Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118747) > Seite 1980 nach 1980
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRFP4310ZPBFXKMA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 134A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
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IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
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IPB017N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
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| IPB017N10N5LFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 313W Case: D2PAK-7 On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 195nC Kind of channel: enhancement |
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IRS4427PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W Kind of package: tube Mounting: THT Operating temperature: -40...125°C Output current: -3.3...2.3A Turn-off time: 50ns Turn-on time: 50ns Power: 1W Number of channels: 2 Supply voltage: 6...20V DC Case: DIP8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Topology: MOSFET half-bridge |
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IRS4426SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Output current: -3.3...2.3A Turn-off time: 50ns Turn-on time: 50ns Power: 625mW Number of channels: 2 Supply voltage: 6...20V DC Case: SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Topology: MOSFET half-bridge |
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IRF7503TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET x2 Kind of package: reel Power dissipation: 1.25W Drain current: 2.4A Drain-source voltage: 30V Polarisation: unipolar |
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| IRFP4310ZPBFXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IPB017N10N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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| IPB017N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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| IPB017N10N5LFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRS4427PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Kind of package: tube
Mounting: THT
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-off time: 50ns
Turn-on time: 50ns
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Kind of package: tube
Mounting: THT
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-off time: 50ns
Turn-on time: 50ns
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
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| IRS4426SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-off time: 50ns
Turn-on time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-off time: 50ns
Turn-on time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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| IRF7503TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Power dissipation: 1.25W
Drain current: 2.4A
Drain-source voltage: 30V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Power dissipation: 1.25W
Drain current: 2.4A
Drain-source voltage: 30V
Polarisation: unipolar
Produkt ist nicht verfügbar
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