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SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES SPD18P06PGBTMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
59+1.22 EUR
65+1.12 EUR
72+1 EUR
80+0.9 EUR
Mindestbestellmenge: 42
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES SPD15P10PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
42+1.73 EUR
49+1.47 EUR
100+1.33 EUR
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IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 INFINEON TECHNOLOGIES IPD70R1K4P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
149+0.48 EUR
184+0.39 EUR
191+0.38 EUR
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2448 Stücke:
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53+1.36 EUR
77+0.94 EUR
82+0.87 EUR
90+0.8 EUR
109+0.66 EUR
114+0.63 EUR
500+0.57 EUR
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IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES IPD031N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
32+2.29 EUR
35+2.07 EUR
50+1.73 EUR
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IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES IPD031N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
99+0.72 EUR
106+0.68 EUR
109+0.66 EUR
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES IPD082N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
40+1.83 EUR
44+1.63 EUR
58+1.24 EUR
100+1.12 EUR
250+1 EUR
500+0.9 EUR
1000+0.86 EUR
Mindestbestellmenge: 32
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IPD60R280P7ATMA1 IPD60R280P7ATMA1 INFINEON TECHNOLOGIES IPD60R280P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
50+1.43 EUR
54+1.33 EUR
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Version: ESD
Gate charge: 35nC
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
31+2.32 EUR
35+2.04 EUR
36+1.99 EUR
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
112+0.64 EUR
147+0.49 EUR
160+0.45 EUR
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IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES IPD12CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1504 Stücke:
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35+2.1 EUR
37+1.97 EUR
46+1.57 EUR
52+1.4 EUR
60+1.2 EUR
100+1.16 EUR
Mindestbestellmenge: 35
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IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 16A
Gate charge: 9nC
auf Bestellung 2153 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
93+0.77 EUR
136+0.53 EUR
160+0.45 EUR
500+0.42 EUR
Mindestbestellmenge: 67
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IPD80R1K0CEATMA1 IPD80R1K0CEATMA1 INFINEON TECHNOLOGIES Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
111+0.65 EUR
148+0.48 EUR
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IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
165+0.43 EUR
178+0.4 EUR
195+0.37 EUR
210+0.34 EUR
218+0.33 EUR
Mindestbestellmenge: 148
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IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 120
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 11nC
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
57+1.28 EUR
64+1.13 EUR
91+0.79 EUR
105+0.68 EUR
250+0.59 EUR
Mindestbestellmenge: 48
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 INFINEON TECHNOLOGIES IPDD60R125G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 54A
Gate charge: 27nC
auf Bestellung 42 Stücke:
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18+4.08 EUR
19+3.83 EUR
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 INFINEON TECHNOLOGIES IPD80R2K0P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 9nC
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
94+0.76 EUR
114+0.63 EUR
Mindestbestellmenge: 56
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IRFS4410ZTRLPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 69A
Power dissipation: 230W
Drain-source voltage: 100V
Pulsed drain current: 390A
Type of transistor: N-MOSFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: D2PAK
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES IDW40G65C5B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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BSV236SPH6327XTSA1 BSV236SPH6327XTSA1 INFINEON TECHNOLOGIES BSV236SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.175Ω
Power dissipation: 0.56W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DDB6U50N16W1RBPSA1 INFINEON TECHNOLOGIES DDB6U50N16W1R.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.6kV
Case: AG-EASY1B
Topology: boost chopper; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DDB6U134N16RRBPSA1 INFINEON TECHNOLOGIES DDB6U134N16RR.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoBRIDGE™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 70A
Pulsed collector current: 150A
Power dissipation: 500W
Max. off-state voltage: 1.6kV
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 INFINEON TECHNOLOGIES DDB6U104N16RR.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoBRIDGE™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Max. off-state voltage: 1.6kV
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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TDB6HK180N16RRBPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305 Category: IGBT modules
Description: Module: IGBT; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Produkt ist nicht verfügbar
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TDB6HK180N16RRB11BPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR_B11-DS-v08_00-en_de.pdf?fileId=db3a3043156fd57301161f6857321f16 Category: IGBT modules
Description: Module: IGBT; AG-ECONO2B; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Case: AG-ECONO2B
Produkt ist nicht verfügbar
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TDB6HK180N16RRPB11BPSA1 INFINEON TECHNOLOGIES Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Category: IGBT modules
Description: Module: IGBT; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Produkt ist nicht verfügbar
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BAT5405E6327HTSA1 BAT5405E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 4537 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
596+0.12 EUR
650+0.11 EUR
782+0.092 EUR
852+0.084 EUR
1017+0.07 EUR
Mindestbestellmenge: 500
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
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BFP640H6327XTSA1 BFP640H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP640-DS-v03_00-EN.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 4.1V
Current gain: 110...270
Polarisation: bipolar
auf Bestellung 2617 Stücke:
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139+0.51 EUR
168+0.43 EUR
189+0.38 EUR
221+0.32 EUR
243+0.29 EUR
254+0.28 EUR
