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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
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BFP420FH6327XTSA1 INFINEON TECHNOLOGIES BFP420F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
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BFP410H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Current gain: 60
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 INFINEON TECHNOLOGIES ESD101B102ELSE6327XTSA1.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape
Mounting: SMD
Leakage current: 20nA
Max. forward impulse current: 2A
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Case: TSSLP-2-4
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500+0.14 EUR
596+0.12 EUR
695+0.1 EUR
807+0.089 EUR
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IPT007N06NATMA1 IPT007N06NATMA1 INFINEON TECHNOLOGIES IPT007N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhancement
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BFP650H6327 BFP650H6327 INFINEON TECHNOLOGIES BFP650H6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 2573 Stücke:
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90+0.8 EUR
124+0.58 EUR
141+0.51 EUR
157+0.46 EUR
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BFP650FH6327 BFP650FH6327 INFINEON TECHNOLOGIES BFP650FH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
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218+0.33 EUR
229+0.31 EUR
239+0.3 EUR
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BSC018N04LSGATMA1 BSC018N04LSGATMA1 INFINEON TECHNOLOGIES BSC018N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
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ESD5V3U2U03LRHE6327XTMA1 INFINEON TECHNOLOGIES esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Category: Protection diodes - arrays
Description: Diode: TVS array; 3A; unidirectional,common anode; TSLP-3-7
Type of diode: TVS array
Max. off-state voltage: 5.3V
Semiconductor structure: common anode; unidirectional
Case: TSLP-3-7
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 3A
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BSC066N06NSATMA1 BSC066N06NSATMA1 INFINEON TECHNOLOGIES BSC066N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
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DD100N16S DD100N16S INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Case: BG-SB20-1
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2+42.53 EUR
3+37.25 EUR
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CY7C1018DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1018DV33_CY7C1019DV33_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ee5537e7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory
Type of integrated circuit: SRAM memory
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 20.5nC
auf Bestellung 2167 Stücke:
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81+0.89 EUR
90+0.8 EUR
101+0.71 EUR
102+0.7 EUR
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IPD65R380E6ATMA1 IPD65R380E6ATMA1 INFINEON TECHNOLOGIES IPD65R380E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
On-state resistance: 0.4Ω
Gate-source voltage: ±20V
Power dissipation: 118W
Pulsed drain current: 30A
Technology: CoolMOS™ CE
Case: PG-TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Gate charge: 23nC
On-state resistance: 0.54Ω
Power dissipation: 86W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -22A; 83W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -22A
Gate charge: 39nC
On-state resistance: 65mΩ
Power dissipation: 83W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
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IPD65R1K4CFDBTMA1 IPD65R1K4CFDBTMA1 INFINEON TECHNOLOGIES IPD65R1K4CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
On-state resistance: 1.4Ω
Gate-source voltage: ±20V
Power dissipation: 28.4W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R225C7ATMA1 IPD65R225C7ATMA1 INFINEON TECHNOLOGIES IPD65R225C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
On-state resistance: 0.225Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R250C6XTMA1 IPD65R250C6XTMA1 INFINEON TECHNOLOGIES IPD65R250C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES IPD65R250E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6BTMA1 INFINEON TECHNOLOGIES IPD65R380E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R950CFDATMA1 IPD65R950CFDATMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES IPP60R120P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES IPB60R120P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: reel
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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XC886C6FFI5VACFXUMA1 XC886C6FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC8866FFI5VACFXUMA1 XC8866FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC8868FFI5VACFXUMA1 XC8868FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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XC886C6FFI3V3ACFXUMA1 XC886C6FFI3V3ACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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XC886C8FFI5VACFXUMA1 XC886C8FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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XC886LM6FFI5VACFXUMA1 XC886LM6FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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XC886LM8FFI5VACFXUMA1 XC886LM8FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES FF200R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+168.85 EUR
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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES FF200R17KE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
auf Bestellung 1 Stücke:
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1+235.79 EUR
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IPP90R340C3XKSA2 IPP90R340C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPP90R340C3-DS-v01_01-en.pdf?fileId=db3a30432313ff5e0123a8a4f73e5c14 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO220-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.7 EUR
17+4.23 EUR
Mindestbestellmenge: 16
