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S25FS064SAGMFN010 S25FS064SAGMFN010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
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S25FL116K0XMFN013 S25FL116K0XMFN013 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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S25FL116K0XMFN010 S25FL116K0XMFN010 Infineon Technologies S25FL116K0XMFN010_Web.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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S25FL116K0XMFN011 S25FL116K0XMFN011 Infineon Technologies S25FL116K0XMFN011_Web.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
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ILD1151 ILD1151 Infineon Technologies INFNS19025-1.pdf?t.download=true&u=5oefqw Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
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PX8244HDMG008XTMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: LED PX8244HDMG008XTMA1
Packaging: Bulk
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IPP90R500C3 IPP90R500C3 Infineon Technologies IPP90R500C3_Rev1.0_7-29-08.pdf Description: MOSFET N-CH 900V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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IPB60R070CFD7ATMA1 IPB60R070CFD7ATMA1 Infineon Technologies Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30 Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30 Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPD60R750E6BTMA1 IPD60R750E6BTMA1 Infineon Technologies Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08 Description: MOSFET N-CH 600V 5.7A TO252
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IPD60R380E6ATMA2 IPD60R380E6ATMA2 Infineon Technologies Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G IPA126N10N3G Infineon Technologies INFNS27818-1.pdf?t.download=true&u=5oefqw Description: 35A, 100V, 0.0126OHM, N-CHANNEL
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CHL8328-35CRT CHL8328-35CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
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IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 Infineon Technologies Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
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25+2.93 EUR
100+2.63 EUR
250+2.48 EUR
500+2.4 EUR
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IPC302N15N3X7SA1 Infineon Technologies dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 FZ400R17KE3S4HOSA1 Infineon Technologies Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6 Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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FS225R12KE4BOSA1 FS225R12KE4BOSA1 Infineon Technologies Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6 Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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FD400R07PE4RB6BOSA1 Infineon Technologies Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4 Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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IPA180N10N3G IPA180N10N3G Infineon Technologies INFNS27819-1.pdf?t.download=true&u=5oefqw Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPDD60R145CFD7XTMA1 IPDD60R145CFD7XTMA1 Infineon Technologies Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7 Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
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500+2.96 EUR
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TLE9862QXA40XUMA1 TLE9862QXA40XUMA1 Infineon Technologies Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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10+8.1 EUR
25+7.49 EUR
100+6.81 EUR
250+6.49 EUR
500+6.28 EUR
1000+6.13 EUR
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IRFS33N15DTRLP IRFS33N15DTRLP Infineon Technologies irfs33n15d.pdf Description: MOSFET N-CH 150V 33A D2PAK
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SP376251064XTMA1 Infineon Technologies Description: TIRE PRESSURE SENSOR
Packaging: Bulk
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TT162N16KOFHPSA1 TT162N16KOFHPSA1 Infineon Technologies Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.6KV 260A MODULE
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CY7C1248KV18-400BZXC CY7C1248KV18-400BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY7C1265KV18-450BZXC CY7C1265KV18-450BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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TLS850D0TAV50ATMA1 TLS850D0TAV50ATMA1 Infineon Technologies Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Description: IC REG LIN 5V 500MA PG-TO263-7-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 82 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.425V @ 250mA
PSRR: 59dB (100Hz)
Part Status: Active
Control Features: Delay, Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-7-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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BSC0501NSIATMA1 BSC0501NSIATMA1 Infineon Technologies Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2 Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC0501NSIATMA1 BSC0501NSIATMA1 Infineon Technologies Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2 Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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111-4183PBF Infineon Technologies Description: IC REG BUCK CTRLR SMD
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KX8664FRIBE KX8664FRIBE Infineon Technologies INFNS11218-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY 8051 8-BIT MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
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IPB147N03LGATMA1 IPB147N03LGATMA1 Infineon Technologies IP%28B%2CP%29147N03L_G.pdf Description: MOSFET N-CH 30V 20A D2PAK
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TC397XX256F300SBCKXUMA1 TC397XX256F300SBCKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
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TC399XX256F300SBCKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
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XC87813FFA5VACKXUMA1 XC87813FFA5VACKXUMA1 Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 52KB (52K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 40
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
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TC212S8F133SCACKXUMA1 TC212S8F133SCACKXUMA1 Infineon Technologies infineon-tc21x22x-ac-datasheet-en.pdf Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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TC212S8F133SCACKXUMA1 TC212S8F133SCACKXUMA1 Infineon Technologies infineon-tc21x22x-ac-datasheet-en.pdf Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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TC214L8F133NACKXUMA1 TC214L8F133NACKXUMA1 Infineon Technologies Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac Description: IC MCU 32BIT 512KB FLASH 144TQFP
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 133MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
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PEF22810TV2.1 Infineon Technologies Description: IC LINE DRIVER
Packaging: Bulk
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PEB22811HV1.3 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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PEF22812FV2.2 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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PEF22818FV1.1 Infineon Technologies Description: IC TRANS SINGLE PORT DIGITAL
