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IPN65R1K5CE IPN65R1K5CE Infineon Technologies Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50 Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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MA15037577NDSA1 Infineon Technologies Description: POWER MODULE IGBT
Produkt ist nicht verfügbar
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IPW65R310CFD IPW65R310CFD Infineon Technologies INFNS17578-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Power Dissipation (Max): 104.2W (Tc)
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IPW65R155CFD7XKSA1 IPW65R155CFD7XKSA1 Infineon Technologies Infineon-IPW65R155CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef402bf49c7 Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW65R125CFD7XKSA1 IPW65R125CFD7XKSA1 Infineon Technologies Infineon-IPW65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d74437bbc Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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30+5.76 EUR
120+4.81 EUR
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IPW65R090CFD7XKSA1 IPW65R090CFD7XKSA1 Infineon Technologies Infineon-IPW65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d48c07bb6 Description: HIGH POWER_NEW
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IPW65R018CFD7XKSA1 IPW65R018CFD7XKSA1 Infineon Technologies Infineon-IPW65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179ccdfdb6202d1 Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
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IPW65R110CFD7XKSA1 IPW65R110CFD7XKSA1 Infineon Technologies Infineon-IPW65R110CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d5e8e7bb9 Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+12.48 EUR
30+7.09 EUR
60+6.45 EUR
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IPW65R050CFD7AXKSA1 IPW65R050CFD7AXKSA1 Infineon Technologies Infineon-IPW65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171c0167ea2084c Description: MOSFET N-CH 650V 45A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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120+10.4 EUR
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IPW65R029CFD7XKSA1 IPW65R029CFD7XKSA1 Infineon Technologies Infineon-IPW65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f56af4495 Description: MOSFET N-CH 650V 69A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IPW65R15OCFDAFKSA1 Infineon Technologies Description: N-CHANNEL AUTOMOTIVE MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65F6048A Infineon Technologies Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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TLV493DA2BWXTMA1 TLV493DA2BWXTMA1 Infineon Technologies Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9 Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
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TLV493DA2BWXTMA1 TLV493DA2BWXTMA1 Infineon Technologies Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9 Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
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13+1.64 EUR
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50+1.46 EUR
100+1.4 EUR
500+1.27 EUR
1000+1.23 EUR
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CYTVIIBE1MSKTOBO1 Infineon Technologies Description: EVAL BOARD FOR CYT2B75CADES
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Platform: Arduino
Utilized IC / Part: CYT2B75CADES, TJA1057GTJ
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Produkt ist nicht verfügbar
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CY241V08SXC-41 CY241V08SXC-41 Infineon Technologies Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-SOIC
Type: Clock Generator
Frequency - Max: 27MHz
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214+2.93 EUR
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IPA60R120P7E8191XKSA1 Infineon Technologies Infineon-IPA60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1a4c2ab65f51 Description: MOSFET N-CH 600V TO220FP-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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BBY5305WH6327XTSA1554 BBY5305WH6327XTSA1554 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: BBY53 - VARACTOR DIODE
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3000+0.25 EUR
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IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 Infineon Technologies Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Description: TRENCH <= 40V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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10+4.03 EUR
100+2.8 EUR
500+2.27 EUR
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TD250N12KOF Infineon Technologies Description: TD250N12 - THYRISTOR / DIODE MOD
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F165LMHAXP F165LMHAXP Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 100MQFP
Part Status: Obsolete
Supplier Device Package: P-MQFP-100
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Number of I/O: 77
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F3L300R12ME4B23BOSA1 F3L300R12ME4B23BOSA1 Infineon Technologies Infineon-F3L300R12ME4_B23-DS-v03_01-EN.pdf?fileId=db3a304333b8a7ca0133fa6e9444448f Description: IGBT MOD 1200V 450A 1550W
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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2SP0115T2A0FF300R12NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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2SP0115T2A0FF450R17NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SP0115T2A0FF300R17NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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T1410N06TOFXPSA1 T1410N06TOFXPSA1 Infineon Technologies Infineon-T1410N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd8012863561884530b Description: SCR MODULE 600V 2500A DO-200AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2500 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 1490 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 23000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
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FS50R12N2T7B15BPSA2 FS50R12N2T7B15BPSA2 Infineon Technologies Infineon-FS50R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4acd62e2c Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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1+110.86 EUR
