Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (119826) > Seite 1996 nach 1998

Wählen Sie Seite:   [  << Vorherige Seite ]  1 199 398 597 796 995 1194 1393 1592 1791 1990 1991 1992 1993 1994 1995 1996 1997 1998  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S25FL512SAGBHV313 INFINEON TECHNOLOGIES S25FL512S_00.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVA10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVB10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVC13 INFINEON TECHNOLOGIES S25FL512S_00.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVD10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFAG10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFB010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFBG10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFI013 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R600P7SXKSA1 IPA70R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf80e8880d96 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.5A
Case: TO220FP
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 10.5nC
Power dissipation: 25W
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
89+0.8 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R017C7XKSA1 IPW60R017C7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 109A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.82 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FS75R12W2T4B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-EASY2B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 375W
Technology: EasyPACK™ 2B
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT412PBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.93 EUR
150+4.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES IPP120N20NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007E6327HTSA1 BAS4007E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 INFINEON TECHNOLOGIES BSZ018NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TSDSON-8
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Polarisation: unipolar
auf Bestellung 4970 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
69+1.04 EUR
80+0.9 EUR
82+0.87 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327HTSA1 INFINEON TECHNOLOGIES bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 70
Mounting: SMD
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.063 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 INFINEON TECHNOLOGIES BGT24MTR12.pdf Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Supply voltage: 3.135...3.465V DC
Interface: SPI
Frequency: 24...24.25GHz
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 210mA
Number of transmitters: 1
Number of receivers: 2
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.89 EUR
12+6.03 EUR
13+5.88 EUR
25+5.72 EUR
50+5.56 EUR
100+5.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 INFINEON TECHNOLOGIES BGT24LTR11.pdf Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Supply voltage: 3.2...3.4V DC
Frequency: 24...24.25GHz
Case: TSNP16
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 10dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX22G5A10E6327XTSA1 INFINEON TECHNOLOGIES bgsx22g5a10.pdf Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: DPDT
Number of channels: 2
Case: ATSLP-10-5
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1502ELSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-02ELS-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895e8f04e77 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8982TA BTN8982TA INFINEON TECHNOLOGIES BTN8982TA-DTE.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Technology: NovalithIC™
Case: PG-TO263-7
Kind of package: reel; tape
Mounting: SMD
Output current: -44...50A
Operating temperature: -40...150°C
On-state resistance: 10mΩ
Number of channels: 1
Operating voltage: 5.5...40V DC
Kind of integrated circuit: IMC; motor controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8982TAAUMA1 INFINEON TECHNOLOGIES BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.93 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68FE6327 BCW68FE6327 INFINEON TECHNOLOGIES BCW68FE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68HE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GE6327 INFINEON TECHNOLOGIES BCW68FE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES IPP60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS5202VH6327XTSA1 BAS5202VH6327XTSA1 INFINEON TECHNOLOGIES BAS5202VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 0.5W
Max. forward voltage: 0.6V
Load current: 0.75A
Max. forward impulse current: 2A
Max. off-state voltage: 45V
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
258+0.28 EUR
298+0.24 EUR
404+0.18 EUR
455+0.16 EUR
603+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BAS3010S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3010S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 1A
Max. forward impulse current: 4A
Max. off-state voltage: 30V
Max. forward voltage: 0.65V
Leakage current: 0.3mA
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.15 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R310CEXKSA2 IPA80R310CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16.7A; 35W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16.7A
Power dissipation: 35W
Case: TO220-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 91nC
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.72 EUR
31+2.37 EUR
50+1.9 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES IPP60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Drain current: 23.8A
Power dissipation: 176W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
37+1.94 EUR
39+1.84 EUR
41+1.77 EUR
50+1.7 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES IPP60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R165CPATMA1 IPB60R165CPATMA1 INFINEON TECHNOLOGIES IPB60R165CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R165CPAKSA1 IPI60R165CPAKSA1 INFINEON TECHNOLOGIES IPI60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA1 IPB65R310CFDATMA1 INFINEON TECHNOLOGIES IPB65R310CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R420CFDATMA1 IPB65R420CFDATMA1 INFINEON TECHNOLOGIES IPB65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 310W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISS17EP06LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISS17EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0731173673a6 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; 360mW; SOT23
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.79nC
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW100N60H3FKSA1 IGW100N60H3FKSA1 INFINEON TECHNOLOGIES IGW100N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 714W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES BSL606SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
127+0.57 EUR
169+0.42 EUR
191+0.37 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES irfr2407pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES irf9335pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES irf9358pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSHBSS138NH6433XTMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: BSHBSS138NH6433XTMA1
auf Bestellung 55000 Stücke:
Lieferzeit 14-21 Tag (e)
20000+0.042 EUR
Mindestbestellmenge: 20000
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES irf9952pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDV20E65D1XKSA1 INFINEON TECHNOLOGIES Infineon-IDV20E65D1-DS-v02_01-EN.pdf?fileId=5546d4624923e78d0149329dc06a76e7 Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2336DSTRPBF INFINEON TECHNOLOGIES Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET; 10÷20V
