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IRF7311TRPBF IRF7311TRPBF INFINEON TECHNOLOGIES irf7311pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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S29GL128P10TFI010 S29GL128P10TFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP56
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Kind of interface: parallel
Memory: 128Mb FLASH
Interface: CFI; parallel
auf Bestellung 874 Stücke:
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IPF014N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF014N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f02fcd184682 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 282A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 282A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
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IPB014N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 188W
Case: D2PAK; TO263
On-state resistance: 1.03mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
Technology: SiC
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES BSB014N04LX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N03LSGATMA1 BSC014N03LSGATMA1 INFINEON TECHNOLOGIES BSC014N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES BSC014N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSC014N04LSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 3W; TDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 3W
Case: TDFN8
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 85nC
Produkt ist nicht verfügbar
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 INFINEON TECHNOLOGIES BSC014NE2LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSZ014NE2LS5IFATMA1 INFINEON TECHNOLOGIES BSZ014NE2LS5IF-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES IRFR3710ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1318 Stücke:
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33+2.19 EUR
40+1.82 EUR
45+1.61 EUR
54+1.34 EUR
62+1.16 EUR
100+1.02 EUR
250+0.88 EUR
500+0.8 EUR
1000+0.74 EUR
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 INFINEON TECHNOLOGIES BFR182WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.25W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT323
auf Bestellung 3000 Stücke:
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307+0.23 EUR
353+0.2 EUR
391+0.18 EUR
435+0.16 EUR
486+0.15 EUR
1000+0.14 EUR
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AUIRF3710ZS AUIRF3710ZS INFINEON TECHNOLOGIES auirf3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 82nC
On-state resistance: 18mΩ
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IRF7855TRPBF IRF7855TRPBF INFINEON TECHNOLOGIES irf7855pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFP196E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
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BFP196WNH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
Produkt ist nicht verfügbar
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BB639E7904HTSA1 BB639E7904HTSA1 INFINEON TECHNOLOGIES BB639_659.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Produkt ist nicht verfügbar
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BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES BFP193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
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ICL8800XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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ICL8810XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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ICL8820XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
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IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRL1004PBF IRL1004PBF INFINEON TECHNOLOGIES irl1004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 30 Stücke:
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30+2.39 EUR
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IRFU024NPBF IRFU024NPBF INFINEON TECHNOLOGIES irfr024n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IKFW60N65ES5XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06 Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Turn-on switching energy: 1.23mJ
Gate-emitter voltage: ±20V
Power dissipation: 138W
Collector current: 77A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Technology: Field Stop; Trench
Gate charge: 0.12µC
Produkt ist nicht verfügbar
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IKW75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
240+6.45 EUR
Mindestbestellmenge: 240
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IKZA75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-4
Mounting: THT
Gate charge: 168nC
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
240+7.05 EUR
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CY4500 CY4500 INFINEON TECHNOLOGIES Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
Type of development kit: Cypress
Produkt ist nicht verfügbar
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CY4533 CY4533 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Connection: USB C socket
Kind of module: evaluation board
Type of development kit: Cypress
Produkt ist nicht verfügbar
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CY3280-MBR3 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Connection: USB
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
Application - series/manufacturer: Arduino
Type of development kit: Cypress
Produkt ist nicht verfügbar
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CY8CPROTO-062-4343W INFINEON TECHNOLOGIES Infineon-CY8CPROTO-062-4343W_PSoC_6_Wi-Fi_BT_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0118571844&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Connection: microSD; USB
Kind of module: Bluetooth; prototype board; WiFi
Type of development kit: Cypress
Produkt ist nicht verfügbar
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2EDL05N06PJXUMA1 INFINEON TECHNOLOGIES 2EDL05x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Technology: EiceDRIVER™
Supply voltage: 10...20V
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Voltage class: 600V
Produkt ist nicht verfügbar
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2122 Stücke:
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48+1.52 EUR
60+1.21 EUR
69+1.04 EUR
86+0.84 EUR
101+0.71 EUR
117+0.61 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.42 EUR
Mindestbestellmenge: 48
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EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Type of development kit: evaluation
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Connection: screw terminal x2
Kit contents: prototype board
Application: motors
Kind of module: motor driver
