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CY8C27443-24PVXI INFINEON TECHNOLOGIES download description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
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CY8C28403-24PVXI CY8C28403-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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CY8C28445-24PVXI CY8C28445-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES BSZ100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 39A
Gate-source voltage: ±20V
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BDP 947 H6327 TR INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: BDP 947 H6327 TR
auf Bestellung 2000 Stücke:
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2000+0.3 EUR
Mindestbestellmenge: 2000
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 190 Stücke:
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40+1.83 EUR
45+1.6 EUR
50+1.46 EUR
56+1.29 EUR
57+1.26 EUR
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 1W
Kind of package: tube
Supply voltage: 10...20V DC
Topology: single transistor
Turn-off time: 105ns
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31+2.33 EUR
50+2.16 EUR
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IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES IPP110N20NA-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IAUC100N04S6N022ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IAUC100N04S6N028ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES BSS806NEH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3732 Stücke:
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209+0.34 EUR
286+0.25 EUR
403+0.18 EUR
465+0.15 EUR
628+0.11 EUR
1000+0.099 EUR
3000+0.082 EUR
Mindestbestellmenge: 209
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES BSS806NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5413 Stücke:
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157+0.46 EUR
235+0.3 EUR
337+0.21 EUR
395+0.18 EUR
563+0.13 EUR
1000+0.11 EUR
3000+0.089 EUR
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BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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PVD1352NPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 841 Stücke:
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50+3.59 EUR
150+3.22 EUR
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES BCR108WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1121 Stücke:
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358+0.2 EUR
463+0.15 EUR
532+0.13 EUR
589+0.12 EUR
715+0.1 EUR
725+0.099 EUR
1000+0.089 EUR
Mindestbestellmenge: 358
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IPDD60R080G7XTMA1 INFINEON TECHNOLOGIES IPDD60R080G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Mounting: SMD
Case: PG-HDSOP-10-1
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Produkt ist nicht verfügbar
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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 925 Stücke:
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55+1.3 EUR
87+0.83 EUR
106+0.68 EUR
150+0.65 EUR
525+0.62 EUR
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES IGCM10F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 228 Stücke:
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7+10.87 EUR
8+9.12 EUR
10+8.21 EUR
Mindestbestellmenge: 7
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IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES IPP65R225C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BTS6142D BTS6142D INFINEON TECHNOLOGIES BTS6142D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Kind of integrated circuit: high-side
Mounting: SMD
Technology: High Current PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-5
On-state resistance: 10mΩ
Number of channels: 1
Output current: 7A
Supply voltage: 5.5...38V DC
Produkt ist nicht verfügbar
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SPD15P10PGBTMA1 SPD15P10PGBTMA1 INFINEON TECHNOLOGIES SPD15P10PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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TLE4264GHTSA1 INFINEON TECHNOLOGIES TLE4264.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH10G65C6XKSA1 IDH10G65C6XKSA1 INFINEON TECHNOLOGIES IDH10G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 39 Stücke:
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19+3.93 EUR
Mindestbestellmenge: 19
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IDH10G65C5 IDH10G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
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BTS70302EPAXUMA1 BTS70302EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
auf Bestellung 2965 Stücke:
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42+1.73 EUR
44+1.63 EUR
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-DSO-8
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.56W
Drain current: 7.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
80+0.9 EUR
94+0.77 EUR
120+0.6 EUR
143+0.5 EUR
166+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 65
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CY8C4248LQI-BL583 INFINEON TECHNOLOGIES infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
Produkt ist nicht verfügbar
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SPP18P06PHXKSA1 SPP18P06PHXKSA1 INFINEON TECHNOLOGIES SPP18P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
auf Bestellung 558 Stücke:
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34+2.16 EUR
44+1.63 EUR
50+1.46 EUR
57+1.26 EUR
64+1.13 EUR
100+1.02 EUR
500+0.83 EUR
Mindestbestellmenge: 34
