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BFP842ESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 3.7V; 40mA; 120mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 3.7V
Collector current: 40mA
Power dissipation: 0.12W
Case: SOT343
Current gain: 150
Mounting: SMD
Frequency: 60GHz
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3000+0.31 EUR
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES irf7425pbf.pdf irf7425pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4464 Stücke:
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68+1.06 EUR
79+0.92 EUR
85+0.84 EUR
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IRF7240TRPBF IRF7240TRPBF INFINEON TECHNOLOGIES irf7240pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDWD50E120D7XKSA1 INFINEON TECHNOLOGIES Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
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IDWD50E65E7XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0 Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
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BC857BWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 220
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
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S29JL032J70TFI320 S29JL032J70TFI320 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
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S29JL064J55TFI000 S29JL064J55TFI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
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S29JL032J70TFI420 S29JL032J70TFI420 INFINEON TECHNOLOGIES Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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CY9BF416NPMC-G-JNE2 INFINEON TECHNOLOGIES download Category: ST microcontrollers
Description: CY9BF416NPMC-G-JNE2
auf Bestellung 2060 Stücke:
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IMZA65R083M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R083M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c878f3c6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 104W
Case: TO247-4
On-state resistance: 111mΩ
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
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IPZA65R029CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPZA65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730948d81344e8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 69A
Power dissipation: 305W
Case: TO247-4
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 145nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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T560N16TOFXPSA1 T560N16TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Mounting: Press-Pack
Gate current: 200mA
Max. load current: 809A
Max. forward impulse current: 8kA
Load current: 559A
Max. off-state voltage: 1.6kV
Features of semiconductor devices: phase control thyristor (PCT)
Case: BG-T4814K0-1
Kind of package: in-tray
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BSB008NE2LXXUMA1 BSB008NE2LXXUMA1 INFINEON TECHNOLOGIES BSB008NE2LX-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 0.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 89W
Drain current: 180A
Case: CanPAK™ MX; MG-WDSON-2
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IPTC020N13NM6ATMA1 INFINEON TECHNOLOGIES Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 135V
Drain current: 297A
Power dissipation: 395W
Case: PG-HDSOP-16
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
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IRFP4768PBF IRFP4768PBF INFINEON TECHNOLOGIES irfp4768pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
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CY8C3866PVI-021 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: CY8C3866PVI-021
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30+24.82 EUR
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BAT2402ELSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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BAT2402LSE6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Case: DIP8
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
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IR2118STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRFI4212H-117P IRFI4212H-117P INFINEON TECHNOLOGIES irfi4212h-117p.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 18W
Case: TO220FP-5
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
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IPD130N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DPAK3
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of channel: enhancement
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ISZ230N10NM6ATMA1 INFINEON TECHNOLOGIES infineon-isz230n10nm6-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8 FL
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
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IPD30N10S3L34ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
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2500+0.78 EUR
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CY8C4124PVI-442T CY8C4124PVI-442T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
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CY8C4014PVI-422 CY8C4014PVI-422 INFINEON TECHNOLOGIES CY8C4014LQI-412.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH
Interface: GPIO; I2C
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 20
Memory: 2kB SRAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense
Produkt ist nicht verfügbar
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CY8C4125PVI-482 CY8C4125PVI-482 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
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CY8C4245PVI-482 CY8C4245PVI-482 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
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CY8C4124PVI-432 CY8C4124PVI-432 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
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BGSX24MU16E6327XUSA1 INFINEON TECHNOLOGIES Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Bandwidth: 0.1...5GHz
Case: ULGA16-1
Output configuration: DP4T
Application: telecommunication
Interface: MIPI
Produkt ist nicht verfügbar
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BGSX24MU16E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Category: Analog multiplexers and switches
Description: IC: RF switch
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
4500+0.87 EUR
Mindestbestellmenge: 4500
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BGSX44MA12E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSX44MA12-DataSheet-v02_02-EN.pdf?fileId=5546d462773f9324017744a682e24a43 Category: Analog multiplexers and switches
Description: IC: RF switch
Mounting: SMD
Type of integrated circuit: RF switch
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4500+0.67 EUR
Mindestbestellmenge: 4500
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IR2181STRPBF INFINEON TECHNOLOGIES ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 1.8A; Ch: 2; MOSFET; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Maximum output current: 2.3A
Voltage class: 600V
