Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (119826) > Seite 1991 nach 1998

Wählen Sie Seite:   [  << Vorherige Seite ]  1 199 398 597 796 995 1194 1393 1592 1791 1986 1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1998  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146ELL-45ZSXI CY62146ELL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Access time: 45ns
Operating voltage: 4.5...5.5V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CY62146EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV18LL-55BVXIT INFINEON TECHNOLOGIES ?docID=45535 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45BVXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45ZSXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3GATMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 40mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 18mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Case: TSNP10
Application: telecommunication
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Supply voltage: 1.8...3.6V DC
Number of channels: 4
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 10ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Access time: 10ns
Operating voltage: 2.2...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7S1061G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1051H30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1051H_8_Mbit_(512K_Words_X_16_Bit)_Static_RAM_with_Error_Correcting_Code_(ECC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d15667e0&utm_source=cypress&utm_medium=referral&utm_campa Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx16bit
Memory: 8Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1069G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 2Mx8bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL128P11FFI020
+1
 		S29GL128P11FFI020 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: BGA64
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.51 EUR
25+7.72 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGNFV010 S25FL256LAGNFV010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
auf Bestellung 1512 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.82 EUR
12+6.32 EUR
13+5.89 EUR
25+5.58 EUR
100+5.28 EUR
338+5.08 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
S25FL127SABNFI101 S25FL127SABNFI101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 108MHz
Case: WSON8
Part status: Not recommended for new designs
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.35 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT60BE6359HTMA1 INFINEON TECHNOLOGIES Infineon-BAT60BSERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES IPW60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.23 EUR
15+4.95 EUR
19+3.82 EUR
22+3.3 EUR
30+3.06 EUR
60+2.86 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.42 EUR
11+7.14 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES IPP60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.95 EUR
15+5 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES IPP60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES IPP60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.36 EUR
15+4.82 EUR
16+4.56 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPAFKSA1 IPW60R099CPAFKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 80nC
Application: automotive industry
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.01 EUR
11+7.04 EUR
12+6.41 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099CPATMA1 IPB60R099CPATMA1 INFINEON TECHNOLOGIES IPB60R099CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES IPW60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C7ATMA1 IPB60R099C7ATMA1 INFINEON TECHNOLOGIES IPB60R099C7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099P7ATMA1 IPB60R099P7ATMA1 INFINEON TECHNOLOGIES IPB60R099P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES IPW60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C6 IPB60R099C6 INFINEON TECHNOLOGIES IPB60R099C6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C6ATMA1 IPB60R099C6ATMA1 INFINEON TECHNOLOGIES IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099CPAATMA1 INFINEON TECHNOLOGIES Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: D2PAK; TO263
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R099CPXKSA1 IPI60R099CPXKSA1 INFINEON TECHNOLOGIES IPI60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES IPP60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES IPP60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 INFINEON TECHNOLOGIES IPZA60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA040N06NXKSA1 IPA040N06NXKSA1 INFINEON TECHNOLOGIES IPA040N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 4mΩ
Drain current: 69A
Power dissipation: 36W
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
52+1.4 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES IPW60R070CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES IPW60R070P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HFA15TB60PBF HFA15TB60PBF INFINEON TECHNOLOGIES HFA15TB60PBF.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 74ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7440TRPBF INFINEON TECHNOLOGIES irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES IPB100N06S205.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES BSZ100N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES IPB100N06S2L05.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP100N06S2L05AKSA2 INFINEON TECHNOLOGIES Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 100A; 300W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 230nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.35 EUR
200+3.02 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FM25VN10-G FM25VN10-G INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 40MHz
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM25V20A-DGQTR FM25V20A-DGQTR INFINEON TECHNOLOGIES FM25V20A-DGQ-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM25V20A-DGTR FM25V20A-DGTR INFINEON TECHNOLOGIES FM25V20A-DG-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Max. load current: 160A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT010N08NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES infineon-idwd30g120c5-datasheet-en.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Load current: 30A
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES IPW60R041C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.5 EUR
7+11.65 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CY62177EV18LL-70BAXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146ELL-45ZSXI Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Access time: 45ns