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S25FL064LABBHV030 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
Produkt ist nicht verfügbar
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S26KS512SDABHV030 INFINEON TECHNOLOGIES CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S28HL01GTFPBHV030 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 166MHz
Produkt ist nicht verfügbar
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S29GL064S80BHV030 INFINEON TECHNOLOGIES infineon-s29gl064s-64-mbit8-mbyte3-datasheet-en.pdf CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRF7815TRPBF IRF7815TRPBF INFINEON TECHNOLOGIES irf7815pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR380L3E6327 BFR380L3E6327 INFINEON TECHNOLOGIES BFR380L3E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Frequency: 14GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
auf Bestellung 11825 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
962+0.074 EUR
1009+0.071 EUR
1060+0.067 EUR
1097+0.065 EUR
2500+0.062 EUR
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BFR193L3E6327 BFR193L3E6327 INFINEON TECHNOLOGIES BFR193L3E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 20V
auf Bestellung 751 Stücke:
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200+0.36 EUR
325+0.22 EUR
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BTS500851TMBAKSA1 INFINEON TECHNOLOGIES Infineon-BTS50085-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa435af031147 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES BSR316PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Application: automotive industry
Produkt ist nicht verfügbar
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IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES IPB65R110CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XC8888FFI5VACFXUMA1 XC8888FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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BTS70041EPPXUMA1 BTS70041EPPXUMA1 INFINEON TECHNOLOGIES BTS70041EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 220µs
Turn-on time: 210µs
On-state resistance: 8mΩ
Number of channels: 1
Output current: 15A
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Case: SO14-W
Kind of integrated circuit: high-side
auf Bestellung 2845 Stücke:
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29+2.52 EUR
39+1.84 EUR
42+1.72 EUR
50+1.63 EUR
Mindestbestellmenge: 29
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BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES BTS5090-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
auf Bestellung 1775 Stücke:
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26+2.76 EUR
40+1.79 EUR
46+1.59 EUR
100+1.33 EUR
250+1.2 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 26
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BTS3050EJ BTS3050EJ INFINEON TECHNOLOGIES BTS3050EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
auf Bestellung 2795 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
53+1.36 EUR
64+1.13 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 48
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BTS5012SDA BTS5012SDA INFINEON TECHNOLOGIES BTS5012SDA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 12mΩ
Number of channels: 1
Output current: 6A
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
auf Bestellung 990 Stücke:
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26+2.8 EUR
33+2.2 EUR
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: PG-TO252-3
Kind of integrated circuit: low-side
auf Bestellung 1071 Stücke:
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38+1.89 EUR
42+1.73 EUR
45+1.62 EUR
50+1.44 EUR
100+1.26 EUR
250+1.16 EUR
500+1.07 EUR
1000+1.06 EUR
Mindestbestellmenge: 38
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
47+1.54 EUR
55+1.3 EUR
100+1.17 EUR
250+1.09 EUR
500+1.03 EUR
1000+0.93 EUR
Mindestbestellmenge: 42
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES BSC010N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES BSC010N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES BCR320UE6327.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...25V DC
Topology: single transistor
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
149+0.48 EUR
Mindestbestellmenge: 148
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BCR321UE6327HTSA1 INFINEON TECHNOLOGIES dgdl?fileId=5546d4624b0b249c014b7d69949b463b Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
Produkt ist nicht verfügbar
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES SN7002NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
355+0.2 EUR
529+0.14 EUR
633+0.11 EUR
940+0.076 EUR
1092+0.065 EUR
Mindestbestellmenge: 264
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES IPW60R031CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.5 EUR
9+8.75 EUR
10+8.21 EUR
Mindestbestellmenge: 8
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 158 Stücke:
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9+8.41 EUR
10+7.42 EUR
11+6.98 EUR
Mindestbestellmenge: 9
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES IPW60R037CSFDXKSA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCV46E6327 BCV46E6327 INFINEON TECHNOLOGIES BCV46E6327.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
auf Bestellung 8740 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
336+0.21 EUR
455+0.16 EUR
512+0.14 EUR
1000+0.11 EUR
3000+0.098 EUR
Mindestbestellmenge: 250
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BCR112E6327HTSA1
+1
 		BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
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BCV61BE6327 BCV61BE6327 INFINEON TECHNOLOGIES BCV61BE6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
