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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
91+0.79 EUR
Mindestbestellmenge: 68
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DD180N20SHPSA1 INFINEON TECHNOLOGIES DD180N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw
Case: BG-PB34SB-1
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: double series
Max. forward voltage: 1.39V
Type of semiconductor module: diode
Load current: 226A
Max. off-state voltage: 2kV
Max. forward impulse current: 5.75kA
Produkt ist nicht verfügbar
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T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Max. load current: 7kA
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
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TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
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TT160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS50055-1TMB BTS50055-1TMB INFINEON TECHNOLOGIES BTS50055-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES BTS500801TEA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 16mΩ
Number of channels: 1
Supply voltage: 5.5...30V DC
Output current: 10A
Output voltage: 39V
Type of integrated circuit: power switch
auf Bestellung 368 Stücke:
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14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
Mindestbestellmenge: 14
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES BTS50080-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES BTS50080-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.31 EUR
14+5.46 EUR
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SPD07N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA80R460CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.8A; 34W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 64nC
On-state resistance: 390mΩ
Drain current: 10.8A
Drain-source voltage: 800V
Power dissipation: 34W
Case: TO220-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R460CFDAUMA1 IPL65R460CFDAUMA1 INFINEON TECHNOLOGIES IPL65R460CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.46Ω
Drain current: 8.3A
Gate-source voltage: ±20V
Drain-source voltage: 650V
Power dissipation: 83.3W
Case: PG-VSON-4
Technology: CoolMOS™
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES IPP045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 99 Stücke:
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34+2.12 EUR
39+1.86 EUR
50+1.66 EUR
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IPA045N10N3GXKSA1 IPA045N10N3GXKSA1 INFINEON TECHNOLOGIES IPA045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
38+1.9 EUR
50+1.64 EUR
100+1.53 EUR
500+1.5 EUR
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IPI045N10N3GXKSA1 IPI045N10N3GXKSA1 INFINEON TECHNOLOGIES IPI045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES irf7805zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BFP620FH7764XTSA1 INFINEON TECHNOLOGIES Infineon-BFP620F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03a08d3926 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80mA; 185mW; automotive industry
Mounting: SMD
Collector current: 80mA
Power dissipation: 185mW
Current gain: 110
Frequency: 65GHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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BFP620H7764XTSA1 INFINEON TECHNOLOGIES Infineon-BFP620-DataSheet-v03_00-EN.pdf?fileId=5546d462689a790c01690f0396db3924 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80mA; 185mW; SOT343; automotive industry
Mounting: SMD
Case: SOT343
Collector current: 80mA
Power dissipation: 185mW
Current gain: 110
Frequency: 65GHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 52W
Drain current: 15A
Drain-source voltage: 100V
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4754 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
125+0.57 EUR
133+0.54 EUR
250+0.48 EUR
500+0.42 EUR
1000+0.36 EUR
2000+0.32 EUR
4000+0.29 EUR
Mindestbestellmenge: 112
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 INFINEON TECHNOLOGIES BSS215PH6327-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Case: PG-SOT23
auf Bestellung 2584 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
246+0.29 EUR
350+0.2 EUR
410+0.17 EUR
596+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 167
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BCR523E6433HTMA1 BCR523E6433HTMA1 INFINEON TECHNOLOGIES bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 100MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.33W
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
619+0.12 EUR
688+0.1 EUR
814+0.088 EUR
2500+0.083 EUR
Mindestbestellmenge: 65
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BCR533E6327HTSA1 BCR533E6327HTSA1 INFINEON TECHNOLOGIES bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 100MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.33W
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
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BCR135E6327 BCR135E6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
527+0.14 EUR
795+0.09 EUR
812+0.089 EUR
Mindestbestellmenge: 385
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
auf Bestellung 7915 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
906+0.079 EUR
1104+0.065 EUR
1250+0.057 EUR
1367+0.052 EUR
1502+0.048 EUR
3000+0.041 EUR
Mindestbestellmenge: 625
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES BFP405.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 623 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES FP15R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES FP75R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+323.04 EUR
3+292.15 EUR
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Produkt ist nicht verfügbar
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BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES BFP450H6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Kind of transistor: RF
Technology: SIEGET™
Mounting: SMD
Case: SOT343
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Polarisation: bipolar
Frequency: 24GHz
Kind of package: reel; tape
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
Mindestbestellmenge: 414
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES TLE6251-2G.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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IAUC24N10S5L300ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Power dissipation: 38W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 96A
