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ICE3B1565JFKLA1 INFINEON TECHNOLOGIES Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W
Type of integrated circuit: PMIC
Frequency: 67kHz
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Power: 42W
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
1300+1.76 EUR
Mindestbestellmenge: 1300
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ICE3AR0680VJZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3AR0680VJZ-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141ffe31ad53057 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 800V; 82W
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Breakdown voltage: 800V
Power: 82W
auf Bestellung 1300 Stücke:
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1300+2.5 EUR
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ICE3BR0680JZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3BR0680JZ-DS-v02_01-en.pdf?fileId=db3a304329a0f6ee0129e8b5bf735b64 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; Ch: 1; DIP8; flyback; Uin: 10.5÷25V; Ubr: 800V; 82W
Type of integrated circuit: PMIC
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 800V
Power: 82W
auf Bestellung 1500 Stücke:
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1500+2.33 EUR
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ICE3RBR4765JGXUMA1 INFINEON TECHNOLOGIES Infineon-ICE3RBR4765JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf62dc7516 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W
Type of integrated circuit: PMIC
Frequency: 65kHz
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 650V
Power: 24W
auf Bestellung 25000 Stücke:
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2500+1.17 EUR
Mindestbestellmenge: 2500
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GS61008PMRXUSA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 65A; Idm: 140A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 140A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: tape
Kind of channel: enhancement
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GS66502BMRXUSA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 15A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 516mΩ
Mounting: SMD
Gate charge: 1.6nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GS0650306LLMRXUMA1 INFINEON TECHNOLOGIES Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 67A
Case: TOLL
Gate-source voltage: -10...7V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES IGOT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES IGT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
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IRF6218STRLPBF IRF6218STRLPBF INFINEON TECHNOLOGIES irf6218spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES IR38263M.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Topology: buck
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Case: PQFN5X7
Kind of package: reel; tape
Operating temperature: -40...125°C
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Frequency: 0.15...1.5MHz
Produkt ist nicht verfügbar
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IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES IKP08N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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FM25L16B-DG INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
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FM25L16B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFSL4410ZPBF IRFSL4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Kind of package: tube
Drain current: 97A
Power dissipation: 230W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: TO262
Produkt ist nicht verfügbar
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IR2125PBF IR2125PBF INFINEON TECHNOLOGIES ir2125.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 122 Stücke:
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19+3.79 EUR
21+3.42 EUR
25+2.89 EUR
27+2.67 EUR
50+2.57 EUR
100+2.49 EUR
Mindestbestellmenge: 19
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IR2121PBF IR2121PBF INFINEON TECHNOLOGIES ir2121.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 43 Stücke:
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22+3.29 EUR
24+3 EUR
28+2.57 EUR
Mindestbestellmenge: 22
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IR2125SPBF IR2125SPBF INFINEON TECHNOLOGIES IR2125SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1396 Stücke:
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26+2.76 EUR
28+2.65 EUR
45+2.53 EUR
90+2.42 EUR
270+2.36 EUR
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IR2128STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IPB160N04S4H1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Produkt ist nicht verfügbar
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IRS2304SPBF IRS2304SPBF INFINEON TECHNOLOGIES irs2304spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 80 Stücke:
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27+2.72 EUR
36+1.99 EUR
47+1.53 EUR
Mindestbestellmenge: 27
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BTS4141N BTS4141N INFINEON TECHNOLOGIES BTS4141N.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
auf Bestellung 2539 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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BTS4880R BTS4880R INFINEON TECHNOLOGIES BTS4880R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
auf Bestellung 763 Stücke:
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6+14.1 EUR
10+11.18 EUR
100+9.19 EUR
500+8.84 EUR
Mindestbestellmenge: 6
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BTS452T BTS452T INFINEON TECHNOLOGIES BTS452T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES BTS4175SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BTS436L2GATMA1 INFINEON TECHNOLOGIES Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR1205TRPBF IRFR1205TRPBF INFINEON TECHNOLOGIES irfr1205pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Power dissipation: 107W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2001 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
118+0.61 EUR
142+0.51 EUR
152+0.47 EUR
500+0.41 EUR
1000+0.39 EUR
2000+0.37 EUR
Mindestbestellmenge: 84
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IRFR120ZTRPBF IRFR120ZTRPBF INFINEON TECHNOLOGIES irfr120zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BGS14MPA9E6327XTSA1 INFINEON TECHNOLOGIES BGS14MPA9E6327.pdf Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
