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IFS100B17N3E4PB11BPSA1 Infineon Technologies Description: IGBT MOD 1700V 150A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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IFS200V12PT4BOSA1 Infineon Technologies IFS200V12PT4.pdf Description: IGBT MODULE 1200V 200A
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ND175N34KHPSA1 Infineon Technologies Description: DIODE MOD POWERBLOCK PB50ND-1
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ND241S14KHPSA1 Infineon Technologies DD241S.pdf Description: DIODE GP 1.4KV 261A BG-PB50ND-1
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PS2GFANSET30599NOSA1 Infineon Technologies Description: MOD IGBT STACK PSAO-1
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PS3GHFANSET30603NOSA1 Infineon Technologies Description: MOD IGBT STACK PSAO-1
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PSDC217E3730833NOSA1 Infineon Technologies Description: MOD IGBT STACK PSAO-1
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SCREWCLAMPEASY1XOXA1 Infineon Technologies Description: EASY ACCESSORY
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STT2200N16P55XPSA1 STT2200N16P55XPSA1 Infineon Technologies Infineon-STT2200N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015fed4a8fb55c24 Description: SCR MODULE POWERBLOCK PS55-1
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T1330N20TOFVTXPSA1 Infineon Technologies T1330N.pdf Description: SCR MODULE 2200V 2600A DO200AC
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T1590N22TOFVTXPSA1 Infineon Technologies T1590N.pdf Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
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T1590N24TOFVTXPSA1 Infineon Technologies T1590N.pdf Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
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T1590N28TOFVTXPSA1 T1590N28TOFVTXPSA1 Infineon Technologies Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b Description: SCR MODULE 2.8KV 3200A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
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T1800N42TOFXPSA1 Infineon Technologies Description: SCR MODULE 4200V 2820A DO200AE
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T1960N20TOFVTXPSA1 T1960N20TOFVTXPSA1 Infineon Technologies T1960N.pdf Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
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T2001N36TOFVTXPSA1 Infineon Technologies Description: SCR MODULE 3600V 3200A DO200AE
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T2180N12TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1800V 4460A DO200AD
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T360N20TOFXPSA1 Infineon Technologies T360N.pdf Description: SCR MODULE 2600V 550A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 360 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 550 A
Voltage - Off State: 2.6 kV
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T420N16TOFXPSA1 T420N16TOFXPSA1 Infineon Technologies Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339 Description: SCR MODULE 1800V 750A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 424 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 750 A
Voltage - Off State: 1.8 kV
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T640N12TOFXPSA1 Infineon Technologies Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
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T640N14TOFXPSA1 T640N14TOFXPSA1 Infineon Technologies Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
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T640N18TOFXPSA1 Infineon Technologies Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a Description: SCR MODULE 1800V 1250A DO200AA
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T690N02TOFXPSA1 Infineon Technologies T690N.pdf Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
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T690N04TOFXPSA1 T690N04TOFXPSA1 Infineon Technologies Infineon-T690N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286340153b52ed Description: SCR MODULE 600V 900A TO-200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
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T690N06TOFXPSA1 T690N06TOFXPSA1 Infineon Technologies Infineon-T690N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286340153b52ed Description: SCR MODULE 600V 900A TO-200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
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T740N26TOFXPSA1 T740N26TOFXPSA1 Infineon Technologies Infineon-T740N-DataSheet-v03_02-EN.pdf?fileId=5546d4627112d9d501712afb68c33ffd Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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T860N30TOFVTXPSA1 Infineon Technologies T860N.pdf Description: SCR MODULE 3600V 2000A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 860 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 3.6 kV
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T860N32TOFVTXPSA1 Infineon Technologies T860N.pdf Description: SCR MODULE 3600V 2000A DO200AC
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T920N02TOFXPSA1 T920N02TOFXPSA1 Infineon Technologies Infineon-T920N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128634e0db252f7 Description: SCR MODULE 600V 1500A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 925 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 600 V
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TD122N22KOFHPSA1 TD122N22KOFHPSA1 Infineon Technologies Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10 Description: SCR MODULE 2400V 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
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TD122N24KOFHPSA1 TD122N24KOFHPSA1 Infineon Technologies Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10 Description: SCR MODULE 2.4KV 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
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TD150N24KOFHPSA1 TD150N24KOFHPSA1 Infineon Technologies TT150N.pdf Description: SCR MODULE 2600V 350A MODULE
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TD150N26KOFHPSA1 TD150N26KOFHPSA1 Infineon Technologies TT150N.pdf Description: SCR MODULE 2600V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 2.6 kV
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TD210N16KOFHPSA1 TD210N16KOFHPSA1 Infineon Technologies Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd Description: SCR MODULE 1800V 410A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 1.8 kV
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TD425N16KOFHPSA2 TD425N16KOFHPSA2 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.8KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.8 kV
