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IPB110P06LMATMA1 IPB110P06LMATMA1 Infineon Technologies Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
auf Bestellung 281 Stücke:
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3+7.46 EUR
10+4.93 EUR
100+3.49 EUR
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AUIRFR9024NTRL AUIRFR9024NTRL Infineon Technologies INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY8CMBR3150-LQXIT Infineon Technologies Description: CAPSENSE EXPRESS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ042N04NS Infineon Technologies Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BC847BE6433 BC847BE6433 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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TLS850F2TAV50ATMA1 TLS850F2TAV50ATMA1 Infineon Technologies Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Fail
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPI65R310CFDXKSA1700 IPI65R310CFDXKSA1700 Infineon Technologies Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c Description: IPI65R310 - 650V AND 700V COOLMO
auf Bestellung 1500 Stücke:
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336+1.58 EUR
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IPI120N04S302AKSA1 IPI120N04S302AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S3_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba1cd4583&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
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94+5.06 EUR
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IPP120N04S3-02 IPP120N04S3-02 Infineon Technologies INFNS10669-1.pdf?t.download=true&u=5oefqw Description: PFET, 120A I(D), 40V, 0.0023OHM,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
auf Bestellung 30607 Stücke:
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94+5.33 EUR
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IPP60R360P7 IPP60R360P7 Infineon Technologies Infineon-IPP60R360P7-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a5be590fa3cc2 Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 Infineon Technologies IPL60R385CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d06e55327e3 Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 52754 Stücke:
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290+1.75 EUR
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IDK10G65C5XTMA2 IDK10G65C5XTMA2 Infineon Technologies Infineon-IDK10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbfb87cd4ed3 Description: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
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1000+2.4 EUR
2000+2.35 EUR
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BB844E6327HTSA1 BB844E6327HTSA1 Infineon Technologies INFNS15711-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 13pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 3.8
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20+0.9 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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TLE4976LHALA1 TLE4976LHALA1 Infineon Technologies TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7 Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188000 Stücke:
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591+0.79 EUR
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TLE4939 Infineon Technologies Infineon-TLE493D-A1B6-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801606f142b5c7fe5 Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Part Status: Active
auf Bestellung 26000 Stücke:
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670+0.76 EUR
Mindestbestellmenge: 670
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TLE4941-HT TLE4941-HT Infineon Technologies TLE4941%2CC%20Prod.%20Brief.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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183+2.76 EUR
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TLE4941-1-HT TLE4941-1-HT Infineon Technologies TLE4941%2CC%20Prod.%20Brief.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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171+2.97 EUR
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TLE4957CE6247HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAGNETIC SWITCH HALL EFF SSO-3
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176+3.14 EUR
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TLE4957C2E6847HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
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163+3.04 EUR
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TLE4957C-NE6747 TLE4957C-NE6747 Infineon Technologies Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 3000 Stücke:
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176+3.14 EUR
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TLE4957CB2E6747XTMA1 Infineon Technologies TLE4957Cx-2%20E6747.pdf Description: MAGNETIC SWITCH HALL EFF SSOM-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
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163+3.12 EUR
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TLE4957C-2 E6247 TLE4957C-2 E6247 Infineon Technologies Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 2780 Stücke:
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173+3.19 EUR
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TLE4941 Infineon Technologies Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334 Description: MAGNETIC SWITCH HALL EFFECT SENS
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145+3.59 EUR
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TLE4957CNE6747HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 61876 Stücke:
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140+3.53 EUR
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TLE4954CBXTMA1 Infineon Technologies INFNS30567-1.pdf?t.download=true&u=5oefqw Description: MAGNETIC SWITCH SPECIAL PURPOSE
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152+3.43 EUR
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TLE4957CE6747HAMA1 Infineon Technologies TLE4957C_PB_26092013.pdf?fileId=db3a3043414fd3ef014159b1f5a06bf1 Description: MAGNETIC SWITCH HALL EFF SSO-3
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152+3.65 EUR
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TLE4954CBE2XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC HALL EFFECT SENSOR SSOM-2
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TLE4983CSF47NHAMA1 Infineon Technologies Description: IC SPEED SENSOR MAGN PG-SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 26940 Stücke:
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TLE4983CHTE8547 TLE4983CHTE8547 Infineon Technologies Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 4000 Stücke:
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FF900R12ME7PB11BPSA1 FF900R12ME7PB11BPSA1 Infineon Technologies Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
auf Bestellung 12 Stücke:
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12+324.18 EUR
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AUIRFR6215TRL AUIRFR6215TRL Infineon Technologies IRSDS11569-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 12000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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IR3567AMMS02TRP IR3567AMMS02TRP Infineon Technologies IR3567A_PB_v3.04_10-1-13.pdf Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Produkt ist nicht verfügbar
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BAS4006WH6327XTSA1 BAS4006WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.091 EUR
9000+0.086 EUR
15000+0.08 EUR
Mindestbestellmenge: 3000
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BSS169IXTSA1 BSS169IXTSA1 Infineon Technologies Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
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BSS169IXTSA1 BSS169IXTSA1 Infineon Technologies Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
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IKW25N120CS7XKSA1 IKW25N120CS7XKSA1 Infineon Technologies Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3 Description: IGBT TRENCH FS 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/160ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 600V, 25A, 6Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
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AUIRLL024ZTR AUIRLL024ZTR Infineon Technologies INFN-S-A0002297050-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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AUIRLL024ZTR AUIRLL024ZTR Infineon Technologies INFN-S-A0002297050-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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FS10R12VT3BOMA1 FS10R12VT3BOMA1 Infineon Technologies Infineon-FS10R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431225b53a0 Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
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IRU3012CW IRU3012CW Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG BUCK 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF400R12KT3EHOSA1 FF400R12KT3EHOSA1 Infineon Technologies Infineon-FF400R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b97aa14b0008 Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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FF400R12KT3PEHOSA1 FF400R12KT3PEHOSA1 Infineon Technologies Infineon-FF400R12KT3P_E-DS-v02_00-EN.pdf?fileId=5546d46253f650570154517a278d6ae6 Description: IGBT MODULE 1200V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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CY7C1314KV18-250BZC CY7C1314KV18-250BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
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TLE42994GMXUMA3 TLE42994GMXUMA3 Infineon Technologies Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42994GMXUMA3 TLE42994GMXUMA3 Infineon Technologies Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
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IPB051NE8NG IPB051NE8NG Infineon Technologies INFNS16318-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPB051NE8NGATMA1 IPB051NE8NGATMA1 Infineon Technologies INFNS16318-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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BTN70301EPAXUMA1 BTN70301EPAXUMA1 Infineon Technologies Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194 Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Tape & Reel (TR)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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BTN70301EPAXUMA1 BTN70301EPAXUMA1 Infineon Technologies Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194 Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Cut Tape (CT)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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TLE7237SLXUMA2 Infineon Technologies Description: IC DRIVER SPI RELAY CTRL 24SSOP
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BTS612N1E3128ABUMA1 BTS612N1E3128ABUMA1 Infineon Technologies INFN-S-A0002952951-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Features: Auto Restart, Status Flag
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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TD61N1625KOFHPSA1 Infineon Technologies Description: SCR MODULE PB20-1
Packaging: Tray
Produkt ist nicht verfügbar
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TLV4961-3M TLV4961-3M Infineon Technologies Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf Description: TLV4961 - HALL SWITCH
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TLE4961-3K TLE4961-3K Infineon Technologies Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030 Description: TLE4961 - HALL SWITCH
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TLV49613TBXALA1 Infineon Technologies Infineon-Infineon-TLV4961-3TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3158d30b70 Description: MAGNETIC SWITCH LATCH TO92S
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TLE49613KXTSA1 TLE49613KXTSA1 Infineon Technologies Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030 Description: MAGNETIC SWITCH LATCH
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TLE49613MXTMA1 TLE49613MXTMA1 Infineon Technologies Infineon-TLE4961_3M-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc7ad91376ac Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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14+1.32 EUR
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IDL12G65C5XUMA2 IDL12G65C5XUMA2 Infineon Technologies Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28 Description: DIODE SIL CARB 650V 12A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
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BTS700201ESPXUMA1 BTS700201ESPXUMA1 Infineon Technologies Infineon-BTS70020-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850731539ad Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
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IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
IPB110P06LMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
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3+7.46 EUR
10+4.93 EUR
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
AUIRFR9024NTRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY8CMBR3150-LQXIT
Hersteller: Infineon Technologies
Description: CAPSENSE EXPRESS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSZ042N04NS
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
