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SLE66R35IMCC8XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35MCC8IXHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC2XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC8IXHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC8XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SRF55V02PHCMCC2ZZZA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V02PMCC8XHSA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V02SMCC8ZZZA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V10PMCC8XHSA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V10SMCC8ZZZA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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1EDI2010ASXUMA1 1EDI2010ASXUMA1 Infineon Technologies 1EDI2010AS-ISO-DS-v02_10.pdf Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 120ns, 150ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Grade: Automotive
Qualification: AEC-Q100
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2EDN7424FXTMA1 2EDN7424FXTMA1 Infineon Technologies Infineon-2EDN7424F-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e4ef0083f67 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDN7424RXUMA1 2EDN7424RXUMA1 Infineon Technologies Infineon-2EDN7424R-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e5812b13f6b Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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AIHD03N60RFATMA1 AIHD03N60RFATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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AIHD04N60RATMA1 AIHD04N60RATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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AIHD06N60RATMA1 AIHD06N60RATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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AIHD06N60RFATMA1 AIHD06N60RFATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 8ns/105ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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AIHD10N60RATMA1 Infineon Technologies Infineon-AIHD10N60R-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e26d7caf Description: IC DISCRETE 600V TO252-3
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AIHD10N60RFATMA1 Infineon Technologies Infineon-AIHD10N60RF-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e7cf7cb1 Description: IC DISCRETE 600V TO252-3
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AIHD15N60RATMA1 AIHD15N60RATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
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AIHD15N60RFATMA1 AIHD15N60RFATMA1 Infineon Technologies Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
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AIKB20N60CTATMA1 AIKB20N60CTATMA1 Infineon Technologies Infineon-AIKB20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382a94c7c95 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
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2000+3.07 EUR
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AUIRS1170STR AUIRS1170STR Infineon Technologies Infineon-AUIRS1170S-DS-v02_30-EN.pdf?fileId=5546d46259d9a4bf0159da788eef0681 Description: IC GATE DRIVER 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
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BSC0993NDATMA1 BSC0993NDATMA1 Infineon Technologies Infineon-BSC0993ND-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598dddfb2c616c Description: MOSFET 2N-CH 17A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Not For New Designs
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BSC13DN30NSFDATMA1 BSC13DN30NSFDATMA1 Infineon Technologies Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a Description: MOSFET N-CH 300V 16A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 150 V
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BSC350N20NSFDATMA1 BSC350N20NSFDATMA1 Infineon Technologies Infineon-BSC350N20NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d6094ce00ea0 Description: MOSFET N-CH 200V 35A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 100 V
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BSC670N25NSFDATMA1 BSC670N25NSFDATMA1 Infineon Technologies Infineon-BSC670N25NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d61b96e90ee7 Description: MOSFET N-CH 250V 24A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
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BSZ0589NSATMA1 BSZ0589NSATMA1 Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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BTS3125EJXUMA1 BTS3125EJXUMA1 Infineon Technologies Infineon-BTS3125EJ-DS-v01_00-EN.pdf?fileId=5546d462576f34750157bea1db0c43fd Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 31V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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3000+0.66 EUR
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BTT60302EKBXUMA1 BTT60302EKBXUMA1 Infineon Technologies BTT6030-2EKB.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
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ESD233B1W0201E6327XTSA1 ESD233B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD233-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93607634882 Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
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ESD237B1W0201E6327XTSA1 ESD237B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD237-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce9486a10488e Description: TVS DIODE 8VWM 17VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 85°C
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 42W
Power Line Protection: No
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 Infineon Technologies Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569 Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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2000+1.94 EUR
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ICE5QR0680AGXUMA1 ICE5QR0680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES 12SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
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ICE5QR4770AGXUMA1 ICE5QR4770AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
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IDP2321XUMA1 Infineon Technologies Description: IC AC/DC DGTL PLATFORM 16SOIC
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IPB017N10N5LFATMA1 IPB017N10N5LFATMA1 Infineon Technologies Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
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IPB020N10N5LFATMA1 IPB020N10N5LFATMA1 Infineon Technologies Infineon-IPB020N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b253d4c3c67 Description: MOSFET N-CH 100V 176A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
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IPB033N10N5LFATMA1 IPB033N10N5LFATMA1 Infineon Technologies Infineon-IPB033N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b2555273c6a Description: MOSFET N-CH 100V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V
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IPB110N20N3LFATMA1 IPB110N20N3LFATMA1 Infineon Technologies Infineon-IPB110N20N3LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b256a953c6d Description: MOSFET N-CH 200V 88A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 260µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
