Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118571) > Seite 1959 nach 1977
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IRFH4210DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 255A Power dissipation: 3.5W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Trade name: FastIRFET |
Produkt ist nicht verfügbar |
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IRFH4251DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 31W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Trade name: FastIRFET |
Produkt ist nicht verfügbar |
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IRFH5053TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.3A Power dissipation: 3.1W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5210TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5215TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 5A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5301TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5302DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH6200TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 45A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| IRFH7004TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 164A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement On-state resistance: 1.4mΩ Gate-source voltage: ±20V Pulsed drain current: 1247A |
Produkt ist nicht verfügbar |
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IRFH7446TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 117A Power dissipation: 78W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 65nC On-state resistance: 3.3mΩ Trade name: StrongIRFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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| IRFH7545TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 54A Power dissipation: 83W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement On-state resistance: 5.2mΩ Gate-source voltage: ±20V Pulsed drain current: 340A |
Produkt ist nicht verfügbar |
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IRFH7921TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 3.1W Case: PQFN8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH7934TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 3.1W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8303TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 280A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8307TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8311TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8316TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8321TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 3.4W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8325TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| ISZ0702NLSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 86A Power dissipation: 65W Case: PG-TDSON-8 FL On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| ISC0702NLSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 135A Power dissipation: 100W Case: PG-TDSON-8 On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BSF450NE7NH3XUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 15A Power dissipation: 18W Case: CanPAK™ S; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IRFIZ44NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 28A Power dissipation: 38W Case: TO220FP Mounting: THT Kind of channel: enhancement Kind of package: tube Gate-source voltage: ±20V Gate charge: 43.3nC On-state resistance: 24mΩ |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP Kind of package: tube On-state resistance: 9.3mΩ Gate-source voltage: ±30V Drain current: 30A Power dissipation: 47W Drain-source voltage: 100V Type of transistor: N-MOSFET Mounting: THT Technology: HEXFET® Kind of channel: enhancement Polarisation: unipolar Gate charge: 81nC Case: TO220FP |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4321PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 34A Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 46W Technology: HEXFET® |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 19A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IRFI4212H-117PXKMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Power dissipation: 7W Case: TO220-5 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Half-Bridge Power MOSFET Pulsed drain current: 44A |
Produkt ist nicht verfügbar |
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IPB180P04P403ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -180A Power dissipation: 150W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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ICL5101XUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time Type of integrated circuit: driver Topology: resonant LLC Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-16-23 Output current: 0.7A Number of channels: 1 Integrated circuit features: dead time Mounting: SMD Operating voltage: 8.6...17.5V DC |
Produkt ist nicht verfügbar |
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| S6E2C5AJ0AGB1000A | INFINEON TECHNOLOGIES |
Category: ST microcontrollersDescription: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit |
auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
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| S6E2CCAJ0AGB1000A | INFINEON TECHNOLOGIES |
Category: ST microcontrollersDescription: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit |
auf Bestellung 3878 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF630NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 82W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Kind of channel: enhancement Technology: HEXFET® Gate charge: 23.3nC Kind of package: tube |
Produkt ist nicht verfügbar |
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IRF630NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 82W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
Produkt ist nicht verfügbar |
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| ITS6080SEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14 Type of integrated circuit: power switch Mounting: SMD On-state resistance: 80mΩ Output current: 8A Active logical level: high Kind of output: N-Channel Case: PG-TSDSO-14 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Case: SOT223 Mounting: SMD Power dissipation: 2.1W Gate-source voltage: ±16V Drain-source voltage: 55V Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Kind of package: reel Polarisation: unipolar Gate charge: 10.4nC On-state resistance: 65mΩ Drain current: 4.4A |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF300P226 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 53A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 191nC |
Produkt ist nicht verfügbar |
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IRF300P227 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 35A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 107nC |
Produkt ist nicht verfügbar |
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IRFP054NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 72A Power dissipation: 130W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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| CY7C68013A-56PVXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56 Type of integrated circuit: USB controller Interface: 8bit; 16bit; I2C; USB 2.0 Supply voltage: 3...3.6V DC Case: SO56 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: 0...70°C Number of inputs/outputs: 24 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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| CY7C68013A-56PVXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56 Type of integrated circuit: USB controller Interface: 8/16bit BUS; GPIO; I2C; UART Memory: 16kB FLASH Supply voltage: 3...3.6V DC Case: SO56 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: 0...70°C Number of inputs/outputs: 24 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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CY8C5888AXI-LP096 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH Operating temperature: -40...85°C Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; SPI; UART; USB Case: TQFP100 Mounting: SMD Integrated circuit features: watchdog Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 72 Memory: 64kB SRAM; 256kB FLASH Clock frequency: 80MHz Kind of core: 32-bit |
Produkt ist nicht verfügbar |
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| CY8C5888LTI-LP097 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; SPI; UART; USB Integrated circuit features: watchdog Mounting: SMD Case: QFN68 Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 48 Memory: 64kB SRAM; 256kB FLASH Kind of core: 32-bit Clock frequency: 80MHz |
Produkt ist nicht verfügbar |
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BSC032N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Technology: OptiMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 52W Drain current: 83A |
auf Bestellung 1139 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2302STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -0.35...0.2A Power: 625mW Number of channels: 2 Supply voltage: 5...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
Produkt ist nicht verfügbar |
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IR2308SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -0.35...0.2A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
Produkt ist nicht verfügbar |
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| IR2304STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 0.13A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
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| IR2301STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 0.2A Number of channels: 2 Mounting: SMD Operating temperature: -40...150°C Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