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TD430N22KOFHPSA2 TD430N22KOFHPSA2 Infineon Technologies infineon-tt430n-datasheet-en.pdf Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
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TD570N16KOFHPSA2 TD570N16KOFHPSA2 Infineon Technologies Infineon-TT570N-DS-v3_1-en_de.pdf?fileId=db3a304412b407950112b42f96354c4e Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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TT175N16SOFHPSA1 TT175N16SOFHPSA1 Infineon Technologies Infineon-TT175N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04699a02e07 Description: SCR MODULE 1.6KV 275A MODULE
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TZ810N22KOFB01HPSA1 TZ810N22KOFB01HPSA1 Infineon Technologies Description: SCR MODULE 2200V 1500A MODULE
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TZ860N16KOFTIMHPSA1 TZ860N16KOFTIMHPSA1 Infineon Technologies Infineon-TZ860N16KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666920b4f60e9 Description: SCR MODULE 1600V 1500A MODULE
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XMC4402F100K256BAXQMA1 XMC4402F100K256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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10+17.34 EUR
90+14.92 EUR
180+14.41 EUR
270+14.16 EUR
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2ED2304S06FXLSA1 2ED2304S06FXLSA1 Infineon Technologies 2ED2304S06F_Ver2.9_5-12-22.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8-910
Driven Configuration: Half-Bridge
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA60R170CFD7XKSA1 IPA60R170CFD7XKSA1 Infineon Technologies Infineon-IPA60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea37376b831a4 Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 162 Stücke:
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50+3.3 EUR
100+3.06 EUR
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IPA70R450P7SXKSA1 IPA70R450P7SXKSA1 Infineon Technologies infineon-ipa70r450p7s-datasheet-en.pdf Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
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IPA70R750P7SXKSA1 IPA70R750P7SXKSA1 Infineon Technologies infineon-ipa70r750p7s-datasheet-en.pdf Description: MOSFET N-CH 700V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 21.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R900P7SXKSA1 IPA70R900P7SXKSA1 Infineon Technologies Infineon-IPA70R900P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f497f631c405a Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Produkt ist nicht verfügbar
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IPP60R170CFD7XKSA1 IPP60R170CFD7XKSA1 Infineon Technologies Infineon-IPP60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3d82d3331b1 Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.85 EUR
50+3.45 EUR
100+3.12 EUR
500+2.55 EUR
1000+2.36 EUR
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IPSA70R1K4P7SAKMA1 IPSA70R1K4P7SAKMA1 Infineon Technologies Infineon-IPSA70R1K4P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d49d8871342 Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
Produkt ist nicht verfügbar
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IPSA70R360P7SAKMA1 IPSA70R360P7SAKMA1 Infineon Technologies infineon-ipsa70r360p7s-ds-en.pdf Description: MOSFET N-CH 700V 12.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
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IPSA70R450P7SAKMA1 IPSA70R450P7SAKMA1 Infineon Technologies infineon-ipsa70r450p7s-ds-en.pdf Description: MOSFET N-CH 700V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 1266 Stücke:
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9+2.45 EUR
75+1.08 EUR
150+0.96 EUR
525+0.8 EUR
1050+0.73 EUR
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IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Infineon Technologies Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389 Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar
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IPSA70R900P7SAKMA1 IPSA70R900P7SAKMA1 Infineon Technologies infineon-ipsa70r900p7s-ds-en.pdf Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Produkt ist nicht verfügbar
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IPZA60R080P7XKSA1 IPZA60R080P7XKSA1 Infineon Technologies infineon-ipza60r080p7-ds-en.pdf Description: MOSFET N-CH 600V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
auf Bestellung 153 Stücke:
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3+8.76 EUR
30+5.49 EUR
120+5.25 EUR
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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Infineon Technologies infineon-ipza60r180p7-ds-en.pdf Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
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BCR430UXTSA1 BCR430UXTSA1 Infineon Technologies Description: IC LED DRV LIN PWM 100MA SOT23-6
Voltage - Supply (Max): 42V
Voltage - Supply (Min): 6V
Dimming: PWM
Supplier Device Package: PG-SOT23-6-1
Topology: Constant Current
Internal Switch(s): No
Current - Output / Channel: 100mA
Applications: LED Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 42V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD60R280CFD7ATMA1 IPD60R280CFD7ATMA1 Infineon Technologies Infineon-IPD60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea38eeda031aa Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
auf Bestellung 351 Stücke:
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4+5.26 EUR
10+3.38 EUR
100+2.32 EUR
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IPL60R185CFD7AUMA1 IPL60R185CFD7AUMA1 Infineon Technologies Infineon-IPL60R185CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3bcb41d31af Description: MOSFET N-CH 600V 14A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.03 EUR
10+4.59 EUR
100+3.21 EUR
500+2.62 EUR
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IPL60R075CFD7AUMA1 IPL60R075CFD7AUMA1 Infineon Technologies Infineon-IPL60R075CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3aa6a5731ad Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 3844 Stücke:
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2+13.89 EUR
10+9.38 EUR
100+6.83 EUR
500+6.53 EUR
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BTS432E2E3062ANTMA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 9A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 42V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS432E2NKSA1 Infineon Technologies Description: IC PWR SWITCH HIGH SIDE TO220AB-
