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IQE006NE2LM5CGATMA1 IQE006NE2LM5CGATMA1 Infineon Technologies Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7 Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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10+3.09 EUR
100+2.21 EUR
500+1.74 EUR
1000+1.52 EUR
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IQE006NE2LM5ATMA1 IQE006NE2LM5ATMA1 Infineon Technologies Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4 Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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IQE006NE2LM5ATMA1 IQE006NE2LM5ATMA1 Infineon Technologies Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4 Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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100+1.87 EUR
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TLS4120D0EPV33XUMA1 TLS4120D0EPV33XUMA1 Infineon Technologies Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36 Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLS4120D0EPV33XUMA1 TLS4120D0EPV33XUMA1 Infineon Technologies Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36 Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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500+3.59 EUR
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TLS4125D0EPV33XUMA1 TLS4125D0EPV33XUMA1 Infineon Technologies Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c Description: OPTIREG SWITCHER
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TLS4125D0EPV33XUMA1 TLS4125D0EPV33XUMA1 Infineon Technologies Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c Description: OPTIREG SWITCHER
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F3L75R07W2E3B11BOMA1 F3L75R07W2E3B11BOMA1 Infineon Technologies INFNS28273-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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FP35R12KT4BPSA1 FP35R12KT4BPSA1 Infineon Technologies Infineon-FP35R12KT4-DS-v02_00-en_de.pdf?fileId=db3a304316f66ee801174440e4132f81 Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSF110N06NT3GXUMA1 Infineon Technologies INFNS19160-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
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BBY57-02V BBY57-02V Infineon Technologies INFNS15333-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
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DD1200S17H4_B2 Infineon Technologies INFN-S-A0001441409-1.pdf?t.download=true&u=5oefqw Description: DD1200S17 - RECTIFIER DIODE MODU
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DD1200S12H4NPSA1 Infineon Technologies INFN-S-A0003369620-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE MODULE
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CG7815AAT Infineon Technologies Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CG7815AA Infineon Technologies Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL1ED44173N01BTOBO1 EVAL1ED44173N01BTOBO1 Infineon Technologies Infineon-1ED44173N01B-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc99c2d45678 Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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BGS12WN6E6327XTSA1 BGS12WN6E6327XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
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36000+0.21 EUR
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BGS12WN6E6327XTSA1 BGS12WN6E6327XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
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50+0.36 EUR
53+0.34 EUR
100+0.31 EUR
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500+0.28 EUR
1000+0.26 EUR
5000+0.24 EUR
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CYW20733A2KML1GT CYW20733A2KML1GT Infineon Technologies CYW20733_RevS_11-9-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TLE8457LINLDOBOARDTOBO1 TLE8457LINLDOBOARDTOBO1 Infineon Technologies Infineon-Z8F63066797_TLE8457x_Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46265487f7b01658a8fd6094075 Description: TLE8457 LIN LDO BOARD
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1+192.46 EUR
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TT61N16KOFHPSA1 TT61N16KOFHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CY8C4014LQI-SLT2 CY8C4014LQI-SLT2 Infineon Technologies PSoC_4000Family_DS.pdf Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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125+4.24 EUR
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XMC4800-E196K2048AA Infineon Technologies Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3 Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 352K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
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1ED3890MU12MXUMA1 1ED3890MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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1000+6.38 EUR
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1ED3830MU12MXUMA1 1ED3830MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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IPP60R120P7 Infineon Technologies Infineon-IPP60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acd0f0fdf074f Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SP001385054 SP001385054 Infineon Technologies Infineon-IPP60R120C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a4fa44c90ed3 Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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CY7C1370KV25-167AXC CY7C1370KV25-167AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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2+15.42 EUR
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FXE167F96F66LACXP FXE167F96F66LACXP Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 768KB FLASH 144LQFP
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SAF-XE167K-48F66LAC SAF-XE167K-48F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
