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IDH20G65C6XKSA1 IDH20G65C6XKSA1 INFINEON TECHNOLOGIES IDH20G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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IDH20G65C5 IDH20G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 119A
Leakage current: 4.1µA
Power dissipation: 157W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
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IRLHS6242TRPBF IRLHS6242TRPBF INFINEON TECHNOLOGIES irlhs6242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRF7343QTR AUIRF7343QTR INFINEON TECHNOLOGIES auirf7343q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DZ600N12K DZ600N12K INFINEON TECHNOLOGIES DZ600N18K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Max. load current: 600A
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.2kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+395.14 EUR
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BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
253+0.28 EUR
305+0.23 EUR
Mindestbestellmenge: 179
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CY7C1480BV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 167MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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CY7C1480BV33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Case: FBGA165
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Turn-off time: 176ns
Type of transistor: IGBT
Power dissipation: 123W
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Technology: Trench
Gate charge: 77nC
Turn-on time: 35ns
auf Bestellung 5 Stücke:
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5+14.3 EUR
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Power dissipation: 250W
Collector current: 48A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IPD33CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE42712AKSA1 INFINEON TECHNOLOGIES TLE4271-2.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO220-7; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO220-7
Mounting: THT
Kind of package: tube
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
Produkt ist nicht verfügbar
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES TLE4271-2G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.8 EUR
34+2.12 EUR
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S26HL01GTFPBHB030 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES irfl4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Case: SOT223
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 3.7A
Drain-source voltage: 55V
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
107+0.67 EUR
140+0.51 EUR
156+0.46 EUR
200+0.41 EUR
500+0.38 EUR
Mindestbestellmenge: 68
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BBY5303WE6327HTSA1 BBY5303WE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BBY53SERIES-DS-v01_01-en.pdf Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 6V
Kind of package: reel; tape
Case: SOD323
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
264+0.27 EUR
280+0.26 EUR
341+0.21 EUR
368+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 209
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BB535E7904HTSA1 BB535E7904HTSA1 INFINEON TECHNOLOGIES BB535-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 2...20pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SOD323
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES BBY55_SER.pdf Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Case: SC79
Features of semiconductor devices: RF
Type of diode: varicap
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 5.5...19.6pF
Leakage current: 0.1µA
Kind of package: reel; tape
Load current: 20mA
Max. off-state voltage: 16V
auf Bestellung 1933 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
266+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 228
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DD340N16SHPSA1 INFINEON TECHNOLOGIES DD340N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Produkt ist nicht verfügbar
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DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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DD340N18S INFINEON TECHNOLOGIES DD340N18S.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Produkt ist nicht verfügbar
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DD340N22SHPSA1 INFINEON TECHNOLOGIES DD340N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward voltage: 1.31V
Case: BG-PB50SB-1
Mechanical mounting: screw
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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AIDW16S65C5XKSA1 INFINEON TECHNOLOGIES Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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BCW61AE6327HTSA1 INFINEON TECHNOLOGIES bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 100mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 120
Mounting: SMD
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
12000+0.049 EUR
Mindestbestellmenge: 12000
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IRF7380TRPBF IRF7380TRPBF INFINEON TECHNOLOGIES irf7380pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC030N04NSGATMA1 BSC030N04NSGATMA1 INFINEON TECHNOLOGIES BSC030N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
122+0.59 EUR
129+0.56 EUR
143+0.5 EUR
177+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 114
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IPD60R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 9.3A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Power dissipation: 112W
Drain-source voltage: 600V
Technology: CoolMOS™ CE
Case: PG-TO252
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R045CPFKSA1 IPW60R045CPFKSA1 INFINEON TECHNOLOGIES IPW60R045CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™ CP
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
4+23.38 EUR
Mindestbestellmenge: 4
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IPA057N06N3GXKSA1 IPA057N06N3GXKSA1 INFINEON TECHNOLOGIES IPA057N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 37 Stücke:
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22+3.27 EUR
