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IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES BFR106E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1402 Stücke:
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209+0.34 EUR
253+0.28 EUR
288+0.25 EUR
338+0.21 EUR
379+0.19 EUR
421+0.17 EUR
472+0.15 EUR
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES IPB031NE7N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4510PBF IRFB4510PBF INFINEON TECHNOLOGIES IRFB4510PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 184 Stücke:
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45+1.62 EUR
57+1.26 EUR
61+1.18 EUR
67+1.07 EUR
73+0.99 EUR
100+0.92 EUR
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IRF5803TRPBF IRF5803TRPBF INFINEON TECHNOLOGIES irf5803pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3811 Stücke:
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125+0.57 EUR
157+0.46 EUR
232+0.31 EUR
268+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
1500+0.16 EUR
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BAS4004E6433HTMA1 INFINEON TECHNOLOGIES INFNS19700-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BSP62H6327XTSA1 INFINEON TECHNOLOGIES bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Current gain: 2k
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BFR92PE6327 BFR92PE6327 INFINEON TECHNOLOGIES BFR92p.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Polarisation: bipolar
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: RF
Case: SOT23
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Frequency: 5GHz
auf Bestellung 3160 Stücke:
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218+0.33 EUR
275+0.26 EUR
315+0.23 EUR
365+0.2 EUR
404+0.18 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218
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IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES IRFB7540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 149 Stücke:
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94+0.77 EUR
106+0.68 EUR
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IRFR540ZTRLPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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IRFR7540TRPBF IRFR7540TRPBF INFINEON TECHNOLOGIES IRFR7540TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFS7540TRLPBF IRFS7540TRLPBF INFINEON TECHNOLOGIES irfs7540pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES auirf7640s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTT62001ENAXUMA1 INFINEON TECHNOLOGIES Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TDSO-8-31
Technology: PROFET™+ 24V
Mounting: SMD
On-state resistance: 0.2Ω
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side
Supply voltage: 8...36V DC
Kind of output: N-Channel
Produkt ist nicht verfügbar
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BTT62001ENAXUMA1 INFINEON TECHNOLOGIES Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES BSC110N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4310PBF IRFB4310PBF INFINEON TECHNOLOGIES irfs4310.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 110 Stücke:
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22+3.39 EUR
40+1.79 EUR
50+1.53 EUR
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AUIRFN8405TR INFINEON TECHNOLOGIES auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 95A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Power dissipation: 166W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-HSOF-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 150A
Produkt ist nicht verfügbar
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BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES BTS5030-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 621 Stücke:
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22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
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IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES irfb4019pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 879 Stücke:
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40+1.79 EUR
52+1.4 EUR
59+1.22 EUR
72+1 EUR
80+0.9 EUR
100+0.87 EUR
500+0.83 EUR
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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES BFP193E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 1603 Stücke:
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193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 810 Stücke:
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35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES irfs4610.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 830 Stücke:
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28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
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IRFB38N20DPBF IRFB38N20DPBF INFINEON TECHNOLOGIES irfs38n20d.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 77 Stücke:
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24+3.1 EUR
29+2.5 EUR
33+2.23 EUR
50+1.73 EUR
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES irfs52n15d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 197 Stücke:
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29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
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IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES irfb5620pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 96 Stücke:
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36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
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IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES irfs3307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1270 Stücke:
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27+2.7 EUR
28+2.56 EUR
30+2.43 EUR
36+2 EUR
42+1.73 EUR
50+1.43 EUR
100+1.26 EUR
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES IRFB7730PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 129 Stücke:
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25+2.87 EUR
34+2.16 EUR
50+1.94 EUR
100+1.79 EUR
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES irfb4332pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 81 Stücke:
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26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 26
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
Mindestbestellmenge: 36
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IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES irfs7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 1059 Stücke:
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38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES irfs3307zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 257 Stücke:
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26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
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IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES irfs4410.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 972 Stücke:
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30+2.45 EUR
36+2.02 EUR
55+1.32 EUR
100+1.04 EUR
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IRFB5615PBF IRFB5615PBF INFINEON TECHNOLOGIES irfb5615pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 242 Stücke:
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38+1.93 EUR
48+1.52 EUR
54+1.33 EUR
64+1.13 EUR
72+1 EUR
100+0.94 EUR
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IPB033N10N5LF IPB033N10N5LF INFINEON TECHNOLOGIES IPB033N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Gate-source voltage: ±20V
Kind of channel: enhancement
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S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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TT285N16KOFHPSA2 INFINEON TECHNOLOGIES Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES IPA60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
36+2.03 EUR
50+1.52 EUR
100+1.33 EUR
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3663 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
332+0.22 EUR
486+0.15 EUR
573+0.12 EUR
807+0.089 EUR
1000+0.077 EUR
3000+0.063 EUR
Mindestbestellmenge: 239
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.1W
auf Bestellung 2607 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
210+0.34 EUR
281+0.25 EUR
317+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 143
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BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
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FZ1000R33HE3BPSA1 INFINEON TECHNOLOGIES FZ1000R33HE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130-3
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 INFINEON TECHNOLOGIES Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Technology: XHP™3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 3.3kV
Case: AG-XHP100-6
Produkt ist nicht verfügbar
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FZ825R33HE4DBPSA1 INFINEON TECHNOLOGIES Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 825A
Pulsed collector current: 1.65kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130
Produkt ist nicht verfügbar
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FZ1400R33HE4BPSA1 INFINEON TECHNOLOGIES Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130-3
Produkt ist nicht verfügbar
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FZ2000R33HE4BOSA1 INFINEON TECHNOLOGIES Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Topology: IGBT x3
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB190-3
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 INFINEON TECHNOLOGIES FD1000R33HE3K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Topology: buck-boost chopper
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 11.5kW
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB190
Produkt ist nicht verfügbar
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IRF1018EPBF IRF1018EPBF INFINEON TECHNOLOGIES irf1018epbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
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22+3.25 EUR
Mindestbestellmenge: 22
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BGA524N6E6327XTSA1 INFINEON TECHNOLOGIES BGA524N6.pdf Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
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BTS70402EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70401EPAXUMA1 INFINEON TECHNOLOGIES BTS70401EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
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BTS70802EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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CY8C28452-24PVXI CY8C28452-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 600µΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
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IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES ICE3BR4765JG.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 2576 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.36 EUR
500+1.34 EUR
Mindestbestellmenge: 42
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BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES BSC340N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
108+0.67 EUR
144+0.5 EUR
250+0.45 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 79
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BTS3800SL BTS3800SL INFINEON TECHNOLOGIES BTS3800SL.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Case: PG-SCT595
Output current: 0.35A
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Kind of output: N-Channel
Turn-on time: 3µs
Turn-off time: 3µs
On-state resistance: 0.8Ω
Technology: HITFET®
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
67+1.08 EUR
80+0.9 EUR
102+0.7 EUR
250+0.6 EUR
500+0.54 EUR
Mindestbestellmenge: 40
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IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BFR106E6327 BFR106E6327-dte.pdf
BFR106E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
253+0.28 EUR
288+0.25 EUR
338+0.21 EUR
379+0.19 EUR
421+0.17 EUR
472+0.15 EUR
Mindestbestellmenge: 209
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IPB031NE7N3GATMA1 IPB031NE7N3G-DTE.pdf
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4510PBF IRFB4510PBF.pdf
IRFB4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
57+1.26 EUR
61+1.18 EUR
67+1.07 EUR
73+0.99 EUR
100+0.92 EUR
Mindestbestellmenge: 45
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IRF5803TRPBF irf5803pbf.pdf
IRF5803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3811 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
157+0.46 EUR
232+0.31 EUR
268+0.27 EUR
500+0.19 EUR
1000+0.17 EUR
1500+0.16 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP62H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 1A; 1.5W; TO261-4
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: TO261-4
Current gain: 2k
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR92PE6327 BFR92p.pdf
BFR92PE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Polarisation: bipolar
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: RF
Case: SOT23
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Frequency: 5GHz
auf Bestellung 3160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
275+0.26 EUR
315+0.23 EUR
365+0.2 EUR
404+0.18 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7540PBF IRFB7540PBF.pdf
IRFB7540PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
94+0.77 EUR
106+0.68 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7540TRPBF IRFR7540TRPBF.pdf
