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IRFS31N20DTRLP IRFS31N20DTRLP INFINEON TECHNOLOGIES irfb31n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES irfp4332pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES IRFU4510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 143W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 945 Stücke:
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31+2.36 EUR
46+1.59 EUR
50+1.46 EUR
60+1.2 EUR
75+1.14 EUR
150+1.03 EUR
450+0.99 EUR
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IR21834STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
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IR2183STRPBF INFINEON TECHNOLOGIES infineon-ir2183-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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AUIRG4PH50SXKMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1375 Stücke:
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50+9.51 EUR
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IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES IPB035N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Technology: OptiMOS™ 3
Case: PG-TO263-3
On-state resistance: 3.5mΩ
Produkt ist nicht verfügbar
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 308 Stücke:
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13+5.72 EUR
14+5.21 EUR
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
auf Bestellung 81 Stücke:
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15+5.02 EUR
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ40N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
auf Bestellung 235 Stücke:
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11+6.78 EUR
12+6.13 EUR
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
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IKW40N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 56A
Pulsed collector current: 120A
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES IKY40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES IKY40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IRLS3036TRLPBF IRLS3036TRLPBF INFINEON TECHNOLOGIES IRLS3036TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 INFINEON TECHNOLOGIES FP40R12KT3BOSA1.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS740S2 BTS740S2 INFINEON TECHNOLOGIES BTS740S2.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 903 Stücke:
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8+9.55 EUR
11+6.84 EUR
100+5.65 EUR
250+5.23 EUR
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IPD70N03S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK; TO252
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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FM24C16B-G FM24C16B-G INFINEON TECHNOLOGIES Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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FM24C16B-GTR FM24C16B-GTR INFINEON TECHNOLOGIES Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAS7007E6433HTMA1 INFINEON TECHNOLOGIES INFNS30154-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Mounting: SMD
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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BAS7007WH6327XTSA1 BAS7007WH6327XTSA1 INFINEON TECHNOLOGIES INFNS30154-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 70V; 70mA; 250mW
Case: SOT343
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1312KV18-250BZXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
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IDM02G120C5XTMA1 IDM02G120C5XTMA1 INFINEON TECHNOLOGIES IDM02G120C5-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BTS640S2G BTS640S2G INFINEON TECHNOLOGIES BTS640S2G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 232 Stücke:
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10+7.21 EUR
14+5.31 EUR
100+4.29 EUR
Mindestbestellmenge: 10
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IRF2804PBF IRF2804PBF INFINEON TECHNOLOGIES irf2804pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2.3mΩ
auf Bestellung 755 Stücke:
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25+2.93 EUR
38+1.89 EUR
50+1.56 EUR
100+1.47 EUR
250+1.36 EUR
500+1.32 EUR
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IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES irfts9342pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -5.8A
Polarisation: unipolar
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
166+0.43 EUR
225+0.32 EUR
250+0.29 EUR
Mindestbestellmenge: 109
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES irlts2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 802 Stücke:
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103+0.69 EUR
157+0.46 EUR
248+0.29 EUR
500+0.21 EUR
Mindestbestellmenge: 103
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IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES irfts8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 200 Stücke:
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167+0.43 EUR
200+0.36 EUR
Mindestbestellmenge: 167
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES irlts6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
211+0.34 EUR
248+0.29 EUR
281+0.25 EUR
313+0.23 EUR
500+0.18 EUR
Mindestbestellmenge: 157
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IRF5801TRPBF IRF5801TRPBF INFINEON TECHNOLOGIES irf5801pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1874 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
127+0.56 EUR
145+0.49 EUR
205+0.35 EUR
240+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 105
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IRF5802TRPBF IRF5802TRPBF INFINEON TECHNOLOGIES irf5802pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
175+0.41 EUR
283+0.25 EUR
336+0.21 EUR
500+0.2 EUR
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES IPD034N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO252-3
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Kind of channel: enhancement
auf Bestellung 630 Stücke:
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36+1.99 EUR
41+1.76 EUR
55+1.32 EUR
100+1.3 EUR
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IPB014N06NATMA1 IPB014N06NATMA1 INFINEON TECHNOLOGIES IPB014N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 37 Stücke:
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IPP014N06NF2SAKMA2 IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 38 Stücke:
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BSC014N06NSATMA1 BSC014N06NSATMA1 INFINEON TECHNOLOGIES BSC014N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IPB054N06N3GATMA1 IPB054N06N3GATMA1 INFINEON TECHNOLOGIES IPB054N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC034N06NSATMA1 BSC034N06NSATMA1 INFINEON TECHNOLOGIES BSC034N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB034N06L3GATMA1 IPB034N06L3GATMA1 INFINEON TECHNOLOGIES IPB034N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB034N06N3GATMA2 INFINEON TECHNOLOGIES Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2EDS8165HXUMA1 2EDS8165HXUMA1 INFINEON TECHNOLOGIES 2EDF7xx5F_K_H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
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IDK10G65C5 INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A
Max. forward impulse current: 71A
