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FF800R12KL4CNOSA1 Infineon Technologies FF800R12KL4C_Rev3.1_2013-10-02.pdf Description: IGBT MOD 1200V 1250A AG-PRIME2
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1250 A
Part Status: Obsolete
Supplier Device Package: AG-PRIME2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: 2 Independent
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BSZ011NE2LS5IATMA1 BSZ011NE2LS5IATMA1 Infineon Technologies Infineon-BSZ011NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6f66852a4 Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
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FF200R33KF2CNOSA1 FF200R33KF2CNOSA1 Infineon Technologies Infineon-FF200R33KF2C-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b430ea405267 Description: IGBT MOD 3300V 330A 2200W
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2200 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 330 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BBY55-03WE6327 BBY55-03WE6327 Infineon Technologies INFNS15716-1.pdf?t.download=true&u=5oefqw Description: BBY55 - VARACTOR DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
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BBY55-02WH6327 BBY55-02WH6327 Infineon Technologies INFNS15716-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
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FD1000R17IE4BOSA2 FD1000R17IE4BOSA2 Infineon Technologies Infineon-FD1000R17IE4-DS-v02_01-en_de.pdf?fileId=db3a30431ff9881501201f20782f4bd1 Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FD1000R33HL3KBPSA1 FD1000R33HL3KBPSA1 Infineon Technologies Infineon-FD1000R33HL3_K-DS-v03_01-en_de.pdf?fileId=db3a3043407895a701407b6e982f2815 Description: IGBT MOD 3300V 1000A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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FD1000R17IE4DB2BOSA1 Infineon Technologies FD1000R17IE4D_B2.pdf Description: IGBT MOD 1700V 1390A 6250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: PFET, 21A I(D), 150V, 0.053OHM,
Produkt ist nicht verfügbar
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TT425N16KOFHPSA3 TT425N16KOFHPSA3 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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DD600N16KAHPSA1 DD600N16KAHPSA1 Infineon Technologies DD600N_Rev1_06-05-03.pdf Description: DIODE MOD GP 1600V 600A BGPB60
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Produkt ist nicht verfügbar
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TLE9250XLEXUMA1 TLE9250XLEXUMA1 Infineon Technologies Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE9250XLEXUMA1 TLE9250XLEXUMA1 Infineon Technologies Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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CY8C20666A-24LTXI CY8C20666A-24LTXI Infineon Technologies download Description: MCU 32K FLASH 2K SRAM 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Obsolete
Supplier Device Package: 48-QFN (7x7)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I²C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
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CY8C3666AXI-202 CY8C3666AXI-202 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
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CY8C20666AS-24LQXI CY8C20666AS-24LQXI Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE 32KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-QFN (6x6)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-UFQFN Exposed Pad
Packaging: Tray
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TLI493DW2BWA3XTMA1 TLI493DW2BWA3XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLI493DW2BWA0XTSA1 TLI493DW2BWA0XTSA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
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TLI493DW2BWA0XTMA1 TLI493DW2BWA0XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Test Condition: -40°C ~ 125°C
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Programmable
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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TLI493DW2BWA1XTMA1 TLI493DW2BWA1XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
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CY24293ZXCT CY24293ZXCT Infineon Technologies download Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
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BC857B E6327 BC857B E6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BCR119WE6327 BCR119WE6327 Infineon Technologies Infineon-BCR119SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a37301143f643b380286 Description: TRANS PREBIAS
Packaging: Bulk
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BCR119WH6327 Infineon Technologies INFNS17179-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
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BCR191E6327 BCR191E6327 Infineon Technologies INFNS11718-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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TUA 6036 T TUA 6036 T Infineon Technologies TUA6034_36_v251_110106.pdf Description: IC VIDEO TUNER 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-TSSOP-38
Control Interface: I2C
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D850N36TXPSA1 D850N36TXPSA1 Infineon Technologies Infineon-D850N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a18c6d04782 Description: DIODE GEN PURP 3.6KV 850A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 850A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
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D740N36TXPSA1 D740N36TXPSA1 Infineon Technologies D740N.pdf Description: DIODE GEN PURP 3.6KV 750A
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D270N36TXPSA1 D270N36TXPSA1 Infineon Technologies D270N.pdf Description: DIODE GEN PURP 3.6KV 270A
Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io): 270A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