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FP50R12N2T7PB11BPSA1 FP50R12N2T7PB11BPSA1 Infineon Technologies Infineon-FP50R12N2T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a40e402e1d Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12N2T7B11BPSA2 Infineon Technologies Infineon-FP50R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0afe65ee717c Description: LOW POWER ECONO
Current - Collector Cutoff (Max): 10 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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PX7299EDQG005XUMA1 Infineon Technologies Description: IC REGULATOR 16VQFN
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PX7299EDQG005XUMA1 Infineon Technologies Description: IC REGULATOR 16VQFN
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IR3823AMTRPBFAUMA1 IR3823AMTRPBFAUMA1 Infineon Technologies Infineon-IR3823AMTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a017707220c305f1c Description: IC REG BUCK ADJ 3A 19IQFN
Packaging: Tape & Reel (TR)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Discontinued at Digi-Key
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IR3823AMTRPBFAUMA1 IR3823AMTRPBFAUMA1 Infineon Technologies Infineon-IR3823AMTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a017707220c305f1c Description: IC REG BUCK ADJ 3A 19IQFN
Packaging: Cut Tape (CT)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Discontinued at Digi-Key
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25+2.43 EUR
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IR3447AMTRPBFAUMA1 Infineon Technologies Infineon-IR3447AMTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d46276fb756a01772c4a5fae1293 Description: IC REG BUCK ADJ 25A VIQFN-29
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2V
Voltage - Output (Max): 7.5V
Synchronous Rectifier: Yes
Supplier Device Package: PG-VIQFN-29
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 25A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 29-PowerVFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSZ021N04LS6ATMA1 BSZ021N04LS6ATMA1 Infineon Technologies Infineon-BSZ021N04LS6-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168bd2c15304823 Description: MOSFET N-CH 40V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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10+2.38 EUR
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CY8C4126AZQ-S423 CY8C4126AZQ-S423 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69 Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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IR3565AMCP01TRP IR3565AMCP01TRP Infineon Technologies IR3565A_PB_v3.04_10-1-13.pdf Description: IC REG BUCK 48VQFN
Number of Outputs: 6
Part Status: Obsolete
Clock Sync: No
Output Phases: 4
Serial Interfaces: I²C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-48-900
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 XMC1201Q040F0200ABXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 XMC1201Q040F0200ABXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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BSM35GD120DN2E3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: AG-ECONO2B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BSM35GD120DLCE3224BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 80 µA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Last Time Buy
Supplier Device Package: AG-ECONO2A
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F1235R12KT4GBOSA1 F1235R12KT4GBOSA1 Infineon Technologies F12-35R12KT4G_Rev2_2013-11-04.pdf Description: IGBT MOD 1200V 35A 210W
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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TLS41205VCOREBOARDTOBO1 TLS41205VCOREBOARDTOBO1 Infineon Technologies Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f Description: TLS4120 5V CORE-BOARD
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FP100R12N2T7B11BPSA1 FP100R12N2T7B11BPSA1 Infineon Technologies Infineon-FP100R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c80027ecd0180a8df007a1d22 Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Current - Collector Cutoff (Max): 10 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS100R12N2T7B15BPSA1 FS100R12N2T7B15BPSA1 Infineon Technologies Infineon-FS100R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083afca973005 Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Current - Collector Cutoff (Max): 10 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TLE4966V1GHTSA1 TLE4966V1GHTSA1 Infineon Technologies Infineon-TLE4966V-1G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b512464fc0e06 Description: MAGNETIC SWITCH LATCH TSOP6-6-9
Test Condition: 25°C
Supplier Device Package: PG-TSOP6-6-9
Current - Output (Max): 10mA
Sensing Range: -4.1mT Trip, 4.1mT Release
Technology: Hall Effect
Voltage - Supply: 3.5V ~ 32V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
Polarization: Either
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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TLE4955CXAMA1 TLE4955CXAMA1 Infineon Technologies Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56 Description: MAG SWITCH SPEC PURP SSO-2-53
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-53
Packaging: Cut Tape (CT)
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500+2.55 EUR
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TLE4955CXAMA1 TLE4955CXAMA1 Infineon Technologies Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56 Description: MAG SWITCH SPEC PURP SSO-2-53
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-53
Packaging: Tape & Box (TB)
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FP50R06KE3BPSA1 FP50R06KE3BPSA1 Infineon Technologies Infineon-FP50R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4332c9b5a83 Description: IGBT MODULE 600V 60A AG-ECONO2C
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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DD241S12KHPSA1 Infineon Technologies DD241S.pdf Description: DIODE MOD GP 1200V 261A MOD
Current - Reverse Leakage @ Vr: 200 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 261A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TC397XP256F300SBCLXUMA1 TC397XP256F300SBCLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 2.75K x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
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TC399XX256F300SBCLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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TC399XP256F300SBCKXUMA1 TC399XP256F300SBCKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 100x12b
