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BSC110N15NS5ATMA1 BSC110N15NS5ATMA1 Infineon Technologies Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Description: MOSFET N-CH 150V 76A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
auf Bestellung 27236 Stücke:
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ESD110B102ELE6327XTMA1 ESD110B102ELE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 18.5VWM 29VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 58W
Power Line Protection: No
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AUIRS21811STR AUIRS21811STR Infineon Technologies auirs21811s.pdf?fileId=5546d462533600a4015355bf609715b4 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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AUIRF7675M2TR AUIRF7675M2TR Infineon Technologies auirf7675m2.pdf?fileId=5546d462533600a4015355ad943b13f4 Description: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Qualification: AEC-Q101
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AUIRS21271STR AUIRS21271STR Infineon Technologies auirs2127s.pdf?fileId=5546d462533600a4015355bf588015b1 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Grade: Automotive
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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1000+0.17 EUR
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IPT111N20NFDATMA1 IPT111N20NFDATMA1 Infineon Technologies Infineon-IPT111N20NFD-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8b4b786fc2 Description: MOSFET N-CH 200V 96A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 3878 Stücke:
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100+7.21 EUR
500+7.01 EUR
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TLE5012BE3005XUMA1 TLE5012BE3005XUMA1 Infineon Technologies Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f Description: SPEED SENSORS 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11587 Stücke:
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5+6.16 EUR
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 Infineon Technologies Final_Datasheet_ICE2QS02G_V20_20080613_3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431a5c32f2011abef4f7fd3bc8 Description: IC OFFLINE SWITCH FLYBACK 8DSO
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 11V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 150kHz
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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PVT212S-TPBF PVT212S-TPBF Infineon Technologies pvt212.pdf?fileId=5546d462533600a4015356841646295d Description: SSR RELAY SPST-NO 550MA 0-150V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
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PVT412AS-TPBF PVT412AS-TPBF Infineon Technologies IRSDS10638-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 240 mA
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 969 Stücke:
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IPT65R033G7XTMA1 IPT65R033G7XTMA1 Infineon Technologies Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 BSC160N15NS5ATMA1 Infineon Technologies Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b Description: MOSFET N-CH 150V 56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 60µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
auf Bestellung 3418 Stücke:
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4+6.01 EUR
10+3.92 EUR
100+2.71 EUR
500+2.19 EUR
1000+2.12 EUR
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IPD80R2K8CEATMA1 IPD80R2K8CEATMA1 Infineon Technologies Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
auf Bestellung 335 Stücke:
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10+2.14 EUR
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 Infineon Technologies Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96 Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
auf Bestellung 2892 Stücke:
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BAR6503WE6327HTSA1 BAR6503WE6327HTSA1 Infineon Technologies bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Description: RF DIODE PIN 30V 250MW PG-SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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97+0.21 EUR
114+0.18 EUR
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 1419 Stücke:
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500+0.2 EUR
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BTS500151TADATMA2 BTS500151TADATMA2 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-263-7
Fault Protection: Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1293 Stücke:
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2+10.85 EUR
10+8.31 EUR
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100+6.97 EUR
250+6.7 EUR
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TLE9879QXA40XUMA2 Infineon Technologies Infineon-TLE9879QXA40-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d840096a3c2f Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-VQFN (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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10+8.07 EUR
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100+6.77 EUR
250+6.45 EUR
500+6.26 EUR
1000+6.09 EUR
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IFX1763XEJV33XUMA1 IFX1763XEJV33XUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 3.3V 500MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX54441EJV50XUMA1 IFX54441EJV50XUMA1 Infineon Technologies INFN-S-A0001300605-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 5V 300MA 8DSO E-PAD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
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IFX54441LDV33XUMA1 IFX54441LDV33XUMA1 Infineon Technologies Infineon-IFX54441-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bcac47a464f95 Description: IC REG LINEAR 3.3V 300MA TSON-10
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XDPL8105XUMA1 XDPL8105XUMA1 Infineon Technologies Infineon-XDPL8105-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158962cc1314318 Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 180kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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TLD1125ELXUMA1 TLD1125ELXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC LED DRVR LIN PWM 360MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
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TLD1311ELXUMA1 TLD1311ELXUMA1 Infineon Technologies Infineon-TLD1311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e25799a3506 Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Not For New Designs
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TLD2311ELXUMA1 TLD2311ELXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
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ESD144B1W0201E6327XTSA1 ESD144B1W0201E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 Infineon Technologies Infineon-BSS816NW-DS-v02_03-en.pdf?fileId=db3a304335113a6301351e704a2e1332 Description: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