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ASP1212-N20NT ASP1212-N20NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ASP1212-N50NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ASP1212-N60DT Infineon Technologies Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ASP1212-N60NT ASP1212-N60NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAR88-02LRHE6327 BAR88-02LRHE6327 Infineon Technologies INFNS15409-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 80V V(BR)
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 2ED2101S06FXUMA1 Infineon Technologies Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 2ED2101S06FXUMA1 Infineon Technologies Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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25+1.4 EUR
100+1.25 EUR
250+1.17 EUR
500+1.12 EUR
1000+1.08 EUR
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S25FS064SAGMFN010 S25FS064SAGMFN010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
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S25FL116K0XMFN013 S25FL116K0XMFN013 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL116K0XMFN010 S25FL116K0XMFN010 Infineon Technologies S25FL116K0XMFN010_Web.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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S25FL116K0XMFN011 S25FL116K0XMFN011 Infineon Technologies S25FL116K0XMFN011_Web.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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ILD1151 ILD1151 Infineon Technologies INFNS19025-1.pdf?t.download=true&u=5oefqw Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
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PX8244HDMG008XTMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: LED PX8244HDMG008XTMA1
Packaging: Bulk
auf Bestellung 8000 Stücke:
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IPP90R500C3 IPP90R500C3 Infineon Technologies IPP90R500C3_Rev1.0_7-29-08.pdf Description: MOSFET N-CH 900V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB60R055CFD7ATMA1 IPB60R055CFD7ATMA1 Infineon Technologies Infineon-IPB60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2eb02953007 Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
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1000+6.54 EUR
2000+6.2 EUR
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IPB60R055CFD7ATMA1 IPB60R055CFD7ATMA1 Infineon Technologies Infineon-IPB60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2eb02953007 Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
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IPB60R070CFD7ATMA1 IPB60R070CFD7ATMA1 Infineon Technologies Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30 Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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1000+7.53 EUR
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30 Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2998 Stücke:
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10+12.22 EUR
100+9.22 EUR
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IPD60R750E6BTMA1 IPD60R750E6BTMA1 Infineon Technologies Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08 Description: MOSFET N-CH 600V 5.7A TO252
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IPD60R380E6ATMA2 IPD60R380E6ATMA2 Infineon Technologies Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G IPA126N10N3G Infineon Technologies INFNS27818-1.pdf?t.download=true&u=5oefqw Description: 35A, 100V, 0.0126OHM, N-CHANNEL
auf Bestellung 1450 Stücke:
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CHL8328-35CRT CHL8328-35CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 Infineon Technologies Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
auf Bestellung 771 Stücke:
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5+4.33 EUR
10+3.21 EUR
25+2.93 EUR
100+2.63 EUR
250+2.48 EUR
500+2.4 EUR
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IPC302N15N3X7SA1 Infineon Technologies dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 FZ400R17KE3S4HOSA1 Infineon Technologies Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6 Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 363 Stücke:
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3+234.3 EUR
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FS225R12KE4BOSA1 FS225R12KE4BOSA1 Infineon Technologies Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6 Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 1561 Stücke:
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FD400R07PE4RB6BOSA1 Infineon Technologies Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4 Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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2+301.64 EUR
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FF800R12KL4CNOSA1 FF800R12KL4C_Rev3.1_2013-10-02.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1250A AG-PRIME2
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1250 A
Part Status: Obsolete
Supplier Device Package: AG-PRIME2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: 2 Independent
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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1+1717.16 EUR
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BSZ011NE2LS5IATMA1 Infineon-BSZ011NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6f66852a4
BSZ011NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.9 EUR
Mindestbestellmenge: 5000 Stücke
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FF200R33KF2CNOSA1 Infineon-FF200R33KF2C-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b430ea405267
FF200R33KF2CNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 330A 2200W
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2200 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 330 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1 Stücke:
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1+2535.54 EUR
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BBY55-03WE6327 INFNS15716-1.pdf?t.download=true&u=5oefqw
BBY55-03WE6327
Hersteller: Infineon Technologies
Description: BBY55 - VARACTOR DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
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2206+0.27 EUR
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BBY55-02WH6327 INFNS15716-1.pdf?t.download=true&u=5oefqw