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TC399XP256F300SBCLXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FS03MR12A6MA1LBBPSA1 FS03MR12A6MA1LBBPSA1 Infineon Technologies Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011 Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Part Status: Active
Supplier Device Package: AG-HYBRIDD-2
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 400A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS03MR12A6MA1LB Infineon Technologies Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011 Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: AG-HYBRIDD-2
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 400A
Part Status: Active
Produkt ist nicht verfügbar
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IRF5810 IRF5810 Infineon Technologies irf5810.pdf Description: MOSFET 2P-CH 20V 2.9A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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FP75R12N2T7PB11BPSA1 FP75R12N2T7PB11BPSA1 Infineon Technologies Infineon-FP75R12N2T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a44b232e23 Description: IGBT MOD 1200V 75A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Current - Collector Cutoff (Max): 14 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
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1+212.25 EUR
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FS75R12N2T7B15BPSA2 FS75R12N2T7B15BPSA2 Infineon Technologies Infineon-FS75R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4c9cf2e2f Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Current - Collector Cutoff (Max): 14 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 15 Stücke:
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1+136.36 EUR
15+106.06 EUR
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FS50R12KE3BPSA1 FS50R12KE3BPSA1 Infineon Technologies Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c Description: IGBT MODULE 1200V 75A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 7 Stücke:
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1+133.02 EUR
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IPN65R1K5CE Infineon-IPN65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af6617b5b50
IPN65R1K5CE
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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MA15037577NDSA1
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT
Produkt ist nicht verfügbar
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IPW65R310CFD INFNS17578-1.pdf?t.download=true&u=5oefqw
IPW65R310CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Power Dissipation (Max): 104.2W (Tc)
auf Bestellung 10341 Stücke:
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AnzahlPrivatkunde
219+2.64 EUR
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IPW65R155CFD7XKSA1 Infineon-IPW65R155CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef402bf49c7
IPW65R155CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW65R125CFD7XKSA1 Infineon-IPW65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d74437bbc
IPW65R125CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 210 Stücke:
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AnzahlPrivatkunde
3+10.2 EUR
30+5.76 EUR
120+4.81 EUR
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IPW65R090CFD7XKSA1 Infineon-IPW65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d48c07bb6
IPW65R090CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 252 Stücke:
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AnzahlPrivatkunde
2+13.97 EUR
30+8.01 EUR
60+7.29 EUR
120+6.7 EUR
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IPW65R018CFD7XKSA1 Infineon-IPW65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179ccdfdb6202d1
IPW65R018CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
auf Bestellung 459 Stücke:
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1+35.35 EUR
30+22.06 EUR
60+20.48 EUR
120+19.15 EUR
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IPW65R110CFD7XKSA1 Infineon-IPW65R110CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d5e8e7bb9
IPW65R110CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 92 Stücke:
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AnzahlPrivatkunde
2+12.48 EUR
30+7.09 EUR
60+6.45 EUR
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IPW65R050CFD7AXKSA1 Infineon-IPW65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171c0167ea2084c
IPW65R050CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 174 Stücke:
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AnzahlPrivatkunde
2+20.55 EUR
30+12.23 EUR
60+11.25 EUR
120+10.4 EUR
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IPW65R029CFD7XKSA1 Infineon-IPW65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a0173093f56af4495
IPW65R029CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 110 Stücke:
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AnzahlPrivatkunde
1+25.97 EUR
30+15.76 EUR
60+14.54 EUR
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IPW65R15OCFDAFKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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IPW65F6048A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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TLV493DA2BWXTMA1 Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9
TLV493DA2BWXTMA1
Hersteller: Infineon Technologies
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLV493DA2BWXTMA1 Infineon-TLV493D-A2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178efd9e2c66db9
TLV493DA2BWXTMA1
Hersteller: Infineon Technologies
Description: XENSIV 3D MAGNETIC HALL SENSOR S
Part Status: Active
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 130nA
Output Type: I2C
Package / Case: 5-UFBGA, WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Sensing Range: ±160mT
Resolution: 12 b
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -20°C ~ 85°C (TJ)
Axis: X, Y, Z
Mounting Type: Surface Mount
auf Bestellung 1084 Stücke:
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AnzahlPrivatkunde
11+1.95 EUR
13+1.64 EUR
25+1.54 EUR
50+1.46 EUR
100+1.4 EUR
500+1.27 EUR
1000+1.23 EUR
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CYTVIIBE1MSKTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYT2B75CADES
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Platform: Arduino
Utilized IC / Part: CYT2B75CADES, TJA1057GTJ
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M4F
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Produkt ist nicht verfügbar
