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IPA80R450P7XKSA1 IPA80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 24nC
Power dissipation: 29W
auf Bestellung 84 Stücke:
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29+2.49 EUR
48+1.5 EUR
55+1.3 EUR
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SPW32N50C3FKSA1 SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 12 Stücke:
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9+8.77 EUR
10+7.28 EUR
12+6.42 EUR
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IPP80R360P7XKSA1 IPP80R360P7XKSA1 INFINEON TECHNOLOGIES IPP80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IPA80R360P7XKSA1 IPA80R360P7XKSA1 INFINEON TECHNOLOGIES infineon-ipa80r360p7-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 34A
auf Bestellung 46 Stücke:
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25+2.89 EUR
32+2.27 EUR
37+1.96 EUR
43+1.7 EUR
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IPW80R360P7XKSA1 IPW80R360P7XKSA1 INFINEON TECHNOLOGIES IPW80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD80R360P7ATMA1 IPD80R360P7ATMA1 INFINEON TECHNOLOGIES IPD80R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPAN80R360P7XKSA1 IPAN80R360P7XKSA1 INFINEON TECHNOLOGIES IPAN80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES BSD235NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Case: SOT363
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.95A
On-state resistance: 0.35Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™ 2
Type of transistor: N-MOSFET x2
auf Bestellung 2988 Stücke:
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313+0.23 EUR
358+0.2 EUR
391+0.18 EUR
538+0.13 EUR
610+0.12 EUR
715+0.1 EUR
782+0.092 EUR
1000+0.087 EUR
Mindestbestellmenge: 313
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FM24CL64B-DG FM24CL64B-DG INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 2.7...3.6V DC
Memory organisation: 8kx8bit
Kind of interface: serial
Kind of memory: FRAM
auf Bestellung 934 Stücke:
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11+6.71 EUR
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FM24CL64B-GTR FM24CL64B-GTR INFINEON TECHNOLOGIES FM24CL64B-GTR-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 2.7...3.65V DC
Memory organisation: 8kx8bit
Kind of interface: serial
Kind of memory: FRAM
Produkt ist nicht verfügbar
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FM24CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 2.7...3.6V DC
Memory organisation: 8kx8bit
Kind of memory: FRAM
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES AUIRFB8405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 7 Stücke:
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7+10.21 EUR
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AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES AUIRFB8409.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRFR8405TRL INFINEON TECHNOLOGIES INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Collector-emitter voltage: 600V
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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IRF2804STRLPBF IRF2804STRLPBF INFINEON TECHNOLOGIES IRF2804STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 549 Stücke:
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21+3.43 EUR
32+2.26 EUR
35+2.06 EUR
50+1.82 EUR
100+1.64 EUR
200+1.5 EUR
Mindestbestellmenge: 21
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IRF2804STRL7PP IRF2804STRL7PP INFINEON TECHNOLOGIES irf2804s-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2804STRRPBF IRF2804STRRPBF INFINEON TECHNOLOGIES IRF2804STRRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES irf2804.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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AUIRF2804STRL AUIRF2804STRL INFINEON TECHNOLOGIES auirf2804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4241GMXUMA1 TLE4241GMXUMA1 INFINEON TECHNOLOGIES TLE4241GM.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Technology: Litix™
Case: PG-DSO-8
Output current: 70mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4...45V DC
Produkt ist nicht verfügbar
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FM25V10-GTR FM25V10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BSS131H6327 INFINEON TECHNOLOGIES BSS131.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES BSS131H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Kind of channel: enhancement
auf Bestellung 524 Stücke:
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239+0.3 EUR
327+0.22 EUR
424+0.17 EUR
517+0.14 EUR
Mindestbestellmenge: 239
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF6668TRPBF IRF6668TRPBF INFINEON TECHNOLOGIES irf6668pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6727MTRPBF IRF6727MTRPBF INFINEON TECHNOLOGIES irf6727mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6613TRPBF IRF6613TRPBF INFINEON TECHNOLOGIES irf6613pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES irf7759l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate charge: 200nC
On-state resistance: 2.3mΩ
Power dissipation: 125W