Drain-source voltage: 100V
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
On-state resistance: 30mΩ
Drain current: 16A
Produkt ist nicht verfügbar
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BSL215CH6327XTSA1 BSL215CH6327XTSA1 INFINEON TECHNOLOGIES BSL215CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
On-state resistance: 0.173/0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Case: PG-TSOP-6
auf Bestellung 2117 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
123+0.58 EUR
174+0.41 EUR
182+0.39 EUR
203+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 91
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Case: SOT23
auf Bestellung 1054 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
341+0.21 EUR
561+0.13 EUR
674+0.11 EUR
782+0.092 EUR
1000+0.078 EUR
Mindestbestellmenge: 239
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.7A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 2W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2939 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
163+0.44 EUR
210+0.34 EUR
250+0.3 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 117
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.01 EUR
13+5.66 EUR
16+4.6 EUR
18+3.98 EUR
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
Mindestbestellmenge: 16
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
59+1.22 EUR
67+1.08 EUR
73+0.98 EUR
100+0.89 EUR
125+0.87 EUR
500+0.75 EUR
Mindestbestellmenge: 46
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES irf7319pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES irl3103spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES IRFH7084TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXIT INFINEON TECHNOLOGIES Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512x8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY15B104QSN-108LPXI INFINEON TECHNOLOGIES Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXI INFINEON TECHNOLOGIES Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DZ1070N22K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. load current: 1.1kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N18K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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BCX71KE6327 BCX71KE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
Mindestbestellmenge: 55
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 5885 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
3000+0.032 EUR
Mindestbestellmenge: 600
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BCX71GE6327 BCX71GE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
977+0.073 EUR
1085+0.066 EUR
1226+0.058 EUR
1413+0.051 EUR
Mindestbestellmenge: 977
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BCX71JE6327HTSA1 INFINEON TECHNOLOGIES bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES irf2907zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Power dissipation: 330W
Drain-source voltage: 75V
Drain current: 170A
Kind of package: tube
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16
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IRFU5305PBF description irfr5305pbf.pdf
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
91+0.79 EUR
Mindestbestellmenge: 68
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DD180N20SHPSA1 DD180N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw
Case: BG-PB34SB-1
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: double series
Max. forward voltage: 1.39V
Type of semiconductor module: diode
Load current: 226A
Max. off-state voltage: 2kV
Max. forward impulse current: 5.75kA
Produkt ist nicht verfügbar
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T3160N18TOFVTXPSA1 T3160N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Max. load current: 7kA
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
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TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
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TT160N18SOF TT160N18SOF_TD160N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS50055-1TMB BTS50055-1TMB.pdf
BTS50055-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS500801TEA.pdf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 16mΩ
Number of channels: 1
Supply voltage: 5.5...30V DC
Output current: 10A
Output voltage: 39V
Type of integrated circuit: power switch
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
Mindestbestellmenge: 14
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BTS50080-1TMA BTS50080-1TMA.pdf
BTS50080-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
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BTS50080-1TMB BTS50080-1TMB.pdf
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.31 EUR
14+5.46 EUR
Mindestbestellmenge: 10
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA80R460CEXKSA2 Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.8A; 34W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 64nC
On-state resistance: 390mΩ
Drain current: 10.8A
Drain-source voltage: 800V
Power dissipation: 34W
Case: TO220-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R460CFDAUMA1 IPL65R460CFD-DTE.pdf
IPL65R460CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.46Ω
Drain current: 8.3A
Gate-source voltage: ±20V
Drain-source voltage: 650V
Power dissipation: 83.3W
Case: PG-VSON-4
Technology: CoolMOS™
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD340N20SHPSA1 DD340N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3G-DTE.pdf
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
39+1.86 EUR
50+1.66 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IPA045N10N3GXKSA1 IPA045N10N3G-DTE.pdf
IPA045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
38+1.9 EUR
50+1.64 EUR
100+1.53 EUR
500+1.5 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IPI045N10N3GXKSA1 IPI045N10N3G-DTE.pdf
IPI045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7805ZTRPBF irf7805zpbf.pdf
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP620FH7764XTSA1 Infineon-BFP620F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03a08d3926
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80mA; 185mW; automotive industry
Mounting: SMD
Collector current: 80mA
Power dissipation: 185mW
Current gain: 110
Frequency: 65GHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP620H7764XTSA1 Infineon-BFP620-DataSheet-v03_00-EN.pdf?fileId=5546d462689a790c01690f0396db3924
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80mA; 185mW; SOT343; automotive industry
Mounting: SMD
