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TDB6HK180N16RRPB11BPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Category: IGBT modules
Description: Module: IGBT; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Produkt ist nicht verfügbar
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BAT5405E6327HTSA1 BAT5405E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 4537 Stücke:
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500+0.14 EUR
596+0.12 EUR
650+0.11 EUR
782+0.092 EUR
852+0.084 EUR
1017+0.07 EUR
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 475 Stücke:
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250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
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BFP640H6327XTSA1 BFP640H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP640-DS-v03_00-EN.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
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139+0.51 EUR
168+0.43 EUR
189+0.38 EUR
221+0.32 EUR
243+0.29 EUR
254+0.28 EUR
266+0.27 EUR
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BFP740H6327XTSA1 BFP740H6327XTSA1 INFINEON TECHNOLOGIES BFP740.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 44GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2397 Stücke:
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221+0.32 EUR
249+0.29 EUR
500+0.28 EUR
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES IPP600N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 60mΩ
Drain current: 25A
Power dissipation: 136W
Gate-source voltage: ±20V
Drain-source voltage: 250V
auf Bestellung 143 Stücke:
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21+3.46 EUR
25+2.92 EUR
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IPA600N25NM3SXKSA1 IPA600N25NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IPB600N25N3GATMA1 IPB600N25N3GATMA1 INFINEON TECHNOLOGIES IPB600N25N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 INFINEON TECHNOLOGIES BSC600N25NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD600N25N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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CYUSB3014-BZXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: USB controller; GPIO,I2C,I2S,SPI,UART; 512kBSRAM; TFBGA121
Type of integrated circuit: USB controller
Interface: GPIO; I2C; I2S; SPI; UART
Memory: 512kB SRAM
Supply voltage: 1.15...1.25V DC
Case: TFBGA121
Integrated circuit features: watchdog
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
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IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 36W
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 351 Stücke:
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36+1.99 EUR
40+1.79 EUR
46+1.57 EUR
51+1.42 EUR
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IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2729 Stücke:
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179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
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BSC050N04LSGATMA1 BSC050N04LSGATMA1 INFINEON TECHNOLOGIES BSC050N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
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CY7C4041KV13-667FCXC INFINEON TECHNOLOGIES Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IPA65R380C6XKSA1 IPA65R380C6XKSA1 INFINEON TECHNOLOGIES IPA65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 147 Stücke:
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35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
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IPB65R380C6ATMA1 IPB65R380C6ATMA1 INFINEON TECHNOLOGIES IPB65R380C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R380C6XKSA1 IPI65R380C6XKSA1 INFINEON TECHNOLOGIES IPI65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 INFINEON TECHNOLOGIES BSL296SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain current: 1.4A
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: OptiMOS™
Case: TSOP6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES IPT004N03L-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
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IPP60R180P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
auf Bestellung 80 Stücke:
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26+2.8 EUR
47+1.54 EUR
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IPB60R180P7ATMA1 IPB60R180P7ATMA1 INFINEON TECHNOLOGIES IPB60R180P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R180P7XKSA1 IPW60R180P7XKSA1 INFINEON TECHNOLOGIES IPW60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
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IPAW60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 INFINEON TECHNOLOGIES IPZA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPAW60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 908 Stücke:
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90+1.1 EUR
Mindestbestellmenge: 90
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TD500N16KOFHPSA1 TD500N16KOFHPSA1 INFINEON TECHNOLOGIES TD500N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF INFINEON TECHNOLOGIES TD500N18KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
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TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES TT500N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TT500N16KOFXPSA1 TT500N16KOFXPSA1 INFINEON TECHNOLOGIES TT500N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES TT570N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ600N16KOF TZ600N16KOF INFINEON TECHNOLOGIES TZ600N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ500N16KOF TZ500N16KOF INFINEON TECHNOLOGIES TZ500N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES TZ500N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
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FZ400R12KS4PHOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4 Category: IGBT modules
Description: Module: IGBT; 62MM
Type of semiconductor module: IGBT
Case: 62MM
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FZ400R12KE3B1HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75 Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
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FZ400R12KE3HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71 Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; screw; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
