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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7532 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
506+0.14 EUR
767+0.093 EUR
903+0.079 EUR
1137+0.063 EUR
3000+0.054 EUR
Mindestbestellmenge: 358
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 248 Stücke:
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248+0.29 EUR
Mindestbestellmenge: 248
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BC850BWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC850CWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IRGP4062DPBF IRGP4062DPBF INFINEON TECHNOLOGIES irgb4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pvt412.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
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12+6.48 EUR
15+5 EUR
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PVT412PBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 500 Stücke:
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50+4.9 EUR
150+4.42 EUR
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Manufacturer series: PV
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Control voltage: 1.2V DC
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 3859 Stücke:
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50+6.39 EUR
100+5.75 EUR
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PVT322PBF PVT322PBF INFINEON TECHNOLOGIES pvt322.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES irfi540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 210 Stücke:
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34+2.12 EUR
77+0.93 EUR
84+0.86 EUR
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S29AL008J70TFI020 S29AL008J70TFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
auf Bestellung 514 Stücke:
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21+3.49 EUR
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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CYBLE-012011-00 INFINEON TECHNOLOGIES Infineon-CYBLE-012011-00_EZ-BLE_Creator_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5988a552b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: BLE; 3dBm; I2C,SPI,UART
Type of communications module: Bluetooth Low Energy
Transmitter output power: 3dBm
Receiver sensitivity: -91dBm
Mounting: SMD
Bluetooth version: BLE
Frequency: 2.4GHz
Kind of module: wireless
Interface: I2C; SPI; UART
Dimensions: 14.52x19.2x2mm
Supply voltage: 1.8...4.5V DC
Produkt ist nicht verfügbar
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CYBLE-212020-01 INFINEON TECHNOLOGIES Infineon-CYBLE-212020-01-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d41a67e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Type of communications module: Bluetooth Low Energy
Transmitter output power: 3dBm
Receiver sensitivity: -91dBm
Mounting: SMD
Bluetooth version: 4.2; BLE
Frequency: 2.4GHz
Kind of module: wireless
Interface: I2C; I2S; SPI; UART
Dimensions: 19.2x14.5mm
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
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CYBLE-222014-01 INFINEON TECHNOLOGIES Infineon-CYBLE-222014-01-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edac5815d5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Type of communications module: Bluetooth Low Energy
Transmitter output power: 3dBm
Receiver sensitivity: -91dBm
Mounting: SMD
Bluetooth version: 4.2; BLE
Frequency: 2.4GHz
Kind of module: wireless
Interface: I2C; SPI; UART
Dimensions: 10x10mm
Supply voltage: 1.8...4.5V DC
Produkt ist nicht verfügbar
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CYW20835PB1KML1GGF INFINEON TECHNOLOGIES Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 12dBm; SMD; 2Mbps; 2400MHz
Type of communications module: Bluetooth Low Energy
Transmitter output power: 12dBm
Receiver sensitivity: -94.5dBm
Mounting: SMD
Data transfer rate: 2Mbps
Band: 2.4GHz
Operating temperature: -30...85°C
auf Bestellung 2600 Stücke:
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2600+2.52 EUR
Mindestbestellmenge: 2600
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CYBLE-333074-02 INFINEON TECHNOLOGIES Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d9a4f3ee63c2d Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 12dBm; I2C; SMD; 6Mbps; 2400MHz
Type of communications module: Bluetooth Low Energy
Transmitter output power: 12dBm
Receiver sensitivity: -94.5dBm
Mounting: SMD
Data transfer rate: 6Mbps
Band: 2.4GHz
Operating temperature: -30...85°C
Communications modules features: antenna
Interface: I2C
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+6.55 EUR
Mindestbestellmenge: 500
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CY3210-MINIPROG1 INFINEON TECHNOLOGIES Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Interface: USB
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Software: included
Type of development kit: Cypress
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Communictions protocol: DALI
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
auf Bestellung 167 Stücke:
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49+1.47 EUR
52+1.4 EUR
55+1.32 EUR
100+1.19 EUR
Mindestbestellmenge: 49
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CY8C5267AXI-LP051 CY8C5267AXI-LP051 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
