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IRFS4321TRLPBF IRFS4321TRLPBF INFINEON TECHNOLOGIES IRFS4321TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 210 Stücke:
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19+3.9 EUR
26+2.77 EUR
29+2.5 EUR
50+2.2 EUR
100+2 EUR
200+1.82 EUR
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IRFS7730TRLPBF IRFS7730TRLPBF INFINEON TECHNOLOGIES IRFS7730PBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
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18+4.06 EUR
21+3.52 EUR
23+3.23 EUR
50+2.87 EUR
100+2.59 EUR
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IRFSL7437PBF IRFSL7437PBF INFINEON TECHNOLOGIES irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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29+2.53 EUR
39+1.87 EUR
42+1.7 EUR
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IRFS4127TRLPBF IRFS4127TRLPBF INFINEON TECHNOLOGIES irfs4127pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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25+2.86 EUR
29+2.5 EUR
50+2.13 EUR
100+1.89 EUR
200+1.79 EUR
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IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES irfs4010pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
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IRFS3306TRLPBF IRFS3306TRLPBF INFINEON TECHNOLOGIES irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Case: D2PAK
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 60V
Power dissipation: 230W
Pulsed drain current: 620A
Kind of channel: enhancement
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25+2.92 EUR
31+2.32 EUR
34+2.12 EUR
50+1.89 EUR
100+1.72 EUR
200+1.64 EUR
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IRFS4010TRLPBF IRFS4010TRLPBF INFINEON TECHNOLOGIES IRFS4010TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 790 Stücke:
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IRFS4615TRLPBF IRFS4615TRLPBF INFINEON TECHNOLOGIES irfs4615pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS4310TRLPBF IRFS4310TRLPBF INFINEON TECHNOLOGIES irfs4310pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Polarisation: unipolar
Case: D2PAK
Produkt ist nicht verfügbar
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IRFS52N15DTRRP IRFS52N15DTRRP INFINEON TECHNOLOGIES IRFS52N15DTRRP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS4020TRLPBF IRFS4020TRLPBF INFINEON TECHNOLOGIES IRFS4020TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS4229TRLPBF IRFS4229TRLPBF INFINEON TECHNOLOGIES irfs4229pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS3307ZTRLPBF IRFS3307ZTRLPBF INFINEON TECHNOLOGIES IRFS3307ZTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS3006TRL7PP IRFS3006TRL7PP INFINEON TECHNOLOGIES irfs3006-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS3107TRLPBF IRFS3107TRLPBF INFINEON TECHNOLOGIES irfs3107-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFSL3206PBF IRFSL3206PBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFSL7430PBF IRFSL7430PBF INFINEON TECHNOLOGIES IRFSL7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
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IRFS7730TRL7PP INFINEON TECHNOLOGIES infineon-irfs7730-7p-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3004TRL7PP INFINEON TECHNOLOGIES irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFSL4127PBF INFINEON TECHNOLOGIES irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: TO262
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS23N20DTRLP IRFS23N20DTRLP INFINEON TECHNOLOGIES IRFS23N20DTRLP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhancement
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IRFS3004TRLPBF INFINEON TECHNOLOGIES irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFS3006TRLPBF INFINEON TECHNOLOGIES irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRL7PP IRFS3107TRL7PP INFINEON TECHNOLOGIES irfs3107-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3607TRLPBF IRFS3607TRLPBF INFINEON TECHNOLOGIES irfs3607pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS3806TRLPBF INFINEON TECHNOLOGIES irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFS38N20DTRLP IRFS38N20DTRLP INFINEON TECHNOLOGIES irfs38n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2156STRPBF INFINEON TECHNOLOGIES ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
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IRFR4105TRPBF IRFR4105TRPBF INFINEON TECHNOLOGIES irfr4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR4105ZTRL AUIRFR4105ZTRL INFINEON TECHNOLOGIES auirfr4105.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES irf3805.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Gate charge: 0.19µC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Polarisation: unipolar
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IRF3805STRLPBF INFINEON TECHNOLOGIES irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES irf3315spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES IRF3610STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
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IRF3709ZSTRRPBF INFINEON TECHNOLOGIES irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
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IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES irf3805s-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES IPD80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 15nC
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
64+1.13 EUR
74+0.97 EUR
89+0.81 EUR
100+0.77 EUR
500+0.71 EUR
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IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES IPU80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
65+1.11 EUR
79+0.92 EUR
150+0.85 EUR
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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES infineon-ips80r900p7-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Case: IPAK SL
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES irlb4030pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 87nC
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
21+3.55 EUR
27+2.67 EUR
50+1.87 EUR
100+1.77 EUR
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IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
96+0.75 EUR
116+0.62 EUR
125+0.57 EUR
250+0.52 EUR
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IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES IPP12CN10LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES IRS2008S.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
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IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES IRS2007SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
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IRS2001STRPBF INFINEON TECHNOLOGIES irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
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IRS2011STRPBF INFINEON TECHNOLOGIES INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
Produkt ist nicht verfügbar
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IRS2004STRPBF INFINEON TECHNOLOGIES irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
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IRS2093MTRPBF INFINEON TECHNOLOGIES IRS2093MTRPBF.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRS2005MTRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.73 EUR
Mindestbestellmenge: 3000
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2345 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
85+0.84 EUR
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
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ICE2A180ZXKLA1
+1