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44+11.71 EUR
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SAF-XE167K-72F66LAC SAF-XE167K-72F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 188 Stücke:
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43+11.93 EUR
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SAF-XE167H-96F66LAC SAF-XE167H-96F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAF-XE167F-96F80LACFXUMA1 SAF-XE167F-96F80LACFXUMA1 Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
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SAFXE167F96F66LAC SAFXE167F96F66LAC Infineon Technologies INFNS12557-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 768KB FLASH 144LQFP
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XE167F96F66LACFXUMA1 XE167F96F66LACFXUMA1 Infineon Technologies XE167_ds_v2.1_2008_08.pdf Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAF-XE167GM-48F80L AA SAF-XE167GM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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SAF-XE167GM-72F80L AA SAF-XE167GM-72F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 576KB FLASH 144LQFP
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SAF-XE167HM-48F80L AA SAF-XE167HM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
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EVAL1ED44176N01FTOBO1 EVAL1ED44176N01FTOBO1 Infineon Technologies Infineon-Low-side_driver-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46265487f7b01655c2d8358778a Description: EVAL BOARD FOR 1ED44176N01F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED44176N01F
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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ETD480N22P60HPSA1 ETD480N22P60HPSA1 Infineon Technologies Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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TC267D40F200NBCKXUMA1 TC267D40F200NBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
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TC267D40F200NBCKXUMA1 TC267D40F200NBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
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IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
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5000+0.54 EUR
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IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 Infineon Technologies Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151 Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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8+2.24 EUR
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500+0.76 EUR
1000+0.66 EUR
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TDB6HK165N16LOFHOSA1 Infineon Technologies Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
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TDB6HK124N16RRBOSA1 TDB6HK124N16RRBOSA1 Infineon Technologies INFN-S-A0005253096-1.pdf?t.download=true&u=5oefqw Description: SCR MODULE 1.6KV 70A MODULE
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TDB6HK240N16PBOSA1 TDB6HK240N16PBOSA1 Infineon Technologies Infineon-TDB6HK240N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee1179a75223 Description: THYRISTOR MODULE VDRM 1600V 70A
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TDB6HK180N16RRB21BOSA1 Infineon Technologies Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Description: 1600VBRIDGE MODULE
Packaging: Bulk
Part Status: Active
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TDB6HK165N16LOFHOSA1 Infineon Technologies Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Part Status: Discontinued at Digi-Key
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TDB6HK360N16P Infineon Technologies Infineon-TDB6HK360N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee13511f5228 Description: TDBXHK360 - BRIDGE RECTIFIER & A
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IPB034N03LGATMA1 IPB034N03LGATMA1 Infineon Technologies Infineon-IPP034N03L-DS-v02_00-en%5B1%5D.pdf?fileId=db3a304313b8b5a60113d3c9730503e7 Description: MOSFET N-CH 30V 80A D2PAK
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SPS03N60C3AKMA1 SPS03N60C3AKMA1 Infineon Technologies SPS03N60C3AKMA1.pdf Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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IKD03N60RFATMA1 IKD03N60RFATMA1 Infineon Technologies Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068 Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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ILB03N60 ILB03N60 Infineon Technologies INFNS07533-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ILP03N60 ILP03N60 Infineon Technologies INFNS07428-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
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SPD03N60C3 SPD03N60C3 Infineon Technologies Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IDL04G65C5XUMA2 IDL04G65C5XUMA2 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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IDL04G65C5XUMA2 IDL04G65C5XUMA2 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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IM818SCCXKMA1 IM818SCCXKMA1 Infineon Technologies Infineon-IM818-SCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e925ca2ea1 Description: CIPOS MAXI 1200V 8A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 8 A
Voltage: 1.2 kV
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IRF100P219AKMA1 IRF100P219AKMA1 Infineon Technologies Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
auf Bestellung 355 Stücke:
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3+8.38 EUR
25+4.86 EUR
100+4.02 EUR
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IQE006NE2LM5CGATMA1 Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7
IQE006NE2LM5CGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
auf Bestellung 9470 Stücke:
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Anzahl Preis