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BC847BE6433 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC847BE6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 34790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8689+0.048 EUR
Mindestbestellmenge: 8689
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TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
TLS850F2TAV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Fail
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPI65R310CFDXKSA1700 Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c
IPI65R310CFDXKSA1700
Hersteller: Infineon Technologies
Description: IPI65R310 - 650V AND 700V COOLMO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
336+1.58 EUR
Mindestbestellmenge: 336
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IPI120N04S302AKSA1 Infineon-IPP_B_I120N04S3_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba1cd4583&ack=t
IPI120N04S302AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
auf Bestellung 50600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.06 EUR
Mindestbestellmenge: 94
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IPP120N04S3-02 INFNS10669-1.pdf?t.download=true&u=5oefqw
IPP120N04S3-02
Hersteller: Infineon Technologies
Description: PFET, 120A I(D), 40V, 0.0023OHM,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
auf Bestellung 30607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.33 EUR
Mindestbestellmenge: 94
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IPP60R360P7 Infineon-IPP60R360P7-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a5be590fa3cc2
IPP60R360P7
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d06e55327e3
IPL60R385CPAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 52754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
290+1.75 EUR
Mindestbestellmenge: 290
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IDK10G65C5XTMA2 Infineon-IDK10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbfb87cd4ed3
IDK10G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.4 EUR
2000+2.35 EUR
Mindestbestellmenge: 1000
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BB844E6327HTSA1 INFNS15711-1.pdf?t.download=true&u=5oefqw
BB844E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 18V DUAL SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 13pF @ 8V, 1MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 3.8
auf Bestellung 14779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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TLE4976LHALA1 TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7
TLE4976LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
Packaging: Bulk
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
591+0.79 EUR
Mindestbestellmenge: 591
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TLE4939 Infineon-TLE493D-A1B6-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801606f142b5c7fe5
Hersteller: Infineon Technologies
Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Part Status: Active
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
670+0.76 EUR
Mindestbestellmenge: 670
Im Einkaufswagen  Stück im Wert von  UAH
TLE4941-HT TLE4941%2CC%20Prod.%20Brief.pdf
TLE4941-HT
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
auf Bestellung 34000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
183+2.76 EUR
Mindestbestellmenge: 183
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TLE4941-1-HT TLE4941%2CC%20Prod.%20Brief.pdf
TLE4941-1-HT
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
171+2.97 EUR
Mindestbestellmenge: 171
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TLE4957CE6247HAMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
auf Bestellung 34500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+3.14 EUR
Mindestbestellmenge: 176
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TLE4957C2E6847HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
163+3.04 EUR
Mindestbestellmenge: 163
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TLE4957C-NE6747
TLE4957C-NE6747
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+3.14 EUR
Mindestbestellmenge: 176
Im Einkaufswagen  Stück im Wert von  UAH
TLE4957CB2E6747XTMA1 TLE4957Cx-2%20E6747.pdf
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSOM-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
163+3.12 EUR
Mindestbestellmenge: 163
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TLE4957C-2 E6247
TLE4957C-2 E6247
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+3.19 EUR
Mindestbestellmenge: 173
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TLE4941 Infineon-TLE4941C-DS-v03_00-en.pdf?fileId=db3a30433899edae0138c3cd41cd0334
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
145+3.59 EUR
Mindestbestellmenge: 145
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TLE4957CNE6747HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 61876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
140+3.53 EUR
Mindestbestellmenge: 140
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TLE4954CBXTMA1 INFNS30567-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+3.43 EUR
Mindestbestellmenge: 152
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TLE4957CE6747HAMA1 TLE4957C_PB_26092013.pdf?fileId=db3a3043414fd3ef014159b1f5a06bf1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+3.65 EUR
Mindestbestellmenge: 152
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TLE4954CBE2XTMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSOM-2
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
135+4.09 EUR
Mindestbestellmenge: 135
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TLE4983CSF47NHAMA1
Hersteller: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 26940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
119+4.15 EUR
Mindestbestellmenge: 119
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TLE4983CHTE8547
TLE4983CHTE8547
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.43 EUR
Mindestbestellmenge: 94
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FF900R12ME7PB11BPSA1 Infineon-FF900R12ME7P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f0173b496936b4156
FF900R12ME7PB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+345.01 EUR
12+324.18 EUR
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AUIRFR6215TRL IRSDS11569-1.pdf?t.download=true&u=5oefqw
AUIRFR6215TRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAS4007WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4007WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IR3567AMMS02TRP IR3567A_PB_v3.04_10-1-13.pdf
IR3567AMMS02TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Produkt ist nicht verfügbar