BBY55-02WH6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
Produkt ist nicht verfügbar
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FD1000R17IE4BOSA2 Infineon-FD1000R17IE4-DS-v02_01-en_de.pdf?fileId=db3a30431ff9881501201f20782f4bd1
FD1000R17IE4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 222 Stücke:
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1+1017.25 EUR
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FD1000R33HL3KBPSA1 Infineon-FD1000R33HL3_K-DS-v03_01-en_de.pdf?fileId=db3a3043407895a701407b6e982f2815
FD1000R33HL3KBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 1000A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
auf Bestellung 96 Stücke:
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1+3618.93 EUR
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FD1000R17IE4DB2BOSA1 FD1000R17IE4D_B2.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1390A 6250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 16 Stücke:
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1+1167.58 EUR
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IPI530N15N3GXKSA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPI530N15N3GXKSA1
Hersteller: Infineon Technologies
Description: PFET, 21A I(D), 150V, 0.053OHM,
Produkt ist nicht verfügbar
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TT425N16KOFHPSA3 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TT425N16KOFHPSA3
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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DD600N16KAHPSA1 DD600N_Rev1_06-05-03.pdf
DD600N16KAHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 600A BGPB60
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Produkt ist nicht verfügbar
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TLE9250XLEXUMA1 Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980
TLE9250XLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 20000 Stücke:
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5000+1.23 EUR
10000+1.2 EUR
15000+1.19 EUR
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TLE9250XLEXUMA1 Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980
TLE9250XLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 25227 Stücke:
Lieferzeit 10-14 Tag (e)
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9+2.56 EUR
12+1.86 EUR
25+1.69 EUR
100+1.5 EUR
250+1.4 EUR
500+1.34 EUR
1000+1.31 EUR
2500+1.26 EUR
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CY8C20666A-24LTXI download
CY8C20666A-24LTXI
Hersteller: Infineon Technologies
Description: MCU 32K FLASH 2K SRAM 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Obsolete
Supplier Device Package: 48-QFN (7x7)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I²C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 1220 Stücke:
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AnzahlPrivatkunde
72+8.82 EUR
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CY8C3666AXI-202 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-202
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
auf Bestellung 160 Stücke:
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39+15.52 EUR
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CY8C20666AS-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20666AS-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE 32KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-QFN (6x6)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-UFQFN Exposed Pad
Packaging: Tray
auf Bestellung 8758 Stücke:
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8+2.83 EUR
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TLI493DW2BWA3XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA3XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLI493DW2BWA0XTSA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA0XTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
auf Bestellung 4000 Stücke:
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4000+1.43 EUR
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TLI493DW2BWA0XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA0XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Test Condition: -40°C ~ 125°C
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Programmable
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 9965 Stücke:
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9+2.45 EUR
10+2.15 EUR
11+2.05 EUR
25+1.92 EUR
50+1.83 EUR
100+1.75 EUR
500+1.59 EUR
1000+1.54 EUR
5000+1.42 EUR
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TLI493DW2BWA1XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA1XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
Produkt ist nicht verfügbar
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CY24293ZXCT download
CY24293ZXCT
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
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BC857B E6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857B E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 303389 Stücke:
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AnzahlPrivatkunde
7818+0.076 EUR
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BCR119WE6327 Infineon-BCR119SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a37301143f643b380286
BCR119WE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 123000 Stücke:
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AnzahlPrivatkunde
10764+0.054 EUR
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BCR119WH6327 INFNS17179-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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BCR191E6327 INFNS11718-1.pdf?t.download=true&u=5oefqw
BCR191E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 60871 Stücke:
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8013+0.079 EUR
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TUA 6036 T TUA6034_36_v251_110106.pdf
TUA 6036 T
Hersteller: Infineon Technologies
Description: IC VIDEO TUNER 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-TSSOP-38
Control Interface: I2C
Produkt ist nicht verfügbar
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D850N36TXPSA1 Infineon-D850N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a18c6d04782
