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PEF22810TV2.1 Infineon Technologies Description: IC LINE DRIVER
Packaging: Bulk
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PEB22811HV1.3 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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PEF22812FV2.2 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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PEF22818FV1.1 Infineon Technologies Description: IC TRANS SINGLE PORT DIGITAL
Packaging: Bulk
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PEF22812ELV2.2 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 3140 Stücke:
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KP214E3022XTMA1 Infineon Technologies Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKWH20N65WR6XKSA1 IKWH20N65WR6XKSA1 Infineon Technologies Infineon-IKWH20N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce6381926fd1 Description: IGBT TRENCH FS 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
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IKWH70N65WR6XKSA1 IKWH70N65WR6XKSA1 Infineon Technologies Infineon-IKWH70N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63d1626fe1 Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
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3+6.81 EUR
30+3.79 EUR
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TLI4971A050T5UE0001XUMA1 TLI4971A050T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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3+6.27 EUR
5+5.61 EUR
10+5.37 EUR
25+5.08 EUR
50+4.88 EUR
100+4.7 EUR
500+4.33 EUR
1000+4.3 EUR
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BSC152N10NSFG BSC152N10NSFG Infineon Technologies INFNS16198-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 72µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
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BSC118N10NSG BSC118N10NSG Infineon Technologies INFNS16721-1.pdf?t.download=true&u=5oefqw Description: BSC118N10 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Produkt ist nicht verfügbar
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FP10R12W1T7PB3BPSA1 FP10R12W1T7PB3BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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FP10R12YT3BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FP10R12YT3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FP25R12KT4_B15 Infineon Technologies INFNS28465-1.pdf?t.download=true&u=5oefqw Description: FP25R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-5-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 150 Stücke:
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6+94.43 EUR
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FP25R12W2T7B11BPSA1 FP25R12W2T7B11BPSA1 Infineon Technologies Infineon-FP25R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f1861a4f72e6 Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
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1+67.88 EUR
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FP25R12KT3BPSA1 FP25R12KT3BPSA1 Infineon Technologies Infineon-FP25R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316c90543e Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
auf Bestellung 7 Stücke:
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1+109.45 EUR
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FP25R12KS4CBOSA1 FP25R12KS4CBOSA1 Infineon Technologies Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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IRGC75B60KB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 BSZ0704LSATMA1 Infineon Technologies Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424 Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 BSZ0704LSATMA1 Infineon Technologies Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424 Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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TC1766192F80HLBDKXUMA1 TC1766192F80HLBDKXUMA1 Infineon Technologies Infineon-TC1766-DS-v01_00-en.pdf?folderId=db3a304412b407950112b409ae7c0343&fileId=db3a304313553140011368a9b40e0224&ack=t Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Discontinued at Digi-Key
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSO072N03S BSO072N03S Infineon Technologies BSO072N03S.pdf Description: MOSFET N-CH 30V 12A 8DSO
auf Bestellung 2183 Stücke:
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626+0.81 EUR
Mindestbestellmenge: 626
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TLE4263GMXUMA2 TLE4263GMXUMA2 Infineon Technologies Infineon-TLE4263-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2160 Stücke:
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6+3.33 EUR
10+2.45 EUR
25+2.24 EUR
100+2 EUR
250+1.89 EUR
500+1.82 EUR
1000+1.76 EUR
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TLE94112ESRPIHATTOBO1 TLE94112ESRPIHATTOBO1 Infineon Technologies Infineon-DC-Motor-Shield-with-TLE94112-User-Manual-UserManual-v01_00-EN.pdf?fileId=5546d46277fc743901783fec6bf220b7 Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Bulk
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (12)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 3V ~ 5.5V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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1+59.63 EUR
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IR21771SPBF-INF IR21771SPBF-INF Infineon Technologies Description: IC CURRENT SENSE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 8V ~ 20V
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 19800 Stücke:
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64+7.61 EUR