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BAS4006WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4006WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.091 EUR
9000+0.086 EUR
15000+0.08 EUR
Mindestbestellmenge: 3000
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BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
BSS169IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
BSS169IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 4734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
102+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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IKW25N120CS7XKSA1 Infineon-IKW25N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97da3d005a3
IKW25N120CS7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/160ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 600V, 25A, 6Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
auf Bestellung 237 Stücke:
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Anzahl Preis
2+10.52 EUR
30+6.03 EUR
120+5.05 EUR
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AUIRLL024ZTR INFN-S-A0002297050-1.pdf?t.download=true&u=5oefqw
AUIRLL024ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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AUIRLL024ZTR INFN-S-A0002297050-1.pdf?t.download=true&u=5oefqw
AUIRLL024ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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FS10R12VT3BOMA1 Infineon-FS10R12VT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431225b53a0
FS10R12VT3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
auf Bestellung 118 Stücke:
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Anzahl Preis
16+32.36 EUR
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IRU3012CW fundamentals-of-power-semiconductors
IRU3012CW
Hersteller: Infineon Technologies
Description: IC REG BUCK 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF400R12KT3EHOSA1 Infineon-FF400R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b97aa14b0008
FF400R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 193 Stücke:
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Anzahl Preis
2+251.08 EUR
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FF400R12KT3PEHOSA1 Infineon-FF400R12KT3P_E-DS-v02_00-EN.pdf?fileId=5546d46253f650570154517a278d6ae6
FF400R12KT3PEHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 80 Stücke:
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Anzahl Preis
2+259.49 EUR
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CY7C1314KV18-250BZC download
CY7C1314KV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
auf Bestellung 116 Stücke:
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Anzahl Preis
2+15.77 EUR
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TLE42994GMXUMA3 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994GMXUMA3
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.45 EUR
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TLE42994GMXUMA3 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994GMXUMA3
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4765 Stücke:
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Anzahl Preis
6+3.17 EUR
10+2.34 EUR
25+2.13 EUR
100+1.9 EUR
250+1.79 EUR
500+1.72 EUR
1000+1.67 EUR
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IPB051NE8NG INFNS16318-1.pdf?t.download=true&u=5oefqw
IPB051NE8NG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 775 Stücke:
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Anzahl Preis
198+2.52 EUR
Mindestbestellmenge: 198
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IPB051NE8NGATMA1 INFNS16318-1.pdf?t.download=true&u=5oefqw
IPB051NE8NGATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTN70301EPAXUMA1 Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194
BTN70301EPAXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Tape & Reel (TR)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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BTN70301EPAXUMA1 Infineon-BTN7030-1EPA-DataSheet-v01_01-EN.pdf?fileId=5546d462749a7c2d0174b68220d93194
BTN70301EPAXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Cut Tape (CT)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
auf Bestellung 1897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+3.13 EUR
25+2.87 EUR
100+2.57 EUR
250+2.43 EUR
500+2.35 EUR
1000+2.28 EUR
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TLE7237SLXUMA2
Hersteller: Infineon Technologies
Description: IC DRIVER SPI RELAY CTRL 24SSOP
Produkt ist nicht verfügbar
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BTS612N1E3128ABUMA1 INFN-S-A0002952951-1.pdf?t.download=true&u=5oefqw
BTS612N1E3128ABUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Features: Auto Restart, Status Flag
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TD61N1625KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE PB20-1
Packaging: Tray
Produkt ist nicht verfügbar
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TLV4961-3M Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf
TLV4961-3M
Hersteller: Infineon Technologies
Description: TLV4961 - HALL SWITCH
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1508+0.33 EUR
Mindestbestellmenge: 1508
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TLE4961-3K Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030
TLE4961-3K
Hersteller: Infineon Technologies
Description: TLE4961 - HALL SWITCH
auf Bestellung 333000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1016+0.5 EUR
Mindestbestellmenge: 1016
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TLV49613TBXALA1 Infineon-Infineon-TLV4961-3TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3158d30b70
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TO92S
auf Bestellung 34000 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE49613KXTSA1 Infineon-TLE4961_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b601397247ed8d0030
TLE49613KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH
Produkt ist nicht verfügbar
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TLE49613MXTMA1 Infineon-TLE4961_3M-DS-v01_00-en.pdf?fileId=db3a304338ec6d390138fc7ad91376ac
TLE49613MXTMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+1 EUR
25+0.86 EUR
50+0.83 EUR
100+0.71 EUR
500+0.62 EUR
1000+0.54 EUR
5000+0.48 EUR
Mindestbestellmenge: 14
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IDL12G65C5XUMA2 Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28
IDL12G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Produkt ist nicht verfügbar
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BTS700201ESPXUMA1 Infineon-BTS70020-1ESP-DataSheet-v01_10-EN.pdf?fileId=5546d462758f5bd101759850731539ad
BTS700201ESPXUMA1
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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