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IPP030N10N5XKSA1 IPP030N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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14+5.16 EUR
15+4.76 EUR
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
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15+4.96 EUR
21+3.42 EUR
50+3.2 EUR
100+3.09 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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ISC030N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED2106S06FXUMA1 2ED2106S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Mounting: SMD
Supply voltage: 10...20V
Voltage class: 650V
Integrated circuit features: integrated bootstrap functionality
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
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2ED21064S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.05mΩ
Drain current: 119A
Drain-source voltage: 60V
Power dissipation: 150W
Kind of channel: enhancement
auf Bestellung 106 Stücke:
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52+1.4 EUR
60+1.21 EUR
63+1.14 EUR
72+1 EUR
100+0.89 EUR
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 INFINEON TECHNOLOGIES SMBTA06UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
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SMBTA06E6327 SMBTA06E6327 INFINEON TECHNOLOGIES SMBTA06E6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
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FM24CL16B-G FM24CL16B-G INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Interface: I2C
auf Bestellung 82 Stücke:
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22+3.29 EUR
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S25FL032P0XMFA010 S25FL032P0XMFA010 INFINEON TECHNOLOGIES Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 104MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 727 Stücke:
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14+5.19 EUR
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S25FL064LABMFI010 S25FL064LABMFI010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 667 Stücke:
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15+5 EUR
16+4.52 EUR
25+3.92 EUR
100+3.78 EUR
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IPB100N04S4H2ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
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IPC100N04S5-2R8 IPC100N04S5-2R8 INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES IPC100N04S51R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES IPC100N04S5L1R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES IPB100N04S303.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T
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IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES IPC100N04S51R2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES IPC100N04S51R7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES IPC100N04S5L1R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES IPC100N04S5L1R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES IPC100N04S5L2R6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
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IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 33 Stücke:
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16+4.53 EUR
18+4.06 EUR
29+2.55 EUR
33+2.17 EUR
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IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES irfp7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
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16+4.68 EUR
17+4.23 EUR
25+2.92 EUR
30+2.39 EUR
50+2.33 EUR
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IPP015N04NF2SAKMA1 IPP015N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 106nC
On-state resistance: 1.5mΩ
Drain current: 193A
Drain-source voltage: 40V
Power dissipation: 188W
Kind of channel: enhancement
auf Bestellung 75 Stücke:
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44+1.63 EUR
47+1.53 EUR
49+1.47 EUR
57+1.27 EUR
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ISC015N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Supply voltage: 4.9...60V DC
Operating temperature: -40...125°C
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
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TLF50251EL TLF50251EL INFINEON TECHNOLOGIES TLF50251EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
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TLF50201EL TLF50201EL INFINEON TECHNOLOGIES TLF50201EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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S29GL256S10DHA020 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Access time: 100ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Application: automotive
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
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CY7C65632-48AXCT INFINEON TECHNOLOGIES Infineon-CY7C65632_CY7C65634_HX2VL.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI; HUB controller; 3.15÷3.6VDC,4.75÷5.25VDC
Type of integrated circuit: interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Case: TQFP48
Kind of core: 8-bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRF7389TRPBF IRF7389TRPBF INFINEON TECHNOLOGIES irf7389pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES BFR181WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 20mA
Power dissipation: 0.175W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Case: SOT323
Type of transistor: NPN
auf Bestellung 8794 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
258+0.28 EUR
290+0.25 EUR
341+0.21 EUR
382+0.19 EUR
424+0.17 EUR
472+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218 Stücke
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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
131+0.55 EUR
136+0.53 EUR
142+0.5 EUR
146+0.49 EUR
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TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
82+0.88 EUR
115+0.62 EUR
1000+0.5 EUR
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TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
41+1.74 EUR
66+1.09 EUR
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Power dissipation: 0.1W
Load current: 0.11A
Max. forward voltage: 0.41V
Semiconductor structure: single diode
Max. off-state voltage: 4V
Mounting: SMD
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
110+0.65 EUR
126+0.57 EUR
205+0.35 EUR
500+0.25 EUR
1000+0.23 EUR