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF6646TRPBF IRF6646TRPBF INFINEON TECHNOLOGIES irf6646pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES irf6648pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7749L2TRPBF IRF7749L2TRPBF INFINEON TECHNOLOGIES irf7749l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7769L2TRPBF IRF7769L2TRPBF INFINEON TECHNOLOGIES irf7769l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7647S2TR AUIRF7647S2TR INFINEON TECHNOLOGIES auirf7647s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7648M2TR AUIRF7648M2TR INFINEON TECHNOLOGIES auirf7648m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7669L2TR AUIRF7669L2TR INFINEON TECHNOLOGIES auirf7669l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7675M2TR AUIRF7675M2TR INFINEON TECHNOLOGIES auirf7675m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 45W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7736M2TR AUIRF7736M2TR INFINEON TECHNOLOGIES auirf7736m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7737L2TR AUIRF7737L2TR INFINEON TECHNOLOGIES auirf7737l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 83W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7739L2TR AUIRF7739L2TR INFINEON TECHNOLOGIES auirf7739l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL7732S2TR AUIRL7732S2TR INFINEON TECHNOLOGIES auirl7732s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL7736M2TR AUIRL7736M2TR INFINEON TECHNOLOGIES auirl7736m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6617TRPBF IRF6617TRPBF INFINEON TECHNOLOGIES irf6617pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6623TRPBF IRF6623TRPBF INFINEON TECHNOLOGIES irf6623pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6674TRPBF IRF6674TRPBF INFINEON TECHNOLOGIES irf6674pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6715MTRPBF IRF6715MTRPBF INFINEON TECHNOLOGIES irf6715mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6716MTRPBF IRF6716MTRPBF INFINEON TECHNOLOGIES irf6716mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES irf6775mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6785MTRPBF IRF6785MTRPBF INFINEON TECHNOLOGIES irf6785mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 57W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6795MTRPBF IRF6795MTRPBF INFINEON TECHNOLOGIES irf6795mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 75W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6811STRPBF IRF6811STRPBF INFINEON TECHNOLOGIES irf6811spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 32W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6894MTRPBF IRF6894MTRPBF INFINEON TECHNOLOGIES irf6894mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRF6898MTRPBF INFINEON TECHNOLOGIES irf6898mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L1TRPBF IRF7739L1TRPBF INFINEON TECHNOLOGIES IRF7739L1TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES irf7739l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7779L2TRPBF IRF7779L2TRPBF INFINEON TECHNOLOGIES irf7779l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES IRF7946TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPA80R450P7XKSA1 Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be
IPA80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 24nC
Power dissipation: 29W
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
48+1.5 EUR
55+1.3 EUR
Mindestbestellmenge: 29
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SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
SPW32N50C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.77 EUR
10+7.28 EUR
12+6.42 EUR
Mindestbestellmenge: 9
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IPP80R360P7XKSA1 IPP80R360P7.pdf
IPP80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1 Stücke:
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Anzahl Preis
1+71.5 EUR
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IPA80R360P7XKSA1 infineon-ipa80r360p7-datasheet-en.pdf
IPA80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 34A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
32+2.27 EUR
37+1.96 EUR
43+1.7 EUR
Mindestbestellmenge: 25
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IPW80R360P7XKSA1 IPW80R360P7.pdf
IPW80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD80R360P7ATMA1 IPD80R360P7.pdf
IPD80R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPAN80R360P7XKSA1 IPAN80R360P7.pdf
IPAN80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSD235NH6327XTSA1 BSD235NH6327XTSA1.pdf
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Case: SOT363
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.95A
On-state resistance: 0.35Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™ 2
Type of transistor: N-MOSFET x2
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
358+0.2 EUR
391+0.18 EUR
538+0.13 EUR
610+0.12 EUR
715+0.1 EUR
782+0.092 EUR
1000+0.087 EUR
Mindestbestellmenge: 313
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FM24CL64B-DG Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL64B-DG
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 2.7...3.6V DC
Memory organisation: 8kx8bit
Kind of interface: serial
Kind of memory: FRAM
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.71 EUR
Mindestbestellmenge: 11
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FM24CL64B-GTR FM24CL64B-GTR-DTE.pdf
FM24CL64B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 2.7...3.65V DC
Memory organisation: 8kx8bit
Kind of interface: serial
Kind of memory: FRAM