Packaging: Bulk
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PEF22812ELV2.2 Infineon Technologies Description: IC LINE DRIVER CHIP
Packaging: Bulk
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KP214E3022XTMA1 Infineon Technologies Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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IKWH70N65WR6XKSA1 IKWH70N65WR6XKSA1 Infineon Technologies Infineon-IKWH70N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63d1626fe1 Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
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TLI4971A050T5UE0001XUMA1 TLI4971A050T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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BSC152N10NSFG BSC152N10NSFG Infineon Technologies INFNS16198-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
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BSC118N10NSG BSC118N10NSG Infineon Technologies INFNS16721-1.pdf?t.download=true&u=5oefqw Description: BSC118N10 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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FP10R12W1T7PB3BPSA1 FP10R12W1T7PB3BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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FP10R12YT3BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FP10R12YT3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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FP25R12KT4_B15 Infineon Technologies INFNS28465-1.pdf?t.download=true&u=5oefqw Description: FP25R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 28 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-5-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FP25R12W2T7B11BPSA1 FP25R12W2T7B11BPSA1 Infineon Technologies Infineon-FP25R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f1861a4f72e6 Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
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FP25R12KT3BPSA1 FP25R12KT3BPSA1 Infineon Technologies Infineon-FP25R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316c90543e Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
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FP25R12KS4CBOSA1 FP25R12KS4CBOSA1 Infineon Technologies Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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S25FS064SAGMFN010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFN010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
auf Bestellung 219 Stücke:
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129+4.88 EUR
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S25FL116K0XMFN013 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFN013
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL116K0XMFN010 S25FL116K0XMFN010_Web.pdf
S25FL116K0XMFN010
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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S25FL116K0XMFN011 S25FL116K0XMFN011_Web.pdf
S25FL116K0XMFN011
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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ILD1151 INFNS19025-1.pdf?t.download=true&u=5oefqw
ILD1151
Hersteller: Infineon Technologies
Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 16296 Stücke:
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218+2.74 EUR
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PX8244HDMG008XTMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Hersteller: Infineon Technologies
Description: LED PX8244HDMG008XTMA1
Packaging: Bulk
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
64+9.39 EUR
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IPP90R500C3 IPP90R500C3_Rev1.0_7-29-08.pdf
IPP90R500C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB60R070CFD7ATMA1 Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d
IPB60R070CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1712 Stücke:
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AnzahlPrivatkunde
2+13.61 EUR
10+9.19 EUR
50+7.28 EUR
100+6.68 EUR
500+6.37 EUR
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IPB60R040CFD7ATMA1 Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
1000+7.53 EUR
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IPB60R040CFD7ATMA1 Infineon-IPB60R040CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2d82dcf2f30
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2881 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.99 EUR
10+12.33 EUR
50+9.9 EUR
100+9.22 EUR
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IPD60R750E6BTMA1 Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08
IPD60R750E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252
auf Bestellung 36500 Stücke:
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IPD60R380E6ATMA2 Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a
IPD60R380E6ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 6650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
315+1.74 EUR
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IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G INFNS27818-1.pdf?t.download=true&u=5oefqw
IPA126N10N3G
Hersteller: Infineon Technologies
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
auf Bestellung 1450 Stücke:
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AnzahlPrivatkunde
399+1.44 EUR
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CHL8328-35CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-35CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IAUC41N06S5L100ATMA1 Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae
IAUC41N06S5L100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
auf Bestellung 771 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
10+3.21 EUR
25+2.93 EUR
100+2.63 EUR
250+2.48 EUR
500+2.4 EUR
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IPC302N15N3X7SA1 dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f
Hersteller: Infineon Technologies
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6
FZ400R17KE3S4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 363 Stücke:
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AnzahlPrivatkunde
3+234.3 EUR
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FS225R12KE4BOSA1 Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6
FS225R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 1561 Stücke:
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1+688.56 EUR
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FD400R07PE4RB6BOSA1 Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 267 Stücke:
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AnzahlPrivatkunde
2+301.64 EUR
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IPA180N10N3G INFNS27819-1.pdf?t.download=true&u=5oefqw
IPA180N10N3G
Hersteller: Infineon Technologies
Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 400 Stücke:
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AnzahlPrivatkunde
400+1.49 EUR
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IPDD60R145CFD7XTMA1 Infineon-IPDD60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ea92342b7
IPDD60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
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3+7.25 EUR
10+5.13 EUR
100+3.71 EUR
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TLE9862QXA40XUMA1 Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2
TLE9862QXA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2+10.58 EUR
10+8.1 EUR
25+7.49 EUR
100+6.81 EUR
250+6.49 EUR
500+6.28 EUR
1000+6.13 EUR
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IRFS33N15DTRLP irfs33n15d.pdf
IRFS33N15DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Produkt ist nicht verfügbar