Turn-on time: 180ns
Power dissipation: 0.625W
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2500+1.9 EUR
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S25FL256SAGMFI011 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BCR431UXTSA1 BCR431UXTSA1 INFINEON TECHNOLOGIES Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
236+0.3 EUR
262+0.27 EUR
291+0.25 EUR
302+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 193
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
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Lieferzeit 14-21 Tag (e)
50+6.85 EUR
Mindestbestellmenge: 50
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BSR92PH6327XTSA1 BSR92PH6327XTSA1 INFINEON TECHNOLOGIES BSR92PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
On-state resistance: 20Ω
Gate-source voltage: ±20V
auf Bestellung 673 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
129+0.56 EUR
183+0.39 EUR
212+0.34 EUR
500+0.25 EUR
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BSP92PH6327XTSA1 BSP92PH6327XTSA1 INFINEON TECHNOLOGIES BSP92PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Case: PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -260mA
Power dissipation: 1.8W
On-state resistance: 12Ω
Gate-source voltage: ±20V
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Lieferzeit 14-21 Tag (e)
84+0.86 EUR
130+0.55 EUR
201+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
Mindestbestellmenge: 84
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES BSS192PH6327FTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
On-state resistance: 12Ω
Gate-source voltage: ±20V
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
132+0.54 EUR
222+0.32 EUR
500+0.23 EUR
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D1251S45TXPSA1 INFINEON TECHNOLOGIES Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
42+1.73 EUR
50+1.47 EUR
100+1.37 EUR
250+1.29 EUR
Mindestbestellmenge: 38
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxy12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES 1EDI20N12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI3033ASXUMA1 INFINEON TECHNOLOGIES infineon-1edi3033as-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Integrated circuit features: MOSFET
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Produkt ist nicht verfügbar
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1EDI10I12MFXUMA1 1EDI10I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI2010ASXUMA1 INFINEON TECHNOLOGIES 1EDI2010AS.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Case: PG-DSO-36
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Interface: SPI
Output current: -1...1A
Number of channels: 1
Supply voltage: 4.65...5.5V; 13...18V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI20I12AFXUMA1 1EDI20I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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1EDI3020ASXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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1EDI3030ASXUMA1 INFINEON TECHNOLOGIES 1EDI3020ASXUMA1.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.51 EUR
Mindestbestellmenge: 13
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ISC019N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC058N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.39 EUR
Mindestbestellmenge: 5000
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BSC016N06NSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 139W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.37 EUR
Mindestbestellmenge: 5000
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BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 3.7V; 40mA; 120mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 3.7V
Collector current: 40mA
Power dissipation: 0.12W
Case: SOT343
Current gain: 150
Mounting: SMD
Frequency: 60GHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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IRF7425TRPBF irf7425pbf.pdf irf7425pbf.pdf
IRF7425TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
68+1.06 EUR
79+0.92 EUR
85+0.84 EUR
Mindestbestellmenge: 52
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IRF7240TRPBF irf7240pbf.pdf
IRF7240TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDWD50E120D7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
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IDWD50E65E7XKSA1 Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Produkt ist nicht verfügbar
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BC857BWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 220
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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S29JL032J70TFI320 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI320
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29JL064J55TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI000
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Kind of memory: NOR
Interface: CFI; parallel
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S29JL032J70TFI420 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI420
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; TSOP48; parallel
Interface: CFI; parallel
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: parallel
Mounting: SMD
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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CY9BF416NPMC-G-JNE2 download
Hersteller: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: CY9BF416NPMC-G-JNE2
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+4.79 EUR
Mindestbestellmenge: 90
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IMZA65R083M1HXKSA1 Infineon-IMZA65R083M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c878f3c6e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; 104W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 104W
Case: TO247-4
On-state resistance: 111mΩ
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA65R029CFD7XKSA1 Infineon-IPZA65R029CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730948d81344e8
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 69A; 305W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 69A
Power dissipation: 305W
Case: TO247-4
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 145nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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T560N16TOFXPSA1 T560N.pdf
T560N16TOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Mounting: Press-Pack
Gate current: 200mA
Max. load current: 809A
Max. forward impulse current: 8kA
Load current: 559A
Max. off-state voltage: 1.6kV
Features of semiconductor devices: phase control thyristor (PCT)
Case: BG-T4814K0-1
Kind of package: in-tray
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+148.36 EUR
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BSB008NE2LXXUMA1 BSB008NE2LX-DTE.pdf
BSB008NE2LXXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 89W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 0.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 89W
Drain current: 180A