Operating voltage: 4.5...5.5V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CY62146EV30LL-45BVXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146EV30LL-45ZSXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV18LL-55BVXIT ?docID=45535
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45B2XIT ?docID=45537
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147EV30LL-45ZSXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1-DTE.pdf
BSZ180P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 40mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA-DTE.pdf
BSZ180P03NS3EGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 18mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Case: TSNP10
Application: telecommunication
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Supply voltage: 1.8...3.6V DC
Number of channels: 4
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G30-10BVXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 10ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Access time: 10ns
Operating voltage: 2.2...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7S1061G30-10BVXI Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1051H30-10BVXI Infineon-CY7C1051H_8_Mbit_(512K_Words_X_16_Bit)_Static_RAM_with_Error_Correcting_Code_(ECC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d15667e0&utm_source=cypress&utm_medium=referral&utm_campa
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx16bit
Memory: 8Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061G30-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1069G30-10BVXI Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 2Mx8bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL128P11FFI020 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P11FFI020
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: BGA64
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.51 EUR
25+7.72 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGNFV010 S25FL.pdf
S25FL256LAGNFV010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
auf Bestellung 1512 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.82 EUR
12+6.32 EUR
13+5.89 EUR
25+5.58 EUR
100+5.28 EUR
338+5.08 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
S25FL127SABNFI101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL127SABNFI101
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 108MHz
Case: WSON8
Part status: Not recommended for new designs
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.35 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 IPW60R099P6-DTE.pdf
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.23 EUR
15+4.95 EUR
19+3.82 EUR
22+3.3 EUR
30+3.06 EUR
60+2.86 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.42 EUR
11+7.14 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099CPXKSA1 IPP60R099CP-DTE.pdf
IPP60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.95 EUR
15+5 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C6XKSA1 IPP60R099C6-DTE.pdf
IPP60R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P7 IPP60R099P7.pdf
IPP60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
15+4.82 EUR
16+4.56 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
IPW60R099CPAFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 80nC
Application: automotive industry
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
11+7.04 EUR
12+6.41 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099CPATMA1 IPB60R099CP-DTE.pdf
IPB60R099CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 IPW60R099C6-DTE.pdf
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C7ATMA1 IPB60R099C7.pdf
IPB60R099C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099P7ATMA1 IPB60R099P7.pdf
IPB60R099P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C7XKSA1 IPW60R099C7-DTE.pdf
IPW60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C6 IPB60R099C6.pdf
IPB60R099C6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C6ATMA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPB60R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: D2PAK; TO263
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R099CPXKSA1 IPI60R099CP-DTE.pdf
IPI60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C7XKSA1 IPP60R099C7-DTE.pdf
IPP60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P6XKSA1 IPP60R099P6-DTE.pdf
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R099P7XKSA1 IPZA60R099P7.pdf
IPZA60R099P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA040N06NXKSA1 IPA040N06N-DTE.pdf
IPA040N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 4mΩ
Drain current: 69A
Power dissipation: 36W
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
52+1.4 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070CFD7 IPW60R070CFD7.pdf
IPW60R070CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070P6XKSA1 IPW60R070P6-DTE.pdf
IPW60R070P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HFA15TB60PBF HFA15TB60PBF.pdf
HFA15TB60PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 74ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7440TRPBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S205ATMA4 IPB100N06S205.pdf
IPB100N06S205ATMA4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 BSZ100N06NS-DTE.pdf
BSZ100N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S2L05ATMA2 IPB100N06S2L05.pdf
IPB100N06S2L05ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP100N06S2L05AKSA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 100A; 300W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 230nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.35 EUR
200+3.02 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FM25VN10-G Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 40MHz
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM25V20A-DGQTR FM25V20A-DGQ-DTE.pdf
FM25V20A-DGQTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM25V20A-DGTR FM25V20A-DG-DTE.pdf
FM25V20A-DGTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Max. load current: 160A
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT010N08NM5ATMA1 Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD30G120C5XKSA1 infineon-idwd30g120c5-datasheet-en.pdf
IDWD30G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Load current: 30A
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041C6FKSA1 IPW60R041C6-DTE.pdf
IPW60R041C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.5 EUR
7+11.65 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 199 398 597 796 995 1194 1393 1592 1791 1986 1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1998  [ Nächste Seite >> ]