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IR2172PBF IR2172PBF Infineon Technologies IR2171%2C2172%2CS.pdf Description: IC CURRENT SENSE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-PDIP
Produkt ist nicht verfügbar
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IR21726S IR21726S Infineon Technologies ir2171.pdf Description: IC CURRENT SENSE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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KITXMC4400DCV1TOBO1 KITXMC4400DCV1TOBO1 Infineon Technologies Board_Users_Manual_DriveCard_XMC4400_R1%200.pdf?fileId=db3a3043427ac3e201427f46ec9b2626 Description: EVAL KIT XMC4400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4400
Part Status: Active
auf Bestellung 2 Stücke:
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1+228.91 EUR
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IPT60R055CFD7XTMA1 IPT60R055CFD7XTMA1 Infineon Technologies Infineon-IPT60R055CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df33482f3176 Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R055CFD7XTMA1 IPT60R055CFD7XTMA1 Infineon Technologies Infineon-IPT60R055CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df33482f3176 Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1746 Stücke:
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2+10.61 EUR
10+7.16 EUR
100+5.33 EUR
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BGS22WL10E6327XTSA1 BGS22WL10E6327XTSA1 Infineon Technologies BGS22WL10.pdf Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2.69GHz
Isolation: 24dB
Supplier Device Package: TSLP-10-1
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BGS22WL10E6327XTSA1020 Infineon Technologies INFNS27432-1.pdf?t.download=true&u=5oefqw Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Packaging: Bulk
Features: Single/Dual Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Insertion Loss: 0.48dB
Frequency Range: 100MHz ~ 3GHz
P1dB: 34dBm
Test Frequency: 2.69GHz
Isolation: 28dB
Supplier Device Package: TSLP-10-1
Part Status: Active
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PMA7110XUMA1 PMA7110XUMA1 Infineon Technologies PMA71xx.pdf Description: IC RF TXRX+MCU ISM<1GHZ 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
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BTT60501ERAXUMA1 BTT60501ERAXUMA1 Infineon Technologies Infineon-BTT6050-1ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa5b7a0d8a Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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FF200R17KE3 Infineon Technologies INFNS28360-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Description: INSULATED GATE BIPOLAR TRANSISTO
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FF200R12MT4 Infineon Technologies INFNS28359-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-2-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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FF200R17KE3S4HOSA1 FF200R17KE3S4HOSA1 Infineon Technologies Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018 Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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CY8CLED164-28PVXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
Packaging: Bulk
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
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SIGC12T60NCX1SA1 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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S29GL01GT11TFV010 S29GL01GT11TFV010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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2EDL8023GXUMA1 2EDL8023GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8023GXUMA1 2EDL8023GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8024GXUMA1 2EDL8024GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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FD600R17KE3B2NOSA1 FD600R17KE3B2NOSA1 Infineon Technologies Infineon-FD600R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43101dd5308 Description: IGBT MODULE 1700V 4300W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4300 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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IRFR13N15DTRPBF IRFR13N15DTRPBF Infineon Technologies irfr13n15dpbf.pdf?fileId=5546d462533600a40153562d4bbc205a Description: MOSFET N-CH 150V 14A DPAK
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IPP129N10NF2SAKMA1 IPP129N10NF2SAKMA1 Infineon Technologies Infineon-IPP129N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66e3e00005 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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FF300R07ME4B11BPSA1 FF300R07ME4B11BPSA1 Infineon Technologies Infineon-FF300R07ME4_B11-DataSheet-v03_01-EN.pdf?fileId=db3a304335113a6301351a6442bd624d Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 390 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 13 Stücke:
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IPD90N08S405ATMA1 IPD90N08S405ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6942 Stücke:
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5+3.54 EUR
10+2.65 EUR
100+1.83 EUR
500+1.55 EUR
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IQE013N04LM6ATMA1 IQE013N04LM6ATMA1 Infineon Technologies Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Description: MOSFET N-CH 40V 31A/205A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 7762 Stücke:
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IQE013N04LM6CGATMA1 IQE013N04LM6CGATMA1 Infineon Technologies infineon-iqe013n04lm6cg-datasheet-en.pdf?fileId=5546d46272e49d2a01735298d3705b09 Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