auf Bestellung 928 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
248+0.29 EUR
334+0.21 EUR
379+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 148
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 5972 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
253+0.28 EUR
285+0.25 EUR
439+0.16 EUR
527+0.14 EUR
610+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 200
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BCR135E6327 BCR135E6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
372+0.19 EUR
Mindestbestellmenge: 372
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CY8C27443-24PVXI description download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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CY8C28403-24PVXI CY8C28243-24PVXI.pdf
CY8C28403-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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CY8C28445-24PVXI CY8C28243-24PVXI.pdf
CY8C28445-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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BSZ100N03MSGATMA1 BSZ100N03MSG-DTE.pdf
BSZ100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 39A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BDP 947 H6327 TR
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BDP 947 H6327 TR
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.3 EUR
Mindestbestellmenge: 2000
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IR2117SPBF description ir2117.pdf
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
45+1.6 EUR
50+1.46 EUR
56+1.29 EUR
57+1.26 EUR
Mindestbestellmenge: 40
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IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 125ns
Power: 1W
Kind of package: tube
Supply voltage: 10...20V DC
Topology: single transistor
Turn-off time: 105ns
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
50+2.16 EUR
Mindestbestellmenge: 31
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IPP110N20NAAKSA1 IPP110N20NA-DTE.pdf
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6N022ATMA1 Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC100N04S6N028ATMA1 Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1.pdf
BSS806NEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
286+0.25 EUR
403+0.18 EUR
465+0.15 EUR
628+0.11 EUR
1000+0.099 EUR
3000+0.082 EUR
Mindestbestellmenge: 209
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BSS806NH6327XTSA1 BSS806NH6327XTSA1.pdf
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
235+0.3 EUR
337+0.21 EUR
395+0.18 EUR
563+0.13 EUR
1000+0.11 EUR
3000+0.089 EUR
Mindestbestellmenge: 157
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BC858BE6327 BC858CE6327.pdf
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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PVD1352NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.59 EUR
150+3.22 EUR
Mindestbestellmenge: 50
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BCR108SH6327 BCR108WH6327.pdf
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
463+0.15 EUR
532+0.13 EUR
589+0.12 EUR
715+0.1 EUR
725+0.099 EUR
1000+0.089 EUR
Mindestbestellmenge: 358
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IPDD60R080G7XTMA1 IPDD60R080G7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Mounting: SMD
Case: PG-HDSOP-10-1
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Produkt ist nicht verfügbar
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IRFU5305PBF description irfr5305pbf.pdf
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
87+0.83 EUR
106+0.68 EUR
150+0.65 EUR
525+0.62 EUR
Mindestbestellmenge: 55
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IGCM10F60GAXKMA1 IGCM10F60GA.pdf
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.87 EUR
8+9.12 EUR
10+8.21 EUR
Mindestbestellmenge: 7
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IPP65R225C7XKSA1 IPP65R225C7-DTE.pdf
IPP65R225C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BTS6142D BTS6142D.pdf
BTS6142D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Kind of integrated circuit: high-side
Mounting: SMD
Technology: High Current PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-5
On-state resistance: 10mΩ
Number of channels: 1
Output current: 7A
Supply voltage: 5.5...38V DC
Produkt ist nicht verfügbar
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SPD15P10PGBTMA1 SPD15P10PGBTMA1-DTE.pdf
SPD15P10PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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TLE4264GHTSA1 TLE4264.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH10G65C6XKSA1 IDH10G65C6.pdf
IDH10G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
Mindestbestellmenge: 19
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IDH10G65C5
IDH10G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
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BTS70302EPAXUMA1 Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f
BTS70302EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
44+1.63 EUR
Mindestbestellmenge: 42
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BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-DSO-8
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.56W
Drain current: 7.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
80+0.9 EUR
94+0.77 EUR
120+0.6 EUR
143+0.5 EUR
166+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 65
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CY8C4248LQI-BL583 infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
Produkt ist nicht verfügbar
