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BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 INFINEON TECHNOLOGIES BSS209PW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
On-state resistance: 0.55Ω
Gate-source voltage: ±12V
Polarisation: unipolar
Case: PG-SOT-323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
329+0.22 EUR
354+0.2 EUR
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BSP171PH6327XTSA1 BSP171PH6327XTSA1 INFINEON TECHNOLOGIES BSP171PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
91+0.79 EUR
137+0.52 EUR
200+0.47 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 INFINEON TECHNOLOGIES BSS816NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
296+0.24 EUR
430+0.17 EUR
509+0.14 EUR
738+0.097 EUR
1000+0.084 EUR
Mindestbestellmenge: 209 Stücke
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BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: double series
Case: SOT323
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 INFINEON TECHNOLOGIES BSS223PWH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Mounting: SMD
Case: PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
388+0.18 EUR
561+0.13 EUR
659+0.11 EUR
807+0.089 EUR
935+0.077 EUR
1053+0.068 EUR
Mindestbestellmenge: 264 Stücke
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IRFB7446PBF IRFB7446PBF INFINEON TECHNOLOGIES IRFB7446PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
70+1.03 EUR
88+0.82 EUR
100+0.74 EUR
Mindestbestellmenge: 42 Stücke
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IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES irf7832pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3388 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
64+1.13 EUR
100+0.77 EUR
250+0.69 EUR
Mindestbestellmenge: 44 Stücke
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BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES BSP135H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1612 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
62+1.16 EUR
79+0.91 EUR
100+0.82 EUR
200+0.74 EUR
500+0.65 EUR
1000+0.59 EUR
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES irs2101pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
Part status: Not recommended for new designs
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
71+1.02 EUR
84+0.86 EUR
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Case: SOT323
auf Bestellung 618 Stücke:
Lieferzeit 14-21 Tag (e)
618+0.12 EUR
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BAT6405WH6327XTSA1 BAT6405WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Case: SOT323
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
463+0.15 EUR
511+0.14 EUR
705+0.1 EUR
834+0.086 EUR
1000+0.08 EUR
Mindestbestellmenge: 358 Stücke
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BTS6143D BTS6143D INFINEON TECHNOLOGIES BTS6143D.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2378 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
28+2.57 EUR
30+2.43 EUR
50+2.32 EUR
100+2.2 EUR
250+2.06 EUR
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES FF45MR12W1M1B11.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Technology: CoolSiC™; SiC
Drain current: 25A
Pulsed drain current: 50A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+74.82 EUR
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IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES irs2104.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
44+1.63 EUR
50+1.43 EUR
95+1.3 EUR
Mindestbestellmenge: 42 Stücke
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BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES BSS84P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 5776 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
365+0.2 EUR
539+0.13 EUR
640+0.11 EUR
913+0.078 EUR
1051+0.068 EUR
3000+0.056 EUR
Mindestbestellmenge: 264 Stücke
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BAT6404WH6327XTSA1 BAT6404WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: double series
Case: SOT323
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
325+0.22 EUR
454+0.16 EUR
521+0.14 EUR
694+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 239 Stücke
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BAT6406WH6327XTSA1 BAT6406WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Case: SOT323
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
848+0.084 EUR
Mindestbestellmenge: 264 Stücke
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IR11672ASTRPBF IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Voltage class: 200V
Type of integrated circuit: driver
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 34 Stücke
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BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: double series
Case: SOT323
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
235+0.3 EUR
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IRS2184STRPBF IRS2184STRPBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 2228 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 39 Stücke
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES TT210N12KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 56 Stücke
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES BCR400W.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Mounting: SMD
Output current: 10mA
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Case: SOT343
Type of integrated circuit: driver
auf Bestellung 2866 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
447+0.16 EUR
491+0.15 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 313 Stücke
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IRS21844STRPBF IRS21844STRPBF INFINEON TECHNOLOGIES infineon-irs2186-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 2319 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
38+1.92 EUR
41+1.74 EUR
45+1.62 EUR
Mindestbestellmenge: 32 Stücke
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TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES TLD1120EL.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
91+0.79 EUR
102+0.71 EUR
103+0.7 EUR
Mindestbestellmenge: 76 Stücke