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| S29AL008J55TFIR23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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CY7C68013A-100AXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100 Type of integrated circuit: USB controller Interface: 8bit; 16bit; I2C; USB 2.0 Supply voltage: 3...3.6V DC Case: TQFP100 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: 0...70°C Number of inputs/outputs: 40 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| CY7C68013A-128AXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128 Type of integrated circuit: USB controller Interface: 8bit; 16bit; I2C; USB 2.0 Supply voltage: 3...3.6V DC Case: TQFP128 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: -40...85°C Number of inputs/outputs: 40 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| CY7C68013A-56LTXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56 Type of integrated circuit: USB controller Interface: 8bit; 16bit; I2C; USB 2.0 Supply voltage: 3...3.6V DC Case: QFN56 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: 0...70°C Number of inputs/outputs: 24 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| CY7C68013A-56LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56 Type of integrated circuit: USB controller Interface: 8bit; 16bit; I2C; USB 2.0 Supply voltage: 3...3.6V DC Case: QFN56 Integrated circuit features: USB peripheral driver Mounting: SMD Operating temperature: -40...85°C Number of inputs/outputs: 24 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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ICE3BR0665JXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 67kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...80% Application: SMPS Operating voltage: 10.5...25V DC Output current: 4.8A |
auf Bestellung 178 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3BR1765JXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Frequency: 65kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Application: SMPS Operating voltage: 10.5...25V DC |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3A2065ELJFKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 57/28W Application: SMPS Operating voltage: 10.5...26V DC Output current: 10.3A |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3AR0680JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 20A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...75% Power: 82/52W Application: SMPS Operating voltage: 10.5...25V DC |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3RBR0665JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 71/47W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ICE3RBR1765JZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 44/29W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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ICE3PCS02GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 21...100kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: boost Input voltage: 90...270V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFH4210DTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH4251DTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5053TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5210TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5215TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5301TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5302DTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH6200TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7004TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7446TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 65nC
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 65nC
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7545TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7921TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7934TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8303TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8307TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8311TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8316TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8321TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH8325TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ISZ0702NLSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 65W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 65W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ISC0702NLSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSF450NE7NH3XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFIZ44NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 54+ | 1.34 EUR |
| 67+ | 1.07 EUR |
| IRFI4410ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Kind of package: tube
On-state resistance: 9.3mΩ
Gate-source voltage: ±30V
Drain current: 30A
Power dissipation: 47W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 81nC
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Kind of package: tube
On-state resistance: 9.3mΩ
Gate-source voltage: ±30V
Drain current: 30A
Power dissipation: 47W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 81nC
Case: TO220FP
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.59 EUR |
| 33+ | 2.2 EUR |
| 50+ | 2.07 EUR |
| IRFI4321PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 46W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 46W
Technology: HEXFET®
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 33+ | 2.22 EUR |
| IRFI1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| IRFI4229PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFI4212H-117PXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
Pulsed drain current: 44A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
Pulsed drain current: 44A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IPB180P04P403ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -180A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -180A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ICL5101XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S6E2C5AJ0AGB1000A |
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Hersteller: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 21.59 EUR |
| S6E2CCAJ0AGB1000A |
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Hersteller: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
auf Bestellung 3878 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 25.37 EUR |
| IRF630NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF630NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ITS6080SEPDXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.25 EUR |
| IRLL024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 2.1W
Gate-source voltage: ±16V
Drain-source voltage: 55V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 10.4nC
On-state resistance: 65mΩ
Drain current: 4.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 2.1W
Gate-source voltage: ±16V
Drain-source voltage: 55V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 10.4nC
On-state resistance: 65mΩ
Drain current: 4.4A
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 104+ | 0.69 EUR |
| 146+ | 0.49 EUR |
| 168+ | 0.43 EUR |
| IRF300P226 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF300P227 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP054NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 37+ | 1.94 EUR |
| 43+ | 1.7 EUR |
| CY7C68013A-56PVXC | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C68013A-56PVXCT |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56
Type of integrated circuit: USB controller
Interface: 8/16bit BUS; GPIO; I2C; UART
Memory: 16kB FLASH
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56
Type of integrated circuit: USB controller
Interface: 8/16bit BUS; GPIO; I2C; UART
Memory: 16kB FLASH
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C5888AXI-LP096 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Case: TQFP100
Mounting: SMD
Integrated circuit features: watchdog
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 80MHz
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Case: TQFP100
Mounting: SMD
Integrated circuit features: watchdog
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 80MHz
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C5888LTI-LP097 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 64kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 80MHz
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 64kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 80MHz
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| BSC032N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 83A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 83A
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 60+ | 1.2 EUR |
| 69+ | 1.04 EUR |
| 79+ | 0.92 EUR |
| IR2302STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
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| IR2308SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
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| IR2304STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
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| IR2301STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
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| S29AL008J55TFIR23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| CY7C68013A-100AXC | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP100
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 40
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP100
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP100
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 40
Kind of core: 8-bit
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| CY7C68013A-128AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP128
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 40
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; TQFP128
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: TQFP128
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 40
Kind of core: 8-bit
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| CY7C68013A-56LTXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| CY7C68013A-56LTXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; QFN56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: QFN56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| ICE3BR0665JXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 29+ | 2.5 EUR |
| 33+ | 2.23 EUR |
| ICE3BR1765JXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.14 EUR |
| 37+ | 1.94 EUR |
| 39+ | 1.86 EUR |
| ICE3A2065ELJFKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| ICE3AR0680JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.53 EUR |
| ICE3RBR0665JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3RBR1765JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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| ICE3PCS02GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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