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SPP18P06PHXKSA1 SPP18P06PHXKSA1-DTE.pdf
SPP18P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
44+1.63 EUR
50+1.46 EUR
57+1.26 EUR
64+1.13 EUR
100+1.02 EUR
500+0.83 EUR
Mindestbestellmenge: 34
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S25FL064LABBHV030 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
Produkt ist nicht verfügbar
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S26KS512SDABHV030 CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S28HL01GTFPBHV030 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 166MHz
Produkt ist nicht verfügbar
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S29GL064S80BHV030 infineon-s29gl064s-64-mbit8-mbyte3-datasheet-en.pdf CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRF7815TRPBF irf7815pbf.pdf
IRF7815TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR380L3E6327 BFR380L3E6327-dte.pdf
BFR380L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Frequency: 14GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
auf Bestellung 11825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
962+0.074 EUR
1009+0.071 EUR
1060+0.067 EUR
1097+0.065 EUR
2500+0.062 EUR
Mindestbestellmenge: 834
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BFR193L3E6327 BFR193L3E6327-dte.pdf
BFR193L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Kind of transistor: RF
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 20V
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
325+0.22 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BTS500851TMBAKSA1 Infineon-BTS50085-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa435af031147
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 BSR316PH6327XTSA1.pdf
BSR316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Application: automotive industry
Produkt ist nicht verfügbar
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IPB65R110CFDATMA1 IPB65R110CFD-DTE.pdf
IPB65R110CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC8888FFI5VACFXUMA1 XC88X-DTE.pdf
XC8888FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS70041EPPXUMA1 BTS70041EPP.pdf
BTS70041EPPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 220µs
Turn-on time: 210µs
On-state resistance: 8mΩ
Number of channels: 1
Output current: 15A
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Case: SO14-W
Kind of integrated circuit: high-side
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
39+1.84 EUR
42+1.72 EUR
50+1.63 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BTS5090-1EJA BTS5090-1EJA.pdf
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
40+1.79 EUR
46+1.59 EUR
100+1.33 EUR
250+1.2 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 26
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BTS3050EJ BTS3050EJ.pdf
BTS3050EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
auf Bestellung 2795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
53+1.36 EUR
64+1.13 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 48
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BTS5012SDA BTS5012SDA.pdf
BTS5012SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 12mΩ
Number of channels: 1
Output current: 6A
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
33+2.2 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BTS3035TF BTS3035TF.pdf
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: PG-TO252-3
Kind of integrated circuit: low-side
auf Bestellung 1071 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
42+1.73 EUR
45+1.62 EUR
50+1.44 EUR
100+1.26 EUR
250+1.16 EUR
500+1.07 EUR
1000+1.06 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
47+1.54 EUR
55+1.3 EUR
100+1.17 EUR
250+1.09 EUR
500+1.03 EUR
1000+0.93 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSATMA1 BSC010N04LS-DTE.pdf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSI-DTE.pdf
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR320UE6327HTSA1 BCR320UE6327.pdf
BCR320UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...25V DC
Topology: single transistor
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
149+0.48 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BCR321UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b7d69949b463b
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SN7002NH6327XTSA2 SN7002NH6327XTSA2.pdf
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
355+0.2 EUR
529+0.14 EUR
633+0.11 EUR
940+0.076 EUR
1092+0.065 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R031CFD7 IPW60R031CFD7.pdf
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.5 EUR
9+8.75 EUR
10+8.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.41 EUR
10+7.42 EUR
11+6.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV46E6327 BCV46E6327.pdf
BCV46E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
auf Bestellung 8740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
336+0.21 EUR
455+0.16 EUR
512+0.14 EUR
1000+0.11 EUR
3000+0.098 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BCV61BE6327 BCV61BE6327-DTE.pdf
BCV61BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
auf Bestellung 928 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
248+0.29 EUR
334+0.21 EUR
379+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BCR505E6327 BCR505.pdf
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 5972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
285+0.25 EUR
439+0.16 EUR
527+0.14 EUR
610+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BCR135E6327 bcr135.pdf
BCR135E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
372+0.19 EUR
Mindestbestellmenge: 372
Im Einkaufswagen  Stück im Wert von  UAH
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