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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 Infineon Technologies Infineon-IPP80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c200b9d5d467c Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
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IPP80R750P7XKSA1 IPP80R750P7XKSA1 Infineon Technologies Infineon-IPP80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08a45848f2 Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Produkt ist nicht verfügbar
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IPP80R600P7XKSA1 IPP80R600P7XKSA1 Infineon Technologies Infineon-IPP80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c108f62163d06 Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar
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IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Produkt ist nicht verfügbar
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Infineon Technologies Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
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IPU80R600P7AKMA1 IPU80R600P7AKMA1 Infineon Technologies Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
10+2.13 EUR
100+1.70 EUR
500+1.44 EUR
Mindestbestellmenge: 7
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IPS80R2K4P7AKMA1 IPS80R2K4P7AKMA1 Infineon Technologies Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Produkt ist nicht verfügbar
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IPS80R1K2P7AKMA1 IPS80R1K2P7AKMA1 Infineon Technologies Infineon-IPS80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c10e1c32f3ed0 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
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IPS80R750P7AKMA1 IPS80R750P7AKMA1 Infineon Technologies Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183 Description: MOSFET N-CH 800V 7A TO251-3
Produkt ist nicht verfügbar
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IPS80R600P7AKMA1 IPS80R600P7AKMA1 Infineon Technologies Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar
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IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+1.93 EUR
100+1.42 EUR
500+1.17 EUR
1000+1.05 EUR
Mindestbestellmenge: 7
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IPD80R360P7ATMA1 IPD80R360P7ATMA1 Infineon Technologies Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94 Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
Produkt ist nicht verfügbar
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
auf Bestellung 2567 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.70 EUR
Mindestbestellmenge: 8
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IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+1.30 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 9
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IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 4150 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.21 EUR
Mindestbestellmenge: 5
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies Infineon-IPD80R1K2P7-DataSheet-v02_02-EN.pdf?fileId=5546d46262475fbe01624864728b3cd0&redirId=136886 Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.20 EUR
12+1.48 EUR
Mindestbestellmenge: 8
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IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+1.81 EUR
100+1.34 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 7
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IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 2583 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
15+1.19 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 11
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V6114100NSHPSA1 Infineon Technologies Description: CLAMP FOR DISK DEVICES
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V501445S3HPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 42MM HOUSINGS
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V501460MHPSA1 V501460MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+117.55 EUR
5+110.83 EUR
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V501460NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7 Description: CLAMP DISK DEVICES 42MM HOUSINGS
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V7214150MHPSA1 Infineon Technologies Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79 Description: CLAMP DISK DEVICES 58MM HOUSINGS
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V8926120NHPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 75MM HOUSINGS
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V8926170NHPSA1 Infineon Technologies V89.pdf Description: CLAMP DISK DEVICES 75MM HOUSINGS
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V8926400NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27 Description: CLAMP DISK DEVICES 75MM HOUSINGS
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D1251S45TXPSA1 D1251S45TXPSA1 Infineon Technologies Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Description: DIODE GEN PURP 4.5KV 1530A
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D126A45CXPSA1 Infineon Technologies Description: DIODE GEN PURP 4.5KV 200A
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DD81S14KHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE MODULE GP 1400V 96A
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DD81S14KAHPSA1 Infineon Technologies Description: DIODE ARRAY MOD 1000V 150A
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DD81S14KKHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE ARRAY MOD 1000V 150A
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DD1000S33HE3BPSA1 DD1000S33HE3BPSA1 Infineon Technologies Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+1719.92 EUR
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DD500S33HE3BPSA1 DD500S33HE3BPSA1 Infineon Technologies Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796 Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