4+4.52 EUR
10+3.09 EUR
100+2.21 EUR
500+1.74 EUR
1000+1.52 EUR
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IQE006NE2LM5ATMA1 Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4
IQE006NE2LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Produkt ist nicht verfügbar
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IQE006NE2LM5ATMA1 Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4
IQE006NE2LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
auf Bestellung 1883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.72 EUR
100+1.87 EUR
500+1.52 EUR
Mindestbestellmenge: 5
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TLS4120D0EPV33XUMA1 Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36
TLS4120D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.37 EUR
Mindestbestellmenge: 3000
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TLS4120D0EPV33XUMA1 Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36
TLS4120D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.7 EUR
25+4.32 EUR
100+3.91 EUR
250+3.71 EUR
500+3.59 EUR
1000+3.49 EUR
Mindestbestellmenge: 3
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TLS4125D0EPV33XUMA1 Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c
TLS4125D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
Produkt ist nicht verfügbar
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TLS4125D0EPV33XUMA1 Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c
TLS4125D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 1 Stücke:
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F3L75R07W2E3B11BOMA1 INFNS28273-1.pdf?t.download=true&u=5oefqw
F3L75R07W2E3B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.44 EUR
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FP35R12KT4BPSA1 Infineon-FP35R12KT4-DS-v02_00-en_de.pdf?fileId=db3a304316f66ee801174440e4132f81
FP35R12KT4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+124.87 EUR
15+97.09 EUR
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BSF110N06NT3GXUMA1 INFNS19160-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
auf Bestellung 8335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
443+1.03 EUR
Mindestbestellmenge: 443
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BBY57-02V INFNS15333-1.pdf?t.download=true&u=5oefqw
BBY57-02V
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
Produkt ist nicht verfügbar
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DD1200S17H4_B2 INFN-S-A0001441409-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DD1200S17 - RECTIFIER DIODE MODU
auf Bestellung 82 Stücke:
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DD1200S12H4NPSA1 INFN-S-A0003369620-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Produkt ist nicht verfügbar
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CG7815AAT
Hersteller: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG7815AA
Hersteller: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL1ED44173N01BTOBO1 Infineon-1ED44173N01B-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc99c2d45678
EVAL1ED44173N01BTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.19 EUR
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BGS12WN6E6327XTSA1 3_cip11424.pdf
BGS12WN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
auf Bestellung 113140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.23 EUR
24000+0.22 EUR
36000+0.21 EUR
Mindestbestellmenge: 12000
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BGS12WN6E6327XTSA1 3_cip11424.pdf
BGS12WN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
auf Bestellung 113193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
50+0.36 EUR
53+0.34 EUR
100+0.31 EUR
250+0.29 EUR
500+0.28 EUR
1000+0.26 EUR
5000+0.24 EUR
Mindestbestellmenge: 44
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CYW20733A2KML1GT CYW20733_RevS_11-9-17.pdf
CYW20733A2KML1GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE8457LINLDOBOARDTOBO1 Infineon-Z8F63066797_TLE8457x_Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46265487f7b01658a8fd6094075
TLE8457LINLDOBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLE8457 LIN LDO BOARD
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+192.46 EUR
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TT61N16KOFHPSA1 TT61N.pdf
TT61N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CY8C4014LQI-SLT2 PSoC_4000Family_DS.pdf
CY8C4014LQI-SLT2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+4.24 EUR
Mindestbestellmenge: 125
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XMC4800-E196K2048AA Infineon-XMC4700-XMC4800-DS-v01_00-EN.pdf?fileId=5546d462518ffd850151908ea8db00b3
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 352K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1ED3890MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3890MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+6.38 EUR
Mindestbestellmenge: 1000
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1ED3830MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3830MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Produkt ist nicht verfügbar
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IPP60R120P7 Infineon-IPP60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acd0f0fdf074f
Hersteller: Infineon Technologies
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SP001385054 Infineon-IPP60R120C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a4fa44c90ed3
SP001385054
Hersteller: Infineon Technologies
Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
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CY7C1370KV25-167AXC download
CY7C1370KV25-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.42 EUR
Mindestbestellmenge: 2
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FXE167F96F66LACXP INFNS12557-1.pdf?t.download=true&u=5oefqw
FXE167F96F66LACXP
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Produkt ist nicht verfügbar
