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V501445S3HPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 42MM HOUSINGS
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V501460MHPSA1 V501460MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
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V501460NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7 Description: CLAMP DISK DEVICES 42MM HOUSINGS
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V7214150MHPSA1 Infineon Technologies Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79 Description: CLAMP DISK DEVICES 58MM HOUSINGS
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V8926120NHPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 75MM HOUSINGS
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V8926170NHPSA1 Infineon Technologies V89.pdf Description: CLAMP DISK DEVICES 75MM HOUSINGS
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V8926400NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27 Description: CLAMP DISK DEVICES 75MM HOUSINGS
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D1251S45TXPSA1 D1251S45TXPSA1 Infineon Technologies Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Description: DIODE GEN PURP 4.5KV 1530A
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D126A45CXPSA1 Infineon Technologies Description: DIODE GEN PURP 4.5KV 200A
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DD81S14KHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE MODULE GP 1400V 96A
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DD81S14KAHPSA1 Infineon Technologies Description: DIODE ARRAY MOD 1000V 150A
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DD81S14KKHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE ARRAY MOD 1000V 150A
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DD1000S33HE3BPSA1 DD1000S33HE3BPSA1 Infineon Technologies Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
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DD500S33HE3BPSA1 DD500S33HE3BPSA1 Infineon Technologies Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796 Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
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DDB6U104N16RRBOSA1 DDB6U104N16RRBOSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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DDB6U144N16RBOSA1 DDB6U144N16RBOSA1 Infineon Technologies INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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D8320N02TVFXPSA1 Infineon Technologies D8320N.pdf Description: DIODE GEN PURP 200V 8320A
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D850N30TXPSA1 D850N30TXPSA1 Infineon Technologies D850N.pdf Description: DIODE GEN PURP 3KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3000 V
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D56U40CXPSA1 D56U40CXPSA1 Infineon Technologies D56S,U.pdf Description: DIODE GEN PURP 4KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
Produkt ist nicht verfügbar
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D56U45CPRXPSA1 D56U45CPRXPSA1 Infineon Technologies D56S,U.pdf Description: DIODE GP 4.5KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
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D452N14EXPSA1 Infineon Technologies D452N.pdf Description: DIODE GEN PURP 1.4KV 450A FL54
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D452N18EXPSA1 Infineon Technologies D452N.pdf Description: DIODE RECTIFIER 1200V 710A
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D452N18EVFXPSA1 D452N18EVFXPSA1 Infineon Technologies D452N.pdf Description: DIODE GEN PURP 1.8KV 450A FL54
Packaging: Bulk
Package / Case: Nonstandard
Mounting Type: Screw Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: FL54
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
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D970N02TXPSA1 D970N02TXPSA1 Infineon Technologies D970N.pdf Description: DIODE GEN PURP 200V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 200 V
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D970N04TXPSA1 Infineon Technologies D970N.pdf Description: DIODE GEN PURP 400V 970A
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D970N08TXPSA1 D970N08TXPSA1 Infineon Technologies D970N.pdf Description: DIODE STANDARD 800V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
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D4401N20T D4401N20T Infineon Technologies Description: DIODE RECTIFIER 2200V 4240A
Packaging: Bulk
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D475N36BXPSA1 D475N36BXPSA1 Infineon Technologies D475N.pdf Description: DIODE GEN PURP 3.6KV 475A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 475A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Current - Reverse Leakage @ Vr: 40 mA @ 3600 V
Produkt ist nicht verfügbar
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D721S35TXPSA1 Infineon Technologies D721S.pdf Description: DIODE RECTIFIER 3500V 600A
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D721S45TXPSA1 Infineon Technologies D721S.pdf Description: DIODE GEN PURP 4.5KV 1080A
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D721S45TPRXPSA1 Infineon Technologies D721S.pdf Description: DIODE RECTIFIER 3500V 600A
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D650N06TXPSA1 D650N06TXPSA1 Infineon Technologies Infineon-D650N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5c46e180069 Description: DIODE STANDARD 600V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Produkt ist nicht verfügbar
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D450S20TXPSA1 D450S20TXPSA1 Infineon Technologies D450S.pdf Description: DIODE GEN PURP 2KV 443A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.2 µs
Technology: Standard
Current - Average Rectified (Io): 443A
Operating Temperature - Junction: -25°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
Current - Reverse Leakage @ Vr: 10 mA @ 2000 V
Produkt ist nicht verfügbar
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6PS04512E43G37986NOSA1 Infineon Technologies Infineon-6PS04512E43G37986-DS-v02_02-en.pdf?fileId=db3a30433ff796e70140063e44e85e06 Description: IGBT MODULE 400V 217A
Produkt ist nicht verfügbar