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CY241V08SXC-41
CY241V08SXC-41
Hersteller: Infineon Technologies
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-SOIC
Type: Clock Generator
Frequency - Max: 27MHz
auf Bestellung 5267 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
214+2.93 EUR
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IPA60R120P7E8191XKSA1 Infineon-IPA60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1a4c2ab65f51
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V TO220FP-3
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar
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BBY5305WH6327XTSA1554 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY5305WH6327XTSA1554
Hersteller: Infineon Technologies
Description: BBY53 - VARACTOR DIODE
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
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IPA028N04NM3SXKSA1 Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6
IPA028N04NM3SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.2 EUR
10+4.03 EUR
100+2.8 EUR
500+2.27 EUR
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TD250N12KOF
Hersteller: Infineon Technologies
Description: TD250N12 - THYRISTOR / DIODE MOD
auf Bestellung 247 Stücke:
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AnzahlPrivatkunde
3+299.04 EUR
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F165LMHAXP INFNS01617-1.pdf?t.download=true&u=5oefqw
F165LMHAXP
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100MQFP
Part Status: Obsolete
Supplier Device Package: P-MQFP-100
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Number of I/O: 77
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AnzahlPrivatkunde
23+28.49 EUR
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F3L300R12ME4B23BOSA1 Infineon-F3L300R12ME4_B23-DS-v03_01-EN.pdf?fileId=db3a304333b8a7ca0133fa6e9444448f
F3L300R12ME4B23BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1550 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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2SP0115T2A0FF300R12NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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2SP0115T2A0FF450R17NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SP0115T2A0FF300R17NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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T1410N06TOFXPSA1 Infineon-T1410N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd8012863561884530b
T1410N06TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 2500A DO-200AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2500 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 1490 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 23000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Produkt ist nicht verfügbar
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FS50R12N2T7B15BPSA2 Infineon-FS50R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4acd62e2c
FS50R12N2T7B15BPSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+110.86 EUR
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FP50R12N2T7PB11BPSA1 Infineon-FP50R12N2T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a40e402e1d
FP50R12N2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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FP50R12N2T7B11BPSA2 Infineon-FP50R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0afe65ee717c
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Current - Collector Cutoff (Max): 10 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
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PX7299EDQG005XUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR 16VQFN
Produkt ist nicht verfügbar
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PX7299EDQG005XUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR 16VQFN
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
125+4.71 EUR
Mindestbestellmenge: 125 Stücke
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IR3823AMTRPBFAUMA1 Infineon-IR3823AMTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a017707220c305f1c
IR3823AMTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A 19IQFN
Packaging: Tape & Reel (TR)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IR3823AMTRPBFAUMA1 Infineon-IR3823AMTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a017707220c305f1c
IR3823AMTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A 19IQFN
Packaging: Cut Tape (CT)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Discontinued at Digi-Key
auf Bestellung 3278 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.61 EUR
10+2.65 EUR
25+2.43 EUR
100+2.17 EUR
250+2.03 EUR
500+1.96 EUR
1000+1.9 EUR
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IR3447AMTRPBFAUMA1 Infineon-IR3447AMTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d46276fb756a01772c4a5fae1293
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 25A VIQFN-29
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2V
Voltage - Output (Max): 7.5V
Synchronous Rectifier: Yes
Supplier Device Package: PG-VIQFN-29
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 25A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 29-PowerVFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSZ021N04LS6ATMA1 Infineon-BSZ021N04LS6-DS-v02_01-EN.pdf?fileId=5546d462689a790c0168bd2c15304823
BSZ021N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 25A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.72 EUR
10+2.38 EUR
50+1.8 EUR
100+1.61 EUR
500+1.27 EUR
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CY8C4126AZQ-S423 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69
CY8C4126AZQ-S423
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 880 Stücke:
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AnzahlPrivatkunde
58+18.27 EUR
Mindestbestellmenge: 58 Stücke
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IR3565AMCP01TRP IR3565A_PB_v3.04_10-1-13.pdf
IR3565AMCP01TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 48VQFN
Number of Outputs: 6
Part Status: Obsolete
Clock Sync: No
Output Phases: 4
Serial Interfaces: I²C, PMBus, SMBus
Control Features: Enable, Power Good
Synchronous Rectifier: No
Supplier Device Package: PG-VQFN-48-900
Voltage - Supply (Vcc/Vdd): 3.3V
Topology: Buck
Frequency - Switching: 200kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: PWM
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 fundamentals-of-power-semiconductors