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IPB90R340C3ATMA2 INFINEON TECHNOLOGIES Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: D2PAK; TO263
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 94nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES BAT6302VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
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19+3.76 EUR
Mindestbestellmenge: 19
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BSP171PL6327 BSP171PL6327 INFINEON TECHNOLOGIES BSP171PL6327-Infineon.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES BSZ105N04NSG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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S25FL512SAGBHMC10 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FL01GSAGBHMC10 INFINEON TECHNOLOGIES Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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TD92N16KOFHPSA2 TD92N16KOFHPSA2 INFINEON TECHNOLOGIES TD92N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw
Case: BG-PB20-1
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 120mA
Max. forward impulse current: 2.05kA
Max. forward voltage: 1.62V
Max. off-state voltage: 1.6kV
Load current: 92A
Max. load current: 160A
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
1+227.8 EUR
3+194.34 EUR
5+153.15 EUR
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BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES BCR141.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
126+0.57 EUR
Mindestbestellmenge: 126
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IRGB4620DPBF IRGB4620DPBF INFINEON TECHNOLOGIES IRGB4620DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 140W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IGCM04G60HAXKMA1 IGCM04G60HAXKMA1 INFINEON TECHNOLOGIES IGCM04G60HA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.54 EUR
9+8.09 EUR
10+7.16 EUR
14+6.79 EUR
Mindestbestellmenge: 8
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CY7C1062G30-10BGXI INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: PBGA119
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx32bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
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CY7C1062G30-10BGXIT INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES IPW60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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S25FS256TDPBHI113 INFINEON TECHNOLOGIES Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; QPI,Quad I/O,SPI; FBGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: FBGA24
Operating temperature: -40...85°C
Kind of memory: NOR
Interface: QPI; Quad I/O; SPI
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+6.66 EUR
Mindestbestellmenge: 2500
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IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES irf1010nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Gate charge: 0.12µC
On-state resistance: 11mΩ
Power dissipation: 180W
Gate-source voltage: ±20V
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
52+1.38 EUR
100+1.09 EUR
200+1.02 EUR
250+1 EUR
Mindestbestellmenge: 34
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AUIRF1010ZSTRL AUIRF1010ZSTRL INFINEON TECHNOLOGIES auirf1010z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDH20G120C5XKSA1 IDH20G120C5XKSA1 INFINEON TECHNOLOGIES IDH20G120C5-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Max. forward voltage: 1.5V
Power dissipation: 330W
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.07 EUR
Mindestbestellmenge: 9
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BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
Produkt ist nicht verfügbar
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BFP420FH6327XTSA1 BFP420F.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BFP410H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Current gain: 60
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1.pdf
ESD101B102ELSE6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape
Mounting: SMD
Leakage current: 20nA
Max. forward impulse current: 2A
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Case: TSSLP-2-4
auf Bestellung 8196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
695+0.1 EUR
807+0.089 EUR
Mindestbestellmenge: 500
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IPT007N06NATMA1 IPT007N06N-DTE.pdf
IPT007N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP650H6327 BFP650H6327-DTE.pdf
BFP650H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 2573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
124+0.58 EUR
141+0.51 EUR
157+0.46 EUR
Mindestbestellmenge: 90
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BFP650FH6327 BFP650FH6327-dte.pdf
BFP650FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 1430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
218+0.33 EUR
229+0.31 EUR
239+0.3 EUR
Mindestbestellmenge: 209
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BSC018N04LSGATMA1 BSC018N04LSG-DTE.pdf
BSC018N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
Hersteller: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 3A; unidirectional,common anode; TSLP-3-7
Type of diode: TVS array
Max. off-state voltage: 5.3V
Semiconductor structure: common anode; unidirectional
Case: TSLP-3-7
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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BSC066N06NSATMA1 BSC066N06NS-DTE.pdf
BSC066N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD100N16S DD100N16S.pdf
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Case: BG-SB20-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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CY7C1018DV33-10VXI Infineon-CY7C1018DV33_CY7C1019DV33_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ee5537e7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 20.5nC
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
90+0.8 EUR
101+0.71 EUR
102+0.7 EUR
Mindestbestellmenge: 81
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IPD65R380E6ATMA1 IPD65R380E6-DTE.pdf
IPD65R380E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R420CFDBTMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
On-state resistance: 0.4Ω
Gate-source voltage: ±20V
