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IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3410TRLPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES ICE2QS02G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1794 Stücke:
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52+1.4 EUR
61+1.17 EUR
67+1.07 EUR
76+0.94 EUR
77+0.93 EUR
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES irlms5703pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES irlms1503pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Mounting: SMD
Polarisation: unipolar
Case: TSOP6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Power dissipation: 1.7W
Drain current: 3.2A
Drain-source voltage: 30V
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IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES irlms1902pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS2002TRPBF IRLMS2002TRPBF INFINEON TECHNOLOGIES irlms2002pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7507 Stücke:
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358+0.2 EUR
506+0.14 EUR
767+0.093 EUR
903+0.079 EUR
1137+0.063 EUR
3000+0.054 EUR
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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248+0.29 EUR
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BC850BWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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BC850CWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pvt412.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
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12+6.48 EUR
15+5 EUR
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PV
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
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50+6.38 EUR
100+5.73 EUR
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PVT322PBF PVT322PBF INFINEON TECHNOLOGIES pvt322.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
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IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES irfi540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Technology: HEXFET®
Case: TO220FP
Kind of channel: enhancement
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15+4.76 EUR
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S29AL008J70TFI020 S29AL008J70TFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
auf Bestellung 514 Stücke:
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21+3.49 EUR
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XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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CY3210-MINIPROG1 INFINEON TECHNOLOGIES Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Type of development kit: Cypress
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Interface: USB
Software: included
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Communictions protocol: DALI
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
auf Bestellung 167 Stücke:
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49+1.47 EUR
52+1.4 EUR
55+1.32 EUR
100+1.19 EUR
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CY8C5267AXI-LP051 CY8C5267AXI-LP051 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Mounting: SMD
Interface: GPIO; I2C; SPI; UART; USB
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
Kind of core: 32-bit
auf Bestellung 90 Stücke:
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5+14.34 EUR
10+14.27 EUR
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IRF7343TRPBF IRF7343TRPBF INFINEON TECHNOLOGIES irf7343pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5626 Stücke:
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42+1.73 EUR
64+1.13 EUR
100+0.74 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.49 EUR
4000+0.45 EUR
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IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES IRS20957S.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Kind of package: reel; tape
Case: SO16
Mounting: SMD
Number of channels: 1
Supply voltage: 10...15V DC
Type of integrated circuit: audio amplifier
Amplifier class: D
auf Bestellung 629 Stücke:
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25+2.89 EUR
27+2.7 EUR
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IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES irf7316pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1605 Stücke:
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43+1.7 EUR
61+1.18 EUR
87+0.83 EUR
100+0.72 EUR
200+0.64 EUR
250+0.61 EUR
500+0.56 EUR
1000+0.51 EUR
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES BSS83PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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157+0.46 EUR
232+0.31 EUR
341+0.21 EUR
402+0.18 EUR
574+0.12 EUR
1000+0.11 EUR
3000+0.087 EUR
6000+0.078 EUR
9000+0.074 EUR
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IRL6372TRPBF IRL6372TRPBF INFINEON TECHNOLOGIES irl6372pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
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100+0.72 EUR
112+0.64 EUR
125+0.57 EUR
154+0.46 EUR
174+0.41 EUR
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CY7C1021DV33-10ZSXI CY7C1021DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
auf Bestellung 1056 Stücke:
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34+2.13 EUR
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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Turn-off time: 150ns
Supply voltage: 10...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 168 Stücke:
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34+2.16 EUR
38+1.89 EUR
41+1.76 EUR
43+1.67 EUR
50+1.62 EUR
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IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 1W
Voltage class: 600V
auf Bestellung 51 Stücke:
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23+3.19 EUR