266+0.27 EUR
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BFP740H6327XTSA1 BFP740H6327XTSA1 INFINEON TECHNOLOGIES BFP740.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 44GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2397 Stücke:
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221+0.32 EUR
249+0.29 EUR
500+0.28 EUR
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES IPP600N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
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21+3.46 EUR
25+2.92 EUR
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IPA600N25NM3SXKSA1 IPA600N25NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
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IPB600N25N3GATMA1 IPB600N25N3GATMA1 INFINEON TECHNOLOGIES IPB600N25N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 INFINEON TECHNOLOGIES BSC600N25NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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CYUSB3014-BZXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: USB controller; GPIO,I2C,I2S,SPI,UART; 512kBSRAM; TFBGA121
Type of integrated circuit: USB controller
Interface: GPIO; I2C; I2S; SPI; UART
Memory: 512kB SRAM
Supply voltage: 1.15...1.25V DC
Case: TFBGA121
Integrated circuit features: watchdog
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
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IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 36W
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 351 Stücke:
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36+1.99 EUR
40+1.79 EUR
46+1.57 EUR
51+1.42 EUR
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IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2729 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
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BSC050N04LSGATMA1 BSC050N04LSGATMA1 INFINEON TECHNOLOGIES BSC050N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C4041KV13-667FCXC INFINEON TECHNOLOGIES Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IPA65R380C6XKSA1 IPA65R380C6XKSA1 INFINEON TECHNOLOGIES IPA65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 147 Stücke:
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35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
Mindestbestellmenge: 35
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IPB65R380C6ATMA1 IPB65R380C6ATMA1 INFINEON TECHNOLOGIES IPB65R380C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R380C6XKSA1 IPI65R380C6XKSA1 INFINEON TECHNOLOGIES IPI65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 INFINEON TECHNOLOGIES BSL296SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain current: 1.4A
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: OptiMOS™
Case: TSOP6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES IPT004N03L-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R180P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
auf Bestellung 100 Stücke:
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26+2.8 EUR
47+1.54 EUR
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IPB60R180P7ATMA1 IPB60R180P7ATMA1 INFINEON TECHNOLOGIES IPB60R180P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R180P7XKSA1 IPW60R180P7XKSA1 INFINEON TECHNOLOGIES IPW60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPAW60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 INFINEON TECHNOLOGIES IPZA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPAW60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
90+1.1 EUR
Mindestbestellmenge: 90
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TD500N16KOFHPSA1 TD500N16KOFHPSA1 INFINEON TECHNOLOGIES TD500N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF INFINEON TECHNOLOGIES TD500N18KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES TT500N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SPD18P06PGBTMA1 SPD18P06PGBTMA1-DTE.PDF
SPD18P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
59+1.22 EUR
65+1.12 EUR
72+1 EUR
80+0.9 EUR
Mindestbestellmenge: 42
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1-DTE.pdf
SPD15P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
42+1.73 EUR
49+1.47 EUR
100+1.33 EUR
Mindestbestellmenge: 30
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IPD70R1K4P7SAUMA1 IPD70R1K4P7S.pdf
IPD70R1K4P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
149+0.48 EUR
184+0.39 EUR
191+0.38 EUR
Mindestbestellmenge: 117
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IPD80R1K4P7ATMA1 IPD80R1K4P7.pdf
IPD80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
77+0.94 EUR
82+0.87 EUR
90+0.8 EUR
109+0.66 EUR
114+0.63 EUR
500+0.57 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N06L3GATMA1 IPD031N06L3G-DTE.pdf
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
32+2.29 EUR
35+2.07 EUR
50+1.73 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N03LGATMA1 IPD031N03LG-DTE.pdf
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
99+0.72 EUR
106+0.68 EUR
109+0.66 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IPD082N10N3GATMA1 IPD082N10N3G-DTE.pdf
IPD082N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
40+1.83 EUR
44+1.63 EUR
58+1.24 EUR
100+1.12 EUR
250+1 EUR
500+0.9 EUR
1000+0.86 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280P7ATMA1 IPD60R280P7.pdf
IPD60R280P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
50+1.43 EUR
54+1.33 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 104W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Version: ESD
Gate charge: 35nC
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
31+2.32 EUR
35+2.04 EUR
36+1.99 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
112+0.64 EUR
147+0.49 EUR
160+0.45 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
IPD12CN10NGATMA1 IPD12CN10NG-DTE.pdf
IPD12CN10NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
37+1.97 EUR
46+1.57 EUR
52+1.4 EUR
60+1.2 EUR
100+1.16 EUR
Mindestbestellmenge: 35
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IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 16A
Gate charge: 9nC
auf Bestellung 2153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
93+0.77 EUR
136+0.53 EUR
160+0.45 EUR
500+0.42 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K0CEATMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPD80R1K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
111+0.65 EUR
148+0.48 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
IPD075N03LGATMA1 IPD075N03LG-DTE.pdf
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
165+0.43 EUR
178+0.4 EUR
195+0.37 EUR
210+0.34 EUR
218+0.33 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K2P7ATMA1 IPD80R1K2P7.pdf
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 11nC
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