auf Bestellung 90 Stücke:
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6+14.27 EUR
10+14.23 EUR
Mindestbestellmenge: 6
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IRF7343TRPBF IRF7343TRPBF INFINEON TECHNOLOGIES irf7343pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 7895 Stücke:
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45+1.6 EUR
71+1.02 EUR
105+0.68 EUR
250+0.59 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
4000+0.42 EUR
Mindestbestellmenge: 45
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IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES IRS20957S.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: SO16
Supply voltage: 10...15V DC
Kind of package: reel; tape
auf Bestellung 757 Stücke:
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26+2.83 EUR
28+2.65 EUR
Mindestbestellmenge: 26
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IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES irf7316pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1629 Stücke:
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46+1.57 EUR
67+1.08 EUR
92+0.78 EUR
105+0.69 EUR
200+0.61 EUR
250+0.59 EUR
500+0.53 EUR
1000+0.49 EUR
Mindestbestellmenge: 46
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES BSS83PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
On-state resistance: 2Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
auf Bestellung 213 Stücke:
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157+0.46 EUR
213+0.33 EUR
Mindestbestellmenge: 157
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IRL6372TRPBF IRL6372TRPBF INFINEON TECHNOLOGIES irl6372pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Technology: HEXFET®
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Features of semiconductor devices: logic level
Kind of package: reel; tape
auf Bestellung 1833 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
112+0.64 EUR
125+0.57 EUR
154+0.46 EUR
174+0.41 EUR
Mindestbestellmenge: 100
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CY7C1021DV33-10ZSXI CY7C1021DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3...3.6V
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Access time: 10ns
auf Bestellung 1056 Stücke:
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34+2.13 EUR
35+2.1 EUR
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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 173 Stücke:
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34+2.16 EUR
38+1.89 EUR
41+1.76 EUR
43+1.67 EUR
50+1.62 EUR
Mindestbestellmenge: 34
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IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 71 Stücke:
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23+3.19 EUR
25+2.9 EUR
29+2.52 EUR
31+2.37 EUR
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IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 64 Stücke:
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35+2.07 EUR
37+1.94 EUR
Mindestbestellmenge: 35
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IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.56 EUR
23+3.15 EUR
25+2.87 EUR
29+2.52 EUR
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IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2225 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
136+0.53 EUR
198+0.36 EUR
250+0.32 EUR
500+0.28 EUR
1000+0.27 EUR
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IPI65R600C6XKSA1 IPI65R600C6XKSA1 INFINEON TECHNOLOGIES IPI65R600C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 INFINEON TECHNOLOGIES IPD65R600C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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CY8C4247AXI-M485 CY8C4247AXI-M485 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 16kBSRAM,128kBFLASH
Mounting: SMD
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Case: TQFP64
Produkt ist nicht verfügbar
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
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IRFR2905ZTRPBF IRFR2905ZTRPBF INFINEON TECHNOLOGIES IRFx2905ZPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
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AUIRFR2905ZTRL INFINEON TECHNOLOGIES auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BAS3010S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 1A
Max. forward impulse current: 4A
Max. off-state voltage: 30V
Max. forward voltage: 0.65V
Leakage current: 0.3mA
auf Bestellung 15000 Stücke:
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15000+0.15 EUR
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IRFB4127PBF IRFB4127PBF INFINEON TECHNOLOGIES irfb4127pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1116 Stücke:
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31+2.36 EUR
33+2.2 EUR
42+1.73 EUR
46+1.57 EUR
53+1.36 EUR
Mindestbestellmenge: 31
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IRF7324TRPBF IRF7324TRPBF INFINEON TECHNOLOGIES irf7324pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES irf9358pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF9393TRPBF IRF9393TRPBF INFINEON TECHNOLOGIES irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 279 Stücke:
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207+0.35 EUR
242+0.3 EUR
266+0.27 EUR
279+0.26 EUR