25+2.9 EUR
29+2.52 EUR
31+2.36 EUR
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IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 625mW
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 64 Stücke:
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35+2.07 EUR
37+1.94 EUR
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IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 32 Stücke:
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21+3.56 EUR
23+3.15 EUR
25+2.87 EUR
29+2.52 EUR
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IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 764 Stücke:
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87+0.83 EUR
117+0.62 EUR
186+0.38 EUR
250+0.33 EUR
500+0.29 EUR
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 INFINEON TECHNOLOGIES IPD65R600C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Case: SO8
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
35+2.07 EUR
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IRFR2905ZTRPBF IRFR2905ZTRPBF INFINEON TECHNOLOGIES IRFx2905ZPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
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AUIRFR2905ZTRL INFINEON TECHNOLOGIES auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IRFB4127PBF IRFB4127PBF INFINEON TECHNOLOGIES irfb4127pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
33+2.2 EUR
42+1.73 EUR
46+1.57 EUR
53+1.36 EUR
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IRF7324TRPBF IRF7324TRPBF INFINEON TECHNOLOGIES irf7324pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BAV199E6327HTSA1 BAV199E6327HTSA1 INFINEON TECHNOLOGIES BAV199E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
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FM24CL04B-GTR FM24CL04B-GTR INFINEON TECHNOLOGIES Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES BFP760.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
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IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES irfb4227pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 70nC
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Drain current: 65A
Power dissipation: 190W
Drain-source voltage: 200V
Case: TO220AB
Polarisation: unipolar
auf Bestellung 817 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
38+1.92 EUR
42+1.73 EUR
50+1.52 EUR
100+1.32 EUR
250+1.1 EUR
500+1.02 EUR
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IRFB4227PBFXKMA1 IRFB4227PBFXKMA1 INFINEON TECHNOLOGIES irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
auf Bestellung 200 Stücke:
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26+2.8 EUR
41+1.76 EUR
47+1.53 EUR
52+1.39 EUR
100+1.26 EUR
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES irf7424pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.75 EUR
30+2.39 EUR
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ITS6035SEPKXUMA1 INFINEON TECHNOLOGIES Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+2.8 EUR
Mindestbestellmenge: 3000 Stücke
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SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES SPP11N80C3-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
35+2.04 EUR
50+1.79 EUR
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IRFP3006PBF IRFP3006PBF INFINEON TECHNOLOGIES IRFP3006PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.12 EUR
19+3.79 EUR
25+3.6 EUR
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BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES BTS50085-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.07 EUR
10+8.22 EUR
25+7.61 EUR
50+7.24 EUR
Mindestbestellmenge: 8 Stücke
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BTS441RG BTS441RG INFINEON TECHNOLOGIES BTS441RG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
17+4.29 EUR
25+3.85 EUR
100+3.65 EUR
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BTS6133D BTS6133D INFINEON TECHNOLOGIES BTS6133D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 606 Stücke:
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22+3.3 EUR
26+2.82 EUR
29+2.55 EUR
32+2.3 EUR
40+2.2 EUR
50+2.16 EUR
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BSP752R BSP752R INFINEON TECHNOLOGIES BSP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Technology: Classic PROFET
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
50+1.46 EUR
53+1.36 EUR
55+1.32 EUR
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BTS4300SGA BTS4300SGA INFINEON TECHNOLOGIES BTS4300SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2425 Stücke:
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27+2.66 EUR
42+1.73 EUR
48+1.52 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 27 Stücke
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
85+0.84 EUR
87+0.83 EUR
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
66+1.09 EUR
75+0.96 EUR
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES IPN70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES IPS70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES BSP129H6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Technology: SIPMOS™
auf Bestellung 1038 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
122+0.59 EUR
154+0.46 EUR
161+0.44 EUR
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
321+0.22 EUR
516+0.14 EUR
596+0.12 EUR
676+0.11 EUR
1000+0.099 EUR
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Kind of channel: enhancement
Technology: OptiMOS™ P
Case: PG-TSOP-6
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
125+0.57 EUR
186+0.39 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.29 EUR
3000+0.26 EUR
6000+0.25 EUR
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IRFR3410TRPBF description irfr3410pbf.pdf
IRFR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3410TRLPBF irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02G.pdf