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IQE013N04LM6CGATMA1 IQE013N04LM6CGATMA1 Infineon Technologies infineon-iqe013n04lm6cg-datasheet-en.pdf?fileId=5546d46272e49d2a01735298d3705b09 Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
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BSZ063N04LS6ATMA1 BSZ063N04LS6ATMA1 Infineon Technologies Infineon-BSZ063N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd2c3cd94829 Description: MOSFET N-CH 40V 15A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
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BSZ063N04LS6ATMA1 BSZ063N04LS6ATMA1 Infineon Technologies Infineon-BSZ063N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd2c3cd94829 Description: MOSFET N-CH 40V 15A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 2971 Stücke:
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FP15R12KE3BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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TLE5009A16E1210XUMA1 TLE5009A16E1210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE5009A16E1210XUMA1 TLE5009A16E1210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2589 Stücke:
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3+5.97 EUR
5+5.34 EUR
10+5.1 EUR
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50+4.64 EUR
100+4.46 EUR
500+4.12 EUR
1000+3.99 EUR
Mindestbestellmenge: 3
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IPB80P03P4L04ATMA2 IPB80P03P4L04ATMA2 Infineon Technologies Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7 Description: MOSFET P-CH 30V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80P04P4L04ATMA2 IPB80P04P4L04ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f783241fb2e2a Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.21 EUR
Mindestbestellmenge: 1000
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IPB80P04P4L04ATMA2 IPB80P04P4L04ATMA2 Infineon Technologies Infineon-IPP_B_I80P04P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f783241fb2e2a Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 7675 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
10+3.98 EUR
100+3.22 EUR
500+2.86 EUR
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PEF22810TV2.1
Hersteller: Infineon Technologies
Description: IC LINE DRIVER
Packaging: Bulk
auf Bestellung 43425 Stücke:
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Anzahl Preis
222+2.25 EUR
Mindestbestellmenge: 222
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PEB22811HV1.3
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 2453 Stücke:
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Anzahl Preis
79+6.38 EUR
Mindestbestellmenge: 79
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PEF22812FV2.2
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 378 Stücke:
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Anzahl Preis
23+21.81 EUR
Mindestbestellmenge: 23
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PEF22818FV1.1
Hersteller: Infineon Technologies
Description: IC TRANS SINGLE PORT DIGITAL
Packaging: Bulk
auf Bestellung 28508 Stücke:
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Anzahl Preis
21+24.21 EUR
Mindestbestellmenge: 21
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PEF22812ELV2.2
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 3140 Stücke:
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Anzahl Preis
17+29.44 EUR
Mindestbestellmenge: 17
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KP214E3022XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKWH20N65WR6XKSA1 Infineon-IKWH20N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce6381926fd1
IKWH20N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
30+2.24 EUR
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IKWH70N65WR6XKSA1 Infineon-IKWH70N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63d1626fe1
IKWH70N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.81 EUR
30+3.79 EUR
120+3.12 EUR
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TLI4971A050T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A050T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
5+5.61 EUR
10+5.37 EUR
25+5.08 EUR
50+4.88 EUR
100+4.7 EUR
500+4.33 EUR
1000+4.3 EUR
Mindestbestellmenge: 3
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BSC152N10NSFG INFNS16198-1.pdf?t.download=true&u=5oefqw
BSC152N10NSFG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 72µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 9249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
204+2.28 EUR
Mindestbestellmenge: 204
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BSC118N10NSG INFNS16721-1.pdf?t.download=true&u=5oefqw
BSC118N10NSG
Hersteller: Infineon Technologies
Description: BSC118N10 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Produkt ist nicht verfügbar
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FP10R12W1T7PB3BPSA1
FP10R12W1T7PB3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.13 EUR
10+71.39 EUR
30+67.14 EUR
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FP10R12YT3BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FP10R12YT3B4BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FP25R12KT4_B15 INFNS28465-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-5-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+94.43 EUR
Mindestbestellmenge: 6
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FP25R12W2T7B11BPSA1 Infineon-FP25R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f1861a4f72e6
FP25R12W2T7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.88 EUR
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FP25R12KT3BPSA1 Infineon-FP25R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316c90543e
FP25R12KT3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+109.45 EUR
