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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 9 Stücke:
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9+7.95 EUR
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 323 Stücke:
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117+0.61 EUR
131+0.55 EUR
136+0.53 EUR
142+0.5 EUR
145+0.49 EUR
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TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 2399 Stücke:
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60+1.2 EUR
82+0.88 EUR
115+0.62 EUR
1000+0.5 EUR
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TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 448 Stücke:
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43+1.7 EUR
46+1.57 EUR
69+1.04 EUR
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TLE4946KHTSA1 INFINEON TECHNOLOGIES TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
Produkt ist nicht verfügbar
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.11A
Max. forward voltage: 0.41V
Semiconductor structure: single diode
Max. off-state voltage: 4V
Case: SOD323
Power dissipation: 0.1W
auf Bestellung 2287 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
118+0.61 EUR
139+0.51 EUR
210+0.34 EUR
247+0.29 EUR
500+0.23 EUR
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BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 INFINEON TECHNOLOGIES BTH500301LUAAUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 22.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 7mΩ
Kind of package: reel; tape
Supply voltage: 12...54V DC
Technology: PROFET™
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 INFINEON TECHNOLOGIES Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324 Category: Power switches - integrated circuits
Description: IC: power switch; 25A; N-Channel; SMD; PG-HSOF-8; -40÷150°C
Type of integrated circuit: power switch
Output current: 25A
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 3Ω
Operating temperature: -40...150°C
Active logical level: high
Produkt ist nicht verfügbar
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ICE5AR4780BZSXKLA1
+1
 		ICE5AR4780BZSXKLA1 INFINEON TECHNOLOGIES ICE5ARxxxxBZS.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES irlr3103pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS50452EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W
Operating temperature: -40...150°C
Kind of output: N-Channel
Case: PG-DSO-14-40 EP
Type of integrated circuit: power switch
Mounting: SMD
Integrated circuit features: thermal protection
On-state resistance: 85mΩ
Number of channels: 2
Power dissipation: 2W
Output current: 4A
Supply voltage: 5...28V DC
Application: automotive industry
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Power dissipation: 375W
Gate charge: 305nC
On-state resistance: 0.55mΩ
Produkt ist nicht verfügbar
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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 788 Stücke:
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22+3.4 EUR
30+2.43 EUR
35+2.1 EUR
100+1.77 EUR
Mindestbestellmenge: 22
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IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES IKW30N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.32 EUR
18+4.1 EUR
23+3.25 EUR
26+2.83 EUR
30+2.63 EUR
60+2.62 EUR
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES ikw30n65h5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
auf Bestellung 31 Stücke:
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18+4.05 EUR
30+3.52 EUR
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IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
auf Bestellung 19 Stücke:
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18+4.08 EUR
19+3.76 EUR
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
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IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES IHW30N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES IKB30N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES IGP30N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES IKB30N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES irf7413zpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
auf Bestellung 126 Stücke:
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67+1.07 EUR
119+0.6 EUR
126+0.57 EUR
Mindestbestellmenge: 67
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IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES BFR106E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
auf Bestellung 1297 Stücke:
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218+0.33 EUR
272+0.26 EUR
309+0.23 EUR
363+0.2 EUR
404+0.18 EUR
439+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 218
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES IPB031NE7N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4510PBF IRFB4510PBF INFINEON TECHNOLOGIES IRFB4510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
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45+1.62 EUR
57+1.26 EUR
61+1.18 EUR
67+1.07 EUR
73+0.99 EUR
100+0.92 EUR
Mindestbestellmenge: 45
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IRF5803TRPBF IRF5803TRPBF INFINEON TECHNOLOGIES irf5803pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3511 Stücke:
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125+0.57 EUR
157+0.46 EUR
232+0.31 EUR
268+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
1500+0.16 EUR
Mindestbestellmenge: 125
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BAS4004E6433HTMA1 INFINEON TECHNOLOGIES INFNS19700-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BSP62H6327XTSA1 INFINEON TECHNOLOGIES bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Current gain: 2k
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BFR92PE6327 BFR92PE6327 INFINEON TECHNOLOGIES BFR92p.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 3146 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
275+0.26 EUR
315+0.23 EUR
365+0.2 EUR
404+0.18 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218
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IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES IRFB7540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
94+0.77 EUR
106+0.68 EUR