29+2.49 EUR
Mindestbestellmenge: 22
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IPA057N08N3GXKSA1 IPA057N08N3GXKSA1 INFINEON TECHNOLOGIES IPA057N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.97 EUR
29+2.55 EUR
50+1.66 EUR
Mindestbestellmenge: 25
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES SPD09P06PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
64+1.13 EUR
73+0.98 EUR
108+0.67 EUR
112+0.64 EUR
Mindestbestellmenge: 53
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES IPD025N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1512 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES SPD18P06PGBTMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
59+1.22 EUR
65+1.12 EUR
72+1 EUR
80+0.9 EUR
Mindestbestellmenge: 42
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES SPD15P10PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
42+1.73 EUR
49+1.47 EUR
100+1.33 EUR
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IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 INFINEON TECHNOLOGIES IPD70R1K4P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
149+0.48 EUR
184+0.39 EUR
191+0.38 EUR
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
77+0.94 EUR
82+0.87 EUR
90+0.8 EUR
109+0.66 EUR
114+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 53
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IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES IPD031N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
32+2.29 EUR
35+2.07 EUR
50+1.73 EUR
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IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES IPD031N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
99+0.72 EUR
106+0.68 EUR
109+0.66 EUR
Mindestbestellmenge: 90
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES IPD082N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
40+1.83 EUR
44+1.63 EUR
58+1.24 EUR
100+1.12 EUR
250+1 EUR
500+0.9 EUR
1000+0.86 EUR
Mindestbestellmenge: 32
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IPD60R280P7ATMA1 IPD60R280P7ATMA1 INFINEON TECHNOLOGIES IPD60R280P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
50+1.43 EUR
54+1.33 EUR
Mindestbestellmenge: 31
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Version: ESD
Gate charge: 35nC
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
31+2.32 EUR
35+2.04 EUR
36+1.99 EUR
Mindestbestellmenge: 25
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
112+0.64 EUR
147+0.49 EUR
160+0.45 EUR
Mindestbestellmenge: 88
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IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES IPD12CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1504 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
37+1.97 EUR
46+1.57 EUR
52+1.4 EUR
60+1.2 EUR
100+1.16 EUR
Mindestbestellmenge: 35
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IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 16A
Gate charge: 9nC
auf Bestellung 2153 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
93+0.77 EUR
136+0.53 EUR
160+0.45 EUR
500+0.42 EUR
Mindestbestellmenge: 67
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IPD80R1K0CEATMA1 IPD80R1K0CEATMA1 INFINEON TECHNOLOGIES Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
111+0.65 EUR
148+0.48 EUR
Mindestbestellmenge: 81
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IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
165+0.43 EUR
178+0.4 EUR
195+0.37 EUR
210+0.34 EUR
218+0.33 EUR
Mindestbestellmenge: 148
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IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 120
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 11nC
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
57+1.28 EUR
64+1.13 EUR
91+0.79 EUR
105+0.68 EUR
250+0.59 EUR
Mindestbestellmenge: 48
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 INFINEON TECHNOLOGIES IPDD60R125G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 54A
Gate charge: 27nC
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.08 EUR
19+3.83 EUR
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 INFINEON TECHNOLOGIES IPD80R2K0P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 9nC
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
94+0.76 EUR
114+0.63 EUR
Mindestbestellmenge: 56
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IRFS4410ZTRLPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 69A
Power dissipation: 230W
Drain-source voltage: 100V
Pulsed drain current: 390A
Type of transistor: N-MOSFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: D2PAK
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Technology: CoolSiC™ 5G; SiC
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 8.2µA
Max. forward voltage: 1.8V
Power dissipation: 112W
Load current: 40A
Max. forward impulse current: 153A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES IDW40G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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BSV236SPH6327XTSA1 BSV236SPH6327XTSA1 INFINEON TECHNOLOGIES BSV236SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.175Ω
Power dissipation: 0.56W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DDB6U50N16W1RBPSA1 INFINEON TECHNOLOGIES DDB6U50N16W1R.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.6kV
Case: AG-EASY1B
Topology: boost chopper; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DDB6U134N16RRBPSA1 INFINEON TECHNOLOGIES DDB6U134N16RR.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 70A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 INFINEON TECHNOLOGIES DDB6U104N16RR.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoBRIDGE™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Max. off-state voltage: 1.6kV
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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TDB6HK180N16RRBPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305 Category: IGBT modules
Description: Module: IGBT; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Produkt ist nicht verfügbar
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TDB6HK180N16RRB11BPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR_B11-DS-v08_00-en_de.pdf?fileId=db3a3043156fd57301161f6857321f16 Category: IGBT modules