auf Bestellung 2 Stücke:
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1+1499.33 EUR
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DDB6U104N16RRBOSA1 DDB6U104N16RRBOSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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DDB6U144N16RBOSA1 DDB6U144N16RBOSA1 Infineon Technologies INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+137.21 EUR
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D8320N02TVFXPSA1 Infineon Technologies D8320N.pdf Description: DIODE GEN PURP 200V 8320A
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D850N30TXPSA1 D850N30TXPSA1 Infineon Technologies D850N.pdf Description: DIODE GEN PURP 3KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3000 V
Produkt ist nicht verfügbar
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D56U40CXPSA1 D56U40CXPSA1 Infineon Technologies D56S,U.pdf Description: DIODE GEN PURP 4KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
Produkt ist nicht verfügbar
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D56U45CPRXPSA1 D56U45CPRXPSA1 Infineon Technologies D56S,U.pdf Description: DIODE GP 4.5KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
Produkt ist nicht verfügbar
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D452N14EXPSA1 Infineon Technologies D452N.pdf Description: DIODE GEN PURP 1.4KV 450A FL54
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D452N18EXPSA1 Infineon Technologies D452N.pdf Description: DIODE RECTIFIER 1200V 710A
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D452N18EVFXPSA1 D452N18EVFXPSA1 Infineon Technologies D452N.pdf Description: DIODE GEN PURP 1.8KV 450A FL54
Packaging: Bulk
Package / Case: Nonstandard
Mounting Type: Screw Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: FL54
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
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D970N02TXPSA1 D970N02TXPSA1 Infineon Technologies D970N.pdf Description: DIODE GEN PURP 200V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 200 V
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D970N04TXPSA1 Infineon Technologies D970N.pdf Description: DIODE GEN PURP 400V 970A
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D970N08TXPSA1 D970N08TXPSA1 Infineon Technologies D970N.pdf Description: DIODE STANDARD 800V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
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D4401N20T D4401N20T Infineon Technologies Description: DIODE RECTIFIER 2200V 4240A
Packaging: Bulk
Produkt ist nicht verfügbar
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D475N36BXPSA1 D475N36BXPSA1 Infineon Technologies D475N.pdf Description: DIODE GEN PURP 3.6KV 475A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 475A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Current - Reverse Leakage @ Vr: 40 mA @ 3600 V
Produkt ist nicht verfügbar
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D721S35TXPSA1 Infineon Technologies D721S.pdf Description: DIODE RECTIFIER 3500V 600A
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D721S45TXPSA1 Infineon Technologies D721S.pdf Description: DIODE GEN PURP 4.5KV 1080A
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D721S45TPRXPSA1 Infineon Technologies D721S.pdf Description: DIODE RECTIFIER 3500V 600A
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D650N06TXPSA1 D650N06TXPSA1 Infineon Technologies Infineon-D650N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5c46e180069 Description: DIODE GEN PURP 600V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Produkt ist nicht verfügbar
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D450S20TXPSA1 D450S20TXPSA1 Infineon Technologies D450S.pdf Description: DIODE GEN PURP 2KV 443A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.2 µs
Technology: Standard
Current - Average Rectified (Io): 443A
Operating Temperature - Junction: -25°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
Current - Reverse Leakage @ Vr: 10 mA @ 2000 V
Produkt ist nicht verfügbar
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6PS04512E43G37986NOSA1 Infineon Technologies Infineon-6PS04512E43G37986-DS-v02_02-en.pdf?fileId=db3a30433ff796e70140063e44e85e06 Description: IGBT MODULE 400V 217A
Produkt ist nicht verfügbar
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6PS18012E4FG35689NWSA1 6PS18012E4FG35689NWSA1 Infineon Technologies Infineon-6PS18012E4FG35689-DS-v02_00-en.pdf?fileId=db3a3043382e8373013895984af41682 Description: IGBT MODULE 1200V 729A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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2PS13512E43W39689NOSA1 2PS13512E43W39689NOSA1 Infineon Technologies Infineon-2PS13512E43W39689-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace83b16457 Description: IGBT MODULE 1200V 900A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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BSM75GB60DLCHOSA1 BSM75GB60DLCHOSA1 Infineon Technologies Infineon-BSM75GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43486956060 Description: IGBT MOD 600V 100A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM200GB60DLCHOSA1 BSM200GB60DLCHOSA1 Infineon Technologies Infineon-BSM200GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a30431ff98815011ffb134cba000b Description: IGBT MOD 600V 230A 730W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 730 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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6MS20017E43W37032NOSA1 6MS20017E43W37032NOSA1 Infineon Technologies Infineon-6MS20017E43W37032-DS-v02_00-en.pdf?fileId=db3a304336ca04c9013712101fe87e32 Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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6MS20017E43W38170NOSA1 6MS20017E43W38170NOSA1 Infineon Technologies Infineon-6MS20017E43W38170-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d32c1f910160 Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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DF120R12W2H3B27BOMA1 DF120R12W2H3B27BOMA1 Infineon Technologies Infineon-DF120R12W2H3_B27-DS-v03_01-EN.pdf?fileId=db3a304340e762c80140e886ef5e0142 Description: IGBT MOD 1200V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+72.18 EUR