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BTS724G BTS724G INFINEON TECHNOLOGIES BTS724G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.72 EUR
Mindestbestellmenge: 10 Stücke
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES ITS4141N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: SOT223
Kind of package: reel; tape
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Output current: 0.7A
Number of channels: 1
Power dissipation: 1.4W
Supply voltage: 12...45V DC
auf Bestellung 2526 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
49+1.47 EUR
54+1.34 EUR
55+1.3 EUR
100+1.24 EUR
250+1.22 EUR
Mindestbestellmenge: 36 Stücke
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT343
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Case: SOT323
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443+0.16 EUR
655+0.11 EUR
855+0.084 EUR
1000+0.075 EUR
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ITS5215L ITS5215L INFINEON TECHNOLOGIES ITS5215L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
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25+2.89 EUR
28+2.6 EUR
33+2.19 EUR
35+2.06 EUR
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES IKD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Collector current: 4A
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IRFP4468PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4668PBFXKMA1 IRFP4668PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfp4668-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7103TRPBFXTMA1 IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3807 Stücke:
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59+1.22 EUR
93+0.77 EUR
143+0.5 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
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IRF7341GTRPBF IRF7341GTRPBF INFINEON TECHNOLOGIES irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7341TRPBFXTMA1 IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1492 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
83+0.87 EUR
126+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
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IRFR6215TRLPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
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16+4.48 EUR
25+2.95 EUR
28+2.56 EUR
100+2.12 EUR
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IRFP3077PBFXKMA1 IRFP3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
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22+3.33 EUR
24+2.99 EUR
28+2.65 EUR
30+2.46 EUR
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IRS2153DSTRPBF INFINEON TECHNOLOGIES irs2153d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1037 Stücke:
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32+2.29 EUR
42+1.73 EUR
49+1.47 EUR
55+1.3 EUR
100+1.16 EUR
200+1.04 EUR
500+0.9 EUR
1000+0.83 EUR
Mindestbestellmenge: 29 Stücke
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IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES IRFB7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 25 Stücke:
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21+3.53 EUR
23+3.16 EUR
25+2.86 EUR
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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6+11.91 EUR
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1958 Stücke:
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65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65 Stücke
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES BSO211PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
auf Bestellung 2320 Stücke:
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173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1167 Stücke:
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25+2.96 EUR
34+2.12 EUR
40+1.79 EUR
43+1.67 EUR
50+1.53 EUR
100+1.43 EUR
500+1.2 EUR
1000+1.12 EUR
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BC817UE6327HTSA1 BC817UE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2352 Stücke:
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162+0.44 EUR
182+0.39 EUR
202+0.35 EUR
262+0.27 EUR
500+0.18 EUR
1000+0.15 EUR
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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ITS4140N ITS4140N INFINEON TECHNOLOGIES ITS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 92 Stücke:
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55+1.32 EUR
60+1.2 EUR
68+1.06 EUR
Mindestbestellmenge: 55 Stücke
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES BSS159NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: depletion
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
261+0.27 EUR
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BCR402WH6327XTSA1 BCR402WH6327XTSA1 INFINEON TECHNOLOGIES bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Case: SOT343
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
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228+0.31 EUR
285+0.25 EUR
325+0.22 EUR
388+0.18 EUR
459+0.16 EUR
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IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES irfb3006gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES ICL8001G-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.04 EUR
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.56 EUR
19+3.88 EUR
24+3.02 EUR
Mindestbestellmenge: 16 Stücke
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
Power: 1W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 120V
Power dissipation: 300W
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.63 EUR
18+4.05 EUR
50+2.72 EUR
100+2.43 EUR
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
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39+1.83 EUR
Mindestbestellmenge: 39 Stücke
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BSS209PWH6327XTSA1 BSS209PW.pdf
BSS209PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
On-state resistance: 0.55Ω
Gate-source voltage: ±12V
Polarisation: unipolar
Case: PG-SOT-323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
329+0.22 EUR
354+0.2 EUR
Mindestbestellmenge: 239 Stücke
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BSP171PH6327XTSA1 BSP171PH6327XTSA1-dte.pdf