Description: Module: IGBT; AG-ECONO2B; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Case: AG-ECONO2B
Produkt ist nicht verfügbar
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IDH20G65C6XKSA1 IDH20G65C6.pdf
IDH20G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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IDH20G65C5
IDH20G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 119A
Leakage current: 4.1µA
Power dissipation: 157W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
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IRLHS6242TRPBF irlhs6242pbf.pdf
IRLHS6242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRF7343QTR auirf7343q.pdf
AUIRF7343QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DZ600N12K DZ600N18K.pdf
DZ600N12K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Max. load current: 600A
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.2kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+395.14 EUR
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BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
253+0.28 EUR
305+0.23 EUR
Mindestbestellmenge: 179
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CY7C1480BV33-167AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 167MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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CY7C1480BV33-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Case: FBGA165
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Turn-off time: 176ns
Type of transistor: IGBT
Power dissipation: 123W
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Technology: Trench
Gate charge: 77nC
Turn-on time: 35ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Power dissipation: 250W
Collector current: 48A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE4271-2.pdf
TLE42712AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO220-7; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO220-7
Mounting: THT
Kind of package: tube
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
Produkt ist nicht verfügbar
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TLE42712GATMA1 TLE4271-2G.pdf
TLE42712GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
34+2.12 EUR
Mindestbestellmenge: 26
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S26HL01GTFPBHB030
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IRFL4105TRPBF irfl4105pbf.pdf
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Case: SOT223
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 3.7A
Drain-source voltage: 55V
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
107+0.67 EUR
140+0.51 EUR
156+0.46 EUR
200+0.41 EUR
500+0.38 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BBY5303WE6327HTSA1 Infineon-BBY53SERIES-DS-v01_01-en.pdf
BBY5303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 6V
Kind of package: reel; tape
Case: SOD323
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
264+0.27 EUR
280+0.26 EUR
341+0.21 EUR
368+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 209
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BB535E7904HTSA1 BB535-DTE.pdf
BB535E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 2...20pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SOD323
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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BBY5502VH6327XTSA1 BBY55_SER.pdf
BBY5502VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Case: SC79
Features of semiconductor devices: RF
Type of diode: varicap
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 5.5...19.6pF
Leakage current: 0.1µA
Kind of package: reel; tape
Load current: 20mA
Max. off-state voltage: 16V
auf Bestellung 1933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
266+0.27 EUR
277+0.26 EUR
Mindestbestellmenge: 228
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DD340N16SHPSA1 DD340N16S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Produkt ist nicht verfügbar
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DD340N20SHPSA1 DD340N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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DD340N18S DD340N18S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Produkt ist nicht verfügbar
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DD340N22SHPSA1 DD340N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward voltage: 1.31V
Case: BG-PB50SB-1
Mechanical mounting: screw
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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AIDW16S65C5XKSA1 Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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BCW61AE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 100mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 120
Mounting: SMD
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12000+0.049 EUR
Mindestbestellmenge: 12000
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IRF7380TRPBF irf7380pbf.pdf
IRF7380TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC030N04NSGATMA1 BSC030N04NSG-DTE.pdf
BSC030N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
122+0.59 EUR
129+0.56 EUR
143+0.5 EUR
177+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 114
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IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 9.3A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Power dissipation: 112W
Drain-source voltage: 600V
Technology: CoolMOS™ CE
Case: PG-TO252
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R045CPFKSA1 IPW60R045CP-DTE.pdf
IPW60R045CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™ CP
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.38 EUR
Mindestbestellmenge: 4
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IPA057N06N3GXKSA1 IPA057N06N3G-DTE.pdf
IPA057N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
29+2.49 EUR
Mindestbestellmenge: 22
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IPA057N08N3GXKSA1 IPA057N08N3G-DTE.pdf
IPA057N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
29+2.55 EUR
50+1.66 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