XMC1201Q040F0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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XMC1201Q040F0200ABXUMA1 fundamentals-of-power-semiconductors
XMC1201Q040F0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BSM35GD120DN2E3224BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: AG-ECONO2B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BSM35GD120DLCE3224BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 80 µA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Last Time Buy
Supplier Device Package: AG-ECONO2A
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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F1235R12KT4GBOSA1 F12-35R12KT4G_Rev2_2013-11-04.pdf
F1235R12KT4GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 210 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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TLS41205VCOREBOARDTOBO1 Infineon-TLS4120D0EPVxx_Core_module-UserManual-v01_00-EN.pdf?fileId=5546d4626e651a41016e6ecaaf77087f
TLS41205VCOREBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4120 5V CORE-BOARD
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+72.67 EUR
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FP100R12N2T7B11BPSA1 Infineon-FP100R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c80027ecd0180a8df007a1d22
FP100R12N2T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Current - Collector Cutoff (Max): 10 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 13 Stücke:
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AnzahlPrivatkunde
1+360.37 EUR
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FS100R12N2T7B15BPSA1 Infineon-FS100R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083afca973005
FS100R12N2T7B15BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Current - Collector Cutoff (Max): 10 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 14 Stücke:
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AnzahlPrivatkunde
1+168.37 EUR
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TLE4966V1GHTSA1 Infineon-TLE4966V-1G-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b512464fc0e06
TLE4966V1GHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TSOP6-6-9
Test Condition: 25°C
Supplier Device Package: PG-TSOP6-6-9
Current - Output (Max): 10mA
Sensing Range: -4.1mT Trip, 4.1mT Release
Technology: Hall Effect
Voltage - Supply: 3.5V ~ 32V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
Polarization: Either
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
14+1.51 EUR
Mindestbestellmenge: 12 Stücke
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TLE4955CXAMA1 Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56
TLE4955CXAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-53
Packaging: Cut Tape (CT)
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
7+3.37 EUR
10+3.21 EUR
25+3.02 EUR
50+2.9 EUR
100+2.78 EUR
500+2.55 EUR
Mindestbestellmenge: 6 Stücke
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TLE4955CXAMA1 Infineon-TLE4955C-DS-v01_01-EN.pdf?fileId=5546d46268554f4a01687f7b33504c56
TLE4955CXAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-53
Current - Supply (Max): 16mA
Sensing Range: -30mT Trip, 30mT Release
Technology: Hall Effect
Voltage - Supply: 4V ~ 20V
Operating Temperature: -40°C ~ 110°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-53
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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FP50R06KE3BPSA1 Infineon-FP50R06KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4332c9b5a83
FP50R06KE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 60A AG-ECONO2C
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+138.61 EUR
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DD241S12KHPSA1 DD241S.pdf
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 261A MOD
Current - Reverse Leakage @ Vr: 200 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 261A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+277.38 EUR
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TC397XP256F300SBCLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC397XP256F300SBCLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 2.75K x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Produkt ist nicht verfügbar
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TC399XX256F300SBCLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XP256F300SBCKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC399XP256F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 100x12b
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TC399XP256F300SBCLXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FS03MR12A6MA1LBBPSA1 Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011
FS03MR12A6MA1LBBPSA1
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Part Status: Active
Supplier Device Package: AG-HYBRIDD-2
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 400A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3669.91 EUR
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FS03MR12A6MA1LB Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-HYBRIDD
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: AG-HYBRIDD-2
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V
Current - Continuous Drain (Id) @ 25°C: 400A
Part Status: Active
Produkt ist nicht verfügbar
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IRF5810 irf5810.pdf
IRF5810
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.9A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tube
Produkt ist nicht verfügbar
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FP75R12N2T7PB11BPSA1 Infineon-FP75R12N2T7P_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a44b232e23
FP75R12N2T7PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Current - Collector Cutoff (Max): 14 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+212.25 EUR
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FS75R12N2T7B15BPSA2 Infineon-FS75R12N2T7_B15-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a4c9cf2e2f
FS75R12N2T7B15BPSA2
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Current - Collector Cutoff (Max): 14 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+136.36 EUR
15+106.06 EUR
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FS50R12KE3BPSA1 Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c
FS50R12KE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 75A AG-ECONO2B
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 270 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+133.02 EUR
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