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTC020N13NM6ATMA1 Infineon-IPTC020N13NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e74cd86a12ebc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 135V; 297A; 395W; PG-HDSOP-16
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 135V
Drain current: 297A
Power dissipation: 395W
Case: PG-HDSOP-16
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1800+6.52 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4768PBF irfp4768pbf.pdf
IRFP4768PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C3866PVI-021 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C3866PVI-021
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+24.82 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BAT2402ELSE6327XTSA1 Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT2402LSE6327XTSA1 Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2118SPBF description ir2117.pdf
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IR2118PBF ir2117.pdf
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Case: DIP8
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2118STRPBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRFI4212H-117P irfi4212h-117p.pdf
IRFI4212H-117P
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 11A; 18W; TO220FP-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 18W
Case: TO220FP-5
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 71W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DPAK3
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISZ230N10NM6ATMA1 infineon-isz230n10nm6-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8 FL
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N10S3L34ATMA2 Infineon-IPD30N10S3L-34-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a908963135956
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 30A; 57W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.78 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4124PVI-442T Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124PVI-442T
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4014PVI-422 CY8C4014LQI-412.pdf
CY8C4014PVI-422
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 16MHz; SSOP28; 2kBSRAM,16kBFLASH
Interface: GPIO; I2C
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 20
Memory: 2kB SRAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense
Produkt ist nicht verfügbar
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CY8C4125PVI-482 CY8C4124AXI-443.pdf
CY8C4125PVI-482
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
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CY8C4245PVI-482 CY8C4244LQI-443.pdf
CY8C4245PVI-482
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; SSOP28; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4124PVI-432 CY8C4124AXI-443.pdf
CY8C4124PVI-432
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Bandwidth: 0.1...5GHz
Case: ULGA16-1
Output configuration: DP4T
Application: telecommunication
Interface: MIPI
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX24MU16E6327XTSA1 Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4500+0.87 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
BGSX44MA12E6327XTSA1 Infineon-BGSX44MA12-DataSheet-v02_02-EN.pdf?fileId=5546d462773f9324017744a682e24a43
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Mounting: SMD
Type of integrated circuit: RF switch
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4500+0.67 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
IR2181STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 1.8A; Ch: 2; MOSFET; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Maximum output current: 2.3A
Voltage class: 600V
Turn-on time: 180ns
Power dissipation: 0.625W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.9 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256SAGMFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR431UXTSA1 Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a
BCR431UXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
236+0.3 EUR
262+0.27 EUR
291+0.25 EUR
302+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 193
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.85 EUR
Mindestbestellmenge: 50
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BSR92PH6327XTSA1 BSR92PH6327XTSA1.pdf
BSR92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
On-state resistance: 20Ω
Gate-source voltage: ±20V
auf Bestellung 673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
129+0.56 EUR
183+0.39 EUR
212+0.34 EUR
500+0.25 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BSP92PH6327XTSA1 BSP92PH6327XTSA1-dte.pdf
BSP92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Case: PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -260mA
Power dissipation: 1.8W
On-state resistance: 12Ω
Gate-source voltage: ±20V
auf Bestellung 2243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
130+0.55 EUR
201+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
Mindestbestellmenge: 84
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BSS192PH6327FTSA1 BSS192PH6327FTSA1-dte.pdf
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
On-state resistance: 12Ω
Gate-source voltage: ±20V
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
132+0.54 EUR
222+0.32 EUR
500+0.23 EUR
Mindestbestellmenge: 91
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D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI05I12AFXUMA1 1EDIxxI12AF.pdf
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
42+1.73 EUR
50+1.47 EUR
100+1.37 EUR
250+1.29 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
1EDI60N12AFXUMA1 1EDIxxy12AF.pdf
1EDI60N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20N12AFXUMA1 1EDI20N12AF.pdf
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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1EDI40I12AFXUMA1 1EDIxxI12AF.pdf
1EDI40I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI60I12AFXUMA1 1EDIxxI12AF.pdf
1EDI60I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI3033ASXUMA1 infineon-1edi3033as-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Integrated circuit features: MOSFET
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI10I12MFXUMA1 1EDIxxI12MF.pdf
1EDI10I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI2010ASXUMA1 1EDI2010AS.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Case: PG-DSO-36
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Interface: SPI
Output current: -1...1A
Number of channels: 1
Supply voltage: 4.65...5.5V; 13...18V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20I12AFXUMA1 1EDIxxI12AF.pdf
1EDI20I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20I12MFXUMA1 1EDIxxI12MF.pdf
1EDI20I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI3030ASXUMA1 1EDI3020ASXUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI30I12MFXUMA1 1EDIxxI12MF.pdf
1EDI30I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
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ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.39 EUR
Mindestbestellmenge: 5000
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BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 139W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.37 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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