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6PS18012E4FG35689NWSA1 6PS18012E4FG35689NWSA1 Infineon Technologies Infineon-6PS18012E4FG35689-DS-v02_00-en.pdf?fileId=db3a3043382e8373013895984af41682 Description: IGBT MODULE 1200V 729A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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2PS13512E43W39689NOSA1 2PS13512E43W39689NOSA1 Infineon Technologies Infineon-2PS13512E43W39689-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace83b16457 Description: IGBT MODULE 1200V 900A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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BSM75GB60DLCHOSA1 BSM75GB60DLCHOSA1 Infineon Technologies Infineon-BSM75GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43486956060 Description: IGBT MOD 600V 100A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM200GB60DLCHOSA1 BSM200GB60DLCHOSA1 Infineon Technologies Infineon-BSM200GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a30431ff98815011ffb134cba000b Description: IGBT MOD 600V 230A 730W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 730 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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6MS20017E43W37032NOSA1 6MS20017E43W37032NOSA1 Infineon Technologies Infineon-6MS20017E43W37032-DS-v02_00-en.pdf?fileId=db3a304336ca04c9013712101fe87e32 Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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6MS20017E43W38170NOSA1 6MS20017E43W38170NOSA1 Infineon Technologies Infineon-6MS20017E43W38170-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d32c1f910160 Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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DF120R12W2H3B27BOMA1 DF120R12W2H3B27BOMA1 Infineon Technologies Infineon-DF120R12W2H3_B27-DS-v03_01-EN.pdf?fileId=db3a304340e762c80140e886ef5e0142 Description: IGBT MOD 1200V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.24 EUR
15+46.13 EUR
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FF1200R12KE3NOSA1 FF1200R12KE3NOSA1 Infineon Technologies Infineon-FF1200R12KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b43415c65f7e Description: IGBT MODULE 1200V 5000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 86 nF @ 25 V
Produkt ist nicht verfügbar
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DF1400R12IP4DBOSA1 DF1400R12IP4DBOSA1 Infineon Technologies Infineon-DF1400R12IP4D-DS-v02_02-en_de.pdf?fileId=db3a30431ddc9372011e398afc1a5e4a Description: IGBT MOD 1200V 1400A 7700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
Produkt ist nicht verfügbar
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DF150R12RT4HOSA1 DF150R12RT4HOSA1 Infineon Technologies Infineon-DF150R12RT4-DS-v02_02-en_de.pdf?fileId=db3a304327b89750012805d5d8646118 Description: IGBT MOD 1200V 150A 790W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 790 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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DF160R12W2H3_B11 Infineon Technologies Description: IGBT MODULE VCES 1200V 150A
Produkt ist nicht verfügbar
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FF150R12KE3GHOSA1 FF150R12KE3GHOSA1 Infineon Technologies FF150R12KE3G.pdf Description: IGBT MOD 1200V 225A 780W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+161.11 EUR
10+134.24 EUR
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FF150R12KT3GHOSA1 FF150R12KT3GHOSA1 Infineon Technologies Infineon-FF150R12KT3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43416bb5f82 Description: IGBT MOD 1200V 225A 780W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+167.6 EUR
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FF150R12ME3GBOSA1 FF150R12ME3GBOSA1 Infineon Technologies Infineon-FF150R12ME3G-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43461c76021 Description: IGBT MOD 1200V 200A 695W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Produkt ist nicht verfügbar
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F3L15R12W2H3B27BOMA1 F3L15R12W2H3B27BOMA1 Infineon Technologies Infineon-F3L15R12W2H3_B27-DS-v02_00-en_de.pdf?fileId=db3a304340e762c80140e8b1561601c8 Description: IGBT MOD 1200V 20A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 875 pF @ 25 V
Produkt ist nicht verfügbar
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FD200R12PT4B6BOSA1 FD200R12PT4B6BOSA1 Infineon Technologies Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0 Description: IGBT MOD 1200V 300A 1100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 Infineon Technologies Infineon-FF200R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b433b54b5d49 Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
1+212.15 EUR
10+183.38 EUR
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Infineon Technologies Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88 Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
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FF200R33KF2CNOSA1 FF200R33KF2CNOSA1 Infineon Technologies Infineon-FF200R33KF2C-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b430ea405267 Description: IGBT MOD 3300V 330A 2200W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Produkt ist nicht verfügbar
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FF225R12ME4BOSA1 FF225R12ME4BOSA1 Infineon Technologies Infineon-FF225R12ME4-DS-v03_02-en_de.pdf?fileId=db3a30431a5c32f2011a768d9f6e6c3e Description: IGBT MOD 1200V 320A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
1+161.22 EUR
10+134.35 EUR
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FP35R12KT4BOSA1 FP35R12KT4BOSA1 Infineon Technologies Infineon-FP35R12KT4-DS-v02_00-en_de.pdf?fileId=db3a304316f66ee801174440e4132f81 Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP35R12KT4B15BOSA1 FP35R12KT4B15BOSA1 Infineon Technologies Infineon-FP35R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30432313ff5e01237ada8baf7c60 Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12KT3BOSA1 FP25R12KT3BOSA1 Infineon Technologies Infineon-FP25R12KT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4316c90543e Description: IGBT MOD 1200V 40A 155W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12KT4BOSA1 FP25R12KT4BOSA1 Infineon Technologies Infineon-FP25R12KT4-DS-v03_00-en_de.pdf?fileId=db3a30431ed1d7b2011f697849180e4c Description: IGBT MOD 1200V 25A 160W
Produkt ist nicht verfügbar
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FP25R12W2T4BOMA1 FP25R12W2T4BOMA1 Infineon Technologies Infineon-FP25R12W2T4-DS-v02_02-en_de.pdf?fileId=db3a3043163797a60116389cdaeb0183 Description: IGBT MOD 1200V 39A 175W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Produkt ist nicht verfügbar
