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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.56 EUR
19+3.88 EUR
24+3.02 EUR
Mindestbestellmenge: 16
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
Power: 1W
auf Bestellung 28 Stücke:
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28+2.56 EUR
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 120V
Power dissipation: 300W
auf Bestellung 192 Stücke:
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16+4.63 EUR
18+4.05 EUR
50+2.72 EUR
100+2.43 EUR
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
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39+1.83 EUR
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IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 INFINEON TECHNOLOGIES IPP114N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 11.4mΩ
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 120V
Power dissipation: 136W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
38+1.89 EUR
50+1.47 EUR
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES irfr4620pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 24A
Power dissipation: 144W
auf Bestellung 2151 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
40+1.83 EUR
47+1.53 EUR
53+1.36 EUR
100+1.2 EUR
250+1.06 EUR
500+0.97 EUR
1000+0.94 EUR
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IKP30N65H5XKSA1 IKP30N65H5XKSA1 INFINEON TECHNOLOGIES IKP30N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 214W
Technology: OptiMOS™ 3
On-state resistance: 4.2mΩ
Produkt ist nicht verfügbar
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IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Power: 625mW
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2896 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
782+0.092 EUR
955+0.075 EUR
1021+0.07 EUR
1071+0.067 EUR
1134+0.063 EUR
1174+0.061 EUR
Mindestbestellmenge: 625
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
848+0.084 EUR
997+0.072 EUR
1055+0.068 EUR
1139+0.063 EUR
Mindestbestellmenge: 625
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IPF042N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
355+0.2 EUR
483+0.15 EUR
551+0.13 EUR
644+0.11 EUR
727+0.098 EUR
1000+0.087 EUR
Mindestbestellmenge: 250
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SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
27+2.75 EUR
29+2.47 EUR
50+2.33 EUR
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SPI21N50C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 21A; 208W; I2PAK,TO262
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: I2PAK; TO262
Gate-source voltage: 20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 95nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
50+2.12 EUR
Mindestbestellmenge: 50
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BSS138IXTSA1 BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
715+0.1 EUR
923+0.078 EUR
1095+0.065 EUR
1185+0.06 EUR
Mindestbestellmenge: 250
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IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Technology: SIPMOS™
Produkt ist nicht verfügbar
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IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Gate charge: 33nC
On-state resistance: 15.9mΩ
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 30A
Drain-source voltage: 55V
Produkt ist nicht verfügbar
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IPD096N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Gate charge: 35nC
On-state resistance: 7.9mΩ
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 73A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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IRF640NSTRRPBF INFINEON TECHNOLOGIES irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 18A; 150W; D2PAK,TO263AB; 251ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Reverse recovery time: 251ns
Technology: HEXFET®
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.73 EUR
Mindestbestellmenge: 800
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BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Mounting: THT
Operating temperature: -40...175°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: tube
On-state resistance: 6.5mΩ
Number of channels: 1
Output current: 36A
Output voltage: 49V
Power dissipation: 300W
Technology: TEMPFET®
Case: PG-TO220-7-12
Kind of integrated circuit: low-side
Integrated circuit features: internal temperature sensor
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.35 EUR
10+7.51 EUR
11+6.65 EUR
Mindestbestellmenge: 9
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SPB20N60S5ATMA1 INFINEON TECHNOLOGIES SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: DPAK; TO252
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES irf1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.75 EUR
Mindestbestellmenge: 26
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CPXKSA1 INFINEON TECHNOLOGIES IPA50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
Mindestbestellmenge: 14
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SPW16N50C3FKSA1 INFINEON TECHNOLOGIES SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
Produkt ist nicht verfügbar
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SPP15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
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BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Application: automotive industry
Gate charge: 1nC
Produkt ist nicht verfügbar
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IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2907AE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
358+0.2 EUR
526+0.14 EUR
623+0.11 EUR
885+0.081 EUR
1007+0.071 EUR
Mindestbestellmenge: 250
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IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES irfp4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPP030N10N5AKSA1 IPP030N10N5AKSA1 INFINEON TECHNOLOGIES IPP030N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
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12+6.23 EUR
14+5.36 EUR
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
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IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES IPI024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
