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BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
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FM24CL04B-GTR FM24CL04B-GTR INFINEON TECHNOLOGIES Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES BFP760.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES irfb4227pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
auf Bestellung 714 Stücke:
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29+2.53 EUR
36+2 EUR
44+1.63 EUR
52+1.39 EUR
100+1.19 EUR
250+1.02 EUR
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IRFB4227PBFXKMA1 IRFB4227PBFXKMA1 INFINEON TECHNOLOGIES irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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29+2.53 EUR
32+2.23 EUR
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SPP15N60CFDXKSA1 INFINEON TECHNOLOGIES SPP15N60CFD_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e8cee49eb Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: 20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 84nC
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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50+2.69 EUR
200+2.42 EUR
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES irf7424pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
auf Bestellung 999 Stücke:
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28+2.63 EUR
31+2.35 EUR
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ITS6035SEPKXUMA1 INFINEON TECHNOLOGIES Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
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3000+2.8 EUR
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SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES SPP11N80C3-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
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26+2.76 EUR
35+2.04 EUR
50+1.79 EUR
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IRFP3006PBF IRFP3006PBF INFINEON TECHNOLOGIES IRFP3006PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 109 Stücke:
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14+5.26 EUR
19+3.83 EUR
25+3.22 EUR
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BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES BTS50085-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 7.2mΩ
Number of channels: 1
Output current: 38A
Supply voltage: 5...58V DC
Technology: High Current PROFET
Case: PG-TO220-7-4
Kind of integrated circuit: high-side
auf Bestellung 501 Stücke:
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8+9.07 EUR
10+8.22 EUR
25+7.61 EUR
50+7.24 EUR
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BTS441RG BTS441RG INFINEON TECHNOLOGIES BTS441RG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 270 Stücke:
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15+4.86 EUR
17+4.29 EUR
25+3.85 EUR
100+3.65 EUR
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BTS6133D BTS6133D INFINEON TECHNOLOGIES BTS6133D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Mounting: SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: TO252-5
On-state resistance: 8mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 33A
auf Bestellung 1292 Stücke:
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22+3.4 EUR
25+2.96 EUR
28+2.6 EUR
32+2.3 EUR
40+2.19 EUR
50+2.16 EUR
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BSP752R BSP752R INFINEON TECHNOLOGIES BSP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 1798 Stücke:
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35+2.09 EUR
43+1.7 EUR
44+1.63 EUR
50+1.57 EUR
100+1.52 EUR
250+1.46 EUR
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BTS4300SGA BTS4300SGA INFINEON TECHNOLOGIES BTS4300SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2457 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.66 EUR
42+1.73 EUR
48+1.52 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 27
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 106 Stücke:
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46+1.59 EUR
85+0.84 EUR
87+0.83 EUR
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 326 Stücke:
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43+1.69 EUR
66+1.09 EUR
75+0.96 EUR
Mindestbestellmenge: 43
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES IPN70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES IPS70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES BSP129H6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1263 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
122+0.59 EUR
154+0.46 EUR
161+0.44 EUR
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
321+0.22 EUR
516+0.14 EUR
596+0.12 EUR
676+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 239
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Kind of channel: enhancement
Technology: OptiMOS™ P
Case: PG-TSOP-6
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 6000 Stücke:
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90+0.8 EUR
125+0.57 EUR
186+0.39 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.29 EUR
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 90
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SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES SPD50P03LGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
On-state resistance: 7mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
auf Bestellung 1141 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.9 EUR
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
96+0.75 EUR
153+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 63
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
auf Bestellung 2211 Stücke:
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218+0.33 EUR
222+0.32 EUR
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IPD122N10N3GATMA1 IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2234 Stücke:
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36+1.99 EUR
40+1.82 EUR
47+1.54 EUR
55+1.32 EUR
64+1.13 EUR
77+0.93 EUR
100+0.83 EUR
500+0.72 EUR
Mindestbestellmenge: 36
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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES IRF40R207.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 122 Stücke:
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68+1.06 EUR
81+0.89 EUR
91+0.79 EUR
122+0.59 EUR
Mindestbestellmenge: 68
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CY15B004Q-SXE CY15B004Q-SXE INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 16MHz
Memory organisation: 512x8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 ICE3PCS03GXUMA1 INFINEON TECHNOLOGIES ICE3PCS03G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS01G ICE3PCS01G INFINEON TECHNOLOGIES ICE3PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1366 Stücke:
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18+3.98 EUR
28+2.65 EUR
100+2.1 EUR
250+1.87 EUR
500+1.72 EUR
1000+1.64 EUR
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ICE3PCS01GXUMA1 INFINEON TECHNOLOGIES Infineon-ICE3PCS01-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67ae8c02b46 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 21÷100kHz; SOIC14; boost; 85÷265V
Type of integrated circuit: PMIC
Frequency: 21...100kHz
Case: SOIC14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 85...265V
auf Bestellung 20000 Stücke:
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2500+1.12 EUR
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IRLR7833TRPBF IRLR7833TRPBF INFINEON TECHNOLOGIES irlr7833pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRLR120NTRPBF IRLR120NTRPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 11542 Stücke:
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64+1.13 EUR
98+0.73 EUR
130+0.55 EUR
250+0.49 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 64
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CY62148EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
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CY62148EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
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BC849BE6327HTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
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18000+0.034 EUR
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IPB025N10N3GATMA1 IPB025N10N3GATMA1 INFINEON TECHNOLOGIES IPB025N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.61 EUR
13+5.88 EUR
16+4.69 EUR
100+4.12 EUR
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IPB025N08N3GATMA1 IPB025N08N3GATMA1 INFINEON TECHNOLOGIES IPB025N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.15 EUR
23+3.12 EUR
100+2.5 EUR
250+2.29 EUR
Mindestbestellmenge: 18
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BSC016N06NSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES BAS125-0xW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Max. forward voltage: 0.95V
Max. off-state voltage: 25V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2745 Stücke:
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79+0.92 EUR
94+0.76 EUR
108+0.67 EUR
155+0.46 EUR
181+0.4 EUR
250+0.33 EUR
500+0.29 EUR
Mindestbestellmenge: 79
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BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Type of diode: switching
Load current: 0.1A
auf Bestellung 4405 Stücke:
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278+0.26 EUR
368+0.19 EUR
447+0.16 EUR
582+0.12 EUR
Mindestbestellmenge: 278
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BSR315PH6327XTSA1 BSR315PH6327XTSA1 INFINEON TECHNOLOGIES BSR315PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
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IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.28 EUR
10+8.05 EUR
27+7.52 EUR
Mindestbestellmenge: 8
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IR2135JPBF IR2135JPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.41 EUR
6+13 EUR
10+11.43 EUR
Mindestbestellmenge: 5
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IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES irfp150n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
Kind of package: tube
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
44+1.63 EUR
55+1.3 EUR
100+1.19 EUR
125+1.16 EUR
250+1.1 EUR
400+1.06 EUR
Mindestbestellmenge: 27
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BTS70101EPAXUMA1 BTS70101EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7010-1EPA-DataSheet-v01_02-EN.pdf?fileId=5546d462636cc8fb0163fe8fada108bf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Number of channels: 1
Output current: 9A
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
auf Bestellung 2318 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
52+1.39 EUR
55+1.32 EUR
58+1.24 EUR
100+1.2 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.03 EUR
Mindestbestellmenge: 45
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES BAW101E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 1913 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
31+2.36 EUR
33+2.2 EUR
36+2.02 EUR
50+1.97 EUR
Mindestbestellmenge: 25
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PVI1050NSPBFHLLA1 PVI1050NSPBFHLLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.09 EUR
Mindestbestellmenge: 50
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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES IKD03N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Turn-on time: 17ns
Turn-off time: 265ns
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES SP_03N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES BSC109N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSS87H6327FTSA1 BSS87H6327FTSA1 INFINEON TECHNOLOGIES BSS87H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