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IPC100N04S52R8ATMA1 IPC100N04S52R8ATMA1 Infineon Technologies Infineon-IPC100N04S5-2R8-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801b9b92904 Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPC100N04S5L2R6ATMA1 IPC100N04S5L2R6ATMA1 Infineon Technologies Infineon-IPC100N04S5L-2R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801c9332907 Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPL70R2K1CESATMA1 Infineon Technologies Infineon-IPN70R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462580663ef015825731b81712d Description: MOSFET COOLMOS 700V 8TSON
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
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IR38060MBC01TRP IR38060MBC01TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Tape & Reel (TR)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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SP4001110XTMA1 Infineon Technologies Description: IC TPMS & INERTIA 24DSOSP
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TC213S8F133FABKXUMA1 TC213S8F133FABKXUMA1 Infineon Technologies Description: IC MCU 32BIT 512KB FLASH 100TQFP
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TC214L8F133FABKXUMA1 TC214L8F133FABKXUMA1 Infineon Technologies Infineon-TC21xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed76015697c45d1628b0 Description: IC MCU 32BIT 512KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
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TC214S8F133FABKXUMA1 TC214S8F133FABKXUMA1 Infineon Technologies Infineon-TC21xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed76015697c45d1628b0 Description: IC MCU 32BIT 512KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
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TC222L16F133FABKXUMA1 TC222L16F133FABKXUMA1 Infineon Technologies Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048 Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
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TC224S16F133FABKXUMA1 TC224S16F133FABKXUMA1 Infineon Technologies Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048 Description: IC MCU 32BIT 1MB FLASH 144TQFP
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TC233LP32F200NACKXUMA1 TC233LP32F200NACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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TC234LP32F200FACKXUMA1 TC234LP32F200FACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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TC237L32F200SACKXUMA1 TC237L32F200SACKXUMA1 Infineon Technologies Infineon-Power_and_Sensing_Selection_Guide_2019-SG-v00_00-EN.pdf?fileId=5546d4625607bd13015621522aa012cb Description: IC MCU 32BIT 2MB FLASH
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TC264D40F200NBCKXUMA1 TC264D40F200NBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
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TC264DA40F200NBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
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TC277TP64F200NDCKXUMA1 TC277TP64F200NDCKXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC299TP128F300NBCLXUMA1 TC299TP128F300NBCLXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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TDA21240AUMA1 TDA21240AUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 40A 30IQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 30-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: Power MOSFET
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-IQFN-30-2
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
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TDA21241AUMA1 TDA21241AUMA1 Infineon Technologies Infineon-TDA21241-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aae14aec24c69 Description: IC HALF BRIDGE DRIVER 35A 30IQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 30-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters
Current - Output / Channel: 35A
Technology: Power MOSFET
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-IQFN-30-2
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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SLE66R35IMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35MCC8IXHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC2XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC8IXHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
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SRF55V02PHCMCC2ZZZA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V02PMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V02SMCC8ZZZA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V10PMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V10SMCC8ZZZA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
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1EDI2010ASXUMA1 1EDI2010AS-ISO-DS-v02_10.pdf
1EDI2010ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 120ns, 150ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+9.66 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
2EDN7424FXTMA1 Infineon-2EDN7424F-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e4ef0083f67
2EDN7424FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
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2EDN7424RXUMA1 Infineon-2EDN7424R-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e5812b13f6b
2EDN7424RXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIHD03N60RFATMA1
AIHD03N60RFATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
Produkt ist nicht verfügbar
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AIHD04N60RATMA1
AIHD04N60RATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1
AIHD04N60RFATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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AIHD06N60RATMA1
AIHD06N60RATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIHD06N60RFATMA1
AIHD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 8ns/105ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIHD10N60RATMA1 Infineon-AIHD10N60R-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e26d7caf
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD10N60RFATMA1 Infineon-AIHD10N60RF-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e7cf7cb1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD15N60RATMA1
AIHD15N60RATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1
AIHD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Produkt ist nicht verfügbar
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AIKB20N60CTATMA1 Infineon-AIKB20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382a94c7c95
AIKB20N60CTATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.14 EUR
2000+3.07 EUR
Mindestbestellmenge: 1000
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AUIRS1170STR Infineon-AUIRS1170S-DS-v02_30-EN.pdf?fileId=5546d46259d9a4bf0159da788eef0681
AUIRS1170STR
Hersteller: Infineon Technologies
Description: IC GATE DRIVER 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSC0993NDATMA1 Infineon-BSC0993ND-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598dddfb2c616c
BSC0993NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 17A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.67 EUR
Mindestbestellmenge: 5000
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BSC13DN30NSFDATMA1 Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a
BSC13DN30NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 16A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 150 V
Produkt ist nicht verfügbar
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BSC350N20NSFDATMA1 Infineon-BSC350N20NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d6094ce00ea0