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IRS21867STRPBF IRS21867STRPBF INFINEON TECHNOLOGIES IRS21867SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -4...4A
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 1543 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
Mindestbestellmenge: 35
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IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -4...4A
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 1327 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
49+1.49 EUR
50+1.43 EUR
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IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES irs2110.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 59 Stücke:
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18+4.05 EUR
23+3.16 EUR
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
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IRS2109STRPBF INFINEON TECHNOLOGIES IRSDS11365-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS21864STRPBF INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS21271STRPBF INFINEON TECHNOLOGIES IRS212XXSTRPBf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.47 EUR
Mindestbestellmenge: 2500
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IRS2117STRPBF INFINEON TECHNOLOGIES irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; SOIC8; 290mA; Ch: 1; MOSFET; Iout max: 290mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: SOIC8
Output current: 0.29A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 0.625W
Pulse fall time: 35ns
Impulse rise time: 75ns
Integrated circuit features: MOSFET
Maximum output current: 290mA
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.58 EUR
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IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
98+0.73 EUR
133+0.54 EUR
150+0.48 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 73
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IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES IRF7201TRPBF.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES irf7105pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
103+0.7 EUR
147+0.49 EUR
173+0.41 EUR
250+0.33 EUR
500+0.29 EUR
1000+0.27 EUR
2000+0.26 EUR
Mindestbestellmenge: 80
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES irf7101pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES irf7104pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
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IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 3606 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
57+1.26 EUR
65+1.12 EUR
69+1.04 EUR
71+1.02 EUR
Mindestbestellmenge: 51
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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 1379 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
48+1.5 EUR
53+1.37 EUR
55+1.3 EUR
100+1.23 EUR
250+1.19 EUR
Mindestbestellmenge: 36
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IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Kind of package: tube
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -250...120mA
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
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IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES TLE6232GP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Kind of integrated circuit: low-side
Kind of output: N-Channel
Technology: FLEX
Number of channels: 6
Produkt ist nicht verfügbar
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CY8C4245AXI-483 CY8C4245AXI-483 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4125AXI-483 CY8C4125AXI-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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ICE3B1565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 67kHz; DIP8; flyback; 650V; 42W
Type of integrated circuit: PMIC
Frequency: 67kHz
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
Power: 42W
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1300+1.76 EUR
Mindestbestellmenge: 1300
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ICE3AR0680VJZXKLA1 Infineon-ICE3AR0680VJZ-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141ffe31ad53057
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 800V; 82W
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Breakdown voltage: 800V
Power: 82W
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1300+2.5 EUR
Mindestbestellmenge: 1300
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ICE3BR0680JZXKLA1 Infineon-ICE3BR0680JZ-DS-v02_01-en.pdf?fileId=db3a304329a0f6ee0129e8b5bf735b64
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; Ch: 1; DIP8; flyback; Uin: 10.5÷25V; Ubr: 800V; 82W
Type of integrated circuit: PMIC
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 800V
Power: 82W
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+2.33 EUR
Mindestbestellmenge: 1500
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ICE3RBR4765JGXUMA1 Infineon-ICE3RBR4765JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf62dc7516
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 65kHz; PG-DSO-12; flyback; Uin: 10.5÷25V; Ubr: 650V; 24W
Type of integrated circuit: PMIC
Frequency: 65kHz
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 10.5...25V
Breakdown voltage: 650V
Power: 24W
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
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GS61008PMRXUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 65A; Idm: 140A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 140A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GS66502BMRXUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 15A
Case: GaNPX
Gate-source voltage: -10...7V
On-state resistance: 516mΩ
Mounting: SMD
Gate charge: 1.6nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GS0650306LLMRXUMA1 Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 67A
Case: TOLL
Gate-source voltage: -10...7V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 IGOT60R070D1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1.pdf
IGT60R070D1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
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IRF6218STRLPBF irf6218spbf.pdf
IRF6218STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR38263MTRPBFAUMA1 IR38263M.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Topology: buck
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Case: PQFN5X7
Kind of package: reel; tape
Operating temperature: -40...125°C
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Frequency: 0.15...1.5MHz
Produkt ist nicht verfügbar
