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IPB65R045C7ATMA2 INFINEON TECHNOLOGIES Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 227W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 93nC
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
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1000+8.79 EUR
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BSP324H6327XTSA1 BSP324H6327XTSA1 INFINEON TECHNOLOGIES BSP324H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
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95+0.76 EUR
145+0.49 EUR
200+0.44 EUR
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IRFSL4510PBF IRFSL4510PBF INFINEON TECHNOLOGIES IRFSL4510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRF150P220AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY8C4146AZI-S423 INFINEON TECHNOLOGIES Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 48MHz; LQFP48; 64kBFLASH; ARM
Type of integrated circuit: ARM microcontroller
Clock frequency: 48MHz
Case: LQFP48
Memory: 64kB FLASH
Number of inputs/outputs: 36
Number of PWM channels: 5
Number of 16bit timers: 16
Mounting: SMD
Interface: I2C; IrDA; LIN; SPI; UART; USART
Integrated circuit features: internal clock oscillator; PoR; PWM
Kind of architecture: Cortex M0+
Family: ARM
Operating temperature: -40...85°C
Kind of core: 32-bit
Peripherial: POR; watchdog
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IGCM04F60GAXKMA1 IGCM04F60GAXKMA1 INFINEON TECHNOLOGIES IGCM04F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
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9+8.29 EUR
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BSS119NH6327XTSA1 BSS119NH6327XTSA1 INFINEON TECHNOLOGIES BSS119NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
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239+0.3 EUR
334+0.21 EUR
496+0.14 EUR
589+0.12 EUR
794+0.09 EUR
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PVA3354NPBF INFINEON TECHNOLOGIES IRSDS10619-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
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FM25VN10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Case: SOIC8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 40MHz
Memory organisation: 128kx8bit
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BFP640FH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Application: automotive industry
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BFP640FESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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3000+0.23 EUR
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BFP520H6327 BFP520H6327 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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BFP520H6327XTSA1 BFP520H6327XTSA1 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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2ED21814S06JXUMA1 INFINEON TECHNOLOGIES infineon-2edl23-final-rev2.9-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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ICE3A1065ELJFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 650V; 100kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Output voltage: 650V
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BCP55H6327XTSA1 BCP55H6327XTSA1 INFINEON TECHNOLOGIES BCP55H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 INFINEON TECHNOLOGIES BSR202NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 2466 Stücke:
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99+0.73 EUR
160+0.45 EUR
211+0.34 EUR
234+0.31 EUR
265+0.27 EUR
500+0.25 EUR
1000+0.23 EUR
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BSP135H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; Idm: 0.12A; 1.8W; SOT223
Mounting: SMD
Gate charge: 4.9nC
Drain current: 0.12A
Pulsed drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: 20V
On-state resistance: 25Ω
Drain-source voltage: 600V
Application: automotive industry
Case: SOT223
Technology: MOSFET
Type of transistor: N-MOSFET
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IRFHM3911TRPBF INFINEON TECHNOLOGIES irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IPB160N04S4H1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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DZ600N18K DZ600N18K INFINEON TECHNOLOGIES DZ600N18K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.8kV
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IPT019N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: HSOF-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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IPT111N20NFDATMA1 INFINEON TECHNOLOGIES Infineon-IPT111N20NFD-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8b4b786fc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
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IPT030N12N3GATMA1 INFINEON TECHNOLOGIES infineon-ipt030n12n3-g-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 237A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 237A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 158nC
Kind of channel: enhancement
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IPT044N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT044N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb22898a6c9f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
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IPC313N10N3RX1SA2 INFINEON TECHNOLOGIES Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Case: DPAK3
On-state resistance: 0.1Ω
Mounting: SMD
Kind of channel: enhancement
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IPD50N04S4L08ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50N04S408ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50N04S410ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate charge: 18.2nC
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IPD50N04S410ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 50A; 41W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 41W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Gate charge: 18.2nC
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2500+0.37 EUR
Mindestbestellmenge: 2500
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IPB110N20N3LF IPB110N20N3LF INFINEON TECHNOLOGIES IPB110N20N3LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
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IDDD10G65C6XTMA1 INFINEON TECHNOLOGIES IDDD10G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 10A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 1µA
Power dissipation: 105W
Kind of package: reel; tape
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IDW20G65C5BXKSA2 IDW20G65C5BXKSA2 INFINEON TECHNOLOGIES IDW20G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 46A
Leakage current: 2µA
Power dissipation: 130W
Kind of package: tube
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IDW20G65C5XKSA1 IDW20G65C5XKSA1 INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
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IDDD20G65C6XTMA1 INFINEON TECHNOLOGIES IDDD20G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 20A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 2µA
Power dissipation: 169W
Kind of package: reel; tape