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IPP80R1K2P7XKSA1 Infineon-IPP80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c200b9d5d467c
IPP80R1K2P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
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IPP80R750P7XKSA1 Infineon-IPP80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08a45848f2
IPP80R750P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Produkt ist nicht verfügbar
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IPP80R600P7XKSA1 Infineon-IPP80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c108f62163d06
IPP80R600P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar
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IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Produkt ist nicht verfügbar
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IPU80R1K2P7AKMA1 Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685
IPU80R1K2P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
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IPU80R600P7AKMA1 Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455
IPU80R600P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
10+2.13 EUR
100+1.70 EUR
500+1.44 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R2K4P7AKMA1 Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179
IPS80R2K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R1K2P7AKMA1 Infineon-IPS80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c10e1c32f3ed0
IPS80R1K2P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R750P7AKMA1 Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183
IPS80R750P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R600P7AKMA1 Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394
IPS80R600P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R900P7ATMA1 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
IPD80R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.93 EUR
100+1.42 EUR
500+1.17 EUR
1000+1.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R360P7ATMA1 Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94
IPD80R360P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
auf Bestellung 2567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.70 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.30 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 4150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.21 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K2P7ATMA1 Infineon-IPD80R1K2P7-DataSheet-v02_02-EN.pdf?fileId=5546d46262475fbe01624864728b3cd0&redirId=136886
IPD80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
12+1.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+1.81 EUR
100+1.34 EUR
500+1.02 EUR
1000+0.94 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 2583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.19 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 11
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V6114100NSHPSA1
Hersteller: Infineon Technologies
Description: CLAMP FOR DISK DEVICES
Produkt ist nicht verfügbar
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V501445S3HPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V501460MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
V501460MHPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.55 EUR
5+110.83 EUR
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V501460NHPSA1 Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
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V7214150MHPSA1 Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Produkt ist nicht verfügbar
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V8926120NHPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Produkt ist nicht verfügbar
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V8926170NHPSA1 V89.pdf
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Produkt ist nicht verfügbar
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V8926400NHPSA1 Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Produkt ist nicht verfügbar
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D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
D1251S45TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1530A
Produkt ist nicht verfügbar
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D126A45CXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 200A
Produkt ist nicht verfügbar
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DD81S14KHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1400V 96A
Produkt ist nicht verfügbar
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DD81S14KAHPSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
Produkt ist nicht verfügbar
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DD81S14KKHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Hersteller: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
Produkt ist nicht verfügbar
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DD1000S33HE3BPSA1 Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279
DD1000S33HE3BPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1719.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DD500S33HE3BPSA1 Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796
DD500S33HE3BPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1499.33 EUR
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DDB6U104N16RRBOSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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DDB6U144N16RBOSA1 INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw
DDB6U144N16RBOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+137.21 EUR
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D8320N02TVFXPSA1 D8320N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 8320A
Produkt ist nicht verfügbar
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D850N30TXPSA1 D850N.pdf
D850N30TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3000 V
Produkt ist nicht verfügbar
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D56U40CXPSA1 D56S,U.pdf
D56U40CXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
Produkt ist nicht verfügbar
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D56U45CPRXPSA1 D56S,U.pdf
D56U45CPRXPSA1
Hersteller: Infineon Technologies
Description: DIODE GP 4.5KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
Produkt ist nicht verfügbar
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D452N14EXPSA1 D452N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 450A FL54
Produkt ist nicht verfügbar
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D452N18EXPSA1 D452N.pdf
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 1200V 710A
Produkt ist nicht verfügbar
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D452N18EVFXPSA1 D452N.pdf
D452N18EVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 450A FL54
Packaging: Bulk
Package / Case: Nonstandard
Mounting Type: Screw Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: FL54
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
Produkt ist nicht verfügbar
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D970N02TXPSA1 D970N.pdf
D970N02TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 200 V
Produkt ist nicht verfügbar
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D970N04TXPSA1 D970N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 400V 970A
Produkt ist nicht verfügbar
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D970N08TXPSA1 D970N.pdf
D970N08TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 800V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
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D4401N20T
D4401N20T
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 2200V 4240A
Packaging: Bulk
Produkt ist nicht verfügbar
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D475N36BXPSA1 D475N.pdf
D475N36BXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 475A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 475A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Current - Reverse Leakage @ Vr: 40 mA @ 3600 V
Produkt ist nicht verfügbar
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D721S35TXPSA1 D721S.pdf
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 3500V 600A
Produkt ist nicht verfügbar
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D721S45TXPSA1 D721S.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1080A
Produkt ist nicht verfügbar
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D721S45TPRXPSA1 D721S.pdf
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 3500V 600A
Produkt ist nicht verfügbar
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D650N06TXPSA1 Infineon-D650N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5c46e180069
D650N06TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Produkt ist nicht verfügbar
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D450S20TXPSA1 D450S.pdf
D450S20TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2KV 443A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.2 µs
Technology: Standard
Current - Average Rectified (Io): 443A
Operating Temperature - Junction: -25°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
Current - Reverse Leakage @ Vr: 10 mA @ 2000 V
Produkt ist nicht verfügbar
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6PS04512E43G37986NOSA1 Infineon-6PS04512E43G37986-DS-v02_02-en.pdf?fileId=db3a30433ff796e70140063e44e85e06
Hersteller: Infineon Technologies
Description: IGBT MODULE 400V 217A
Produkt ist nicht verfügbar
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6PS18012E4FG35689NWSA1 Infineon-6PS18012E4FG35689-DS-v02_00-en.pdf?fileId=db3a3043382e8373013895984af41682
6PS18012E4FG35689NWSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 729A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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2PS13512E43W39689NOSA1 Infineon-2PS13512E43W39689-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace83b16457
2PS13512E43W39689NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 900A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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BSM75GB60DLCHOSA1 Infineon-BSM75GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43486956060
BSM75GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 100A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM200GB60DLCHOSA1 Infineon-BSM200GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a30431ff98815011ffb134cba000b
BSM200GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 230A 730W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 730 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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6MS20017E43W37032NOSA1 Infineon-6MS20017E43W37032-DS-v02_00-en.pdf?fileId=db3a304336ca04c9013712101fe87e32
6MS20017E43W37032NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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6MS20017E43W38170NOSA1 Infineon-6MS20017E43W38170-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d32c1f910160
6MS20017E43W38170NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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DF120R12W2H3B27BOMA1 Infineon-DF120R12W2H3_B27-DS-v03_01-EN.pdf?fileId=db3a304340e762c80140e886ef5e0142
DF120R12W2H3B27BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+72.18 EUR
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