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SP376251064XTMA1
Hersteller: Infineon Technologies
Description: TIRE PRESSURE SENSOR
Packaging: Bulk
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100+5.52 EUR
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TT162N16KOFHPSA1 Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
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CY7C1248KV18-400BZXC download
CY7C1248KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY7C1265KV18-450BZXC download
CY7C1265KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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TLS850D0TAV50ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 82 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.425V @ 250mA
PSRR: 59dB (100Hz)
Part Status: Active
Control Features: Delay, Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-7-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
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10+4.3 EUR
25+3.94 EUR
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IPB100N06S2L05ATMA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304412b407950112b43227e5573c&ack=t
IPB100N06S2L05ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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BSC0501NSIATMA1 Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2
BSC0501NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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5000+1.11 EUR
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BSC0501NSIATMA1 Infineon-BSC0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014ef9e85b6214d2
BSC0501NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 11742 Stücke:
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7+3.22 EUR
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111-4183PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK CTRLR SMD
Produkt ist nicht verfügbar
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KX8664FRIBE INFNS11218-1.pdf?t.download=true&u=5oefqw
KX8664FRIBE
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY 8051 8-BIT MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
Produkt ist nicht verfügbar
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IPB147N03LGATMA1 IP%28B%2CP%29147N03L_G.pdf
IPB147N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A D2PAK
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644+0.86 EUR
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TC397XX256F300SBCKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC397XX256F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC399XX256F300SBCKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Produkt ist nicht verfügbar
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XC87813FFA5VACKXUMA1 Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t
XC87813FFA5VACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 52KB (52K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 40
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
auf Bestellung 8328 Stücke:
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126+4.27 EUR
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TC212S8F133SCACKXUMA1 infineon-tc21x22x-ac-datasheet-en.pdf
TC212S8F133SCACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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1800+20.43 EUR
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TC212S8F133SCACKXUMA1 infineon-tc21x22x-ac-datasheet-en.pdf
TC212S8F133SCACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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1+32.93 EUR
10+26.16 EUR
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TC214L8F133NACKXUMA1 Infineon-TC21x22x_AC-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695304b96c03ac
TC214L8F133NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144TQFP
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 133MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
Produkt ist nicht verfügbar
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PEF22810TV2.1
Hersteller: Infineon Technologies
Description: IC LINE DRIVER
Packaging: Bulk
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222+2.68 EUR
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PEB22811HV1.3
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
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79+7.59 EUR
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PEF22812FV2.2
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
auf Bestellung 378 Stücke:
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23+25.95 EUR
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PEF22818FV1.1
Hersteller: Infineon Technologies
Description: IC TRANS SINGLE PORT DIGITAL
Packaging: Bulk
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21+28.81 EUR
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PEF22812ELV2.2
Hersteller: Infineon Technologies
Description: IC LINE DRIVER CHIP
Packaging: Bulk
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17+35.03 EUR
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KP214E3022XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKWH70N65WR6XKSA1 Infineon-IKWH70N65WR6-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce63d1626fe1
IKWH70N65WR6XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
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3+9.17 EUR
30+5.13 EUR
120+4.24 EUR
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TLI4971A050T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A050T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2264 Stücke:
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3+7.28 EUR
5+6.52 EUR
10+6.24 EUR
25+5.89 EUR
50+5.66 EUR
100+5.45 EUR
500+5.02 EUR
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BSC152N10NSFG INFNS16198-1.pdf?t.download=true&u=5oefqw
BSC152N10NSFG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
auf Bestellung 9249 Stücke:
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204+2.71 EUR
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BSC118N10NSG INFNS16721-1.pdf?t.download=true&u=5oefqw
BSC118N10NSG
Hersteller: Infineon Technologies
Description: BSC118N10 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Produkt ist nicht verfügbar
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FP10R12W1T7PB3BPSA1
FP10R12W1T7PB3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+95.35 EUR
10+84.95 EUR
30+79.9 EUR
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FP10R12YT3BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FP10R12YT3B4BOMA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Produkt ist nicht verfügbar
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FP25R12KT4_B15 INFNS28465-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 28 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-5-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+112.37 EUR
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FP25R12W2T7B11BPSA1 Infineon-FP25R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f1861a4f72e6
FP25R12W2T7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+80.78 EUR
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FP25R12KT3BPSA1 Infineon-FP25R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316c90543e
FP25R12KT3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+129.12 EUR
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FP25R12KS4CBOSA1 Infineon-FP25R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a5e6516d
FP25R12KS4CBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Produkt ist nicht verfügbar
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