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FP25R12KS4CBOSA1 Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d
FP25R12KS4CBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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IRGC75B60KB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424
BSZ0704LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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BSZ0704LSATMA1 Infineon-BSZ0704LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b9036f31424
BSZ0704LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Produkt ist nicht verfügbar
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TC1766192F80HLBDKXUMA1 Infineon-TC1766-DS-v01_00-en.pdf?folderId=db3a304412b407950112b409ae7c0343&fileId=db3a304313553140011368a9b40e0224&ack=t
TC1766192F80HLBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Discontinued at Digi-Key
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSO072N03S BSO072N03S.pdf
BSO072N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
626+0.81 EUR
Mindestbestellmenge: 626
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TLE4263GMXUMA2 Infineon-TLE4263-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.45 EUR
25+2.24 EUR
100+2 EUR
250+1.89 EUR
500+1.82 EUR
1000+1.76 EUR
Mindestbestellmenge: 6
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TLE94112ESRPIHATTOBO1 Infineon-DC-Motor-Shield-with-TLE94112-User-Manual-UserManual-v01_00-EN.pdf?fileId=5546d46277fc743901783fec6bf220b7
TLE94112ESRPIHATTOBO1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Bulk
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (12)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 3V ~ 5.5V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.63 EUR
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IR21771SPBF-INF
IR21771SPBF-INF
Hersteller: Infineon Technologies
Description: IC CURRENT SENSE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 8V ~ 20V
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 19800 Stücke:
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64+7.61 EUR
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IR2172PBF IR2171%2C2172%2CS.pdf
IR2172PBF
Hersteller: Infineon Technologies
Description: IC CURRENT SENSE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-PDIP
Produkt ist nicht verfügbar
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IR21726S ir2171.pdf
IR21726S
Hersteller: Infineon Technologies
Description: IC CURRENT SENSE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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KITXMC4400DCV1TOBO1 Board_Users_Manual_DriveCard_XMC4400_R1%200.pdf?fileId=db3a3043427ac3e201427f46ec9b2626
KITXMC4400DCV1TOBO1
Hersteller: Infineon Technologies
Description: EVAL KIT XMC4400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4400
Part Status: Active
auf Bestellung 2 Stücke:
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IPT60R055CFD7XTMA1 Infineon-IPT60R055CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df33482f3176
IPT60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R055CFD7XTMA1 Infineon-IPT60R055CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df33482f3176
IPT60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1746 Stücke:
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Anzahl Preis
2+10.61 EUR
10+7.16 EUR
100+5.33 EUR
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BGS22WL10E6327XTSA1 BGS22WL10.pdf
BGS22WL10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2.69GHz
Isolation: 24dB
Supplier Device Package: TSLP-10-1
auf Bestellung 9490528 Stücke:
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Anzahl Preis
945+0.48 EUR
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BGS22WL10E6327XTSA1020 INFNS27432-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Packaging: Bulk
Features: Single/Dual Line Control
Package / Case: 10-XFQFN
Impedance: 50Ohm
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Insertion Loss: 0.48dB
Frequency Range: 100MHz ~ 3GHz
P1dB: 34dBm
Test Frequency: 2.69GHz
Isolation: 28dB
Supplier Device Package: TSLP-10-1
Part Status: Active
auf Bestellung 2422 Stücke:
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Anzahl Preis
1519+0.35 EUR
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PMA7110XUMA1 PMA71xx.pdf
PMA7110XUMA1
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM<1GHZ 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
auf Bestellung 3003 Stücke:
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Anzahl Preis
208+2.16 EUR
Mindestbestellmenge: 208
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BTT60501ERAXUMA1 Infineon-BTT6050-1ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa5b7a0d8a
BTT60501ERAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3092 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+2.96 EUR
25+2.7 EUR
100+2.42 EUR
250+2.29 EUR
500+2.21 EUR
1000+2.14 EUR
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FF200R17KE3 INFNS28360-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
auf Bestellung 40 Stücke:
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FF200R12MT4 INFNS28359-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-2-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
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FF200R17KE3S4HOSA1 Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018
FF200R17KE3S4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 8 Stücke:
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Anzahl Preis
1+197.58 EUR
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CY8CLED164-28PVXI
Hersteller: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
Packaging: Bulk
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
auf Bestellung 1626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+12.47 EUR
