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IAUC24N10S5L300ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Power dissipation: 38W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 96A
Drain-source voltage: 100V
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
On-state resistance: 30mΩ
Drain current: 16A
Produkt ist nicht verfügbar
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3694 Stücke:
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186+0.39 EUR
272+0.26 EUR
438+0.16 EUR
536+0.13 EUR
638+0.11 EUR
1000+0.091 EUR
3000+0.062 EUR
Mindestbestellmenge: 186
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2W
Technology: OptiMOS™ P
auf Bestellung 2879 Stücke:
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91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 144 Stücke:
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16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1698 Stücke:
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38+1.92 EUR
43+1.68 EUR
48+1.51 EUR
66+1.1 EUR
100+0.96 EUR
125+0.92 EUR
250+0.81 EUR
500+0.75 EUR
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES irf7319pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES irl3103spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES IRFH7084TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXIT INFINEON TECHNOLOGIES Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512x8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY15B104QSN-108LPXI INFINEON TECHNOLOGIES Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXI INFINEON TECHNOLOGIES Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DZ1070N22K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. load current: 1.1kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N18K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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BCX71KE6327 BCX71KE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
Mindestbestellmenge: 55
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 5885 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
3000+0.032 EUR
Mindestbestellmenge: 600
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BCX71GE6327 BCX71GE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
977+0.073 EUR
1085+0.066 EUR
1226+0.058 EUR
1413+0.051 EUR
Mindestbestellmenge: 977
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BCX71JE6327HTSA1 INFINEON TECHNOLOGIES bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES irf2907zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16
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IMBG65R260M1HXTMA1 INFINEON TECHNOLOGIES Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.63 EUR
Mindestbestellmenge: 1000
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AIMBG120R060M1XTMA1 INFINEON TECHNOLOGIES 448_AIMBG120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 38A; 202W; D2PAK-7
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 38A
Power dissipation: 202W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+7.34 EUR
Mindestbestellmenge: 1000
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AIMBG120R160M1XTMA1 INFINEON TECHNOLOGIES 448_AIMBG120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 17A; 106W; D2PAK-7
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 106W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.63 EUR
Mindestbestellmenge: 1000
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP034NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.42 EUR
18+3.98 EUR
20+3.63 EUR
27+2.69 EUR
Mindestbestellmenge: 17
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SGP15N120XKSA1 INFINEON TECHNOLOGIES SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 198W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 198W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 52A
Mounting: THT
Gate charge: 130nC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.8 EUR
150+4.33 EUR
Mindestbestellmenge: 50
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BSS127IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FM25L16B-GTR FM25L16B-GTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IAUC40N08S5L140ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8
Gate charge: 18.6nC
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 28A
Power dissipation: 56W
Drain-source voltage: 80V
Pulsed drain current: 160A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.89 EUR
25+2.86 EUR
Mindestbestellmenge: 19
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IPD60N10S4L12ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 94W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK; TO252
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPD60N10S412ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60N10S4-12-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c88704c7a018870c994de0a3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 94W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK; TO252
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 INFINEON TECHNOLOGIES BSC060N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 INFINEON TECHNOLOGIES BSC160N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
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BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ160N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUC60N10S5L110ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES IAUT260N10S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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ISC060N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.53 EUR
Mindestbestellmenge: 5000
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Power dissipation: 25.2W
Case: PG-MDIP24
Mounting: THT
Operating temperature: -40...125°C
Output current: -15...15A
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
Frequency: 20kHz
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.22 EUR
8+9.84 EUR
Mindestbestellmenge: 7
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES SMBT3904SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.13 EUR
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CY8CMBR3102-SX1I CY8CMBR3102-SX1I INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
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CY8CMBR3108-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
490+1.22 EUR
Mindestbestellmenge: 490
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IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3410TRLPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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CY15B108QN-40SXI INFINEON TECHNOLOGIES Infineon-CY15B108QN_CY15V108QN_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 8Mb FRAM
Interface: SPI
Memory organisation: 1024kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
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CY15B108QN-40SXIT INFINEON TECHNOLOGIES Infineon-CY15B108QN_CY15V108QN_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 8Mb FRAM
Interface: SPI
Memory organisation: 1024kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IPB055N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc1a741b1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 107W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 94A
Power dissipation: 107W
Case: D2PAK-3
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
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IPP055N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES ICE2QS02G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
61+1.17 EUR
67+1.07 EUR
76+0.94 EUR
77+0.93 EUR
Mindestbestellmenge: 52