BSC350N20NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 35A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 100 V
Produkt ist nicht verfügbar
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BSC670N25NSFDATMA1 Infineon-BSC670N25NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d61b96e90ee7
BSC670N25NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 24A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.29 EUR
Mindestbestellmenge: 5000
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BSZ0589NSATMA1 Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0
BSZ0589NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
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BTS3125EJXUMA1 Infineon-BTS3125EJ-DS-v01_00-EN.pdf?fileId=5546d462576f34750157bea1db0c43fd
BTS3125EJXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 31V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
Mindestbestellmenge: 3000
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BTT60302EKBXUMA1 BTT6030-2EKB.pdf
BTT60302EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ESD233B1W0201E6327XTSA1 Infineon-ESD233-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93607634882
ESD233B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD237B1W0201E6327XTSA1 Infineon-ESD237-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce9486a10488e
ESD237B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 8VWM 17VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 85°C
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 42W
Power Line Protection: No
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569
IAUT165N08S5N029ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.94 EUR
Mindestbestellmenge: 2000
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ICE5QR0680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC CTLR QUASI-RES 12SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QR4770AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Produkt ist nicht verfügbar
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IDP2321XUMA1
Hersteller: Infineon Technologies
Description: IC AC/DC DGTL PLATFORM 16SOIC
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
IPB017N10N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.22 EUR
Mindestbestellmenge: 1000
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IPB020N10N5LFATMA1 Infineon-IPB020N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b253d4c3c67
IPB020N10N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 176A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.66 EUR
Mindestbestellmenge: 1000
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IPB033N10N5LFATMA1 Infineon-IPB033N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b2555273c6a
IPB033N10N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V
Produkt ist nicht verfügbar
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IPB110N20N3LFATMA1 Infineon-IPB110N20N3LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b256a953c6d
IPB110N20N3LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 260µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.03 EUR
Mindestbestellmenge: 1000
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IPC100N04S52R8ATMA1 Infineon-IPC100N04S5-2R8-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801b9b92904
IPC100N04S52R8ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPC100N04S5L2R6ATMA1 Infineon-IPC100N04S5L-2R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801c9332907
IPC100N04S5L2R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.64 EUR
Mindestbestellmenge: 5000
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IPL70R2K1CESATMA1 Infineon-IPN70R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462580663ef015825731b81712d
Hersteller: Infineon Technologies
Description: MOSFET COOLMOS 700V 8TSON
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Produkt ist nicht verfügbar
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IR38060MBC01TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
IR38060MBC01TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Tape & Reel (TR)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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SP4001110XTMA1
Hersteller: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Produkt ist nicht verfügbar
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TC213S8F133FABKXUMA1
TC213S8F133FABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Produkt ist nicht verfügbar
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TC214L8F133FABKXUMA1 Infineon-TC21xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed76015697c45d1628b0
TC214L8F133FABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC214S8F133FABKXUMA1 Infineon-TC21xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed76015697c45d1628b0
TC214S8F133FABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC222L16F133FABKXUMA1 Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048
TC222L16F133FABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC224S16F133FABKXUMA1 Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048
TC224S16F133FABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144TQFP
Produkt ist nicht verfügbar
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TC233LP32F200NACKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200NACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+15.29 EUR
Mindestbestellmenge: 1000
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TC234LP32F200FACKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC234LP32F200FACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC237L32F200SACKXUMA1 Infineon-Power_and_Sensing_Selection_Guide_2019-SG-v00_00-EN.pdf?fileId=5546d4625607bd13015621522aa012cb
TC237L32F200SACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH
Produkt ist nicht verfügbar
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TC264D40F200NBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC264D40F200NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Produkt ist nicht verfügbar
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TC264DA40F200NBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Produkt ist nicht verfügbar
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TC277TP64F200NDCKXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC277TP64F200NDCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+59.56 EUR
Mindestbestellmenge: 1000
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TC299TP128F300NBCLXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC299TP128F300NBCLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA21240AUMA1
TDA21240AUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 40A 30IQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 30-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: Power MOSFET
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-IQFN-30-2
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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TDA21241AUMA1 Infineon-TDA21241-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aae14aec24c69
TDA21241AUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 35A 30IQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 30-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7V
Applications: Synchronous Buck Converters
Current - Output / Channel: 35A
Technology: Power MOSFET
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-IQFN-30-2
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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