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BSC016N03LSGATMA1 BSC016N03LSGATMA1 INFINEON TECHNOLOGIES BSC016N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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ISC026N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
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ISZ056N03LF2SATMA1 INFINEON TECHNOLOGIES ISZ056N03LF2SATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FS064SAGNFN030 INFINEON TECHNOLOGIES Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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ETD540N22P60HPSA1 INFINEON TECHNOLOGIES ETD540N22P60_ETT540N22P60.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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AIMZA75R016M1HXKSA1 INFINEON TECHNOLOGIES Infineon-AIMZA75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018da7d8a6134195 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
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BC847BWH6327XTSA1 BC847BWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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SGB02N120ATMA1 INFINEON TECHNOLOGIES SGB02N120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42799e03c76 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 6.2A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 6.2A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Gate charge: 11nC
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IRF150P221AKMA1 IRF150P221AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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12+6.06 EUR
18+3.99 EUR
25+3.58 EUR
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IRF7379TRPBF IRF7379TRPBF INFINEON TECHNOLOGIES irf7379pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TCA505BG-2 INFINEON TECHNOLOGIES Category: Unclassified
Description: TCA505BG-2
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+3.8 EUR
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IKB06N60TATMA1 IKB06N60TATMA1 INFINEON TECHNOLOGIES IKB06N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
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CYBLE-222014-01 INFINEON TECHNOLOGIES Infineon-CYBLE-222014-01-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edac5815d5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Mounting: SMD
Type of communications module: Bluetooth Low Energy
Interface: I2C; SPI; UART
Kind of module: wireless
Receiver sensitivity: -91dBm
Dimensions: 10x10mm
Supply voltage: 1.8...4.5V DC
Transmitter output power: 3dBm
Bluetooth version: 4.2; BLE
Frequency: 2.4GHz
Produkt ist nicht verfügbar
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IPP026N10NF2SAKMA1 IPP026N10NF2SAKMA1 INFINEON TECHNOLOGIES infineon-ipp026n10nf2s-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 103nC
On-state resistance: 2.6mΩ
Drain current: 184A
Drain-source voltage: 100V
Power dissipation: 250W
Kind of channel: enhancement
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17+4.29 EUR
26+2.75 EUR
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 1530 Stücke:
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414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
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BCR35PNH6327 BCR35PNH6327 INFINEON TECHNOLOGIES BCR35PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
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200+0.36 EUR
435+0.16 EUR
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
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BCR10PNH6327 BCR10PNH6327 INFINEON TECHNOLOGIES BCR10PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
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BCR35PNH6433XTMA1 INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4937 Stücke:
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424+0.17 EUR
669+0.11 EUR
842+0.085 EUR
1132+0.063 EUR
1316+0.054 EUR
1378+0.052 EUR
Mindestbestellmenge: 295
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF INFINEON TECHNOLOGIES IRF2907ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPB65R045C7ATMA2 Infineon-IPB65R045C7-DS-v02_01-en.pdf?fileId=db3a30433e78ea82013e790478550043
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 227W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 93nC
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
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1000+8.79 EUR
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BSP324H6327XTSA1 BSP324H6327XTSA1.pdf
BSP324H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
95+0.76 EUR
145+0.49 EUR
200+0.44 EUR
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IRFSL4510PBF IRFSL4510PBF.pdf
IRFSL4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C4146AZI-S423 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 48MHz; LQFP48; 64kBFLASH; ARM
Type of integrated circuit: ARM microcontroller
Clock frequency: 48MHz
Case: LQFP48
Memory: 64kB FLASH
Number of inputs/outputs: 36
Number of PWM channels: 5
Number of 16bit timers: 16
Mounting: SMD
Interface: I2C; IrDA; LIN; SPI; UART; USART
Integrated circuit features: internal clock oscillator; PoR; PWM
Kind of architecture: Cortex M0+
Family: ARM
Operating temperature: -40...85°C
Kind of core: 32-bit
Peripherial: POR; watchdog
auf Bestellung 2379 Stücke:
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Anzahl Preis
250+2.02 EUR
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IGCM04F60GAXKMA1 IGCM04F60GA.pdf
IGCM04F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.6 EUR
9+8.29 EUR
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BSS119NH6327XTSA1 BSS119NH6327XTSA1.pdf
BSS119NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
334+0.21 EUR
496+0.14 EUR
589+0.12 EUR
794+0.09 EUR
Mindestbestellmenge: 239
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PVA3354NPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 150mA
Manufacturer series: PVA
On-state resistance: 24Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 3718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.68 EUR
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Case: SOIC8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 40MHz
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Application: automotive industry
Produkt ist nicht verfügbar
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BFP640FESDH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
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BFP520H6327 BFP520.pdf
BFP520H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 BFP520.pdf
BFP520H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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2ED21814S06JXUMA1 infineon-2edl23-final-rev2.9-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
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ICE3A1065ELJFKLA1 Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 650V; 100kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Output voltage: 650V
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.72 EUR
Mindestbestellmenge: 50
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BCP55H6327XTSA1 BCP55H6327XTSA1.pdf
BCP55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BSR202NL6327HTSA1 BSR202NL6327HTSA1.pdf
BSR202NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
160+0.45 EUR
211+0.34 EUR
234+0.31 EUR