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+69.78 EUR
Mindestbestellmenge: 2
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EVAL-IMM101T-046TOBO1 (SP004177752)
+2
 		EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kind of module: motor driver
Kit contents: prototype board
Connection: screw terminal x2
Components: IMM101T-046M
Application: motors
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Produkt ist nicht verfügbar
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BAT6406E6327HTSA1 BAT6406E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 6879 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
582+0.12 EUR
625+0.11 EUR
798+0.09 EUR
915+0.078 EUR
983+0.073 EUR
1044+0.068 EUR
1092+0.065 EUR
3000+0.059 EUR
Mindestbestellmenge: 417
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES IRF250P224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
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IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -200A
Gate charge: 14nC
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
Mindestbestellmenge: 42
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IPD50P04P413ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 58W
Case: DPAK; TO252
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPD50P04P413ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhancement
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IR2213SPBF IR2213SPBF INFINEON TECHNOLOGIES IR2213PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Produkt ist nicht verfügbar
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q048X0128AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q048X0200AAXUMA1 XMC1403Q048X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q064X0064AAXUMA1 XMC1403Q064X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q064X0128AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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S25FS512SDSNFB010 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Application: automotive
Case: WSON8
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FS512SDSNFI013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FS512SDSNFV011 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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IRFHS8242TRPBF IRFHS8242TRPBF INFINEON TECHNOLOGIES irfhs8242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFHS8342TRPBF IRFHS8342TRPBF INFINEON TECHNOLOGIES irfhs8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES AUIRGP35B60PD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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AUIRF7316QTR AUIRF7316QTR INFINEON TECHNOLOGIES auirf7316q.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES TD330N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
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TT330N16KOF TT330N16KOF INFINEON TECHNOLOGIES TT330N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES IPP60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R190E6XKSA1 IPA60R190E6XKSA1 INFINEON TECHNOLOGIES IPA60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 INFINEON TECHNOLOGIES IPA60R180P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Produkt ist nicht verfügbar
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IPA60R180P7XKSA1 IPA60R180P7XKSA1 INFINEON TECHNOLOGIES IPA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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IRF7311TRPBF irf7311pbf.pdf
IRF7311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29GL128P10TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P10TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: TSOP56
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Kind of interface: parallel
Memory: 128Mb FLASH
Interface: CFI; parallel
auf Bestellung 874 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.78 EUR
Mindestbestellmenge: 8
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IPF014N08NF2SATMA1 Infineon-IPF014N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f02fcd184682
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 282A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 282A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Power dissipation: 188W
Case: D2PAK; TO263
On-state resistance: 1.03mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3G-DTE.pdf
BSB014N04LX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N03LSGATMA1 BSC014N03LSG-DTE.pdf
BSC014N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 BSC014N04LS-DTE.pdf
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 3W; TDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 3W
Case: TDFN8
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 85nC
Produkt ist nicht verfügbar
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BSC014NE2LSIATMA1 BSC014NE2LSI-DTE.pdf
BSC014NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSZ014NE2LS5IFATMA1 BSZ014NE2LS5IF-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRFR3710ZTRPBF IRFR3710ZTRPBF.pdf
IRFR3710ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
40+1.82 EUR
45+1.61 EUR
54+1.34 EUR
62+1.16 EUR
100+1.02 EUR
250+0.88 EUR
500+0.8 EUR
1000+0.74 EUR
Mindestbestellmenge: 33
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BFR182WH6327XTSA1 BFR182WH6327.pdf
BFR182WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.25W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT323
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
307+0.23 EUR
353+0.2 EUR
391+0.18 EUR
435+0.16 EUR
486+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 228
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AUIRF3710ZS auirf3710z.pdf
AUIRF3710ZS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 82nC
On-state resistance: 18mΩ
Produkt ist nicht verfügbar
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IRF7855TRPBF irf7855pbf.pdf
IRF7855TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BFP196WNH6327XTSA1 Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
Produkt ist nicht verfügbar
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BB639E7904HTSA1 BB639_659.pdf
BB639E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Produkt ist nicht verfügbar
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BFP193WH6327 BFP193WH6327-dte.pdf
BFP193WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
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ICL8800XUMA1 ICL88xx.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
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ICL8810XUMA1 ICL88xx.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
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ICL8820XUMA1 ICL88xx.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
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IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRL1004PBF irl1004pbf.pdf