Produkt ist nicht verfügbar
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FM24CL64B-DGTR Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 2.7...3.6V DC
Memory organisation: 8kx8bit
Kind of memory: FRAM
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AUIRFB8405 AUIRFB8405.pdf
AUIRFB8405
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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AUIRFB8409 AUIRFB8409.pdf
AUIRFB8409
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRFR8405TRL INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Collector-emitter voltage: 600V
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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IRF2804STRLPBF IRF2804STRLPBF.pdf
IRF2804STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
32+2.26 EUR
35+2.06 EUR
50+1.82 EUR
100+1.64 EUR
200+1.5 EUR
Mindestbestellmenge: 21
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IRF2804STRL7PP irf2804s-7ppbf.pdf
IRF2804STRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2804STRRPBF IRF2804STRRPBF.pdf
IRF2804STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L irf2804.pdf
AUIRF2804L
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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AUIRF2804STRL auirf2804.pdf
AUIRF2804STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4241GMXUMA1 TLE4241GM.pdf
TLE4241GMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Technology: Litix™
Case: PG-DSO-8
Output current: 70mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4...45V DC
Produkt ist nicht verfügbar
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FM25V10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25V10-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSS131H6327 BSS131.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS131H6327XTSA1 BSS131H6327XTSA1.pdf
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Kind of channel: enhancement
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
327+0.22 EUR
424+0.17 EUR
517+0.14 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6668TRPBF irf6668pbf.pdf
IRF6668TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6727MTRPBF irf6727mpbf.pdf
IRF6727MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6613TRPBF irf6613pbf.pdf
IRF6613TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7759L2TRPBF irf7759l2pbf.pdf
IRF7759L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate charge: 200nC
On-state resistance: 2.3mΩ
Power dissipation: 125W
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF6646TRPBF irf6646pbf.pdf
IRF6646TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6648TRPBF irf6648pbf.pdf
IRF6648TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7749L2TRPBF irf7749l2pbf.pdf
IRF7749L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7769L2TRPBF irf7769l2pbf.pdf
IRF7769L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7647S2TR auirf7647s2.pdf
AUIRF7647S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7648M2TR auirf7648m2.pdf
AUIRF7648M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7669L2TR auirf7669l2.pdf
AUIRF7669L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7675M2TR auirf7675m2.pdf
AUIRF7675M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 45W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7736M2TR auirf7736m2.pdf
AUIRF7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7737L2TR auirf7737l2.pdf
AUIRF7737L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 83W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7739L2TR auirf7739l2.pdf
AUIRF7739L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRL7732S2TR auirl7732s2.pdf
AUIRL7732S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRL7736M2TR auirl7736m2.pdf
AUIRL7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRF6617TRPBF irf6617pbf.pdf
IRF6617TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6623TRPBF irf6623pbf.pdf
IRF6623TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6674TRPBF irf6674pbf.pdf
IRF6674TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6715MTRPBF irf6715mpbf.pdf
IRF6715MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6716MTRPBF irf6716mpbf.pdf
IRF6716MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6775MTRPBF irf6775mpbf.pdf
IRF6775MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF6785MTRPBF irf6785mpbf.pdf
IRF6785MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 57W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6795MTRPBF irf6795mpbf.pdf
IRF6795MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 75W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6811STRPBF irf6811spbf.pdf
IRF6811STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 32W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6894MTRPBF irf6894mpbf.pdf
IRF6894MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6898MTRPBF irf6898mpbf.pdf
IRF6898MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L1TRPBF IRF7739L1TRPBF.pdf
IRF7739L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L2TRPBF irf7739l2pbf.pdf
IRF7739L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7779L2TRPBF irf7779l2pbf.pdf
IRF7779L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7946TRPBF IRF7946TRPBF.pdf
IRF7946TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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