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES irlms5703pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES irlms1503pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES irlms1902pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS2002TRPBF IRLMS2002TRPBF INFINEON TECHNOLOGIES irlms2002pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Power dissipation: 38W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 96A
Drain-source voltage: 100V
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
On-state resistance: 30mΩ
Drain current: 16A
Produkt ist nicht verfügbar
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BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3694 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
272+0.26 EUR
438+0.16 EUR
536+0.13 EUR
638+0.11 EUR
1000+0.091 EUR
3000+0.062 EUR
Mindestbestellmenge: 186
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2W
Technology: OptiMOS™ P
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91
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IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
Mindestbestellmenge: 16
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IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1698 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
43+1.68 EUR
48+1.51 EUR
66+1.1 EUR
100+0.96 EUR
125+0.92 EUR
250+0.81 EUR
500+0.75 EUR
Mindestbestellmenge: 38
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IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRF7319TRPBF description irf7319pbf.pdf
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF irl3103spbf.pdf
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF.pdf
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF irfs3206pbf.pdf
IRFS3206TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXIT
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512x8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY15B104QSN-108LPXI Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXI Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DZ1070N22K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. load current: 1.1kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N18K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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BCX71KE6327 BCX71.pdf
BCX71KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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BCX71HE6327 BCX71.pdf
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 5885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
3000+0.032 EUR
Mindestbestellmenge: 600
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BCX71GE6327 BCX71.pdf
BCX71GE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
977+0.073 EUR
1085+0.066 EUR
1226+0.058 EUR
1413+0.051 EUR
Mindestbestellmenge: 977
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BCX71JE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IRF2907ZPBF irf2907zpbf.pdf
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.63 EUR
Mindestbestellmenge: 1000
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AIMBG120R060M1XTMA1 448_AIMBG120R.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 38A; 202W; D2PAK-7
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 38A
Power dissipation: 202W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+7.34 EUR
Mindestbestellmenge: 1000
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AIMBG120R160M1XTMA1 448_AIMBG120R.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 17A; 106W; D2PAK-7
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 106W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.63 EUR
Mindestbestellmenge: 1000
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IPP034NE7N3GXKSA1 IPP034NE7N3G-DTE.pdf
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.42 EUR
18+3.98 EUR
20+3.63 EUR
27+2.69 EUR
Mindestbestellmenge: 17
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SGP15N120XKSA1 SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 198W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 198W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 52A
Mounting: THT
Gate charge: 130nC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.8 EUR
150+4.33 EUR
Mindestbestellmenge: 50
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FM25L16B-GTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8
Gate charge: 18.6nC
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 28A
Power dissipation: 56W
Drain-source voltage: 80V
Pulsed drain current: 160A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.89 EUR
25+2.86 EUR
Mindestbestellmenge: 19
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IPD60N10S4L12ATMA1 Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 94W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK; TO252
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPD60N10S412ATMA1 Infineon-IPD60N10S4-12-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c88704c7a018870c994de0a3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 94W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK; TO252
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSC060N10NS3GATMA1 BSC060N10NS3G-DTE.pdf
BSC060N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC160N10NS3GATMA1 BSC160N10NS3G-DTE.pdf
BSC160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSZ160N10NS3GATMA1 BSZ160N10NS3G-DTE.pdf
BSZ160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUC60N10S5L110ATMA1 Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019.pdf
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.53 EUR
Mindestbestellmenge: 5000
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IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Power dissipation: 25.2W
Case: PG-MDIP24
Mounting: THT
Operating temperature: -40...125°C
Output current: -15...15A
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
Frequency: 20kHz
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.22 EUR
8+9.84 EUR
Mindestbestellmenge: 7
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SMBT3904SH6327XTSA1 SMBT3904SH6327.pdf
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.13 EUR
Mindestbestellmenge: 63
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CY8CMBR3102-SX1I Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3102-SX1I
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+1.22 EUR
Mindestbestellmenge: 490
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IRFR3410TRPBF description irfr3410pbf.pdf
IRFR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3410TRLPBF irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
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CY15B108QN-40SXI Infineon-CY15B108QN_CY15V108QN_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 8Mb FRAM
Interface: SPI
Memory organisation: 1024kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY15B108QN-40SXIT Infineon-CY15B108QN_CY15V108QN_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 8Mb FRAM
Interface: SPI
Memory organisation: 1024kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IPB055N08NF2SATMA1 Infineon-IPB055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc1a741b1e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 107W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 94A
Power dissipation: 107W
Case: D2PAK-3
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP055N08NF2SAKMA1 Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02G.pdf
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
61+1.17 EUR
67+1.07 EUR
76+0.94 EUR
77+0.93 EUR
Mindestbestellmenge: 52
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IRLMS5703TRPBF irlms5703pbf.pdf
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1503TRPBF description irlms1503pbf.pdf
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1902TRPBF irlms1902pbf.pdf
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS2002TRPBF description irlms2002pbf.pdf
IRLMS2002TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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