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IRF9321TRPBF IRF9321TRPBF INFINEON TECHNOLOGIES irf9321pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES irf9335pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9321TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf9321-datasheet-en.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAV199E6327HTSA1 BAV199E6327HTSA1 INFINEON TECHNOLOGIES BAV199E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
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FM24CL04B-GTR FM24CL04B-GTR INFINEON TECHNOLOGIES Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES BFP760.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 4 Stücke:
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4+17.88 EUR
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BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Case: PG-SOT23-6
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Output current: 10mA
Number of channels: 1
Operating voltage: 8...60V DC
auf Bestellung 1446 Stücke:
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122+0.59 EUR
160+0.45 EUR
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IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES irfb4227pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
auf Bestellung 1029 Stücke:
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29+2.53 EUR
36+2 EUR
44+1.63 EUR
52+1.39 EUR
100+1.19 EUR
250+1.02 EUR
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IRFB4227PBFXKMA1 IRFB4227PBFXKMA1 INFINEON TECHNOLOGIES irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
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29+2.53 EUR
42+1.7 EUR
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SPP15N60CFDXKSA1 INFINEON TECHNOLOGIES SPP15N60CFD_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e8cee49eb Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: 20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 84nC
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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50+2.69 EUR
200+2.42 EUR
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES irf7424pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Kind of channel: enhancement
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TT142N14KOF TT142N14KOF INFINEON TECHNOLOGIES TT142N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
auf Bestellung 1000 Stücke:
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28+2.63 EUR
31+2.35 EUR
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ITS6035SEPKXUMA1 INFINEON TECHNOLOGIES Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+2.8 EUR
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ITS4035SEPDXUMA1 INFINEON TECHNOLOGIES Infineon-ITS4035S-EP-D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bd900d8c44e83 Category: Power switches - integrated circuits
Description: IC: power switch; 13.2A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Output current: 13.2A
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 27mΩ
Active logical level: high
Operating temperature: -40...150°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.94 EUR
Mindestbestellmenge: 3000
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BC850BE6327 BC850BE6327.pdf
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7532 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
506+0.14 EUR
767+0.093 EUR
903+0.079 EUR
1137+0.063 EUR
3000+0.054 EUR
Mindestbestellmenge: 358
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BC850CE6327 BC850BE6327.pdf
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
248+0.29 EUR
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BC850BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IRGP4062DPBF irgb4062dpbf.pdf
IRGP4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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PVT412LSPBF pvt412.pdf
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.48 EUR
15+5 EUR
Mindestbestellmenge: 12
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PVT412PBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.9 EUR
150+4.42 EUR
Mindestbestellmenge: 50
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Manufacturer series: PV
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Control voltage: 1.2V DC
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 3859 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.39 EUR
100+5.75 EUR
Mindestbestellmenge: 50
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PVT322PBF pvt322.pdf
PVT322PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRFI540NPBF irfi540n.pdf
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
77+0.93 EUR
84+0.86 EUR
Mindestbestellmenge: 34
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S29AL008J70TFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
Mindestbestellmenge: 21
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IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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CYBLE-012011-00 Infineon-CYBLE-012011-00_EZ-BLE_Creator_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5988a552b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: BLE; 3dBm; I2C,SPI,UART
Type of communications module: Bluetooth Low Energy
Transmitter output power: 3dBm
Receiver sensitivity: -91dBm
Mounting: SMD
Bluetooth version: BLE