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BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES irlr3103pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Power dissipation: 375W
Gate charge: 305nC
On-state resistance: 0.55mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 426A
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.4 EUR
30+2.43 EUR
35+2.1 EUR
100+1.77 EUR
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IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES IKW30N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 44ns
Gate charge: 168nC
Turn-off time: 359ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 62A
Power dissipation: 114W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.63 EUR
17+4.29 EUR
23+3.22 EUR
26+2.79 EUR
30+2.62 EUR
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES ikw30n65h5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 31ns
Gate charge: 70nC
Turn-off time: 209ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 35A
Power dissipation: 94W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
auf Bestellung 28 Stücke:
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18+4.05 EUR
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IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 29ns
Gate charge: 70nC
Turn-off time: 154ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Collector-emitter voltage: 650V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
19+3.76 EUR
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 51ns
Gate charge: 155nC
Turn-off time: 376ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 75W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES irf7413zpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
119+0.6 EUR
126+0.57 EUR
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IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES BFR106E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
272+0.26 EUR
309+0.23 EUR
363+0.2 EUR
404+0.18 EUR
439+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 218 Stücke
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IRFB4510PBF IRFB4510PBF INFINEON TECHNOLOGIES IRFB4510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
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IRF5803TRPBF IRF5803TRPBF INFINEON TECHNOLOGIES irf5803pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
157+0.46 EUR
232+0.31 EUR
268+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
1500+0.16 EUR
Mindestbestellmenge: 125 Stücke
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BAS4004E6433HTMA1 INFINEON TECHNOLOGIES INFNS19700-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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BSP62H6327XTSA1 INFINEON TECHNOLOGIES bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Current gain: 2k
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
IPP030N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.16 EUR
15+4.76 EUR
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IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+4.96 EUR
21+3.42 EUR
50+3.2 EUR
100+3.09 EUR
Mindestbestellmenge: 15 Stücke
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IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC030N10NM6ATMA1 Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED2106S06FXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
2ED2106S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Mounting: SMD
Supply voltage: 10...20V
Voltage class: 650V
Integrated circuit features: integrated bootstrap functionality
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
IPP030N06NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.05mΩ
Drain current: 119A
Drain-source voltage: 60V
Power dissipation: 150W
Kind of channel: enhancement
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
52+1.4 EUR
60+1.21 EUR
63+1.14 EUR
72+1 EUR
100+0.89 EUR
Mindestbestellmenge: 52 Stücke
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327.pdf
SMBTA06UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SMBTA06E6327 SMBTA06E6327.pdf
SMBTA06E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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FM24CL16B-G Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
FM24CL16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Interface: I2C
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
22+3.29 EUR
Mindestbestellmenge: 22 Stücke
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S25FL032P0XMFA010 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XMFA010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 104MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.19 EUR
Mindestbestellmenge: 14 Stücke
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S25FL064LABMFI010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
S25FL064LABMFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+5 EUR
16+4.52 EUR
25+3.92 EUR
100+3.78 EUR
Mindestbestellmenge: 15 Stücke
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IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPC100N04S5-2R8 IPC100N04S52R8.pdf
IPC100N04S5-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-1R9 IPC100N04S51R9.pdf
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R5 IPC100N04S5L1R5.pdf
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPB100N04S303.pdf
IPB100N04S303ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T
Produkt ist nicht verfügbar
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IPC100N04S5-1R2 IPC100N04S51R2.pdf
IPC100N04S5-1R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPC100N04S5-1R7 IPC100N04S51R7.pdf
IPC100N04S5-1R7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPC100N04S5L-1R1 IPC100N04S5L1R1.pdf
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L1R9.pdf
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-2R6 IPC100N04S5L2R6.pdf
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFB7530PBF irfs7530pbf.pdf
IRFB7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.53 EUR
18+4.06 EUR
29+2.55 EUR
33+2.17 EUR
Mindestbestellmenge: 16 Stücke
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IRFP7530PBF irfp7530pbf.pdf
IRFP7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.68 EUR
17+4.23 EUR
25+2.92 EUR
30+2.39 EUR
50+2.33 EUR
Mindestbestellmenge: 16 Stücke
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IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3+23.84 EUR
Mindestbestellmenge: 3 Stücke