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IFS100B17N3E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 150A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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IFS200V12PT4BOSA1 IFS200V12PT4.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 200A
Produkt ist nicht verfügbar
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ND175N34KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD POWERBLOCK PB50ND-1
Produkt ist nicht verfügbar
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ND241S14KHPSA1 DD241S.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.4KV 261A BG-PB50ND-1
Produkt ist nicht verfügbar
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PS2GFANSET30599NOSA1
Hersteller: Infineon Technologies
Description: MOD IGBT STACK PSAO-1
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PS3GHFANSET30603NOSA1
Hersteller: Infineon Technologies
Description: MOD IGBT STACK PSAO-1
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PSDC217E3730833NOSA1
Hersteller: Infineon Technologies
Description: MOD IGBT STACK PSAO-1
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SCREWCLAMPEASY1XOXA1
Hersteller: Infineon Technologies
Description: EASY ACCESSORY
Produkt ist nicht verfügbar
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STT2200N16P55XPSA1 Infineon-STT2200N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015fed4a8fb55c24
STT2200N16P55XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE POWERBLOCK PS55-1
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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T1330N20TOFVTXPSA1 T1330N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 2200V 2600A DO200AC
Produkt ist nicht verfügbar
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T1590N22TOFVTXPSA1 T1590N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
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T1590N24TOFVTXPSA1 T1590N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 2800V 3200A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
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T1590N28TOFVTXPSA1 Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b
T1590N28TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.8KV 3200A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1590 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 3200 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
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T1800N42TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 4200V 2820A DO200AE
Produkt ist nicht verfügbar
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T1960N20TOFVTXPSA1 T1960N.pdf
T1960N20TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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T2001N36TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 3600V 3200A DO200AE
Produkt ist nicht verfügbar
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T2180N12TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 4460A DO200AD
Produkt ist nicht verfügbar
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T360N20TOFXPSA1 T360N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 550A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 360 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 550 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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T420N16TOFXPSA1 Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339
T420N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 750A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 424 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 750 A
Voltage - Off State: 1.8 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+226.25 EUR
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T640N12TOFXPSA1 Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T640N14TOFXPSA1 Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a
T640N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 644 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.8 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+254.83 EUR
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T640N18TOFXPSA1 Infineon-T640N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863803806534a
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1250A DO200AA
Produkt ist nicht verfügbar
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T690N02TOFXPSA1 T690N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 900A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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T690N04TOFXPSA1 Infineon-T690N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286340153b52ed
T690N04TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 900A TO-200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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T690N06TOFXPSA1 Infineon-T690N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286340153b52ed
T690N06TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 900A TO-200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 694 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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T740N26TOFXPSA1 Infineon-T740N-DataSheet-v03_02-EN.pdf?fileId=5546d4627112d9d501712afb68c33ffd
T740N26TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
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T860N30TOFVTXPSA1 T860N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 3600V 2000A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 860 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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T860N32TOFVTXPSA1 T860N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 3600V 2000A DO200AC
Produkt ist nicht verfügbar
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T920N02TOFXPSA1 Infineon-T920N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128634e0db252f7
T920N02TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 1500A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 925 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
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TD122N22KOFHPSA1 Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10
TD122N22KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2400V 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
Produkt ist nicht verfügbar
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TD122N24KOFHPSA1 Infineon-TT122N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fde7a4e10
TD122N24KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.4KV 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 2.4 kV
Produkt ist nicht verfügbar
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TD150N24KOFHPSA1 TT150N.pdf