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FP40R12KE3BOSA1 FP40R12KE3BOSA1 Infineon Technologies Infineon-FP40R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a9dc5189 Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
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V501445S3HPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
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V501460MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
V501460MHPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.55 EUR
5+110.83 EUR
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V501460NHPSA1 Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
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V7214150MHPSA1 Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Produkt ist nicht verfügbar
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V8926120NHPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Produkt ist nicht verfügbar
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V8926170NHPSA1 V89.pdf
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Produkt ist nicht verfügbar
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V8926400NHPSA1 Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Produkt ist nicht verfügbar
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D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
D1251S45TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1530A
Produkt ist nicht verfügbar
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D126A45CXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 200A
Produkt ist nicht verfügbar
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DD81S14KHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1400V 96A
Produkt ist nicht verfügbar
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DD81S14KAHPSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
Produkt ist nicht verfügbar
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DD81S14KKHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Hersteller: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
Produkt ist nicht verfügbar
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DD1000S33HE3BPSA1 Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279
DD1000S33HE3BPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1650.95 EUR
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DD500S33HE3BPSA1 Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796
DD500S33HE3BPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1499.33 EUR
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DDB6U104N16RRBOSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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DDB6U144N16RBOSA1 INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw
DDB6U144N16RBOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+137.21 EUR
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D8320N02TVFXPSA1 D8320N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 8320A
Produkt ist nicht verfügbar
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D850N30TXPSA1 D850N.pdf
D850N30TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3000 V
Produkt ist nicht verfügbar
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D56U40CXPSA1 D56S,U.pdf
D56U40CXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
Produkt ist nicht verfügbar
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D56U45CPRXPSA1 D56S,U.pdf
D56U45CPRXPSA1
Hersteller: Infineon Technologies
Description: DIODE GP 4.5KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
Produkt ist nicht verfügbar
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D452N14EXPSA1 D452N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 450A FL54
Produkt ist nicht verfügbar
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D452N18EXPSA1 D452N.pdf
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 1200V 710A
Produkt ist nicht verfügbar
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D452N18EVFXPSA1 D452N.pdf
D452N18EVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 450A FL54
Packaging: Bulk
Package / Case: Nonstandard
Mounting Type: Screw Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: FL54
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
Produkt ist nicht verfügbar
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D970N02TXPSA1 D970N.pdf
D970N02TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 200 V
Produkt ist nicht verfügbar
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D970N04TXPSA1 D970N.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 400V 970A
Produkt ist nicht verfügbar
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D970N08TXPSA1 D970N.pdf
D970N08TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 800V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
D4401N20T
D4401N20T
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 2200V 4240A
Packaging: Bulk
Produkt ist nicht verfügbar
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D475N36BXPSA1 D475N.pdf
D475N36BXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 475A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 475A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Current - Reverse Leakage @ Vr: 40 mA @ 3600 V
Produkt ist nicht verfügbar
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D721S35TXPSA1 D721S.pdf
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 3500V 600A
Produkt ist nicht verfügbar
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D721S45TXPSA1 D721S.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1080A
Produkt ist nicht verfügbar
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D721S45TPRXPSA1 D721S.pdf
Hersteller: Infineon Technologies
Description: DIODE RECTIFIER 3500V 600A
Produkt ist nicht verfügbar
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D650N06TXPSA1 Infineon-D650N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5c46e180069
D650N06TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Produkt ist nicht verfügbar
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D450S20TXPSA1 D450S.pdf
D450S20TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2KV 443A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.2 µs
Technology: Standard
Current - Average Rectified (Io): 443A
Operating Temperature - Junction: -25°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 1200 A
Current - Reverse Leakage @ Vr: 10 mA @ 2000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6PS04512E43G37986NOSA1 Infineon-6PS04512E43G37986-DS-v02_02-en.pdf?fileId=db3a30433ff796e70140063e44e85e06