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SAF-XE167K-48F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167K-48F66LAC
Hersteller: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+11.71 EUR
Mindestbestellmenge: 44
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SAF-XE167K-72F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167K-72F66LAC
Hersteller: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
43+11.93 EUR
Mindestbestellmenge: 43
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SAF-XE167H-96F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167H-96F66LAC
Hersteller: Infineon Technologies
Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167F-96F80LACFXUMA1 INFNS12557-1.pdf?t.download=true&u=5oefqw
SAF-XE167F-96F80LACFXUMA1
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Produkt ist nicht verfügbar
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SAFXE167F96F66LAC INFNS12557-1.pdf?t.download=true&u=5oefqw
SAFXE167F96F66LAC
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Produkt ist nicht verfügbar
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XE167F96F66LACFXUMA1 XE167_ds_v2.1_2008_08.pdf
XE167F96F66LACFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167GM-48F80L AA XE167xM.pdf
SAF-XE167GM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE167GM-72F80L AA XE167xM.pdf
SAF-XE167GM-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
Produkt ist nicht verfügbar
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SAF-XE167HM-48F80L AA XE167xM.pdf
SAF-XE167HM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Produkt ist nicht verfügbar
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EVAL1ED44176N01FTOBO1 Infineon-Low-side_driver-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46265487f7b01655c2d8358778a
EVAL1ED44176N01FTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED44176N01F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED44176N01F
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.07 EUR
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ETD480N22P60HPSA1 Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e
ETD480N22P60HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TC267D40F200NBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC267D40F200NBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.54 EUR
Mindestbestellmenge: 5000
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IAUC100N04S6L025ATMA1 Infineon-IAUC100N04S6L025-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c9a8f861151
IAUC100N04S6L025ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.43 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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TDB6HK165N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+393.75 EUR
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TDB6HK124N16RRBOSA1 INFN-S-A0005253096-1.pdf?t.download=true&u=5oefqw
TDB6HK124N16RRBOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 70A MODULE
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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TDB6HK240N16PBOSA1 Infineon-TDB6HK240N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee1179a75223
TDB6HK240N16PBOSA1
Hersteller: Infineon Technologies
Description: THYRISTOR MODULE VDRM 1600V 70A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+349.68 EUR
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TDB6HK180N16RRB21BOSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
Hersteller: Infineon Technologies
Description: 1600VBRIDGE MODULE
Packaging: Bulk
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+231.16 EUR
Mindestbestellmenge: 3
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TDB6HK165N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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TDB6HK360N16P Infineon-TDB6HK360N16P-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124ee13511f5228
Hersteller: Infineon Technologies
Description: TDBXHK360 - BRIDGE RECTIFIER & A
Produkt ist nicht verfügbar
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IPB034N03LGATMA1 Infineon-IPP034N03L-DS-v02_00-en%5B1%5D.pdf?fileId=db3a304313b8b5a60113d3c9730503e7
IPB034N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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SPS03N60C3AKMA1 SPS03N60C3AKMA1.pdf
SPS03N60C3AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
454+1 EUR
Mindestbestellmenge: 454
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IKD03N60RFATMA1 Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068
IKD03N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.57 EUR
Mindestbestellmenge: 8
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ILB03N60 INFNS07533-1.pdf?t.download=true&u=5oefqw
ILB03N60
Hersteller: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ILP03N60 INFNS07428-1.pdf?t.download=true&u=5oefqw
ILP03N60
Hersteller: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
Produkt ist nicht verfügbar
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SPD03N60C3 Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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IDL04G65C5XUMA2 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.56 EUR
Mindestbestellmenge: 3000
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IDL04G65C5XUMA2 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.88 EUR
100+2.29 EUR
500+1.94 EUR
1000+1.65 EUR
Mindestbestellmenge: 6
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IM818SCCXKMA1 Infineon-IM818-SCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e925ca2ea1
IM818SCCXKMA1
Hersteller: Infineon Technologies
Description: CIPOS MAXI 1200V 8A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 8 A
Voltage: 1.2 kV
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.58 EUR
14+34.95 EUR
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
IRF100P219AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.38 EUR
25+4.86 EUR
100+4.02 EUR
Mindestbestellmenge: 3
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