TD150N24KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 350A MODULE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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TD150N26KOFHPSA1 TT150N.pdf
TD150N26KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 350A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 223 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 350 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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TD210N16KOFHPSA1 Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd
TD210N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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TD425N16KOFHPSA2 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TD425N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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TD430N22KOFHPSA2 infineon-tt430n-datasheet-en.pdf
TD430N22KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TD570N16KOFHPSA2 Infineon-TT570N-DS-v3_1-en_de.pdf?fileId=db3a304412b407950112b42f96354c4e
TD570N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+489.15 EUR
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TT175N16SOFHPSA1 Infineon-TT175N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04699a02e07
TT175N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 275A MODULE
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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TZ810N22KOFB01HPSA1
TZ810N22KOFB01HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2200V 1500A MODULE
Produkt ist nicht verfügbar
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TZ860N16KOFTIMHPSA1 Infineon-TZ860N16KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666920b4f60e9
TZ860N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 1500A MODULE
Produkt ist nicht verfügbar
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XMC4402F100K256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4402F100K256BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.12 EUR
10+17.34 EUR
90+14.92 EUR
180+14.41 EUR
270+14.16 EUR
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2ED2304S06FXLSA1 2ED2304S06F_Ver2.9_5-12-22.pdf
2ED2304S06FXLSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8-910
Driven Configuration: Half-Bridge
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA60R170CFD7XKSA1 Infineon-IPA60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea37376b831a4
IPA60R170CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 162 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.09 EUR
50+3.3 EUR
100+3.06 EUR
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IPA70R450P7SXKSA1 infineon-ipa70r450p7s-datasheet-en.pdf
IPA70R450P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R750P7SXKSA1 infineon-ipa70r750p7s-datasheet-en.pdf
IPA70R750P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 21.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R900P7SXKSA1 Infineon-IPA70R900P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f497f631c405a
IPA70R900P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 20.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Produkt ist nicht verfügbar
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IPP60R170CFD7XKSA1 Infineon-IPP60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3d82d3331b1
IPP60R170CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.85 EUR
50+3.45 EUR
100+3.12 EUR
500+2.55 EUR
1000+2.36 EUR
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IPSA70R1K4P7SAKMA1 Infineon-IPSA70R1K4P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d49d8871342
IPSA70R1K4P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
Produkt ist nicht verfügbar
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IPSA70R360P7SAKMA1 infineon-ipsa70r360p7s-ds-en.pdf
IPSA70R360P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
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IPSA70R450P7SAKMA1 infineon-ipsa70r450p7s-ds-en.pdf
IPSA70R450P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 1266 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
75+1.08 EUR
150+0.96 EUR
525+0.8 EUR
1050+0.73 EUR
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IPSA70R600P7SAKMA1 Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389
IPSA70R600P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar
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IPSA70R900P7SAKMA1 infineon-ipsa70r900p7s-ds-en.pdf
IPSA70R900P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 30.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Produkt ist nicht verfügbar
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IPZA60R080P7XKSA1 infineon-ipza60r080p7-ds-en.pdf
IPZA60R080P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.76 EUR
30+5.49 EUR
120+5.25 EUR
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IPZA60R180P7XKSA1 infineon-ipza60r180p7-ds-en.pdf
IPZA60R180P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
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BCR430UXTSA1
BCR430UXTSA1
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Voltage - Supply (Max): 42V
Voltage - Supply (Min): 6V
Dimming: PWM
Supplier Device Package: PG-SOT23-6-1
Topology: Constant Current
Internal Switch(s): No
Current - Output / Channel: 100mA
Applications: LED Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 42V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD60R280CFD7ATMA1 Infineon-IPD60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea38eeda031aa
IPD60R280CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.26 EUR
10+3.38 EUR
100+2.32 EUR
Mindestbestellmenge: 4 Stücke
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IPL60R185CFD7AUMA1 Infineon-IPL60R185CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3bcb41d31af
IPL60R185CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.03 EUR
10+4.59 EUR
100+3.21 EUR
500+2.62 EUR
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IPL60R075CFD7AUMA1 Infineon-IPL60R075CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3aa6a5731ad
IPL60R075CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.1A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 3844 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.89 EUR
10+9.38 EUR
100+6.83 EUR
500+6.53 EUR
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BTS432E2E3062ANTMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 9A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 42V
Input Type: Non-Inverting
Rds On (Typ): 30mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS432E2NKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HIGH SIDE TO220AB-
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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