BSP171PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
59+1.22 EUR
91+0.79 EUR
137+0.52 EUR
200+0.47 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 59 Stücke
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1.pdf
BSS816NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
209+0.34 EUR
296+0.24 EUR
430+0.17 EUR
509+0.14 EUR
738+0.097 EUR
1000+0.084 EUR
Mindestbestellmenge: 209 Stücke
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BAT1704WH6327XTSA1 BAT1704E6327HTSA1.pdf
BAT1704WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: double series
Case: SOT323
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
132+0.54 EUR
Mindestbestellmenge: 132 Stücke
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1-dte.pdf
BSS223PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Mounting: SMD
Case: PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
264+0.27 EUR
388+0.18 EUR
561+0.13 EUR
659+0.11 EUR
807+0.089 EUR
935+0.077 EUR
1053+0.068 EUR
Mindestbestellmenge: 264 Stücke
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IRFB7446PBF IRFB7446PBF.pdf
IRFB7446PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
42+1.73 EUR
70+1.03 EUR
88+0.82 EUR
100+0.74 EUR
Mindestbestellmenge: 42 Stücke
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IRF7832TRPBF description irf7832pbf.pdf
IRF7832TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3388 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
44+1.66 EUR
64+1.13 EUR
100+0.77 EUR
250+0.69 EUR
Mindestbestellmenge: 44 Stücke
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BSP135H6327XTSA1 BSP135H6327XTSA1.pdf
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1612 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
42+1.73 EUR
62+1.16 EUR
79+0.91 EUR
100+0.82 EUR
200+0.74 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 42 Stücke
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IRS2101SPBF description irs2101pbf.pdf
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
Part status: Not recommended for new designs
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
63+1.14 EUR
71+1.02 EUR
84+0.86 EUR
Mindestbestellmenge: 63 Stücke
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BAT1705WH6327XTSA1 BAT1704E6327HTSA1.pdf
BAT1705WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Case: SOT323
auf Bestellung 618 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
618+0.12 EUR
Mindestbestellmenge: 618 Stücke
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BAT6405WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Case: SOT323
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
358+0.2 EUR
463+0.15 EUR
511+0.14 EUR
705+0.1 EUR
834+0.086 EUR
1000+0.08 EUR
Mindestbestellmenge: 358 Stücke
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BTS6143D description BTS6143D.pdf
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2378 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+3.03 EUR
28+2.57 EUR
30+2.43 EUR
50+2.32 EUR
100+2.2 EUR
250+2.06 EUR
Mindestbestellmenge: 24 Stücke
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11.pdf
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Technology: CoolSiC™; SiC
Drain current: 25A
Pulsed drain current: 50A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1+74.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRS2104SPBF irs2104.pdf
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
42+1.73 EUR
44+1.63 EUR
50+1.43 EUR
95+1.3 EUR
Mindestbestellmenge: 42 Stücke
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BSS84PH6327XTSA2 BSS84P.pdf
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 5776 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
264+0.27 EUR
365+0.2 EUR
539+0.13 EUR
640+0.11 EUR
913+0.078 EUR
1051+0.068 EUR
3000+0.056 EUR
Mindestbestellmenge: 264 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: double series
Case: SOT323
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
325+0.22 EUR
454+0.16 EUR
521+0.14 EUR
694+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 239 Stücke
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BAT6406WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Case: SOT323
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
848+0.084 EUR
Mindestbestellmenge: 264 Stücke
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Voltage class: 200V
Type of integrated circuit: driver
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
34+2.14 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 34 Stücke
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BAS7004WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7004WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: double series
Case: SOT323
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
235+0.3 EUR
Mindestbestellmenge: 235 Stücke
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IRS2184STRPBF irs2184.pdf
IRS2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 2228 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
39+1.84 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 39 Stücke
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FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TT210N12KOF TT210N12KOF.pdf
TT210N12KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
56+1.29 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 56 Stücke
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BCR400WH6327XTSA1 BCR400W.pdf
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Mounting: SMD
Output current: 10mA
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Case: SOT343
Type of integrated circuit: driver
auf Bestellung 2866 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
313+0.23 EUR
447+0.16 EUR
491+0.15 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 313 Stücke
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IRS21844STRPBF infineon-irs2186-datasheet-en.pdf
IRS21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 2319 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
32+2.26 EUR
38+1.92 EUR
41+1.74 EUR
45+1.62 EUR
Mindestbestellmenge: 32 Stücke
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TLD1120ELXUMA1 TLD1120EL.pdf