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IPP015N04NF2SAKMA1 Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3
IPP015N04NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 106nC
On-state resistance: 1.5mΩ
Drain current: 193A
Drain-source voltage: 40V
Power dissipation: 188W
Kind of channel: enhancement
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
44+1.63 EUR
47+1.53 EUR
49+1.47 EUR
57+1.27 EUR
Mindestbestellmenge: 44 Stücke
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ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Supply voltage: 4.9...60V DC
Operating temperature: -40...125°C
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TLF50251EL TLF50251EL.pdf
TLF50251EL
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+35.75 EUR
Mindestbestellmenge: 2 Stücke
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TLF50201EL TLF50201EL.pdf
TLF50201EL
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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S29GL256S10DHA020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Access time: 100ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Application: automotive
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
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CY7C65632-48AXCT Infineon-CY7C65632_CY7C65634_HX2VL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI; HUB controller; 3.15÷3.6VDC,4.75÷5.25VDC
Type of integrated circuit: interface
Interface: I2C; SPI
Kind of integrated circuit: HUB controller
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.6V DC; 4.75...5.25V DC
Case: TQFP48
Kind of core: 8-bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF7389TRPBF description irf7389pbf.pdf
IRF7389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR181WH6327XTSA1 BFR181WH6327.pdf
BFR181WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 20mA
Power dissipation: 0.175W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Case: SOT323
Type of transistor: NPN
auf Bestellung 8794 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
218+0.33 EUR
258+0.28 EUR
290+0.25 EUR
341+0.21 EUR
382+0.19 EUR
424+0.17 EUR
472+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218 Stücke
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
9+7.95 EUR
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
117+0.61 EUR
131+0.55 EUR
136+0.53 EUR
142+0.5 EUR
146+0.49 EUR
Mindestbestellmenge: 117 Stücke
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TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
60+1.2 EUR
82+0.88 EUR
115+0.62 EUR
1000+0.5 EUR
Mindestbestellmenge: 60 Stücke
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TLE4945L TLE49x5L.PDF
TLE4945L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
38+1.89 EUR
41+1.74 EUR
66+1.09 EUR
Mindestbestellmenge: 38 Stücke
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1.pdf
BAT1503WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Case: SOD323
Power dissipation: 0.1W
Load current: 0.11A
Max. forward voltage: 0.41V
Semiconductor structure: single diode
Max. off-state voltage: 4V
Mounting: SMD
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
85+0.84 EUR
110+0.65 EUR
126+0.57 EUR
205+0.35 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 85 Stücke
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BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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IRLR3103TRPBF irlr3103pbf.pdf
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Power dissipation: 375W
Gate charge: 305nC
On-state resistance: 0.55mΩ
Produkt ist nicht verfügbar
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 426A
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
22+3.4 EUR
30+2.43 EUR
35+2.1 EUR
100+1.77 EUR
Mindestbestellmenge: 22 Stücke
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IKW30N65EL5XKSA1 IKW30N65EL5.pdf
IKW30N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 44ns
Gate charge: 168nC
Turn-off time: 359ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 62A
Power dissipation: 114W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.63 EUR
17+4.29 EUR
23+3.22 EUR
26+2.79 EUR
30+2.62 EUR
Mindestbestellmenge: 16 Stücke
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IKW30N65H5XKSA1 ikw30n65h5.pdf
IKW30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 31ns
Gate charge: 70nC
Turn-off time: 209ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 35A
Power dissipation: 94W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
18+4.05 EUR
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IKW30N65ES5XKSA1 IKW30N65ES5.pdf
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 29ns
Gate charge: 70nC
Turn-off time: 154ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Collector-emitter voltage: 650V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
18+4.06 EUR
19+3.76 EUR
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IKW30N65WR5XKSA1 IKW30N65WR5.pdf
IKW30N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 51ns
Gate charge: 155nC
Turn-off time: 376ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 75W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
4+17.88 EUR
Mindestbestellmenge: 4 Stücke
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IRF7413ZTRPBF description irf7413zpbf.pdf
IRF7413ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
67+1.07 EUR
119+0.6 EUR
126+0.57 EUR
Mindestbestellmenge: 67 Stücke
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IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR106E6327 BFR106E6327-dte.pdf
BFR106E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
218+0.33 EUR
272+0.26 EUR
309+0.23 EUR
363+0.2 EUR
404+0.18 EUR
439+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 218 Stücke
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IRFB4510PBF IRFB4510PBF.pdf
IRFB4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
18+3.98 EUR
Mindestbestellmenge: 18 Stücke
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IRF5803TRPBF irf5803pbf.pdf
IRF5803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
125+0.57 EUR
157+0.46 EUR
232+0.31 EUR
268+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
1500+0.16 EUR
Mindestbestellmenge: 125 Stücke
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BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BSP62H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Current gain: 2k
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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