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1794 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
52+1.4 EUR
61+1.17 EUR
67+1.07 EUR
76+0.94 EUR
77+0.93 EUR
Mindestbestellmenge: 52 Stücke
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IRLMS5703TRPBF irlms5703pbf.pdf
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF description irlms1503pbf.pdf
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Mounting: SMD
Polarisation: unipolar
Case: TSOP6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Power dissipation: 1.7W
Drain current: 3.2A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRLMS1902TRPBF irlms1902pbf.pdf
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRLMS2002TRPBF description irlms2002pbf.pdf
IRLMS2002TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BC850BE6327 BC850BE6327.pdf
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7507 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
358+0.2 EUR
506+0.14 EUR
767+0.093 EUR
903+0.079 EUR
1137+0.063 EUR
3000+0.054 EUR
Mindestbestellmenge: 358 Stücke
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BC850CE6327 BC850BE6327.pdf
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
248+0.29 EUR
Mindestbestellmenge: 248 Stücke
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BC850BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PVT412LSPBF pvt412.pdf
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
12+6.48 EUR
15+5 EUR
Mindestbestellmenge: 12 Stücke
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PV
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 3859 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
50+6.38 EUR
100+5.73 EUR
Mindestbestellmenge: 50 Stücke
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PVT322PBF pvt322.pdf
PVT322PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRFI540NPBF irfi540n.pdf
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Technology: HEXFET®
Case: TO220FP
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+4.76 EUR
Mindestbestellmenge: 15 Stücke
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S29AL008J70TFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
21+3.49 EUR
Mindestbestellmenge: 21 Stücke
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XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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CY3210-MINIPROG1 Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Type of development kit: Cypress
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Interface: USB
Software: included
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Communictions protocol: DALI
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
49+1.47 EUR
52+1.4 EUR
55+1.32 EUR
100+1.19 EUR
Mindestbestellmenge: 49 Stücke
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CY8C5267AXI-LP051 download
CY8C5267AXI-LP051
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Mounting: SMD
Interface: GPIO; I2C; SPI; UART; USB
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
Kind of core: 32-bit
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
5+14.34 EUR
10+14.27 EUR
Mindestbestellmenge: 5 Stücke
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IRF7343TRPBF description irf7343pbf.pdf
IRF7343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5626 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
42+1.73 EUR
64+1.13 EUR
100+0.74 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.49 EUR
4000+0.45 EUR
Mindestbestellmenge: 42 Stücke
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IRS20957STRPBF IRS20957S.pdf
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Kind of package: reel; tape
Case: SO16
Mounting: SMD
Number of channels: 1
Supply voltage: 10...15V DC
Type of integrated circuit: audio amplifier
Amplifier class: D
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.89 EUR
27+2.7 EUR
Mindestbestellmenge: 25 Stücke
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IRF7316TRPBF description irf7316pbf.pdf
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
43+1.7 EUR
61+1.18 EUR
87+0.83 EUR
100+0.72 EUR
200+0.64 EUR
250+0.61 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 43 Stücke
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BSS83PH6327XTSA1 BSS83PH6327XTSA1-dte.pdf
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9925 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
157+0.46 EUR
232+0.31 EUR
341+0.21 EUR
402+0.18 EUR
574+0.12 EUR
1000+0.11 EUR
3000+0.087 EUR
6000+0.078 EUR
9000+0.074 EUR
Mindestbestellmenge: 157 Stücke
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IRL6372TRPBF irl6372pbf.pdf
IRL6372TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
100+0.72 EUR
112+0.64 EUR
125+0.57 EUR
154+0.46 EUR
174+0.41 EUR
Mindestbestellmenge: 100 Stücke
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CY7C1021DV33-10ZSXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021DV33-10ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
34+2.13 EUR
Mindestbestellmenge: 34 Stücke
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IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Turn-off time: 150ns
Supply voltage: 10...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
34+2.16 EUR
38+1.89 EUR
41+1.76 EUR
43+1.67 EUR
50+1.62 EUR
Mindestbestellmenge: 34 Stücke
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IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 1W
Voltage class: 600V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
23+3.19 EUR
25+2.9 EUR
29+2.52 EUR
31+2.36 EUR
Mindestbestellmenge: 23 Stücke
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IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 625mW
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
35+2.07 EUR
37+1.94 EUR
Mindestbestellmenge: 35 Stücke
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IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
21+3.56 EUR
23+3.15 EUR
25+2.87 EUR
29+2.52 EUR
Mindestbestellmenge: 21 Stücke