Case: SOT343
Collector current: 80mA
Power dissipation: 185mW
Current gain: 110
Frequency: 65GHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 52W
Drain current: 15A
Drain-source voltage: 100V
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
125+0.57 EUR
133+0.54 EUR
250+0.48 EUR
500+0.42 EUR
1000+0.36 EUR
2000+0.32 EUR
4000+0.29 EUR
Mindestbestellmenge: 112
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BSS215PH6327XTSA1 BSS215PH6327-DTE.pdf
BSS215PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Case: PG-SOT23
auf Bestellung 2584 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
246+0.29 EUR
350+0.2 EUR
410+0.17 EUR
596+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 167
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BCR523E6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523E6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 100MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.33W
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
619+0.12 EUR
688+0.1 EUR
814+0.088 EUR
2500+0.083 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BCR533E6327HTSA1 bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a
BCR533E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 100MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.33W
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BCR135E6327 bcr135.pdf
BCR135E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
527+0.14 EUR
795+0.09 EUR
812+0.089 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BCR185E6327 BCR185.pdf
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
auf Bestellung 7915 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
906+0.079 EUR
1104+0.065 EUR
1250+0.057 EUR
1367+0.052 EUR
1502+0.048 EUR
3000+0.041 EUR
Mindestbestellmenge: 625
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BFP405H6327XTSA1 BFP405.pdf
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 623 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62
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FP15R12W1T4_B3 FP15R12W1T4B3.pdf
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2
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FP75R12KT4 FP75R12KT4.pdf
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+323.04 EUR
3+292.15 EUR
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BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327 BFP450H6327-dte.pdf
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Kind of transistor: RF
Technology: SIEGET™
Mounting: SMD
Case: SOT343
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Polarisation: bipolar
Frequency: 24GHz
Kind of package: reel; tape
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR135SH6327 bcr135.pdf
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
Mindestbestellmenge: 414
Im Einkaufswagen  Stück im Wert von  UAH
BCR135WH6327 bcr135.pdf
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6251-2G TLE6251-2G.pdf
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Power dissipation: 38W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 96A
Drain-source voltage: 100V
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
On-state resistance: 30mΩ
Drain current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL215CH6327XTSA1 BSL215CH6327XTSA1.pdf
BSL215CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
On-state resistance: 0.173/0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Case: PG-TSOP-6
auf Bestellung 2117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
123+0.58 EUR
174+0.41 EUR
182+0.39 EUR
203+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 91
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BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Case: SOT23
auf Bestellung 1054 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
341+0.21 EUR
561+0.13 EUR
674+0.11 EUR
782+0.092 EUR
1000+0.078 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.7A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 2W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
163+0.44 EUR
210+0.34 EUR
250+0.3 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.01 EUR
13+5.66 EUR
16+4.6 EUR
18+3.98 EUR
Mindestbestellmenge: 12
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IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
Mindestbestellmenge: 16
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IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
59+1.22 EUR
67+1.08 EUR
73+0.98 EUR
100+0.89 EUR
125+0.87 EUR
500+0.75 EUR
Mindestbestellmenge: 46
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IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRF7319TRPBF description irf7319pbf.pdf
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF irl3103spbf.pdf
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF.pdf
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF irfs3206pbf.pdf
IRFS3206TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXIT
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512x8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY15B104QSN-108LPXI Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY15V104QSN-108LPXI Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 108MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 1.71...1.89V DC
Clock frequency: 108MHz
Case: GQFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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DZ1070N22K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. load current: 1.1kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N18K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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BCX71KE6327 BCX71.pdf
BCX71KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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BCX71HE6327 BCX71.pdf
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 5885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
3000+0.032 EUR
Mindestbestellmenge: 600
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BCX71GE6327 BCX71.pdf
BCX71GE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
977+0.073 EUR
1085+0.066 EUR
1226+0.058 EUR
1413+0.051 EUR
Mindestbestellmenge: 977
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BCX71JE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IRF2907ZPBF irf2907zpbf.pdf
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Power dissipation: 330W
Drain-source voltage: 75V
Drain current: 170A
Kind of package: tube
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16
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