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IRFR540ZTRLPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFR7540TRPBF IRFR7540TRPBF INFINEON TECHNOLOGIES IRFR7540TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFS7540TRLPBF IRFS7540TRLPBF INFINEON TECHNOLOGIES irfs7540pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES auirf7640s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTT62001ENAXUMA1 INFINEON TECHNOLOGIES Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TDSO-8-31
Technology: PROFET™+ 24V
Mounting: SMD
On-state resistance: 0.2Ω
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side
Supply voltage: 8...36V DC
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTT62001ENAXUMA1 INFINEON TECHNOLOGIES Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES BSC110N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IRFB4310PBF IRFB4310PBF INFINEON TECHNOLOGIES irfs4310.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
40+1.82 EUR
50+1.52 EUR
Mindestbestellmenge: 21
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AUIRFN8405TR INFINEON TECHNOLOGIES auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 95A; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Technology: HEXFET®
Application: automotive industry
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Power dissipation: 166W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-HSOF-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 150A
Produkt ist nicht verfügbar
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BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES BTS5030-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
Mindestbestellmenge: 22
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IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES irfb4019pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
52+1.4 EUR
59+1.22 EUR
72+1 EUR
80+0.9 EUR
100+0.87 EUR
500+0.83 EUR
Mindestbestellmenge: 40
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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES BFP193E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1598 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Kind of package: tube
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 97A
Power dissipation: 230W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 83nC
Case: TO220AB
auf Bestellung 1710 Stücke:
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35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
Mindestbestellmenge: 35
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES irfs4610.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
Mindestbestellmenge: 28
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IRFB38N20DPBF IRFB38N20DPBF INFINEON TECHNOLOGIES irfs38n20d.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
29+2.5 EUR
33+2.23 EUR
50+1.73 EUR
Mindestbestellmenge: 24
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES irfs52n15d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
Mindestbestellmenge: 29
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IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES irfb5620pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
Mindestbestellmenge: 36
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IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES irfs3307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
28+2.56 EUR
30+2.43 EUR
36+2 EUR
42+1.73 EUR
50+1.43 EUR
100+1.26 EUR
Mindestbestellmenge: 27
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES IRFB7730PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.87 EUR
34+2.16 EUR
50+1.94 EUR
100+1.79 EUR
Mindestbestellmenge: 25
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES irfb4332pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES irfs7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
Mindestbestellmenge: 27
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES irfs3307zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
Mindestbestellmenge: 26
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
131+0.55 EUR
136+0.53 EUR
142+0.5 EUR
145+0.49 EUR
Mindestbestellmenge: 117
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TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
82+0.88 EUR
115+0.62 EUR
1000+0.5 EUR
Mindestbestellmenge: 60
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TLE4945L TLE49x5L.PDF
TLE4945L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: bipolar
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
46+1.57 EUR
69+1.04 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
Produkt ist nicht verfügbar
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1.pdf
BAT1503WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.11A
Max. forward voltage: 0.41V
Semiconductor structure: single diode
Max. off-state voltage: 4V
Case: SOD323
Power dissipation: 0.1W
auf Bestellung 2287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
118+0.61 EUR
139+0.51 EUR
210+0.34 EUR
247+0.29 EUR
500+0.23 EUR
Mindestbestellmenge: 93
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BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 BTH500301LUAAUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 22.5A; Ch: 1; N-Channel; SMD; PG-HSOF-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 22.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 7mΩ
Kind of package: reel; tape
Supply voltage: 12...54V DC
Technology: PROFET™
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 25A; N-Channel; SMD; PG-HSOF-8; -40÷150°C
Type of integrated circuit: power switch
Output current: 25A
Kind of output: N-Channel
Mounting: SMD
Case: PG-HSOF-8
On-state resistance: 3Ω
Operating temperature: -40...150°C
Active logical level: high
Produkt ist nicht verfügbar
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ICE5AR4780BZSXKLA1 ICE5ARxxxxBZS.pdf
ICE5AR4780BZSXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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IRLR3103TRPBF irlr3103pbf.pdf
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS50452EKAXUMA1 Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; -40÷150°C; 2W
Operating temperature: -40...150°C
Kind of output: N-Channel
Case: PG-DSO-14-40 EP
Type of integrated circuit: power switch
Mounting: SMD
Integrated circuit features: thermal protection
On-state resistance: 85mΩ
Number of channels: 2
Power dissipation: 2W
Output current: 4A
Supply voltage: 5...28V DC
Application: automotive industry
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Power dissipation: 375W
Gate charge: 305nC
On-state resistance: 0.55mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
30+2.43 EUR
35+2.1 EUR