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IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES irlml2060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 620 Stücke:
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186+0.39 EUR
232+0.31 EUR
404+0.18 EUR
596+0.12 EUR
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BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES IPB073N15N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 INFINEON TECHNOLOGIES ICE1HS01G-1.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 50...609kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: for LCD displays; SMPS
Operating voltage: 10.2...18V DC
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 126 Stücke:
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES SPP04N80C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 229 Stücke:
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35+2.04 EUR
40+1.82 EUR
44+1.63 EUR
50+1.54 EUR
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SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Turn-off time: 440ns
Power dissipation: 197W
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™ RC
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Kind of package: tube
auf Bestellung 137 Stücke:
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19+3.88 EUR
22+3.26 EUR
28+2.65 EUR
30+2.46 EUR
31+2.35 EUR
120+2.3 EUR
Mindestbestellmenge: 19
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BSP149H6906XTSA1 BSP149H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Case: SOT223
Technology: SIPMOS®
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Manufacturer series: PVI-NPbF
Turn-off time: 220µs
Kind of output: photodiode
Produkt ist nicht verfügbar
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES BFN26.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Produkt ist nicht verfügbar
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IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES irg4ph20kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Power dissipation: 60W
Collector current: 11A
Collector-emitter voltage: 1.2kV
Kind of package: tube
Produkt ist nicht verfügbar
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AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES auirg4ph50s.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 99A
Gate-emitter voltage: ±20V
Gate charge: 227nC
Produkt ist nicht verfügbar
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BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Mounting: SMD
Type of integrated circuit: RF switch
Number of channels: 2
Supply voltage: 1.8...3.5V DC
Case: TSNP6
Bandwidth: 0.1...6GHz
Application: telecommunication
Output configuration: SPDT
Produkt ist nicht verfügbar
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IRF2805PBF IRF2805PBF INFINEON TECHNOLOGIES irf2805.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
59+1.23 EUR
61+1.17 EUR
64+1.13 EUR
500+1.06 EUR
Mindestbestellmenge: 32
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BAS7004E6327HTSA1 BAS7004E6327HTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
291+0.25 EUR
505+0.14 EUR
637+0.11 EUR
749+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 209
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES irfi3205.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 113.3nC
On-state resistance: 8mΩ
Gate-source voltage: ±20V
Power dissipation: 48W
Drain-source voltage: 55V
Drain current: 56A
auf Bestellung 30 Stücke:
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22+3.3 EUR
29+2.52 EUR
30+2.39 EUR
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IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
19+3.88 EUR
24+3.02 EUR
Mindestbestellmenge: 16
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IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
Power: 1W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
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IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 120V
Power dissipation: 300W
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.63 EUR
18+4.05 EUR
50+2.72 EUR
100+2.43 EUR
Mindestbestellmenge: 16
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IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.83 EUR
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IPP114N12N3GXKSA1 IPP114N12N3G-DTE.pdf
IPP114N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 11.4mΩ
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 120V
Power dissipation: 136W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
38+1.89 EUR
50+1.47 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4620TRLPBF irfr4620pbf.pdf
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 24A
Power dissipation: 144W
auf Bestellung 2151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
40+1.83 EUR
47+1.53 EUR
53+1.36 EUR
100+1.2 EUR
250+1.06 EUR
500+0.97 EUR
1000+0.94 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65H5XKSA1 IKP30N65H5-DTE.pdf
IKP30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 214W
Technology: OptiMOS™ 3
On-state resistance: 4.2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Power: 625mW
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
955+0.075 EUR
1021+0.07 EUR
1071+0.067 EUR
1134+0.063 EUR
1174+0.061 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAT5405WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
848+0.084 EUR
997+0.072 EUR
1055+0.068 EUR
1139+0.063 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7002VH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
355+0.2 EUR
483+0.15 EUR
551+0.13 EUR
644+0.11 EUR
727+0.098 EUR
1000+0.087 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
27+2.75 EUR
29+2.47 EUR
50+2.33 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
SPI21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 21A; 208W; I2PAK,TO262
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: I2PAK; TO262
Gate-source voltage: 20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 95nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.12 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
BSS138IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