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IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
87+0.83 EUR
117+0.62 EUR
186+0.38 EUR
250+0.33 EUR
500+0.29 EUR
Mindestbestellmenge: 87 Stücke
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IPD65R600C6BTMA1 IPD65R600C6-DTE.pdf
IPD65R600C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IR2128SPBF IR21271SPBF.pdf
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 150ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
Case: SO8
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
34+2.14 EUR
35+2.07 EUR
Mindestbestellmenge: 34 Stücke
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IRFR2905ZTRPBF IRFx2905ZPBF.pdf
IRFR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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AUIRFR2905ZTRL auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFB4127PBF irfb4127pbf.pdf
IRFB4127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
31+2.36 EUR
33+2.2 EUR
42+1.73 EUR
46+1.57 EUR
53+1.36 EUR
Mindestbestellmenge: 31 Stücke
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IRF7324TRPBF irf7324pbf.pdf
IRF7324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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BAV199E6327HTSA1 BAV199E6327.pdf
BAV199E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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FM24CL04B-GTR Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL04B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BFP760H6327XTSA1 BFP760.pdf
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
4+17.88 EUR
Mindestbestellmenge: 4 Stücke
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IRFB4227PBF irfb4227pbf.pdf
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 70nC
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Drain current: 65A
Power dissipation: 190W
Drain-source voltage: 200V
Case: TO220AB
Polarisation: unipolar
auf Bestellung 817 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
35+2.1 EUR
38+1.92 EUR
42+1.73 EUR
50+1.52 EUR
100+1.32 EUR
250+1.1 EUR
500+1.02 EUR
Mindestbestellmenge: 35 Stücke
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IRFB4227PBFXKMA1 irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.8 EUR
41+1.76 EUR
47+1.53 EUR
52+1.39 EUR
100+1.26 EUR
Mindestbestellmenge: 26 Stücke
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IRF7424TRPBF irf7424pbf.pdf
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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ICE2HS01GXUMA1 ICE2HS01G.pdf
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.75 EUR
30+2.39 EUR
Mindestbestellmenge: 27 Stücke
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ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3000+2.8 EUR
Mindestbestellmenge: 3000 Stücke
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SPP11N80C3 SPP11N80C3-dte.pdf
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.76 EUR
35+2.04 EUR
50+1.79 EUR
Mindestbestellmenge: 26 Stücke
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IRFP3006PBF IRFP3006PBF.pdf
IRFP3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.12 EUR
19+3.79 EUR
25+3.6 EUR
Mindestbestellmenge: 14 Stücke
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BTS50085-1TMA BTS50085-1TMA.pdf
BTS50085-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
8+9.07 EUR
10+8.22 EUR
25+7.61 EUR
50+7.24 EUR
Mindestbestellmenge: 8 Stücke
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BTS441RG BTS441RG.pdf
BTS441RG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+4.86 EUR
17+4.29 EUR
25+3.85 EUR
100+3.65 EUR
Mindestbestellmenge: 15 Stücke
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BTS6133D BTS6133D.pdf
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
22+3.3 EUR
26+2.82 EUR
29+2.55 EUR
32+2.3 EUR
40+2.2 EUR
50+2.16 EUR
Mindestbestellmenge: 22 Stücke
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BSP752R BSP752R.pdf
BSP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Technology: Classic PROFET
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
37+1.96 EUR
50+1.46 EUR
53+1.36 EUR
55+1.32 EUR
Mindestbestellmenge: 37 Stücke
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BTS4300SGA BTS4300SGA.pdf
BTS4300SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.66 EUR
42+1.73 EUR
48+1.52 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 27 Stücke
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IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
46+1.59 EUR
85+0.84 EUR
87+0.83 EUR
Mindestbestellmenge: 46 Stücke
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IPAN70R360P7SXKSA1 IPAN70R360P7S.pdf
IPAN70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
43+1.69 EUR
66+1.09 EUR
75+0.96 EUR
Mindestbestellmenge: 43 Stücke
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IPN70R360P7SATMA1 IPN70R360P7S.pdf
IPN70R360P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPS70R360P7SAKMA1 IPS70R360P7S.pdf
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSP129H6327XTSA1 BSP129H6327-DTE.pdf
BSP129H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Technology: SIPMOS™
auf Bestellung 1038 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
85+0.84 EUR
122+0.59 EUR
154+0.46 EUR
161+0.44 EUR
Mindestbestellmenge: 85 Stücke
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BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
321+0.22 EUR
516+0.14 EUR
596+0.12 EUR
676+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 239 Stücke
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
BSL207SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Kind of channel: enhancement
Technology: OptiMOS™ P
Case: PG-TSOP-6
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
90+0.8 EUR
125+0.57 EUR
186+0.39 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.29 EUR
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 90 Stücke
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