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IKP08N65H5XKSA1 IKP08N65H5-DTE.pdf
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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FM25L16B-DG Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM25L16B-DGTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFSL4410ZPBF irfb4410zpbf.pdf
IRFSL4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Kind of package: tube
Drain current: 97A
Power dissipation: 230W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: TO262
Produkt ist nicht verfügbar
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IR2125PBF ir2125.pdf
IR2125PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
21+3.42 EUR
25+2.89 EUR
27+2.67 EUR
50+2.57 EUR
100+2.49 EUR
Mindestbestellmenge: 19
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IR2121PBF ir2121.pdf
IR2121PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
24+3 EUR
28+2.57 EUR
Mindestbestellmenge: 22
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IR2125SPBF IR2125SPBF.pdf
IR2125SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
28+2.65 EUR
45+2.53 EUR
90+2.42 EUR
270+2.36 EUR
Mindestbestellmenge: 26
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IR2128STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2304SPBF irs2304spbf.pdf
IRS2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
36+1.99 EUR
47+1.53 EUR
Mindestbestellmenge: 27
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BTS4141N description BTS4141N.pdf
BTS4141N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
auf Bestellung 2539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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BTS4880R BTS4880R.pdf
BTS4880R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.1 EUR
10+11.18 EUR
100+9.19 EUR
500+8.84 EUR
Mindestbestellmenge: 6
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BTS452T BTS452T.pdf
BTS452T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BTS4175SGA BTS4175SGA.pdf
BTS4175SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BTS436L2GATMA1 Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR1205TRPBF irfr1205pbf.pdf
IRFR1205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Power dissipation: 107W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2001 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
118+0.61 EUR
142+0.51 EUR
152+0.47 EUR
500+0.41 EUR
1000+0.39 EUR
2000+0.37 EUR
Mindestbestellmenge: 84
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IRFR120ZTRPBF irfr120zpbf.pdf
IRFR120ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BGS14MPA9E6327XTSA1 BGS14MPA9E6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
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IRS21867STRPBF IRS21867SPBF.pdf
IRS21867STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -4...4A
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 1543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
Mindestbestellmenge: 35
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IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -4...4A
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Type of integrated circuit: driver
Mounting: SMD
auf Bestellung 1327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
49+1.49 EUR
50+1.43 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRS2110SPBF description irs2110.pdf
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.05 EUR
23+3.16 EUR
Mindestbestellmenge: 18
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IRS21864SPBF irs2186pbf.pdf
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IRS2118PBF irs2117pbf.pdf
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
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IRS2109STRPBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS21864STRPBF infineon-2ed2182-4-s06f-j-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
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IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS2118SPBF irs2117pbf.pdf
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS21271STRPBF IRS212XXSTRPBf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.47 EUR
Mindestbestellmenge: 2500
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IRS2117STRPBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; SOIC8; 290mA; Ch: 1; MOSFET; Iout max: 290mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: SOIC8
Output current: 0.29A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 0.625W
Pulse fall time: 35ns
Impulse rise time: 75ns
Integrated circuit features: MOSFET
Maximum output current: 290mA
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.58 EUR
Mindestbestellmenge: 2500
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IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
98+0.73 EUR
133+0.54 EUR
150+0.48 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 73
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IRF7201TRPBF description IRF7201TRPBF.pdf
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7105TRPBF description irf7105pbf.pdf
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
103+0.7 EUR
147+0.49 EUR
173+0.41 EUR
250+0.33 EUR
500+0.29 EUR
1000+0.27 EUR
2000+0.26 EUR
Mindestbestellmenge: 80
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IRF7101TRPBF irf7101pbf.pdf
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7104TRPBF description irf7104pbf.pdf
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC858CE6327 BC858CE6327.pdf
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 3606 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
65+1.12 EUR
69+1.04 EUR
71+1.02 EUR
Mindestbestellmenge: 51
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IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 1379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
48+1.5 EUR
53+1.37 EUR
55+1.3 EUR
100+1.23 EUR
250+1.19 EUR
Mindestbestellmenge: 36
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IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Kind of package: tube
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -250...120mA
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6232GPAUMA2 TLE6232GP.pdf
TLE6232GPAUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Kind of integrated circuit: low-side
Kind of output: N-Channel
Technology: FLEX
Number of channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245AXI-483 CY8C4244LQI-443.pdf
CY8C4245AXI-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125AXI-483 CY8C4124AXI-443.pdf
CY8C4125AXI-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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