715+0.1 EUR
923+0.078 EUR
1095+0.065 EUR
1185+0.06 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Technology: SIPMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Gate charge: 33nC
On-state resistance: 15.9mΩ
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 30A
Drain-source voltage: 55V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Gate charge: 35nC
On-state resistance: 7.9mΩ
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 73A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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IRF640NSTRRPBF irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 18A; 150W; D2PAK,TO263AB; 251ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Reverse recovery time: 251ns
Technology: HEXFET®
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.73 EUR
Mindestbestellmenge: 800
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BTS282ZE3230AKSA2 BTS282Z.pdf
BTS282ZE3230AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Mounting: THT
Operating temperature: -40...175°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: tube
On-state resistance: 6.5mΩ
Number of channels: 1
Output current: 36A
Output voltage: 49V
Power dissipation: 300W
Technology: TEMPFET®
Case: PG-TO220-7-12
Kind of integrated circuit: low-side
Integrated circuit features: internal temperature sensor
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.35 EUR
10+7.51 EUR
11+6.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60S5ATMA1 SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: DPAK; TO252
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NPBF irf1310n.pdf
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.75 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CP-DTE.pdf
IPA50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SPW16N50C3FKSA1 SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Application: automotive industry
Gate charge: 1nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327.pdf
SMBT2907AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
358+0.2 EUR
526+0.14 EUR
623+0.11 EUR
885+0.081 EUR
1007+0.071 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4110PBF irfp4110pbf.pdf
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 IPP030N10N5-DTE.pdf
IPP030N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3G-DTE.pdf
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPB024N10N5ATMA1 Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI024N06N3GXKSA1 IPI024N06N3G-DTE.pdf
IPI024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
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IRLML2060TRPBF irlml2060pbf.pdf
IRLML2060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
232+0.31 EUR
404+0.18 EUR
596+0.12 EUR
Mindestbestellmenge: 186
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BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 IPB073N15N5.pdf
IPB073N15N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 ICE1HS01G-1.pdf
ICE1HS01G1XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 50...609kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: for LCD displays; SMPS
Operating voltage: 10.2...18V DC
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817UE6327.pdf
BC817SUE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
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SPP04N80C3 SPP04N80C3.pdf
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.82 EUR
44+1.63 EUR
50+1.54 EUR
Mindestbestellmenge: 35
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Turn-off time: 440ns
Power dissipation: 197W
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™ RC
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Kind of package: tube
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
22+3.26 EUR
28+2.65 EUR
30+2.46 EUR
31+2.35 EUR
120+2.3 EUR
Mindestbestellmenge: 19
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BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Case: SOT223
Technology: SIPMOS®
Mounting: SMD
Drain-source voltage: 200V
Drain current: 0.53A
On-state resistance: 3.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 2.6A
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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PVI1050NSPBF Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Manufacturer series: PVI-NPbF
Turn-off time: 220µs
Kind of output: photodiode
Produkt ist nicht verfügbar
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IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BFN26E6327 BFN26.pdf
BFN26E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Produkt ist nicht verfügbar
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IRG4PH20KDPBF irg4ph20kdpbf.pdf
IRG4PH20KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Power dissipation: 60W
Collector current: 11A
Collector-emitter voltage: 1.2kV
Kind of package: tube
Produkt ist nicht verfügbar
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AUIRG4PH50S auirg4ph50s.pdf
AUIRG4PH50S
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 99A
Gate-emitter voltage: ±20V
Gate charge: 227nC
Produkt ist nicht verfügbar
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Mounting: SMD
Type of integrated circuit: RF switch
Number of channels: 2
Supply voltage: 1.8...3.5V DC
Case: TSNP6
Bandwidth: 0.1...6GHz
Application: telecommunication
Output configuration: SPDT
Produkt ist nicht verfügbar
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IRF2805PBF description irf2805.pdf
IRF2805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
59+1.23 EUR
61+1.17 EUR
64+1.13 EUR
500+1.06 EUR
Mindestbestellmenge: 32
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BAS7004E6327HTSA1 BAS7004E6327HTSA1.pdf
BAS7004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
291+0.25 EUR
505+0.14 EUR
637+0.11 EUR
749+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 209
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IRFI3205PBF description irfi3205.pdf
IRFI3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 113.3nC
On-state resistance: 8mΩ
Gate-source voltage: ±20V
Power dissipation: 48W
Drain-source voltage: 55V
Drain current: 56A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
29+2.52 EUR
30+2.39 EUR
Mindestbestellmenge: 22
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