IRL1004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
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IRFU024NPBF irfr024n.pdf
IRFU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IKFW60N65ES5XKSA1 Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Turn-on switching energy: 1.23mJ
Gate-emitter voltage: ±20V
Power dissipation: 138W
Collector current: 77A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Technology: Field Stop; Trench
Gate charge: 0.12µC
Produkt ist nicht verfügbar
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IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+6.45 EUR
Mindestbestellmenge: 240
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IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-4
Mounting: THT
Gate charge: 168nC
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+7.05 EUR
Mindestbestellmenge: 240
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CY4500 Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4500
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
Type of development kit: Cypress
Produkt ist nicht verfügbar
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CY4533 download
CY4533
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Connection: USB C socket
Kind of module: evaluation board
Type of development kit: Cypress
Produkt ist nicht verfügbar
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CY3280-MBR3 download
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Connection: USB
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
Application - series/manufacturer: Arduino
Type of development kit: Cypress
Produkt ist nicht verfügbar
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CY8CPROTO-062-4343W Infineon-CY8CPROTO-062-4343W_PSoC_6_Wi-Fi_BT_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0118571844&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Connection: microSD; USB
Kind of module: Bluetooth; prototype board; WiFi
Type of development kit: Cypress
Produkt ist nicht verfügbar
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2EDL05N06PJXUMA1 2EDL05x06xx.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Technology: EiceDRIVER™
Supply voltage: 10...20V
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Voltage class: 600V
Produkt ist nicht verfügbar
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IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
60+1.21 EUR
69+1.04 EUR
86+0.84 EUR
101+0.71 EUR
117+0.61 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.42 EUR
Mindestbestellmenge: 48
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EVAL-IMM101T-015TOBO1 (SP004177748) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Type of development kit: evaluation
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Connection: screw terminal x2
Kit contents: prototype board
Application: motors
Kind of module: motor driver
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+69.78 EUR
Mindestbestellmenge: 2
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EVAL-IMM101T-046TOBO1 (SP004177752) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-046TOBO1 (SP004177752)
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kind of module: motor driver
Kit contents: prototype board
Connection: screw terminal x2
Components: IMM101T-046M
Application: motors
Interface: GPIO; I2C; PWM; UART
Type of development kit: evaluation
Produkt ist nicht verfügbar
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BAT6406E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6406E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 6879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
582+0.12 EUR
625+0.11 EUR
798+0.09 EUR
915+0.078 EUR
983+0.073 EUR
1044+0.068 EUR
1092+0.065 EUR
3000+0.059 EUR
Mindestbestellmenge: 417
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IRF250P224 IRF250P224.pdf
IRF250P224
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50P04P4L11ATMA2 Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58
IPD50P04P4L11ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -200A
Gate charge: 14nC
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
Mindestbestellmenge: 42
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IPD50P04P413ATMA2 Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 58W
Case: DPAK; TO252
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2213SPBF IR2213PBF.pdf
IR2213SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Produkt ist nicht verfügbar
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XMC1403Q048X0064AAXUMA1 XMC1400-DTE.pdf
XMC1403Q048X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q048X0128AAXUMA1 XMC1400-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q048X0200AAXUMA1 XMC1400-DTE.pdf
XMC1403Q048X0200AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q064X0064AAXUMA1 XMC1400-DTE.pdf
XMC1403Q064X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q064X0128AAXUMA1 XMC1400-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 XMC1400-DTE.pdf
XMC1403Q064X0200AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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S25FS512SDSNFB010 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Application: automotive
Case: WSON8
Type of integrated circuit: FLASH memory
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S25FS512SDSNFI013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
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S25FS512SDSNFV011
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
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IRFHS8242TRPBF irfhs8242pbf.pdf
IRFHS8242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
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IRFHS8342TRPBF irfhs8342pbf.pdf
IRFHS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
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AUIRGP35B60PD AUIRGP35B60PD.pdf
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
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AUIRF7316QTR auirf7316q.pdf
AUIRF7316QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
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TD330N16KOFHPSA2 TD330N16KOF.pdf
TD330N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
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TT330N16KOF TT330N16KOF.pdf
TT330N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPP60R060P7 IPP60R060P7.pdf
IPP60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R190E6XKSA1 IPA60R190E6-DTE.pdf
IPA60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R180P7SXKSA1 IPA60R180P7S.pdf
IPA60R180P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
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IPA60R180P7XKSA1 IPA60R180P7.pdf
IPA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
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