57+1.28 EUR
64+1.13 EUR
91+0.79 EUR
105+0.68 EUR
250+0.59 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R125G7XTMA1 IPDD60R125G7.pdf
IPDD60R125G7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 120W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 54A
Gate charge: 27nC
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
19+3.83 EUR
Mindestbestellmenge: 18
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IPD80R2K0P7ATMA1 IPD80R2K0P7.pdf
IPD80R2K0P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 9nC
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
94+0.76 EUR
114+0.63 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 69A
Power dissipation: 230W
Drain-source voltage: 100V
Pulsed drain current: 390A
Type of transistor: N-MOSFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA2 IDW40G65C5B.pdf
IDW40G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
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BSV236SPH6327XTSA1 BSV236SPH6327XTSA1-dte.pdf
BSV236SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.175Ω
Power dissipation: 0.56W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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DDB6U50N16W1RBPSA1 DDB6U50N16W1R.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.6kV
Case: AG-EASY1B
Topology: boost chopper; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DDB6U134N16RRBPSA1 DDB6U134N16RR.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoBRIDGE™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 70A
Pulsed collector current: 150A
Power dissipation: 500W
Max. off-state voltage: 1.6kV
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 DDB6U104N16RR.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoBRIDGE™
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Max. off-state voltage: 1.6kV
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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TDB6HK180N16RRBPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDB6HK180N16RRB11BPSA1 Infineon-TDB6HK180N16RR_B11-DS-v08_00-en_de.pdf?fileId=db3a3043156fd57301161f6857321f16
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; AG-ECONO2B; 515W; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Power dissipation: 515W
Case: AG-ECONO2B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDB6HK180N16RRPB11BPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; EconoPACK™ 2
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Technology: EconoPACK™ 2
Produkt ist nicht verfügbar
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BAT5405E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 4537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
650+0.11 EUR
782+0.092 EUR
852+0.084 EUR
1017+0.07 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAT5404E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BFP640H6327XTSA1 Infineon-BFP640-DS-v03_00-EN.pdf
BFP640H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 4.1V
Current gain: 110...270
Polarisation: bipolar
auf Bestellung 2617 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
168+0.43 EUR
189+0.38 EUR
221+0.32 EUR
243+0.29 EUR
254+0.28 EUR
266+0.27 EUR
Mindestbestellmenge: 139
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BFP740H6327XTSA1 BFP740.pdf
BFP740H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 44GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
198+0.36 EUR
221+0.32 EUR
249+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 198
Im Einkaufswagen  Stück im Wert von  UAH
IPP600N25N3GXKSA1 IPP600N25N3G-DTE.pdf
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
25+2.92 EUR
Mindestbestellmenge: 21
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IPA600N25NM3SXKSA1 Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d
IPA600N25NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IPB600N25N3GATMA1 IPB600N25N3G-DTE.pdf
IPB600N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 BSC600N25NS3G-DTE.pdf
BSC600N25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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CYUSB3014-BZXC download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; GPIO,I2C,I2S,SPI,UART; 512kBSRAM; TFBGA121
Type of integrated circuit: USB controller
Interface: GPIO; I2C; I2S; SPI; UART
Memory: 512kB SRAM
Supply voltage: 1.15...1.25V DC
Case: TFBGA121
Integrated circuit features: watchdog
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
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IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 36W
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.79 EUR
46+1.57 EUR
51+1.42 EUR
Mindestbestellmenge: 36
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IRFR2405TRPBF description irfr2405pbf.pdf
IRFR2405TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCV27E6327 BCV27E6327.pdf
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 179
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BSC050N04LSGATMA1 BSC050N04LSG-DTE.pdf
BSC050N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IPA65R380C6XKSA1 IPA65R380C6-DTE.pdf
IPA65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
Mindestbestellmenge: 35
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IPB65R380C6ATMA1 IPB65R380C6-DTE.pdf
IPB65R380C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R380C6XKSA1 IPI65R380C6-DTE.pdf
IPI65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1.pdf
BSL296SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain current: 1.4A
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: OptiMOS™
Case: TSOP6
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT004N03LATMA1 IPT004N03L-DTE.pdf
IPT004N03LATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
47+1.54 EUR
Mindestbestellmenge: 26
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IPB60R180P7ATMA1 IPB60R180P7.pdf
IPB60R180P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R180P7XKSA1 IPW60R180P7.pdf
IPW60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK; TO252
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 72W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK3
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPAW60R180P7SXKSA1 Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 26W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R180P7XKSA1 IPZA60R180P7.pdf
IPZA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPAW60R180P7SXKSA1 Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+1.1 EUR
Mindestbestellmenge: 90
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TD500N16KOFHPSA1 TD500N16KOF.pdf
TD500N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF.pdf
TD500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOF.pdf
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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