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FZ400R12KE4HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KE4-DS-v02_02-en_de.pdf?fileId=db3a30431f848401011fb7c1e8565958 Category: IGBT modules
Description: Module: IGBT; NTC thermistor; 62MM; screw; 2.4kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Topology: NTC thermistor
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
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FZ400R12KP4HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293 Category: IGBT modules
Description: Module: IGBT; 62MM; screw; 2.4kW; Field Stop,Trench
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES FZ400R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
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F3L400R12PT4B26BOSA1 INFINEON TECHNOLOGIES Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: 3-level inverter TNPC; NTC thermistor
Power dissipation: 2.15kW
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 4
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 INFINEON TECHNOLOGIES FF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; Ic: 580A; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 580A
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
10+240.21 EUR
Mindestbestellmenge: 10
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FF2400R12IP7PBPSA1 INFINEON TECHNOLOGIES FF2400R12IP7P_Rev1.00_6-9-23.pdf Category: IGBT modules
Description: Module: IGBT; Ic: 2.4kA; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+1013.2 EUR
Mindestbestellmenge: 2
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IRF7455TRPBF IRF7455TRPBF INFINEON TECHNOLOGIES irf7455pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES irs2336.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Number of channels: 6
Supply voltage: 11.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 655ns
Turn-off time: 580ns
Power: 2W
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BTS5180-2EKA BTS5180-2EKA INFINEON TECHNOLOGIES BTS5180-2EKA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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FP50R06W2E3B11BOMA1 INFINEON TECHNOLOGIES FP50R06W2E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Technology: EasyPIM™ 2B
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES BSP322PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Case: PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
On-state resistance: 0.8Ω
Gate-source voltage: ±20V
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
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DD180N22SHPSA1 INFINEON TECHNOLOGIES DD180N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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ISO1H811GAUMA1 ISO1H811GAUMA1 INFINEON TECHNOLOGIES ISO1H811G.pdf Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
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CY62157EV30LL-45ZSXI CY62157EV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Access time: 45ns
Operating voltage: 2.2...3.6V
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.47 EUR
10+8.82 EUR
Mindestbestellmenge: 8
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IR2117STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.2A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
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ITS711L1 ITS711L1 INFINEON TECHNOLOGIES ITS711L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Output voltage: 2...4V
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.96 EUR
19+3.78 EUR
25+3.62 EUR
50+3.58 EUR
Mindestbestellmenge: 15
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IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES IRFL024ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY8C28413-24PVXI CY8C28413-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C28433-24PVXI CY8C28433-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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TDB6HK180N16RRPB11BPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Produkt ist nicht verfügbar
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BAT5405E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 4537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
650+0.11 EUR
782+0.092 EUR
852+0.084 EUR
1017+0.07 EUR
Mindestbestellmenge: 500
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BAT5404E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
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BFP640H6327XTSA1 Infineon-BFP640-DS-v03_00-EN.pdf
BFP640H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2607 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
168+0.43 EUR
189+0.38 EUR
221+0.32 EUR
243+0.29 EUR
254+0.28 EUR
266+0.27 EUR
Mindestbestellmenge: 139
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BFP740H6327XTSA1 BFP740.pdf
BFP740H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 44GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
198+0.36 EUR
221+0.32 EUR
249+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 198
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IPP600N25N3GXKSA1 IPP600N25N3G-DTE.pdf
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 60mΩ
Drain current: 25A
Power dissipation: 136W
Gate-source voltage: ±20V
Drain-source voltage: 250V
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
25+2.92 EUR
Mindestbestellmenge: 21
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IPA600N25NM3SXKSA1 Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d
IPA600N25NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
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IPB600N25N3GATMA1 IPB600N25N3G-DTE.pdf
IPB600N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 BSC600N25NS3G-DTE.pdf
BSC600N25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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CYUSB3014-BZXC download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; GPIO,I2C,I2S,SPI,UART; 512kBSRAM; TFBGA121
Type of integrated circuit: USB controller
Interface: GPIO; I2C; I2S; SPI; UART
Memory: 512kB SRAM
Supply voltage: 1.15...1.25V DC
Case: TFBGA121
Integrated circuit features: watchdog
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
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IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 36W
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.79 EUR
46+1.57 EUR
51+1.42 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRPBF description irfr2405pbf.pdf
