon-IFX25001-DS-v01_10-EN.pdf?fileId=5546d46269e1c019016ab652474f55d9
IFX25001TFV33ATMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 400MA TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 1.2V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-TO252-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Produkt ist nicht verfügbar
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ND104N16KHPSA1 INFNS29282-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DIODE STD 1600V 104A BGPB201
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 135°C
Supplier Device Package: BG-PB20-1
Current - Average Rectified (Io): 104A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+164.04 EUR
Mindestbestellmenge: 3 Stücke
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CY62128ELL-55ZAXE Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
CY62128ELL-55ZAXE
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32STSOP
Packaging: Bulk
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 672 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+8.73 EUR
Mindestbestellmenge: 56 Stücke
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TLE4295GV33 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
472+0.96 EUR
Mindestbestellmenge: 472 Stücke
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TLE4295GV26 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Bulk
Current - Supply (Max): 4 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.4V @ 20mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Power Fail
Voltage - Output (Min/Fixed): 2.6V
Supplier Device Package: PG-SCT595-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30mA
Mounting Type: Surface Mount
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
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742+0.64 EUR
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TLE4295GV30 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE4295
Current - Supply (Max): 4 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.4V @ 20mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Power Fail
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: PG-SCT595-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 30mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Bulk
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742+0.64 EUR
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BSM15GD120DN2E3224BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 145 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Supplier Device Package: AG-ECONO2A
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Operating Temperature: 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IPI200N25N3GAKSA1 IPP_B_I_200N25N3+G+Rev2.4.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971
IPI200N25N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 64A TO262-3
Produkt ist nicht verfügbar
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1EDB8275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
1EDB8275FXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 5.4A, 9.8A
Technology: Magnetic Coupling
Current - Output High, Low: 5.4A, 9.8A
Voltage - Isolation: 3000Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.3ns, 5ns
Common Mode Transient Immunity (Min): 300V/ns
Pulse Width Distortion (Max): 2ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 8.5V ~ 20V
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2500+1.14 EUR
5000+1.11 EUR
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1EDB8275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
1EDB8275FXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 5.4A, 9.8A
Technology: Magnetic Coupling
Current - Output High, Low: 5.4A, 9.8A
Voltage - Isolation: 3000Vrms
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.3ns, 5ns
Common Mode Transient Immunity (Min): 300V/ns
Pulse Width Distortion (Max): 2ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 8.5V ~ 20V
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8+2.31 EUR
11+1.68 EUR
25+1.52 EUR
100+1.35 EUR
250+1.27 EUR
500+1.22 EUR
1000+1.21 EUR
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1EDB6275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
1EDB6275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 8.3ns, 5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 9A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
IPD60R3K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
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2500+0.28 EUR
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IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
IPD60R3K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
auf Bestellung 3116 Stücke:
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16+1.16 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
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BC807-16E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-16E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 93000 Stücke:
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AnzahlPreis
7059+0.06 EUR
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FZ1200R45HL3S7BPSA1 Infineon-FZ1200R45HL3_S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7cdc391c017ce6075d475e92
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2400000 W
Voltage - Collector Emitter Breakdown (Max): 5900 V
Current - Collector (Ic) (Max): 1200 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB190
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1.2kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F3L200R12N2H3B47BPSA2 Infineon-F3L200R12N2H3_B47-DS-v03_00-EN.pdf?fileId=5546d462647e95a6016492e792bf4892
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 11.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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1SD418F2FX800R33KF2NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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IKWH50N65WR6XKSA1 Infineon-IKWH50N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63b0826fda
IKWH50N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/351ns
Switching Energy: 1.5mJ (on), 730µJ (off)
Test Condition: 400V, 50A, 22Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 205 W
auf Bestellung 395 Stücke:
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AnzahlPreis
3+8.38 EUR
30+4.67 EUR
120+3.85 EUR
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PEB31665HV1.3
Hersteller: Infineon Technologies
Description: MUSLIC MULTICHANNEL SLIC
Packaging: Bulk
auf Bestellung 1000 Stücke:
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AnzahlPreis
12+42.85 EUR
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PEB31665HV1.2D
Hersteller: Infineon Technologies
Description: MUSLIC MULTICHANNEL SLIC
Packaging: Bulk
auf Bestellung 169 Stücke:
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12+42.85 EUR
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BC857BE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Produkt ist nicht verfügbar
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T2001N34TOFXPSA1 T2001N_Rev7.0_05-02-11.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 3.6KV 29900A TO-200AF
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 29900 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1900 A
Number of SCRs, Diodes: 1 SCR
Produkt ist nicht verfügbar
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IM72D128V01XTSA1
IM72D128V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
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IM72D128V01XTSA1
IM72D128V01XTSA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
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REFLLCBUCK4CH320WTOBO1 Infineon-Reference_board_REF_LLC_BUCK_4CH_320W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a01735b49757e1f3b
REFLLCBUCK4CH320WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 3V ~ 71V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Part Status: Active
auf Bestellung 1 Stücke:
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1+368.09 EUR
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BAS70-07WH6327 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS70-07WH6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT343-4-1
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
auf Bestellung 46709 Stücke:
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AnzahlPreis
2777+0.19 EUR
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BAS70-02W E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-02W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSCD802
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 38367 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8955+0.045 EUR
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BAS70-02WE6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-02WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSCD802
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 26751 Stücke:
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AnzahlPreis
7059+0.059 EUR
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S25FL128SDSNFI000 001-98283%20Rev%20T.pdf
S25FL128SDSNFI000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.23 EUR
10+5.8 EUR
25+5.63 EUR
50+5.5 EUR
100+5.37 EUR
338+5.14 EUR
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