Frequency: 2.4GHz
Kind of module: wireless
Interface: I2C; SPI; UART
Dimensions: 14.52x19.2x2mm
Supply voltage: 1.8...4.5V DC
Produkt ist nicht verfügbar
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CYBLE-212020-01 Infineon-CYBLE-212020-01-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d41a67e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Type of communications module: Bluetooth Low Energy
Transmitter output power: 3dBm
Receiver sensitivity: -91dBm
Mounting: SMD
Bluetooth version: 4.2; BLE
Frequency: 2.4GHz
Kind of module: wireless
Interface: I2C; I2S; SPI; UART
Dimensions: 19.2x14.5mm
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
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CYBLE-222014-01 Infineon-CYBLE-222014-01-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edac5815d5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; Bluetooth: 4.2,BLE; 3dBm; SMD
Type of communications module: Bluetooth Low Energy
Transmitter output power: 3dBm
Receiver sensitivity: -91dBm
Mounting: SMD
Bluetooth version: 4.2; BLE
Frequency: 2.4GHz
Kind of module: wireless
Interface: I2C; SPI; UART
Dimensions: 10x10mm
Supply voltage: 1.8...4.5V DC
Produkt ist nicht verfügbar
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CYW20835PB1KML1GGF
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 12dBm; SMD; 2Mbps; 2400MHz
Type of communications module: Bluetooth Low Energy
Transmitter output power: 12dBm
Receiver sensitivity: -94.5dBm
Mounting: SMD
Data transfer rate: 2Mbps
Band: 2.4GHz
Operating temperature: -30...85°C
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2600+2.52 EUR
Mindestbestellmenge: 2600
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CYBLE-333074-02 Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d9a4f3ee63c2d
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 12dBm; I2C; SMD; 6Mbps; 2400MHz
Type of communications module: Bluetooth Low Energy
Transmitter output power: 12dBm
Receiver sensitivity: -94.5dBm
Mounting: SMD
Data transfer rate: 6Mbps
Band: 2.4GHz
Operating temperature: -30...85°C
Communications modules features: antenna
Interface: I2C
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+6.55 EUR
Mindestbestellmenge: 500
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CY3210-MINIPROG1 Infineon-MiniProg_Guide_e-Book-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eedc3cb7b94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Interface: USB
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Software: included
Type of development kit: Cypress
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Communictions protocol: DALI
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
52+1.4 EUR
55+1.32 EUR
100+1.19 EUR
Mindestbestellmenge: 49
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CY8C5267AXI-LP051 download
CY8C5267AXI-LP051
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.27 EUR
10+14.23 EUR
Mindestbestellmenge: 6
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IRF7343TRPBF description irf7343pbf.pdf
IRF7343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 7895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
71+1.02 EUR
105+0.68 EUR
250+0.59 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
4000+0.42 EUR
Mindestbestellmenge: 45
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IRS20957STRPBF IRS20957S.pdf
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: SO16
Supply voltage: 10...15V DC
Kind of package: reel; tape
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
28+2.65 EUR
Mindestbestellmenge: 26
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IRF7316TRPBF description irf7316pbf.pdf
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
67+1.08 EUR
92+0.78 EUR
105+0.69 EUR
200+0.61 EUR
250+0.59 EUR
500+0.53 EUR
1000+0.49 EUR
Mindestbestellmenge: 46
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BSS83PH6327XTSA1 BSS83PH6327XTSA1-dte.pdf
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
On-state resistance: 2Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
213+0.33 EUR
Mindestbestellmenge: 157
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IRL6372TRPBF irl6372pbf.pdf
IRL6372TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Technology: HEXFET®
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Features of semiconductor devices: logic level
Kind of package: reel; tape
auf Bestellung 1833 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
112+0.64 EUR
125+0.57 EUR
154+0.46 EUR
174+0.41 EUR
Mindestbestellmenge: 100
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CY7C1021DV33-10ZSXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021DV33-10ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3...3.6V
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Access time: 10ns
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
35+2.1 EUR
Mindestbestellmenge: 34
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IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
38+1.89 EUR
41+1.76 EUR
43+1.67 EUR
50+1.62 EUR
Mindestbestellmenge: 34
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IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
25+2.9 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 23
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IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