189+0.38 EUR
274+0.26 EUR
298+0.24 EUR
307+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 125
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BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.7nC
Drain current: 0.12A
Power dissipation: 1.8W
On-state resistance: 30Ω
Drain-source voltage: 600V
Case: SOT23
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES BCV62.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IR2127STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IR21271STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
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FM24CL04B-GTR Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL04B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BFP760H6327XTSA1 BFP760.pdf
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IRFB4227PBF irfb4227pbf.pdf
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
36+2 EUR
44+1.63 EUR
52+1.39 EUR
100+1.19 EUR
250+1.02 EUR
Mindestbestellmenge: 29
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IRFB4227PBFXKMA1 irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
32+2.23 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
SPP15N60CFDXKSA1 SPP15N60CFD_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e8cee49eb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: 20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 84nC
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.69 EUR
200+2.42 EUR
Mindestbestellmenge: 50
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IRF7424TRPBF irf7424pbf.pdf
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2HS01GXUMA1 ICE2HS01G.pdf
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
31+2.35 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+2.8 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 SPP11N80C3-dte.pdf
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
35+2.04 EUR
50+1.79 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBF IRFP3006PBF.pdf
IRFP3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
19+3.83 EUR
25+3.22 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BTS50085-1TMA BTS50085-1TMA.pdf
BTS50085-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 7.2mΩ
Number of channels: 1
Output current: 38A
Supply voltage: 5...58V DC
Technology: High Current PROFET
Case: PG-TO220-7-4
Kind of integrated circuit: high-side
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.07 EUR
10+8.22 EUR
25+7.61 EUR
50+7.24 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BTS441RG BTS441RG.pdf
BTS441RG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
17+4.29 EUR
25+3.85 EUR
100+3.65 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BTS6133D BTS6133D.pdf
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Mounting: SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: TO252-5
On-state resistance: 8mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 33A
auf Bestellung 1292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
25+2.96 EUR
28+2.6 EUR
32+2.3 EUR
40+2.19 EUR
50+2.16 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSP752R BSP752R.pdf
BSP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
43+1.7 EUR
44+1.63 EUR
50+1.57 EUR
100+1.52 EUR
250+1.46 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BTS4300SGA BTS4300SGA.pdf
BTS4300SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 2457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
42+1.73 EUR
48+1.52 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
85+0.84 EUR
87+0.83 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SXKSA1 IPAN70R360P7S.pdf
IPAN70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
66+1.09 EUR
75+0.96 EUR
Mindestbestellmenge: 43
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IPN70R360P7SATMA1 IPN70R360P7S.pdf
IPN70R360P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 IPS70R360P7S.pdf
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSP129H6327XTSA1 BSP129H6327-DTE.pdf
BSP129H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
122+0.59 EUR
154+0.46 EUR
161+0.44 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
Gate-source voltage: ±12V
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
321+0.22 EUR
516+0.14 EUR
596+0.12 EUR
676+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
BSL207SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Kind of channel: enhancement
Technology: OptiMOS™ P
Case: PG-TSOP-6
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
125+0.57 EUR
186+0.39 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.29 EUR
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 90
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SPD50P03LGBTMA1 SPD50P03LGBTMA1-DTE.pdf
SPD50P03LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
On-state resistance: 7mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
auf Bestellung 1141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.9 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
96+0.75 EUR
153+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 63
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BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
222+0.32 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
IPD122N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.82 EUR
47+1.54 EUR
55+1.32 EUR
64+1.13 EUR
77+0.93 EUR
100+0.83 EUR
500+0.72 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF40R207 IRF40R207.pdf
IRF40R207
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
81+0.89 EUR
91+0.79 EUR
122+0.59 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004Q-SXE CY15B004Q_RevC_6-4-19.pdf
CY15B004Q-SXE
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 4kb FRAM
Clock frequency: 16MHz
Memory organisation: 512x8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 ICE3PCS03G.pdf
ICE3PCS03GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01G ICE3PCS01G.pdf