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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IDK10G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 22µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 84A
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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BAR66E6327HTSA1 BAR66E6327HTSA1 INFINEON TECHNOLOGIES bar66series.pdf Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Type of diode: switching
Load current: 0.2A
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
334+0.21 EUR
385+0.19 EUR
459+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 278
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BAR6303WE6327HTSA1 BAR6303WE6327HTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Type of diode: switching
Load current: 0.1A
auf Bestellung 1234 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
625+0.11 EUR
725+0.099 EUR
848+0.084 EUR
910+0.079 EUR
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BAR6404E6327HTSA1 BAR6404E6327HTSA1 INFINEON TECHNOLOGIES BAR64-04.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Type of diode: switching
Load current: 0.1A
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
625+0.11 EUR
685+0.1 EUR
807+0.089 EUR
966+0.074 EUR
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.25 EUR
485+0.15 EUR
530+0.14 EUR
605+0.12 EUR
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BAR6302VH6327XTSA1 BAR6302VH6327XTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Type of diode: switching
Load current: 0.1A
auf Bestellung 2813 Stücke:
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385+0.19 EUR
463+0.15 EUR
532+0.13 EUR
652+0.11 EUR
966+0.074 EUR
1250+0.057 EUR
1279+0.056 EUR
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
685+0.1 EUR
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BAR6502VH6327XTSA1 INFINEON TECHNOLOGIES bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Max. forward voltage: 1V
Max. off-state voltage: 30V
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Produkt ist nicht verfügbar
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BAR6405E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-05-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f026ce63904 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: common cathode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6404WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; Ufmax: 1.1V; 250mW
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: single diode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6305WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.1A; Ufmax: 1.2V; 250mW
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: common cathode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6306WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.1A; Ufmax: 1.2V; 250mW
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: common cathode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6406E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: common anode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6702VH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749 Category: SMD universal diodes
Description: Diode: switching; SMD
Mounting: SMD
Type of diode: switching
Produkt ist nicht verfügbar
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BAR6402ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; 0402; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.1A
Case - mm: 1005
Case - inch: 0402
Max. forward voltage: 1.1V
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.086 EUR
Mindestbestellmenge: 15000
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BAR6406WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-06W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f030b2c390a Category: SMD universal diodes
Description: Diode: switching; 150V; SC70,SOT323; Ufmax: 1.1V
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Case: SC70; SOT323
Type of diode: switching
auf Bestellung 204000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.13 EUR
Mindestbestellmenge: 6000
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IRFS31N20DTRLP irfb31n20dpbf.pdf
IRFS31N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4332PBF description irfp4332pbf.pdf
IRFP4332PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFU4510PBF IRFU4510PBF.pdf
IRFU4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 143W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
46+1.59 EUR
50+1.46 EUR
60+1.2 EUR
75+1.14 EUR
150+1.03 EUR
450+0.99 EUR
Mindestbestellmenge: 31
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IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IR2183STRPBF infineon-ir2183-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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AUIRG4PH50SXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+10.57 EUR
50+9.51 EUR
Mindestbestellmenge: 25
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IPB035N08N3GATMA1 IPB035N08N3G-DTE.pdf
IPB035N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Technology: OptiMOS™ 3
Case: PG-TO263-3
On-state resistance: 3.5mΩ
Produkt ist nicht verfügbar
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IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 40A
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.72 EUR
14+5.21 EUR
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IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
15+5.02 EUR
30+4.53 EUR
Mindestbestellmenge: 13
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IKQ40N120CT2XKSA1 IKQ40N120CT2.pdf
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.78 EUR
12+6.13 EUR
30+5.55 EUR
Mindestbestellmenge: 11
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IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 56A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKY40N120CH3XKSA1 IKY40N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IKY40N120CS6XKSA1 IKY40N120CS6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IRLS3036TRLPBF IRLS3036TRLPBF.pdf
IRLS3036TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 FP40R12KT3BOSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS740S2 description BTS740S2.pdf
BTS740S2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.55 EUR
11+6.84 EUR
100+5.65 EUR
250+5.23 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK; TO252
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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FM24C16B-G Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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FM24C16B-GTR Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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BAS7007E6327 BAS7004E6327HTSA1.pdf
BAS7007E6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAS7007E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Mounting: SMD
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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BAS7007WH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 70V; 70mA; 250mW
Case: SOT343
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3G-DTE.pdf
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1312KV18-250BZXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
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IDM02G120C5XTMA1 IDM02G120C5-DTE.pdf
IDM02G120C5XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BTS640S2G BTS640S2G.pdf