D850N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 850A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 850A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
Produkt ist nicht verfügbar
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D740N36TXPSA1 D740N.pdf
D740N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 750A
Produkt ist nicht verfügbar
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D270N36TXPSA1 D270N.pdf
D270N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 270A
Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io): 270A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
Produkt ist nicht verfügbar
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ASP1212-N20NT ASP1212_V1.06_12-16-12.pdf
ASP1212-N20NT
Hersteller: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ASP1212-N50NT ASP1212_V1.06_12-16-12.pdf
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ASP1212-N60DT
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ASP1212-N60NT ASP1212_V1.06_12-16-12.pdf
ASP1212-N60NT
Hersteller: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAR88-02LRHE6327 INFNS15409-1.pdf?t.download=true&u=5oefqw
BAR88-02LRHE6327
Hersteller: Infineon Technologies
Description: PIN DIODE, 80V V(BR)
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167
2ED2101S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167
2ED2101S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2238 Stücke:
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AnzahlPrivatkunde
10+2.15 EUR
14+1.56 EUR
25+1.4 EUR
100+1.25 EUR
250+1.17 EUR
500+1.12 EUR
1000+1.08 EUR
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S25FS064SAGMFN010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFN010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
129+4.88 EUR
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S25FL116K0XMFN013 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFN013
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL116K0XMFN010 S25FL116K0XMFN010_Web.pdf
S25FL116K0XMFN010
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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S25FL116K0XMFN011 S25FL116K0XMFN011_Web.pdf
S25FL116K0XMFN011
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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ILD1151 INFNS19025-1.pdf?t.download=true&u=5oefqw
ILD1151
Hersteller: Infineon Technologies
Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 16296 Stücke:
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218+2.74 EUR
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PX8244HDMG008XTMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Hersteller: Infineon Technologies
Description: LED PX8244HDMG008XTMA1
Packaging: Bulk
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
64+9.39 EUR
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IPP90R500C3 IPP90R500C3_Rev1.0_7-29-08.pdf
IPP90R500C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB60R055CFD7ATMA1 Infineon-IPB60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2eb02953007
IPB60R055CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+6.54 EUR
2000+6.2 EUR
Mindestbestellmenge: 1000 Stücke
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IPB60R055CFD7ATMA1 Infineon-IPB60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2eb02953007
IPB60R055CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 5304 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.67 EUR
10+11.29 EUR
100+8.25 EUR
500+6.96 EUR
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IPB60R070CFD7ATMA1 Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d
IPB60R070CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1827 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.91 EUR
10+7.65 EUR
100+5.72 EUR
500+5.14 EUR
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IPB60R040CFD7ATMA1 Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+7.53 EUR
Mindestbestellmenge: 1000 Stücke
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IPB60R040CFD7ATMA1 Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.85 EUR
10+12.22 EUR
100+9.22 EUR
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IPD60R750E6BTMA1 Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08
IPD60R750E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252
auf Bestellung 36500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 662 Stücke
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IPD60R380E6ATMA2 Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a
IPD60R380E6ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 6650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
315+1.75 EUR
Mindestbestellmenge: 315 Stücke
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IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G INFNS27818-1.pdf?t.download=true&u=5oefqw
IPA126N10N3G
Hersteller: Infineon Technologies
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
399+1.44 EUR
Mindestbestellmenge: 399 Stücke
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CHL8328-35CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-35CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IAUC41N06S5L100ATMA1 Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae
IAUC41N06S5L100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
auf Bestellung 771 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
10+3.21 EUR
25+2.93 EUR
100+2.63 EUR
250+2.48 EUR
500+2.4 EUR
Mindestbestellmenge: 5 Stücke
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IPC302N15N3X7SA1 dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f
Hersteller: Infineon Technologies
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6
FZ400R17KE3S4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+234.3 EUR
Mindestbestellmenge: 3 Stücke
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FS225R12KE4BOSA1 Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6
FS225R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+688.56 EUR
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FD400R07PE4RB6BOSA1 Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+301.64 EUR
Mindestbestellmenge: 2 Stücke
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