IRFR2405TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCV27E6327 BCV27E6327.pdf
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N04LSGATMA1 BSC050N04LSG-DTE.pdf
BSC050N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R380C6XKSA1 IPA65R380C6-DTE.pdf
IPA65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
Mindestbestellmenge: 35
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IPB65R380C6ATMA1 IPB65R380C6-DTE.pdf
IPB65R380C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R380C6XKSA1 IPI65R380C6-DTE.pdf
IPI65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1.pdf
BSL296SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain current: 1.4A
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: OptiMOS™
Case: TSOP6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT004N03LATMA1 IPT004N03L-DTE.pdf
IPT004N03LATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
47+1.54 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R180P7ATMA1 IPB60R180P7.pdf
IPB60R180P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R180P7XKSA1 IPW60R180P7.pdf
IPW60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPAW60R180P7SXKSA1 Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R180P7XKSA1 IPZA60R180P7.pdf
IPZA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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IPAW60R180P7SXKSA1 Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+1.1 EUR
Mindestbestellmenge: 90
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TD500N16KOFHPSA1 TD500N16KOF.pdf
TD500N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF.pdf
TD500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOF.pdf
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFXPSA1 TT500N16KOF.pdf
TT500N16KOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 TT570N16KOF.pdf
TT570N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF TZ600N16KOF.pdf
TZ600N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N16KOF TZ500N16KOF.pdf
TZ500N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N18KOF TZ500N18KOF.pdf
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 DF400R12KE3.pdf
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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FZ400R12KS4PHOSA1 Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Produkt ist nicht verfügbar
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FZ400R12KE3B1HOSA1 Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
Produkt ist nicht verfügbar
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FZ400R12KE3HOSA1 Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; screw; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
Produkt ist nicht verfügbar
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FZ400R12KE4HOSA1 Infineon-FZ400R12KE4-DS-v02_02-en_de.pdf?fileId=db3a30431f848401011fb7c1e8565958
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; 62MM; screw; 2.4kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Topology: NTC thermistor
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
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FZ400R12KP4HOSA1 Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; 62MM; screw; 2.4kW; Field Stop,Trench
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 FZ400R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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F3L400R12PT4B26BOSA1 Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: 3-level inverter TNPC; NTC thermistor
Power dissipation: 2.15kW
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 4
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 FF400R12KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 580A; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 580A
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+240.21 EUR
Mindestbestellmenge: 10
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FF2400R12IP7PBPSA1 FF2400R12IP7P_Rev1.00_6-9-23.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 2.4kA; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+1013.2 EUR
Mindestbestellmenge: 2
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IRF7455TRPBF irf7455pbf.pdf
IRF7455TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS23364DJPBF irs2336.pdf
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Number of channels: 6
Supply voltage: 11.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 655ns
Turn-off time: 580ns
Power: 2W
Produkt ist nicht verfügbar
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BTS5180-2EKA BTS5180-2EKA.pdf
BTS5180-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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FP50R06W2E3B11BOMA1 FP50R06W2E3B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Technology: EasyPIM™ 2B
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSP322PH6327XTSA1 BSP322PH6327XTSA1-dte.pdf
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Case: PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
On-state resistance: 0.8Ω
Gate-source voltage: ±20V
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
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DD180N22SHPSA1 DD180N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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ISO1H811GAUMA1 ISO1H811G.pdf
ISO1H811GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
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CY62157EV30LL-45ZSXI Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Access time: 45ns
Operating voltage: 2.2...3.6V
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.47 EUR
10+8.82 EUR
Mindestbestellmenge: 8
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IR2117STRPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.2A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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ITS711L1 ITS711L1.pdf
ITS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Output voltage: 2...4V
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.96 EUR
19+3.78 EUR
25+3.62 EUR
50+3.58 EUR
Mindestbestellmenge: 15
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IRFL024ZTRPBF IRFL024ZTRPBF.pdf
IRFL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C28413-24PVXI CY8C28243-24PVXI.pdf
CY8C28413-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C28433-24PVXI CY8C28243-24PVXI.pdf
CY8C28433-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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