BTS640S2G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
14+5.31 EUR
100+4.29 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804PBF irf2804pbf.pdf
IRF2804PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2.3mΩ
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
38+1.89 EUR
50+1.56 EUR
100+1.47 EUR
250+1.36 EUR
500+1.32 EUR
Mindestbestellmenge: 25
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IRFTS9342TRPBF irfts9342pbf.pdf
IRFTS9342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -5.8A
Polarisation: unipolar
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
166+0.43 EUR
225+0.32 EUR
250+0.29 EUR
Mindestbestellmenge: 109
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IRLTS2242TRPBF irlts2242pbf.pdf
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 802 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.69 EUR
157+0.46 EUR
248+0.29 EUR
500+0.21 EUR
Mindestbestellmenge: 103
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IRFTS8342TRPBF irfts8342pbf.pdf
IRFTS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
200+0.36 EUR
Mindestbestellmenge: 167
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IRLTS6342TRPBF irlts6342pbf.pdf
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
211+0.34 EUR
248+0.29 EUR
281+0.25 EUR
313+0.23 EUR
500+0.18 EUR
Mindestbestellmenge: 157
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IRF5801TRPBF irf5801pbf.pdf
IRF5801TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1874 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
127+0.56 EUR
145+0.49 EUR
205+0.35 EUR
240+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 105
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IRF5802TRPBF irf5802pbf.pdf
IRF5802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
175+0.41 EUR
283+0.25 EUR
336+0.21 EUR
500+0.2 EUR
Mindestbestellmenge: 129
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IPD034N06N3GATMA1 IPD034N06N3G-DTE.pdf
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO252-3
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Kind of channel: enhancement
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
36+1.99 EUR
41+1.76 EUR
55+1.32 EUR
100+1.3 EUR
Mindestbestellmenge: 29
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IPB014N06NATMA1 IPB014N06N-DTE.pdf
IPB014N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
18+4 EUR
22+3.27 EUR
24+3.02 EUR
Mindestbestellmenge: 15
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IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a
IPP014N06NF2SAKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.58 EUR
19+3.89 EUR
25+2.97 EUR
27+2.69 EUR
Mindestbestellmenge: 16
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BSC014N06NSATMA1 BSC014N06NS-DTE.pdf
BSC014N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB054N06N3GATMA1 IPB054N06N3G-DTE.pdf
IPB054N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC034N06NSATMA1 BSC034N06NS-DTE.pdf
BSC034N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB034N06L3GATMA1 IPB034N06L3G-DTE.pdf
IPB034N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB034N06N3GATMA2 Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2EDS8165HXUMA1 2EDF7xx5F_K_H.pdf
2EDS8165HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
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IDK10G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A
Max. forward impulse current: 71A
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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IDK10G120C5XTMA1 Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 22µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 84A
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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BAR66E6327HTSA1 bar66series.pdf
BAR66E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Type of diode: switching
Load current: 0.2A
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
334+0.21 EUR
385+0.19 EUR
459+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 278
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BAR6303WE6327HTSA1 BAR63xx_ser.pdf
BAR6303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Type of diode: switching
Load current: 0.1A
auf Bestellung 1234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
725+0.099 EUR
848+0.084 EUR
910+0.079 EUR
Mindestbestellmenge: 455
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BAR6404E6327HTSA1 BAR64-04.pdf
BAR6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Type of diode: switching
Load current: 0.1A
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
625+0.11 EUR
685+0.1 EUR
807+0.089 EUR
966+0.074 EUR
Mindestbestellmenge: 556
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.25 EUR
485+0.15 EUR
530+0.14 EUR
605+0.12 EUR
Mindestbestellmenge: 290
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BAR6302VH6327XTSA1 BAR63xx_ser.pdf
BAR6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Type of diode: switching
Load current: 0.1A
auf Bestellung 2813 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
463+0.15 EUR
532+0.13 EUR
652+0.11 EUR
966+0.074 EUR
1250+0.057 EUR
1279+0.056 EUR
Mindestbestellmenge: 385
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
685+0.1 EUR
Mindestbestellmenge: 209
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BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Max. forward voltage: 1V
Max. off-state voltage: 30V
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Produkt ist nicht verfügbar
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BAR6405E6327HTSA1 Infineon-BAR64-05-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f026ce63904
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: common cathode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6404WH6327XTSA1 Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; Ufmax: 1.1V; 250mW
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: single diode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.1A; Ufmax: 1.2V; 250mW
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: common cathode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.1A; Ufmax: 1.2V; 250mW
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Mounting: SMD
Semiconductor structure: common cathode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6406E6327HTSA1 Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: common anode
Application: automotive industry
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAR6702VH6327XTSA1 Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD
Mounting: SMD
Type of diode: switching
Produkt ist nicht verfügbar
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BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; 0402; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.1A
Case - mm: 1005
Case - inch: 0402
Max. forward voltage: 1.1V
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.086 EUR
Mindestbestellmenge: 15000
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BAR6406WH6327XTSA1 Infineon-BAR64-06W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f030b2c390a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; 150V; SC70,SOT323; Ufmax: 1.1V
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Case: SC70; SOT323
Type of diode: switching
auf Bestellung 204000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.13 EUR
Mindestbestellmenge: 6000
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