 		ICE2A180ZXKLA1 INFINEON TECHNOLOGIES ICE2A265.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES irfl024npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES 1ED020I12-F2.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.79 EUR
18+4.1 EUR
20+3.76 EUR
25+3.42 EUR
Mindestbestellmenge: 15
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-20
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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IRFS4321TRLPBF IRFS4321TRLPBF.pdf
IRFS4321TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 210 Stücke:
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Anzahl Preis
19+3.9 EUR
26+2.77 EUR
29+2.5 EUR
50+2.2 EUR
100+2 EUR
200+1.82 EUR
Mindestbestellmenge: 19
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IRFS7730TRLPBF IRFS7730PBF.pdf
IRFS7730TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
21+3.52 EUR
23+3.23 EUR
50+2.87 EUR
100+2.59 EUR
Mindestbestellmenge: 18
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IRFSL7437PBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFSL7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
39+1.87 EUR
42+1.7 EUR
Mindestbestellmenge: 29
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IRFS4127TRLPBF irfs4127pbf.pdf
IRFS4127TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
25+2.86 EUR
29+2.5 EUR
50+2.13 EUR
100+1.89 EUR
200+1.79 EUR
Mindestbestellmenge: 19
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IRFSL4010PBF description irfs4010pbf.pdf
IRFSL4010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IRFS3306TRLPBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFS3306TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Case: D2PAK
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 60V
Power dissipation: 230W
Pulsed drain current: 620A
Kind of channel: enhancement
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
25+2.92 EUR
31+2.32 EUR
34+2.12 EUR
50+1.89 EUR
100+1.72 EUR
200+1.64 EUR
Mindestbestellmenge: 21
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IRFS4010TRLPBF IRFS4010TRLPBF.pdf
IRFS4010TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
Mindestbestellmenge: 24
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IRFS4615TRLPBF irfs4615pbf.pdf
IRFS4615TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4310TRLPBF irfs4310pbf.pdf
IRFS4310TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Polarisation: unipolar
Case: D2PAK
Produkt ist nicht verfügbar
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IRFS52N15DTRRP IRFS52N15DTRRP.pdf
IRFS52N15DTRRP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4020TRLPBF IRFS4020TRLPBF.pdf
IRFS4020TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4229TRLPBF irfs4229pbf.pdf
IRFS4229TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3307ZTRLPBF IRFS3307ZTRLPBF.pdf
IRFS3307ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRL7PP irfs3006-7ppbf.pdf
IRFS3006TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRLPBF irfs3107-7ppbf.pdf
IRFS3107TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFSL3206PBF irfs3206pbf.pdf
IRFSL3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFSL4310ZPBF irfb4310zpbf.pdf
IRFSL4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFSL7430PBF IRFSL7430PBF.pdf
IRFSL7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7730TRL7PP infineon-irfs7730-7p-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3004TRL7PP irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFSL4127PBF irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: TO262
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS23N20DTRLP IRFS23N20DTRLP.pdf
IRFS23N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3004TRLPBF irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRLPBF irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRL7PP irfs3107-7ppbf.pdf
IRFS3107TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3607TRLPBF irfs3607pbf.pdf
IRFS3607TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3806TRLPBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS38N20DTRLP irfs38n20dpbf.pdf
IRFS38N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2156STRPBF ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Produkt ist nicht verfügbar
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IRFR4105TRPBF irfr4105pbf.pdf
IRFR4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR4105ZTRL auirfr4105.pdf
AUIRFR4105ZTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3805PBF irf3805.pdf
IRF3805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Gate charge: 0.19µC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3315STRLPBF irf3315spbf.pdf
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF IRF3610STRLPBF.pdf
IRF3610STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Produkt ist nicht verfügbar
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IRF3805STRL-7PP irf3805s-7ppbf.pdf
IRF3805STRL-7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IPD80R900P7ATMA1 IPD80R900P7.pdf
IPD80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 15nC
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
64+1.13 EUR
74+0.97 EUR
89+0.81 EUR
100+0.77 EUR
500+0.71 EUR
Mindestbestellmenge: 42
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IPU80R900P7AKMA1 IPU80R900P7.pdf
IPU80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
65+1.11 EUR
79+0.92 EUR
150+0.85 EUR
Mindestbestellmenge: 54
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IPS80R900P7AKMA1 infineon-ips80r900p7-datasheet-en.pdf
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 45W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Case: IPAK SL
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IRLB4030PBF irlb4030pbf.pdf
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 87nC
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
21+3.55 EUR
27+2.67 EUR
50+1.87 EUR
100+1.77 EUR
Mindestbestellmenge: 20
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IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
96+0.75 EUR
116+0.62 EUR
125+0.57 EUR
250+0.52 EUR
Mindestbestellmenge: 48
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IPP12CN10LGXKSA1 IPP12CN10LG-DTE.pdf
IPP12CN10LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008S.pdf
IRS2008SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
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IRS2005STRPBF infineon-irs2005s-m-datasheet-en.pdf
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF.pdf
IRS2007SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Produkt ist nicht verfügbar
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IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
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IRS2011STRPBF INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
Produkt ist nicht verfügbar
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
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IRS2093MTRPBF IRS2093MTRPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRS2005MTRPBF infineon-irs2005s-m-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.73 EUR
Mindestbestellmenge: 3000
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
85+0.84 EUR
Mindestbestellmenge: 72
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ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
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ICE2A180ZXKLA1 ICE2A265.pdf
ICE2A180ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
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IRFL024NTRPBF irfl024npbf.pdf
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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1ED020I12F2XUMA1 1ED020I12-F2.pdf
1ED020I12F2XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.79 EUR
18+4.1 EUR
20+3.76 EUR
25+3.42 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FA2XUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-20
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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