Mindestbestellmenge: 40
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SIGC12T60NCX1SA1 SIGC12T60NC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Produkt ist nicht verfügbar
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S29GL01GT11TFV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT11TFV010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDL8023GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8023GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDL8023GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8023GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10023 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
10+1.77 EUR
25+1.61 EUR
100+1.43 EUR
250+1.34 EUR
500+1.29 EUR
1000+1.25 EUR
2500+1.2 EUR
Mindestbestellmenge: 8
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2EDL8024GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8024GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1233 Stücke:
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Anzahl Preis
10+1.8 EUR
14+1.3 EUR
25+1.18 EUR
100+1.04 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.9 EUR
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FD600R17KE3B2NOSA1 Infineon-FD600R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43101dd5308
FD600R17KE3B2NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4300W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4300 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 110 Stücke:
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Anzahl Preis
1+1665.59 EUR
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IRFR13N15DTRPBF irfr13n15dpbf.pdf?fileId=5546d462533600a40153562d4bbc205a
IRFR13N15DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 14A DPAK
Produkt ist nicht verfügbar
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IPP129N10NF2SAKMA1 Infineon-IPP129N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66e3e00005
IPP129N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 1037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
50+1.35 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.87 EUR
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FF300R07ME4B11BPSA1 Infineon-FF300R07ME4_B11-DataSheet-v03_01-EN.pdf?fileId=db3a304335113a6301351a6442bd624d
FF300R07ME4B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 390 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 13 Stücke:
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Anzahl Preis
1+172.59 EUR
10+143.45 EUR
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IPD90N08S405ATMA1 fundamentals-of-power-semiconductors
IPD90N08S405ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.65 EUR
100+1.83 EUR
500+1.55 EUR
1000+1.43 EUR
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IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
IQE013N04LM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A/205A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 7762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+2.81 EUR
100+1.93 EUR
500+1.59 EUR
Mindestbestellmenge: 5
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IQE013N04LM6CGATMA1 infineon-iqe013n04lm6cg-datasheet-en.pdf?fileId=5546d46272e49d2a01735298d3705b09
IQE013N04LM6CGATMA1
Hersteller: Infineon Technologies
Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Produkt ist nicht verfügbar
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IQE013N04LM6CGATMA1 infineon-iqe013n04lm6cg-datasheet-en.pdf?fileId=5546d46272e49d2a01735298d3705b09
IQE013N04LM6CGATMA1
Hersteller: Infineon Technologies
Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 2885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+2.81 EUR
100+1.93 EUR
500+1.59 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSZ063N04LS6ATMA1 Infineon-BSZ063N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd2c3cd94829
BSZ063N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 15A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ063N04LS6ATMA1 Infineon-BSZ063N04LS6-DS-v02_00-EN.pdf?fileId=5546d462689a790c0168bd2c3cd94829
BSZ063N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 15A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
auf Bestellung 2971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
19+0.95 EUR
25+0.9 EUR
100+0.82 EUR
250+0.78 EUR
500+0.75 EUR
1000+0.71 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
FP15R12KE3BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5009A16E1210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5009A16E1210XUMA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5009A16E1210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5009A16E1210XUMA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
5+5.34 EUR
10+5.1 EUR
25+4.83 EUR
50+4.64 EUR
100+4.46 EUR
500+4.12 EUR
1000+3.99 EUR
Mindestbestellmenge: 3
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IPB80P03P4L04ATMA2 Infineon-I80P03P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07e95eb827d7
IPB80P03P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2V @ 253µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80P04P4L04ATMA2 Infineon-IPP_B_I80P04P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f783241fb2e2a
IPB80P04P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.21 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB80P04P4L04ATMA2 Infineon-IPP_B_I80P04P4L_04-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f783241fb2e2a
IPB80P04P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
auf Bestellung 7675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.98 EUR
100+3.22 EUR
500+2.86 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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