IRFR7540TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7540TRLPBF irfs7540pbf.pdf
IRFS7540TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7640S2TR auirf7640s2.pdf
AUIRF7640S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TDSO-8-31
Technology: PROFET™+ 24V
Mounting: SMD
On-state resistance: 0.2Ω
Number of channels: 1
Output current: 1.5A
Kind of integrated circuit: high-side
Supply voltage: 8...36V DC
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC110N06NS3GATMA1 BSC110N06NS3G-DTE.pdf
BSC110N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310PBF irfs4310.pdf
IRFB4310PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
40+1.79 EUR
50+1.53 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN8405TR auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 95A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Power dissipation: 166W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-HSOF-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5030-1EJA BTS5030-1EJA.pdf
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4019PBF description irfb4019pbf.pdf
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
52+1.4 EUR
59+1.22 EUR
72+1 EUR
80+0.9 EUR
100+0.87 EUR
500+0.83 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BFP193E6327 BFP193E6327-dte.pdf
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 1603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4410ZPBF description irfb4410zpbf.pdf
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4610PBF description irfs4610.pdf
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFB38N20DPBF description irfs38n20d.pdf
IRFB38N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
29+2.5 EUR
33+2.23 EUR
50+1.73 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFB52N15DPBF irfs52n15d.pdf
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRFB5620PBF irfb5620pbf.pdf
IRFB5620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3307PBF irfs3307.pdf
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
28+2.56 EUR
30+2.43 EUR
36+2 EUR
42+1.73 EUR
50+1.43 EUR
100+1.26 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7730PBF IRFB7730PBF.pdf
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
34+2.16 EUR
50+1.94 EUR
100+1.79 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4332PbF irfb4332pbf.pdf
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7537PBF irfs7537pbf.pdf
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3307ZPBF irfs3307zpbf.pdf
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4410PBF description irfs4410.pdf
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
36+2.02 EUR
55+1.32 EUR
100+1.04 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRFB5615PBF irfb5615pbf.pdf
IRFB5615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
48+1.52 EUR
54+1.33 EUR
64+1.13 EUR
72+1 EUR
100+0.94 EUR
Mindestbestellmenge: 38
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IPB033N10N5LF IPB033N10N5LF.pdf
IPB033N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FS064SAGNFB033
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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TT285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 IPA60R190P6-DTE.pdf
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
36+2.03 EUR
50+1.52 EUR
100+1.33 EUR
Mindestbestellmenge: 30
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
332+0.22 EUR
486+0.15 EUR
573+0.12 EUR
807+0.089 EUR
1000+0.077 EUR
3000+0.063 EUR
Mindestbestellmenge: 239
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BAT6202VH6327XTSA1 BAT62E6327HTSA1.pdf
BAT6202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.1W
auf Bestellung 2607 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
210+0.34 EUR
281+0.25 EUR
317+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 143
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BAT62E6327HTSA1 BAT62E6327HTSA1.pdf
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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FZ1000R33HE3BPSA1 FZ1000R33HE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130-3
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Technology: XHP™3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 3.3kV
Case: AG-XHP100-6
Produkt ist nicht verfügbar
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FZ825R33HE4DBPSA1 Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 825A
Pulsed collector current: 1.65kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130
Produkt ist nicht verfügbar
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FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130-3
Produkt ist nicht verfügbar
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FZ2000R33HE4BOSA1 Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Topology: IGBT x3
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB190-3
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 FD1000R33HE3K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Topology: buck-boost chopper
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 11.5kW
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB190
Produkt ist nicht verfügbar
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IRF1018EPBF description irf1018epbf.pdf
IRF1018EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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BGA524N6E6327XTSA1 BGA524N6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
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BTS70402EPAXUMA1 Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70401EPAXUMA1 BTS70401EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70802EPAXUMA1 Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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CY8C28452-24PVXI CY8C28243-24PVXI.pdf
CY8C28452-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 600µΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE3BR4765JGXUMA1 ICE3BR4765JG.pdf
ICE3BR4765JGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 2576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.36 EUR
500+1.34 EUR
Mindestbestellmenge: 42
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BSC340N08NS3GATMA1 BSC340N08NS3G-DTE.pdf
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
108+0.67 EUR
144+0.5 EUR
250+0.45 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 79
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BTS3800SL BTS3800SL.pdf
BTS3800SL
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Case: PG-SCT595
Output current: 0.35A
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Kind of output: N-Channel
Turn-on time: 3µs
Turn-off time: 3µs
On-state resistance: 0.8Ω
Technology: HITFET®
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
67+1.08 EUR
80+0.9 EUR
102+0.7 EUR
250+0.6 EUR
500+0.54 EUR
Mindestbestellmenge: 40
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