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRLPBF IRFR2405TRLPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N26K DZ540N26K INFINEON TECHNOLOGIES DZ540N26K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD540N26K DD540N26K INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.48V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N22K DZ540N22K INFINEON TECHNOLOGIES DZ540N22K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES IPW60R041P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHV313 S25FL512S_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVA10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVB10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVC13 S25FL512S_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHVD10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFAG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFB010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFBG10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFI013 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R600P7SXKSA1 Infineon-IPA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf80e8880d96
IPA70R600P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.5A
Case: TO220FP
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 10.5nC
Power dissipation: 25W
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
89+0.8 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8
IPW60R017C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 109A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.82 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FS75R12W2T4B11BOMA1 Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-EASY2B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 375W
Technology: EasyPACK™ 2B
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT412PBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.93 EUR
150+4.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPP120N20NFDAKSA1 IPP120N20NFD-DTE.pdf
IPP120N20NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4007E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSATMA1 BSZ018NE2LS-DTE.pdf
BSZ018NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TSDSON-8
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Polarisation: unipolar
auf Bestellung 4970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
69+1.04 EUR
80+0.9 EUR
82+0.87 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327HTSA1 bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 70
Mounting: SMD
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.063 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BGT24MTR12E6327XUMA1 BGT24MTR12.pdf
BGT24MTR12E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Supply voltage: 3.135...3.465V DC
Interface: SPI
Frequency: 24...24.25GHz
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 210mA
Number of transmitters: 1
Number of receivers: 2
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
12+6.03 EUR
13+5.88 EUR
25+5.72 EUR
50+5.56 EUR
100+5.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BGT24LTR11N16E6327XTSA1 BGT24LTR11.pdf
BGT24LTR11N16E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Supply voltage: 3.2...3.4V DC
Frequency: 24...24.25GHz
Case: TSNP16
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 10dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX22G5A10E6327XTSA1 bgsx22g5a10.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: DPDT
Number of channels: 2
Case: ATSLP-10-5
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1502ELSE6327XTSA1 Infineon-BAT15-02ELS-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895e8f04e77
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8982TA BTN8982TA-DTE.pdf
BTN8982TA
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Technology: NovalithIC™
Case: PG-TO263-7
Kind of package: reel; tape
Mounting: SMD
Output current: -44...50A
Operating temperature: -40...150°C
On-state resistance: 10mΩ
Number of channels: 1
Operating voltage: 5.5...40V DC
Kind of integrated circuit: IMC; motor controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8982TAAUMA1 BTN8982TA-Data-Sheet-rev10-Infineon.pdf?folderId=db3a30431ff98815012060aedcd46179&fileId=db3a30433fa9412f013fbe32289b7c17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.93 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68FE6327 BCW68FE6327.pdf
BCW68FE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68HE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GE6327 BCW68FE6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160C6XKSA1 IPP60R160C6-DTE.pdf
IPP60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS5202VH6327XTSA1 BAS5202VH6327XTSA1.pdf
BAS5202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 0.5W
Max. forward voltage: 0.6V
Load current: 0.75A
Max. forward impulse current: 2A
Max. off-state voltage: 45V
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
258+0.28 EUR
298+0.24 EUR
404+0.18 EUR
455+0.16 EUR
603+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BAS3010S02LRHE6327XTSA1 bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3010S02LRHE6327XTSA1 bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 1A
Max. forward impulse current: 4A
Max. off-state voltage: 30V
Max. forward voltage: 0.65V
Leakage current: 0.3mA
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.15 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R310CEXKSA2 Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45
IPA80R310CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16.7A; 35W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16.7A
Power dissipation: 35W
Case: TO220-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 91nC
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.72 EUR
31+2.37 EUR
50+1.9 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160P6XKSA1 IPP60R160P6-DTE.pdf
IPP60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Drain current: 23.8A
Power dissipation: 176W
Drain-source voltage: 600V
Technology: CoolMOS™ P6
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
37+1.94 EUR
39+1.84 EUR
41+1.77 EUR
50+1.7 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R165CPXKSA1 IPP60R165CP-DTE.pdf
IPP60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R165CPATMA1 IPB60R165CP-DTE.pdf
IPB60R165CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R165CPAKSA1 IPI60R165CP-DTE.pdf
IPI60R165CPAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA1 IPB65R310CFD-DTE.pdf
IPB65R310CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R420CFDATMA1 IPB65R420CFD-DTE.pdf
IPB65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 310W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISS17EP06LMXTSA1 Infineon-ISS17EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0731173673a6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; 360mW; SOT23
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.79nC
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW100N60H3FKSA1 IGW100N60H3-DTE.pdf
IGW100N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 714W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1.pdf
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
127+0.57 EUR
169+0.42 EUR
191+0.37 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2407TRPBF irfr2407pbf.pdf
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9335TRPBF irf9335pbf.pdf
IRF9335TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9358TRPBF irf9358pbf.pdf
IRF9358TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSHBSS138NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BSHBSS138NH6433XTMA1
auf Bestellung 55000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20000+0.042 EUR
Mindestbestellmenge: 20000
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBF irf9952pbf.pdf
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDV20E65D1XKSA1 Infineon-IDV20E65D1-DS-v02_01-EN.pdf?fileId=5546d4624923e78d0149329dc06a76e7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2336DSTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET; 10÷20V
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRLPBF irfr2405pbf.pdf
IRFR2405TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N26K DZ540N26K.pdf
DZ540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD540N26K DD540N2xK.pdf
DD540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.48V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N22K DZ540N22K.pdf
DZ540N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041P6FKSA1 IPW60R041P6-DTE.pdf
IPW60R041P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 199 398 597 796 995 1194 1393 1592 1791 1990 1991 1992 1993 1994 1995 1996 1997 1998  [ Nächste Seite >> ]