TLD1120ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.36A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
76+0.94 EUR
91+0.79 EUR
102+0.71 EUR
103+0.7 EUR
Mindestbestellmenge: 76 Stücke
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BTS724G BTS724G.pdf
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 1479 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.72 EUR
Mindestbestellmenge: 10 Stücke
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ITS4141NHUMA1 ITS4141N.pdf
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: SOT223
Kind of package: reel; tape
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Output current: 0.7A
Number of channels: 1
Power dissipation: 1.4W
Supply voltage: 12...45V DC
auf Bestellung 2526 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+2 EUR
49+1.47 EUR
54+1.34 EUR
55+1.3 EUR
100+1.24 EUR
250+1.22 EUR
Mindestbestellmenge: 36 Stücke
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BAS4007WH6327XTSA1 BAS4004E6327HTSA1.pdf
BAS4007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT343
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Case: SOT323
auf Bestellung 1981 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
334+0.21 EUR
443+0.16 EUR
655+0.11 EUR
855+0.084 EUR
1000+0.075 EUR
Mindestbestellmenge: 334 Stücke
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ITS5215L ITS5215L.pdf
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
auf Bestellung 2038 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.89 EUR
28+2.6 EUR
33+2.19 EUR
35+2.06 EUR
Mindestbestellmenge: 25 Stücke
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IKD04N60RFATMA1 IKD04N60RF.pdf
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Collector current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
IRFP4668PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
IRF7103TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3807 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
59+1.22 EUR
93+0.77 EUR
143+0.5 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 59 Stücke
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IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341TRPBFXTMA1 infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
IRF7341TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1492 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
52+1.39 EUR
83+0.87 EUR
126+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 52 Stücke
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IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.48 EUR
25+2.95 EUR
28+2.56 EUR
100+2.12 EUR
Mindestbestellmenge: 16 Stücke
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IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
IRFP3077PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
22+3.33 EUR
24+2.99 EUR
28+2.65 EUR
30+2.46 EUR
Mindestbestellmenge: 22 Stücke
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IRS2153DSTRPBF irs2153d.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1037 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
29+2.49 EUR
32+2.29 EUR
42+1.73 EUR
49+1.47 EUR
55+1.3 EUR
100+1.16 EUR
200+1.04 EUR
500+0.9 EUR
1000+0.83 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7430PBF IRFB7430PBF.pdf
IRFB7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
21+3.53 EUR
23+3.16 EUR
25+2.86 EUR
Mindestbestellmenge: 21 Stücke
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IRFB3207PBF irfs3207pbf.pdf
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
6+11.91 EUR
Mindestbestellmenge: 6 Stücke
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1958 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65 Stücke
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BSO211PHXUMA1 BSO211PHXUMA1-dte.pdf
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
Mindestbestellmenge: 173 Stücke
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IRF100B201 IRF100x201.pdf
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1167 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.96 EUR
34+2.12 EUR
40+1.79 EUR
43+1.67 EUR
50+1.53 EUR
100+1.43 EUR
500+1.2 EUR
1000+1.12 EUR
Mindestbestellmenge: 25 Stücke
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BC817UE6327HTSA1 BC817UE6327.pdf
BC817UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
162+0.44 EUR
182+0.39 EUR
202+0.35 EUR
262+0.27 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 162 Stücke
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4140N ITS4140N.pdf
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
55+1.32 EUR
60+1.2 EUR
68+1.06 EUR
Mindestbestellmenge: 55 Stücke
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BSS159NH6327XTSA2 BSS159NH6327XTSA2.pdf
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: depletion
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
125+0.57 EUR
261+0.27 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR402WH6327XTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Case: SOT343
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
228+0.31 EUR
285+0.25 EUR
325+0.22 EUR
388+0.18 EUR
459+0.16 EUR
Mindestbestellmenge: 228 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3006GPBF irfb3006gpbf.pdf
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ICL8001GXUMA1 ICL8001G-DTE.pdf
ICL8001GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 54 Stücke
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IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.56 EUR
19+3.88 EUR
24+3.02 EUR
Mindestbestellmenge: 16 Stücke
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IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
Power: 1W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
28+2.56 EUR
Mindestbestellmenge: 28 Stücke
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IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 120V
Power dissipation: 300W
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.63 EUR
18+4.05 EUR
50+2.72 EUR
100+2.43 EUR
Mindestbestellmenge: 16 Stücke
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IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
39+1.83 EUR
Mindestbestellmenge: 39 Stücke
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