Power dissipation: 118W
Pulsed drain current: 30A
Technology: CoolMOS™ CE
Case: PG-TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R650CEAUMA1 Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Gate charge: 23nC
On-state resistance: 0.54Ω
Power dissipation: 86W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -22A; 83W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -22A
Gate charge: 39nC
On-state resistance: 65mΩ
Power dissipation: 83W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFD-DTE.pdf
IPD65R1K4CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
On-state resistance: 1.4Ω
Gate-source voltage: ±20V
Power dissipation: 28.4W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7-DTE.pdf
IPD65R225C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
On-state resistance: 0.225Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6-DTE.pdf
IPD65R250C6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6-DTE.pdf
IPD65R250E6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6-DTE.pdf
IPD65R380E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6-DTE.pdf
IPD65R600E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6-DTE.pdf
IPD65R600E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPP60R120P7 IPP60R120P7.pdf
IPP60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 IPB60R120P7.pdf
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: reel
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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XC886C6FFI5VACFXUMA1 XC88X-DTE.pdf
XC886C6FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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XC8866FFI5VACFXUMA1 XC88X-DTE.pdf
XC8866FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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XC8868FFI5VACFXUMA1 XC88X-DTE.pdf
XC8868FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886C6FFI3V3ACFXUMA1 XC88X-DTE.pdf
XC886C6FFI3V3ACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886C8FFI5VACFXUMA1 XC88X-DTE.pdf
XC886C8FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886LM6FFI5VACFXUMA1 XC88X-DTE.pdf
XC886LM6FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886LM8FFI5VACFXUMA1 XC88X-DTE.pdf
XC886LM8FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 FF200R12KE3.pdf
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+168.85 EUR
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FF200R17KE4HOSA1 FF200R17KE4.pdf
FF200R17KE4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+235.79 EUR
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IPP90R340C3XKSA2 Infineon-IPP90R340C3-DS-v01_01-en.pdf?fileId=db3a30432313ff5e0123a8a4f73e5c14
IPP90R340C3XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO220-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.7 EUR
17+4.23 EUR
Mindestbestellmenge: 16
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IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: D2PAK; TO263
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 94nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1.pdf
BAT6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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BSP171PL6327 BSP171PL6327-Infineon.pdf
BSP171PL6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ105N04NSGATMA1 BSZ105N04NSG.pdf
BSZ105N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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S25FL512SAGBHMC10
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FL01GSAGBHMC10 Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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TD92N16KOFHPSA2 TD92N16KOF.pdf
TD92N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw
Case: BG-PB20-1
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 120mA
Max. forward impulse current: 2.05kA
Max. forward voltage: 1.62V
Max. off-state voltage: 1.6kV
Load current: 92A
Max. load current: 160A
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+227.8 EUR
3+194.34 EUR
5+153.15 EUR
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BCR141E6327 BCR141.pdf
BCR141E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
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IRGB4620DPBF IRGB4620DPBF.pdf
IRGB4620DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 140W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IGCM04G60HAXKMA1 IGCM04G60HA.pdf
IGCM04G60HAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.54 EUR
9+8.09 EUR
10+7.16 EUR
14+6.79 EUR
Mindestbestellmenge: 8
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CY7C1062G30-10BGXI Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: PBGA119
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx32bit
Memory: 16Mb SRAM
Produkt ist nicht verfügbar
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CY7C1062G30-10BGXIT Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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IPW60R040C7XKSA1 IPW60R040C7-DTE.pdf
IPW60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TT400N26KOF TT400N26KOF.pdf
TT400N26KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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S25FS256TDPBHI113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; QPI,Quad I/O,SPI; FBGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: FBGA24
Operating temperature: -40...85°C
Kind of memory: NOR
Interface: QPI; Quad I/O; SPI
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+6.66 EUR
Mindestbestellmenge: 2500
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IRF1010NSTRLPBF irf1010nspbf.pdf
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Gate charge: 0.12µC
On-state resistance: 11mΩ
Power dissipation: 180W
Gate-source voltage: ±20V
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
52+1.38 EUR
100+1.09 EUR
200+1.02 EUR
250+1 EUR
Mindestbestellmenge: 34
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AUIRF1010ZSTRL auirf1010z.pdf
AUIRF1010ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH20G120C5XKSA1 IDH20G120C5-DTE.pdf
IDH20G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Max. forward voltage: 1.5V
Power dissipation: 330W
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.07 EUR
Mindestbestellmenge: 9
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