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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 2 Stücke:
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2+35.75 EUR
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BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES BSZ100N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 36A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES irlh5030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Polarisation: unipolar
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 INFINEON TECHNOLOGIES IPA80R1K0CE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
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32+2.25 EUR
53+1.37 EUR
57+1.26 EUR
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IPD70R360P7SAUMA1 IPD70R360P7SAUMA1 INFINEON TECHNOLOGIES IPD70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 13 Stücke:
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13+5.51 EUR
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IRFP90N20DPBF IRFP90N20DPBF INFINEON TECHNOLOGIES irfp90n20d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.41 EUR
18+4.16 EUR
25+3.79 EUR
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CY7C65630-56LTXC INFINEON TECHNOLOGIES Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; QFN56; Core: 8-bit
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65630-56LTXI INFINEON TECHNOLOGIES Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65631-56LTXC INFINEON TECHNOLOGIES Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-48AXC CY7C65632-48AXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXCT INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXC CY7C65642-48AXC INFINEON TECHNOLOGIES Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXCT CY7C65642-48AXCT INFINEON TECHNOLOGIES Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IR2011SPBF IR2011SPBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
auf Bestellung 68 Stücke:
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41+1.76 EUR
47+1.53 EUR
51+1.42 EUR
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Voltage class: 200V
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 20 Stücke:
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14+5.39 EUR
15+4.95 EUR
16+4.7 EUR
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IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Case: DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
auf Bestellung 46 Stücke:
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18+4.06 EUR
22+3.36 EUR
25+3.22 EUR
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AUIR2085STR AUIR2085STR INFINEON TECHNOLOGIES auir2085s.pdf?fileId=5546d462533600a4015355a82609133f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES BCR166.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 36 Stücke:
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36+1.99 EUR
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BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES BCR162.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
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5+14.3 EUR
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BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 INFINEON TECHNOLOGIES BSC123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 12.3mΩ
Power dissipation: 66W
Gate-source voltage: ±20V
Drain current: 55A
Drain-source voltage: 80V
Polarisation: unipolar
Technology: OptiMOS™ 3
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
76+0.95 EUR
100+0.74 EUR
250+0.7 EUR
500+0.67 EUR
1000+0.62 EUR
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES BTS500801TEA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Output voltage: 39V
Technology: High Current PROFET
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
500+2.57 EUR
1000+2.43 EUR
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES BTS50080-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 962 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
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SPD07N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES IPP045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.5mΩ
Drain current: 100A
Gate-source voltage: ±20V
Power dissipation: 214W
Drain-source voltage: 100V
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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28+2.56 EUR
37+1.97 EUR
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES irf7805zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4621 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
113+0.63 EUR
141+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.34 EUR
Mindestbestellmenge: 77 Stücke
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES BFP405.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62 Stücke
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES FP15R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2 Stücke
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES FP75R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+323.04 EUR
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES BFP450H6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Kind of transistor: RF
Technology: SIEGET™
Case: SOT343
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Frequency: 24GHz
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
140+0.51 EUR
187+0.38 EUR
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
272+0.26 EUR
438+0.16 EUR
536+0.13 EUR
638+0.11 EUR
1000+0.091 EUR
Mindestbestellmenge: 186 Stücke
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.7A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91 Stücke
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Produkt ist nicht verfügbar
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
21+3.4 EUR
Mindestbestellmenge: 16 Stücke
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1547 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
43+1.68 EUR
48+1.51 EUR
66+1.1 EUR
100+0.96 EUR
125+0.92 EUR
250+0.81 EUR
500+0.75 EUR
Mindestbestellmenge: 38 Stücke
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES irf7319pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES irl3103spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES IRFH7084TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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DZ1070N22K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 1.1kA
Produkt ist nicht verfügbar
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DZ1070N18K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N28K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DZ1070N26K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BCX71JE6327HTSA1 INFINEON TECHNOLOGIES bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES irf2907zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16 Stücke
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IMBG65R260M1HXTMA1 INFINEON TECHNOLOGIES Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.63 EUR
Mindestbestellmenge: 1000 Stücke
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FM25L16B-GTR FM25L16B-GTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.89 EUR
25+2.86 EUR
Mindestbestellmenge: 19 Stücke
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 INFINEON TECHNOLOGIES BSC160N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES SMBT3904SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.13 EUR
Mindestbestellmenge: 63 Stücke
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CY8CMBR3102-SX1I CY8CMBR3102-SX1I INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4900 Stücke
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CY8CMBR3108-LQXIT INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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CY8CMBR3106S-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
490+1.22 EUR
Mindestbestellmenge: 490 Stücke
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IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+35.75 EUR
Mindestbestellmenge: 2 Stücke
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BSZ100N03LSGATMA1 BSZ100N03LSG-DTE.pdf
BSZ100N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 36A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRLH5030TRPBF irlh5030pbf.pdf