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BTS409L1E3062ABUMA1 BTS409L1E3062ABUMA1 Infineon Technologies Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Features: Auto Restart
Packaging: Cut Tape (CT)
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BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOT 30V 200MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD25N06S4L30ATMA2 IPD25N06S4L30ATMA2 Infineon Technologies Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Description: MOSFET N-CH 60V 25A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB044N15N5ATMA1 IPB044N15N5ATMA1 Infineon Technologies Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757 Description: MOSFET N-CH 150V 174A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V
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IPN50R650CEATMA1 IPN50R650CEATMA1 Infineon Technologies Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8 Description: MOSFET N-CH 500V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Produkt ist nicht verfügbar
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 Infineon Technologies bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
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BBY5802VH6327XTSA1 BBY5802VH6327XTSA1 Infineon Technologies infineon-bby58-02v-datasheet-en.pdf Description: DIODE VARACTOR 10V SGL PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
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IPB048N15N5ATMA1 IPB048N15N5ATMA1 Infineon Technologies Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463 Description: MOSFET N-CH 150V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
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BBY5302VH6327XTSA1 BBY5302VH6327XTSA1 Infineon Technologies INFNS15715-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 6V SGL PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
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SPD04N60C3ATMA1 SPD04N60C3ATMA1 Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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EVALM1099MCTOBO1 EVALM1099MCTOBO1 Infineon Technologies EVAL-M1-099M-C_UM_Rev1.0_8-21-17.pdf Description: EVAL BOARD FOR IRMCK099M
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRMCK099M
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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MCETOOLV2 MCETOOLV2 Infineon Technologies Infineon-2017-01+MCETOOLV2+User+Manual-AN-v01_04-EN.pdf?fileId=5546d4625e5ce62d015e60ca0d9540d6 Description: IMOTION DEBUGGER
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BTS550PE3146NKSA1 Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO218-5
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T1851N60TOHXPSA1 Infineon Technologies T1851N_Rev6.0_05-02-11.pdf Description: SCR MODULE 7000V 2880A DO200AE
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T4051N85TOHXPSA1 Infineon Technologies Description: SCR MODULE T20235K-1-1
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T4161N80TOHPRXPSA1 Infineon Technologies Description: SCR MODULE T20235K-1-1
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T4301N22TOFXPSA1 Infineon Technologies Description: SCR MODULE 2900V 6330A DO200AE
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T901N32TOFXPSA1 Infineon Technologies T901N_7.0_05-02-11.pdf Description: SCR MODULE 3600V 29900A DO200AE
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IPP80N07S405AKSA1 IPP80N07S405AKSA1 Infineon Technologies IPP_B_I80N07S4-05-Data-Sheet-10-Infineon.pdf Description: MOSFET N-CH TO220-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPI80N07S405AKSA1 Infineon Technologies IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUXHMF1404ZSTRL Infineon Technologies Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSP615S2LHUMA1 BSP615S2LHUMA1 Infineon Technologies Description: MOSFET SOT223-4
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPB80N07S405ATMA1 Infineon Technologies IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ITD50N04S4L04ATMA1 Infineon Technologies Description: MOSFET N-CH TO252-5
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CY8CLED01D01-56LTXQT CY8CLED01D01-56LTXQT Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC PWR PSOC CTLR 16K 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPZA60R120P7XKSA1 IPZA60R120P7XKSA1 Infineon Technologies infineon-ipza60r120p7-ds-en.pdf Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Produkt ist nicht verfügbar
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IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 Infineon Technologies infineon-ipza60r099p7-ds-en.pdf Description: MOSFET N-CH 600V 31A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 240 Stücke:
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IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 Infineon Technologies Infineon-IPZA60R060P7-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160316b71ad645f Description: MOSFET N-CH 600V 48A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
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IPZA60R037P7XKSA1 IPZA60R037P7XKSA1 Infineon Technologies Infineon-IPZA60R037P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160314fe3b963ab Description: MOSFET N-CH 600V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
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IPB60R360P7ATMA1 IPB60R360P7ATMA1 Infineon Technologies infineon-ipb60r360p7-ds-en.pdf Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
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IPB60R280P7ATMA1 IPB60R280P7ATMA1 Infineon Technologies infineon-ipb60r280p7-ds-en.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
BSC110N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 76A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
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ESD110B102ELE6327XTMA1 fundamentals-of-power-semiconductors
ESD110B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18.5VWM 29VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 58W
Power Line Protection: No
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AUIRS21811STR auirs21811s.pdf?fileId=5546d462533600a4015355bf609715b4
AUIRS21811STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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AUIRF7675M2TR auirf7675m2.pdf?fileId=5546d462533600a4015355ad943b13f4
AUIRF7675M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Qualification: AEC-Q101
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3+7.54 EUR
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AUIRS21271STR auirs2127s.pdf?fileId=5546d462533600a4015355bf588015b1
AUIRS21271STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Grade: Automotive
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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4+6.34 EUR
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BAS7004WH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 4450 Stücke:
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32+0.67 EUR
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IPT111N20NFDATMA1 Infineon-IPT111N20NFD-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8b4b786fc2