ICE3PCS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1366 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
28+2.65 EUR
100+2.1 EUR
250+1.87 EUR
500+1.72 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
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ICE3PCS01GXUMA1 Infineon-ICE3PCS01-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67ae8c02b46
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 21÷100kHz; SOIC14; boost; 85÷265V
Type of integrated circuit: PMIC
Frequency: 21...100kHz
Case: SOIC14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 85...265V
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.12 EUR
Mindestbestellmenge: 2500
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IRLR7833TRPBF irlr7833pbf.pdf
IRLR7833TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFR9120NTRLPBF irfr9120npbf.pdf
IRFR9120NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRLR120NTRPBF description irlr120npbf.pdf
IRLR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 11542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
98+0.73 EUR
130+0.55 EUR
250+0.49 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 64
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CY62148EV30LL-45BVXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
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CY62148EV30LL-45ZSXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
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BC849BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Current gain: 200
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18000+0.034 EUR
Mindestbestellmenge: 18000
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IPB025N10N3GATMA1 IPB025N10N3G-DTE.pdf
IPB025N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.61 EUR
13+5.88 EUR
16+4.69 EUR
100+4.12 EUR
Mindestbestellmenge: 11
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IPB025N08N3GATMA1 IPB025N08N3G-DTE.pdf
IPB025N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
23+3.12 EUR
100+2.5 EUR
250+2.29 EUR
Mindestbestellmenge: 18
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BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS12504WH6327XTSA1 BAS125-0xW.pdf
BAS12504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Max. forward voltage: 0.95V
Max. off-state voltage: 25V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
94+0.76 EUR
108+0.67 EUR
155+0.46 EUR
181+0.4 EUR
250+0.33 EUR
500+0.29 EUR
Mindestbestellmenge: 79
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BAR6405WH6327XTSA1 BAR64xx_Ser.pdf
BAR6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT323; double,common cathode
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Type of diode: switching
Load current: 0.1A
auf Bestellung 4405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
368+0.19 EUR
447+0.16 EUR
582+0.12 EUR
Mindestbestellmenge: 278
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BSR315PH6327XTSA1 BSR315PH6327XTSA1.pdf
BSR315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
Mindestbestellmenge: 62
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IR2233JPBF IR2133JPBF.pdf
IR2233JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.28 EUR
10+8.05 EUR
27+7.52 EUR
Mindestbestellmenge: 8
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IR2135JPBF IR2133JPBF.pdf
IR2135JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+13 EUR
10+11.43 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFP150NPBF description irfp150n.pdf
IRFP150NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
Kind of package: tube
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
44+1.63 EUR
55+1.3 EUR
100+1.19 EUR
125+1.16 EUR
250+1.1 EUR
400+1.06 EUR
Mindestbestellmenge: 27
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BTS70101EPAXUMA1 Infineon-BTS7010-1EPA-DataSheet-v01_02-EN.pdf?fileId=5546d462636cc8fb0163fe8fada108bf
BTS70101EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Number of channels: 1
Output current: 9A
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
auf Bestellung 2318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
52+1.39 EUR
55+1.32 EUR
58+1.24 EUR
100+1.2 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.03 EUR
Mindestbestellmenge: 45
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BAW101E6327HTSA1 BAW101E6327HTSA1.pdf
BAW101E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665XKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 1913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
31+2.36 EUR
33+2.2 EUR
36+2.02 EUR
50+1.97 EUR
Mindestbestellmenge: 25
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBFHLLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.09 EUR
Mindestbestellmenge: 50
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IKD03N60RFATMA1 IKD03N60RF.pdf
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Turn-on time: 17ns
Turn-off time: 265ns
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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SPU03N60C3BKMA1 SP_03N60C3.pdf
SPU03N60C3BKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC109N10NS3GATMA1 BSC109N10NS3G-DTE.pdf
BSC109N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSS87H6327FTSA1 BSS87H6327FTSA1.pdf
BSS87H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
189+0.38 EUR
274+0.26 EUR
298+0.24 EUR
307+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 125
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BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.7nC
Drain current: 0.12A
Power dissipation: 1.8W
On-state resistance: 30Ω
Drain-source voltage: 600V
Case: SOT23
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62.pdf
BCV62BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IR2127STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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