SPD09P06PLGBTMA1 SPD09P06PLGBTMA1-DTE.pdf
SPD09P06PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
64+1.13 EUR
73+0.98 EUR
108+0.67 EUR
112+0.64 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IPD025N06NATMA1 IPD025N06N-DTE.pdf
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1512 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
SPD18P06PGBTMA1 SPD18P06PGBTMA1-DTE.PDF
SPD18P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
59+1.22 EUR
65+1.12 EUR
72+1 EUR
80+0.9 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
SPD15P10PLGBTMA1 SPD15P10PLGBTMA1-DTE.pdf
SPD15P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
42+1.73 EUR
49+1.47 EUR
100+1.33 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R1K4P7SAUMA1 IPD70R1K4P7S.pdf
IPD70R1K4P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
149+0.48 EUR
184+0.39 EUR
191+0.38 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 IPD80R1K4P7.pdf
IPD80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
77+0.94 EUR
82+0.87 EUR
90+0.8 EUR
109+0.66 EUR
114+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 53
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IPD031N06L3GATMA1 IPD031N06L3G-DTE.pdf
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
32+2.29 EUR
35+2.07 EUR
50+1.73 EUR
Mindestbestellmenge: 26
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IPD031N03LGATMA1 IPD031N03LG-DTE.pdf
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
99+0.72 EUR
106+0.68 EUR
109+0.66 EUR
Mindestbestellmenge: 90
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IPD082N10N3GATMA1 IPD082N10N3G-DTE.pdf
IPD082N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
40+1.83 EUR
44+1.63 EUR
58+1.24 EUR
100+1.12 EUR
250+1 EUR
500+0.9 EUR
1000+0.86 EUR
Mindestbestellmenge: 32
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IPD60R280P7ATMA1 IPD60R280P7.pdf
IPD60R280P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
50+1.43 EUR
54+1.33 EUR
Mindestbestellmenge: 31
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IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Version: ESD
Gate charge: 35nC
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
31+2.32 EUR
35+2.04 EUR
36+1.99 EUR
Mindestbestellmenge: 25
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IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
112+0.64 EUR
147+0.49 EUR
160+0.45 EUR
Mindestbestellmenge: 88
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IPD12CN10NGATMA1 IPD12CN10NG-DTE.pdf
IPD12CN10NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
37+1.97 EUR
46+1.57 EUR
52+1.4 EUR
60+1.2 EUR
100+1.16 EUR
Mindestbestellmenge: 35
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IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 16A
Gate charge: 9nC
auf Bestellung 2153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
93+0.77 EUR
136+0.53 EUR
160+0.45 EUR
500+0.42 EUR
Mindestbestellmenge: 67
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IPD80R1K0CEATMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPD80R1K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
111+0.65 EUR
148+0.48 EUR
Mindestbestellmenge: 81
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IPD075N03LGATMA1 IPD075N03LG-DTE.pdf
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
165+0.43 EUR
178+0.4 EUR
195+0.37 EUR
210+0.34 EUR
218+0.33 EUR
Mindestbestellmenge: 148
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IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 120
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IPD80R1K2P7ATMA1 IPD80R1K2P7.pdf
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 11nC
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
57+1.28 EUR
64+1.13 EUR
91+0.79 EUR
105+0.68 EUR
250+0.59 EUR
Mindestbestellmenge: 48
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IPDD60R125G7XTMA1 IPDD60R125G7.pdf
IPDD60R125G7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 54A
Gate charge: 27nC
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
19+3.83 EUR
Mindestbestellmenge: 18
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IPD80R2K0P7ATMA1 IPD80R2K0P7.pdf
IPD80R2K0P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 9nC
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
94+0.76 EUR
114+0.63 EUR
Mindestbestellmenge: 56
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IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 69A
Power dissipation: 230W
Drain-source voltage: 100V
Pulsed drain current: 390A
Type of transistor: N-MOSFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: D2PAK
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Technology: CoolSiC™ 5G; SiC
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 8.2µA
Max. forward voltage: 1.8V
Power dissipation: 112W
Load current: 40A
Max. forward impulse current: 153A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA2 IDW40G65C5B.pdf
IDW40G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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BSV236SPH6327XTSA1 BSV236SPH6327XTSA1-dte.pdf
BSV236SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.175Ω
Power dissipation: 0.56W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DDB6U50N16W1RBPSA1 DDB6U50N16W1R.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.6kV
Case: AG-EASY1B
Topology: boost chopper; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DDB6U134N16RRBPSA1 DDB6U134N16RR.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 70A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 DDB6U104N16RR.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoBRIDGE™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Max. off-state voltage: 1.6kV
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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TDB6HK180N16RRBPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Produkt ist nicht verfügbar
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TDB6HK180N16RRB11BPSA1 Infineon-TDB6HK180N16RR_B11-DS-v08_00-en_de.pdf?fileId=db3a3043156fd57301161f6857321f16
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; AG-ECONO2B; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Case: AG-ECONO2B
Produkt ist nicht verfügbar
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