IPT111N20NFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 96A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 3878 Stücke:
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2+13.84 EUR
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TLE5012BE3005XUMA1 Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f
TLE5012BE3005XUMA1
Hersteller: Infineon Technologies
Description: SPEED SENSORS 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11587 Stücke:
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4+6.91 EUR
5+6.16 EUR
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ICE2QS02GXUMA1 Final_Datasheet_ICE2QS02G_V20_20080613_3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431a5c32f2011abef4f7fd3bc8
ICE2QS02GXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 11V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 20kHz ~ 150kHz
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5800 Stücke:
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PVT212S-TPBF pvt212.pdf?fileId=5546d462533600a4015356841646295d
PVT212S-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 750 mOhms
Voltage - Load: 0 V ~ 150 V
Part Status: Active
Supplier Device Package: 6-SMT
Load Current: 550 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
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PVT412AS-TPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
PVT412AS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 240 mA
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 969 Stücke:
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2+11.44 EUR
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IPT65R033G7XTMA1 Infineon-IPT65R033G7-DS-v02_01-EN.pdf?fileId=5546d46253f650570154190220f14f1f
IPT65R033G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 69A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b
BSC160N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 60µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
auf Bestellung 3418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.01 EUR
10+3.92 EUR
100+2.71 EUR
500+2.19 EUR
1000+2.12 EUR
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IPD80R2K8CEATMA1 Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f
IPD80R2K8CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
auf Bestellung 335 Stücke:
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10+2.14 EUR
15+1.45 EUR
100+1.08 EUR
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IPB015N08N5ATMA1 Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96
IPB015N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
auf Bestellung 2892 Stücke:
Lieferzeit 10-14 Tag (e)
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2+14.36 EUR
10+9.71 EUR
100+7.08 EUR
500+6.63 EUR
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BAR6503WE6327HTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
BAR6503WE6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 11254 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
86+0.25 EUR
97+0.21 EUR
114+0.18 EUR
250+0.17 EUR
500+0.15 EUR
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BAS7005WH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7005WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 1419 Stücke:
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31+0.69 EUR
49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
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BTS500151TADATMA2 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-263-7
Fault Protection: Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1293 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.85 EUR
10+8.31 EUR
25+7.68 EUR
100+6.97 EUR
250+6.7 EUR
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TLE9879QXA40XUMA2 Infineon-TLE9879QXA40-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d840096a3c2f
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-VQFN (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4801 Stücke:
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2+10.53 EUR
10+8.07 EUR
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100+6.77 EUR
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500+6.26 EUR
1000+6.09 EUR
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IFX1763XEJV33XUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763XEJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 500MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX54441EJV50XUMA1 INFN-S-A0001300605-1.pdf?t.download=true&u=5oefqw
IFX54441EJV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA 8DSO E-PAD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX54441LDV33XUMA1 Infineon-IFX54441-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bcac47a464f95
IFX54441LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 300MA TSON-10
Produkt ist nicht verfügbar
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XDPL8105XUMA1 Infineon-XDPL8105-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158962cc1314318
XDPL8105XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 180kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
auf Bestellung 34555 Stücke:
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7+3.06 EUR
10+2.75 EUR
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TLD1125ELXUMA1 fundamentals-of-power-semiconductors
TLD1125ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN PWM 360MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 360mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-EP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
auf Bestellung 4988 Stücke:
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12+1.84 EUR
16+1.32 EUR
25+1.19 EUR
100+1.05 EUR
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500+0.94 EUR
1000+0.92 EUR
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TLD1311ELXUMA1 Infineon-TLD1311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e25799a3506
TLD1311ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLD2311ELXUMA1 fundamentals-of-power-semiconductors
TLD2311ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
auf Bestellung 4907 Stücke:
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11+1.99 EUR
15+1.43 EUR
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1000+1 EUR
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ESD144B1W0201E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD144B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.07 EUR
30000+0.064 EUR
45000+0.061 EUR
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BSS816NWH6327XTSA1 Infineon-BSS816NW-DS-v02_03-en.pdf?fileId=db3a304335113a6301351e704a2e1332
BSS816NWH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 60378 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.17 EUR
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BTS409L1E3062ABUMA1 Infineon-BTS409L1%20E3062A-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9b0a1b7361a
BTS409L1E3062ABUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Features: Auto Restart
Packaging: Cut Tape (CT)
auf Bestellung 118 Stücke:
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4+6.07 EUR
10+4.56 EUR
25+4.18 EUR
100+3.77 EUR
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BAT5403WE6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5403WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOT 30V 200MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12830 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.17 EUR
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BAT5402VH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5402VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
110+0.19 EUR
138+0.15 EUR
500+0.13 EUR
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IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
IPD25N06S4L30ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 25A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11097 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
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IPB044N15N5ATMA1 Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757
IPB044N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 174A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 75 V
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.33 EUR
10+6.9 EUR
100+4.96 EUR
500+4.87 EUR
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IPN50R650CEATMA1 Infineon-IPN50R650CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae9265ad8
IPN50R650CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Produkt ist nicht verfügbar
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BFR182WH6327XTSA1 bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c
BFR182WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 2149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
55+0.38 EUR
62+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 39 Stücke
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BBY5802VH6327XTSA1 infineon-bby58-02v-datasheet-en.pdf
BBY5802VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 10V SGL PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
auf Bestellung 73643 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
56+0.38 EUR
100+0.36 EUR
500+0.33 EUR
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IPB048N15N5ATMA1 Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463
IPB048N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
10+6.87 EUR
100+4.91 EUR
500+4.43 EUR
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BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
BBY5302VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 6V SGL PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
auf Bestellung 11653 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
29+0.73 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 22 Stücke
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SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
SPD04N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 1927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.18 EUR
10+3.32 EUR
100+2.27 EUR
500+1.82 EUR
1000+1.68 EUR
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EVALM1099MCTOBO1 EVAL-M1-099M-C_UM_Rev1.0_8-21-17.pdf
EVALM1099MCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRMCK099M
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRMCK099M
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+102.98 EUR
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MCETOOLV2 Infineon-2017-01+MCETOOLV2+User+Manual-AN-v01_04-EN.pdf?fileId=5546d4625e5ce62d015e60ca0d9540d6
MCETOOLV2
Hersteller: Infineon Technologies
Description: IMOTION DEBUGGER
auf Bestellung 16 Stücke:
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AnzahlPrivatkunde
1+209.55 EUR
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BTS550PE3146NKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO218-5
Produkt ist nicht verfügbar
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T1851N60TOHXPSA1 T1851N_Rev6.0_05-02-11.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 7000V 2880A DO200AE
Produkt ist nicht verfügbar
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T4051N85TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE T20235K-1-1
Produkt ist nicht verfügbar
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T4161N80TOHPRXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE T20235K-1-1
Produkt ist nicht verfügbar
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T4301N22TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2900V 6330A DO200AE
Produkt ist nicht verfügbar
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T901N32TOFXPSA1 T901N_7.0_05-02-11.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 3600V 29900A DO200AE
Produkt ist nicht verfügbar
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IPP80N07S405AKSA1 IPP_B_I80N07S4-05-Data-Sheet-10-Infineon.pdf
IPP80N07S405AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO220-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPI80N07S405AKSA1 IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUXHMF1404ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSP615S2LHUMA1
BSP615S2LHUMA1
Hersteller: Infineon Technologies
Description: MOSFET SOT223-4
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPB80N07S405ATMA1 IP%28B%2CI%2CP%2980N07S4-05_Rev1.0_07-14-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO263-3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ITD50N04S4L04ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH TO252-5
Produkt ist nicht verfügbar
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CY8CLED01D01-56LTXQT CY8CLED0x%28D%2CG%290x.pdf
CY8CLED01D01-56LTXQT
Hersteller: Infineon Technologies
Description: IC PWR PSOC CTLR 16K 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPZA60R120P7XKSA1 infineon-ipza60r120p7-ds-en.pdf
IPZA60R120P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Produkt ist nicht verfügbar
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IPZA60R099P7XKSA1 infineon-ipza60r099p7-ds-en.pdf
IPZA60R099P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.23 EUR
30+6.96 EUR
120+5.8 EUR
Mindestbestellmenge: 2 Stücke
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IPZA60R060P7XKSA1 Infineon-IPZA60R060P7-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160316b71ad645f
IPZA60R060P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
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IPZA60R037P7XKSA1 Infineon-IPZA60R037P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160314fe3b963ab
IPZA60R037P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.52 EUR
30+10.83 EUR
120+9.72 EUR
Mindestbestellmenge: 2 Stücke
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IPB60R360P7ATMA1 infineon-ipb60r360p7-ds-en.pdf
IPB60R360P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.46 EUR
2000+1.36 EUR
Mindestbestellmenge: 1000 Stücke
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IPB60R280P7ATMA1 infineon-ipb60r280p7-ds-en.pdf
IPB60R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.75 EUR
2000+1.62 EUR
3000+1.56 EUR
5000+1.49 EUR
Mindestbestellmenge: 1000 Stücke
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