265+0.27 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 99
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BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; Idm: 0.12A; 1.8W; SOT223
Mounting: SMD
Gate charge: 4.9nC
Drain current: 0.12A
Pulsed drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: 20V
On-state resistance: 25Ω
Drain-source voltage: 600V
Application: automotive industry
Case: SOT223
Technology: MOSFET
Type of transistor: N-MOSFET
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.99 EUR
Mindestbestellmenge: 1000
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.54 EUR
Mindestbestellmenge: 1000
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DZ600N18K DZ600N18K.pdf
DZ600N18K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.8kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+368.71 EUR
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IPT019N08N5ATMA1 Infineon-IPT019N08N5-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016ac0292ba732e4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: HSOF-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IPT111N20NFDATMA1 Infineon-IPT111N20NFD-DS-v02_01-EN.pdf?fileId=5546d462533600a401537a8b4b786fc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT030N12N3GATMA1 infineon-ipt030n12n3-g-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 237A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 237A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 158nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT044N15N5ATMA1 Infineon-IPT044N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb22898a6c9f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Case: DPAK3
On-state resistance: 0.1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N04S4L08ATMA1 Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N04S408ATMA1 Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N04S410ATMA1 Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate charge: 18.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N04S410ATMA1 Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 50A; 41W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 41W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Gate charge: 18.2nC
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.37 EUR
Mindestbestellmenge: 2500
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IPB110N20N3LF IPB110N20N3LF.pdf
IPB110N20N3LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDDD10G65C6XTMA1 IDDD10G65C6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 10A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 1µA
Power dissipation: 105W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IDW20G65C5BXKSA2 IDW20G65C5B.pdf
IDW20G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 46A
Leakage current: 2µA
Power dissipation: 130W
Kind of package: tube
Produkt ist nicht verfügbar
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IDW20G65C5XKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
IDW20G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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IDDD20G65C6XTMA1 IDDD20G65C6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 20A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 2µA
Power dissipation: 169W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSC016N03LSGATMA1 BSC016N03LSG-DTE.pdf
BSC016N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC026N03L5SATMA1 Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 52W
Case: PG-TDSON-8
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FS064SAGNFN030 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 ETD540N22P60_ETT540N22P60.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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AIMZA75R016M1HXKSA1 Infineon-AIMZA75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018da7d8a6134195
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 750V; 89A; 319W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 750V
Drain current: 89A
Power dissipation: 319W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+21.28 EUR
Mindestbestellmenge: 240
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BC847BWH6327XTSA1 bc847_8_9_bc850.pdf
BC847BWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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SGB02N120ATMA1 SGB02N120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42799e03c76
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 6.2A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 6.2A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Gate charge: 11nC
auf Bestellung 55000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.39 EUR
Mindestbestellmenge: 1000
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IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
IRF150P221AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.52 EUR
12+6.06 EUR
18+3.99 EUR
25+3.58 EUR
Mindestbestellmenge: 11
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IRF7379TRPBF irf7379pbf.pdf
IRF7379TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TCA505BG-2
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TCA505BG-2
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+3.8 EUR
Mindestbestellmenge: 2500
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IKB06N60TATMA1 IKB06N60T.pdf
IKB06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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CYBLE-222014-01 Infineon-CYBLE-222014-01-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edac5815d5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Mounting: SMD
Type of communications module: Bluetooth Low Energy
Interface: I2C; SPI; UART
Kind of module: wireless
Receiver sensitivity: -91dBm
Dimensions: 10x10mm
Supply voltage: 1.8...4.5V DC
Transmitter output power: 3dBm
Bluetooth version: 4.2; BLE
Frequency: 2.4GHz
Produkt ist nicht verfügbar
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IPP026N10NF2SAKMA1 infineon-ipp026n10nf2s-datasheet-en.pdf
IPP026N10NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 184A; 250W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 103nC
On-state resistance: 2.6mΩ
Drain current: 184A
Drain-source voltage: 100V
Power dissipation: 250W
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.29 EUR
26+2.75 EUR
Mindestbestellmenge: 17
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BCR135SH6327 bcr135.pdf
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
Mindestbestellmenge: 414
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BCR35PNH6327 BCR35PNH6327.pdf
BCR35PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
435+0.16 EUR
Mindestbestellmenge: 200
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BCR135WH6327 bcr135.pdf
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BCR10PNH6327 BCR10PNH6327.pdf
BCR10PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BCR35PNH6433XTMA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 10kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4937 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
669+0.11 EUR
842+0.085 EUR
1132+0.063 EUR
1316+0.054 EUR
1378+0.052 EUR
Mindestbestellmenge: 295
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF.pdf
IRF2907ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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