100+1.77 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65EL5XKSA1 IKW30N65EL5.pdf
IKW30N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
18+4.1 EUR
23+3.25 EUR
26+2.83 EUR
30+2.63 EUR
60+2.62 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65H5XKSA1 ikw30n65h5.pdf
IKW30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.05 EUR
30+3.52 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5.pdf
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
19+3.76 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 IKW30N65WR5.pdf
IKW30N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N65R5XKSA1 IHW30N65R5.pdf
IHW30N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65ES5ATMA1 IKB30N65ES5.pdf
IKB30N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N65F5XKSA1 IGP30N65F5-DTE.pdf
IGP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKB30N65EH5ATMA1 IKB30N65EH5.pdf
IKB30N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IRF7413ZTRPBF description irf7413zpbf.pdf
IRF7413ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
119+0.6 EUR
126+0.57 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR106E6327 BFR106E6327-dte.pdf
BFR106E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
auf Bestellung 1297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
309+0.23 EUR
363+0.2 EUR
404+0.18 EUR
439+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
IPB031NE7N3GATMA1 IPB031NE7N3G-DTE.pdf
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4510PBF IRFB4510PBF.pdf
IRFB4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
57+1.26 EUR
61+1.18 EUR
67+1.07 EUR
73+0.99 EUR
100+0.92 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRF5803TRPBF irf5803pbf.pdf
IRF5803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3511 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
157+0.46 EUR
232+0.31 EUR
268+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
1500+0.16 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP62H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Current gain: 2k
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BFR92PE6327 BFR92p.pdf
BFR92PE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 3146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
275+0.26 EUR
315+0.23 EUR
365+0.2 EUR
404+0.18 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7540PBF IRFB7540PBF.pdf
IRFB7540PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
94+0.77 EUR
106+0.68 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7540TRPBF IRFR7540TRPBF.pdf
IRFR7540TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7540TRLPBF irfs7540pbf.pdf
IRFS7540TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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AUIRF7640S2TR auirf7640s2.pdf
AUIRF7640S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TDSO-8-31
Technology: PROFET™+ 24V
Mounting: SMD
On-state resistance: 0.2Ω
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side
Supply voltage: 8...36V DC
Kind of output: N-Channel
Produkt ist nicht verfügbar
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BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 BSC110N06NS3G-DTE.pdf
BSC110N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IRFB4310PBF irfs4310.pdf
IRFB4310PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
40+1.82 EUR
50+1.52 EUR
Mindestbestellmenge: 21
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AUIRFN8405TR auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 95A; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Technology: HEXFET®
Application: automotive industry
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Power dissipation: 166W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-HSOF-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 150A
Produkt ist nicht verfügbar
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BTS5030-1EJA BTS5030-1EJA.pdf
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
Mindestbestellmenge: 22
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IRFB4019PBF description irfb4019pbf.pdf
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
52+1.4 EUR
59+1.22 EUR
72+1 EUR
80+0.9 EUR
100+0.87 EUR
500+0.83 EUR
Mindestbestellmenge: 40
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BFP193E6327 BFP193E6327-dte.pdf
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193
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IRFB4410ZPBF description irfb4410zpbf.pdf
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Kind of package: tube
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain current: 97A
Power dissipation: 230W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 83nC
Case: TO220AB
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
Mindestbestellmenge: 35
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IRFB4610PBF description irfs4610.pdf
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
Mindestbestellmenge: 28
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IRFB38N20DPBF description irfs38n20d.pdf
IRFB38N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
29+2.5 EUR
33+2.23 EUR
50+1.73 EUR
Mindestbestellmenge: 24
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IRFB52N15DPBF irfs52n15d.pdf
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
Mindestbestellmenge: 29
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IRFB5620PBF irfb5620pbf.pdf
IRFB5620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
Mindestbestellmenge: 36
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IRFB3307PBF irfs3307.pdf
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
28+2.56 EUR
30+2.43 EUR
36+2 EUR
42+1.73 EUR
50+1.43 EUR
100+1.26 EUR
Mindestbestellmenge: 27
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IRFB7730PBF IRFB7730PBF.pdf
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
34+2.16 EUR
50+1.94 EUR
100+1.79 EUR
Mindestbestellmenge: 25
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IRFB4332PbF irfb4332pbf.pdf
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 26
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IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
Mindestbestellmenge: 36
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IRFB7537PBF irfs7537pbf.pdf
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
Mindestbestellmenge: 27
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IRFB3307ZPBF irfs3307zpbf.pdf
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
Mindestbestellmenge: 26
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