IRLH5030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Polarisation: unipolar
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IPA80R1K0CEXKSA2 IPA80R1K0CE.pdf
IPA80R1K0CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
32+2.25 EUR
53+1.37 EUR
57+1.26 EUR
Mindestbestellmenge: 32 Stücke
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IPD70R360P7SAUMA1 IPD70R360P7S.pdf
IPD70R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
13+5.51 EUR
Mindestbestellmenge: 13 Stücke
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IRFP90N20DPBF irfp90n20d.pdf
IRFP90N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.41 EUR
18+4.16 EUR
25+3.79 EUR
Mindestbestellmenge: 14 Stücke
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CY7C65630-56LTXC Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; QFN56; Core: 8-bit
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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CY7C65630-56LTXI Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
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CY7C65631-56LTXC Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
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CY7C65632-48AXC download
CY7C65632-48AXC
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C65632-28LTXC download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C65632-28LTXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY7C65642-48AXC Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXC
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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CY7C65642-48AXCT Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXCT
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IR2011SPBF description IR2011SPBF.pdf
IR2011SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
41+1.76 EUR
47+1.53 EUR
51+1.42 EUR
Mindestbestellmenge: 41 Stücke
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IR2010PBF IR2010SPBF.pdf
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Voltage class: 200V
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.39 EUR
15+4.95 EUR
16+4.7 EUR
Mindestbestellmenge: 14 Stücke
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IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Case: DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
18+4.06 EUR
22+3.36 EUR
25+3.22 EUR
Mindestbestellmenge: 18 Stücke
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AUIR2085STR auir2085s.pdf?fileId=5546d462533600a4015355a82609133f
AUIR2085STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BCR166E6327 BCR166.pdf
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+1.99 EUR
Mindestbestellmenge: 36 Stücke
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BCR162E6327 BCR162.pdf
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
5+14.3 EUR
Mindestbestellmenge: 5 Stücke
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BSC123N08NS3GATMA1 BSC123N08NS3G-DTE.pdf
BSC123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 12.3mΩ
Power dissipation: 66W
Gate-source voltage: ±20V
Drain current: 55A
Drain-source voltage: 80V
Polarisation: unipolar
Technology: OptiMOS™ 3
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
54+1.34 EUR
76+0.95 EUR
100+0.74 EUR
250+0.7 EUR
500+0.67 EUR
1000+0.62 EUR
Mindestbestellmenge: 54 Stücke
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BTS50080-1TEA BTS500801TEA.pdf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Output voltage: 39V
Technology: High Current PROFET
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
500+2.57 EUR
1000+2.43 EUR
Mindestbestellmenge: 14 Stücke
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BTS50080-1TMA BTS50080-1TMA.pdf
BTS50080-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 962 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12 Stücke
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPP045N10N3GXKSA1 IPP045N10N3G-DTE.pdf
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.5mΩ
Drain current: 100A
Gate-source voltage: ±20V
Power dissipation: 214W
Drain-source voltage: 100V
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
28+2.56 EUR
37+1.97 EUR
Mindestbestellmenge: 28 Stücke
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IRF7805ZTRPBF irf7805zpbf.pdf
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRF3205ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4621 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
77+0.93 EUR
113+0.63 EUR
141+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.34 EUR
Mindestbestellmenge: 77 Stücke
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BFP405H6327XTSA1 BFP405.pdf
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62 Stücke
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FP15R12W1T4_B3 FP15R12W1T4B3.pdf
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2 Stücke
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FP75R12KT4 FP75R12KT4.pdf
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1+323.04 EUR
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BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BFP450H6327 BFP450H6327-dte.pdf
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Kind of transistor: RF
Technology: SIEGET™
Case: SOT343
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Frequency: 24GHz
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
122+0.59 EUR
140+0.51 EUR
187+0.38 EUR
Mindestbestellmenge: 122 Stücke
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BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
186+0.39 EUR
272+0.26 EUR
438+0.16 EUR
536+0.13 EUR
638+0.11 EUR
1000+0.091 EUR
Mindestbestellmenge: 186 Stücke
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.7A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91 Stücke
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IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Produkt ist nicht verfügbar
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IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.52 EUR
21+3.4 EUR
Mindestbestellmenge: 16 Stücke
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IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1547 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
38+1.92 EUR
43+1.68 EUR
48+1.51 EUR
66+1.1 EUR
100+0.96 EUR
125+0.92 EUR
250+0.81 EUR
500+0.75 EUR
Mindestbestellmenge: 38 Stücke
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IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRF7319TRPBF description irf7319pbf.pdf
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRL3103STRLPBF irl3103spbf.pdf
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFH7084TRPBF IRFH7084TRPBF.pdf
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRFS3206TRRPBF irfs3206pbf.pdf
IRFS3206TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DZ1070N22K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 1.1kA
Produkt ist nicht verfügbar
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DZ1070N18K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DZ1070N28K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DZ1070N26K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BCX71JE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRF2907ZPBF irf2907zpbf.pdf
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16 Stücke
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IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1000+2.63 EUR
Mindestbestellmenge: 1000 Stücke
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FM25L16B-GTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
19+3.89 EUR
25+2.86 EUR
Mindestbestellmenge: 19 Stücke
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BSC160N10NS3GATMA1 BSC160N10NS3G-DTE.pdf
BSC160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SMBT3904SH6327XTSA1 SMBT3904SH6327.pdf
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
63+1.13 EUR
Mindestbestellmenge: 63 Stücke
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CY8CMBR3102-SX1I Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3102-SX1I
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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CY8CMBR3108-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8CMBR3106S-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
490+1.22 EUR
Mindestbestellmenge: 490 Stücke
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