37+1.94 EUR
Mindestbestellmenge: 35
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IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Turn-off time: 150ns
Supply voltage: 9...20V DC
Output current: -420...200mA
Kind of package: tube
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
23+3.15 EUR
25+2.87 EUR
29+2.52 EUR
Mindestbestellmenge: 21
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IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
136+0.53 EUR
198+0.36 EUR
250+0.32 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 105
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IPI65R600C6XKSA1 IPI65R600C6-DTE.pdf
IPI65R600C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R600C6BTMA1 IPD65R600C6-DTE.pdf
IPD65R600C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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CY8C4247AXI-M485 CY8C4245AZI-M443.pdf
CY8C4247AXI-M485
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 16kBSRAM,128kBFLASH
Mounting: SMD
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Case: TQFP64
Produkt ist nicht verfügbar
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IR2128SPBF IR21271SPBF.pdf
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
35+2.07 EUR
Mindestbestellmenge: 34
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IRFR2905ZTRPBF IRFx2905ZPBF.pdf
IRFR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR2905ZTRL auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BAS3010S02LRHE6327XTSA1 bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 1A
Max. forward impulse current: 4A
Max. off-state voltage: 30V
Max. forward voltage: 0.65V
Leakage current: 0.3mA
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.15 EUR
Mindestbestellmenge: 15000
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IRFB4127PBF irfb4127pbf.pdf
IRFB4127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
33+2.2 EUR
42+1.73 EUR
46+1.57 EUR
53+1.36 EUR
Mindestbestellmenge: 31
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IRF7324TRPBF irf7324pbf.pdf
IRF7324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9358TRPBF irf9358pbf.pdf
IRF9358TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
207+0.35 EUR
242+0.3 EUR
266+0.27 EUR
279+0.26 EUR
Mindestbestellmenge: 207
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IRF9321TRPBF irf9321pbf.pdf
IRF9321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9335TRPBF irf9335pbf.pdf
IRF9335TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9321TRPBFXTMA1 infineon-irf9321-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAV199E6327HTSA1 BAV199E6327.pdf
BAV199E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Produkt ist nicht verfügbar
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FM24CL04B-GTR Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL04B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BFP760H6327XTSA1 BFP760.pdf
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Case: PG-SOT23-6
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Output current: 10mA
Number of channels: 1
Operating voltage: 8...60V DC
auf Bestellung 1446 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
160+0.45 EUR
Mindestbestellmenge: 122
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IRFB4227PBF irfb4227pbf.pdf
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Gate charge: 70nC
Power dissipation: 190W
Technology: HEXFET®
auf Bestellung 1029 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
36+2 EUR
44+1.63 EUR
52+1.39 EUR
100+1.19 EUR
250+1.02 EUR
Mindestbestellmenge: 29
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IRFB4227PBFXKMA1 irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
42+1.7 EUR
Mindestbestellmenge: 29
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SPP15N60CFDXKSA1 SPP15N60CFD_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e8cee49eb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 13.4A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: 20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 84nC
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.69 EUR
200+2.42 EUR
Mindestbestellmenge: 50
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IRF7424TRPBF irf7424pbf.pdf
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TT142N14KOF TT142N14KOF.pdf
TT142N14KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01G.pdf
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
31+2.35 EUR
Mindestbestellmenge: 28
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ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 13A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 35mΩ
Output current: 13A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+2.8 EUR
Mindestbestellmenge: 3000
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ITS4035SEPDXUMA1 Infineon-ITS4035S-EP-D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bd900d8c44e83
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 13.2A; N-Channel; SMD; PG-TSDSO-14; -40÷150°C
Type of integrated circuit: power switch
Output current: 13.2A
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 27mΩ
Active logical level: high
Operating temperature: -40...150°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.94 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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