Hersteller: Infineon Technologies
Description: IGBT MODULE 400V 217A
Produkt ist nicht verfügbar
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6PS18012E4FG35689NWSA1 Infineon-6PS18012E4FG35689-DS-v02_00-en.pdf?fileId=db3a3043382e8373013895984af41682
6PS18012E4FG35689NWSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 729A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2PS13512E43W39689NOSA1 Infineon-2PS13512E43W39689-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace83b16457
2PS13512E43W39689NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 900A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSM75GB60DLCHOSA1 Infineon-BSM75GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43486956060
BSM75GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 100A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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BSM200GB60DLCHOSA1 Infineon-BSM200GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a30431ff98815011ffb134cba000b
BSM200GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 230A 730W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 730 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6MS20017E43W37032NOSA1 Infineon-6MS20017E43W37032-DS-v02_00-en.pdf?fileId=db3a304336ca04c9013712101fe87e32
6MS20017E43W37032NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6MS20017E43W38170NOSA1 Infineon-6MS20017E43W38170-DS-v02_00-en.pdf?fileId=db3a304339d29c450139d32c1f910160
6MS20017E43W38170NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF120R12W2H3B27BOMA1 Infineon-DF120R12W2H3_B27-DS-v03_01-EN.pdf?fileId=db3a304340e762c80140e886ef5e0142
DF120R12W2H3B27BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+64.24 EUR
15+46.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF1200R12KE3NOSA1 Infineon-FF1200R12KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b43415c65f7e
FF1200R12KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 5000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 86 nF @ 25 V
Produkt ist nicht verfügbar
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DF1400R12IP4DBOSA1 Infineon-DF1400R12IP4D-DS-v02_02-en_de.pdf?fileId=db3a30431ddc9372011e398afc1a5e4a
DF1400R12IP4DBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1400A 7700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 7700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
Produkt ist nicht verfügbar
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DF150R12RT4HOSA1 Infineon-DF150R12RT4-DS-v02_02-en_de.pdf?fileId=db3a304327b89750012805d5d8646118
DF150R12RT4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 790W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 790 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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DF160R12W2H3_B11
Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 1200V 150A
Produkt ist nicht verfügbar
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FF150R12KE3GHOSA1 FF150R12KE3G.pdf
FF150R12KE3GHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+161.11 EUR
10+134.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF150R12KT3GHOSA1 Infineon-FF150R12KT3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43416bb5f82
FF150R12KT3GHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+167.6 EUR
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FF150R12ME3GBOSA1 Infineon-FF150R12ME3G-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43461c76021
FF150R12ME3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Produkt ist nicht verfügbar
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F3L15R12W2H3B27BOMA1 Infineon-F3L15R12W2H3_B27-DS-v02_00-en_de.pdf?fileId=db3a304340e762c80140e8b1561601c8
F3L15R12W2H3B27BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 875 pF @ 25 V
Produkt ist nicht verfügbar
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FD200R12PT4B6BOSA1 Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0
FD200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 Infineon-FF200R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b433b54b5d49
FF200R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+212.15 EUR
10+183.38 EUR
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FF200R12KT3EHOSA1 Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88
FF200R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
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FF200R33KF2CNOSA1 Infineon-FF200R33KF2C-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b430ea405267
FF200R33KF2CNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 330A 2200W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Produkt ist nicht verfügbar
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FF225R12ME4BOSA1 Infineon-FF225R12ME4-DS-v03_02-en_de.pdf?fileId=db3a30431a5c32f2011a768d9f6e6c3e
FF225R12ME4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 320A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+161.22 EUR
10+134.35 EUR
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FP35R12KT4BOSA1 Infineon-FP35R12KT4-DS-v02_00-en_de.pdf?fileId=db3a304316f66ee801174440e4132f81
FP35R12KT4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP35R12KT4B15BOSA1 Infineon-FP35R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30432313ff5e01237ada8baf7c60
FP35R12KT4B15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12KT3BOSA1 Infineon-FP25R12KT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4316c90543e
FP25R12KT3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 155W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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FP25R12KT4BOSA1 Infineon-FP25R12KT4-DS-v03_00-en_de.pdf?fileId=db3a30431ed1d7b2011f697849180e4c
FP25R12KT4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 160W
Produkt ist nicht verfügbar
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FP25R12W2T4BOMA1 Infineon-FP25R12W2T4-DS-v02_02-en_de.pdf?fileId=db3a3043163797a60116389cdaeb0183
FP25R12W2T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 39A 175W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Produkt ist nicht verfügbar
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FP40R12KE3BOSA1 Infineon-FP40R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a9dc5189
FP40R12KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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